JP2837178B2 - Coating method - Google Patents
Coating methodInfo
- Publication number
- JP2837178B2 JP2837178B2 JP1139163A JP13916389A JP2837178B2 JP 2837178 B2 JP2837178 B2 JP 2837178B2 JP 1139163 A JP1139163 A JP 1139163A JP 13916389 A JP13916389 A JP 13916389A JP 2837178 B2 JP2837178 B2 JP 2837178B2
- Authority
- JP
- Japan
- Prior art keywords
- polyamic acid
- water
- dianhydride
- weight
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000576 coating method Methods 0.000 title claims description 15
- 229920005575 poly(amic acid) Polymers 0.000 claims description 46
- 239000011347 resin Substances 0.000 claims description 41
- 229920005989 resin Polymers 0.000 claims description 41
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 25
- 238000001962 electrophoresis Methods 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 23
- 239000003960 organic solvent Substances 0.000 claims description 20
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 11
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 10
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011259 mixed solution Substances 0.000 claims description 8
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 claims description 4
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 16
- 239000007864 aqueous solution Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000007787 solid Substances 0.000 description 9
- 238000001035 drying Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000007665 sagging Methods 0.000 description 6
- 238000007654 immersion Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 4
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 229960002887 deanol Drugs 0.000 description 4
- 150000004985 diamines Chemical class 0.000 description 4
- 239000012972 dimethylethanolamine Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 230000001376 precipitating effect Effects 0.000 description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 2
- NYRFBMFAUFUULG-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=C(N)C=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=CC(N)=C1 NYRFBMFAUFUULG-UHFFFAOYSA-N 0.000 description 2
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- TUQQUUXMCKXGDI-UHFFFAOYSA-N bis(3-aminophenyl)methanone Chemical compound NC1=CC=CC(C(=O)C=2C=C(N)C=CC=2)=C1 TUQQUUXMCKXGDI-UHFFFAOYSA-N 0.000 description 2
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 238000007603 infrared drying Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 description 2
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 description 2
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 1
- YJUUZFWMKJBVFJ-UHFFFAOYSA-N 1,3-dimethylimidazolidin-4-one Chemical compound CN1CN(C)C(=O)C1 YJUUZFWMKJBVFJ-UHFFFAOYSA-N 0.000 description 1
- VDFVNEFVBPFDSB-UHFFFAOYSA-N 1,3-dioxane Chemical compound C1COCOC1 VDFVNEFVBPFDSB-UHFFFAOYSA-N 0.000 description 1
- NCXUNZWLEYGQAH-UHFFFAOYSA-N 1-(dimethylamino)propan-2-ol Chemical compound CC(O)CN(C)C NCXUNZWLEYGQAH-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- QALSEIBHJDDTQA-UHFFFAOYSA-N 2-methoxy-2-methylpropanamide Chemical compound COC(C)(C)C(N)=O QALSEIBHJDDTQA-UHFFFAOYSA-N 0.000 description 1
- DZLUPKIRNOCKJB-UHFFFAOYSA-N 2-methoxy-n,n-dimethylacetamide Chemical compound COCC(=O)N(C)C DZLUPKIRNOCKJB-UHFFFAOYSA-N 0.000 description 1
- GWHLJVMSZRKEAQ-UHFFFAOYSA-N 3-(2,3-dicarboxyphenyl)phthalic acid Chemical compound OC(=O)C1=CC=CC(C=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O GWHLJVMSZRKEAQ-UHFFFAOYSA-N 0.000 description 1
- TYKLCAKICHXQNE-UHFFFAOYSA-N 3-[(2,3-dicarboxyphenyl)methyl]phthalic acid Chemical compound OC(=O)C1=CC=CC(CC=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O TYKLCAKICHXQNE-UHFFFAOYSA-N 0.000 description 1
- UCFMKTNJZCYBBJ-UHFFFAOYSA-N 3-[1-(2,3-dicarboxyphenyl)ethyl]phthalic acid Chemical compound C=1C=CC(C(O)=O)=C(C(O)=O)C=1C(C)C1=CC=CC(C(O)=O)=C1C(O)=O UCFMKTNJZCYBBJ-UHFFFAOYSA-N 0.000 description 1
- PAHZZOIHRHCHTH-UHFFFAOYSA-N 3-[2-(2,3-dicarboxyphenyl)propan-2-yl]phthalic acid Chemical compound C=1C=CC(C(O)=O)=C(C(O)=O)C=1C(C)(C)C1=CC=CC(C(O)=O)=C1C(O)=O PAHZZOIHRHCHTH-UHFFFAOYSA-N 0.000 description 1
- MFTFTIALAXXIMU-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)C(C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MFTFTIALAXXIMU-UHFFFAOYSA-N 0.000 description 1
- UCQABCHSIIXVOY-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]phenoxy]aniline Chemical group NC1=CC=CC(OC=2C=CC(=CC=2)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 UCQABCHSIIXVOY-UHFFFAOYSA-N 0.000 description 1
- JERFEOKUSPGKGV-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfanylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(SC=3C=CC(OC=4C=C(N)C=CC=4)=CC=3)=CC=2)=C1 JERFEOKUSPGKGV-UHFFFAOYSA-N 0.000 description 1
- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 description 1
- AVCOFPOLGHKJQB-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)sulfonylphthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1S(=O)(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 AVCOFPOLGHKJQB-UHFFFAOYSA-N 0.000 description 1
- IWXCYYWDGDDPAC-UHFFFAOYSA-N 4-[(3,4-dicarboxyphenyl)methyl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1CC1=CC=C(C(O)=O)C(C(O)=O)=C1 IWXCYYWDGDDPAC-UHFFFAOYSA-N 0.000 description 1
- GEYAGBVEAJGCFB-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)propan-2-yl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1C(C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 GEYAGBVEAJGCFB-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZWXPDGCFMMFNRW-UHFFFAOYSA-N N-methylcaprolactam Chemical compound CN1CCCCCC1=O ZWXPDGCFMMFNRW-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- MRSWDOKCESOYBI-UHFFFAOYSA-N anthracene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C=C(C(C(=O)O)=C3)C(O)=O)C3=CC2=C1 MRSWDOKCESOYBI-UHFFFAOYSA-N 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- GCAIEATUVJFSMC-UHFFFAOYSA-N benzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1C(O)=O GCAIEATUVJFSMC-UHFFFAOYSA-N 0.000 description 1
- BBRLKRNNIMVXOD-UHFFFAOYSA-N bis[4-(3-aminophenoxy)phenyl]methanone Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)C(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 BBRLKRNNIMVXOD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- STZIXLPVKZUAMV-UHFFFAOYSA-N cyclopentane-1,1,2,2-tetracarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCCC1(C(O)=O)C(O)=O STZIXLPVKZUAMV-UHFFFAOYSA-N 0.000 description 1
- 125000005265 dialkylamine group Chemical group 0.000 description 1
- 125000006159 dianhydride group Chemical group 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- GBASTSRAHRGUAB-UHFFFAOYSA-N ethylenetetracarboxylic dianhydride Chemical compound O=C1OC(=O)C2=C1C(=O)OC2=O GBASTSRAHRGUAB-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 235000011118 potassium hydroxide Nutrition 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 238000005063 solubilization Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 235000020354 squash Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- -1 tertiary amine acids Chemical class 0.000 description 1
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Paints Or Removers (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ピンホール等のない耐熱性の被膜を金属等
の基材上に形成する方法に関するものであり、特に電気
絶縁分野及び耐熱性を必要とする防蝕用途分野に有用で
ある。Description: FIELD OF THE INVENTION The present invention relates to a method for forming a heat-resistant film having no pinholes on a base material such as a metal, and more particularly to a field of electric insulation and heat resistance. It is useful in the field of anticorrosion applications requiring
従来より、耐熱性を有する被膜を複雑な形状を有する
基材上に形成する技術として、特公昭48−16331、特開
昭49−52252に開示されるように、ポリアミド酸樹脂を
電気泳動法によって基材上に析出せしめ、加熱によって
イミド化を行いポリイミド樹脂被膜を形成する方法が提
案されている。しかしながらポリアミド酸樹脂の電気泳
動塗装においては、電極となる基材表面での水の電気分
解によるガスの発生等に起因するピンホールを修復する
ことが困難で、絶縁性及び防蝕の信頼性に難点があり実
用化に至っていない現状にある。Conventionally, as a technique for forming a heat-resistant film on a substrate having a complicated shape, as disclosed in JP-B-48-16331 and JP-A-49-52252, a polyamic acid resin is electrophoretically treated. A method has been proposed in which a polyimide resin film is formed by precipitating on a substrate and imidizing by heating to form a polyimide resin film. However, in the electrophoretic coating of a polyamic acid resin, it is difficult to repair pinholes caused by gas generation due to electrolysis of water on the surface of the substrate serving as an electrode, and there are difficulties in reliability of insulation and corrosion resistance. And it has not yet been put to practical use.
これらの欠点を解決する方法として、例えば特開昭52
−51436号に記載されている如き非水溶媒中での電気泳
動法が提案されているが、引火等の危険性から実用的で
ない。又、特公昭48−8457に開示される如く、定着後有
機溶媒浸漬を行う方法が提案されているが、この方法に
おいては、ピンホールは低減されるもののポリアミド酸
の溶出に伴って、塗膜のダレ等の現象を生じ、信頼性の
ある塗膜厚の均一性を確保することが困難である。As a method for solving these drawbacks, for example, Japanese Patent Laid-Open No.
Although an electrophoresis method in a non-aqueous solvent as described in -51436 has been proposed, it is not practical because of danger such as ignition. Further, as disclosed in JP-B-48-8457, a method of immersing in an organic solvent after fixing has been proposed. In this method, although pinholes are reduced, a coating film is formed with elution of polyamic acid. It is difficult to ensure reliable uniformity of the coating thickness.
上記した様に、ポリアミド酸樹脂の電気泳動塗装の実
用化を妨げているピンホール及びダレの問題を解決し、
広く電気絶縁分野及び防蝕分野に適用しうる改良された
被膜形成法を提案することが、本発明の目的である。As described above, to solve the problem of pinholes and sagging that hinders the practical use of electrophoretic coating of polyamic acid resin,
It is an object of the present invention to propose an improved coating formation method which can be widely applied in the fields of electrical insulation and corrosion protection.
すなわち、本発明は、 電気泳動法によってポリアミド酸樹脂被膜を表面に析
出せしめた基材を、N−メチル−2−ピロリドン、N,N
−ジメチルアセトアミド、N,N−ジメチルホルムアミ
ド、1,3−ジメチル−2−イミダゾリジノン、N,N−ジエ
チルアセトアミド、ジメチルスルホキサイドおよびN,N
−ジメチルメトキシアセトアミドから選ばれた有機溶剤
と水とからなり、その重量割合が20:80〜60:40である混
合液中に浸漬した後、乾燥及び加熱を行うことを特徴と
する被膜形成方法、であり、好ましくは、有機溶剤と水
との重量割合が20:80〜95:5のものである方法である。That is, the present invention provides a base material having a polyamic acid resin film deposited on the surface thereof by electrophoresis, which is formed of N-methyl-2-pyrrolidone, N, N
-Dimethylacetamide, N, N-dimethylformamide, 1,3-dimethyl-2-imidazolidinone, N, N-diethylacetamide, dimethylsulfoxide and N, N
-A film forming method comprising: immersing in a mixed solution comprising an organic solvent selected from dimethylmethoxyacetamide and water and having a weight ratio of 20:80 to 60:40, followed by drying and heating. , Preferably a method in which the weight ratio of the organic solvent to water is from 20:80 to 95: 5.
本発明は、電気泳動法によってポリアミド酸樹脂を表
面に析出せしめた基材を、ポリアミド酸樹脂を溶解しか
つ水と均一混合可能な沸点100℃以上の有機溶剤と水の
重量割合が20:80〜95:5の混合液中に浸漬した後、乾燥
及び加熱を行うことを特徴とする被膜形成方法である。The present invention provides a base material obtained by precipitating a polyamic acid resin on the surface by electrophoresis, wherein the weight ratio of an organic solvent having a boiling point of 100 ° C. or higher and water capable of dissolving the polyamic acid resin and uniformly mixing with water is 20:80. This is a method for forming a coating film, characterized by drying and heating after immersion in a mixed solution of about 95: 5.
本発明で用いるポリアミド酸樹脂は、一般式 で表わされる繰り返し単位を有し(R2、R2は後記のとお
り)、その製法はとくに限定されないが、通常は各種ジ
アミン類をテトラカルボン酸二無水物類と有機溶媒中で
重合させて製造することができる。The polyamic acid resin used in the present invention has a general formula (R 2 and R 2 are as described below). The production method is not particularly limited, but is usually produced by polymerizing various diamines with tetracarboxylic dianhydrides in an organic solvent. can do.
上記ポリアミド酸樹脂の原料となるジアミン類は、基
材として最も一般的である金属との密着性の点から、上
記一般式におけるR2がメタ位に結合手を有する2価の芳
香族基、すなわち の構造を有する群から選ばれることが好ましく、例え
ば、3,3′−ジアミノベンゾフェノン、1,3−ビス(3−
アミノフェノキシ)ベンゼン、4,4′−ビス(3−アミ
ノフェノキシ)ビフェニル、2,2−ビス〔4−(3−ア
ミノフェノキシ)フェニル〕プロパン、2,2−ビス〔4
−(3−アミノフェノキシ)フェニル〕−1,1,1,3,3,3
−ヘキサフルオロプロパン、ビス〔4−(3−アミノフ
ェノキシ)フェニル〕スルフィド、ビス〔4−(3−ア
ミノフェノキシ)フェニル〕ケトン、ビス〔4−(3−
アミノフェノキシ)フェニル〕スルホン等が挙げられ、
これらは単独で、或いは2種以上混合して用いられる。Diamines as a raw material of the polyamic acid resin, a divalent aromatic group having a bond at the meta position in the general formula, R 2 in the above general formula, from the viewpoint of adhesion to the most common metal as a substrate, Ie It is preferably selected from the group having the structure of, for example, 3,3'-diaminobenzophenone, 1,3-bis (3-
Aminophenoxy) benzene, 4,4'-bis (3-aminophenoxy) biphenyl, 2,2-bis [4- (3-aminophenoxy) phenyl] propane, 2,2-bis [4
-(3-aminophenoxy) phenyl] -1,1,1,3,3,3
-Hexafluoropropane, bis [4- (3-aminophenoxy) phenyl] sulfide, bis [4- (3-aminophenoxy) phenyl] ketone, bis [4- (3-
Aminophenoxy) phenyl] sulfone;
These may be used alone or as a mixture of two or more.
ジアミン類と反応させるテトラカルボン酸二無水物と
は、下記式 (式中R1は、炭素数2以上の脂肪族基、環式脂肪族
基、単環式芳香族基、縮合多環式芳香族基、芳香族基が
直接又は架橋員により相互に連結された非縮合多環式芳
香族基からなる群より選ばれた4価の基を表す)で表わ
され、例えば、エチレンテトラカルボン酸二無水物、シ
クロペンタンテトラカルボン酸二無水物、ピロメリット
酸二無水物、3,3′,4,4′−ベンゾフェノンテトラカル
ボン酸二無水物、2,2′,3,3′−ベンゾフェノンテトラ
カルボン酸二無水物、3,3′,4,4′−ビフェニルテトラ
カルボン酸二無水物、2,2′,3,3′−ビフェニルテトラ
カルボン酸二無水物、2,2−ビス(3,4−ジカルボキシフ
ェニル)プロパン二無水物、2,2−ビス(2,3−ジカルボ
キシフェニル)プロパン二無水物、ビス(3,4−ジカル
ボキシフェニル)エーテル二無水物、ビス(3,4−ジカ
ルボキシフェニル)スルホン二無水物、1,1−ビス(2,3
−ジカルボキシフェニル)エタン二無水物、ビス(2,3
−ジカルボキシフェニル)メタン二無水物、ビス(3,4
−ジカルボキシフェニル)メタン二無水物、2,3,6,7−
ナフタレンテトラカルボン酸二無水物、1,4,5,8−ナフ
タレンテトラカルボン酸二無水物、1,2,5,6−ナフタレ
ンテトラカルボン酸二無水物、1,2,3,4−ベンゼンテト
ラカルボン酸二無水物、3,4,9,10−ペリレンテトラカル
ボン酸二無水物、2,3,6,7−アントラセンテトラカルボ
ン酸二無水物、1,2,7,8−フェナンントレンテトラカル
ボン酸二無水物等が用いられる。これらのうちで特に好
ましいテトラカルボン酸二無水物類は、ピロメリット酸
二無水物、3,3′,4,4′−ベンゾフェノンテトラカルボ
ン酸二無水物、3,3′,4,4′−ビフェニルテトラカルボ
ン酸二無水物、およびビス(3,4−ジカルボキシフェニ
ル)エーテル二無水物である。The tetracarboxylic dianhydride to be reacted with a diamine is represented by the following formula (In the formula, R 1 is an aliphatic group having 2 or more carbon atoms, a cycloaliphatic group, a monocyclic aromatic group, a condensed polycyclic aromatic group, or an aromatic group directly or mutually linked by a crosslinking member. Represents a tetravalent group selected from the group consisting of non-fused polycyclic aromatic groups), for example, ethylenetetracarboxylic dianhydride, cyclopentanetetracarboxylic dianhydride, pyromellitic acid Dianhydride, 3,3 ', 4,4'-benzophenonetetracarboxylic dianhydride, 2,2', 3,3'-benzophenonetetracarboxylic dianhydride, 3,3 ', 4,4'- Biphenyltetracarboxylic dianhydride, 2,2 ', 3,3'-biphenyltetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) propane dianhydride, bis (3,4-dicarboxyphenyl) ether dianhydride, bis ( 3,4-dicarboxyphenyl) sulfone dianhydride, 1,1-bis (2,3
-Dicarboxyphenyl) ethane dianhydride, bis (2,3
-Dicarboxyphenyl) methane dianhydride, bis (3,4
-Dicarboxyphenyl) methane dianhydride, 2,3,6,7-
Naphthalene tetracarboxylic dianhydride, 1,4,5,8-naphthalene tetracarboxylic dianhydride, 1,2,5,6-naphthalene tetracarboxylic dianhydride, 1,2,3,4-benzenetetra Carboxylic dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, 2,3,6,7-anthracenetetracarboxylic dianhydride, 1,2,7,8-phenanthrene tetra A carboxylic dianhydride or the like is used. Of these, particularly preferred tetracarboxylic dianhydrides are pyromellitic dianhydride, 3,3 ', 4,4'-benzophenonetetracarboxylic dianhydride, 3,3', 4,4'- Biphenyltetracarboxylic dianhydride and bis (3,4-dicarboxyphenyl) ether dianhydride.
ポリアミド酸の生成反応は通常、有機溶媒中で実施す
る。有機溶媒としては、例えば、N−メチル−2−ピロ
リドン、N,N−ジメチルアセトアミド、N,N−ジメチルホ
ルムアミド、1,3−ジメチル−2−イミダゾリノン、N,N
−ジエチルアセトアミド、N,N−ジメチルトキシアセト
アミド、ジメチルスルホキシド、ピリジン、ジメチルス
ルホン、ヘキサメチルホスホルアミド、テトラメチル尿
素、N−メチルカプロラクタム、テトラヒドロフラン、
m−ジオキサン、p−ジオキサン、1,2−ジメトキシエ
タン、ビス(2−メトキシエチル)エーテル、1,2−ビ
ス(2−メトキシエトキシ)エタン、ビス〔2−(2−
メトキシエトキシ)エチル〕エーテル等があげられる。
これらの有機溶媒は単独でも或いは2種以上混合して用
いても構わない。反応温度は通常200℃以下、好ましく
は50℃以下である。反応圧力は特に限定されず、常圧で
十分実施できる。反応時間は溶剤の種類、反応温度およ
び用いられるジアミン類や酸二無水物類により異なり、
通常ポリアミド酸の生成が完了するに十分な時間、反応
させる。通常4〜24時間で十分である。The polyamic acid forming reaction is usually performed in an organic solvent. Examples of the organic solvent include N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, 1,3-dimethyl-2-imidazolinone, N, N
-Diethylacetamide, N, N-dimethyltoxacetamide, dimethylsulfoxide, pyridine, dimethylsulfone, hexamethylphosphoramide, tetramethylurea, N-methylcaprolactam, tetrahydrofuran,
m-dioxane, p-dioxane, 1,2-dimethoxyethane, bis (2-methoxyethyl) ether, 1,2-bis (2-methoxyethoxy) ethane, bis [2- (2-
Methoxyethoxy) ethyl] ether and the like.
These organic solvents may be used alone or in combination of two or more. The reaction temperature is usually 200 ° C or lower, preferably 50 ° C or lower. The reaction pressure is not particularly limited, and the reaction can be sufficiently performed at normal pressure. The reaction time depends on the type of solvent, the reaction temperature and the diamines and acid dianhydrides used,
Usually, the reaction is allowed to proceed for a time sufficient to complete the formation of the polyamic acid. Usually 4 to 24 hours are sufficient.
上記したポリアミド酸は、その溶液のまま或いは溶液
から沈殿析出せしめて得た固形樹脂に塩基を加えて中和
し水希釈可能とする。塩基としては、アンモニア、例え
ばジアルキルアミン、ジエタノールアミン、モルホリン
等の二級アミン類;例えばトリエチルアミン、トリブチ
ルアミン、トリエタノールアミン、トリイソプロパノー
ルアミン、ジメチルエタノールアミン、ジメチルイソプ
ロパノールアミン、ジエチルエタノールアミン、ジメチ
ルベンジルアミン等の三級アミン類;苛性ソーダ、苛性
カリ等の無機塩基類が用いられるが、水溶化後の安定性
や得られる被膜の性質から三級アミン酸が特に好まし
い。The above-mentioned polyamic acid is neutralized by adding a base to a solid resin obtained as it is or by precipitating it out of the solution to make it dilutable in water. As the base, ammonia, for example, secondary amines such as dialkylamine, diethanolamine, and morpholine; for example, triethylamine, tributylamine, triethanolamine, triisopropanolamine, dimethylethanolamine, dimethylisopropanolamine, diethylethanolamine, dimethylbenzylamine and the like Inorganic bases such as caustic soda and caustic potash are used, but tertiary amine acids are particularly preferred from the viewpoint of stability after water-solubilization and the properties of the resulting film.
水希釈性を付与する為に必要な塩基量はポリアミド酸
のカルボキシル当量に対して30〜110モル%が一般的で
あり特に40〜100モル%であることが好ましい。中和を
行うことによってポリアミド酸は、完全に水溶性となる
か、或いは部分的に水溶化して懸濁状態となり、水希釈
性を有するようになる。いずれの場合においても電気泳
動は可能である。こうして得られたポリアミド酸水溶液
に上記ポリアミド酸の生成に用いられた有機溶媒が存在
しても構わず、又、別途添加しても構わないが、添加量
は使用するポリアミド酸の0.1〜15重量倍が好ましい。The amount of the base necessary for imparting water dilutability is generally 30 to 110 mol%, particularly preferably 40 to 100 mol%, based on the carboxyl equivalent of the polyamic acid. By performing the neutralization, the polyamic acid becomes completely water-soluble or partially solubilized to be in a suspended state, so that the polyamic acid becomes water-dilutable. In either case, electrophoresis is possible. The organic solvent used for producing the polyamic acid may be present in the polyamic acid aqueous solution thus obtained, or may be separately added, but the amount added is 0.1 to 15% by weight of the polyamic acid used. Double is preferred.
この際、浴中に例えば酸化チタン、酸化鉄、アルミ
ナ、硫酸バリウム等の充填剤や着色剤を加えても構わな
い。電気泳動浴の樹脂濃度は、通常2〜30重量%、より
好ましくは3〜20重量%である。電気泳動は被覆対象と
なる金属等の基材を浴中に浸漬し、該基材を陽極とし浴
槽壁又は不活性金属の対向電極を蔭極として通常10〜50
0ボルトの電圧を印加して行う。又、必要に応じて定電
流にて電気泳動を行っても構わない。この場合電流密度
としては通常5〜1000mA/dm2にて行われる。中和された
ポリアミド酸塩は、陽極である基材へ移動し、該基材表
面において電荷を消失し、水に不溶化し基材表面を覆
う。At this time, a filler or a coloring agent such as titanium oxide, iron oxide, alumina and barium sulfate may be added to the bath. The resin concentration of the electrophoresis bath is usually 2 to 30% by weight, more preferably 3 to 20% by weight. Electrophoresis is usually performed by immersing a base material such as a metal to be coated in a bath, using the base material as an anode and a bathtub wall or a counter electrode of an inert metal as a negative electrode, usually 10 to 50.
This is performed by applying a voltage of 0 volt. Electrophoresis may be performed at a constant current as needed. In this case, the current density is usually 5 to 1000 mA / dm 2 . The neutralized polyamic acid salt moves to the base material serving as the anode, loses electric charge on the surface of the base material, becomes insoluble in water, and covers the surface of the base material.
基材上のポリアミド酸樹脂の被膜厚は、通常5〜50μ
である。The film thickness of the polyamic acid resin on the substrate is usually 5 to 50 μm.
It is.
又、本発明にいう基材とは、導電性物質であれば特に
限定されるものではないが、例えば、各種金属、カーボ
ン、プラスチックやセラミックの如き絶縁体上に形成さ
れた金属層、あるいはこれらの金属が表面処理を施され
ていてもよい。The substrate according to the present invention is not particularly limited as long as it is a conductive substance. For example, various metals, carbon, metal layers formed on an insulator such as plastic or ceramic, or these May be surface-treated.
上記の如くして得られた基材上のポリアミド酸樹脂被
膜は、電気泳動中に基材表面で起こる水の電気分解反応
で生じた気泡を含有しており、このまま乾燥した場合に
はしばしばピンホールが塗膜に存在するため、絶縁不良
や孔触の原因となる。従って乾燥加熱工程において基材
上のポリアミド酸がリフローし、気泡によって生じた欠
陥を修復せしめることが重要である。しかしながら、基
本的にポリアミド酸樹脂自体軟化点が高く極めてリフロ
ーをしにくいことが、上記の欠陥の修復を困難にしてい
る。前記したポリアミド酸樹脂を溶解しうる有機溶剤に
浸漬等の方法で接触させることは、樹脂を溶解リフロー
せしめることによってピンホール部を修復しうる有力な
方法であるが、樹脂を溶解せしめるために基材表面の垂
直部にダレ現象を生じ膜厚が不均一となったり、エッジ
部の如きは極端に膜厚が薄くなって絶縁、防蝕等の本来
の目的が著しく損なわれる。The polyamic acid resin film on the substrate obtained as described above contains bubbles generated by the electrolysis reaction of water that occurs on the surface of the substrate during electrophoresis. Since the holes are present in the coating film, it causes insulation failure and hole contact. Therefore, it is important that the polyamic acid on the substrate is reflowed in the drying and heating step to repair defects caused by bubbles. However, the fact that the polyamic acid resin itself has a high softening point and is extremely difficult to reflow makes it difficult to repair the above-mentioned defects. Contacting the above-mentioned polyamic acid resin with an organic solvent capable of dissolving by a method such as immersion is a powerful method capable of repairing the pinhole portion by dissolving and reflowing the resin. A sagging phenomenon occurs in the vertical portion of the material surface, resulting in a non-uniform film thickness, or an extremely thin film at an edge portion, which significantly impairs the original purpose such as insulation and corrosion protection.
本発明においては上記のポリアミド酸樹脂を溶解しか
つ水と均一混合可能な有機溶媒を水と所定の比率に混合
した混合液中に、上記の如くして得たポリアミド酸樹脂
を電気泳動によって表面に析出せしめた基材を浸漬す
る。In the present invention, the polyamic acid resin obtained as described above is subjected to electrophoresis in a mixed solution obtained by dissolving the polyamic acid resin and mixing an organic solvent capable of being uniformly mixed with water at a predetermined ratio with water. The base material precipitated is immersed.
本発明においては、電気泳動で析出したポリアミド酸
樹脂は、既に水に不溶である為に、有機溶媒のみがポリ
アミド酸樹脂に移行してかつ膨潤させ、かつ膨潤したポ
リアミド酸樹脂は、上記混合液には不溶である為に、上
記したダレ等の現象を起こすこと無く乾燥加熱工程にお
いてピンホールを修復することが出来るのである。In the present invention, since the polyamic acid resin precipitated by electrophoresis is already insoluble in water, only the organic solvent migrates to the polyamic acid resin and swells, and the swollen polyamic acid resin is the mixed liquid Since it is insoluble in, the pinhole can be repaired in the drying and heating step without causing the above-mentioned phenomenon such as sagging.
上記の有機溶媒と水の混合割合は好ましくは、重量比
で20:80〜95:5である。有機溶媒がこの割合より少ない
場合には、ピンホールの修復効果が不十分であり、又有
機溶媒がこの範囲より多くなると、乾燥加熱時にダレを
生じるので不適当である。特に上記の有機溶媒と水の混
合割合は、40:60〜80:20が特に好ましい。The mixing ratio of the above organic solvent and water is preferably 20:80 to 95: 5 by weight. When the amount of the organic solvent is less than this ratio, the effect of repairing pinholes is insufficient, and when the amount of the organic solvent exceeds this range, sagging occurs during drying and heating. Particularly, the mixing ratio of the above organic solvent and water is particularly preferably from 40:60 to 80:20.
又、上記混合への浸漬時間は、1〜300秒、好ましく
は2〜200秒である。浸漬時間が1秒より少ない場合に
は、ピンホールの修復効果が不十分であり、又浸漬時間
が300秒より多くなると、乾燥加熱時にダレを生じるの
で不適当である。上記の有機溶媒は、沸点が、100℃以
上が適当であり、特に120℃以上が好ましい。上記の有
機溶媒の例としては、N−メチル−2−ピロリドン、N,
N−ジメチルアセトアミド、N,N−ジメチルホルムアミ
ド、1,3−ジメチル−2−イミダゾリジノン、N,N−ジエ
チルアセトアミド、ジメチルスルホキサイド、N,N−ジ
メチルメトキシアセトアミド、エチレングリコールモノ
エチルエーテル、エチレングリコールモノブチルエーテ
ル、ジエチレングリコールモノメチルエーテル、ジエチ
レングリコールモノブチルエーテル、ジエチレングリコ
ールジメチルエーテル等が用いられるが、ポリアミド酸
樹脂を溶解し、かつ水と均一混合出来かつ沸点が100℃
以上であれば、これらの例示された有機溶媒に限定され
るものではない。The immersion time in the above mixture is 1 to 300 seconds, preferably 2 to 200 seconds. When the immersion time is shorter than 1 second, the effect of repairing the pinhole is insufficient, and when the immersion time is longer than 300 seconds, dripping occurs during drying and heating. The above organic solvent preferably has a boiling point of 100 ° C. or higher, particularly preferably 120 ° C. or higher. Examples of the above organic solvents include N-methyl-2-pyrrolidone, N,
N-dimethylacetamide, N, N-dimethylformamide, 1,3-dimethyl-2-imidazolidinone, N, N-diethylacetamide, dimethylsulfoxide, N, N-dimethylmethoxyacetamide, ethylene glycol monoethyl ether, Ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, and the like are used. The polyamic acid resin is dissolved, can be uniformly mixed with water, and has a boiling point of 100 ° C.
If it is above, it is not limited to these exemplified organic solvents.
上記の如くして処理されたポリアミド酸樹脂被覆基材
は、加熱炉中で乾燥加熱され、溶媒の揮散と共にイミド
化反応が進行し、耐熱性に優れたポリイミド樹脂被膜に
転換される。加熱方法は、熱風乾燥、赤外線乾燥、遠赤
外線乾燥、電磁誘導加熱等公知の各種の方法を単独また
は組合わせて使用することができる。当然のことなが
ら、加熱方法によって所要の温度や時間は異なるが、イ
ミド化反応が十分に進行する150℃以上が好ましく、180
〜300℃に最終温度が到達する条件を選ぶことが特に好
ましい。The polyamic acid resin-coated substrate treated as described above is dried and heated in a heating furnace, the imidization reaction proceeds with the evaporation of the solvent, and is converted into a polyimide resin film having excellent heat resistance. As the heating method, various known methods such as hot air drying, infrared drying, far infrared drying, and electromagnetic induction heating can be used alone or in combination. Needless to say, the required temperature and time vary depending on the heating method, but it is preferably 150 ° C. or more at which the imidization reaction sufficiently proceeds,
It is particularly preferred to choose the conditions under which the final temperature reaches ~ 300 ° C.
上述の如く本発明の被膜形成においては、ピンホール
やダレの如き欠陥がなく、その結果絶縁信頼性や防蝕信
頼性に優れた耐熱性の被膜を提供することが出来る。As described above, in the film formation of the present invention, there is no defect such as pinholes or sagging, and as a result, a heat-resistant film excellent in insulation reliability and corrosion resistance can be provided.
以下、実施例を挙げ本発明をより具体的に説明する。 Hereinafter, the present invention will be described more specifically with reference to examples.
実施例1 3,3′−ジアミノベンゾフェノンと3,3′,4,4′−ベン
ゾフェノンテトラカルボン酸二無水物をN,N−ジメチル
アセトアミド中、10℃にて反応させポリアミド酸樹脂を
得た。本樹脂の固型分100重量部に対してジメチルエタ
ノールアミン28.1重量部(100モル%)を加え、撹拌混
合した。その後水を加え電気泳動用ポリアミド酸水溶液
Aを調製した。本水溶液の樹脂固型分は、7重量%であ
った。本水溶液をステンレス製の槽に入れ、アルミニウ
ム板を浸漬し、アルミニウム板を陰極、槽を陽極として
100v10秒間電圧を印加し電気泳動を行い、ポリアミド酸
樹脂被膜を表面に析出せしめた基材とした。その後N,N
−ジメチルアセトアミド30重量部と水70重量部からなる
混合液に該基材を10秒間浸漬し、140℃にて1時間つい
で250℃にて1時間の加熱乾燥を行った。被膜厚は21μ
であった。本基板の外観は平滑であり、常態及び250℃2
00℃時間加熱処理後の耐電圧は、ともに1kv以上であっ
た。Example 1 3,3'-Diaminobenzophenone and 3,3 ', 4,4'-benzophenonetetracarboxylic dianhydride were reacted in N, N-dimethylacetamide at 10 ° C to obtain a polyamic acid resin. 28.1 parts by weight (100 mol%) of dimethylethanolamine was added to 100 parts by weight of the solid content of the resin, and the mixture was stirred and mixed. Thereafter, water was added to prepare a polyamic acid aqueous solution A for electrophoresis. The resin solid content of this aqueous solution was 7% by weight. Put this aqueous solution in a stainless steel tank, immerse the aluminum plate, and use the aluminum plate as the cathode and the tank as the anode.
Electrophoresis was performed by applying a voltage of 100 v for 10 seconds to obtain a base material having a polyamic acid resin film deposited on the surface. Then N, N
The substrate was immersed in a mixed solution of 30 parts by weight of dimethylacetamide and 70 parts by weight of water for 10 seconds, and dried by heating at 140 ° C. for 1 hour and then at 250 ° C. for 1 hour. The coating thickness is 21μ
Met. The appearance of this substrate is smooth, normal and 250 ° C2
The withstand voltage after heat treatment at 00 ° C. for 1 hour was 1 kv or more.
実施例2 2,2−ビス〔4−(3−アミノフェノキシ)フェニ
ル〕プロパンと3,3′,4,4′−ベンゾフェノンテトラカ
ルボン酸二無水物をN,N−ジメチルアセトアミド中、10
℃にて反応させポリアミド酸樹脂を得た。本樹脂の固型
分100重量部に対してジメチルエタノールアミン15.0重
量部(70モル%)を加えて、撹拌混合した。その後水を
加え電気泳動用ポリアミド酸水溶液Bを調製した。本水
溶液の樹脂固型分は、10重量%であった。本水溶液をス
テンレス製の槽に入れ、アルミニウム板を浸漬し、アル
ミニウム板を陰極、槽を陽極として100v20秒間電圧を印
加し電気泳動を行い、ポリアミド酸樹脂被膜を表面に析
出せしめた基材とした。その後N,N−ジメチルアセトア
ミド60重量部と水40重量部からなる混合液に該基材を6
秒間浸漬し、140℃にて1時間ついで250℃にて1時間の
加熱乾燥を行った。被膜厚は35μであった。本基板の外
観は平滑であり、状態及び250℃200時間加熱処理後の耐
電圧は、ともに1kv以上であった。Example 2 2,2-bis [4- (3-aminophenoxy) phenyl] propane and 3,3 ', 4,4'-benzophenonetetracarboxylic dianhydride were added to N, N-dimethylacetamide in 10%.
C. to obtain a polyamic acid resin. 15.0 parts by weight (70 mol%) of dimethylethanolamine was added to 100 parts by weight of the solid content of the resin, and the mixture was stirred and mixed. Thereafter, water was added to prepare an aqueous solution of polyamic acid B for electrophoresis. The resin solid content of this aqueous solution was 10% by weight. This aqueous solution was placed in a stainless steel tank, the aluminum plate was immersed, a voltage was applied to the aluminum plate as a cathode and the tank was used as an anode for 100 v for 20 seconds, electrophoresis was performed, and a polyamic acid resin film was deposited on the surface as a substrate. . Then, the base material was mixed with a mixture of 60 parts by weight of N, N-dimethylacetamide and 40 parts by weight of water.
The substrate was immersed for 2 seconds and dried by heating at 140 ° C. for 1 hour and then at 250 ° C. for 1 hour. The coating thickness was 35μ. The appearance of this substrate was smooth, and both the state and the withstand voltage after heat treatment at 250 ° C. for 200 hours were 1 kv or more.
実施例3 1,3−ビス(3−アミノフェノキシ)ベンゼンと3,
3′,4,4′−ベンゾフェノンテトラカルボン酸二無水物
をN,N−ジメチルアセトアミド中、10℃にて反応させポ
リアミド酸樹脂を得た。本樹脂の固型分100重量部に対
してトリエタノールアミン30.3重量部(80モル%)を加
え、撹拌混合した。その後水を加えて電気泳動用ポリア
ミド酸水溶液Cを調製した。本水溶液の樹脂固型分は、
8重量%であった。本水溶液をステンレス製の槽に入
れ、アルミニウム板を浸漬し、アルミニウム板を陰極、
槽を陽極として200mA/dm2の電流を20秒間通電し電気泳
動を行い、ポリアミド酸樹脂被膜を表面に析出せしめた
基材とした。その後N−メチル−2−ピロリドン20重量
部と水80重量部からなる混合液に該基材を200秒間浸漬
し、140℃にて1時間ついで250℃にて1時間の加熱乾燥
を行った。被膜厚は30μであった。本基板の外観は平滑
であり、常態及び250℃200時間加熱処理後の耐電圧は、
ともに1kv以上であった。Example 3 1,3-bis (3-aminophenoxy) benzene and 3,3
3 ′, 4,4′-Benzophenonetetracarboxylic dianhydride was reacted in N, N-dimethylacetamide at 10 ° C. to obtain a polyamic acid resin. 30.3 parts by weight (80 mol%) of triethanolamine was added to 100 parts by weight of the solid content of the present resin, followed by stirring and mixing. Thereafter, water was added to prepare a polyamic acid aqueous solution C for electrophoresis. The resin solid component of this aqueous solution is
It was 8% by weight. This aqueous solution was placed in a stainless steel bath, the aluminum plate was immersed, and the aluminum plate was
Electrophoresis was performed by applying a current of 200 mA / dm 2 for 20 seconds using the bath as an anode to obtain a substrate having a polyamic acid resin film deposited on the surface. Thereafter, the substrate was immersed in a mixed solution of 20 parts by weight of N-methyl-2-pyrrolidone and 80 parts by weight of water for 200 seconds, and dried by heating at 140 ° C. for 1 hour and then at 250 ° C. for 1 hour. The coating thickness was 30μ. The appearance of this substrate is smooth, and the withstand voltage after heating at 250 ° C. for 200 hours under normal conditions is as follows:
Both were more than 1kv.
実施例4 1,3−ビス(3−アミノフェノキシ)ベンゼンとピロ
メリット酸二無水物をN,N−ジメチルアセトアミド中、1
0℃にて反応させポリアミド酸樹脂を得た。本樹脂の固
型分100重量部に対してジメチルエタノールアミン14.0
重量部(40モル%)を加え、撹拌混合した。その後水を
加え電気泳動用ポリアミド酸水溶液Dを調製した。本水
溶液の樹脂固型分は、8重量%であった。本水溶液をス
テンレス製の槽に入れ、アルミニウム板を浸漬し、アル
ミニウム板を陰極、槽を陽極として200mA/dm2の電流を2
0秒間通電し電気泳動を行い、ポリアミド酸樹脂被膜を
表面に析出せしめた。その後N,N−ジメチルホルムアミ
ド50重量部と水50重量部からなる混合液に該基材を100
秒間浸漬し、140℃にて1時間ついで250℃にて1時間の
加熱乾燥を行った。被膜厚は30μであった。本基板の外
観は平滑であり、常態及び250℃200時間加熱処理後の耐
電圧は、ともに1kv以上であった。Example 4 1,3-bis (3-aminophenoxy) benzene and pyromellitic dianhydride were added to N, N-dimethylacetamide in 1
The reaction was carried out at 0 ° C. to obtain a polyamic acid resin. Dimethylethanolamine 14.0 based on 100 parts by weight of the solid content of the resin
Parts by weight (40 mol%) were added and mixed by stirring. Thereafter, water was added to prepare a polyamic acid aqueous solution D for electrophoresis. The resin solid content of this aqueous solution was 8% by weight. This aqueous solution was placed in a stainless steel tank, the aluminum plate was dipped, the aluminum plate cathode, a current of 200 mA / dm 2 to the bath as the anode 2
The electrophoresis was performed by applying a current for 0 second to deposit a polyamic acid resin film on the surface. Thereafter, the base material was added to a mixed solution consisting of 50 parts by weight of N, N-dimethylformamide and 50 parts by weight of water.
The substrate was immersed for 2 seconds and dried by heating at 140 ° C. for 1 hour and then at 250 ° C. for 1 hour. The coating thickness was 30μ. The appearance of the substrate was smooth, and the withstand voltage after heating at 250 ° C. for 200 hours under normal conditions was 1 kv or more.
比較例1 実施例1と全く同様にして電気泳動用水溶液を用い
て、アルミニウム板に電気泳動を行い、ポリアミド酸樹
脂被膜を表面に析出せしめた基材とした。その後水に20
0秒間浸漬し、実施例1と同様にして加熱乾燥を行っ
た。被膜厚は21μであった。本基板の外観は平滑であっ
たが、常態及び250℃200時間加熱処理後の耐電圧は、と
もに1kv以下しかなかった。Comparative Example 1 Electrophoresis was performed on an aluminum plate using an aqueous solution for electrophoresis in exactly the same manner as in Example 1 to obtain a base material having a polyamic acid resin film deposited on its surface. Then 20 in water
It was immersed for 0 seconds, and dried by heating in the same manner as in Example 1. The coating thickness was 21μ. Although the appearance of this substrate was smooth, the withstand voltage after heating at 250 ° C. for 200 hours under normal conditions was only 1 kv or less.
比較例2 実施例1と全く同様にして電気泳動用水溶液を用い
て、アルミニウム板に電気泳動を行い、ポリアミド酸樹
脂を表面に析出せしめた基材とした。その後N,N−ジメ
チルアセトアミド95重量部と水5重量部の混合液に該基
材を5秒間浸漬し、実施例1と同様にして加熱乾燥を行
った。被膜厚は20μであった。本基板の外観には、ダレ
が発生し、常態の耐電圧は1kv以上であったが、250℃20
0時間加熱処理後の耐電圧は、1kv以下と低かった。Comparative Example 2 An electrophoresis was performed on an aluminum plate using an aqueous solution for electrophoresis in exactly the same manner as in Example 1 to obtain a substrate on which a polyamic acid resin was deposited on the surface. Thereafter, the substrate was immersed in a mixed solution of 95 parts by weight of N, N-dimethylacetamide and 5 parts by weight of water for 5 seconds, and heated and dried in the same manner as in Example 1. The coating thickness was 20μ. Although sagging occurred on the appearance of this substrate, the withstand voltage in normal state was 1 kv or more,
The withstand voltage after the heat treatment for 0 hours was as low as 1 kv or less.
Claims (1)
を表面に析出せしめた基材を、N−メチル−2−ピロリ
ドン、N,N−ジメチルアセトアミド、N,N−ジメチルホル
ムアミド、1,3−ジメチル−2−イミダゾリジノン、N,N
−ジエチルアセトアミド、ジメチルスルホキサイドおよ
びN,N−ジメチルメトキシアセトアミドから選ばれた有
機溶剤と水とからなり、その重量割合が20:80〜60:40で
ある混合液中に浸漬した後、乾燥及び加熱を行うことを
特徴とする被膜形成方法。1. A substrate on which a polyamic acid resin coating is deposited on the surface by electrophoresis, is coated with N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, 1,3-dimethyl -2-imidazolidinone, N, N
-Diethylacetamide, dimethyl sulfoxide and N, comprising an organic solvent selected from N-N-dimethylmethoxyacetamide and water, and immersed in a mixed solution having a weight ratio of 20:80 to 60:40, and then dried. And heating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1139163A JP2837178B2 (en) | 1989-06-02 | 1989-06-02 | Coating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1139163A JP2837178B2 (en) | 1989-06-02 | 1989-06-02 | Coating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH036396A JPH036396A (en) | 1991-01-11 |
| JP2837178B2 true JP2837178B2 (en) | 1998-12-14 |
Family
ID=15239050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1139163A Expired - Lifetime JP2837178B2 (en) | 1989-06-02 | 1989-06-02 | Coating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2837178B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4819016B2 (en) * | 2007-10-01 | 2011-11-16 | ゲットナー・ファンデーション・エルエルシー | Manufacturing method of liquid crystal display device |
| JP2009086685A (en) * | 2008-12-24 | 2009-04-23 | Nec Lcd Technologies Ltd | Manufacturing method of liquid crystal display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5341701B2 (en) * | 1973-04-14 | 1978-11-06 |
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1989
- 1989-06-02 JP JP1139163A patent/JP2837178B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH036396A (en) | 1991-01-11 |
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