JP2849100B2 - Magnetoelectric conversion element and method of manufacturing the same - Google Patents
Magnetoelectric conversion element and method of manufacturing the sameInfo
- Publication number
- JP2849100B2 JP2849100B2 JP63323678A JP32367888A JP2849100B2 JP 2849100 B2 JP2849100 B2 JP 2849100B2 JP 63323678 A JP63323678 A JP 63323678A JP 32367888 A JP32367888 A JP 32367888A JP 2849100 B2 JP2849100 B2 JP 2849100B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- hole
- conversion element
- lead
- magnetoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Hall/Mr Elements (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】 [産業上の利用分野] 本発明は磁電変換素子に関し、特に素子の薄型化を計
ると同時にリードの強度を向上させた磁電変換素子およ
びその製造方法に関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoelectric conversion element, and more particularly to a magnetoelectric conversion element in which the thickness of an element is reduced and the strength of a lead is improved, and a method for manufacturing the same.
[従来の技術] 磁電変換素子としては、一般に言うイオン注入法によ
り感磁部を形成したホール素子、エピタキシャル成長法
により感磁部を形成したホール素子、蒸着法により感磁
部を形成したホール素子、電気抵抗が磁界によって変化
する磁気抵抗効果を利用した磁気抵抗素子,磁気トラン
ジスタ等のように一般に磁気信号を入力し、電気信号の
出力を取り出す素子が知られている。[Prior Art] As a magnetoelectric conversion element, a Hall element in which a magnetically sensitive part is formed by an ion implantation method, a Hall element in which a magnetically sensitive part is formed by an epitaxial growth method, a Hall element in which a magnetically sensitive part is formed by a vapor deposition method, 2. Description of the Related Art There are generally known elements such as a magnetoresistive element using a magnetoresistive effect in which electric resistance is changed by a magnetic field, a magnetic transistor, and the like, for inputting a magnetic signal and extracting an electric signal output.
近年、磁電変換素子、なかでもホール素子等はビデオ
カセットレコーダ,カセットテープレコーダ,コンパク
トディスクプレーヤ等に用いられるブラシレスモータに
広く使用されており、その高感度とともに素子の小型
化,薄型化が要求されている。2. Description of the Related Art In recent years, magnetoelectric transducers, especially hall transducers, have been widely used in brushless motors used in video cassette recorders, cassette tape recorders, compact disc players, and the like. ing.
従来は素子の薄型化を計るために、第6図に示すよう
な構成の素子に対してホール素子基板の裏面を研磨する
ことによる薄型化、リードの薄型化,ワイヤボンディン
ググループの高さの最適化等の努力がなされている。Conventionally, in order to reduce the thickness of the device, the thickness of the device having the configuration shown in FIG. 6 is reduced by polishing the back surface of the Hall element substrate, the thickness of the lead is reduced, and the height of the wire bonding group is optimized. Efforts are being made.
第6図に示した素子は、リード401上に接着剤5を介
して基板1が接合されている。基板1上にはホール素子
感磁部2が形成されており、さらにホール素子感磁部2
上には電極3が形成されている。電極3に接続されたボ
ンディングワイヤ6はリード401,402に接続されてい
る。このような素子全体はモールド用のエポキシ樹脂7
によって封止されている。In the element shown in FIG. 6, the substrate 1 is bonded on the lead 401 via the adhesive 5. A Hall element magneto-sensitive section 2 is formed on a substrate 1.
The electrode 3 is formed thereon. The bonding wire 6 connected to the electrode 3 is connected to the leads 401 and 402. The entire device is made of epoxy resin 7 for molding.
Is sealed by.
[発明が解決しようとする課題] しかしながら、従来の方法では、例えば、ホール素子
用の基板1として、GaAs等のように脆い材料を用いた場
合、基板1の裏面を研摩すると、基板の脆さのために割
れ等により歩留まりが著しく悪くなる。さらに、リード
を薄くするとリードの強度が低下し、信頼性上問題があ
り、素子の薄型化を計ることが困難であった。[Problems to be Solved by the Invention] However, in the conventional method, for example, when a fragile material such as GaAs is used for the substrate 1 for a Hall element, when the back surface of the substrate 1 is polished, As a result, the yield is significantly deteriorated due to cracks or the like. Further, when the lead is thinned, the strength of the lead is reduced, and there is a problem in reliability, and it has been difficult to reduce the thickness of the element.
そこで、本発明の目的は上述した問題点を解消し、歩
留まりが良く、信頼性が高く、薄型化しかつ小型化した
磁電変換素子を提供することにある。Therefore, an object of the present invention is to solve the above-mentioned problems, and to provide a magnetoelectric conversion element which has a good yield, high reliability, and is thin and small.
[課題を解決するための手段] このような目的を達成するために、本発明による磁電
変換素子は、GaAs基板上に感磁部が形成され、感磁部の
電極がボンディングワイヤによってリードに接続されて
いる磁電変換素子において、前記リードのアイランド部
に前記基板の外形より大きな穴が設けられ、該穴に前記
基板が挿入され、前記アイランド部の裏面と前記基板の
底面が同一平面上にあるように、前記アイランド部と前
記基板とが前記穴の内側面と前記基板の側面との間を埋
めて充填された接着剤によってのみ固定され、前記基
板、前記感磁部、前記アイランド部および前記ボンディ
ングワイヤが樹脂によって封止され、前記基板の底面が
前記封止用樹脂と直接に接していることを特徴とする。[Means for Solving the Problems] In order to achieve such an object, in the magnetoelectric conversion element according to the present invention, a magnetosensitive part is formed on a GaAs substrate, and electrodes of the magnetosensitive part are connected to leads by bonding wires. In the magneto-electric conversion element described above, a hole larger than the outer shape of the substrate is provided in the island portion of the lead, the substrate is inserted into the hole, and the back surface of the island portion and the bottom surface of the substrate are on the same plane. As described above, the island portion and the substrate are fixed only by an adhesive filling the gap between the inner side surface of the hole and the side surface of the substrate, and the substrate, the magnetically sensitive portion, the island portion, and the The bonding wire is sealed with a resin, and the bottom surface of the substrate is in direct contact with the sealing resin.
さらに、本発明による磁電変換素子の製造方法は、Ga
As基板上に感磁部が形成され、感磁部の電極がボンディ
ングワイヤによってリードに接続されている磁電変換素
子において、前記リードのアイランド部に前記基板の外
形より大きな穴が設ける工程、前記リードの裏面に接着
テープを貼り付ける工程、該穴に前記基板を挿入し接着
剤によって前記穴の内側面と前記基板の側面とを固定す
る工程、および前記接着テープを剥離する工程を有する
ことを特徴とする。Further, the method for manufacturing a magnetoelectric conversion element according to the present invention includes the steps of:
In a magneto-electric conversion element in which a magnetically sensitive part is formed on a substrate and an electrode of the magnetically sensitive part is connected to a lead by a bonding wire, a step of providing a hole larger than the outer shape of the substrate in an island part of the lead; A step of attaching an adhesive tape to the back surface of the substrate, a step of inserting the substrate into the hole and fixing an inner surface of the hole and a side surface of the substrate with an adhesive, and a step of peeling the adhesive tape. And
[作用] 本発明によれば、感磁部が形成されている基板がリー
ドのアイランド部に設けられた穴に挿入され、アイラン
ド部の裏面と基板の底面が同一平面上にあるように、穴
の内側面と基板の側面とが接着剤によって固定され、基
板の底面が封止用樹脂と直接に接しているので、素子の
薄型化および小型化を計ることができる。According to the present invention, the substrate on which the magnetic sensing portion is formed is inserted into the hole provided in the island portion of the lead, and the hole is formed so that the back surface of the island portion and the bottom surface of the substrate are on the same plane. The inner side surface of the substrate and the side surface of the substrate are fixed by an adhesive, and the bottom surface of the substrate is in direct contact with the sealing resin, so that the device can be made thinner and smaller.
[実施例] 以下、図面を参照して本発明の実施例をより詳細に説
明する。[Example] Hereinafter, an example of the present invention will be described in more detail with reference to the drawings.
以下の実施例においては、ホール素子を例として説明
する。In the following embodiments, a Hall element will be described as an example.
第1図は、本発明のホール素子の構成を模式的に示す
平面図である。FIG. 1 is a plan view schematically showing the configuration of the Hall element of the present invention.
第1図においてリード401に接着剤を介して基板1が
接合されている。基板1上にはホール素子感磁部2が形
成され、さらにホール素子感磁部2上には電極3が形成
されている。電極3からはボンディングワイヤ6が延び
てリード410,411,412および413に接続している。さらに
素子はボンディングワイヤ6も含めてエポキシ樹脂7に
より封止されている。In FIG. 1, the substrate 1 is joined to the lead 401 via an adhesive. A Hall element magnetic sensing part 2 is formed on the substrate 1, and an electrode 3 is formed on the Hall element magnetic sensing part 2. A bonding wire 6 extends from the electrode 3 and is connected to the leads 410, 411, 412 and 413. Further, the element including the bonding wire 6 is sealed with an epoxy resin 7.
ただし、本発明においては、ホール素子が搭載されて
いるリードのアイランド部は貫通孔が設けられており、
その断面は後述する第5図に示すようになる。貫通孔の
形状は、ホール素子基板の形にあった矩形の穴が良く用
いられる。However, in the present invention, the through-hole is provided in the island portion of the lead on which the Hall element is mounted,
The cross section is as shown in FIG. 5 described later. As the shape of the through hole, a rectangular hole that matches the shape of the Hall element substrate is often used.
直径50mm,厚さ300μmのノンドープGaAs半絶縁性の基
板に、Si+を150keVの加速電圧で、注入量5×1012cm-2
の条件のもとで、イオン注入を行なった後、アニーリン
グを行い、引き続いてメサエッチングによりホール素子
感磁部2を形成し、更に続いて、入出力用のオーミック
電極3をAu/Ni/Au−Geの構成で形成することにより、ホ
ール素子を作製した。On a non-doped GaAs semi-insulating substrate having a diameter of 50 mm and a thickness of 300 μm, Si + was implanted at an acceleration voltage of 150 keV and a dose of 5 × 10 12 cm −2.
After performing ion implantation under the conditions described above, annealing is performed, subsequently, the Hall element magneto-sensitive portion 2 is formed by mesa etching, and then the input / output ohmic electrode 3 is formed of Au / Ni / Au. A Hall element was fabricated by forming with the structure of -Ge.
その後、ダイシングを行い直径50mmの基板を切断して
0.4mm角の多数の素子を作製した。After that, dicing is performed and the substrate with a diameter of 50 mm is cut.
A number of 0.4 mm square devices were fabricated.
次に、第3図のように、ホール素子が挿入されるアイ
ランド部が穴加工されたリード430を作製するために、
第2図に示した厚さ0.5mm、縦30mm、横150mmの銅板8を
用意し、型を用いてアイランド部の中心に穴があくよう
に打ち抜くことでアイランド部の大きさl3=1.2mm角で
あり、アイランド部の中心に大きさl4=0.6mm角があい
た。厚さd2=200μmのリード430を作製した。Next, as shown in FIG. 3, in order to manufacture a lead 430 in which an island portion into which a Hall element is inserted is formed with a hole,
The thickness shown in FIG. 2 0.5 mm, vertical 30 mm, prepared copper plate 8 of the horizontal 150 mm, size l 3 = 1.2 mm of the island portion by punching the pitting so by using a mold in the center of the island portion It was a corner, and there was a size l 4 = 0.6 mm square at the center of the island. A lead 430 having a thickness d 2 = 200 μm was produced.
次に、ダイシングにより得られた個別の素子ペレット
を、作製したリード430のアイランド部にダイボンディ
ングするために、第4図に示すようにリード430の裏面
に、厚さ50μmのポリテトラフルオロエチレンからなる
接着テープ9を貼りつけ、接着剤5を介して、素子ペレ
ットがアイランド部に形成された穴にはいるようにダイ
ボンディングを行った。Next, in order to die-bond the individual element pellets obtained by dicing to the island portions of the prepared leads 430, a 50 μm-thick polytetrafluoroethylene was formed on the back surface of the leads 430 as shown in FIG. Then, die bonding was performed via the adhesive 5 so that the element pellets entered the holes formed in the island portions.
次に接着テープ9を剥離した後、電極3をボンデイン
グワイヤ6を介してリード430,431と接続した。続いて
トランスファーモールド法によりエポキシ樹脂7で封止
を行ない、第5図に示すような全体の厚さが0.65mmのホ
ール素子を作製した。Next, after the adhesive tape 9 was peeled off, the electrode 3 was connected to the leads 430 and 431 via the bonding wire 6. Subsequently, sealing was performed with an epoxy resin 7 by a transfer molding method, thereby producing a Hall element having an overall thickness of 0.65 mm as shown in FIG.
このようにして、薄型化して小型化した素子を作製す
ることができた。In this way, a thinned and miniaturized device could be manufactured.
以上では、本発明の磁電変換素子の一例として、ホー
ル素子を例にとって説明してきたが、磁気抵抗効果を利
用した磁電変換素子についても本発明はすべて有効に適
用できる。さらにまた、これらの効果と他の効果を併用
した磁電変換素子も勿論本発明の範囲内にある。In the above, a Hall element has been described as an example of the magnetoelectric conversion element of the present invention. However, the present invention can also be effectively applied to a magnetoelectric conversion element using a magnetoresistance effect. Furthermore, a magnetoelectric conversion element using these effects in combination with other effects is, of course, within the scope of the present invention.
[発明の効果] 以上説明したように、本発明によれば、リードのアイ
ランド部に穴が設けられ、感磁部が形成された基板がそ
の穴に挿入接着されるので、素子の薄型化および小型化
を計ることができる。[Effects of the Invention] As described above, according to the present invention, a hole is provided in an island portion of a lead, and a substrate on which a magnetically sensitive portion is formed is inserted and adhered to the hole. The size can be reduced.
また、本発明によれば、素子の薄型化のためにアイラ
ンド部においては磁電変換素子が装着される部分以外の
厚さを薄くする必要がないので、リードの強度を十分取
ることが可能であり、信頼性を向上させることができ
る。Further, according to the present invention, it is not necessary to reduce the thickness of the island portion other than the portion where the magnetoelectric conversion element is mounted in order to make the element thinner, so that it is possible to obtain sufficient lead strength. , Reliability can be improved.
さらに、また、リードから電極面までの高さが低くな
ることから、ボンディングワイヤが短くて済み、ワイヤ
ボンディング時のワイヤループの調整が容易となり、ワ
イヤボンディングの歩留まりが大幅に向上するとともに
従来不可能であった量産化が可能となる。In addition, since the height from the lead to the electrode surface is reduced, the bonding wire can be shortened, the adjustment of the wire loop at the time of wire bonding becomes easy, the yield of wire bonding is greatly improved, and it is impossible in the past. Mass production that was previously possible.
第1図は本発明の磁電変換素子の一実施例を示す平面
図、 第2図は本発明の実施例におけるリードの作製に用いら
れる銅板の斜視図、 第3図は本発明のホール素子の作製に用いられるリード
を示し、図(A)は平面図、図(B)はc−d線に沿っ
た断面図、 第4図は第3図に示したリードを用いてホール素子を作
製する一行程を示す素子の断面図、 第5図は本発明の磁電変換素子の実施例を示す側面図、 第6図は従来の磁電変換素子の一例を示す側面図であ
る。 1……基板、2……ホール素子感磁部、3……電極、5
……接着剤、6……ボンディングワイヤ、7……エポキ
シ樹脂、8……銅板、9……接着テープ、401,402410,4
11,412,413,420,421,422,423,430,431……リード。FIG. 1 is a plan view showing one embodiment of a magnetoelectric conversion element of the present invention, FIG. 2 is a perspective view of a copper plate used for manufacturing a lead in the embodiment of the present invention, and FIG. FIG. 4A shows a plan view, FIG. 4B shows a cross-sectional view taken along line cd, and FIG. 4 shows a method of manufacturing a Hall element using the leads shown in FIG. FIG. 5 is a cross-sectional view of the element showing one process, FIG. 5 is a side view showing an embodiment of the magnetoelectric conversion element of the present invention, and FIG. 6 is a side view showing an example of a conventional magnetoelectric conversion element. DESCRIPTION OF SYMBOLS 1 ... board | substrate, 2 ... Hall element magnetic sensing part, 3 ... electrode, 5
... adhesive, 6 ... bonding wire, 7 ... epoxy resin, 8 ... copper plate, 9 ... adhesive tape, 401, 402410, 4
11,412,413,420,421,422,423,430,431 …… Lead.
フロントページの続き (56)参考文献 特開 昭61−256776(JP,A) 特開 昭58−53852(JP,A) 特開 平1−184836(JP,A) 実開 昭57−121154(JP,U) 特公 昭52−20316(JP,B2) (58)調査した分野(Int.Cl.6,DB名) H01L 43/06 H01L 43/04 H01L 21/60 301 H01L 23/50Continuation of the front page (56) References JP-A-61-256776 (JP, A) JP-A-58-53852 (JP, A) JP-A-1-184836 (JP, A) JP-A-57-121154 (JP) , U) JP 52-20316 (JP, B2) (58) Fields investigated (Int. Cl. 6 , DB name) H01L 43/06 H01L 43/04 H01L 21/60 301 H01L 23/50
Claims (2)
電極がボンディングワイヤによってリードに接続されて
いる磁電変換素子において、前記リードのアイランド部
に前記基板の外形より大きな穴が設けられ、該穴に前記
基板が挿入され、前記アイランド部の裏面と前記基板の
底面が同一平面上にあるように、前記アイランド部と前
記基板とが前記穴の内側面と前記基板の側面との間を埋
めて充填された接着剤によってのみ固定され、前記基
板、前記感磁部、前記アイランド部および前記ボンディ
ングワイヤが樹脂によって封止され、前記基板の底面が
前記封止用樹脂と直接に接していることを特徴とする磁
電変換素子。1. A magneto-electric conversion element in which a magnetically sensitive part is formed on a GaAs substrate, and an electrode of the magnetically sensitive part is connected to a lead by a bonding wire, wherein a hole larger than the outer shape of the substrate is formed in an island part of the lead. Provided, the substrate is inserted into the hole, and the island portion and the substrate are formed on the inner side surface of the hole and the side surface of the substrate so that the back surface of the island portion and the bottom surface of the substrate are on the same plane. The substrate, the magnetic sensing part, the island part, and the bonding wire are sealed with resin only by filling and filling the gap, and the bottom surface of the substrate is directly connected to the sealing resin. A magnetoelectric conversion element being in contact with.
電極がボンディングワイヤによってリードに接続されて
いる磁電変換素子の製造方法において、前記リードのア
イランド部に前記基板の外形より大きな穴を設ける工
程、前記リードの裏面に接着テープを貼り付ける工程、
該穴に前記基板を挿入し接着剤によって前記穴の内側面
と前記基板の側面とを固定する工程、および前記接着テ
ープを剥離する工程を有することを特徴とする磁電変換
素子の製造方法。2. A method of manufacturing a magneto-electric transducer in which a magnetically sensitive portion is formed on a GaAs substrate, and electrodes of the magnetically sensitive portion are connected to leads by bonding wires. Providing a large hole, attaching an adhesive tape to the back surface of the lead,
A method for manufacturing a magnetoelectric conversion element, comprising: a step of inserting the substrate into the hole, fixing an inner surface of the hole and a side surface of the substrate with an adhesive, and removing the adhesive tape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63323678A JP2849100B2 (en) | 1988-12-23 | 1988-12-23 | Magnetoelectric conversion element and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63323678A JP2849100B2 (en) | 1988-12-23 | 1988-12-23 | Magnetoelectric conversion element and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02170584A JPH02170584A (en) | 1990-07-02 |
| JP2849100B2 true JP2849100B2 (en) | 1999-01-20 |
Family
ID=18157384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63323678A Expired - Lifetime JP2849100B2 (en) | 1988-12-23 | 1988-12-23 | Magnetoelectric conversion element and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2849100B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6661083B2 (en) * | 2001-02-27 | 2003-12-09 | Chippac, Inc | Plastic semiconductor package |
| JP2003031752A (en) * | 2001-07-11 | 2003-01-31 | Sony Corp | Lead frame, semiconductor device, and method of manufacturing the same |
| JP6105898B2 (en) * | 2012-10-26 | 2017-03-29 | 旭化成エレクトロニクス株式会社 | Magnetic sensor and manufacturing method thereof |
| JP6110886B2 (en) * | 2014-06-17 | 2017-04-05 | 旭化成エレクトロニクス株式会社 | Hall sensor |
| CN105185900B (en) * | 2014-06-17 | 2018-07-06 | 旭化成微电子株式会社 | Hall sensor |
| JP6353287B2 (en) * | 2014-06-17 | 2018-07-04 | 旭化成エレクトロニクス株式会社 | Hall sensor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5220316A (en) * | 1975-08-08 | 1977-02-16 | Hitachi Metals Ltd | Process for producing pellets of iron ore |
| JPS57121154U (en) * | 1981-01-20 | 1982-07-28 | ||
| JPH01184836A (en) * | 1988-01-13 | 1989-07-24 | Murata Mfg Co Ltd | Semiconductor device |
-
1988
- 1988-12-23 JP JP63323678A patent/JP2849100B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02170584A (en) | 1990-07-02 |
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