JP2849117B2 - Optical IC card manufacturing method - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a method for manufacturing an optical IC card.

2. Description of the Related Art An IC card is expected to be a high-performance card that replaces a magnetic card that has been conventionally used. At present, there is a card having a capacity of 64 Kbytes only according to the ISO standard. Therefore,
When this IC card is used as an identification card, it is possible to input various character information by providing a security function that is more complicated than a conventional magnetic card, but input image information to this IC card. Because there is not enough capacity, there is a plan to increase the thickness of the IC card. Also, by using optical memory,
Some optical cards have a storage capacity of up to 2MByte.

Problems to be Solved by the Invention Increasing the thickness of an IC card to increase the storage capacity is inconvenient to carry and impairs the inherent features of the card. In addition, since the optical card does not have an arithmetic processing function, its features depend on the performance of the device system. Moreover, the input information can be easily decoded by a combination of a light source and a CCD sensor or the like, so that the security function is inferior. Furthermore, conventional IC cards and optical cards have no compatibility in the systems used, and have a problem in practical use.

Means for Solving the Problems After a solution of a ferroelectric polymer material is applied to a concave portion formed in a substrate to bury a photoreversible memory, an IC chip is buried in the substrate.

Function An IC with a photoreversible memory capable of inputting a large amount of information while eliminating the drawbacks in the manufacturing process where the solvent of the ferroelectric polymer material touches the conductive part of the IC chip and has an arithmetic function. Cards can be manufactured.

Example An example of the present invention will be described in the order of the manufacturing steps. FIG. 2 shows the substrate 1 formed in the substrate forming step. The substrate 1 has a concave portion 2 and an opening 3 and is formed by a processing method such as a stamper, etching, photolithography, and melt molding. The back surface of the substrate 1 is covered with a protective layer 4. It is preferable that a group for optical memory tracking is formed on the bottom surface of the concave portion 2.

FIG. 3 shows a process of embedding the reversible memory, first of all,
An electrode film 5 is formed on the bottom surface by means such as vapor deposition. A photoreversible memory 6 is provided on the electrode film 5, and an electrode film 7 is formed on the photoreversible memory 6. The electrode films 5 and 7 can be formed by means such as metal deposition, CVD, and sputtering, and at least the electrode film 7 on the light-irradiating side is a transparent or translucent electrode in order to obtain translucency. It is a membrane. When it is made transparent, it is made of a material such as tin-doped indium oxide (ITO), tin oxide, undoped indium oxide, and zinc oxide. For translucent, gold, platinum, silver, copper, lead, zinc, aluminum,
It is formed of a material such as nickel, tantalum, cobalt, niobium, palladium, and tin. Further, the photoreversible memory 6 is formed of a ferroelectric polymer material, and its forming method may be, for example, a solution coating method. The recording / reproducing principle of the photoreversible memory 6 is preliminarily polarized by utilizing the property that the coercive electric field of the dielectric hysteresis curve, which appears when an alternating electric field is applied by a ferroelectric polymer material, decreases with increasing temperature. While applying a weak reverse electric field such that the polarization does not reverse at room temperature to the sample, an arbitrary part of the sample is irradiated with the light beam, and the temperature of the irradiated part is raised to near the Curie point, and the irradiated part is irradiated. An EPROM that records information by reversing the polarization of the information and reproduces the recorded information when irradiated with a light beam weaker than the time of recording. Various compounds have been reported as such ferroelectric polymer materials, but those having strong dielectric properties and exhibiting a rectangular shape in dielectric hysteresis measurement are desirable. Specifically, polyvinylidene fluoride, vinylidene fluoride and ethylene trifluoride copolymer, vinylidene fluoride and tetrafluoroethylene copolymer, vinylidene fluoride and vinyl fluoride copolymer, vinylidene fluoride, Examples include terpolymers of ethylene fluoride and propylene hexafluoride, polyvinylidene cyanide, vinylidene cyanide, and vinyl acetate copolymer. Of these, vinylidene fluoride and ethylene trifluoride copolymer are most preferable. A dye may be added to such a ferroelectric polymer material. further,
The photoreversible memory 6 is formed of a ferroelectric polymer material as described above, and the forming method is a solution coating method such as dip coating, spray coating, blade coating, roller coating, curtain coating, or the like. Among them, roller coating is a preferable method in terms of making the film thickness uniform. Further, a terminal line 8 is connected to the electrode films 5 and 7.

FIG. 4 shows an IC chip embedding step, in which an opening 3 of the substrate 1 is formed.
An antistatic wall 9 is formed along the bottom surface and the peripheral wall, and an IC chip 11 held by a support 10 is embedded inside the antistatic wall 9. The antistatic wall 9 is formed of a conductive elastomer or casing.

FIG. 1 shows that the surface of the substrate 1 is covered with a protective layer 12 in a final assembly process. The protective layer 12 includes the IC chip
11 input / output unit or terminal C1 contacted with the terminal line 8
To C8 and the magnetic stripe 13 are formed. The arrangement of these terminals C1 to C8 is as shown in FIGS.
Referring to the electronic circuit diagram of the figure, the terminal C1 is the IC chip 11
A power supply terminal for supplying the power supply Vcc to the microprocessor 14 within, a reset terminal to which a reset signal is applied,
C3 is a clock terminal to which a clock pulse is applied, C4 is a voltage supply terminal for supplying an erasing voltage -VE to the photoreversible memory 6 via the semiconductor switch 15 as a switch element and the electrode film 5, and C5 is A ground terminal grounded to ground, C6 is a voltage Vp− when writing information to the optical reversible memory 6.
Voltage supply terminal to supply to p, C7 is I / O contact connection terminal, C8
Denotes a semiconductor switch 16 as a switch element and the electrode film 7
And a voltage supply terminal for supplying a voltage VE for writing to the optical reversible memory 6 via the. The semiconductor switches 15, 16
Is controlled by the microprocessor 14.

In such a configuration, when the substrate 1 is set on the terminal, the terminals C1 to C8 are connected to the input / output unit of the terminal. Then, as described above, by applying a voltage to the photoreversible memory 6 and irradiating the photoreversible memory 6 with a light beam according to the input data, desired information is input. Unlike the conventional IC card, the storage capacity of the optical reversible memory 6 can be very large, up to 200 KByte per 1 cm ² . By operating the terminal, the microprocessor 14
Can perform various arithmetic processes. " One of the arithmetic processes is card recognition. For example, the security function can be enhanced by turning on the semiconductor switches 15 and 16 only when the microprocessor 14 recognizes the password input from the terminal.

Further, in manufacturing an optical IC card, the photoreversible memory 6 is formed by applying a solution of a ferroelectric polymer material, and thereafter, the IC chip 11 is embedded in the substrate 1 so that the ferroelectric polymer 6 is embedded. The disadvantage in the manufacturing process that the solvent of the material touches the conductive part of the IC chip 11 can be eliminated. Further, by disposing the IC chip 11 at an end of the substrate 1 that is off the center, the IC chip 11
The effect on 11 can be reduced. Furthermore, since the IC chip 11 is surrounded by the antistatic wall 9, it is less affected by external noise and can suppress malfunction.

Effect of the Invention As described above, according to the present invention, after a solution of a ferroelectric polymer material is applied to the concave portion formed on the substrate and the photoreversible memory is embedded, the IC chip is embedded in the substrate. , Equipped with an optical reversible memory that can input a large amount of information while eliminating defects in the manufacturing process where the solvent of the ferroelectric polymer material touches the conductive part of the IC chip, and also has an arithmetic function This has the effect that an IC card can be manufactured.

[Brief description of the drawings]

1 shows an embodiment of the present invention. FIG. 1 is a vertical sectional side view showing a completed state, FIG. 2 is a vertical sectional side view showing a substrate forming step, and FIG. 3 is a vertical sectional view showing a photoreversible memory embedding step. FIG. 4 is a vertical side view showing an IC chip embedding process, and FIG.
The figure is a perspective view showing a completed state, FIG. 6 is a plan view showing an arrangement of terminals, and FIG. 7 is an electronic circuit diagram. 1 ... substrate, 6 ... photoreversible memory, 11 ... IC chip, 14
…… Microprocessor, 15,16 …… Switch element, C1
~ C8 ... Terminal

──────────────────────────────────────────────────続 き Continued from the front page (56) References JP-A-62-284489 (JP, A) JP-A-64-48288 (JP, U) (58) Fields investigated (Int. Cl. ⁶ , DB name) B42D 15/10 521 B42D 15/10 511 G11B 9/02 G11B 7/24 572

Claims (1)

(57) [Claims] An optical IC wherein an IC chip is embedded in a substrate after a solution of a ferroelectric polymer material is applied to a recess formed in the substrate to embed a photoreversible memory. Card manufacturing method.