JP2860799B2 - Manufacturing method of temperature sensitive resistor - Google Patents
Manufacturing method of temperature sensitive resistorInfo
- Publication number
- JP2860799B2 JP2860799B2 JP1189956A JP18995689A JP2860799B2 JP 2860799 B2 JP2860799 B2 JP 2860799B2 JP 1189956 A JP1189956 A JP 1189956A JP 18995689 A JP18995689 A JP 18995689A JP 2860799 B2 JP2860799 B2 JP 2860799B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- resistance
- resistor
- sensitive resistor
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000010409 thin film Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 9
- 229910052573 porcelain Inorganic materials 0.000 claims description 7
- 239000010408 film Substances 0.000 claims description 5
- 238000001771 vacuum deposition Methods 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims 1
- 150000003624 transition metals Chemical class 0.000 claims 1
- 239000000919 ceramic Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910000314 transition metal oxide Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、広い温度範囲にわたってリニア性に優れた
抵抗温度特性を有する感温抵抗器の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial application field) The present invention relates to a method for manufacturing a temperature-sensitive resistor having resistance-temperature characteristics excellent in linearity over a wide temperature range.
（従来の技術） 温度計測や温度補償等を行うために、温度検出素子と
して対象回路に接続し一定電流を流して信号電圧を検出
するようにした感温抵抗器が使用されている。(Prior Art) In order to perform temperature measurement, temperature compensation, and the like, a temperature-sensitive resistor that is connected to a target circuit and detects a signal voltage by flowing a constant current is used as a temperature detecting element.
この種の感温抵抗器としてアルミナ，フォルステライ
ト等の磁器基板上にPt,Ni,Cu等の正の抵抗温度係数を有
する抵抗体を形成した構造が知られている。この感温抵
抗器は第５図に示すような抵抗温度特性を有しており、
抵抗が温度変化に対して直線的に変化する（リニア性が
有る）という望ましい特性を有しているが、抵抗の変化
量が小さい（勾配θが小さい）という欠点がある。さら
に50Ω乃至1kΩ程度の抵抗値しか得られないので、検出
信号電圧が小さくなるため専用の増幅回路を必要とす
る。その故抵抗値を高くするため、抵抗体の寸法を長く
したり、抵抗体を薄膜化する等の試みがなされている。
しかしそのためには抵抗体の材料費がアップし、また薄
膜化する場合には材料費はダウンするが薄膜のサイズ効
果により抵抗温度係数が大幅に小さくなる結果、感温抵
抗特性が損われてしまう欠点が生ずる。As this type of temperature-sensitive resistor, a structure is known in which a resistor having a positive temperature coefficient of resistance such as Pt, Ni, or Cu is formed on a porcelain substrate such as alumina or forsterite. This temperature sensitive resistor has a resistance temperature characteristic as shown in FIG.
It has the desirable characteristic that the resistance changes linearly (has linearity) with temperature change, but has the disadvantage that the amount of change in resistance is small (the gradient θ is small). Further, since only a resistance value of about 50 Ω to 1 kΩ can be obtained, a dedicated amplifier circuit is required because the detection signal voltage is reduced. Therefore, in order to increase the resistance value, attempts have been made to increase the size of the resistor, to reduce the thickness of the resistor, and the like.
However, for that purpose, the material cost of the resistor increases, and when the film thickness is reduced, the material cost is reduced, but the temperature coefficient of resistance is greatly reduced due to the size effect of the thin film, and the temperature-sensitive resistance characteristic is impaired. Disadvantages arise.
次に、負の抵抗温度係数を有するNTCサーミスタを感
温抵抗器として用いることが知られているが、このNTC
サーミスタは第６図に示すように抵抗が温度変化に対し
て急激に変化し、しかもリニア性に劣るので利用できる
温度範囲に限界がある。また抵抗値の調整が困難なので
抵抗値のバラツキが大きい。Next, it is known that an NTC thermistor having a negative temperature coefficient of resistance is used as a temperature-sensitive resistor.
As shown in FIG. 6, the resistance of the thermistor changes abruptly with a change in temperature and is poor in linearity, so that the usable temperature range is limited. Further, since it is difficult to adjust the resistance value, the resistance value varies greatly.
また感温抵抗器としてNTCサーミスタと固定抵抗器と
を並列又は直列接続したものが知られている。この感温
抵抗器は第７図に示すような特性を有し、NTCサーミス
タの特性Ａと固定抵抗器の特性Ｂとを合成した特性Ｃが
感温抵抗器の特性となる。しかしこの特性Ｃは低温度領
域では特性Ｂに接近すると共に、高温度領域では特性Ａ
に接近する特性となるため、リニア性のある特性領域Ｌ
が制約される欠点がある。従って検出できる温度範囲が
狭くなる。またこの感温抵抗器は２つの部品をマウント
して形成するので、サイズが必然的に大きくなり、実装
効率が低下する。さらにNTCサーミスタの抵抗調整が困
難なため回路とのマッチングがとりにくくなる。Further, a temperature-sensitive resistor in which an NTC thermistor and a fixed resistor are connected in parallel or in series is known. This temperature sensitive resistor has the characteristics as shown in FIG. 7, and the characteristic C obtained by combining the characteristic A of the NTC thermistor and the characteristic B of the fixed resistor is the characteristic of the temperature sensitive resistor. However, the characteristic C approaches the characteristic B in the low temperature region, and the characteristic A in the high temperature region.
, The characteristic region L having linearity
Has the disadvantage of being restricted. Therefore, the detectable temperature range is narrowed. Further, since this temperature sensitive resistor is formed by mounting two components, the size is inevitably increased, and the mounting efficiency is reduced. Further, since it is difficult to adjust the resistance of the NTC thermistor, matching with the circuit becomes difficult.
（発明が解決しようとする課題） このように従来の感温抵抗器では、いずれにおいても
広い範囲にわたってリニア性に優れた特性が得られない
という問題がある。(Problems to be Solved by the Invention) As described above, in the conventional temperature-sensitive resistors, there is a problem that characteristics excellent in linearity cannot be obtained over a wide range in any case.
本発明は以下のような問題に対処してなされたもの
で、従来問題を解決できる感温抵抗器の製造方法を提供
することを目的とするものである。The present invention has been made in view of the following problems, and has as its object to provide a method of manufacturing a temperature-sensitive resistor that can solve the conventional problems.
［発明の構成］ （課題を解決するための手段） 上記目的を達成するために本発明は、Fe,Mn,Ni等の遷
移金属の酸化膜からなる負の抵抗温度係数を有する磁器
半導体基板の両端に電極を形成する工程、前記基板の表
面であって、前記電極間にまたがるようにNi−Cr合金か
らなる抵抗温度係数の小さな薄膜抵抗体を真空蒸着法又
はスパッタ法によって形成する工程、前記薄膜抵抗体を
パターニングして、所望の抵抗値となるように調整を行
う工程とを含むことを特徴とするものである。[Means for Solving the Problems] In order to achieve the above object, the present invention provides a porcelain semiconductor substrate having a negative temperature coefficient of resistance made of a transition metal oxide film such as Fe, Mn, and Ni. Forming electrodes at both ends, forming a thin-film resistor having a small temperature coefficient of resistance made of a Ni-Cr alloy on the surface of the substrate and straddling between the electrodes by a vacuum evaporation method or a sputtering method, Patterning the thin-film resistor and adjusting it to have a desired resistance value.
（作 用） 負の抵抗温度係数を有する磁器半導体基板上に抵抗温
度係数の小さな薄膜抵抗体を設けて感温抵抗器を構成す
ることにより、薄膜抵抗体の抵抗調整が容易となるの
で、広い温度範囲にわたってリニア性に優れた特性が抵
抗値のバラツキを少なく抑えて得られる。薄膜抵抗体の
抵抗調整は、真空蒸着法等による薄膜形成手段及びフォ
トエッチング法等の加工手段を利用することにより、容
易にバラツキを少なく抑えることができる。(Operation) By providing a thin film resistor having a small resistance temperature coefficient on a ceramic semiconductor substrate having a negative temperature coefficient of resistance to constitute a temperature sensitive resistor, the resistance adjustment of the thin film resistor becomes easy, so that a wide range is provided. Characteristics excellent in linearity over a temperature range can be obtained with a small variation in resistance value. The resistance of the thin-film resistor can be easily reduced by using a thin-film forming means such as a vacuum evaporation method and a processing means such as a photo-etching method.
（実施例） 以下図面を参照して本発明実施例を説明する。(Example) Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図は本発明の製造方法によって得られた感温抵抗
器を示す斜視図で、１は負の抵抗温度係数を有する磁器
半導体基板で例えばFe,Mn,Ni等の遷移金属の酸化膜から
成り、この基板１の両端には電極2,3が設けられてい
る。４は抵抗温度係数の小さな薄膜抵抗体で例えばNi−
Cr合金から成っている。FIG. 1 is a perspective view showing a temperature-sensitive resistor obtained by the manufacturing method of the present invention, and 1 is a ceramic semiconductor substrate having a negative temperature coefficient of resistance, for example, from a transition metal oxide film such as Fe, Mn, and Ni. The electrodes 2 and 3 are provided at both ends of the substrate 1. 4 is a thin film resistor having a small temperature coefficient of resistance, for example, Ni-
Made of Cr alloy.
第３図（ａ）乃至（ｄ）は第１図の感温抵抗器の製造
方法を示すもので以下工程順に説明する。先ず、第３図
（ａ）のように前記のような負の抵抗温度係数を有する
チップ状の磁器半導体基板１を用意する。次に第３図
（ｂ）のように磁器半導体基板１の両端に金属から成る
電極2,3を形成する。次に第３図（ｃ）のように磁器半
導体基板１の表面に電極2,3にまたがるように、前記の
ように小さな抵抗温度係数を有する薄膜抵抗体４を真空
蒸着法又はスパッタ法によって形成する。続いて第３図
（ｄ）のように薄膜抵抗体４をフォトエッチング法，レ
ーザートリンミング法，機械的加工法等から選ばれた加
工手段によってパターニングして所望の抵抗値となるよ
うに調整する。これによって第１図のような感温抵抗器
が得られる。3 (a) to 3 (d) show a method of manufacturing the temperature-sensitive resistor shown in FIG. 1, and will be described below in the order of steps. First, as shown in FIG. 3A, a chip-shaped porcelain semiconductor substrate 1 having a negative temperature coefficient of resistance as described above is prepared. Next, as shown in FIG. 3B, electrodes 2 and 3 made of metal are formed on both ends of the ceramic semiconductor substrate 1. Next, as shown in FIG. 3 (c), a thin film resistor 4 having a small temperature coefficient of resistance as described above is formed on the surface of the porcelain semiconductor substrate 1 by a vacuum evaporation method or a sputtering method so as to extend over the electrodes 2 and 3. I do. Subsequently, as shown in FIG. 3 (d), the thin film resistor 4 is patterned by a processing means selected from a photo-etching method, a laser trimming method, a mechanical processing method, or the like, and adjusted to have a desired resistance value. . Thus, a temperature-sensitive resistor as shown in FIG. 1 is obtained.
このような本実施例によれば、負の抵抗温度係数を有
する磁器半導体基板１上に薄膜抵抗体４を真空蒸着法等
によって所望の薄膜に形成し、続いてこの薄膜抵抗体４
をフォトエッチング等の加工手段によって所望のパター
ンに加工することによって所望の抵抗値によって調整す
ることができる。これによって薄膜抵抗体４の抵抗値を
例えば40KΩ乃至50KΩ程度のものが得られるようにな
る。また抵抗値のバラツキを少なく抑えることができ
る。According to the present embodiment, the thin film resistor 4 is formed into a desired thin film on the ceramic semiconductor substrate 1 having a negative temperature coefficient of resistance by a vacuum deposition method or the like.
Is processed into a desired pattern by a processing means such as photoetching or the like, whereby it can be adjusted by a desired resistance value. Thereby, the thin film resistor 4 having a resistance value of, for example, about 40 KΩ to 50 KΩ can be obtained. In addition, variation in the resistance value can be suppressed.
第２図は本実施例によって得られた特性を示すもの
で、Ａは磁器半導体基板１の特性,Bは薄膜抵抗体４の特
性,CはＡとＢとを合成した特性を示している。第２図か
ら明らかなように本実施例によれば、広い温度範囲Ｌに
わたってリニア性に優れた特性を得ることができる。FIG. 2 shows the characteristics obtained by this embodiment, where A is the characteristic of the ceramic semiconductor substrate 1, B is the characteristic of the thin film resistor 4, and C is the characteristic obtained by combining A and B. As is clear from FIG. 2, according to the present embodiment, characteristics having excellent linearity can be obtained over a wide temperature range L.
第４図（ａ）乃至（ｄ）は本発明の他の製造方法を示
すもので、磁器半導体として円筒形状を用いた例を示す
ものである。先ず第４図（ａ）のように負の抵抗温度係
数を有する円筒状の磁器半導体11を用意する。次に第４
図（ｂ）のように磁器半導体11の両端に電極12,13を形
成する。次に第４図（ｃ）のように磁器半導体11の表面
に電極12,13にまたがるように小さな抵抗温度係数を有
する薄膜抵抗体14を前記のような方法によって形成す
る。続いて第４図（ｄ）のように薄膜抵抗体４を前記の
ような方法によって加工して所望の抵抗値となるように
調整する。4 (a) to 4 (d) show another manufacturing method of the present invention and show an example in which a cylindrical shape is used as a porcelain semiconductor. First, as shown in FIG. 4A, a cylindrical ceramic semiconductor 11 having a negative temperature coefficient of resistance is prepared. Then the fourth
Electrodes 12 and 13 are formed at both ends of a ceramic semiconductor 11 as shown in FIG. Next, as shown in FIG. 4C, a thin film resistor 14 having a small temperature coefficient of resistance is formed on the surface of the ceramic semiconductor 11 so as to extend over the electrodes 12 and 13 by the above-described method. Subsequently, as shown in FIG. 4 (d), the thin film resistor 4 is processed by the above-described method and adjusted to have a desired resistance value.
このような製造方法によっても磁器半導体11の形状が
異なるだけで、第１図の構造と同様な効果が得られる感
温抵抗体を製造することができる。Even by such a manufacturing method, a temperature-sensitive resistor having the same effect as the structure of FIG. 1 can be manufactured only by changing the shape of the ceramic semiconductor 11.
［発明の効果］ 以上述べたように本発明によれば、遷移金属の酸化膜
からなる負の抵抗温度係数を有する磁器半導体上に抵抗
温度係数の小さな薄膜抵抗体を設け、パターニングによ
って所望の抵抗値が得られるような調整を行うようにし
たので、広い温度範囲にわたってリニア性に優れた特性
の感温抵抗器の製造方法を提供することができる。特に
薄膜抵抗体としたので抵抗値の調整を精度良く行うこと
ができるという特有の効果の奏する。[Effects of the Invention] As described above, according to the present invention, a thin film resistor having a small temperature coefficient of resistance is provided on a ceramic semiconductor having a negative temperature coefficient of resistance made of a transition metal oxide film, and a desired resistance is obtained by patterning. Since the adjustment is performed so as to obtain the value, it is possible to provide a method of manufacturing a temperature-sensitive resistor having excellent linearity over a wide temperature range. In particular, since the thin film resistor is used, a specific effect that the resistance value can be adjusted with high accuracy is exhibited.
第１図は本発明の製造方法によって得られた感温抵抗器
を示す斜視図、第２図は本実施例によって得られた抵抗
器の抵抗温度特性図、第３図（ａ）乃至（ｄ）は本発明
の感温抵抗器の製造方法の第１の実施例を示す斜視図、
第４図（ａ）乃至（ｄ）は本発明の感温抵抗器の製造方
法の第２の実施例を示す斜視図、第５図乃至第７図はい
ずれも従来の抵抗器の抵抗温度特性図である。 １……負の抵抗温度係数を有する磁器半導体、 ４……小さな抵抗温度係数を有する薄膜抵抗体。FIG. 1 is a perspective view showing a temperature-sensitive resistor obtained by the manufacturing method of the present invention, FIG. 2 is a resistance-temperature characteristic diagram of the resistor obtained by this embodiment, and FIGS. 3 (a) to 3 (d). 1) is a perspective view showing a first embodiment of a method for manufacturing a temperature-sensitive resistor according to the present invention,
4 (a) to 4 (d) are perspective views showing a second embodiment of the method of manufacturing a temperature-sensitive resistor according to the present invention, and FIGS. 5 to 7 are resistance-temperature characteristics of a conventional resistor. FIG. 1 ... a porcelain semiconductor having a negative temperature coefficient of resistance; 4 ... a thin film resistor having a small temperature coefficient of resistance.
Claims (1)
の抵抗温度係数を有する磁器半導体基板の両端に電極を
形成する工程、 前記基板の表面であって、前記電極間にまたがるように
Ni−Cr合金からなる抵抗温度係数の小さな薄膜抵抗体を
真空蒸着法又はスパッタ法によって形成する工程、 前記薄膜抵抗体をパターニングして、所望の抵抗値とな
るように調整を行う工程、 とを含むことを特徴とする感温抵抗器の製造方法。1. A step of forming electrodes at both ends of a porcelain semiconductor substrate having a negative temperature coefficient of resistance made of an oxide film of a transition metal such as Fe, Mn, Ni, etc., on the surface of the substrate, between the electrodes. To straddle
A step of forming a thin film resistor having a small temperature coefficient of resistance made of a Ni-Cr alloy by a vacuum evaporation method or a sputtering method, and a step of patterning the thin film resistor and adjusting it to have a desired resistance value. A method for manufacturing a temperature-sensitive resistor, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1189956A JP2860799B2 (en) | 1989-07-21 | 1989-07-21 | Manufacturing method of temperature sensitive resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1189956A JP2860799B2 (en) | 1989-07-21 | 1989-07-21 | Manufacturing method of temperature sensitive resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0354801A JPH0354801A (en) | 1991-03-08 |
| JP2860799B2 true JP2860799B2 (en) | 1999-02-24 |
Family
ID=16250007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1189956A Expired - Lifetime JP2860799B2 (en) | 1989-07-21 | 1989-07-21 | Manufacturing method of temperature sensitive resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2860799B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1135570C (en) * | 1997-06-04 | 2004-01-21 | 泰科电子有限公司 | Circuit protection device |
| JP4170497B2 (en) | 1999-02-04 | 2008-10-22 | 日本碍子株式会社 | Wire conductor for harness |
| US6300859B1 (en) | 1999-08-24 | 2001-10-09 | Tyco Electronics Corporation | Circuit protection devices |
| CN117238599A (en) * | 2022-06-06 | 2023-12-15 | 国巨电子（中国）有限公司 | Low temperature coefficient of resistance current sensing resistor and method of manufacturing same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55123103A (en) * | 1979-03-16 | 1980-09-22 | Hitachi Ltd | Method of trimming thick film thermistor |
| JPS58138002A (en) * | 1982-02-12 | 1983-08-16 | 松下電器産業株式会社 | Manufacturing method of thin film platinum temperature sensor |
| JPS63273347A (en) * | 1987-05-01 | 1988-11-10 | Oki Electric Ind Co Ltd | Resistor |
| JPH01125901A (en) * | 1987-11-11 | 1989-05-18 | Murata Mfg Co Ltd | Thermistor |
-
1989
- 1989-07-21 JP JP1189956A patent/JP2860799B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0354801A (en) | 1991-03-08 |
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