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JP2862662B2 - Semiconductor sealing method - Google Patents
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JP2862662B2 - Semiconductor sealing method - Google Patents

Semiconductor sealing method

Info

Publication number
JP2862662B2
JP2862662B2 JP29299590A JP29299590A JP2862662B2 JP 2862662 B2 JP2862662 B2 JP 2862662B2 JP 29299590 A JP29299590 A JP 29299590A JP 29299590 A JP29299590 A JP 29299590A JP 2862662 B2 JP2862662 B2 JP 2862662B2
Authority
JP
Japan
Prior art keywords
sealing resin
guard ring
hot air
sealing
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP29299590A
Other languages
Japanese (ja)
Other versions
JPH04165632A (en
Inventor
浩太郎 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Chemi Con Corp
Original Assignee
Nippon Chemi Con Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Chemi Con Corp filed Critical Nippon Chemi Con Corp
Priority to JP29299590A priority Critical patent/JP2862662B2/en
Publication of JPH04165632A publication Critical patent/JPH04165632A/en
Application granted granted Critical
Publication of JP2862662B2 publication Critical patent/JP2862662B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION 【産業上の利用分野】[Industrial applications]

この発明は、回路基板上に実装すべきは導体素子の回
路基板上での封止に用いられる半導体封止方法に関す
る。
The present invention relates to a semiconductor sealing method used for sealing a conductive element to be mounted on a circuit board on the circuit board.

【従来の技術】[Prior art]

混成集積回路では、回路基板に導体パターンが形成さ
れた後、抵抗等の受動素子とともに、半導体素子として
ベアチップが実装される。回路基板には、ベアチップの
周辺部にベアチップの端子と接続すべき導体パターンが
形成されており、ベアチップの各端子と導体パターンと
はワイヤボンディングにより導体ワイヤを似て電気的な
接続が行われる。 このような電気的な接続が行われた後、導体ワイヤ及
びベアチップを包囲する範囲に封止樹脂を堰き止める堰
止め枠としてのガードリングが封止樹脂で形成され、こ
のガードリングの硬化を待って、その内側に封止樹脂が
充填され、その封止樹脂でベアチップ、導体ワイヤ及び
その周辺部の導体パターンが封止される。
In a hybrid integrated circuit, after a conductor pattern is formed on a circuit board, a bare chip is mounted as a semiconductor element together with a passive element such as a resistor. A conductor pattern to be connected to the terminals of the bare chip is formed on the periphery of the bare chip on the circuit board, and the terminals of the bare chip and the conductor pattern are electrically connected to each other by wire bonding like conductor wires. After such an electrical connection is made, a guard ring as a damping frame for damping the sealing resin is formed of the sealing resin in a range surrounding the conductor wire and the bare chip, and the hardening of the guard ring is awaited. Then, the inside is filled with a sealing resin, and the bare resin, the conductor wire and the conductor pattern in the peripheral portion thereof are sealed with the sealing resin.

【発明が解決しようとする課題】 ところで、このような半導体素子の樹脂封止に用いる
ガードリングは、封止樹脂を堰き止めるためのものであ
り、理想的には封止樹脂より流動性の低い樹脂が用いら
れる。作業性からみれば、ガードリングは即座に硬化す
ることが望ましく、狭い範囲で十分な高さを設定できる
封止樹脂が望まれている。 従来、ガードリングには、封止樹脂とは異なるチクソ
性の樹脂が用いられ、その調整が非常に面倒であった。 ガードリング用の樹脂を用いても、僅かに流動性が異
なる程度であって、ガードリングに最適な樹脂はなく、
十分な高さを取るためには単位面積当たりの滴下量が増
え、硬化の途上でその流動性故に拡がり、回路基板に対
する部品の実装効率を低下させる原因になっている。 そこで、この発明は、ガードリングを形成する封止樹
脂を加熱して硬化を早め、最適なガードリングを形成し
て効率的な樹脂封止を実現するとともに、ガードリング
を形成するための加熱処理の悪影響を回避した半導体封
止方法の提供を目的とする。
The guard ring used for resin sealing of such a semiconductor element is for blocking the sealing resin, and ideally has lower fluidity than the sealing resin. Resin is used. From the viewpoint of workability, it is desirable that the guard ring be cured immediately, and a sealing resin capable of setting a sufficient height in a narrow range is desired. Conventionally, a thixotropic resin different from the sealing resin is used for the guard ring, and its adjustment is very troublesome. Even if the resin for guard ring is used, the fluidity is slightly different, and there is no optimal resin for guard ring,
In order to obtain a sufficient height, the amount of dripping per unit area increases, and it spreads due to its fluidity during curing, which causes a reduction in mounting efficiency of components on a circuit board. Therefore, the present invention is to heat the sealing resin forming the guard ring to accelerate the curing, to form an optimal guard ring to realize efficient resin sealing, and to perform a heat treatment for forming the guard ring. It is an object of the present invention to provide a semiconductor encapsulation method that avoids the adverse effects of the above.

【課題を解決するための手段】[Means for Solving the Problems]

即ち、この発明の半導体封止方法は、半導体素子(ベ
アチップ4)が設置された回路基板(2)の前記半導体
の周囲部にガードリング(18)を形成し、その内部に封
止樹脂(16)を充填させて前記半導体を封止する半導体
封止方法において、前記回路基板の前記ガードリングを
形成すべき部分に前記封止樹脂を供給しながら、前記回
路基板に供給された前記封止樹脂を熱風(28)を吹きつ
けて熱硬化させるとともに、前記封止樹脂に吹きつけら
れた前記熱風を吸引することを特徴とする。
That is, according to the semiconductor sealing method of the present invention, a guard ring (18) is formed around the semiconductor on a circuit board (2) on which a semiconductor element (bare chip 4) is installed, and a sealing resin (16) is formed inside the guard ring (18). In the semiconductor sealing method of sealing the semiconductor by filling the sealing resin, the sealing resin supplied to the circuit board while supplying the sealing resin to a portion of the circuit board where the guard ring is to be formed. Is blown with hot air (28) to be thermally cured, and the hot air blown to the sealing resin is sucked.

【作用】[Action]

ガードリングを形成する封止樹脂を回路基板上で迅速
に加熱によって硬化させることができるので、その硬化
によって十分な高さを持つガードリングが少ない樹脂量
で形成される。また、ガードリングの硬化が迅速化さ
れ、しかも十分な強度が短時間で得られるので、ガード
リングの形成後、すぐに封止樹脂の充填を行うことがで
きる。 そして、ガードリングを形成すべき封止樹脂に吹きつ
けられた熱風は、ガードリング上より吸引され、ガート
リング以外の部分、特に、封止樹脂供給手段側の封止樹
脂への加熱が阻止され、封止樹脂の劣化が防止される。
Since the sealing resin forming the guard ring can be rapidly cured by heating on the circuit board, the curing allows the guard ring having a sufficient height to be formed with a small amount of resin. Further, since the hardening of the guard ring is accelerated and sufficient strength can be obtained in a short time, the sealing resin can be filled immediately after the formation of the guard ring. Then, the hot air blown to the sealing resin for forming the guard ring is sucked from above the guard ring, and the heating of the parts other than the gart ring, particularly, the sealing resin on the sealing resin supply means side is prevented. Thus, deterioration of the sealing resin is prevented.

【実 施 例】【Example】

以下、この発明を図面に示した実施英を参照して詳細
に説明する。 第1図及び第2図は、この発明の半導体封止方法の一
実施例を示す。 第1図及び第2図の(A)に示すように、アルミナや
セラミック等の絶縁性材料で回路基板2が形成され、そ
の回路基板2の表面には半導体素子としてのベアチップ
4を実装すべき部分に導体6が印刷によって形成されて
いるとともに、この導体6に一定の間隔を設けて導体パ
ターン8が形成されている。導体パターン8は、図示し
ない回路部品や他の機能回路との回路パターンを形成す
るものである。 導体6の上面には、第2図の(B)に示すように、ベ
アチップ4が導電性接着剤10を以て固着されるととも
に、ベアチップ4の半導体基板が導体6と電気的に接続
されている。ベアチップ4の縁部に形成されている電極
12と対応する導体パターン8との間にはワイヤボンディ
ングによって導体ワイヤ14が接続され、電気的に接続さ
れている。 そして、このベアチップ4並びに導体ワイヤ14が接続
された導体パターン8を包囲する範囲に封止樹脂16を以
てガードリング18が形成される。即ち、第1図に示すよ
うに、封止樹脂供給手段としてのシリンジ20が設置され
ており、その先端部には封止樹脂16をシリンジ20側の加
圧によって所定量だけ連続的に封止樹脂16を滴下するた
めのニードル22が取り付けられている。したがって、こ
のニードル22から回路基板2の上面に一筆書きの形態で
封止樹脂16が連続的に供給され、形成すべきガードリン
グ形状にニードル22を移動させると、その軌跡としてガ
ードリング18が封止樹脂16によって形成される。 このシリンジ20の近傍には、熱風源24に接続された熱
風供給管26が臨ませられ、その先端部はニードル22の近
傍、即ち、ニードル22から滴下直後の封止樹脂16上に向
けられている。したがって、回路基板2上に滴下された
封止樹脂16は、熱風供給管26から噴射された熱風28によ
って加熱され、熱硬化する。 また、この熱風供給管26には、熱風28を吸引する吸気
源30に接続された吸気管32が被せられている。吸気管32
は、熱風28の吸引範囲を拡げるためにその先端側に拡げ
られ、熱風28の吸引能力を高くするため、熱風供給管26
より内径を大きくした管が用いられ、吸気源30に接続さ
れている。即ち、熱風源24で生じた熱風28は熱風供給管
26を通して封止樹脂16上に供給された後、吸気源30から
の吸気圧で吸気管32に吸引されるので、加熱すべき封止
樹脂16を介して吸気源30から熱風源24に戻されるループ
が構成されており、熱風28が熱風源24と吸気源30との間
で対流している。 そして、熱風28を受けた封止樹脂16は、熱風28からの
熱エネルギで加熱され、その加熱により熱硬化して封止
樹脂16の流動が阻止され、第2図の(C)に示すよう
に、狭い範囲で十分な高さ及び強度を持つガードリング
18に形成される。 次に、このガードリング18の内部には、第2図の
(D)に示すように、シリンジ20のニードル22から封止
樹脂16が充填され、第2図の(E)に示すように、ベア
チップ4上に十分な厚みを持つ樹脂膜が形成されて樹脂
封止を完了する。 このような樹脂封止では、封止樹脂16の熱硬化を利用
して少ない封止樹脂16で十分な強度と高さを持つガード
リング18が形成され、その内部にガードリング18と同様
の封止樹脂16を以て封止が行われる。特に、熱硬化によ
って、ガードリング18を形成すべき封止樹脂16の流れ出
しが阻止できるので、シリンジ20の操作が容易でしか
も、精度の高いガードリング18が形成される。 この熱硬化に用いられる熱風28は、吸気管32から吸気
源30を通じて熱風源24側に戻されるので、封止樹脂供給
手段側のシリンジ20やニードル22の供給前の封止樹脂16
に当たることがなく、供給前の封止樹脂16の劣化が防止
される。したがって、ガードリング18の信頼性が高めら
れることになる。 実験によれば、封止樹脂16にエポキシ樹脂を用いた場
合、熱風源24からの熱風28によって封止樹脂16の表面温
度を150℃ないし200℃に上昇させることができ、これに
よって封止樹脂16を熱硬化させ、ベアチップ4を覆う封
止樹脂16の充填に十分な強度と高さを設定することがで
きた。
Hereinafter, the present invention will be described in detail with reference to the embodiments illustrated in the drawings. 1 and 2 show an embodiment of the semiconductor sealing method of the present invention. As shown in FIGS. 1 and 2A, a circuit board 2 is formed of an insulating material such as alumina or ceramic, and a bare chip 4 as a semiconductor element should be mounted on the surface of the circuit board 2. A conductor 6 is formed on the portion by printing, and a conductor pattern 8 is formed with a certain interval between the conductors 6. The conductor pattern 8 forms a circuit pattern with circuit components (not shown) and other functional circuits. As shown in FIG. 2B, the bare chip 4 is fixed to the upper surface of the conductor 6 with a conductive adhesive 10 and the semiconductor substrate of the bare chip 4 is electrically connected to the conductor 6. Electrodes formed on the edge of bare chip 4
A conductor wire 14 is connected between the conductor pattern 12 and the corresponding conductor pattern 8 by wire bonding, and is electrically connected. Then, a guard ring 18 is formed with a sealing resin 16 in an area surrounding the bare chip 4 and the conductor pattern 8 to which the conductor wires 14 are connected. That is, as shown in FIG. 1, a syringe 20 is provided as a sealing resin supply means, and the sealing resin 16 is continuously sealed at a tip end thereof by a predetermined amount by pressing the syringe 20 side. A needle 22 for dropping the resin 16 is attached. Therefore, the sealing resin 16 is continuously supplied from the needles 22 to the upper surface of the circuit board 2 in a one-stroke form. It is formed by the stopper resin 16. In the vicinity of the syringe 20, a hot air supply pipe 26 connected to a hot air source 24 is exposed, and the distal end is directed to the vicinity of the needle 22, that is, the sealing resin 16 immediately after dripping from the needle 22. I have. Therefore, the sealing resin 16 dropped on the circuit board 2 is heated by the hot air 28 jetted from the hot air supply pipe 26 and thermally cured. Further, the hot air supply pipe 26 is covered with an intake pipe 32 connected to an intake source 30 that sucks the hot air 28. Intake pipe 32
The hot air supply pipe 26 is expanded toward the distal end thereof in order to expand the suction range of the hot air 28, and in order to increase the suction capacity of the hot air 28.
A tube having a larger inner diameter is used and connected to the intake source 30. That is, the hot air 28 generated by the hot air source 24 is
After being supplied onto the sealing resin 16 through 26, it is sucked into the suction pipe 32 by the suction pressure from the suction source 30, and thus returned from the suction source 30 to the hot air source 24 via the sealing resin 16 to be heated. A loop is formed, and hot air 28 convects between the hot air source 24 and the intake source 30. Then, the sealing resin 16 which has received the hot air 28 is heated by the heat energy from the hot air 28, and is thermally cured by the heating to prevent the flow of the sealing resin 16 as shown in FIG. 2 (C). Guard ring with sufficient height and strength in a narrow range
Formed on 18. Next, the inside of the guard ring 18 is filled with the sealing resin 16 from the needle 22 of the syringe 20 as shown in FIG. 2D, and as shown in FIG. A resin film having a sufficient thickness is formed on the bare chip 4 to complete the resin sealing. In such resin sealing, a guard ring 18 having sufficient strength and height is formed with a small amount of the sealing resin 16 by utilizing the thermosetting of the sealing resin 16, and a sealing ring similar to the guard ring 18 is formed therein. Sealing is performed with the sealing resin 16. In particular, since the sealing resin 16 on which the guard ring 18 is to be formed can be prevented from flowing out by thermosetting, the operation of the syringe 20 is easy and the guard ring 18 with high accuracy is formed. Since the hot air 28 used for this thermosetting is returned from the suction pipe 32 to the hot air source 24 through the suction source 30, the sealing resin 16 before the supply of the syringe 20 and the needle 22 on the sealing resin supply means side is used.
Therefore, the deterioration of the sealing resin 16 before the supply is prevented. Therefore, the reliability of the guard ring 18 is improved. According to the experiment, when epoxy resin is used as the sealing resin 16, the surface temperature of the sealing resin 16 can be raised to 150 ° C. to 200 ° C. by the hot air 28 from the hot air source 24. 16 was thermally cured, and the strength and height sufficient to fill the sealing resin 16 covering the bare chip 4 could be set.

【発明の効果】【The invention's effect】

以上説明したように、この発明によれば、次の効果が
得られる。 (a) 封止樹脂に熱風を吹きつけ、その熱風により封
止樹脂を熱硬化させてガードリングを形成するので、ガ
ードリングの形成時間が短く、しかもガードリングを即
座に封止樹脂を充填できる程度の強度に硬化させること
ができ、ガードリングの形成及びその内部への封止樹脂
の充填を同一工程で行うことができ、製造時間を短縮で
き、製造コストの低減を図ることができる。 (b) ガードリングを形成すべき封止樹脂を熱硬化に
より硬化速度を速めることができ、理想的なガードリン
グが形成できるので、ガードリングを形成する封止樹脂
とガードリングの内部に充填すべき封止樹脂に同一のも
のを使用でき、特別な封止樹脂を用いる必要がないた
め、材料面からも製造コストの低減が図られる。 (c) ガードリングを形成すべき封止樹脂の流動性に
よる回路基板面への必要以上の拡がりを防止でき、回路
基板の高密度実装に寄与することができる。 (d) ガードリングを形成すべき封止樹脂に当てられ
た熱風を吸引して廃棄させるので、封止樹脂から跳ね返
った熱風による封止樹脂供給手段側への封止樹脂の加熱
が防止できるとともに、回路基板に供給される前の封止
樹脂を熱風による熱的劣化から防護でき、ガードリング
の品質、信頼性を高めることができる。
As described above, according to the present invention, the following effects can be obtained. (A) Hot air is blown onto the sealing resin, and the sealing resin is thermally cured by the hot air to form the guard ring. Therefore, the time for forming the guard ring is short, and the guard ring can be filled with the sealing resin immediately. The hardening can be performed to a sufficient degree, the formation of the guard ring and the filling of the inside thereof with the sealing resin can be performed in the same step, so that the manufacturing time can be reduced and the manufacturing cost can be reduced. (B) Since the curing speed of the sealing resin for forming the guard ring can be increased by thermosetting and an ideal guard ring can be formed, the sealing resin for forming the guard ring and the inside of the guard ring are filled. The same sealing resin to be used can be used, and there is no need to use a special sealing resin. Therefore, the manufacturing cost can be reduced from the viewpoint of materials. (C) Unnecessary spreading to the circuit board surface due to the fluidity of the sealing resin for forming the guard ring can be prevented, which can contribute to high-density mounting of the circuit board. (D) Since the hot air applied to the sealing resin for forming the guard ring is sucked and discarded, the heating of the sealing resin to the sealing resin supply means side by the hot air rebounding from the sealing resin can be prevented, and Also, the sealing resin before being supplied to the circuit board can be protected from thermal deterioration due to hot air, and the quality and reliability of the guard ring can be improved.

【図面の簡単な説明】[Brief description of the drawings]

第1図はこの発明の半導体封止方法の一実施例を示す
図、 第2図はこの発明の半導体封止方法の一実施例を示す断
面図である。 2……回路基板 4……ベアチップ(半導体素子) 16……封止樹脂 18……ガードリング 28……熱風
FIG. 1 is a view showing one embodiment of the semiconductor sealing method of the present invention, and FIG. 2 is a sectional view showing one embodiment of the semiconductor sealing method of the present invention. 2 Circuit board 4 Bare chip (semiconductor element) 16 Sealing resin 18 Guard ring 28 Hot air

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】半導体が設置された回路基板の前記半導体
の周囲部にガードリングを形成し、その内部に封止樹脂
を充填させて前記半導体を封止する半導体封止方法にお
いて、 前記回路基板の前記ガードリングを形成すべき部分に前
記封止樹脂を供給しながら、前記回路基板に供給された
前記封止樹脂を熱風を吹きつけて熱硬化させるととも
に、前記封止樹脂に吹きつけられた前記熱風を吸引する
ことを特徴とする半導体封止方法。
1. A semiconductor sealing method for sealing a semiconductor by forming a guard ring around the semiconductor on a circuit board on which the semiconductor is mounted, and filling the inside with a sealing resin. While supplying the sealing resin to the portion where the guard ring is to be formed, the sealing resin supplied to the circuit board was blown with hot air to be thermally cured, and was blown to the sealing resin. A semiconductor sealing method, wherein the hot air is sucked.
JP29299590A 1990-10-30 1990-10-30 Semiconductor sealing method Expired - Fee Related JP2862662B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29299590A JP2862662B2 (en) 1990-10-30 1990-10-30 Semiconductor sealing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29299590A JP2862662B2 (en) 1990-10-30 1990-10-30 Semiconductor sealing method

Publications (2)

Publication Number Publication Date
JPH04165632A JPH04165632A (en) 1992-06-11
JP2862662B2 true JP2862662B2 (en) 1999-03-03

Family

ID=17789115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29299590A Expired - Fee Related JP2862662B2 (en) 1990-10-30 1990-10-30 Semiconductor sealing method

Country Status (1)

Country Link
JP (1) JP2862662B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6060857B2 (en) * 2013-08-26 2017-01-18 豊田合成株式会社 Manufacturing method of LED lamp and unevenness imparting device for sealing resin

Also Published As

Publication number Publication date
JPH04165632A (en) 1992-06-11

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