JP2933779B2 - Transmission system - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to, for example, MOS (Metal
Oxide Semiconductor) type optical power and / or
Or, it relates to a signal transmission system.

[0002]

2. Description of the Related Art FIG. 12 shows a general configuration of a driving circuit for a MOS integrated circuit device based on the prior art. As shown in FIG. 12, normally, in order to drive a MOS integrated circuit element, a configuration in which the MOS integrated circuit element is directly connected to a power supply line wiring Vcc is employed. Are provided with dedicated wiring. Generally, electronic circuit components such as MOS integrated circuit elements and wiring are mounted on a dedicated electronic circuit board.

In order to increase the complexity and performance of devices equipped with such MOS integrated circuit elements, the density, speed, reliability and signal noise of signal transmission wiring must be reduced. Is desired.

[0004] In order to meet the above-mentioned demand for wiring for signal transmission, an optical signal is transmitted in a transparent flat plate, the optical signal is received at a necessary place, and the optical signal is converted into an electric signal by a photoelectric conversion element. , That is, a method based on the concept of the optical bus has been actively proposed.

FIGS. 13, 14 and 15 show typical examples of elements based on the concept of the optical bus.

FIG. 13 is a schematic diagram of an optical bus (1991).
Nikkei Sangyo Shimbun on November 22, 2008). In this optical bus, a large number of concave lenses 102 each having a recess of 2 mm in diameter are formed at appropriate positions on the surface of a glass substrate 101 serving as a flat optical waveguide.
On the surface of the glass substrate 101, a board 105 is formed in which a light source 103 and a light receiving element 104 are paired and fitted so as to overlap the concave lens 102, and a processor 106 is formed on the board 105. The concave lens 102 functions as a light entrance / exit, and one light source 103
The light emitted from the glass substrate 10
1, travels while reflecting in the glass substrate 101, exits from the plurality of concave lenses 102, and
04 is configured to be detected.

FIG. 14 is a conceptual diagram of planar type optical integration (November 22, 1991, IEICE Integrated Photonics Research Group material). As shown in FIG. 14, this optical integrated system has GaAs on one surface of a transparent substrate 111.
An optical element such as a light emitting element 112 composed of an s element, a photodetector 113, a lens 114, and a mirror 115 are provided, and a mirror 116 is formed on the other surface of the transparent substrate 111. In the optical integrated system having the above-described structure, light emitted from the light emitting element 112 is transmitted to the transparent substrate 1.
The light is propagated in a zigzag manner while being reflected inside the light 11, and is modulated by an optical element such as a lens 114 and a mirror 115 on the way to reach the photodetector 113.

FIG. 15 is a side view showing an optical pickup mounted on a compact disc player in the wavelength range of a semiconductor laser (Japanese Patent Publication No. Sho 62-11715).
No. 0). In this optical pickup, a reflection mirror 122 and a diffraction grating 123 are formed on two opposing surfaces of a flat transparent substrate 121, and the inside of the transparent substrate 121 is indicated by a hatched portion in FIG. An optical path through which the light reflected by the reflection mirror 122 travels is formed. Further, a light emitting element 12 made of a semiconductor laser is provided at a position corresponding to the optical path on the two opposite surfaces of the transparent substrate 121.
4. Optical elements such as a light receiving element 125 and a lens 126 are arranged. On the transparent substrate 121, there is provided a light projecting unit 128 for transmitting and receiving light having passed through the optical path to and from a compact disk 127 as a recording medium.

In the optical pickup having the above-described structure, the light emitted from the light emitting element 124 is
1 and a reflection mirror 122 and a diffraction grating 129
Irradiates the compact disk 127, and the reflected light from the compact disk 127 is reflected by the reflection mirror 122, the diffraction grating 123 and the lens 126, and detected by the light receiving element 125.

The above three examples are typical examples of utilizing the light guide substrate. What is common to all the above examples is that the optical signal is propagated inside the light guide substrate, and that several types of electronic components and optical elements are integrated on two opposing surfaces of the light guide substrate. And aiming at miniaturization through integration.

[0011]

SUMMARY OF THE INVENTION The densification of various devices,
With miniaturization and high performance, electronic devices such as MOS integrated circuit elements are mounted on various devices. As a result, a large area is required for wiring for power supply lines of electronic circuit components, which hinders high-density mounting on electronic circuit boards, and reduces noise caused by induction in electric wiring. There is a problem.

Regarding the problem of noise, proposals have been made for making the signal transmission wiring optical wiring by using an optical guide board as described above, and various studies have been made.
Noise and crosstalk generated in signal transmission wiring are being improved.

No effective proposal has been made regarding the problem of wiring for the power supply line, which hinders further high-density mounting. Noise and crosstalk due to power supply line wiring are not improved.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to provide a transmission system that enables high-density and low-noise electronic circuit components in various devices.

[0015]

SUMMARY OF THE INVENTION A transmission system according to the present invention includes a light source for emitting light for generating an electromotive force, a light guide unit for guiding light for generating an electromotive force from the light source, and a light guide unit. A photovoltaic element that generates light by receiving light for generating electromotive force from the light source, and when formed adjacent to the photovoltaic element.
Both are connected to the photovoltaic element and supplied from the photovoltaic element.
And an integrated circuit element which is driven by the sheet is electromotive force, and the light source, a light guide portion, and the photovoltaic element, the
The integrated circuit element and the integrated circuit element are formed integrally, thereby achieving the above object.

[0016] The photovoltaic element and the integrated circuit element may be mounted on an electronic circuit board.

The photovoltaic element and the integrated circuit element are mounted on an electronic circuit board, and an opening through which light for generating photovoltaic light applied to the photovoltaic element passes is provided in the electronic circuit board. You may.

[0018] The light guide portion may be formed of a light guide substrate, and the light guide substrate may be provided with means for irradiating the photovoltaic element with light for generating an electromotive force guided through the light guide substrate.

[0019] A reflection film is provided on the light guide substrate to prevent radiation of the light guided through the light guide substrate, excluding the light applied to the photovoltaic element, to the outside of the light guide substrate. May be.

Further, the transmission system of the present invention comprises a light source for emitting light for an input signal, a light guide for guiding the light for the input signal from the light source, and an input from the light source via the light guide. a narrow wavelength band photovoltaic element which converts any electric signal by receiving light for signal, adjacent to the narrow wavelength range photovoltaic element
Formed and connected to the narrow wavelength band photovoltaic element ,
An integrated circuit element to which an arbitrary electric signal from the narrow wavelength band photovoltaic element is input , the light source, and the light guide unit
And the narrow wavelength band photovoltaic element and the integrated circuit element
It is formed in the body, thereby achieving the above objectives.

A plurality of the light sources and the narrow-wavelength photovoltaic elements are provided. The light sources emit light with different wavelengths for each light source, and each light is received by another narrow-wavelength band photovoltaic element. You may.

[0022] The narrow wavelength band photovoltaic element and the integrated circuit element may be mounted on an electronic circuit board.

The narrow-wavelength band photovoltaic element and the integrated circuit element are mounted on an electronic circuit board, and an opening through which light for an input signal applied to the narrow-wavelength band photovoltaic element passes is provided on the electronic circuit board. May be provided.

The light guide section may be composed of a light guide substrate, and the light guide substrate may be provided with means for irradiating the narrow wavelength band photovoltaic element with light for an input signal guided through the light guide substrate. Good.

The light guide substrate is provided with a reflection film for preventing radiation of the light guided to the light guide substrate except for the light irradiated to the narrow wavelength band photovoltaic element to the outside of the light guide substrate. It may be attached to.

Furthermore, the transmission system of the present invention includes a first light source that emits light for electromotive force, and a second light source emitting light of the input signal, for the electromotive force generated from the first light source a light guide portion for guiding the light for the input signal from the light and said second light source, photoelectromotive the electromotive receives light for the electromotive force generated from the first light source through the light guide portion A power element, a narrow wavelength band photovoltaic element that receives light for an input signal from the second light source and converts the light into an arbitrary electric signal, the photovoltaic element and the narrow wavelength band photovoltaic element. The light is formed adjacent to the light
Connected to the electromotive element and the narrow wavelength band photovoltaic element, driven by receiving the electromotive force supplied from the photovoltaic element ,
And an integrated circuit element to which an arbitrary electric signal from the narrow wavelength band photovoltaic element is input , wherein the first light source and the second
2, the light guide section, the photovoltaic element, and the narrow light source.
Wavelength band photovoltaic element and the integrated circuit element are integrally formed
Are, the objects can be achieved.

A plurality of the second light sources and the plurality of narrow wavelength band photovoltaic elements are provided, and the second light sources emit light with different wavelengths for the respective second light sources. The light may be received by the wavelength region photovoltaic element.

The photovoltaic element, the narrow wavelength band photovoltaic element, and the integrated circuit element may be mounted on an electronic circuit board.

The photovoltaic element, the narrow-wavelength-range photovoltaic element, and the integrated circuit element are mounted on an electronic circuit board, and the photovoltaic element irradiates the photovoltaic element with light for generating photovoltaic power. The electronic circuit board may be provided with an opening through which light for an input signal applied to the narrow wavelength band photovoltaic element passes.

The light guide section includes a light guide substrate, and means for irradiating the photovoltaic element with light for generating an electromotive force guided through the light guide substrate, and converting the light for an input signal into the light having a narrow wavelength range. Means for irradiating the electromotive element may be provided on the light guide substrate.

A reflection for preventing radiation of the light guided through the light guide substrate excluding the light applied to the photovoltaic element and the narrow wavelength band photovoltaic element to the outside of the light guide substrate. A film may be provided on the light guide substrate.

The photovoltaic element is provided between the p-electrode and the n-electrode, and the p-type semiconductor layer and the n-type semiconductor layer are separated from each other. A plurality of sets of semiconductor layers form the p-type semiconductor layer of each set of semiconductor layers on the side of the p-electrode, and the area of a junction between the p-type semiconductor layer and the n-type semiconductor layer is defined as p. A stacked body in which the set closer to the electrode is larger than the set farther from the p-electrode, and each n-type semiconductor layer formed on the outer surface of the stacked body and adjacent to the corresponding n-type semiconductor layer. And a short-circuit electrode for short-circuiting to another set of matching p-type semiconductor layers.

The narrow wavelength band photovoltaic element is provided between the p-electrode and the n-electrode, and the p-electrode and the n-electrode are spaced apart from each other. And a plurality of sets of semiconductor layers, each of which forms the p-type semiconductor layer of the set of semiconductor layers on the side of the p-electrode, and an area of a junction between the p-type semiconductor layer and the n-type semiconductor layer. And a stacked body in which the set closer to the p-electrode is larger than the set far from the p-electrode, and each n-type semiconductor layer formed on the outer surface of the stacked body,
A short-circuiting electrode for short-circuiting to another set of p-type semiconductor layers adjacent to the corresponding n-type semiconductor layer, and a filter provided over the laminated body on which the short-circuiting electrode is formed, and transmitting light for an input signal. And an optical multilayer film functioning as

[0034]

In the transmission system according to the present invention, the electromotive force generated by the photovoltaic element is used as a power source for the integrated circuit element. Therefore, the optical power is transmitted to the photovoltaic element using an optical guide substrate or the like instead of the electric wiring. Transmit.

As for the signal input to the integrated circuit element, the optical signal guided inside the light guide section by the narrow wavelength band photovoltaic element for detecting only the light ray of the specific wavelength band by the action of the optical multilayer film is used. The signal is converted into an electric signal and input to the integrated circuit element.

Further, by simultaneously providing the photovoltaic element and the narrow wavelength band photovoltaic element, the power supply and the input signal of the integrated circuit element are transmitted simultaneously.

[0037]

Embodiments of the present invention will be described below.

<First Embodiment> FIG. 1 is a schematic diagram of an optical power transmission system according to the present embodiment.

In this optical power transmission system, a light source 2 is provided at one end of a transparent light guide board 1 and an electronic circuit board 3
Are laminated on the light guide substrate 1. Electronic circuit components 4 are mounted on the electronic circuit board 3.

The light guide substrate 1 has a reflection film 1a at the interface with the electronic circuit board 3, and the reflection film 1a covers the inside of the light guide substrate 1 in accordance with the mounting position of the electronic circuit component 4. An aperture 1b is provided to extract the propagating light. On the surface opposite to the electronic circuit board 3, a Fresnel mirror 1c is integrally formed so that light is focused on the opening 1b.

The electronic circuit board 3 is mounted such that the light extracted from the opening 1b reaches the electronic circuit component 4 mounted thereon.
An opening 3a is set to match the opening 1b of the light guide substrate 1.

FIG. 2A shows the appearance of the electronic circuit component 4.
(B). 2A is a perspective view of the electronic circuit component 4, and FIG. 2B is a plan view of the electronic circuit component 4 as viewed from the electronic circuit board 3 side.

As shown in FIG. 1, the electronic circuit component 4 includes a low power consumption type integrated circuit element 4b such as a MOS type integrated circuit element and a photovoltaic element in a package 4a shown in FIG. 4c are formed adjacent to each other. The package 4a is molded with resin or the like in the same manner as a normal integrated circuit package, and has lead pins 4d as shown in the figure. As shown in FIG. 2B, a window 4 made of a protective glass or the like is provided on a part of the package 4a.
The photovoltaic element 4c is mounted at the position where the window 4e is formed. The electronic circuit component 4 is attached to the electronic circuit board 3 by soldering lead pins 4d with the window 4e aligned with the openings 1b and 3a. However, the optical axis of the photovoltaic element 4c is made to coincide with the optical axis of the Fresnel mirror 1c.

FIG. 3A shows a top view of the photovoltaic element 4c used in this embodiment, and FIG. 3B shows a sectional view thereof.

As shown, the photovoltaic element 4c has a first p-type semiconductor layer 12, a first n-type
Semiconductor layer 13, second p-type semiconductor layer 14, second n-type semiconductor layer 15, third p-type semiconductor layer 16, third n-type semiconductor layer 17, fourth p-type semiconductor layer 18, and The fourth n-type semiconductor layer 19 is formed in this order, and the area thereof is gradually reduced in this order. Further, an n-electrode 20 is formed on the fourth n-type semiconductor layer 19. The first n-type semiconductor layer 13 and the second p-type semiconductor layer 14 are connected to the short-circuit electrode 2
1, the second n-type semiconductor layer 15 and the third p-type semiconductor layer 16 are short-circuited by the short-circuit electrode 22, and the third
The n-type semiconductor layer 17 and the fourth p-type semiconductor layer 18 are short-circuited by the short-circuit electrode 23.

A method for manufacturing the photovoltaic element 4c as described above will be described.

First, a first p having a thickness of 200 to 400 μm
A first n-type semiconductor layer 13 having a thickness of 10 to 100 μm is epitaxially grown on the surface of the type semiconductor layer 12. A second p-type semiconductor layer having a thickness of 10 to 100 μm is formed on the first n-type semiconductor layer 13.
The type semiconductor layer 14 is epitaxially grown. Further, on the second p-type semiconductor layer 14, a second n-type semiconductor layer 15 having a thickness of 10 to 100 μm, a third p-type semiconductor layer 16 having a thickness of 10 to 100 μm, and a third p-type semiconductor layer 16 having a thickness of 10 to 100 μm are provided. The third n-type semiconductor layer 17, the fourth p-type semiconductor layer 18 having a thickness of 10 to 100 μm, and the fourth n-type semiconductor layer 19 having a thickness of 10 to 100 μm are sequentially epitaxially grown.

Next, the fourth p
The type semiconductor layer 18 and the fourth n-type semiconductor layer 19 are mesa-etched so that the side surfaces are inclined as shown in FIG. Subsequently, the third p-type semiconductor layer 16 and the third n-type semiconductor layer 17, the second p-type semiconductor layer 14 and the second n-type semiconductor layer 15, the first p-type semiconductor layer 12, and the first Is performed in the order of the n-type semiconductor layer 13.

Finally, a metal is deposited by vapor deposition on the entire surface of the stacked body composed of the semiconductor layers in this state, and the p-electrode 11, the n-electrode 20, and the short-circuit electrode 2 are formed by photo-etching.
Ohmic electrodes are formed by patterning 1, 22, and 23 and performing heat treatment.

The conventional photovoltaic element described later is formed by a dielectric isolation method, and can be manufactured by a relatively easy technique.

The photovoltaic element 4c manufactured as described above includes a junction between the first p-type semiconductor layer 12 and the first n-type semiconductor layer 13, a second p-type semiconductor layer 14 and the second 2, the junction between the third p-type semiconductor layer 16 and the third n-type semiconductor layer 17, and the fourth p-type semiconductor layer 18 and the fourth n-type semiconductor layer. 4 sets of p at the junction with 19
-Has an n-junction.

The principle of obtaining an electromotive force in the photovoltaic element 4c having such a structure will be described with reference to FIGS. 4 (a) and 4 (b). Note that this photovoltaic element 4c has
For the reason that the photocurrents generated at the junctions are made uniform, the light receiving areas are set so that the light receiving amounts of the light receiving regions of the four sets of pn junctions respectively match.

FIG. 4A shows an energy band structure when the photovoltaic element 4c is not irradiated with light, and FIG. 4B shows an energy band structure when the light is irradiated. Show.

When the photovoltaic element 4c is not irradiated with light, no photovoltaic power is generated because the Fermi level is completely uniform as shown by the dashed line in FIG. 4A.

On the other hand, when the photovoltaic element 4c is irradiated with light, as shown by a dashed line in FIG. The position changes by eVp. Between the first n-type semiconductor layer 13 and the second p-type semiconductor layer 14, the second n-type semiconductor layer 1
5 and the third p-type semiconductor layer 16 and between the third n-type semiconductor layer 17 and the fourth p-type semiconductor layer 18 are short-circuited by short-circuiting electrodes 21, 22, and 23, respectively. So
The first n-type semiconductor layer 13 and the second p-type semiconductor layer 14, the second n-type semiconductor layer 15 and the third p-type semiconductor layer 16, and the third n-type semiconductor layer 17 and the fourth p-type The type semiconductor layer 18 has the same potential. Therefore, in this embodiment, since four sets of pn junctions are formed in the photovoltaic element 4c,
It can be seen that an output voltage of (4 × Vp) is obtained.

In order to generate a larger photovoltaic power, it is desirable to select a material having a high quantum efficiency with respect to the wavelength of the irradiated light beam as the material of the semiconductor forming each layer. It is desirable that the light source 2 emit light having a relatively wide wavelength band and a high intensity, such as a halogen lamp.

The photovoltaic element 4c of this embodiment has four sets of p
-Although the structure has an n-junction, a structure having more pn-junctions may be used.

The operation in the optical power transmission system having the above configuration will be described with reference to the configuration diagram shown in FIG.

Light emitted from the light source 2 is confined inside the light guide substrate 1 and propagated. The propagated light beam is reflected by the Fresnel lens 1c and is extracted from the opening 1b of the light guide substrate 1. The extracted light beam passes through the opening 3a of the electronic circuit board 3 and the window 4e of the electronic circuit component 4, and irradiates the photovoltaic element 4c mounted on the electronic circuit component 4.

In the photovoltaic element 4c irradiated with the light beam, photovoltaic power is generated as described above. The photovoltaic power is used as a power source to directly drive the low power consumption type integrated circuit element 4b such as a MOS type integrated circuit element. At this time, FIG.
When a capacitor 4f having an appropriate capacity is formed in parallel with the photovoltaic element 4c as shown in FIG. 2B, the stability of the power supply of the integrated circuit element 4b can be obtained.

In the optical power transmission system of the present embodiment, the power supply of the integrated circuit element 4b is transmitted using the light guide substrate 1 as optical power instead of electric wiring.
Therefore, the electric wiring only needs to be connected to the integrated circuit element 4b and the photovoltaic element 4c, so that it can be extremely short. As a result, since the mounting density of various electronic components on the electronic circuit board 3 can be increased, the size of the device can be reduced, and the noise due to induction in the power supply wiring can be reduced, thereby achieving high reliability of the device. I can do it.

The photovoltaic element 4c used in the present embodiment, which can obtain a large photovoltaic power, is a conventional photovoltaic element (electron element) having a pn junction series configuration shown in FIG. Materials, September 1987, pp. 78-84, photovoltaic coupler using silicon direct bonding technology and its application) can also be used.

As shown in the drawing, this conventional photovoltaic element has a p-type substrate on one side of a substrate 131 made of polysilicon.
Type semiconductor layer 132a and the n-type semiconductor layer a plurality of p · n junction 132 132b consisting of are formed respectively SiO ₂ film 1
33, adjacent pn junctions 13
Al wiring 134 is formed so that 2 are connected in series.

However, since it has such a structure,
The element is larger than the vertical stacked photovoltaic element 4c used in this embodiment. Also, when used as a light receiver as in the present embodiment, it is necessary to irradiate the light over the entire spread surface of the pn junction 132, so it is necessary to pay attention to the uniformity of the illuminance.

<Second Embodiment> FIG. 7 is a schematic diagram showing an optical power and signal transmission system according to this embodiment. Parts having the same functions as those of the optical power and signal transmission system shown in FIG. 1 are denoted by the same reference numerals as those in FIG.

In this optical power and signal transmission system, a power light source 2 a and a signal light source 2 b are provided at one end of a transparent light guide substrate 1, and an electronic circuit board 3 is laminated on the light guide substrate 1. Electronic circuit components 4 are mounted on the electronic circuit board 3.

The light guide substrate 1 and the electronic circuit substrate 3 are the first
The configuration is the same as that of the embodiment. As the power light source 2a, a light source having a relatively wide wavelength band and a high intensity is used.
It is desirable to use a signal light source 2b having a relatively narrow wavelength band.

The electronic circuit component 4 is the same as in the first embodiment.
An integrated circuit device 4b, a photovoltaic device 4c, and a narrow wavelength band photovoltaic device 4 are provided in a package 4a having a window 4e.
g are formed adjacent to each other. An opening 3a is formed in the electronic circuit board 3 so as to coincide with the window 4e, and light beams from the power light source 2a and the signal light source 2b irradiate the photovoltaic element 4c and the narrow wavelength band photovoltaic element 4g. It is supposed to be. The photovoltaic element 4c has the structure shown in FIG. 3 as in the first embodiment.

FIG. 8 shows the photovoltaic element 4 in the narrow wavelength region according to the present embodiment.
g shows a sectional view. Parts having the same functions as those of the photovoltaic element 4c shown in FIG. 3 are denoted by the same reference numerals as those in FIG.

The narrow wavelength band photovoltaic element 4g has a light receiving region at the pn junction of the surface on the n-electrode 20 side of the photovoltaic element having the same structure as the photovoltaic element 4c of the first embodiment. , An optical multilayer film 24 functioning as a filter is formed. The optical multilayer film 24 is formed by laminating a plurality of films so as to transmit only light in a specific wavelength range. By changing the type of the film to be laminated, the light transmission region characteristics of the optical multilayer film 24 can be changed.

Since the narrow wavelength band photovoltaic element 4g of this embodiment has the above-described structure, the narrow wavelength band photovoltaic element can be arbitrarily set within the light absorption range of the semiconductor used as the material. The sensitivity wavelength of the power element 4g can be adjusted.

In this embodiment, since the narrow wavelength band photovoltaic element 4g is for handling, for example, a clock signal, the light from the power light source 2a coexisting in the light guide substrate 1 and the signal from the signal light source 2b It is necessary to carry out detection by separating the wavelength of the light beam from that of the light beam. Therefore, the optical multilayer film 24 of the narrow wavelength band photovoltaic element 4g shown in FIG. 8 is adjusted so that its sensitivity wavelength matches the wavelength band of the signal light source 2b.

The operation of the optical power and signal transmission system having the above configuration will be described with reference to the configuration diagram shown in FIG.

The power light source 2a emits light for driving the integrated circuit element 4b, similarly to the light source 2 of the first embodiment. On the other hand, the signal light source 2b is driven at a clock frequency, for example. Light beams emitted from the power light source 2a and the signal light source 2b are confined inside the light guide substrate 1 and propagated. The propagated light beam is Fresnel lens 1c
And is extracted from the opening 1b of the light guide substrate 1. The extracted light beam passes through the opening 3a of the electronic circuit board 3 and the window 4e of the electronic circuit component 4, and is transmitted to the photovoltaic device 4c and the narrow wavelength band photovoltaic device 4g mounted on the electronic circuit component 4. Irradiated.

In the photovoltaic element 4c, a photovoltaic power is generated as in the first embodiment, and the integrated circuit element 4b is directly driven by using the photovoltaic power as a power source. At this time, FIG.
When a capacitor 4f having an appropriate capacity is formed in parallel with the photovoltaic element 4c as shown in FIG. 2B, the stability of the power supply of the integrated circuit element 4b can be obtained.

In the narrow wavelength band photovoltaic element 4g, as described above, only the light in the wavelength band of the signal light source 2b is detected by the optical multilayer film 24 and converted into an electric signal. In the present embodiment, this electric signal is a clock signal and is input to the integrated circuit element 4b as shown.

The narrow-wavelength photovoltaic element 4g can transmit not only a clock signal but also various signals by the same method.

In the optical power and signal transmission system of this embodiment, the power supply and the input signal of the integrated circuit
Instead of electrical wiring, the light is transmitted using the light guide substrate 1 as an optical power and an optical signal. Therefore, electric wiring can be significantly reduced as compared with the related art. As a result, by increasing the mounting density of various electronic components on the electronic circuit board 3, the size of the device can be reduced, and noise due to induction in the wiring for the power supply line and the wiring for the signal line can be reduced. Therefore, high reliability of the equipment can be achieved.

In this embodiment, the photovoltaic element 4c and the narrow wavelength band photovoltaic element 4g are simultaneously mounted on the electronic circuit board 3, but only the narrow wavelength band photovoltaic element 4g is mounted. Thus, it is also possible to provide a signal transmission system having a configuration in which only the input signal to the integrated circuit element 4b is optically wired. In this case, the power supply of the integrated circuit element 4b is based on electric wiring as in the conventional case, and the power light source 2a is unnecessary.

<Third Embodiment> This embodiment is an optical power and signal transmission system in which a power supply and a plurality of signals are optically wired.

This optical power and signal transmission system is the same as the optical power and signal transmission system of the second embodiment shown in FIG. 7 except that the number of signals transmitted through the signal light source 2b is equal to the number of signals transmitted. As many as the number of signals transmitted through the photovoltaic element 4g are arranged.

In this optical power and signal transmission system, the power supply for driving the integrated circuit element 4b is the first power supply.
The optical waveguide is formed by the optical guide substrate 1 and transmitted according to the same principle as that of the second embodiment. For the input signal to the integrated circuit element 4b, the light guide substrate 1 is modulated by modulating each signal light source 2b to transmit an optical signal according to the same principle as in the second embodiment.
And the optical signal is converted into an electric signal by the narrow wavelength band photovoltaic element 4g in which the optical multilayer film 24 is adjusted to correspond to the wavelength of the signal light source 2b. This electric signal is input to the integrated circuit element 4b.

In this embodiment, as the signal light source 2b,
In the case where a light emitting diode whose oscillation wavelength range has a certain width is used, the sensitivity wavelength is adjusted by changing the design of the optical multilayer film 24 of the narrow wavelength range photovoltaic element 4g on the light receiving side. Allows transmission of a plurality of signals. In this case, it is not necessary to change the design of the light emitting diode, and by assigning a part of the oscillation wavelength range to the sensitivity wavelength of each narrow wavelength region photovoltaic element 4b so as not to overlap, the same semiconductor of the same design Light emitting diodes made of materials can be used.

In the optical power and signal transmission system of the present embodiment, the power supply of the integrated circuit element 4b and a plurality of input signals are transmitted by using the optical guide substrate 1, so that the electric wiring is greatly increased as compared with the prior art. Can be reduced. As a result, downsizing and high reliability of the device can be achieved as in the first and second embodiments.

In this embodiment, the photovoltaic element 4c and the narrow-wavelength band photovoltaic element 4g are simultaneously mounted on the electronic circuit board 3. However, as in the second embodiment, the narrow-wavelength band light A signal transmission system may be provided by mounting only the electromotive element 4g. Also in this case, the power supply of the integrated circuit element 4b is based on electric wiring as in the conventional case, and the power light source 2a is not required.

In the first to third embodiments, the Fresnel lens 1c is used to extract the light beam propagating inside the light guide substrate 1. In addition, optical elements such as a reflection mirror and a grating are used. The same effects as in the above embodiment can be obtained by attaching the optical elements or by integrally forming the optical elements with the light guide substrate 1.

<Fourth Embodiment> FIG. 10 is a schematic diagram showing an optical power transmission system according to this embodiment. In this optical power transmission system, unlike the first to third embodiments, no light guide substrate is used.

In this optical power transmission system, a large number of electronic circuit components 4 are mounted on an electronic circuit board 3, and a light source is disposed opposite to the electronic circuit component 4 with the electronic circuit board 3 interposed therebetween. Many light emitting diodes are mounted as 2c. The electronic circuit component 4 is the same as in the first embodiment,
An integrated circuit element 4b and a photovoltaic element 4c are formed adjacent to each other in the package 4a in which the window 4e is formed. An opening 3a is formed in the electronic circuit board 3 so as to coincide with the window 4e, so that a light beam from the light source 2c can be taken into the electronic circuit component 4. Photovoltaic element 4
c has the structure shown in FIG. 3 as in the first embodiment.

In the optical power transmission system having the above-described structure, the light beam emitted from the light source 2c is applied to the photovoltaic element 4c and converted into photovoltaic power. This photovoltaic power directly affects the driving of the integrated circuit element 4b.

The optical power transmission system of the present embodiment can also greatly reduce the amount of electrical wiring, so that high-density mounting of various devices can be promoted, and noise due to induction in power supply wiring can be reduced. High reliability can be achieved.

In this embodiment, the light source 2c is formed on the opposite side of the electronic circuit component 4 with respect to the electronic circuit substrate 3, but the light source 2c is located on the same side of the electronic circuit substrate 3 as the electronic circuit component 4. You can distribute them. At this time, the window 4e formed in the package 4a is provided on the light source 2c side, and the opening 3a of the electronic circuit board 3 is not required.

<Fifth Embodiment> The signal transmission system of the present embodiment uses a narrow wavelength band photovoltaic element instead of the photovoltaic element 4c in the optical power transmission system of the fourth embodiment shown in FIG. .

By changing the wavelength of the light beam from the light source 2c for each light source 2c and selecting the setting of the optical multilayer film of the narrow wavelength band photovoltaic element in accordance with the wavelength, spatial multiplexing signal transmission becomes possible. Incidentally, one type of signal may be transmitted.

In the signal transmission system of this embodiment,
Since the input signal of the integrated circuit element 4b is transmitted spatially, electric wiring can be reduced as compared with the related art. As a result, effects similar to those of the other embodiments can be obtained.

By combining this embodiment with the fourth embodiment,
If the photovoltaic element 4c and the narrow-wavelength band photovoltaic element 4g are mounted on the electronic circuit component 4 to provide an optical power and signal transmission system, the electric wiring can be reduced more drastically.

<Sixth Embodiment> FIG. 11 is a schematic diagram of an optical power transmission system according to this embodiment.

In this optical power transmission system, a large number of electronic circuit components 4 are mounted on an electronic circuit board 3, and a light source is provided at an end opposite to the electronic circuit component 4 with the electronic circuit board 3 interposed therebetween. The reflection mirror 5 provided with 2 is provided oppositely. The reflection mirror 5 has a function of condensing light beams from the light source 2 in the direction of the electronic circuit board 3. Electronic circuit parts 4
As in the first embodiment, the integrated circuit element 4b and the photovoltaic element 4c are placed in the package 4a in which the window 4e is formed.
Are formed adjacent to each other. The electronic circuit board 3 has an opening 3
a is formed so as to coincide with the window 4e.
Can be taken into the electronic circuit component 4. The photovoltaic element 4c has the structure shown in FIG. 3 as in the first embodiment.

In the optical power transmission system having the above-described structure, the light beam emitted from the light source 2 is reflected by the reflection mirror 5 and is irradiated on the photovoltaic element 4c. The irradiated light beam is converted into photovoltaic power by the photovoltaic element 4c, and directly drives the integrated circuit element 4b.

According to the optical power transmission system of this embodiment, the electric wiring can be greatly reduced, and the same effects as those of the other embodiments can be obtained.

In this embodiment, the light source 2 is formed on the side opposite to the electronic circuit component 4 with the electronic circuit board 3 interposed therebetween.
Similarly to the fifth embodiment, the light source 2 may be arranged on the same side of the electronic circuit board 3 as the electronic circuit component 4. Also at this time, the window 4e formed in the package 4a is provided on the light source 2 side, and the opening 3a of the electronic circuit board 3 is unnecessary.

In this embodiment, a signal transmission system can be configured by using the light source 2 as a signal light source and the photovoltaic element 4c as a narrow wavelength band photovoltaic element 4g.
Further, as in the second embodiment, the power source 2a is used as the light source 2.
And a signal light source 2b, and a photovoltaic element 4c and a narrow-wavelength band photovoltaic element 4g are mounted on the electronic circuit component 4, whereby an optical power and signal transmission system can be configured.

In the first to sixth embodiments, the photovoltaic element 4c has a structure integrally formed with the integrated circuit element 4b. However, only the photovoltaic element 4c is molded alone and Alternatively, a configuration in which the integrated circuit elements 4b are formed in a stacked shape may be used.

[0103]

As is apparent from the above description, according to the transmission system of the present invention, it is possible to increase the mounting density of various electronic components with a relatively easy technique, and to reduce the size of the device. it can. Further, by reducing noise and crosstalk caused by induction in electric wiring, high reliability of the device can be achieved.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of an optical power transmission system according to a first embodiment.

FIG. 2 is a diagram illustrating an appearance of an electronic circuit component in the optical power transmission system illustrated in FIG.

3A is a plan view of a photovoltaic device in the optical power transmission system shown in FIG. 1, and FIG. 3B is a cross-sectional view of the photovoltaic device.

4A is a diagram showing an energy band structure in a state where light is not irradiated on the photovoltaic device shown in FIG. 3, and FIG.
(B) is a diagram showing an energy band structure in a state where light is irradiated.

5A is an equivalent circuit diagram of an electronic circuit component of the optical power transmission system shown in FIG. 1, and FIG. 5B is an equivalent circuit diagram of an electronic circuit component in an application example thereof.

FIG. 6 is a sectional view of a conventional photovoltaic element.

FIG. 7 is a schematic diagram of an optical power and signal transmission system according to a second embodiment.

8 is a cross-sectional view of a narrow wavelength band photovoltaic element in the optical power and signal transmission system shown in FIG.

9A is an equivalent circuit diagram of an electronic circuit component of the optical power and signal transmission system shown in FIG. 7, and FIG. 9B is an equivalent circuit diagram of an electronic circuit component in an application example thereof.

FIG. 10 is a schematic diagram of an optical power transmission system according to a fourth embodiment.

FIG. 11 is a schematic diagram of an optical power transmission system according to a sixth embodiment.

FIG. 12 is a diagram showing a general configuration of a driving circuit of a conventional MOS integrated circuit device.

FIG. 13 is a sectional view of a conventional optical bus.

FIG. 14 is a conceptual diagram of a conventional planar optical integration.

FIG. 15 is a schematic view of a conventional optical pickup.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 optical guide substrate 1 a reflective film 1 b aperture 1 c Fresnel lens 2 light source 2 a power supply 2 b signal power supply 3 electronic circuit board 3 a aperture 4 electronic circuit component 4 a package 4 b integrated circuit element 4 c photovoltaic element 4 d lead pin 4 f capacitor 4 g narrow wavelength light Electromotive element 5 Reflecting mirror 11 P-electrode 12, 14, 16, 18 P-type semiconductor layer 13, 15, 17, 19 N-type semiconductor layer 20 N-electrode 21, 22, 23 Short-circuit electrode 24 Optical multilayer film

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-55-4199 (JP, A) JP-A-57-24832 (JP, A) JP-A-58-68196 (JP, A) 68197 (JP, A) JP-A-61-98130 (JP, A) JP-A-62-117150 (JP, A) JP-A-4-241004 (JP, A) (58) Fields investigated (Int. ⁶ , DB name) H01L 27/04 H01L 27/15 H01L 31/04 H02J 17/00 H04B 10/00-10/28

Claims (19)

(57) [Claims] 1. A light source that emits light for generating an electromotive force, a light guide unit that guides light for generating an electromotive force from the light source, and a light for generating an electromotive force from the light source via the light guide unit. A photovoltaic element that receives and generates an electromotive force, is formed adjacent to the photovoltaic element, is connected to the photovoltaic element, and is driven by receiving an electromotive force supplied from the photovoltaic element. The light source, the light guide , the photovoltaic element, and the integrated circuit element.
A transmission system in which circuit elements are integrally formed . 2. The transmission system according to claim 1, wherein said photovoltaic element and said integrated circuit element are mounted on an electronic circuit board. 3. The photovoltaic element and the integrated circuit element are mounted on an electronic circuit board, and an opening is provided in the electronic circuit board for passing light for generating photovoltaic light applied to the photovoltaic element. The transmission system according to claim 1, wherein: 4. The light guide substrate according to claim 1, wherein the light guide portion comprises a light guide substrate, and the light guide substrate includes means for irradiating the photovoltaic element with light for generating an electromotive force guided through the light guide substrate. 2. The transmission system according to 1. 5. The light guided through the light guide substrate,
The transmission system according to claim 4, wherein a reflection film that prevents radiation of light excluding light applied to the photovoltaic element to the outside of the light guide substrate is provided on the light guide substrate. 6. A light source for emitting light for an input signal, a light guide unit for guiding light for the input signal from the light source, and receiving light for an input signal from the light source via the light guide unit. A narrow wavelength band photovoltaic element for converting into an arbitrary electric signal; and a narrow wavelength band photovoltaic element formed adjacent to the narrow wavelength band photovoltaic element and connected to the narrow wavelength band photovoltaic element. An integrated circuit element to which an arbitrary electric signal from a power element is input , the light source, the light guide section, and the narrow wavelength band photovoltaic element
And the integrated circuit element are integrally formed . 7. A plurality of said light sources and said narrow-wavelength-area photovoltaic elements, wherein said light sources emit light with different wavelengths for each light source, and each light is output by a different narrow-wavelength-area photovoltaic element. The transmission system according to claim 6, which receives light. 8. The transmission system according to claim 6, wherein said narrow wavelength band photovoltaic element and said integrated circuit element are mounted on an electronic circuit board. 9. The photovoltaic element having a narrow wavelength band and the integrated circuit element are mounted on an electronic circuit board, and an opening through which light for an input signal applied to the photovoltaic element having a narrow wavelength band passes is formed by the electron. The transmission system according to claim 6, wherein the transmission system is provided on a circuit board. 10. The light guide section comprises a light guide substrate, and the light guide substrate has means for irradiating the narrow wavelength band photovoltaic element with light for an input signal guided through the light guide substrate. The transmission system according to claim 6. 11. A reflection film for preventing radiation out of the light guide substrate out of light guided through the light guide substrate, excluding light irradiated to the narrow wavelength band photovoltaic element. The transmission system according to claim 10, which is provided on a guide board. A first light source 12. emits light for electromotive force, and a second light source emitting light of the input signal, the first from the light source for electromotive force of light and the second a light guide portion for guiding the light for the input signal from the light source, a photovoltaic element for electromotive receives light for the electromotive force generated from the first light source through the light guide portion, the second A narrow-wavelength band photovoltaic element that receives light for an input signal from the light source and converts it into an arbitrary electric signal , adjacent to the photovoltaic element and the narrow-wavelength band photovoltaic element
Formed and connected to the photovoltaic element and the narrow wavelength band photovoltaic element, driven by receiving the electromotive force supplied from the photovoltaic element, and from the narrow wavelength band photovoltaic element. An integrated circuit element to which an arbitrary electric signal is input , wherein the first light source, the second light source, the light guide unit,
A photovoltaic element, the narrow wavelength band photovoltaic element, and the integration circuit.
A transmission system in which a path element is integrally formed . 13. A plurality of said second light sources and said plurality of narrow-wavelength-area photovoltaic elements, wherein said second light sources emit light with different wavelengths for each of said second light sources, and separate each light. The transmission system according to claim 12, wherein the light is received by the narrow-wavelength region photovoltaic element. 14. The transmission system according to claim 12, wherein the photovoltaic element, the narrow wavelength band photovoltaic element, and the integrated circuit element are mounted on an electronic circuit board. 15. The photovoltaic element, the narrow-wavelength-range photovoltaic element, and the integrated circuit element are mounted on an electronic circuit board, and light for generating photovoltaic light is applied to the photovoltaic element. 13. An electronic circuit board, wherein an aperture is provided in the electronic circuit board for transmitting light for an input signal applied to the narrow wavelength band photovoltaic element.
Or the transmission system according to 13. 16. The light guide section comprises a light guide substrate, and means for irradiating the photovoltaic element with light for generating an electromotive force guided to the light guide substrate, and converting the light for an input signal to the narrow wavelength. 14. The transmission system according to claim 12, wherein means for irradiating the area photovoltaic element is provided on the light guide substrate. 17. Preventing radiation of the light guided through the light guide substrate except for the light applied to the photovoltaic element and the narrow wavelength band photovoltaic element to the outside of the light guide substrate. 2. The light guide substrate according to claim 1, further comprising:
14. The transmission system according to 2 or 13. 18. The p-type and n-type semiconductor layers, wherein the photovoltaic element is provided between the p-type electrode and the n-type electrode, and the p-type electrode and the n-type electrode are spaced apart from each other. Are set as one set, the p-type semiconductor layer of each set of semiconductor layers forms the p-electrode side, and the area of the junction between the p-type semiconductor layer and the n-type semiconductor layer is reduced. A stacked body in which the set closer to the p-electrode is larger than the set farther from the p-electrode; and an n-type semiconductor layer formed on the outer surface of the stack and corresponding to the n-type semiconductor layer. 14. The transmission system according to claim 1, further comprising a short-circuit electrode for short-circuiting to another set of adjacent p-type semiconductor layers. 19. The p-electrode and the n-electrode, wherein the narrow-wavelength-range photovoltaic element is provided between the p-electrode and the n-electrode. A plurality of semiconductor layers, each including one semiconductor layer, form the p-type semiconductor layer of each set of semiconductor layers on the p-electrode side, and a junction between the p-type semiconductor layer and the n-type semiconductor layer And a stacked body in which the area of the set closer to the p-electrode is larger than that of the set farther from the p-electrode. A short-circuit electrode for short-circuiting to another set of p-type semiconductor layers adjacent to the mold semiconductor layer, and provided over the laminate on which the short-circuit electrode is formed, and functions as a filter that transmits light for an input signal. An optical multilayer film, comprising:
14. The transmission system according to 12 or 13.