JP2946848B2 - Container for semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device container, and more particularly to a semiconductor device container made of a metal for hermetic sealing.

[0002]

2. Description of the Related Art Conventionally, a container for a semiconductor device for hermetically sealing a semiconductor element has a metal side wall 1 formed by processing a metal material as shown in plan and front views in FIGS. 3 (a) and 3 (b), respectively. A cavity 2 surrounded by is formed, and a semiconductor element is mounted in this cavity. A heat radiating plate 3 is integrally provided outside the metal side wall 1. Also, metal side wall 1
Is cut out to form a cutout portion 4, a ceramic side wall 5 is arranged in the cutout portion 4, and the entire surface around the ceramic side wall 5 is integrated with the metal side wall 1 by an Ag brazing material 7. . An external lead 6 is supported by the ceramic side wall 5 so as to extend through the inside and outside of the cavity 2, and is electrically connected to a semiconductor element mounted in the cavity 2.

[0003]

In such a conventional semiconductor device container, since the entire peripheral surface of the ceramic side wall 5 is in low contact with the metal side wall 1, the heat of the metal side wall 1 and the ceramic side wall 5 with respect to the heat history is reduced. Since the expansion coefficients are different, thermal stress is applied to the ceramic side wall 5 due to thermal shrinkage of the metal side wall 1 at the time of mounting the semiconductor element, and there is a problem that cracks occur in the ceramic side wall 5. Further, when the metal side wall 1 and the heat sink 3 are fixed by an inspection jig at the time of an electrical characteristic test or the like, stress is applied to the ceramic side wall 5 due to the pressure applied to the metal members constituting the metal side wall 1 and the heat radiating plate 3, and cracks are similarly generated. There's a problem.
An object of the present invention is to provide a container for a semiconductor device in which cracks on a ceramic side wall are prevented.

[0004]

According to the present invention, there is provided a semiconductor device container, wherein a plurality of concave and convex portions are provided on a side surface of a notch provided on a metal side wall, and a ceramic side wall is connected only to the convex surface of the concave and convex portion.
It is configured to be fixed in the state of touch . Further, a plurality of uneven portions are provided on the outer surface of the metal side wall along the cutout portion.

[0005]

According to the present invention, since the metal side wall and the ceramic side wall contact only at the convex surface provided in the notch, the stress generated on the metal side wall is not transmitted to the ceramic side wall as it is, and cracks on the ceramic side wall are generated. Is prevented. Further, the stress on the metal side wall is reduced by the uneven portion provided on the outer surface of the metal side wall, and the stress affecting the ceramic side wall is reduced.

[0006]

Next, the present invention will be described with reference to the drawings. 1A and 1B show an embodiment of a semiconductor device container according to the present invention, wherein FIG. 1A is a plan view and FIG. 1B is a front view.
As in the past, a metal-processed side wall 1 is formed, and a cavity 2 for mounting a semiconductor element therein is formed therein. A heat sink 3 is integrally formed outside the metal side wall 1. The inner surface, inner bottom surface, and the like of the metal side wall 1 are metallized with Mo-Mn or the like. Further, a part of the metal side wall 1 is cut out to form a cutout portion 4, in which a ceramic side wall 5 is provided to support an external lead 6. The ceramic side wall 5 is connected to the metal side wall 1 by an Ag brazing material 7, and the side surface of the notch 4 of the metal side wall 1 facing the ceramic side wall 5 is formed by cutting or the like in the thickness direction of the metal side wall. A plurality of uneven portions 8 are formed along the same. The metal side wall 1 and the ceramic side wall 5 are in contact only at the convex surface of the uneven portion 8, and the connection with the Ag brazing material 7 is performed only at this contact portion.

According to this configuration, the metal side wall 1 and the ceramic side wall 5 are contacted only by the convex surface of the uneven portion 8 and brazed by the Ag brazing material 7, so that both are brought into contact with a very small area. Become. For this reason, even if thermal stress at the time of mounting a semiconductor element or mechanical stress at the time of fixing a jig at the time of electrical characteristic inspection occurs on the metal side wall 1, this stress is applied to the ceramic side wall 5.
Can be alleviated, and the occurrence of cracks in the ceramic side wall 5 can be suppressed. According to the semiconductor device container of the present embodiment, the number of cracks on the ceramic side wall when the semiconductor element is mounted under a certain condition is as good as 0/20 cracks compared with 3/20 in the conventional container. Results have been obtained.

FIG. 2 shows a second embodiment of the present invention.
(A) is a plan view and (b) is a front view. The same parts as those in FIG. 1 are denoted by the same reference numerals. In this embodiment, the two outer surfaces of the metal side wall 1 on the side of the external lead 6 are machined by cutting or the like to form the uneven portion 9. Also, the ceramic side wall 5 provided in the cutout 4 provided in the metal side wall 1 is brazed to the metal side wall 1 with an Ag brazing material 7, but in this case, the outer corners of the ceramic side wall 5 are not brazed. Make up.

In this configuration, the unevenness 9 is provided on the outer surface of the metal side wall 1 so that the thermal stress and the mechanical stress generated on the metal side wall 1 are alleviated by the deformation of the metal side wall 1 itself, and the stress is transmitted to the ceramic side wall 5. To prevent it from being done. Thus, cracks in the ceramic side wall 5 can be effectively prevented.

[0010]

As described above, according to the present invention, a plurality of concave and convex portions are provided in a notch portion where a ceramic side wall provided on a metal side wall of a semiconductor device container is arranged , and the convex surface of the concave and convex portion is provided.
Since the ceramic side wall is fixed in contact with only the outer surface of the metal side wall, a plurality of irregularities are provided. This has the effect of reducing the effect of the mechanical stress on the ceramic side wall and reducing the occurrence of cracks on the ceramic side wall.

[Brief description of the drawings]

FIG. 1 shows a first embodiment of the present invention, wherein (a) is a plan view,
(B) is a front view.

FIG. 2 shows a second embodiment of the present invention, wherein (a) is a plan view,
(B) is a front view.

3A and 3B show a conventional semiconductor device container, wherein FIG. 3A is a plan view and FIG. 3B is a front view.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Metal side wall 2 Cavity 3 Heat sink 4 Notch 5 Ceramics side wall 6 Outer lead 7 Ag brazing material 8, 9 Concavo-convex part

Claims (2)

(57) [Claims] 1. A semiconductor device container having a cavity surrounded by a metal side wall and accommodating a semiconductor element therein, wherein a cutout provided in a part of the metal side wall is constituted by a ceramic side wall. Multiple on the side of the notch on the side wall
Of the uneven portion is provided, the ceramic sidewall of the metal sidewall the uneven portion of the convex surface only container and wherein a firmly fixed in contact with the. 2. A semiconductor device container comprising a cavity surrounded by a metal side wall and accommodating a semiconductor element therein, and a notch provided in a part of the metal side wall is constituted by a ceramic side wall. the plurality of uneven portions semiconductor device for containers, characterized in that a on the outer surface of the metal side wall along the section.