JP2957653B2 - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JP2957653B2 JP2957653B2 JP2196582A JP19658290A JP2957653B2 JP 2957653 B2 JP2957653 B2 JP 2957653B2 JP 2196582 A JP2196582 A JP 2196582A JP 19658290 A JP19658290 A JP 19658290A JP 2957653 B2 JP2957653 B2 JP 2957653B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photovoltaic device
- type layer
- amorphous silicon
- conversion efficiency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 21
- 239000013081 microcrystal Substances 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 description 16
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 （イ）産業上の利用分野 本発明は微結晶を含む非晶質シリコン層を有する光起
電力装置に関する。The present invention relates to a photovoltaic device having an amorphous silicon layer containing microcrystals.
（ロ）従来の技術 光起電力装置として、非晶質シリコン層を備えたもの
が存在するが、最近、非晶質シリコン層より光学的バン
ドギャップの広い微結晶シリコン層を用いた光起電力装
置が研究されている（特開平１−120872号公報参照）。(B) Conventional technology Some photovoltaic devices include an amorphous silicon layer. Recently, a photovoltaic device using a microcrystalline silicon layer having an optical band gap wider than that of the amorphous silicon layer has been proposed. An apparatus has been studied (see JP-A-1-120872).
（ハ）発明が解決しようとする課題 上述のように、微結晶シリコンの光学的バンドギャッ
プは、非晶質シリコンの1.8eVと比べて、2.0eVと広いた
め、光起電力装置に照射される光を有効に利用すること
ができ、光起電力装置の出力特性を向上させることが期
待できる。(C) Problems to be Solved by the Invention As described above, the optical band gap of microcrystalline silicon is as wide as 2.0 eV as compared with 1.8 eV of amorphous silicon. Light can be used effectively, and the output characteristics of the photovoltaic device can be expected to be improved.
しかしながら、微結晶シリコンの光導電率は、非晶質
シリコンの〜10-5/Ωcmと略同じ、10-2〜10-6/Ωcmであ
るのに対し、暗導電率が、非晶質シリコンの〜10-11/Ω
cmと比べて、10-2〜10-6/Ωcmと非常に大きい。従っ
て、微結晶シリコンを光起電力装置の光活性層として利
用しても、変換効率の向上は達成できなかった。However, the photoconductivity of microcrystalline silicon is about 10 −2 to 10 −6 / Ωcm, which is almost the same as that of amorphous silicon of about 10 −5 / Ωcm, whereas the dark conductivity of amorphous silicon is ~ 10 -11 / Ω
cm, which is very large, 10 -2 to 10 -6 / Ωcm. Therefore, even if microcrystalline silicon is used as a photoactive layer of a photovoltaic device, improvement in conversion efficiency cannot be achieved.
（ニ）課題を解決するための手段 本発明の光起電力装置は、微結晶及び酸素を含む非晶
質シリコン層を光活性層として備える光起電力装置であ
って、前記光活性層の層全体にわたって、前記シリコン
層中の酸素量が１〜10％であり且つ該層中の微結晶の体
積比率が10〜50％であることを特徴としている。(D) Means for Solving the Problems A photovoltaic device according to the present invention is a photovoltaic device including a microcrystalline and oxygen-containing amorphous silicon layer as a photoactive layer, wherein the layer of the photoactive layer is In the whole, the amount of oxygen in the silicon layer is 1 to 10% and the volume ratio of microcrystals in the layer is 10 to 50%.
（ホ）作用 本発明によれば、上記の構成を備えることにより、光
活性層を構成する微結晶を含む非晶質シリコン膜の暗導
電率が低減し、光導電率との差が大きくなるので、出力
特性を向上することができる。(E) Function According to the present invention, the provision of the above configuration reduces the dark conductivity of the amorphous silicon film containing microcrystals constituting the photoactive layer, and increases the difference from the photoconductivity. Therefore, output characteristics can be improved.
（ヘ）実施例 第１図は本発明の光起電力装置の一実施例を示す断面
図である。(F) Embodiment FIG. 1 is a sectional view showing an embodiment of the photovoltaic device of the present invention.
ガラス基板１上に、膜厚5000ÅのSnO2からなる透明電
極２、膜厚100Åのボロン（Ｂ）ドープ非晶質シリコン
カーバイドからなるｐ型層３、膜厚2000Åのノンドープ
のシリコンからなる光活性層としてのｉ型層４、膜厚50
0Åのリン（Ｐ）ドープ非晶質シリコンからなるｎ型層
５及びAgからなる裏面電極６を、この順に積層形成して
いる。On a glass substrate 1, a transparent electrode 2 made of SnO 2 with a thickness of 5000 °, a p-type layer 3 made of boron (B) -doped amorphous silicon carbide with a thickness of 100 °, and a photoactive material made of undoped silicon with a thickness of 2000 ° I-type layer 4 as layer, film thickness 50
An n-type layer 5 made of 0 ° phosphorus (P) -doped amorphous silicon and a back electrode 6 made of Ag are stacked in this order.
ｉ型層４は、本発明の特徴点であり、微結晶及び酸素
を含む非晶質シリコン膜（尚、この層は水素をも含んで
いる）からなる。The i-type layer 4 is a feature of the present invention, and is made of an amorphous silicon film containing microcrystals and oxygen (this layer also contains hydrogen).
第１表に、ｐ型層３、ｉ型層４及びｎ型層５の形成条
件の一例を示す。同表に示すように、ｉ型層４は層全体
にわたって同一の条件で形成している。Table 1 shows an example of conditions for forming the p-type layer 3, the i-type layer 4, and the n-type layer 5. As shown in the table, the i-type layer 4 is formed over the entire layer under the same conditions.
この条件により作成された光起電力装置は、ｉ型層４
が非晶質シリコンからなる従来の光起電力装置と比べ
て、開放電圧Vocが0.9Vから1.1Vに向上した。 The photovoltaic device produced under these conditions has an i-type layer 4
The open-circuit voltage Voc was increased from 0.9 V to 1.1 V as compared with a conventional photovoltaic device made of amorphous silicon.
ところで、ｉ型層４中の酸素量は、光起電力装置の変
換効率に影響を与える。第２図は、ｉ型層４中の酸素量
と変換効率との関係を示す特性図である。尚、同図の変
換効率は、ｉ型層４を非晶質シリコンから形成した従来
の光起電力装置の変換効率にて規格化した値である。By the way, the amount of oxygen in the i-type layer 4 affects the conversion efficiency of the photovoltaic device. FIG. 2 is a characteristic diagram showing the relationship between the amount of oxygen in the i-type layer 4 and the conversion efficiency. Note that the conversion efficiency in the figure is a value normalized by the conversion efficiency of a conventional photovoltaic device in which the i-type layer 4 is formed from amorphous silicon.
同図から明らかなように、酸素量が１〜10％の場合
に、従来の光起電力装置と比べて変換効率を向上させる
ことができる。As is clear from the figure, when the oxygen amount is 1 to 10%, the conversion efficiency can be improved as compared with the conventional photovoltaic device.
更に、ｉ型層４は、上述の説明からも分かるように、
非晶質と微結晶との混晶であるが、これらの体積比率
も、光起電力装置の変換効率に影響を与える。Further, as can be seen from the above description, the i-type layer 4
It is a mixed crystal of amorphous and microcrystalline, and their volume ratio also affects the conversion efficiency of the photovoltaic device.
第３図は、ｉ型層４中の微結晶の体積比率と変換効率
との関係を示す特性図である。同図において、変換効率
は、本発明の光起電力装置において得られる最大変換効
率にて規格化した値を示している。FIG. 3 is a characteristic diagram showing the relationship between the volume ratio of microcrystals in the i-type layer 4 and the conversion efficiency. In the figure, the conversion efficiency shows a value normalized by the maximum conversion efficiency obtained in the photovoltaic device of the present invention.
同図から見ると、変換効率は、微結晶の体積比率が30
％のときに最大となり、その両側において徐々に低下し
ている。従って、優れた変換効率を得るためには、ｉ型
層４中の微結晶の体積比率は10〜50％とするのが好まし
く、更には20〜40％とするのが好適である。As can be seen from the figure, the conversion efficiency is 30% by volume of microcrystals.
%, And the value gradually decreases on both sides. Therefore, in order to obtain excellent conversion efficiency, the volume ratio of microcrystals in the i-type layer 4 is preferably set to 10 to 50%, and more preferably 20 to 40%.
第４図は本発明の光起電力装置の他の実施例を示す断
面図である。FIG. 4 is a sectional view showing another embodiment of the photovoltaic device of the present invention.
この実施例は、ガラス基板11上に、膜厚5000ÅのSnO2
からなる透明電極12、膜厚100ÅのＢドープ非晶質シリ
コンカーバイドからなる第1p型層13、膜厚800Åのノン
ドープのシリコンからなる第1i型層14、膜厚100ÅのＰ
ドープ非晶質シリコンからなる第1n型層15、膜厚100Å
のＢドープ非晶質シリコンカーバイドからなる後2p型層
16、膜厚3000Åのノンドープのシリコンからなる第2i型
層17、膜厚100ÅのＰドープ非晶質シリコンからなる第2
n型層18及びAgからなる裏面電極19を、この順に積層形
成したタンデム構造の光起電力装置である。そして、第
1i型層14に本発明の特徴である微結晶及び酸素を含む非
晶質シリコンを用いている。In this embodiment, a 5,000-mm-thick SnO 2
A transparent electrode 12, a first p-type layer 13 made of B-doped amorphous silicon carbide having a thickness of 100 、, a first i-type layer 14 made of non-doped silicon having a thickness of 800 、, and a P-layer having a thickness of 100 Ｐ.
First n-type layer 15 made of doped amorphous silicon, thickness 100 Å
2p type layer made of B-doped amorphous silicon carbide
16, a second i-type layer 17 made of non-doped silicon having a thickness of 3000 17, a second i-type layer 17 made of P-doped amorphous silicon having a thickness of 100 Å
This is a photovoltaic device having a tandem structure in which an n-type layer 18 and a back electrode 19 made of Ag are laminated in this order. And the second
For the 1i-type layer 14, amorphous silicon containing microcrystal and oxygen, which is a feature of the present invention, is used.
第２表に、第2i型層17の形成条件の一実施例を示す。
その他の各層の形成条件は、上記第１表に示す形成条件
に準じた条件である。本実施例においても、第2i型層17
は層全体にわたって同一の条件で形成している。Table 2 shows an example of the conditions for forming the second i-type layer 17.
Other conditions for forming each layer are the same as the conditions shown in Table 1 above. Also in the present embodiment, the second i-type layer 17
Are formed under the same conditions over the entire layer.
こうして形成された光起電力装置の開放電圧（Vo
c）、短絡電流（Isc）、曲線因子（FF）及び変換効率
（η）を第３表に示す。尚、同表には、第1i型層14とし
て非晶質シリコンを用いた従来の光起電力装置の各出力
特性も合わせて示している。 The open voltage (Vo) of the photovoltaic device thus formed
Table 3 shows c), short-circuit current (Isc), fill factor (FF) and conversion efficiency (η). The table also shows each output characteristic of a conventional photovoltaic device using amorphous silicon as the first i-type layer 14.
同表に示す通り、本発明の光起電力装置の出力特性
は、FFを除く全ての出力特性の面で向上している。 As shown in the table, the output characteristics of the photovoltaic device of the present invention are improved in all output characteristics except FF.
（ト）発明の効果 本発明の光起電力装置は、非晶質シリコンと比べて、
バンドギャップが広く、かつ光導電率及び暗導電率が変
わらない、微結晶及び酸素を含む非晶質シリコン膜を光
活性層として備えるので、開放電圧、変換効率等、出力
特性を向上することができる。(G) Effects of the Invention The photovoltaic device of the present invention has a
Since an amorphous silicon film containing microcrystals and oxygen is provided as a photoactive layer having a wide band gap and unchanged photoconductivity and dark conductivity, output characteristics such as open-circuit voltage and conversion efficiency can be improved. it can.
第１図は本発明の一実施例を示す断面図、第２図は酸素
量と変換効率との関係を示す特性図、第３図は微結晶の
体積比率と変換効率との関係を示す特性図、第４図は本
発明の他の実施例を示す断面図である。FIG. 1 is a cross-sectional view showing one embodiment of the present invention, FIG. 2 is a characteristic diagram showing the relationship between oxygen content and conversion efficiency, and FIG. 3 is a characteristic showing the relationship between volume ratio of microcrystals and conversion efficiency. FIG. 4 is a sectional view showing another embodiment of the present invention.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−209871（ＪＰ，Ａ) 特開 昭62−115710（ＪＰ，Ａ) 特開 昭56−142680（ＪＰ，Ａ) 特開 昭57−187973（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 31/04 ──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-62-209871 (JP, A) JP-A-62-115710 (JP, A) JP-A-56-142680 (JP, A) JP-A-57-142680 187973 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) H01L 31/04
Claims (1)
光活性層として備える光起電力装置であって、前記光活
性層の層全体にわたって、前記シリコン層中の酸素量が
１〜10％であり且つ該層中の微結晶の体積比率が10〜50
％であることを特徴とした光起電力装置。1. A photovoltaic device comprising an amorphous silicon layer containing microcrystals and oxygen as a photoactive layer, wherein the amount of oxygen in the silicon layer is 1 to 10 over the entire layer of the photoactive layer. % And the volume ratio of microcrystals in the layer is 10 to 50%.
% Of the photovoltaic device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2196582A JP2957653B2 (en) | 1990-07-24 | 1990-07-24 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2196582A JP2957653B2 (en) | 1990-07-24 | 1990-07-24 | Photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0482276A JPH0482276A (en) | 1992-03-16 |
| JP2957653B2 true JP2957653B2 (en) | 1999-10-06 |
Family
ID=16360142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2196582A Expired - Fee Related JP2957653B2 (en) | 1990-07-24 | 1990-07-24 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2957653B2 (en) |
-
1990
- 1990-07-24 JP JP2196582A patent/JP2957653B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0482276A (en) | 1992-03-16 |
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