JP3076282B2 - Method for manufacturing semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates relates to a method of manufacturing a semiconductor device, in particular BGA (Ball Grid Array) · P
The present invention relates to a method for manufacturing a resin-encapsulated semiconductor device having a GA (pin grid array) structure.

[0002]

2. Description of the Related Art As a prior art, Japanese Patent Laid-Open No. 1-185960 is disclosed.
A resin-sealed semiconductor device having a PGA structure disclosed in Japanese Unexamined Patent Publication (Kokai) No. H10-210 will be described with reference to FIGS.

As shown in a plan view of FIG. 8 and a sectional view of FIG.
A through hole 35 is provided in the terminal mounting portion 33 of the lead frame, and the element 7 is mounted on the upper surface of the island of the lead frame.
Connected by

[0004] Next, as shown in FIG.
5 is set by inserting and fixing a metal lead pin as the external terminal 34.

[0005] Thereafter, as shown in FIG.
The transfer molding is performed by pouring a resin 36 of the same material, for example, a polyimide resin on the upper and lower surfaces of the lead frame and hardening the resin by using the molds 3 and 14.
The resin-encapsulated semiconductor device having the A structure was manufactured.

[0006]

In the prior art semiconductor device, the upper and lower surfaces of the lead frame are sealed with the same type of resin. Resin suitable for the lower surface side of the lead frame on the opposite side could not be selected and used.

In the prior art method of manufacturing a semiconductor device, the sealing resin is injected into the upper and lower surfaces of the lead frame during transfer molding. A gap is formed in the contact surface between the mold and the sealing mold, and resin burrs adhere to the lead frame surface fixed by the sealing mold, and it is essential to remove the resin burrs.

In the above-mentioned prior art, since a lead frame to which external lead pins are attached in advance is used, it is inevitable that the lead frame itself becomes complicated.

An object of the present invention is to provide a semiconductor device using a resin suitable for the upper surface and the lower surface of a lead frame.
It is an object of the present invention to provide a preferable production method for obtaining the same.

It is another object of the present invention to provide a method of manufacturing a semiconductor device in which the resin injection balance between the upper surface and the lower surface of the lead frame during resin sealing is not lost.

Another object of the present invention is to provide a manufacturing method capable of manufacturing a PGA or BGA type semiconductor device having an external terminal penetrating a resin from a lead frame with high productivity without complicating the lead frame itself. To provide.

[0012]

[0013]

Feature of the present invention SUMMARY OF THE INVENTION may be equipped with a device on the upper surface of the lead frame wire connection, met manufacturing method of a semiconductor device sealed with resin by a mold comprising said element and wire Then, a resin compound that seals the upper surface side and the lower surface side opposite to the upper surface side is molded in advance, and the upper surface side of the lead frame is molded using a mold while the resin compound is in contact with the lower surface of the lead frame. the method of manufacturing a semiconductor device of a resin sealing Te, half of the resin compound is embedded a large number of external terminals
A method for manufacturing a conductor device. In this case, the external terminal is a metal lead pin, and the connection between the metal lead pin and the inner lead is performed by a solder paste during the resin sealing step, or the external terminal is formed of a solder material, Preferably, the connection between the solder terminal and the inner lead is performed during a sealing step. Alternatively, the feature of the present invention is that the element is mounted on the upper surface of the lead frame.
Mounted with a wire connection, including the element and the wire
This is a method of manufacturing a semiconductor device in which resin is sealed by a mold.
A resin core for sealing the upper surface and the lower surface opposite to the upper surface.
The compound is preformed and the resin compound is
The lead is held in contact with the lower surface of the lead frame.
A semiconductor device that seals the upper surface of the frame with a resin using a mold
In the method for manufacturing location, the resin compound is formed a number of through holes for inserting the external terminal half
A method for manufacturing a conductor device. In this case, it is preferable that after the resin sealing step, a solder terminal connected to the inner lead of the lead frame through the through hole is formed as an external terminal. Each of the above manufacturing methods
In the above, the resin compound is a melamine resin, and the upper surface side can be resin-sealed with a polyimide resin using a mold. Alternatively, the resin compound is a polyimide resin, and the upper surface side can be resin-sealed with a polyimide resin using a mold.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings.

FIGS. 1 to 4 are views relating to a first embodiment of the present invention. FIG. 1 is a perspective view (A) and a cross-sectional view (B) showing a resin compound, and FIG. FIG. 3 is a plan view showing a connected lead frame, FIG. 3 is a cross-sectional view showing a state of transfer molding, and FIG. 4 is a cross-sectional view (A) and (B) showing the obtained semiconductor device, respectively.

First, referring to FIG. 1, a resin compound 1 made of a melamine resin is molded in advance by a mold.

This resin compound 1 has a thickness of about 150
It is micron, and the lower surface side opposite to the upper surface where the lead frame element is mounted and connected to the wire is resin-sealed, and it has the same shape as the lower mold cavity of transfer molding in the sealing process I have.

The resin compound 1 has a large number of external terminals 3
Are arranged and embedded in a matrix. One surface of the external terminal 3 that contacts the lower surface of the lead frame has its surface (connection surface) coincident with one main surface of the resin compound 1, and the other side protrudes from the other main surface of the resin compound 1. .

The diameter of the external terminal 3 (the diameter of the thin portion) is about 0.3.
It is 2 mm or more and the length is about 200 microns. When the metal lead pin 3A is used, a PGA type semiconductor device is obtained. When the protruding portion is formed of the solder material 3B and becomes a solder ball, a BGA type semiconductor device is obtained.

Referring to FIG. 2, a number of inner leads 5 are provided.
A solder paste 6 is formed on each of the terminal mounting portions 12, and an element (semiconductor pellet) 7 is mounted and mounted on the upper surface of the island (element mounting section). Are prepared by connecting lead wires 4 with thin metal wires 8. This solder paste may be formed on the connection surface side of the metal lead pins 3A of the external terminals embedded in the resin compound 1.

Next, as shown in FIG. 3, a resin compound 1 in which the external terminal of FIG. 1 is embedded in a cavity of a sealing mold (lower mold) 13 and which has the same shape as that of the cavity, is placed on the cavity. The lead frame 4 after the element assembly shown in FIG. 2 is set. At this time, the upper surface (connection surface) of the corresponding metal lead pin 3A comes into contact with the lower surface of the terminal mounting portion 12 of each inner lead via the solder paste 6.

Then, the sealing mold (upper mold) 14 is covered, the outside of the inner lead of the lead frame is fastened with both molds, and the upper side of the lead frame is formed by transfer molding in which the polyimide resin 9 is injected. The resin is sealed with a polyimide resin 9 having a thickness (height from the lead frame) of about 600 microns.

In this embodiment, when the metal lead pin 3A as an external terminal is used in advance in the resin compound, the heat during transfer molding is transmitted from the encapsulation mold, and the metal lead pin 3A is Occasionally, the PGA-type semiconductor device shown in FIG. 4A is fixed to the terminal mounting portion of the inner lead.

Similarly, when the solder material 3B is used as the external terminal, the portion fixed to the terminal mounting portion of the inner lead due to the heat during transfer molding and projecting from the resin sealing portion (resin compound) has an internal diameter. 4B, and becomes a BGA type semiconductor device shown in FIG. 4B. In the case of the solder material 3B, the formation of the solder paste 6 on the lead frame can be omitted.

Next, the second embodiment of the present invention will be described with reference to FIGS.
An embodiment will be described. 5 is a perspective view (A) and a cross-sectional view (B) showing a resin compound, FIG. 6 is a plan view showing a lead frame in a state where elements are mounted and connected by wires,
FIG. 3 is a sectional view showing the state of the transfer mold, and FIG. 7 is a sectional view showing the obtained semiconductor device.

First, referring to FIG. 5, a resin compound 21 having a thickness of about 150 μm made of melamine resin and having the same shape as the lower mold cavity of the transfer mold in the sealing step is previously formed by the mold. .

The diameter of the resin compound 21 is about 0.2 m.
A large number of through holes 23 of m or more are arranged in a matrix.

Next, as shown in FIG. 6, a sealing mold (lower mold)
A resin compound 21 conforming to the shape is put in the cavity 13. Also, a large number of protrusions 11 corresponding to the through holes 23 are formed in this sealing mold. By inserting the protrusions 11 into each of the through holes 23, a resin for sealing the upper surface side in the transfer step is formed. So that the through hole 23 is not filled.

Then, the lead frame 4 after the device assembly similar to that of FIG. 2 is set. In this case, the formation of the solder paste 6 can be omitted. Further, each terminal mounting portion 12 is located on the corresponding through hole 23.

Then, in the same manner as in FIG.
By performing transfer molding to inject
The upper surface of the lead frame is resin-sealed with a polyimide resin 9 having a thickness (height from the lead frame) of about 600 microns.

Thereafter, the resin-sealed semi-finished product is taken out of the sealing molds 13 and 14, and connected to the respective terminal mounting portions 12 by performing a soldering process, filling the through holes 23 and filling the resin compound 1. Numerous solder terminals 3 whose surface portions are solder balls about twice the diameter of the through hole
By forming B (3) collectively, B (3) shown in FIG.
A GA type semiconductor device is obtained.

In the first and second embodiments described above, the resin sealing on the lower surface side of the lead frame is performed by the resin compounds 1 and 21 formed in advance, and the resin compounds 1 and 21 are sealed by a sealing mold. After the transfer mold is set in the (lower mold) 13, the pressure of the resin 9 injected during the transfer mold mainly works in the encapsulating mold (upper mold) 14, and the pre-set lead frame after assembling the elements. Is pressed down from the top toward the resin compound that has been set in advance, so that the lead frame and the encapsulating mold (lower mold) are more closely adhered to each other, so that resin burr formation can be prevented. Further, since the lower surface of the lead frame is supported by the resin compounds 1 and 21 during the transfer molding, the inner lead to which the island or the wire on which the element is mounted or the wire is connected is not affected by the pressure of the sealing resin from above. Desired downward movement is prevented.

The resin compounds 1 and 21 which have been formed in advance are melted by the thermocompression bonding at the time of transfer molding, so that the resin compounds 1 and 21 can be fixed well to the lead frame.

Also, in any of the embodiments, it is not necessary to use a complicated lead frame to which external terminals are fixed in advance, and the first compound can be obtained by simply providing a resin compound in advance using a general lead frame. In the embodiment, all the external terminals can be connected at the time of transfer molding, and in the second embodiment, all the external terminals can be formed and connected collectively after the transfer molding, so that the productivity is high. It will be.

Further, in any of the embodiments, the resin compound 1 for sealing the lower surface side of the lead frame is made of a melamine resin having better moisture and moisture resistance than a polyimide resin. On the other hand, elements are mounted on the upper surface side of the lead frame and connected by wires. Therefore, in consideration of the passivation effect other than the moisture and moisture resistance, the fluidity at the time of transfer molding, the subsequent stress, and the like, the resin for sealing the upper surface side of the lead frame is preferably a polyimide resin rather than a melamine resin.

As described above, a semiconductor device having high quality and high reliability can be obtained by selectively using the material of the resin on the upper surface side and the resin material on the lower surface side of the lead frame.

However, depending on the type of the semiconductor device, the resin compound and the upper sealing resin can be made of the same material, for example, both of them can be made of polyimide resin. Also in this case, the effects of the above-described manufacturing method are the same as those of the embodiment.

[0038]

According to the present invention, since a resin compound for sealing one surface side of the lead frame is formed in advance, it is possible to use a resin suitable for the upper surface side and the lower surface side of the lead frame, respectively. Thus, a high-quality and high-reliability semiconductor device can be obtained.

Further, since a resin compound for sealing one surface side of the lead frame is formed in advance, it is possible to prevent the occurrence of resin burrs due to the imbalance in resin injection between both sides of the lead frame during transfer molding. ,
In addition, undesired downward movement of the lead frame can be prevented.

Furthermore, since a resin compound in which external terminals are embedded or a resin compound in which through holes for forming external terminals are provided is used, a PGA type or BGA type semiconductor device can be produced at high production without complicating the lead frame itself. It can be manufactured by the nature.

[Brief description of the drawings]

FIG. 1 is a diagram showing a resin compound according to a first embodiment of the present invention, where (A) is a perspective view and (B) is a cross-sectional view.

FIG. 2 is a plan view showing a lead frame in a state where elements used in the embodiment of the present invention are mounted and connected by wires.

FIG. 3 is a sectional view showing a transfer mold according to the first embodiment of the present invention.

4A and 4B are cross-sectional views illustrating a semiconductor device according to a first embodiment of the present invention, wherein FIG. 4A is a PGA type semiconductor device,
(B) is a BGA type.

FIG. 5 is a view showing a resin compound according to a second embodiment of the present invention, wherein (A) is a perspective view and (B) is a cross-sectional view.

FIG. 6 is a sectional view showing a transfer mold according to a second embodiment of the present invention.

FIG. 7 is a sectional view showing a semiconductor device according to a second embodiment of the present invention.

FIG. 8 is a plan view showing a conventional lead frame in a state where elements are mounted and connected by wires.

9A and 9B are diagrams showing a conventional lead frame in a state in which elements are mounted and connected by wires, wherein FIG. 9A is a cross-sectional view before an external terminal is fixed to a through hole, and FIG. FIG. 7 is a cross-sectional view after fixing the slab.

FIG. 10 is a cross-sectional view showing a transfer mold according to the related art.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Resin compound (lower surface side sealing resin) 3 External terminal 3A Metal lead pin 3B Solder material (solder ball) 4 Lead frame 5 Inner lead 6 Solder paste 7 Element 8 Wire 9 Upper surface side sealing resin 11 Projection part 12 Terminal mounting part 13 Sealing mold (lower mold) 14 Sealing mold (upper mold) 21 Resin compound (lower side sealing resin) 23 Through hole 31 Lead frame 32 Inner lead 33 Terminal mounting part 34 External terminal 35 Through hole 36 Sealing resin

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ identification code FI H01L 23/31 (58) Investigated field (Int.Cl. ⁷ , DB name) H01L 21 / 56,23 / 12 H01L 23/28 , 23/31

Claims (7)

(57) [Claims] An element is mounted on a first main surface of a lead frame.
Mounted and wire-connected, including the element and wire
A method of manufacturing a semiconductor device to be resin-sealed by a mold,
Resin for sealing the second main surface side opposite to the first main surface
The compound is preformed and the resin compound is
The lead frame in contact with the second main surface.
The first main surface side of the lead frame is resin-sealed using a mold.
A method of manufacturing a semiconductor device, comprising:
Te method of manufacturing a semiconductor device, wherein the resin compound is embedded a large number of external terminals. 2. The external terminal is a metal lead pin,
2. The method according to claim 1 , wherein the connection between the metal lead pin and the inner lead is performed by a solder paste during the resin sealing step. 3. The external terminal is made of a solder material.
2. The method according to claim 1 , wherein the connection between the solder material and the inner lead is performed during the resin sealing step. 4. An element is mounted on a first main surface of a lead frame.
Mounted and wire-connected, including the element and wire
A method of manufacturing a semiconductor device to be resin-sealed by a mold,
Resin for sealing the second main surface side opposite to the first main surface
The compound is preformed and the resin compound is
The lead frame in contact with the second main surface.
The first main surface side of the lead frame is resin-sealed using a mold.
A method of manufacturing a semiconductor device, comprising:
Te method of manufacturing a semiconductor device, wherein a plurality of through holes for inserting the external terminals in the resin compound is formed. After wherein said resin sealing step, the manufacturing method of a semiconductor device according to claim 4, wherein the solder terminal to be connected to the inner lead of the lead frame through the through hole and forming an external terminal. Wherein said resin compound is a melamine resin, according to claim 1 to claim, characterized in that the resin sealing in a polyimide resin using a mold the first main surface 5
The method for manufacturing a semiconductor device according to any one of the above. Wherein said resin compound is polyimide resin, according to claim 1 to claim, characterized in that the resin sealing in a polyimide resin using a mold the first main surface
6. The method for manufacturing a semiconductor device according to any one of items 5 .