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JP3100182B2 - Microwave dielectric porcelain composition - Google Patents
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JP3100182B2 - Microwave dielectric porcelain composition - Google Patents

Microwave dielectric porcelain composition

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Publication number
JP3100182B2
JP3100182B2 JP03138210A JP13821091A JP3100182B2 JP 3100182 B2 JP3100182 B2 JP 3100182B2 JP 03138210 A JP03138210 A JP 03138210A JP 13821091 A JP13821091 A JP 13821091A JP 3100182 B2 JP3100182 B2 JP 3100182B2
Authority
JP
Japan
Prior art keywords
bao
added
amount
microwave dielectric
dielectric porcelain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP03138210A
Other languages
Japanese (ja)
Other versions
JPH04338168A (en
Inventor
宗臣 加藤
博文 尾関
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Niterra Co Ltd
Original Assignee
NGK Spark Plug Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Spark Plug Co Ltd filed Critical NGK Spark Plug Co Ltd
Priority to JP03138210A priority Critical patent/JP3100182B2/en
Publication of JPH04338168A publication Critical patent/JPH04338168A/en
Application granted granted Critical
Publication of JP3100182B2 publication Critical patent/JP3100182B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、マイクロ波誘電体磁器
組成物に関し、更に詳しく言えば、共振周波数の温度係
数(以下、単にτfという。)をゼロに近づけることが
でき、又TiO2 /BaOのモル比及びTa2 5 の添
加量を加減することによって、τfをゼロを中心として
プラス側とマイナス側に任意に制御し得ることができ
る。本発明はマイクロ波領域において誘電体共振器、マ
イクロ波集積回路基板、各種マイクロ波回路のインピー
ダンス整合等に利用される。
The present invention relates to relates to a microwave dielectric ceramic composition and, more particularly, the temperature coefficient of resonant frequency (hereinafter, simply referred .tau.f.) Can be brought close to zero, and TiO 2 / By adjusting the molar ratio of BaO and the added amount of Ta 2 O 5 , τf can be arbitrarily controlled to a plus side and a minus side with zero as a center. INDUSTRIAL APPLICABILITY The present invention is used in a microwave region for impedance matching of a dielectric resonator, a microwave integrated circuit board, various microwave circuits, and the like.

【0002】[0002]

【従来の技術】従来のマイクロ波誘電体磁器組成物(以
下、単に、誘電体磁器組成物という。)としては、Ba
O−4TiO2 磁器組成物等が知られている。
2. Description of the Related Art Conventional microwave dielectric ceramic compositions (hereinafter simply referred to as dielectric ceramic compositions) include Ba.
O-4TiO 2 ceramic composition and the like are known.

【0003】[0003]

【発明が解決しようとする問題点】しかし、従来の前記
誘電体磁器組成物では、誘電率(以下、単にεr とい
う。)が高く、無負荷Q(以下、単にQuという。)が
大きいが、τfが比較的正に大きいため安定性に欠けて
いるという問題があった。
THE INVENTION Problems to be Solved point, however, the conventional of the dielectric ceramic composition, a dielectric constant (hereinafter, simply epsilon r that.) High, unloaded Q (hereinafter, simply referred to. Qu) is large , Τf are relatively large, and thus lack stability.

【0004】本発明は、上記欠点を克服するものであ
り、TiO2 /BaOのモル比及びTa2 5 の添加量
を加減することによって、τfをゼロを中心とした小さ
な値とすることができ、また、τfをゼロを中心として
プラス側とマイナス側の所望の値に任意に制御し得るこ
とができる誘電体磁器組成物を提供することを目的とす
る。
The present invention overcomes the above-mentioned disadvantages, and it is possible to reduce τf to a small value centered at zero by adjusting the molar ratio of TiO 2 / BaO and the amount of Ta 2 O 5 added. It is another object of the present invention to provide a dielectric ceramic composition capable of arbitrarily controlling τf to desired values on the plus side and the minus side with zero as a center.

【0005】[0005]

【課題を解決するための手段】本発明者らは、BaO・
xTiO2系誘電体磁器組成物において、τfをゼロに
近づける組成について種々検討した結果、これにTiO
2/BaOのモル比及びTa25の添加量を加減するこ
とによりこの欠点が解消されることを見出して、本発明
を完成するに至ったのである。即ち、本発明の誘電体磁
器組成物は、酸化バリウム及び酸化チタンからなり、そ
の組成式をBaO・xTiO2で表したときに、xが
3.7≦x≦4.2の範囲にある組成を主成分とし、副
成分としてTa25を前記主成分100重量部に対し、
3〜10重量部(以下、単に重量%という。)の範囲内
で添加含有させてなり、ZnOを含有しないことを特徴
とする。
Means for Solving the Problems The present inventors have proposed BaO.
As a result of various investigations on the composition for bringing τf close to zero in the xTiO 2 -based dielectric porcelain composition,
The inventors have found that this disadvantage can be solved by adjusting the molar ratio of 2 / BaO and the amount of Ta 2 O 5 added, and have completed the present invention. That is, the dielectric porcelain composition of the present invention is composed of barium oxide and titanium oxide, and when its composition formula is represented by BaO.xTiO 2 , x is in the range of 3.7 ≦ x ≦ 4.2. As a main component, and Ta 2 O 5 as a sub component with respect to 100 parts by weight of the main component.
3-10 parts by weight (hereinafter, simply referred to as% by weight.) Ri Na by containing additive in a range of, characterized in that it does not contain ZnO.

【0006】[0006]

【実施例】以下実施例により本発明を具体的に説明す
る。 (1)各試料の作製 純度99.9%のBaCO3 粉末、TiO2 粉末を各組
成に応じた所定量、更に、表1、表2、表3に示すTa
2 5 粉末の所定量(3、6、10重量%)を秤量し混
合した。その後、アイリッヒミキサーで乾式による混合
及び一次粉砕を施した後、大気雰囲気中1100℃の温
度で2時間仮焼した。次いで、この仮焼粉末に適量の有
機バインダーとイオン交換水(260〜500g)を加
え、20mmφのアルミナボールで二次粉砕した後、噴
霧乾燥により造粒し、この造粒された素地を1000k
g/cm2 のプレス圧で19mmφ×8mmt(厚さ)
の円板状に成形した。次にこの成形体を大気中、125
0℃から1325℃の温度で、4時間焼成し、最後に1
6mmφ×6mmt(厚さ)の円板状に研磨して、誘電
体試料(No.1〜33)とした。そして、各試料につ
き、平行導体板型誘電体円柱共振器法(TE011 MOD
E)によりεr 、Qu値及びτf、更に焼結密度を測定
した。尚、共振周波数は4.5GHzである。
The present invention will be described in detail with reference to the following examples. (1) Preparation of each sample BaCO 3 powder and TiO 2 powder having a purity of 99.9% were prepared in predetermined amounts according to the respective compositions, and further, Ta shown in Tables 1, 2 and 3 was used.
A predetermined amount (3, 6, 10% by weight) of 2 O 5 powder was weighed and mixed. Then, after performing dry mixing and primary pulverization using an Erich mixer, the mixture was calcined in an air atmosphere at a temperature of 1100 ° C. for 2 hours. Next, an appropriate amount of an organic binder and ion-exchanged water (260 to 500 g) are added to the calcined powder, and the mixture is subjected to secondary pulverization with a 20 mmφ alumina ball, and then granulated by spray drying.
19mmφ × 8mmt (thickness) at a press pressure of g / cm 2
Into a disk shape. Next, this molded body is placed in the air at 125
Bake for 4 hours at a temperature of 0 ° C to 1325 ° C.
It was polished into a disk shape of 6 mmφ × 6 mmt (thickness) to obtain dielectric samples (Nos. 1 to 33). Then, for each sample, a parallel conductor plate type dielectric cylinder resonator method (TE 011 MOD
According to E), ε r , Qu value and τf, and the sintered density were measured. Note that the resonance frequency is 4.5 GHz.

【0007】(2)性能評価 前記の各誘電体試料の特性を調べ、その結果を表1、表
2、表3及び図1〜図3に示す。尚、表1の母材はBa
O−3.7TiO2 、表2の母材はBaO−4Ti
2 、表3の母材はBaO−4.18TiO2 である。
(2) Performance Evaluation The characteristics of each of the above dielectric samples were examined, and the results are shown in Tables 1, 2, and 3 and FIGS. The base material in Table 1 is Ba.
O-3.7TiO 2 , the base material in Table 2 is BaO-4Ti
O 2 , the base material in Table 3 is BaO-4.18TiO 2 .

【0008】[0008]

【表1】 [Table 1]

【0009】[0009]

【表2】 [Table 2]

【0010】[0010]

【表3】 [Table 3]

【0011】これらの結果によれば、TiO2 /BaO
のモル比が3.7、4.0及び4.18の場合は、Ta
2 5 の添加量の増加に伴いτfは正の値から負の方向
へ向かう。特に、これが3.7及び4.0の場合はその
傾向が顕著で、0を越えてマイナスの方向へ移行して行
く。また、Qu値は全体的に低いものの、測定できた場
合のうち試料No.5、8、19、25を除いて104
0〜2830を示し、十分に実用的な範囲にあるといえ
る。尚、この低Qu値の原因は、BaTi4 9 がTa
2 5 との反応で減少したためと考えられる。また、ε
rも、測定できた範囲においては、16.0〜38.0
を示し、これも十分に実用的な範囲にあるといえる。ま
た、焼結密度も、3.20〜4.60g/cm3 を示
し、十分に緻密であるといえる。尚、焼結密度が小さい
場合にεr も小さい傾向を示し、低εr の原因は、緻密
化が不十分であるためと考えられる。
[0011] According to these results, TiO 2 / BaO
Are 3.7, 4.0 and 4.18, Ta is
As the addition amount of 2 O 5 increases, τf changes from a positive value to a negative direction. In particular, when the values are 3.7 and 4.0, the tendency is remarkable, and the value goes beyond 0 and moves in the negative direction. Although the Qu value was low overall, the sample No. 104 except for 5, 8, 19 and 25
0 to 2830, which is in a sufficiently practical range. The reason for this low Qu value is that BaTi 4 O 9 is Ta
This is probably due to the decrease due to the reaction with 2 O 5 . Also, ε
r is also 16.0-38.0 in the range where measurement was possible.
It can be said that this is also within a sufficiently practical range. In addition, the sintering density also shows 3.20 to 4.60 g / cm 3 , which means that it is sufficiently dense. It should be noted that when the sintering density is low, ε r also tends to be small, and the reason for the low ε r is considered to be insufficient densification.

【0012】更に、表1(X=3.7)によれば125
0〜1325℃の焼成温度、表2(X=4.0)によれ
ば1275〜1300℃の焼成温度、表3(X=4.1
8)によれば1300℃の焼成温度の各場合は、安定し
た性能の焼結体が得られた。一方、Ta2 5 の添加量
が6〜10重量%の場合は、τf が0に近い値を示すの
で好ましく、特に図2及び図3においては、6重量%前
後にて飽和するような傾向がある。しかも、表1〜2に
よれば、Ta2 5 の添加量が3重量%及び10重量%
の場合は、特性の測定不能になる場合がある。更に、T
2 5 の添加量が多くなると、焼結密度が小さくなる
傾向がある。従って、Ta2 5 の添加量が6重量%前
後、即ち4〜8重量%の場合は、τf が小さくて、焼結
密度が大きくて且つ安定した焼結体を製造でき、大変実
用的である。
Further, according to Table 1 (X = 3.7), 125
According to Table 2 (X = 4.0), firing temperature of 1275 to 1300 ° C., Table 3 (X = 4.1)
According to 8), a sintered body having stable performance was obtained at each firing temperature of 1300 ° C. On the other hand, when the addition amount of Ta 2 O 5 is 6 to 10% by weight, τ f is preferably close to 0, and is particularly preferable in FIGS. Tend. Moreover, according to Tables 1 and 2, the amount of Ta 2 O 5 added was 3% by weight and 10% by weight.
In the case of, measurement of the characteristics may not be possible. Further, T
If the amount of a 2 O 5 becomes large, there is a tendency that the sintered density is reduced. Therefore, when the added amount of Ta 2 O 5 is about 6% by weight, that is, 4 to 8% by weight, a τ f is small, a sintered density is large and a stable sintered body can be manufactured, which is very practical. It is.

【0013】尚、本発明においては、前記具体的実施例
に示すものに限られず、目的、用途に応じて本発明の範
囲内で種々変更した実施例とすることができる。即ち、
前記仮焼温度等の仮焼条件、焼成温度等の焼成条件等は
種々選択できる。また、BaOとなる原料も前記BaC
3 以外にも、過酸化物、水酸化物、硝酸塩等を用いる
こともできる。
The present invention is not limited to the specific embodiments described above, but can be variously modified within the scope of the present invention according to the purpose and application. That is,
Various calcination conditions such as the calcination temperature and calcination conditions such as the calcination temperature can be selected. The raw material to be BaO is also BaC
In addition to O 3 , peroxides, hydroxides, nitrates and the like can also be used.

【0014】[0014]

【発明の効果】以上のように、本発明の誘電体磁器組成
物は、TiO2 /BaOのモル比を3.7〜4.2と
し、且つ及びTa2 5の添加量を3〜10重量%の範
囲に加減することにより、εr 、Quを実用的な特性範
囲を維持しつつ、τfをプラスの大きな値からマイナス
の方向に小さくしたものである。また、本誘電体磁器組
成物は、TiO2 /BaOのモル比及びTa2 5 の添
加量を加減することによって、τfをゼロを中心として
プラス側とマイナス側の所望の値に任意に制御されたも
のである。従って、目的に応じて、TiO2 /BaOの
モル比及びTa2 5 の添加割合を変えることができ
る。
As is evident from the foregoing description, the dielectric ceramic composition of the present invention, the molar ratio of TiO 2 / BaO and from 3.7 to 4.2, and and the addition amount of Ta 2 O 5 3 to 10 By increasing or decreasing the weight% range, τf is decreased in a negative direction from a large positive value while maintaining ε r and Qu in a practical characteristic range. Further, the dielectric ceramic composition of the present invention can arbitrarily control τf to a desired value on the plus side and the minus side centering on zero by adjusting the molar ratio of TiO 2 / BaO and the amount of Ta 2 O 5 added. It was done. Therefore, the molar ratio of TiO 2 / BaO and the addition ratio of Ta 2 O 5 can be changed according to the purpose.

【図面の簡単な説明】[Brief description of the drawings]

【図1】母材BaO−3.7TiO2 において、焼成温
度を変えた場合のTa2 5 添加量とτfとの関係を示
すグラフである。
FIG. 1 is a graph showing the relationship between the amount of Ta 2 O 5 added and τf when the firing temperature is changed in a base material BaO-3.7TiO 2 .

【図2】母材BaO−4.0TiO2 において、焼成温
度を変えた場合のTa2 5 添加量とτfとの関係を示
すグラフである。
FIG. 2 is a graph showing the relationship between the amount of Ta 2 O 5 added and τf when the firing temperature is changed in a base material BaO-4.0TiO 2 .

【図3】母材BaO−4.18TiO2 において、焼成
温度を変えた場合のTa2 5 添加量とτfとの関係を
示すグラフである。
FIG. 3 is a graph showing the relationship between the amount of Ta 2 O 5 added and τf when the firing temperature is changed in a base material BaO-4.18TiO 2 .

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) C04B 35/42 - 35/49 CA(STN) REGISTRY(STN)──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. 7 , DB name) C04B 35/42-35/49 CA (STN) REGISTRY (STN)

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 酸化バリウム及び酸化チタンからなり、
その組成式をBaO・xTiO2で表したときに、xが
3.7≦x≦4.2の範囲にある組成を主成分とし、副
成分としてTa25を前記主成分100重量部に対し、
3〜10重量部の範囲内で添加含有させてなり、ZnO
を含有しないことを特徴とするマイクロ波誘電体磁器組
成物。
1. It comprises barium oxide and titanium oxide,
When the composition formula is represented by BaO.xTiO 2 , the composition in which x is in the range of 3.7 ≦ x ≦ 4.2 is the main component, and Ta 2 O 5 is added as an auxiliary component to 100 parts by weight of the main component. On the other hand,
3-10 added is contained in the range of parts by Ri name and, ZnO
A microwave dielectric porcelain composition characterized by not containing any .
JP03138210A 1991-05-14 1991-05-14 Microwave dielectric porcelain composition Expired - Fee Related JP3100182B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03138210A JP3100182B2 (en) 1991-05-14 1991-05-14 Microwave dielectric porcelain composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03138210A JP3100182B2 (en) 1991-05-14 1991-05-14 Microwave dielectric porcelain composition

Publications (2)

Publication Number Publication Date
JPH04338168A JPH04338168A (en) 1992-11-25
JP3100182B2 true JP3100182B2 (en) 2000-10-16

Family

ID=15216659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03138210A Expired - Fee Related JP3100182B2 (en) 1991-05-14 1991-05-14 Microwave dielectric porcelain composition

Country Status (1)

Country Link
JP (1) JP3100182B2 (en)

Also Published As

Publication number Publication date
JPH04338168A (en) 1992-11-25

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