JP3113149B2 - Electron beam generator and image forming apparatus using the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam generating apparatus and an image forming apparatus such as an image display apparatus using the same, and more particularly to an electron beam generating apparatus and an image forming apparatus having a large number of surface conduction electron-emitting devices. About.

[0002]

2. Description of the Related Art Conventionally, two types of electron-emitting devices, a thermionic electron source and a cold-cathode electron source, are known, and an image forming apparatus using these electron sources is also known.

FIG. 17 shows an example of a flat-type image forming apparatus using a thermionic electron source. FIG.
FIG. 2 is a schematic configuration diagram of a conventional image forming apparatus using a thermoelectron source. The image forming apparatus includes a plurality of anodes 1502 disposed in parallel on an insulating support 1501 and having a surface coated with a member (phosphor) that emits light by electron beam impact;
A plurality of filaments 1503 arranged in parallel and opposite to each other, an anode 1502 and a filament 1503
And a plurality of grids 1504 arranged orthogonal to the anode 1502 and the filament 1503,
The anode 1502, the filament 1503, and the grid 1504 are held in a transparent container 1505. The container 1505 is hermetically bonded (hereinafter, referred to as “sealing”) to the insulating support 1501 so that a vacuum inside the container 1505 can be maintained, and the inside of the envelope formed by the container 1505 and the insulating support 1501 The vacuum is maintained at about ^-6 Torr.

The filament 1503 emits electrons by being heated in a vacuum, and by applying an appropriate voltage to the grid 1504 and the anode 1502, the electrons emitted from the filament 1503 collide with the anode 1502, and The phosphor applied on 1502 emits light. A row of anodes 1502 (X direction) and a row of grids 1504 (Y
By performing matrix addressing of (direction), the position of light emission can be controlled, and an image can be displayed through the container 1505.

However, an image forming apparatus using a thermionic electron source has the following disadvantages. (2) Since the modulation speed is slow, it is difficult to display a large capacity. (3) Variations between elements are likely to occur, and the structure is complicated, so that it is difficult to enlarge the screen. There is a problem.

Therefore, an image forming apparatus using a cold cathode electron source instead of a thermionic electron source has been considered.

A field emission type (hereinafter referred to as FE) is used as a cold cathode electron source.
Type), metal / insulating layer / metal type (hereinafter, referred to as MIM type), surface conduction electron-emitting device (hereinafter, referred to as SCE), and the like.

As an example of the FE type, WPDyke & WWDol
an, "Field emission", Advance inElectron Physics,
8, 89 (1956), or CASPindt, "PHYSICAL Propert
iesof thin-film field emission cathodes with moybd
enium coces ", J. Appl. Phys., 47, 5248 (1976).

As an example of the MIM type, CAMead, "Opera
tion of Tunnel-emission Devices ", J.Appl.Phys., 3
2, 646 (1961) and the like are known.

[0010] Examples of SCE include MIElinson, Radio
Eng. Electron Phys., 10, (1965). SCE
Utilizes a phenomenon in which electron emission occurs when a current flows in a small-area thin film formed on a substrate in parallel with the film surface. Examples of the SCE include those using the SnO ₂ thin film by Elinson et al., Those using an Au thin film [G. Dittmer: “Thin Solid Films”, 9, 317 (1972)], I.
n ₂ O ₃ / SnO ₂ thin film [M. Hartwell and C.
G. Fonstad: "IEEE Trans. ED Conf.", 519 (1975)], using a carbon thin film [Hisashi Araki et al .: Vacuum, Vol. 26,
No. 1, p. 22 (1983)].

As a typical device configuration of these surface conduction electron-emitting devices, FIG. 18 shows a device configuration based on the above-mentioned M. Hartwell document. In FIG.
On the insulating substrate 2011, a thin film 2012 for forming an electron-emitting portion serving as an element electrode is formed. The electron-emitting portion forming thin film 2012 is formed of a metal oxide film or the like formed by sputtering in an H-shaped pattern, and the electron-emitting portion 2023 is formed by an energization process called forming described later. In addition, a portion of the thin film 2012 for forming an electron emitting portion, which includes the electron emitting portion 2023, is referred to as a thin film 2018 including an electron emitting portion.

Conventionally, in these surface conduction electron-emitting devices, before electron emission, the electron-emitting portion forming thin film 2012 is generally formed with an electron-emitting portion 2023 by an energization process called forming in advance. Met. That is, forming means that a voltage is applied to both ends of the electron-emitting-portion-forming thin film 2012 to locally destroy or alter the electron-emitting-portion-forming thin film 2012, and to change the electron-emitting portion 2023 in an electrically high-resistance state. It is to form. In the electron-emitting portion 2023, a crack is generated in a part of the thin film 2012 for forming an electron-emitting portion, and electrons are emitted from the vicinity of the crack. Hereinafter, an electron emitting portion forming thin film 2012 including an electron emitting portion formed by forming.
Is referred to as a thin film 2018 including an electron-emitting portion. The surface-conduction type electron-emitting device that has been subjected to the forming process is configured to apply a voltage to the thin film 2018 including the above-described electron-emitting portion and to cause a current to flow through the device, thereby causing the above-described electron-emitting portion 2023 to emit electrons. .

For example, an image forming apparatus using this type of electron-emitting device includes a support frame including an electron source provided with an electron-emitting device and an image-forming member having a phosphor or the like which emits light by collision of electrons. It is known that the inside of an envelope composed of the electron source, the image forming member, and the support frame is evacuated. The image forming member is provided with an accelerating electrode for accelerating the electrons emitted from the electron source toward the image forming member, and the emitted electrons are directed to the image forming member by applying a high voltage to the accelerating electrode. To accelerate and collide with the image forming member. Further, in an image forming apparatus using a flat envelope such as a thin image display device, a support column (spacer) may be used as an atmospheric pressure resistant structure.

An example in which a large number of SCEs are arranged is an electron source in which SCEs are arranged in parallel and a large number of rows in which both ends of each element are connected by wiring are arranged (for example, JP-A-1-313332). No.).

[0015]

As a method of realizing an image forming apparatus using an SCE with a simpler configuration, the present applicant has proposed a method of forming an SCE using a plurality of row-direction wirings and a plurality of column-direction wirings. By connecting a pair of element electrodes facing each other, a simple matrix type electron source in which a large number of SCEs are arranged in a matrix is configured, and appropriate driving signals are given in the row direction and the column direction. A system in which a large number of SCEs are selected and the amount of electron emission can be controlled is considered.

In the study of the image forming apparatus using the simple matrix type SCE electron source, the present inventors have found that the light emission position on the phosphor constituting the image forming member, that is, the arrival position of the electrons and the light emission shape are different from the design values. It has been found that a deviation may occur. In particular, when an image forming member for a color image is used, in some cases, a decrease in luminance and a color shift occur in addition to a shift in the light emitting position. Further, it was confirmed that this phenomenon occurred near a support frame or a support pillar (spacer) disposed between the electron source and the image forming member, or at a peripheral portion of the image forming member.

Accordingly, an object of the present invention is to provide an electron beam generator and an image forming apparatus that stabilize the electron emission trajectory from an electron emitting element and have no deviation in the arrival position of electrons.

[0018]

In order to achieve the above object, an electron beam generator according to the present invention comprises: an electron source provided with an electron emitting element; an electrode opposed to the electron source in a vacuum atmosphere; In an electron beam generating device having an intermediate member disposed between the electron source and the electrode, a surface of the intermediate member causes a current between the electron source and the electrode by a voltage applied to the electrode. Does not flow , or
With a low resistance conductive part that flows very little
A low-resistance conductive portion, comprising a high-resistance conductive portion;
Min. And high resistance conductive parts are in the range of 10 ⁵ -10 ¹² Ω / □
Between the electron source and the electrode.
Are connected in series, and the low-resistance conductive portion is
It is characterized by being arranged on the electron source side .

The intermediate member may have an electric resistance value in the range of 10 ⁵ Ω / □ to 10 ¹² Ω / □, or the intermediate member may be made of an insulating material and provided with a conductive material on the surface. The plurality of conductive portions having the electric resistance may be configured, and the electric resistance of the surface of the intermediate member may be the smallest at the end on the electron source side.

Further, a support frame forming a part of an envelope for maintaining a vacuum atmosphere between the electron source and the electrode, and an atmospheric pressure resistant structure installed between the electron source and the electrode And
It may be a column supporting an electrode disposed between the electron source and the electrode.

The electron-emitting device may be a cold cathode type electron-emitting device, and in particular, a surface conduction type electron-emitting device may be used.

In this case, a plurality of the surface conduction electron-emitting devices are arranged in a two-dimensional matrix, and each of the surface conduction electron-emitting devices is constituted by a plurality of row wirings and a plurality of column wirings. May be connected to each other.

An image forming apparatus according to the present invention uses the electron beam generating apparatus according to the present invention, and a member on which an image is formed by colliding electrons emitted from the electron-emitting devices, instead of the electrodes, and The image forming member is provided with an accelerating electrode for accelerating the electrons emitted from the electron-emitting device.

[0024]

The present inventors have made intensive studies and have found that the above problem is caused by electrons emitted from an electron source.

The electrons emitted from the electron source collide not only with the phosphor as the image forming member but also with a low probability of collision with the residual gas in vacuum. Some of the scattering particles (ions, secondary electrons, neutral particles, etc.) generated with a certain probability at the time of these collisions collide with the exposed portion of the insulating material in the device,
It was found that the exposed portion was charged. It is considered that, due to this charging, the electric field changed near the exposed portion, causing a shift in the electron trajectory, causing a change in the light emission position and light emission shape of the phosphor.

Further, from the state of the change of the light emitting position and the shape of the phosphor, it was found that mainly the positive charges were accumulated in the exposed portion. This may be caused by the case where the positive ions of the scattering particles are attached and charged, or the case where the positive charging is caused by secondary electron emission generated when the scattering particles collide with the exposed portion.

The operation of the means for solving the above-mentioned problems will be described below.

In the electron beam generator of the present invention configured as described above, electrons are emitted from the electron-emitting device of the electron source, and when colliding with the electrodes, positive ions are generated from the electrodes. In addition, the electrons may collide with the gas between the electron source and the electrode to generate positive ions. These positive ions charge an intermediate member, such as a support frame and an anti-atmospheric structure, disposed between the electron source and the electrode, thereby causing a shift in the trajectory of electrons emitted from the electron-emitting device. However, since the surface of the intermediate member is composed of a plurality of conductive portions having different electric resistance values, at least two of which are electrically connected in series between the electron source and the electrode,
When the intermediate member is charged, electrons flow into the conductive part,
Positive ions are neutralized. As a result, there is no shift in the trajectory of the electrons emitted from the electron-emitting device. Further, the electric resistance of the conductive portion is set to a value such that very little current flows between the electron source and the electrode due to the voltage applied to the electrode .
Thereby , the insulation between the electron source and the electrode is maintained.

As such an electric resistance value, 10 ⁵ -10
^{When the} resistance is set within the range of ¹² Ω / □, the charging of the intermediate member is suppressed more effectively while the insulation between the electron source and the electrode is maintained.

When the intermediate member is made of an insulating member, a plurality of conductive portions having the above-described electric resistance values are formed by providing a conductive material on the surface of the intermediate member.

Furthermore, electrons emitted from the electron-emitting device have a low speed immediately after emission, and are easily affected by an electric field. Therefore, by minimizing the electric resistance value of the surface of the intermediate member at the end on the electron source side, the electrons flowing into the conductive portion are more likely to flow from the electron source side, so that the electrons emitted from the electron-emitting device are The electrification of the portion that easily affects the orbit is effectively neutralized.

The present invention uses a simple matrix type electron source in which a large number of SCEs are arranged in a matrix by connecting the SCEs with a plurality of row direction wirings and a plurality of column direction wirings. It is suitable for an electron beam generator.
The above-mentioned simple matrix type electron source can select a large number of SCEs and control the amount of electron emission by giving appropriate drive signals in the row direction and the column direction, so that basically other control electrodes are added. There is no necessity, and it can be easily configured on one substrate.

Of course, the present invention applies the above-described concept to each space between the additional structures even when there is some additional structure (for example, a focusing electrode or a deflection electrode) between the electron source and the electrode. The same effect is provided by determining the configuration of the plurality of electrodes provided on the support member. Furthermore, the present invention can be applied to a case where the additional structure also serves as a part of the plurality of electrodes.

In the image forming apparatus of the present invention, an image is formed by arranging an electron source instead of the electrode used in the electron beam generating apparatus of the present invention and colliding with electrons emitted from the electron-emitting device. And the image forming member provided with an accelerating electrode for accelerating the electrons emitted from the electron-emitting device, the orbit of the electrons emitted from the electron-emitting device is stabilized as described above. As a result, a good image with no shift in the light emission position is formed.

[0035]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An image forming apparatus according to the present invention basically includes a multi-electron beam source having a large number of cold cathode elements arranged on a substrate in a thin vacuum vessel and an image formed by irradiating an electron beam. An image forming member to be formed is provided facing the image forming member.

The cold cathode devices can be precisely positioned and formed on the substrate by using a manufacturing technique such as photolithography or etching, so that a large number of cold cathode devices can be arranged at minute intervals. Moreover, CR
Compared with the hot cathode used in T and the like, the cathode itself and its peripheral portion can be driven at a relatively low temperature, so that a multi-electron beam source with a finer arrangement pitch can be easily realized.

The present invention relates to an image forming apparatus using the above-mentioned cold cathode device as a multi-electron beam source.

A particularly preferred cold cathode device is a surface conduction electron-emitting device (SCE).
That is, the MIM type element needs to control the thickness of the insulating layer and the upper electrode relatively accurately, and the FE type element needs to precisely control the tip shape of the needle-like electron emitting portion.
For this reason, these elements have a relatively high manufacturing cost, and it is sometimes difficult to manufacture a large-area element due to limitations in the manufacturing process.

On the other hand, the SCE has a simple structure and is easy to manufacture, and a large-area SCE can be easily manufactured. In recent years, especially in a situation where a large-screen and inexpensive display device is required, it can be said that the cold-cathode element is particularly suitable.

FIG. 15 shows a typical configuration of the SCE. FIG. 15 is a diagram showing a typical element configuration of the SCE. That is, as shown in FIG.
A pair of device electrodes 1016 and 1017 are provided, and a thin film 1018 of a metal oxide or the like (hereinafter, referred to as “electron emission portion forming thin film”) is formed so as to connect these electrodes 1016 and 1017. Is locally destroyed or deteriorated by an energization process called forming to form an electron-emitting portion 1023.

Next, a method of manufacturing the electron-emitting device shown in FIG.
The outline will be described with reference to 8139 using the manufacturing process diagram of FIG. Note that the following steps a to c are performed in FIG.
This corresponds to (c).

Step a: After sufficiently washing the insulating substrate 1011 with a detergent, pure water and an organic solvent, depositing an element electrode material by a vacuum evaporation method, a sputtering method, or the like, and then, on the surface of the insulating substrate 1011 by a photolithography technique. Next, device electrodes 1016 and 1017 are formed.

As the insulating substrate 1011, quartz glass, glass having a reduced content of impurities such as Na, soda lime glass, and SiO ₂ formed on a soda lime glass by a sputtering method or the like are used.
And a ceramic member such as alumina. Device electrode 1016,
As the material of 1017, any material having conductivity can be used.
metals, such as r, Au, Mo, W, Pt, Ti, Al, Cu, Pd, or alloys, or Pd, Ag, Au, Ru
Examples include a printed conductor composed of a metal such as O ₂ or Pd—Ag or a metal oxide and glass, a transparent conductor such as In ₂ O ₃ / SnO ₂ , or a semiconductor conductor material such as polysilicon.

Step b: An organic metal solution is applied between the device electrodes 1016 and 1017 provided on the insulating substrate 1011 and left to form an organic metal thin film. Thereafter, the organic metal thin film is heated and baked, and patterned by lift-off, etching, or the like, to form a thin film 1018 for forming an electron-emitting portion.

The above-mentioned organometallic solution is a solution that easily emits electrons when a voltage is applied, that is, a solution having a low work function and is stable, for example, Pd, Ru, Ag, Au, Ti,
In, Cu, Cr, Fe, Zn, Sn, Ta, W, P
b, Hg, Cd, Pt, Mn, Sc, La, Co, C
e, Zr, Th, V, Mo, Ni, Os, Rh, Ir, and other metals; and an organic compound solution containing an alloy of AgMg, NiCu, Pb, Sn, or the like as a main element.

Here, the description has been made with reference to the application method of the organic metal solution. However, the present invention is not limited to this. For example, vacuum deposition method, sputtering method, chemical vapor deposition method, dispersion coating method, dipping method, spinner method, etc. In some cases.

Step c: A voltage is applied between the device electrodes 1016 and 1017 by a power supply (not shown) to perform the above-described energization process called forming, and to form an electron emission portion on the electron emission portion forming thin film 1018. For thin film 1018
The electron-emitting portion 1023, which is a portion where the structure has changed, is formed. The electron emitting portion 1023 thus formed
The present inventors have observed that is composed of conductive fine particles.

This SCE is applied to the device electrodes 1016 and 101
When a voltage higher than a certain level (threshold voltage) is applied between the electrodes 7, the emission current sharply increases, and the electron emission portion 102
3 is a non-linear element that emits electrons when the voltage is lower than the threshold voltage, and the emission current is hardly detected. S
The emission current of CE can be controlled by the voltage applied between the device electrodes 1016 and 1017, and the emission charge can be controlled by the application time of this voltage.

Further, the present applicant has found that among the SCEs, the one in which the electron-emitting portion or its peripheral portion is formed of a fine particle film is preferable in terms of characteristics or a large area.

Therefore, in the embodiments described below, an image display apparatus using an SCE formed using a fine particle film as a multi-electron beam source will be described as a preferred example of the image forming apparatus of the present invention with reference to the drawings. .

(First Embodiment) FIG. 1 is a partially cutaway perspective view of a first embodiment of an image forming apparatus to which an electron beam generator according to the present invention is applied, and FIG. FIG. 3 is an enlarged cross-sectional view of the vicinity of a spacer of the image forming apparatus according to the first embodiment.

In FIG. 1, an electron source 1 in which a plurality of surface conduction electron-emitting devices (SCEs) 15 are arranged in a matrix is fixed to a rear plate 2. Electron source 1
A face plate 3 as an image forming member having a fluorescent film 7 and a metal back 8 as an accelerating electrode formed on an inner surface of a glass substrate 6 is disposed to face each other via a support frame 4 made of an insulating material. A high voltage is applied between the electron source 1 and the metal back 8 by a power supply (not shown). The rear plate 2, the support frame 4, and the face plate 3 are sealed with each other with frit glass or the like, and the rear plate 2, the support frame 4, and the face plate 3 constitute an envelope 10.

The inside of the envelope 10 is 10 ⁻⁶ Torr.
Since the envelope 10 is maintained at a degree of vacuum, a thin plate-like spacer 5 is provided inside the envelope 10 as an anti-atmospheric structure for the purpose of preventing the envelope 10 from being destroyed due to an atmospheric pressure, an unexpected impact, or the like.
Is provided. The spacers 5 are made of an insulating material. The spacers 5 are arranged in a number necessary to achieve the above-mentioned object and at a necessary interval in parallel with the Y direction.
And the surface of the electron source 1 are sealed with frit glass or the like.

The surface of the spacer 5 is
Are covered with three types of conductive materials 5a, 5b and 5c having different electric resistance values formed on the surface of the substrate. Each conductive material 5
a, 5b and 5c are formed in parallel with the longitudinal direction of the spacer 5, and are electrically connected in series between the electron source 1 and the face plate 3 mutually. The resistance of each of the conductive materials 5a, 5b, 5c gradually increases from the conductive material 5a closest to the electron source 1 to the conductive material 5c closest to the face plate 3.

Hereinafter, each of the above components will be described in detail.

(1) Electron Source 1 FIG. 3 is a plan view of a main part of the electron source of the image forming apparatus shown in FIG. 1, and FIG. 4 is a cross-sectional view of the electron source shown in FIG. FIG.

As shown in FIGS. 3 and 4, an insulating substrate 11 such as a glass substrate
And n Y-directional wirings 13 are electrically separated by an interlayer insulating layer 14 (not shown in FIG. 3) and wired in a matrix. A surface conduction electron-emitting device 15 is electrically connected between each X-direction wiring 12 and each Y-direction wiring 13. Each electron-emitting device 15 has X
A pair of device electrodes 16 and 17 spaced apart in the direction
And a thin film 18 for forming an electron emission portion that connects the device electrodes 16 and 17, and one of the device electrodes 16 and 17 is a contact hole formed in the interlayer insulating layer 14. The other element electrode 17 is electrically connected to the Y-directional wiring 13 via the wiring 14a. Each of the element electrodes 16 and 17 is made of a conductive metal or the like, and is formed by a vacuum deposition method, a printing method, a sputtering method, or the like.

The size and thickness of the insulating substrate 11 depend on the number of electron-emitting devices 15 installed on the insulating substrate 11, the design shape of each device, and a part of the container when the electron source 1 is used. When it is configured, it is appropriately set depending on conditions for maintaining the container in a vacuum.

Each X-direction wiring 12 and each Y-direction wiring 13
Are made of a conductive metal or the like formed in a desired pattern on the insulating substrate 11 by a vacuum deposition method, a printing method, a sputtering method, or the like, and a voltage as uniform as possible is supplied to a large number of electron-emitting devices 15. Thus, the material, the film thickness, and the wiring width are set. The interlayer insulating layer 14 is made of SiO ₂ or the like formed by a vacuum deposition method, a printing method, a sputtering method, or the like, and is formed in a desired shape on the entire surface or a part of the insulating substrate 11 on which the X-directional wiring 12 is formed. In particular, the X-direction wiring 12
To withstand the potential difference at the intersection of the
The thickness, material, and manufacturing method are appropriately set.

The X-direction wiring 12 is electrically connected to a scanning signal generating means (not shown) for applying a scanning signal for arbitrarily scanning a row of the electron-emitting devices 15 arranged in the X-direction. ing. On the other hand, the Y-direction wiring 13 is electrically connected to a modulation signal generating means (not shown) for applying a modulation signal for arbitrarily modulating each column of the electron-emitting devices 15 arranged in the Y direction. . Here, the drive voltage applied to each electron-emitting device 15 is supplied as a difference voltage between the scanning signal and the modulation signal applied to the device.

Here, an example of a method of manufacturing the electron source 1 will be specifically described with reference to FIGS. Note that the following steps a to h correspond to (a) to (h) in FIG.

Step a: A 50 angstrom thick Cr film and a 6000 angstrom thick Cr film are formed by vacuum deposition on an insulating substrate 11 in which a 0.5 μm-thick silicon oxide film is formed on a cleaned blue glass by sputtering. After sequentially laminating Au, photoresist (AZ1370 Hoechst) was spin-coated with a spinner and baked.
The photomask image is exposed and developed to form a resist pattern for the X-directional wiring 12, and the Au / Cr deposited film is wet-etched to form the X-directional wiring 12 having a desired shape.

Step b: Next, an interlayer insulating layer 14 made of a silicon oxide film having a thickness of 1.0 μm is deposited by RF sputtering.

Step c: A photoresist pattern for forming a contact hole 14a is formed in the silicon oxide film deposited in step b, and the photoresist pattern is used as a mask to form a photoresist pattern.
Is etched to form a contact hole 14a.
Etching is performed using RIE (Rea) using CF ₄ and H ₂ gas.
active ion etching) method.

Step d: Thereafter, a pattern to be a gap between the device electrodes and the device electrode is formed by a photoresist (RD-20).
00N-41 manufactured by Hitachi Chemical Co., Ltd.), and a 50 Å thick Ti and a 1000 Å thick Ni were sequentially deposited by a vacuum evaporation method. The photoresist pattern is dissolved with an organic solvent, the Ni / Ti deposited film is lifted off, and the device electrode 1 having a device electrode interval L1 (see FIG. 3) of 3 μm and a device electrode width W1 (see FIG. 3) of 300 μm.
6 and 17 are formed.

Step e: After forming a photoresist pattern of the Y-direction wiring 13 on the device electrodes 16 and 17,
0 angstrom Ti and 5000 angstrom thick Au are sequentially deposited by vacuum evaporation, unnecessary portions are removed by lift-off, and a Y-directional wiring 1 having a desired shape is formed.
Form 3

Step f: As shown in FIG. 6, a pair of element electrodes 16 and 17 located at an interval L1 between the element electrodes.
A Cr film 21 having a thickness of 1000 Å is deposited and patterned by vacuum deposition using a mask 20 having an opening 20a that straddles the organic Pd (ccp).
4230 Okuno Pharmaceutical Co., Ltd.) was spin-coated with a spinner and heated and baked at 300 ° C. for 10 minutes.

The electron emitting portion forming thin film 18 made of fine particles containing Pd as a main element thus formed has a thickness of about 100 Å and a sheet resistance of 5 × 10 ^4.
Ω / □. In addition, the fine particle film described here is a film in which a plurality of fine particles are aggregated.
Not only a state in which the fine particles are individually dispersed and arranged, but also a film in which the fine particles are adjacent to each other or overlapped (including an island shape), and the particle size is a fine particle whose particle shape can be recognized in the above state. About diameter.

Step g: Cr film 21 with acid etchant
Was removed to form an electron-emitting-portion-forming thin film 18 having a desired pattern shape.

Step h: A pattern is formed such that a resist is applied to portions other than the contact hole 14a, and 50 Å thick Ti and 500 thick are formed by vacuum evaporation.
0 Å of Au was sequentially deposited. Unnecessary portions were removed by lift-off to fill the contact holes 14a.

Through the above steps, the X-directional wiring 12, the Y-directional wiring 13, and the electron-emitting devices 15 are formed and arranged two-dimensionally at equal intervals on the insulating substrate 11.

Then, the envelope 10 (see FIG. 1) is evacuated by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, the external terminals Dox1 to Doxm and Dx1
A voltage is applied between the device electrodes 16 and 17 of the electron-emitting device 15 through oy1 to Doyn, and the electron-emitting-portion forming thin film 18 is locally energized by applying current (forming process). The electron emission portions 23 (see FIG. 4) are formed on the thin film 18 for forming electron emission portions by breaking. For example, as forming processing, 10 ^-6 To
Under a vacuum atmosphere of rr, a pulse width T ₁ as shown in FIG.
There one millisecond peak value of triangular wave (the peak voltage for the forming) is 5V, 10 ms for 60 seconds at a pulse interval T ₂ of the electron emitting portion formation thin film 18 by energizing between the device electrodes 16 and 17 The electron-emitting portion 23 can be formed in the area.

The surface conduction type electron-emitting device 15 as described above
FIG. 8 shows the characteristics of. As can be seen from the graph of FIG.
A pair of device electrodes 16 and 17 constituting the electron-emitting device 15
The emission current Ie is not detected until the voltage Vf applied to the power supply exceeds a certain value (threshold) Vth, but when the voltage Vf exceeds Vth (for example, 8 V), the emission current Ie is detected. That is, by applying a voltage equal to or higher than the threshold voltage between the device electrodes 16 and 17, electrons are emitted from the electron emission portion 23.

For example, suppose that the electron-emitting devices 15 are arranged in a 6 × 6 matrix, and their element numbers are represented by D (X, Y). When forming an image, a method is used in which an image is formed in a line order with one line parallel to the X axis as a unit. In order to drive the electron-emitting device 15 corresponding to one line of the image, a voltage of 0 V is applied to the terminal of the row corresponding to the display line among X = 1 to 6, and 7 V is applied to the other terminals.
Is applied. In synchronization with this, one of the columns of Y = 1 to 6 that emits light, for example, 1
When a voltage of 4 V is applied, electrons are emitted. At this time,
A voltage of 7 V or 0 V is applied to the other electron-emitting devices 15, but since this voltage is lower than the threshold voltage, no electrons are emitted. In the above description, a 6 × 6 matrix is used. However, in practice, a pixel having a much larger number of pixels is used, and in such a case, the device operates on the same principle.

The electrons emitted from the electron-emitting device 15 have a velocity that goes from the negative electrode side of the device electrodes 16 and 17 to the positive electrode side. Since the velocity of the electrons immediately after the emission is low, the emitted electrons need to be accelerated toward the face plate 3 in order to cause the electrons to collide with the inner surface of the face plate 3. Therefore, as shown in FIG. 9, electrons are accelerated toward the metal back 8 by applying a high voltage (acceleration voltage) of several kV or more between the metal back 8 and the metal back 8. Thereby, the accelerated electrons are transferred to the electron-emitting device 15.
It flies along a parabolic trajectory toward the element electrode 16 on the positive electrode side with respect to a normal line from the electron emission portion 23 to the surface on which is formed.

(2) Fluorescent Film 7 The fluorescent film 7 is composed of only a phosphor in the case of monochrome, but is a phosphor of three primary colors (R, G, B) or the like as shown in FIG. 7a,
A grid-shaped black conductor 7b is arranged so as to surround each phosphor 7a. This black conductor 7b makes the mixed color inconspicuous by making the painted portions between the phosphors 7a black,
The purpose is to suppress a decrease in contrast due to reflection of external light on the fluorescent film 7. As a material of the black conductor 7b,
In addition to commonly used materials mainly containing graphite, any material having conductivity and low light transmission and reflection can be used. The method of applying the phosphor on the glass substrate 6 is not limited to monochrome or color, and a precipitation method or a printing method is used.

In this embodiment, the width of the black conductor 7b is set to 20
0 μm, the size of each phosphor 7a is about 600 μm × 200 μm.
m, and the pixel pitch was 800 μm × 400 μm. In FIG. 10, the arrangement of R, G, and B of the phosphor 7a is linear, but is not limited to this.

(3) Metal Back 8 The purpose of the metal back 8 is to improve the brightness by mirror-reflecting the light toward the inner surface side of the light emitted from the fluorescent film 7 toward the face plate 3 and to reduce the electron beam acceleration voltage. Acting as an accelerating electrode for applying, phosphor 7a from damage due to collision of negative ions generated in envelope 10
Protection. The metal back 8 can be manufactured by performing a smoothing process (usually called filming) on the inner surface of the fluorescent film 7 after manufacturing the fluorescent film 7 and then depositing Al by vacuum evaporation or the like. The face plate 3 may be provided with a transparent electrode (not shown) such as ITO between the fluorescent film 7 and the glass substrate 6 in order to further enhance the conductivity of the fluorescent film 7, but only the metal back 8 is sufficient. It is not always necessary when high conductivity is obtained.

(4) Envelope 10 The envelope 10 is connected to an exhaust pipe (not shown) and is connected to a pressure of 10 ⁻⁶ Torr.
After a degree of vacuum is applied, it is sealed. Therefore, the rear plate 2, the face plate 3, and the support frame 4 constituting the envelope 10 can withstand the atmospheric pressure applied to the envelope 10, maintain a vacuum atmosphere, and maintain the electron source 1 and the metal back 8.
It is desirable to use a material having an insulating property enough to withstand a high voltage applied therebetween. As the material, for example, quartz glass, glass having a reduced content of impurities such as Na,
Blue sheet glass, ceramic members such as alumina and the like can be mentioned. However, it is necessary to use a face plate 3 having a certain or higher transmittance for visible light. In addition, it is preferable to combine the members whose thermal expansion coefficients are close to each other.

Since the rear plate 2 is provided mainly for the purpose of reinforcing the strength of the electron source 1, if the electron source 1 itself has a sufficient strength, the rear plate 2 is unnecessary, and is directly connected to the electron source 1. The support frame 4 may be sealed, and the envelope 10 may be configured by the electron source 1, the support frame 4, and the face plate 3.

Further, in order to maintain the degree of vacuum after the envelope 10 is sealed, getter processing may be performed. this is,
Immediately before or after sealing of the envelope 10, a getter disposed at a predetermined position (not shown) in the envelope 10 is heated by resistance heating, high-frequency heating, or the like to form a deposition film. Processing. A getter typically contains Ba is a main component, the adsorption effect of the vapor deposition film, for example, 1 × 10 ^-5
It maintains a degree of vacuum of about 1 × 10 ⁻⁷ Torr.

(5) Spacer 5 The spacer 5 may be any spacer as long as it has an insulating property enough to withstand a high voltage applied between the electron source 1 and the metal back 8. For example, quartz glass, glass with a reduced content of impurities such as Na, blue plate glass, and ceramic members such as alumina may be used. However, it is preferable that the thermal expansion coefficient be close to that of the member forming the envelope 10.

As shown in FIG. 2, the spacer 5 is arranged along the black conductor 7b of the fluorescent film 7 and the Y-directional wiring 13, so as not to hinder the emission of the fluorescent material 7a. , Each conductive material 5a, 5b, 5c
Are electrically connected in series between the metal back 8 of the face plate 3 and the electron source 1. In the present embodiment, glass having a thickness of 400 μm is used in consideration of the atmospheric pressure received by the envelope 10 and the matching of the coefficient of thermal expansion with other members.
a was arranged every 10 rows.

For each of the conductive materials 5a, 5b and 5c, an SnO ₂ film formed by an ion plating method is used, and the respective resistance values are changed by changing the thickness of the film and the conditions at the time of film formation. I have. Each conductive material 5a, 5
The resistance values of b and 5c are such that no current flows between the electron source 1 and the metal back 8 through the conductive materials 5a, 5b and 5c due to the high voltage applied between the electron source 1 and the metal back 8. A relatively high resistance value is required, and it is preferable that the sheet resistance value be in the range of 10 ⁵ to 10 ¹² Ω / □. Specifically, the conductive material 5a closest to the electron source 1 is formed to a thickness of 5000 Å in an oxygen atmosphere, and the conductive material 5b closest to the electron source 1 is formed to a thickness of 3000 Å in an argon oxygen atmosphere. The conductive material 5c farthest from the electron source 1 was formed in a thickness of 1000 angstroms in an argon atmosphere. The sheet resistance values thus obtained are 10 ⁷ , 10 ⁹ , and 10 ⁷ , respectively, in order from the conductive material 5a close to the electron source 1.
It was 10 ¹¹ Ω / □.

Next, a function which is a feature of this embodiment will be described with reference to FIG. FIG. 11 is a sectional view seen from the Y direction for explaining a series of operations of the image forming apparatus shown in FIG.

When a voltage is applied to the electron-emitting device 15 through the external terminals Dx1 to Dxm and Dy1 to Dyn, electrons are emitted from the electron-emitting portion 23. At the same time the metal back 8 (or a transparent electrode (not shown)) several kV or more high voltage through the high-voltage terminal H _V (hereinafter, referred to as "acceleration voltage") is applied to accelerate electrons emitted from the electron emission regions 23 And the inner surface of the face plate 3. As a result, the phosphor 7a of the fluorescent film 7 is excited and emits light, and an image is displayed (FIG. 11A).

When the electrons collide with the inner surface of the face plate 3, the light emission phenomenon of the phosphor 7a and the phosphor film 7
And the metal back 8 generates positive ions. Further, electrons may collide with the residual gas in the space to generate positive ions. In particular, positive ions generated in the vicinity of the spacer 5 adhere to the surface of the spacer 5 (FIG. 11B).

When the positive ions adhere to the spacer 5, the spacer 5 is charged, and the electric field around the spacer 5 is disturbed.
As a result, the trajectory of the electrons emitted from the electron-emitting device 15 near the charged spacer 5 shifts and collides with a position different from the position where the electron should originally collide, resulting in luminance loss and color misregistration (FIG. 11 (c)).

However, the surface of the spacer 5 is covered with the conductive material 5a, 5b, 5c formed so as to increase the resistance stepwise from the electron source 1 side as described above.
Since it is easy for electrons to flow from the electron source 1 side,
When the positive ions adhere to the spacer 5, the conductive materials 5a, 5a
Electrons flow into b and 5c. The electrons neutralize the positive ions attached to the spacer 5 and suppress the charging of the spacer 5 ((d) of FIG. 11).

As a result, it is possible to maintain stable electron emission from the electron-emitting device 15 without deviation of the flight trajectory, and to obtain a clear image without loss of luminance or color deviation.
In particular, as described above, electrons immediately after being emitted from the electron-emitting device 15 have a low speed and are easily affected by an electric field.
By lowering the resistance value of the conductive material 5a, 5b, 5c which is closest to the electron source 1, electrons easily flow from the electron source 1 side, and the electron source 1 side, which easily affects the electrons immediately after emission, The effect of suppressing charging is great. Further, the resistance value of each of the conductive materials 5a, 5b, 5c is the highest and the sheet resistance value is as large as 10 ¹¹ Ω / □, so that the insulation between the electron source 1 and the face plate 3 is maintained. .

Normally, the applied voltage between the pair of device electrodes 16 and 17 is about 12 to 16 V, and the metal back 8 and the electron source 1
And the voltage (acceleration voltage) applied to the metal back 8 through the high voltage terminal Hv is 1 kV.
About 10 kV. In the present embodiment, the device electrodes 16,
17 between 14 V, metal back 8 and electron source 1
And the applied voltage to the metal back 8 is 6k.
V.

The configuration described above is a schematic configuration necessary for manufacturing a suitable image forming apparatus used for image display and the like. For example, detailed parts such as materials and arrangement of each member are limited to the above-described contents. Rather, it is appropriately selected so as to be suitable for the use of the image forming apparatus.

Further, in the present embodiment, an example has been described in which the spacers are arranged along the Y-direction wiring, but they may be arranged along the X-direction wiring.

(Second Embodiment) FIG. 12 is a partially broken perspective view of a second embodiment of the image forming apparatus of the present invention. In this embodiment, the support frame is prevented from being charged. Therefore, as shown in FIG. 12, the inner surface of the support frame 104 is covered with three types of conductive materials 104a, 104b, and 104c formed on the inner surface of the support frame 104 and having different electric resistance values. Each conductive material 104a, 104b, 10
4c are formed along the X direction or the Y direction, respectively.
They are electrically connected in series between the electron source 101 and the face plate 103. In addition, each conductive material 1
04a, 104b, and 104c have the highest electron source 1 resistance.
The conductive material 104a on the 01 side is gradually increased from the conductive material 104c on the face plate 103 side.

Each conductive material 104a, 104b, 104
c is Sn formed by the ion plating method.
An O ₂ film is used, and each resistance value is changed by changing the thickness of the film. Each conductive material 104a, 104
The resistance values of the conductive materials 104 b and 104 c are set by the high voltage applied between the electron source 101 and the metal back 108.
a, a relatively high resistance value that does not allow a current to flow between the electron source 101 and the metal back 108 through the electrodes 104b, 104c is required, and the sheet resistance value is 10 ⁵ to 10 ¹² Ω. / □ is preferred. Specifically, the conductive material 104a closest to the electron source 101
In order from 10 ⁶ , 10 ⁸ , 10 ¹⁰ Ω / □.

In this embodiment, as in the first embodiment, the spacer 105 is provided as an atmospheric pressure resistant structure. However, if the face plate 103 itself has sufficient strength,
The spacer 105 is not always necessary. The other configuration is the same as that of the first embodiment, and the description is omitted.

Next, a function which is a feature of this embodiment will be described with reference to FIG. FIG. 13 is a sectional view seen from the Y direction for explaining a series of operations of the image forming apparatus shown in FIG.

The external terminal Dx1 is connected to the electron-emitting device 115.
When a voltage is applied through Dxm and Dy1 to Dyn, electrons are emitted from the electron emission portion of the electron emission element 115. At the same by applying an acceleration voltage of several kV or more through a high-voltage terminal H _V to accelerate electrons emitted from the electron emission portion to the metal back 108 (or a transparent electrode (not shown)) at the same time, to impinge on the inner surface of the face plate 103.
As a result, the phosphor 107a of the fluorescent film 107 is excited to emit light, and an image is displayed (FIG. 13A).

When the electrons collide with the inner surface of the face plate 103, the light emission phenomenon of the phosphor 107a
Positive ions are generated from the fluorescent film 107 and the metal back 108. Further, electrons may collide with the residual gas in the space to generate positive ions. In particular, positive ions generated near the support frame 104 adhere to the surface of the support frame 104 (FIG. 13B).

When the positive ions adhere to the support frame 104, the support frame 104 is charged, causing a disturbance in the surrounding electric field. As a result, the trajectory of the electrons emitted from the electron-emitting device 115 near the charged support frame 104 is shifted and collides with a position different from the position where the electron should originally collide, resulting in luminance loss and color shift ( FIG. 13 (c)).

However, as described above, the inner surfaces of the support frame 104 are formed from the conductive materials 104a, 104b, 10b formed from the electron source 101 side so as to increase the resistance stepwise.
4c, the electrons easily flow from the electron source 101 side. Therefore, when positive ions adhere to the support frame 104, the electrons flow into the conductive materials 104a, 104b, 104c, and the charging of the support frame 104 is suppressed. (Figure 1
1 (d)).

As a result, the electron emission element 115
It is possible to maintain stable electron emission without a flight trajectory shift, and to obtain a clear image without loss of luminance or color shift. In particular, as described above, electrons immediately after being emitted from the electron-emitting device 115 have a low speed and are easily affected by an electric field. Therefore, among the conductive materials 104a, 104b, and 104c, the resistance of the material closest to the electron source 101 is set to The lowering makes it easier for electrons to flow from the electron source 101 side, and has a great effect of suppressing the charge on the electron source 101 side, which easily affects the electrons immediately after emission. Further, each conductive material 104a, 1
Since the sheet resistances of the elements 04b and 104c are the highest and the sheet resistance is as large as 10 ¹⁰ Ω / □, the insulation between the electron source 101 and the face plate 103 is maintained.

Further, when this embodiment and the first embodiment are combined, it is possible to suppress the charging of both the spacer 105 and the support frame 104.

In each of the above-described embodiments, the example in which the resistance value of the conductive material covering the spacer and the support frame is divided into three levels is described. However, the resistance value may be divided into three or more levels or two levels as necessary. Alternatively, it may be changed not stepwise but smoothly. Also, the conductive material is not limited to SnO ² ,
Other materials may be used.

The intermediate member is not limited to a spacer or a support frame, but may be a plate-like, mesh-like, rod-like, polarizing electrode, or the like.
It may be a column for fixing an extraction electrode, a control electrode or the like between the face plate and the rear plate. Furthermore, these intermediate members do not necessarily need to be made of an insulating material, and the intermediate members themselves can be made of a conductive material as long as they have the above-described resistance value.

(Third Embodiment) FIG. 14 shows an image display apparatus constructed so that image information provided from various image information sources such as a television broadcast can be displayed on the image forming apparatus of the present invention. It is a figure for showing an example of.
When the present display device receives a signal containing both video information and audio information, such as a television signal, it naturally reproduces the audio simultaneously with the display of the video. Descriptions of circuits, speakers, and the like related to reception, separation, reproduction, processing, storage, and the like of audio information that are not directly related to the above are omitted.

Hereinafter, each part will be described along the flow of the image signal.

First, the TV signal receiving circuit 513 is a circuit for receiving a TV image signal transmitted using a wireless transmission system such as radio waves or spatial optical communication. The format of the received TV signal is not particularly limited, and may be, for example, various systems such as the NTSC system, the PAL system, and the SECAM system. Further, a TV signal (for example, a so-called high-definition TV such as a MUSE system) composed of a larger number of scanning lines is used for a display panel using the image forming apparatus of the present invention, which is suitable for increasing the area and the number of pixels. 50
It is a suitable signal source to take advantage of 0. The TV signal received by the TV signal receiving circuit 513 is
Is output to

The image TV signal receiving circuit 512 is a circuit for receiving a TV image signal transmitted using a wired transmission system such as a coaxial cable or an optical fiber. Similarly to the TV signal receiving circuit 513, the system of the received TV signal is not particularly limited, and the TV signal received by this circuit is also output to the decoder 504.

The image input interface circuit 51
Reference numeral 1 denotes a circuit for capturing an image signal supplied from an image input device such as a TV camera or an image reading scanner. The captured image signal is output to the decoder 504.

The image memory interface circuit 5
Reference numeral 10 denotes a circuit for capturing an image signal stored in a video tape recorder (hereinafter abbreviated as VTR). The captured image signal is output to a decoder 504.

The image memory interface circuit 5
Reference numeral 09 denotes a circuit for capturing an image signal stored in the video disk, and the captured image signal is output to the decoder 504.

The image memory interface circuit 5
Reference numeral 08 denotes a circuit for capturing an image signal from a device storing still image data, such as a so-called still image disk.
Is output to

The input / output interface circuit 505
Is a circuit for connecting the present display device to an output device such as an external computer, a computer network, or a printer. In addition to inputting and outputting image data and character / graphic information, control signals and numerical data can be input and output between the CPU 506 of the display device and the outside in some cases.

The image generation circuit 507 is used for display based on image data and character / graphic information input from the outside via the input / output interface circuit 505, or image data and character / graphic information output from the CPU 506. This is a circuit for generating image data. The circuit includes, for example, a rewritable memory for storing image data and character / graphic information, a read-only memory storing an image pattern corresponding to a character code, and a processor for performing image processing. And circuits necessary for generating an image.

The display image data generated by the image generation circuit 507 is output to the decoder 504. In some cases, the display image data can be output to an external computer network or a printer via the input / output interface circuit 505. .

The CPU 506 mainly performs operations related to operation control of the display device and generation, selection, and editing of a display image.

For example, a control signal is output to the multiplexer 503, and an image signal to be displayed on the display panel is appropriately selected or combined. In this case, a control signal is generated for the display panel controller 502 in accordance with the image signal to be displayed, and the display frequency, the scanning method (for example, interlaced or non-interlaced), and the number of scanning lines on one screen are displayed. The operation of the device is appropriately controlled.

Further, image data and character / graphic information are directly output to the image generation circuit 507, or an external computer or memory is accessed via the input / output interface circuit 505 to access the image data or character / graphic information. Enter

The CPU 506 may, of course, be involved in operations for other purposes. For example, it may be directly related to a function of generating and processing information, such as a personal computer or a word processor.

Alternatively, as described above, the computer may be brought into contact with an external computer network via the input / output interface circuit 505 to perform operations such as numerical calculations in cooperation with external devices.

The input unit 514 is for the user to input commands, programs, data, and the like to the CPU 506.
Various input devices such as a joystick, a barcode reader, and a voice recognition device can be used.

The decoder 504 includes the image generation circuit 5
07 to various signal signals input from the TV signal receiving circuit 513 are converted into three primary color signals, or a luminance signal and an I signal, and a Q signal.
This is a circuit for inversely converting to a signal. It is preferable that the decoder 504 includes an internal image memory as shown by a dotted line in FIG. This is for handling television signals that require an image memory when performing inverse conversion, such as the MUSE method. Further, the provision of the image memory facilitates display of a still image, or facilitates image processing and editing including image thinning, interpolation, enlargement, reduction, and synthesis in cooperation with the image generation circuit 507 and the CPU 506. This is because there is an advantage of being able to perform

Further, the multiplexer 503 is connected to the CPU 50.
The display image is appropriately selected based on the control signal input from the control unit 6. That is, the multiplexer 503 selects a desired image signal from the inversely converted image signals input from the decoder 504 and outputs the selected image signal to the drive circuit 501. In that case, by switching and selecting an image signal within one screen display time, it is also possible to divide one screen into a plurality of areas and display different images depending on the areas, as in a so-called multi-screen TV. .

The display panel controller 5
Reference numeral 02 denotes a circuit for controlling the operation of the drive circuit 501 based on a control signal input from the CPU 506.

First, as a signal related to the basic operation of the display panel 500, a signal for controlling an operation sequence of a drive power supply (not shown) of the display panel 500 is output to the drive circuit 501, for example.

As a driving method of the display panel 500, a signal for controlling, for example, a screen display frequency and a scanning method (for example, interlaced or non-interlaced) is output to the driving circuit 501.

In some cases, a control signal relating to image quality adjustment such as brightness, contrast, color tone, and sharpness of a display image may be output to the drive circuit 501.

The drive circuit 501 is a circuit for generating a drive signal to be applied to the display panel 500, based on an image signal input from the multiplexer 503 and a control signal input from the display panel controller 502. It works.

The function of each section has been described above. With the configuration illustrated in FIG. 14, in this display device, image information input from various image information sources is displayed on the display panel 5.
00 can be displayed. That is, various image signals including television broadcasting are transmitted to the decoder 50.
After the inverse conversion in step 4, the signal is appropriately selected in the multiplexer 503 and input to the drive circuit 501. On the other hand, the display controller 502 generates a control signal for controlling the operation of the drive circuit 501 according to an image signal to be displayed. The drive circuit 501 applies a drive signal to the display panel 500 based on the image signal and the control signal. Thus, the display panel 500
Displays an image. A series of these operations is C
It is totally controlled by the PU 506.

In the present display device, the decoder 5
In addition to displaying the image information selected from among a plurality of pieces of image information, the image information to be displayed can be enlarged or reduced by, for example, enlarging or reducing the image information by incorporating the image memory incorporated in the image information 04, the image generation circuit 507, and the CPU 506. Image processing including rotation, movement, edge emphasis, thinning, interpolation, color conversion, image aspect ratio conversion, and image editing including synthesis, deletion, connection, replacement, insertion, etc. It is. In the description of the present embodiment,
Although not particularly mentioned, a dedicated circuit for processing and editing audio information as well as the image processing and image editing may be provided.

Therefore, the present display device is a television broadcast display device, a video conference terminal device, an image editing device that handles still and moving images, a computer terminal device, an office terminal device such as a word processor, a game device, and the like. It is possible to combine the functions of a single machine, etc., and has a very wide range of applications for industrial or consumer use.

FIG. 14 shows only an example of the configuration of a display device using the image forming apparatus according to the present invention.
It goes without saying that the present invention is not limited to this. For example, among the components shown in FIG. 14, circuits relating to functions that are not necessary for the purpose of use may be omitted. Conversely, additional components may be added depending on the purpose of use. For example, when this display device is applied as a video phone, a TV camera, a voice microphone, a lighting device,
It is preferable to add a transmission / reception circuit including a modem to the components.

In the present display device, in particular, since the thickness of the image forming apparatus according to the present invention can be easily reduced, the depth of the display device can be reduced. In addition, since the screen can be easily enlarged, the luminance is high, and the viewing angle characteristics are excellent, the present display device can display an image full of presence and full of power with good visibility.

In the above embodiment, an example in which a surface conduction electron-emitting device is used as an electron-emitting device has been described. However, the present invention is not limited to this. A similar effect can be obtained in terms of the stability of the electron emission orbit. However, considering that the element structure is simple and that a plurality of elements can be easily arranged, it is preferable to use a surface conduction electron-emitting element. This is particularly effective in a large-sized image forming apparatus.

Although the example in which the image forming apparatus of the present invention is applied to an image display apparatus has been described, the present invention is not limited to this range, and the recording apparatus may be used as an image forming light emitting unit of an optical printer. Application to is also possible. In this case, the image forming units arranged one-dimensionally are often used as a normal mode. However, by appropriately selecting the above-described m row-directional wirings and n column-directional wirings, the line-shaped wirings can be formed. It can be applied not only to a light emitting source but also to a two-dimensional light emitting source.

Further, the present invention is not limited to the use of an image forming member having a substance which emits light directly, such as the phosphor used in the above embodiments, but a member capable of forming a latent image by electron charging. If using an image forming member,
The present invention is applicable.

[0138] The electron irradiation object is not specified, and application as an electron beam generator serving as a multi-plane electron source is also possible.

[0139]

Since the present invention is configured as described above, the following effects can be obtained.

According to the electron beam generator of the present invention, the surface of the intermediate member disposed between the electron source and the electrode member is composed of a plurality of conductive portions having different electric resistance values, at least two of which are connected to the electron source. Since the electrodes are electrically connected in series with the electrodes, the electrons flowing into the conductive portions can suppress the charging of the intermediate member. As a result, it is possible to prevent the orbit of the electrons emitted from the electron-emitting device from being shifted. Further, the electrical resistance of the conductive portion, and a value such that no current flows between the electron source and the electrode by a voltage applied to the electrodes
By doing so , insulation between the electron source and the electrode can be maintained.

The electric resistance of the surface of the intermediate member is set to 1 so that no electric current flows between the electron source and the electrode.
When the value is set in the range of 0 ⁵ to 10 ¹² Ω / □, the charging of the intermediate member can be suppressed more effectively while maintaining the insulating property between the electron source and the electrode.

In the case where the intermediate member is made of an insulating member, by providing a conductive material on the surface, a plurality of conductive portions having the above-described electric resistance can be formed on the surface of the intermediate member. .

Furthermore, the electric resistance value of the surface of the intermediate member is
By making it the smallest at the end on the electron source side, it is possible to effectively suppress charging of a portion that easily affects the trajectory of electrons emitted from the electron-emitting device.

In addition, by using a cold cathode type electron-emitting device as the electron-emitting device, it is possible to configure a large-sized electron beam generating device which consumes less power, has a higher response speed. Among them, in particular, the surface conduction electron-emitting device has a simple structure and a large number of devices can be easily arranged. An electron beam generator can be achieved.

Further, by arranging a plurality of surface conduction electron-emitting devices in a two-dimensional matrix and connecting them by a plurality of row wirings and a plurality of column wirings, the row direction and the column By providing an appropriate drive signal in the direction, a large number of surface conduction electron-emitting devices can be selected and the amount of electron emission can be controlled. Therefore, basically, it is not necessary to add another control electrode, and one electron source can be used. It can be easily configured on a single substrate.

Since the image forming apparatus of the present invention uses the electron beam generating apparatus of the present invention, as described above, the trajectory of electrons is stable, and a good image with no shift in the light emission position can be formed. become. In particular, by using a surface conduction electron-emitting device as the electron-emitting device, the structure is simple, and,
A large screen image forming apparatus can be achieved.

[Brief description of the drawings]

FIG. 1 is a partially broken perspective view of a first embodiment of an image forming apparatus according to the present invention.

FIG. 2 is an enlarged perspective view of the vicinity of an electron source of the image forming apparatus shown in FIG.

FIG. 3 is a plan view of a main part of an electron source of the image forming apparatus shown in FIG.

FIG. 4 is a sectional view taken along line AA ′ of the electron source shown in FIG. 3;

FIG. 5 is a view sequentially illustrating a manufacturing process of the electron source of the image forming apparatus illustrated in FIG. 1;

FIG. 6 is a plan view of an example of a mask used when forming a thin film for forming an electron-emitting portion.

FIG. 7 is a diagram showing an example of a voltage waveform used for forming processing.

FIG. 8 is a graph showing a relationship between applied voltage and emission current of the surface conduction electron-emitting device.

FIG. 9 is a diagram for explaining characteristics of the flight of electrons emitted from the surface conduction electron-emitting device.

FIG. 10 is a diagram illustrating a configuration of a fluorescent film.

11 is a diagram for explaining a series of operations of the image forming apparatus shown in FIG.

FIG. 12 is a partially broken perspective view of a second embodiment of the image forming apparatus of the present invention.

13 is a diagram for explaining a series of operations of the image forming apparatus shown in FIG.

FIG. 14 is a block diagram of an example of an image display device using the image forming apparatus of the present invention.

FIGS. 15A and 15B show a typical device configuration of a surface conduction electron-emitting device. FIG. 15A is a plan view thereof, and FIG. 15B is a sectional view taken along line AA ′.

16 is a view sequentially illustrating the manufacturing process of the surface conduction electron-emitting device shown in FIG. 19;

FIG. 17 is a schematic configuration diagram of a conventional image forming apparatus using a thermoelectron source.

FIG. 18 is a plan view of a conventional surface conduction electron-emitting device.

[Explanation of symbols]

1, 101 electron source 2 rear plate 3, 103 face plate 4, 104 support frame 5, 105 spacer 5a, 5b, 5c, 104a, 104b, 104c
Conductive material 6 Glass substrate 7, 107 Phosphor film 7a, 107a Phosphor 7b Black conductor 8, 108 Metal back 10 Enclosure 11 Insulating substrate 12 X-direction wiring 13 Y-direction wiring 14 Interlayer insulating layer 14a Contact hole 15, 115 electron-emitting device 16, 17 device electrode 18 electron-emitting portion forming thin film 20 mask 20a opening 21 Cr film 23 electron-emitting portion 500 display panel 501 drive circuit 502 display panel controller 503 multiplexer 504 decoder 505 input / output interface circuit 506 CPU 507 image Generation circuits 508, 509, 510 Image memory interface circuit 511 Image input interface circuit 512, 513 TV signal receiving circuit 514 Input unit

Continuation of the front page (56) References JP-A-57-88656 (JP, A) JP-A-57-118355 (JP, A) JP-A-63-200440 (JP, A) JP-A-8-508846 (JP) , A) (58) Field surveyed (Int. Cl. ⁷ , DB name) H01J 31/12 H01J 1/30 H01J 29/87 H01J 31/15

Claims (10)

(57) [Claims] 1. An electron having an electron source provided with an electron-emitting device, an electrode opposed to the electron source in a vacuum atmosphere, and an intermediate member disposed between the electron source and the electrode. In the line generator, the surface of the intermediate member is configured so that a current does not flow between the electron source and the electrode due to a voltage applied to the electrode.
Or low resistance with very little flow
Consists of a an electrically conductive portion and a high-resistance conductive portion, said low-resistance conductive portion and a high-resistance conductive portion ¹⁰⁵
It has an electrical resistance value in ~10 ¹² Ω / □ range, the electrodeposition
Connected in series between the source and the electrode,
An electron beam generator, wherein a resistive conductive portion is disposed on the electron source side . 2. The electron beam generator according to claim 1, wherein the intermediate member is made of an insulating material, and a plurality of conductive portions having the electric resistance value are formed by providing a conductive material on the surface. apparatus. 3. The electron beam generator according to claim 1, wherein an electric resistance value on a surface of the intermediate member is smallest at an end on the electron source side. 4. The electron according to claim 1, wherein the intermediate member is a support frame forming a part of an envelope for maintaining a vacuum atmosphere between the electron source and the electrode. Line generator. 5. The apparatus according to claim 1, wherein the intermediate member is an atmospheric pressure resistant structure provided between the electron source and the electrode.
5. The electron beam generator according to 2, 3, or 4. 6. The intermediate member is a support for supporting an electrode disposed between the electron source and the electrode.
An electron beam generator according to any one of claims 1 to 5. 7. The electron beam generator according to claim 1, wherein said electron-emitting device is a cold cathode type electron-emitting device. 8. The electron beam generator according to claim 7, wherein said cold cathode type electron-emitting device is a surface conduction type electron-emitting device. 9. A plurality of the surface conduction electron-emitting devices are arranged in a two-dimensional matrix, and each of the surface conduction electron-emitting devices is formed by a plurality of row-direction wirings and a plurality of column-direction wirings. 9. The electron beam generator according to claim 8, wherein the electron beam generators are connected. 10. An image forming apparatus using the electron beam generator according to claim 1, wherein the electron emitting device is arranged to face the electron source instead of the electrode. An image forming apparatus comprising: a member on which an image is formed by collision of electrons emitted from the electron emitting device; and an image forming member including an accelerating electrode for accelerating electrons emitted from the electron emitting element.