JP3133174B2 - Plasma processing apparatus and plasma processing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus, and more particularly to an apparatus capable of realizing a uniform plasma reaction in a reaction vessel or a reaction chamber.

[0002]

2. Description of the Related Art Conventionally, as a plasma processing apparatus such as a plasma CVD apparatus and a plasma etching apparatus, a structure shown in FIG. 1 is widely known as a typical example. The outline is described below.

[0003] A reaction vessel 1 has a sample 17 having a surface to be processed held on a substrate holder 3 including a heater 4, and is heated by a heater 4 in the substrate holder 3.
The plasma electrode 2 is provided facing the sample 17.
A plasma power supply 9 is connected to the plasma electrode 2 from the outside of the reaction vessel 1 through a feedthrough 11 without breaking the airtightness of the reaction vessel 1, and power is supplied through a matching device 10. Reactive gas, dilution gas, carrier gas, and the like are supplied from the supply system 14, 15, 16 to the inside of the reaction vessel 2 through the plasma electrode 2 via the flow meter 12 and the valve 13. Electric energy supplied from the plasma power source 9 between the plasma electrode 2 and the substrate holder 3 and the inner wall of the reaction vessel 1 generates plasma in the reaction space 19, and the sample 17 is subjected to plasma processing.

[0004] Reactive gas, diluent gas, carrier gas and the like have very high energy when in a plasma state, and collide with an object inside the reaction vessel 1 to strike out unnecessary components from the object. I will. Therefore, a reactive gas, a diluting gas, a carrier gas and the like are always supplied, and unnecessary gas is exhausted via the vacuum pump 7 via the exhaust system 20 and becomes unnecessary in the reaction space. It is necessary to make the element difficult to exist. Such a plasma processing apparatus is usually called a parallel plate type since an electrode and a sample are positioned opposite to each other.

[0005]

In the parallel plate system, the gap between the plasma electrode and the sample facing the plasma electrode is 1 mm to 100 mm.
It is kept to a degree. This is because if the electric field in the plasma discharge region is perpendicular between the plasma electrode and the sample, the electric field lines will bend around the plasma electrode if the distance is too large, so that the movement of electrons is orthogonal to the plasma electrode. Move along the line of electric force without moving, not orthogonal to the electrode,
This is because uniform processing cannot be performed because plasma is generated by the kinetic energy of electrons. In particular, in the vicinity of the plasma electrode, there is a characteristic that the interval between lines of electric force is widened and the electric action is weakened.

That is, there is a difference in the degree of plasma processing of the sample in the plasma discharge region. The wider the distance between the plasma electrode and the sample, the greater the effect around the plasma electrode. However, the smaller the distance, the more the effect is not lost. In order to avoid this, it is common to perform plasma processing while moving the sample in the reaction vessel, but it is difficult to change the moving method once the device design is determined, and the impedance of the space where plasma is generated is always constant. Due to the change, the time until the matching of the matching circuit may not be enough.

Further, since the electrical characteristics of the sample are greatly different between the plasma processing on the glass substrate and the processing on the silicon wafer, a difference appears in the discharge state in the plasma region, and the same uniformity is obtained with the same apparatus. May not be able to process. Furthermore, unlike a planar sample such as a glass substrate or a silicon wafer, it is almost impossible to uniformly process a three-dimensional sample such as a photosensitive drum on the entire processing surface of the sample with the same apparatus. . In many cases, a plasma processing apparatus must be manufactured according to the sample to be subjected to plasma processing, and it is not possible for the completed apparatus to perform uniform processing on the entire processing surface of the sample under various plasma processing pressures and power conditions. It was impossible.

[0008]

[Means for Solving the Problems]

[First invention] A reaction vessel which can be maintained in a reduced pressure state, a means for supplying gas to the reaction vessel, a pair of opposed power supply electrodes, and at least one electrode at a position not parallel to the opposed electrode. Plasma processing equipment.

[Second invention] A reaction vessel which can be maintained in a reduced pressure state, means for supplying gas to the reaction vessel, a pair of opposed power supply electrodes, and at least one electrode at a position not parallel to the opposed electrode. A plasma processing apparatus comprising: an electrode; and means for adjusting power for generating plasma discharge supplied from a power supply to the electrode and the electrode.

[Third invention] A plasma processing apparatus according to claim 2, wherein a matching device is used as the power adjusting means for discharging.

[Fourth invention] [0011] A reaction vessel that can be maintained in a reduced pressure state, a means for supplying gas to the reaction vessel, a pair of opposed power supply electrodes, and at least one electrode located at a position not parallel to the opposed electrode. A plasma processing apparatus comprising: an electrode; and a unit for turning on and off power for generating a plasma discharge supplied from a power supply to the electrode and the electrode.

[Fifth invention] A reaction vessel which can be maintained in a reduced pressure state, a means for supplying gas to the reaction vessel, a pair of opposed power supply electrodes, and at least one electrode at a position not parallel to the opposed electrode. A plasma processing apparatus comprising: an electrode; and a plurality of power supplies for supplying power of different frequencies to the electrode and the electrode.

[Sixth invention] The plasma processing apparatus according to claim 5, wherein the plasma processing apparatus has high-frequency power and low-frequency power as the power of different frequencies.

[Seventh invention] A method for performing a plasma treatment using a plasma discharge generated by a plurality of electrodes, wherein a supply amount of discharge power supplied to the plurality of electrodes is adjusted. A plasma processing method comprising performing plasma processing by stirring plasma discharge.

[Eighth invention] In the plasma processing method according to the seventh invention, the power supplied to each electrode is changed with time to stir the plasma discharge so that the inside of the plasma discharge region A plasma discharge method characterized by temporally changing the distribution of the plasma discharge.

[Ninth invention] In the plasma processing method according to claim 7, as a method of changing the power supplied to each electrode with time, a matching device provided in a power supply system is used. A plasma processing apparatus adopting a method of changing the power supplied to the electrodes while keeping the output of the power supply constant by adjusting the amount of the reflected wave using the reflected waves.

[Tenth invention] A method for performing a plasma process using a plasma discharge generated by a plurality of electrodes, wherein the supply of discharge power to the plurality of electrodes is turned on and off. Wherein the plasma discharge is agitated to perform the plasma processing.

[Eleventh invention] In the plasma processing method according to the tenth aspect, the power supplied to each electrode is individually turned on and off to temporally reduce the distribution of plasma discharge in the plasma reaction region. A plasma processing method characterized in that the temperature is changed to:

[0019]

According to the present invention, a reactive gas, a diluting gas, a carrier gas and the like are supplied into a reaction vessel, and the gas in the reaction vessel is changed to a glow discharge or plasma state. When the density distribution of reactive particles, charged particles, electrons, etc. in the plasma is observed by time average by stirring
The present invention relates to a plasma processing apparatus and a plasma processing method capable of making a reaction in a reaction vessel spatially uniform by making the reaction chamber substantially uniform.

An electrode for generating a glow discharge or a plasma state is provided in the reaction vessel, and gas supply means for supplying a reactive gas, a diluting gas, a carrier gas and the like is provided. Equipped with an exhaust system for discharging unnecessary gas or air remaining in the reaction vessel before supply and discharging a reactive gas, a diluting gas, and a carrier gas from the reaction vessel, the glow discharge or Equipped with a means for arbitrarily changing the plasma state, the reaction vessel is not limited to a so-called plate shape such as a silicon wafer or a glass substrate, but a shape such as a so-called three-dimensional object such as a drum, a cup or a metal jig. By means of a device equipped with a means for holding the sample, all plasma processing such as film formation, etching, ashing, plasma annealing, etc. can be performed uniformly on the sample. That.

In the present invention, in order to uniformly perform the plasma processing, a plurality of devices for generating a glow discharge or a plasma state are provided, and the magnitude of the discharge output is changed in a time division manner, or the discharge output is not generated in a time division manner. Or One or a plurality of devices for generating a glow discharge or a plasma state and a plurality of generation locations are provided, and switches are switched in a time sharing manner. A device for generating a plurality of glow discharges or plasma states and a device for synchronizing the frequency of the device for generating the glow discharge or the plasma state are provided, and the charged particles are moved by shifting the phases between the respective devices.

By temporally moving the spatial density of the plasma by the means and method as described above, a time-average uniform plasma is generated in the reaction space in the reaction vessel. Just like the state where the plasma was agitated,
It is characterized in that uniform plasma processing is enabled on a sample.

Also, a large number of electrons are generated near the source of high-frequency power by connecting a plasma power source having a different frequency to a plurality of electrodes and combining the frequency at which ions can move with the frequency at which electrons are generated efficiently. The generation of ions can be promoted, and the ions and neutral radicals derived from the ions can be moved in the reaction space by applying low-frequency power to make the plasma uniform in the reaction space. The present invention solves all of the many disadvantages of the prior art, and can be said to be a completely revolutionary invention as a plasma processing apparatus.

The present invention differs from the conventional example shown in FIG. 1 in that a plurality of plasma electrodes are provided in a reaction vessel, the distance between each plasma electrode, the distance between the plasma electrode and the inner wall of the reaction vessel, and the like. The distance between the plasma electrode and the sample is not limited on the basis that the uniformity is good or bad. In addition, there is no need for a means for making the plasma processing uniform while moving the sample in order to perform uniform plasma processing on the sample.

Each of the plurality of plasma electrodes can supply electric energy for converting a reactive gas, a diluting gas, a carrier gas, and the like in the reaction space into plasma, and is close to a space having a small plasma processing ability. Large electric energy can be supplied from the plasma electrode to the reaction space or the electric energy can be supplied for a long time by supplying a large amount of electric energy to the reaction space. By reducing the supply of electric energy from the nearby plasma electrode, or by shortening the supply time of the electric energy, a small amount of electric energy can be supplied on a time-average basis, making the spatial plasma energy and density uniform. The plasma processing can be made uniform over the entire space. .

Further, by supplying the temporal waveform of the power supplied simultaneously from the plurality of plasma electrodes at the same frequency while shifting the phase for each plasma electrode, the power from a certain plasma electrode is maximized for a certain time. Also, as described above, the power supplied from another plasma electrode becomes large at another time, and the temporal power supplied from the plasma electrode is given by giving a phase difference to the temporal waveform of the power of each plasma electrode. A change in the size of the beam automatically becomes a spatial change, which is just the agitation of the plasma.

Also, a single plasma power source is provided, a plurality of plasma electrodes are provided, and each plasma electrode is provided with a switch for determining an operation of electrical connection and disconnection between the plasma electrode and the plasma electrode. By switching, the operating plasma electrode that is supplied with power from the plasma power supply and the inactive plasma electrode that is not supplied with power from the plasma power supply occur temporally. Agitating will make the spatial plasma energy and density uniform,
As a result, the plasma processing can be performed uniformly over the entire space.

Further, a plasma power source is connected to each of the plurality of plasma electrodes installed inside the reaction vessel, and a matching device is provided between the plasma power sources for electrically matching the reaction space with the plasma power source. This matching device can adjust the magnitudes of the power of the traveling wave from the plasma power supply toward the plasma electrode and the reflected wave from the plasma electrode to the plasma power supply of the power supplied from the plasma power supply. Usually, the matching device is adjusted so that the reflected wave is sufficiently smaller than the traveling wave, but the power supplied to the reaction space can be changed by intentionally shifting the matching time. This makes it possible to change the supplied power while keeping the oscillation of the plasma power supply stable.

That is, by adjusting the output using a plasma power source of 1 kW in a state where matching is achieved,
Although it is not possible to stably supply 1 W of power, which is about 1/1000 of the maximum output, 1 kW is oscillated as an output from the plasma power supply and the matching box is not matched, that is, 999 W is reflected. Thus, 1 W can be stably supplied to the electrode.

In order to make the plasma processing requiring large power spatially uniform, or when there is a place where it is desired to reduce the power when there is no problem in a certain process but another process is desired to be performed by the same apparatus. By adjusting the mismatch of a plurality of matching devices connected between a plurality of plasma power sources and a plurality of plasma electrodes spatially or temporally, the spatial and temporal plasma energy and density are made uniform. Thus, the plasma processing can be made uniform over the entire space.

Further, an AC power supply is usually used as a plasma generation power supply for generating plasma, but its role largely depends on the frequency. Relatively low 10 Hz to 5
At 000 kHz (hereinafter referred to as low frequency), the ions can sufficiently follow, so that if the electrode has a large positive potential, the positive ions separate from the electrode and the negative ions approach the electrode, and conversely, the electrode has a negative potential The negative ions move away from the electrode and the positive ions move closer to the electrode. This is a phenomenon in which the ions are stirred in the space in accordance with the frequency of the power supply just applied.

In the generation of plasma at a low frequency, the density and energy of neutral radicals generated by the reaction of ions, atoms and molecules for providing sufficient plasma processing are small because the kinetic energy of electrons is small. If an ion sheath is desired to be generated on the surface of the sample, it cannot be coped with. On the other hand, at a relatively high frequency of 1 MHz to 500 MHz (hereinafter referred to as a high frequency), the density of neutral radicals generated from the reaction of ions, atoms, and molecules to give a relatively large energy to electrons and to provide a sufficient plasma treatment,
It is possible to sufficiently cope with the case where the energy is large and an ion sheath is to be generated on the surface of the sample to be processed.

However, since the ions cannot follow, the ion density in the space where the plasma is generated varies, and as a result, the plasma processing varies.
By using the present invention, an electrode for applying a high frequency and an electrode for applying a low frequency among a plurality of plasma electrodes can be installed together, so that efficient generation of plasma and uniformity due to plasma agitation can be simultaneously realized. .

In the plasma processing apparatus and the plasma processing apparatus of the present invention, hydrogen plasma processing of a cylindrical surface having a diameter of 80 mm and a length of 400 mm and a silicon nitride film formed on a 6-inch silicon wafer by plasma CVD may be performed. Also, plasma etching of an ITO (indium oxide) film on a glass substrate can be uniformly performed by the same apparatus.

In addition, it is difficult to design and manufacture a large size CVD apparatus having an inner diameter of 1 m × 1 m × 1 m or more because of the weight of the electrode and the expansion of the electrode when heat is applied. However, the present invention can be easily designed by providing a plurality of small electrodes and stirring the plasma, that is, by changing the spatial and temporal distribution of the plasma.

[0036]

【Example】

Embodiment 1 FIG. 2 shows a schematic diagram of a plasma processing apparatus of the present embodiment. The reaction vessel 1 includes a sample 2 having a surface to be processed.
1 is held. Plasma electrodes 22, 24, 26 are provided so as to surround the periphery of the sample 21. These plasma electrodes connect the inside and the outside of the reaction vessel 1 through a feed-through without breaking airtightness.

From the outside of the reaction vessel 1, a plasma power source 2
3, 25, 27 are respectively connected to the respective electrodes by the feedthroughs through matching devices 28, 29, 30. The reactive gas, dilution gas, carrier gas, and the like are supplied from the supply system 32, 33, and 34 to the inside of the reaction vessel 1 via the flow meter 35 and the valve 36. Electric energy is supplied from plasma power sources 23, 25, 27 between the plasma electrodes 22, 24, 26 and the inner wall of the reaction vessel 1 to generate plasma in the reaction space 37, and the sample 21 is subjected to plasma processing.

The exhaust system 38 is provided with a variable conductance valve 39 for controlling the pressure in the reaction vessel 1. An open / close valve 41 is provided between the vacuum pump 40 and the variable conductance valve 39, and the exhaust gas is exhausted. Controlling execution. These plasma power supplies perform time control of the output as shown in FIG.
3 and output power only from the plasma power supply 25 for the next predetermined time.
3, 25, 27 and the output power change in a pulse shape.

As a result, the plasma density in the reaction space 37 increases sequentially in the vicinity of the plasma electrodes 22, 24 and 26, and such a state is repeated periodically. In addition, the plasma generation timing does not always mean that one of the plasma power supplies 23, 25, and 27 is on and the others are off, and so-called on-state may be overlapped by two or more of the plasma power supplies. Further, there may be a timing when all of the plasma power supplies are turned on or off.

The on / off timing varies depending on the shape of the sample 21, for example, the plasma electrode 24.
If the part close to is difficult to plasma-process,
By making the application time of the output power of the plasma power supply 25 connected to the plasma electrode 24 longer than that of other plasma power supplies, or by increasing the magnitude of the output power, it is possible to cover the difficulty in processing the sample. A uniform plasma treatment can be performed over the entirety of the substrate 21.

When the processing content of the sample 21 is, for example, plasma hydrogen processing of the surface, the supply systems 32, 33, 34
When an amorphous silicon film is formed by connecting a hydrogen gas to one or more of the above, a silane gas is connected to one or more of the supply systems.

In this embodiment, the diameter is 80 mm and the length is 400 m
An amorphous silicon film was formed on a so-called photosensitive drum having a cylindrical shape of m. SiH ₄ (monosilane) gas 10~1000SCCM to the reaction vessel 1, wherein the 0~1000SCCM a He (helium) gas as a carrier gas flow meter 35, and introduced via the valve 36. The sample 21 has a cylindrical shape, and is installed vertically at the center of the reaction vessel 1 in the reaction space with the longitudinal direction facing upward.

Although not shown in the drawing, an infrared lamp heater for heating was attached to the reaction vessel 1, and the sample 21 was heated to 150 to 250 ° C. The pressure is 1
The pressure was adjusted by the conductance variable valve 39 in the range of mTorr to 1 Torr. Since the film thickness distribution at the short part of the cylinder becomes thinner than the other parts, the plasma electrode 24 needs to be increased in density in order to become an electrode close to the short part of the cylinder. .

As compared with the other plasma electrodes 22 and 26, there are a method of increasing the supply power and a method of increasing the supply time. However, since the film quality of amorphous silicon is deeply related to the deposition rate, the supply time is reduced. Film formation was performed by using a method of lengthening. When the film thickness was measured after film formation, it was 20 μm ±
A good film thickness distribution characteristic of 2 μm was obtained.

Embodiment 2 FIG. 4 shows a schematic diagram of this embodiment. The reaction container 1 holds a sample 21 having a surface to be processed. Plasma electrodes 26, 24, 22, and 45 are provided so as to surround the periphery of the sample 21. Each plasma electrode connects the inside and the outside of the reaction vessel 1 through a feed-through without breaking airtightness.

From outside the reaction vessel 1, a plasma power source 4
3 is connected to matching devices 30, 29, 28 and 44 through a switch (hereinafter referred to as a switch) 42, and further connected to electrodes through the matching device. Reactive gas, diluent gas, carrier gas, etc.
It is supplied to the inside of the reaction vessel 1 from 33 and 34 via a flow meter 35 and a valve 36.

Electric energy is supplied from the plasma power supply 43 between the plasma electrodes 30, 24, 22, and 45 and the inner wall of the reaction vessel 1, and plasma is generated in the reaction space 37, and the sample 21 is subjected to plasma processing. The reactive gas, the diluent gas, the carrier gas, and the like have extremely high energy when in a plasma state, and collide with an object inside the reaction vessel 1 and knock out unnecessary components from the object. Therefore, a reactive gas, a diluting gas, a carrier gas, and the like are always supplied, and unnecessary gas is exhausted through the exhaust system 38 so that unnecessary elements do not easily exist in the reaction space. There is a need to.

The plasma power supply 43 continuously outputs the supplied electric power, and the place where the electric power is applied is set to the plasma electrodes 26, 2.
The operation to be performed on any one of 4, 22, 45
Do. In FIG. 3, the supply power is applied only to the plasma electrode 26, but may be applied to all the plasma electrodes or not at all at a certain time.
It can be appropriately selected by the user depending on the shape of the sample 21 to be subjected to the plasma processing and the content of the plasma processing.

Embodiment 3 FIG. 5 shows a schematic diagram of this embodiment. A sample 21 having a surface to be processed is held in the reaction vessel 1. Plasma electrodes 26, 24, 22, and 45 are provided so as to surround the periphery of the sample 21.

From outside the reaction vessel 1, a plasma power source 5
1 is connected to matching devices 30, 29, 28 and 44 through a switch (hereinafter referred to as a switch) 50, and further connected to respective electrodes through the matching devices. The switch 51 can be selected to be connected to an electric wiring connected to the plasma electrodes 26, 24, 22, and 45 or to a ground potential. This is due to the plasma electrodes 26, 24, 22, 45 depending on the contents of the plasma processing.
Is sometimes required as a cathode or an anode.

The plasma power supply 51 continuously outputs the supplied power, and places the place where the power is applied to the plasma electrodes 26, 2.
The operation to be performed on any of 4, 22, and 45 is performed by the switch 50.
Do. In FIG. 4, the supply power is applied only to the plasma electrodes 26, but at a certain time, all the plasma electrodes 2 are supplied.
6, 24, 22, and 45, or vice versa. It depends on the shape of the sample 21 to be subjected to the plasma processing and the contents of the plasma processing. The present inventors first selected the switch 50 so that an electrode near the sample was a cathode, and then performed etching on a sample on which a film was continuously formed after etching. And a plasma treatment was performed.

[Embodiment 4] FIG. 6 shows a schematic diagram of this embodiment. The reaction container 1 holds a sample 21 having a surface to be processed. Plasma electrodes 26, 24, 22, and 45 are provided so as to surround the periphery of the sample 21. The plasma electrodes 26, 24, 22, and 45 connect the inside and the outside of the reaction vessel 1 through a feed-through without breaking the airtightness of the reaction vessel 1.

From the outside of the reaction vessel 1, a plasma power source 2
7, 25, 23 and 60 are matching units 30, 29 and 2 respectively.
8 and 44, respectively, are connected to the feedthrough. Here, the plasma power sources 27, 25, 23, 6
Numerals 0 are a high frequency power supply, a low frequency power supply, a high frequency power supply and a low frequency power supply, respectively.

That is, the opposing plasma electrodes 26, 2
2 is connected to high-frequency plasma power supplies 27 and 23, respectively, and the other opposing plasma electrodes 24 and 45 are connected to low-frequency plasma power supplies 25 and 60, respectively.
Here, high frequency means a frequency of about 1 MHz to 500 MHz, and low frequency means a frequency of about 10 Hz to 5000 kHz. In this embodiment, a 13.56 MHz high frequency power supply and a 50 kHz low frequency power supply were used.

Here, the high-frequency power supply is for generating more electrons, and the low-frequency power supply is for stirring ions in the reaction space. The reactive gas, the dilution gas, the carrier gas, and the like are supplied to the inside of the reaction vessel 1 via the supply system 23. Plasma electrodes 26, 24, 2
2 and 45 and the inner wall of the reaction vessel 1
Electric energy is supplied from 7, 25, 23, and 60 to generate plasma in the reaction space 37, and the sample 21 is subjected to plasma processing. Plasma power supplies 25 and 60 for mainly ion stirring and plasma power supplies 27 for mainly electron generation,
The magnitude of the power supplied to the sample 23 depends on the shape of the sample 21 and the contents of the plasma processing. Conversely, uniform plasma processing can be realized by adjusting the shape according to the shape of the object to be processed.

[0056]

According to the present invention, the density distribution of reactive particles, charged particles, electrons, etc. in the plasma is observed on a time average by glow discharge or stirring the plasma state in the reaction vessel. By making the reaction vessel substantially uniform in the reaction vessel, the reaction in the reaction vessel can be made spatially uniform.

By arbitrarily changing the state of the glow discharge or the plasma, the reaction vessel is not limited to a so-called plate-like object such as a silicon wafer or a glass substrate, but also a so-called three-dimensional object such as a drum, a cup or a metal jig. By using an apparatus having means for holding a sample having such a shape, it has become possible to uniformly perform all kinds of plasma processing such as film formation, etching, ashing, and plasma annealing on the sample.

In order to make the plasma processing requiring a large amount of power uniform spatially, or when there is a place where it is desired to reduce the power when there is no problem in one process but another process is to be performed by the same apparatus. By adjusting the mismatch of a plurality of matching devices connected between a plurality of plasma power sources and a plurality of plasma electrodes spatially or temporally, the spatial and temporal plasma energy and density are made uniform. As a result, the plasma processing can be made uniform over the entire space.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of a conventional plasma processing apparatus.

FIG. 2 shows an example of the plasma processing apparatus of the present invention.

FIG. 3 shows an example of a change in power supplied to an electrode during the plasma processing method of the present invention.

FIG. 4 shows an example of the plasma processing apparatus of the present invention.

FIG. 5 shows an example of the plasma processing apparatus of the present invention.

FIG. 6 shows an example of the plasma processing apparatus of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Reaction container 21 ... Workpiece 22 ... Electrode 24 ... Electrode 26 ... Electrode 45 ... Electrode 23 ... Power supply for plasma 25 ... Power supply for plasma 27 ... Power supply for plasma 60 ... Plasma Power supply 28 ・ ・ Matcher 29 ・ ・ Matcher 30 ・ ・ Matcher 44 ・ ・ Matcher

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-5-70957 (JP, A) JP-A-4-56215 (JP, A) JP-A-2-17978 (JP, A) JP-A-5-1995 299398 (JP, A) JP-A-5-9741 (JP, A) JP-A-6-333857 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/205 H01L 21 / 31 C23C 16/505 H05H 1/46

Claims (17)

(57) [Claims] 1. A reaction container, means for supplying a gas into the reaction container, first and second electrodes facing each other provided in the reaction container, and a first electrode provided in the reaction container. A third electrode which is not parallel to the first and second electrodes, and which is electrically connected to the first electrode via a first matching device;
Power supply connected to the second electrode via a second matching box.
Is the electrode and the third matching unit to the third electrode and is electrically connected via a
Wherein the electrode, the hand for connecting the first electrode to the power source or ground potential
And a means for connecting the second electrode to the power or ground potential.
Step and means for connecting said third electrode to said power or ground potential
And a step . 2. The power supply according to claim 1, wherein the frequency of the power supplied from the power supply is 1 MHz to 50 MHz.
A plasma processing apparatus having a frequency of 0 MHz. 3. The power supply according to claim 1, wherein the frequency of the power supplied from the power supply is 10 Hz to 50 Hz.
A plasma processing apparatus having a frequency of 00 KHz. 4. A reaction vessel, means for supplying gas into the reaction vessel, first and second electrodes facing each other provided in the reaction vessel, and a first electrode provided in the reaction vessel. The first and second electrodes
A third electrode that is not parallel and electrically connected to the first electrode via a first matching device;
And a first power supply connected to the second electrode via a second matching box.
And a third power supply connected to the third electrode via a third matching box.
And a third power supply . 5. The method of Claim 4, the plasma processing apparatus, wherein the frequency of the power supplied from the first to third power supply is 1MHz～500MHz. 6. The method of Claim 1 or 5, a plasma processing apparatus, wherein the frequency of the power supplied from the first to third power supply is 10Hz～5000KHz. 7. A reaction container, means for supplying a gas into the reaction container, first and second electrodes facing each other provided in the reaction container, and a first electrode provided in the reaction container. A third electrode which is not parallel to the first and second electrodes, and which is electrically connected to the first electrode via a first matching device ;
The power supply and, electrically connected and through said second matching unit second electrode
The said power supply and a third matching unit to the third electrode and is electrically connected via
A said power source and a plasma processing method using a plasma processing apparatus having a was, the first to the power of the third power supply is constant, the first to third matching device from said each of the power supply
The first to third traveling waves traveling toward the first to third electrodes;
A plasma processing method comprising adjusting the amount of reflected waves at the electrodes . 8. A reaction vessel, means for supplying a gas into the reaction vessel, first and second electrodes facing each other provided in the reaction vessel, and a first electrode provided in the reaction vessel. a 1 and the third electrode is not parallel to the second electrode, said a power supply for supplying power to the first to third electrodes, a plasma processing method using a plasma processing apparatus having a first plasma processing method supplies power only to the electrodes, power only to said second electrode, and repeating the supplying power only to the third electrode. 9. A reaction vessel, means for supplying a gas into the reaction vessel, first and second electrodes facing each other provided in the reaction vessel, and a first electrode provided in the reaction vessel. a 1 and the third electrode is not parallel to the second electrode, and a power source for supplying power to the first to third electrodes, the hand for connecting the first electrode to the power source or ground potential
And a means for connecting the second electrode to the power or ground potential.
Step and means for connecting said third electrode to said power or ground potential
A plasma processing method using a plasma processing apparatus having a stage, the supply power by connecting only the first electrode to said power source
And the other electrode is connected to the ground potential, and only the second electrode is connected to the power supply to supply power.
The other electrode is connected to the ground potential, and only the third electrode is connected to the power supply to supply power.
The other electrode is repeatedly connected to the ground potential.
And a plasma processing method. 10. A method according to claim 7 to 9 any one frequency of the power supplied from the power source 1MHz~50
A plasma processing method, wherein the frequency is 0 MHz. 11. The power supply according to claim 7, wherein the frequency of the power supplied from the power supply is 10 Hz to 50 Hz.
A plasma processing method characterized by being at 00 KHz. 12. A reaction vessel, means for supplying a gas into the reaction vessel, first and second electrodes facing each other provided in the reaction vessel, and a first electrode provided in the reaction vessel. A third electrode which is not parallel to the first and second electrodes, and which is electrically connected to the first electrode via a first matching device;
And a first power supply connected to the second electrode via a second matching box.
And a third power supply connected to the third electrode via a third matching box.
A third plasma processing method using a plasma processing apparatus having a power source, the which, the output power of 1 to 3 is constant, the first to
3 matchers are respectively provided from the first to third power sources.
The first to third traveling waves traveling toward the first to third electrodes;
A plasma processing method comprising adjusting the amount of reflected waves at the electrodes . 13. A reaction vessel, means for supplying gas into the reaction vessel, first and second electrodes facing each other provided in the reaction vessel, and a first electrode provided in the reaction vessel. A third electrode that is not parallel to the first and second electrodes; and a third electrode that is not parallel to the first and second electrodes, wherein power is supplied to only the first electrode and power is supplied to only the second electrode. And supplying power only to the third electrode repeatedly . 14. A reaction vessel, means for supplying a gas into the reaction vessel, first and second electrodes facing each other provided in the reaction vessel, and a first electrode provided in the reaction vessel. A third electrode not parallel to the first and second electrodes, and a means for connecting the first electrode to the power supply or ground potential.
And a means for connecting the second electrode to the power or ground potential.
Step and means for connecting said third electrode to said power or ground potential
A plasma processing method using a plasma processing apparatus having a stage, the supply power by connecting only the first electrode to said power source
And the other electrode is connected to the ground potential, and only the second electrode is connected to the power supply to supply power.
The other electrode is connected to the ground potential, and only the third electrode is connected to the power supply to supply power.
And the other electrode is repeatedly connected to the ground potential . 15. A reaction container, means for supplying a gas into the reaction container, first and second electrodes facing each other provided in the reaction container, and a first electrode provided in the reaction container. A third electrode not parallel to the first and second electrodes, a first AC power supply electrically connected to the first electrode, and a second AC power electrically connected to the second electrode. A plasma processing method using a plasma processing apparatus comprising: a power supply; and a third AC power supply electrically connected to the third electrode, wherein the plasma processing is performed from the first to third electrodes. A phase of electric power supplied to the reaction space is shifted. 16. The plasma processing method according to claim 12, wherein the frequency of the power supplied from the first to third power supplies is 1 MHz to 500 MHz. 17. The plasma processing method according to claim 12, wherein the frequency of the power supplied from the first to third power supplies is 10 Hz to 5000 KHz.