JP3147157B2 - Electronic circuit device including semiconductor element - Google Patents
Electronic circuit device including semiconductor elementInfo
- Publication number
- JP3147157B2 JP3147157B2 JP35233297A JP35233297A JP3147157B2 JP 3147157 B2 JP3147157 B2 JP 3147157B2 JP 35233297 A JP35233297 A JP 35233297A JP 35233297 A JP35233297 A JP 35233297A JP 3147157 B2 JP3147157 B2 JP 3147157B2
- Authority
- JP
- Japan
- Prior art keywords
- resin layer
- semiconductor element
- protective resin
- circuit board
- electronic circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明はバンプ電極（突起電極）
を有する半導体素子を含む電子回路装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bump electrode (bump electrode).
The present invention relates to an electronic circuit device including a semiconductor element having:
【０００２】[0002]
【従来の技術】図１に示すようにバンプ電極１を備えた
半導体素子２を回路基板３上に搭載した電子回路装置は
公知である。半導体素子２はバンプ電極１を回路基板３
の配線導体４に半田付けすることによって取付けられ、
外部から水分等の異物が侵入することを防止するために
第１及び第２の保護樹脂層５、６によって被覆されてい
る。第１の保護樹脂層５はシリコーンゲルから成り、バ
ンプ電極１を被覆し且つ半導体素子２の本体部２ａの下
面と回路基板３との間を充填するように設けられてい
る。第２の保護樹脂層６はシリコーンラバーから成り、
半導体素子２の本体部２ａの上面及び第１の保護樹脂層
５を被覆すると共に高集積化のために半導体素子２の近
傍に配置された別の回路素子に接続された金属細線８の
接続部分も被覆するように形成されている。回路基板３
は上面に金属細線接続用の配線導体９を有し、下面に金
属層１０を有する。なお、半導体素子２の下面を含めて
全体を被覆するようにシリコーンラバーから成る第２の
保護樹脂層６を設けないのは、半導体素子２の下面にシ
リコーンラバーを注入すると、シリコーンラバーは比較
的大きな弾性を有するために半導体素子２を上方に持ち
上げてバンプ電極１を破断するおそれがあるためであ
る。また、半導体素子２の上面も含めて全体を被覆する
ようにシリコーンゲルから成る第１の保護樹脂層５を設
けないのは、シリコーンゲルはシリコーンラバーに比べ
て粘度が十分に小さいため、シリコーンゲルのみでは半
導体素子２の全体を良好に被覆することができないため
である。2. Description of the Related Art As shown in FIG. 1, an electronic circuit device in which a semiconductor element 2 having a bump electrode 1 is mounted on a circuit board 3 is known. The semiconductor element 2 connects the bump electrode 1 to the circuit board 3
Attached by soldering to the wiring conductor 4 of
It is covered with first and second protective resin layers 5 and 6 to prevent foreign matter such as moisture from entering from the outside. The first protective resin layer 5 is made of silicone gel, and is provided so as to cover the bump electrode 1 and fill the space between the lower surface of the main body 2 a of the semiconductor element 2 and the circuit board 3. The second protective resin layer 6 is made of silicone rubber,
A connection portion of the thin metal wire 8 which covers the upper surface of the main body 2a of the semiconductor element 2 and the first protective resin layer 5 and is connected to another circuit element arranged near the semiconductor element 2 for high integration. It is also formed so as to cover. Circuit board 3
Has a wiring conductor 9 for connecting a fine metal wire on the upper surface and a metal layer 10 on the lower surface. The reason why the second protective resin layer 6 made of silicone rubber is not provided so as to cover the entire surface including the lower surface of the semiconductor element 2 is that when silicone rubber is injected into the lower surface of the semiconductor element 2, the silicone rubber becomes relatively This is because the semiconductor element 2 may be lifted upward to break the bump electrode 1 due to the large elasticity. Further, the reason why the first protective resin layer 5 made of silicone gel is not provided so as to cover the entire surface including the upper surface of the semiconductor element 2 is that silicone gel has a sufficiently smaller viscosity than silicone rubber. This is because it is not possible to cover the entire semiconductor element 2 satisfactorily by using only the semiconductor element 2.
【０００３】[0003]
【発明が解決しようとする課題】ところで、図１に示す
電子回路装置ではバンプ電極１にクラックが発生し断線
に至ることがあった。これはシリコ−ンラバ−の線膨張
係数が大きいことに起因すると考えられる。即ち、シリ
コ−ンラバ−から成る第２の保護樹脂層６は回路基板３
と樹脂封止体（図示せず）とで囲まれて密閉された状態
にあるため、樹脂封止体が例えば温度サイクル試験等で
高温（１２５℃以上）になることで第２の保護樹脂層６
が膨張すると、回路基板３と第２の保護樹脂層６とで挟
まれた半導体素子２に機械的応力が加わる。このため、
バンプ電極１が押しつぶされる。一方、樹脂封止体が低
温状態に置かれると、第２の保護樹脂層６が収縮し、半
導体素子２の保護樹脂層６による押さえ付けが解かれ
る。この押さえ付けと、その解除との繰り返しによって
バンプ電極１にクラックが発生し、最終的には断線に至
る。半導体素子に加わる機械的応力を開放するために、
樹脂封止体にその上面から第２の保護樹脂層６に通じる
孔を形成することが考えられる。この構造によれば、熱
膨張時に第２の保護樹脂層６がこの孔に侵入するので、
半導体素子２に加わる機械的応力を低減することができ
る。しかし、この構造では孔を通じて樹脂封止体の内部
に湿気等を取り込み易くなるため信頼性の点で問題があ
る。By the way, in the electronic circuit device shown in FIG. 1, cracks may occur in the bump electrodes 1 and lead to disconnection. This is considered to be due to the large linear expansion coefficient of the silicone rubber. That is, the second protective resin layer 6 made of silicone rubber is
And a resin-sealed body (not shown), so that the resin-sealed body becomes high in temperature (125 ° C. or more) by, for example, a temperature cycle test. 6
Expands, a mechanical stress is applied to the semiconductor element 2 sandwiched between the circuit board 3 and the second protective resin layer 6. For this reason,
The bump electrode 1 is crushed. On the other hand, when the resin sealing body is placed in a low temperature state, the second protective resin layer 6 contracts, and the pressing of the semiconductor element 2 by the protective resin layer 6 is released. Cracks occur in the bump electrode 1 due to the repetition of the pressing and the release, and finally the disconnection occurs. In order to release the mechanical stress applied to the semiconductor element,
It is conceivable to form a hole from the upper surface of the resin sealing body to the second protective resin layer 6. According to this structure, the second protective resin layer 6 penetrates into this hole during thermal expansion.
The mechanical stress applied to the semiconductor element 2 can be reduced. However, this structure has a problem in reliability because moisture and the like are easily taken into the resin sealing body through the holes.
【０００４】そこで、本発明は、バンプ電極を有する半
導体素子を良好に保護することができると共に耐湿性等
にも優れ、電気的特性が長期間にわたって良好に得るこ
とができる電子回路装置を提供することを目的とする。Therefore, the present invention provides an electronic circuit device that can protect a semiconductor element having a bump electrode well, has excellent moisture resistance, and can obtain good electrical characteristics over a long period of time. The purpose is to:
【０００５】[0005]
【課題を解決するための手段】上記課題を解決し、上記
目的を達成するための本発明は、バンプ電極を備えた半
導体素子と、回路基板と、第１及び第２の保護樹脂層
と、樹脂封止体とから成り、前記半導体素子の平板状の
本体部は前記バンプ電極によって前記回路基板の配線導
体に接続され、前記第１の保護樹脂層は、前記半導体素
子の前記バンプ電極を被覆し且つ前記半導体素子の前記
本体部の一方の主面と前記回路基板との間を充填するよ
うに設けられ、前記第２の保護樹脂層は、前記半導体素
子の前記本体部の他方の主面とを被覆するように設けら
れ、前記樹脂封止体は前記第２の保護樹脂層を介して前
記回路基板を覆うように設けられ、前記第１の保護樹脂
層は液状エポキシ樹脂に基づいて形成され、前記第２の
保護樹脂層はシリコ−ンラバ−（弾性を有するシリコ−
ン樹脂）から成り、前記第１の保護樹脂層は前記第２の
保護樹脂層よりも大きい硬度（かたさ）を有しているこ
とを特徴とする電子回路装置に係わるものである。な
お、本発明において、半導体素子とはトランジスタ、ダ
イオード、サイリスタ、集積回路、混成集積回路等の半
導体を含む全ての素子又は部品を意味する。また、電子
回路装置は、半導体集積回路装置、混成集積回路装置、
複合半導体素子、半導体装置等の種々の回路装置を意味
する。SUMMARY OF THE INVENTION In order to solve the above problems and to achieve the above object, the present invention provides a semiconductor device having a bump electrode, a circuit board, first and second protective resin layers, A flat body of the semiconductor element is connected to a wiring conductor of the circuit board by the bump electrode, and the first protective resin layer covers the bump electrode of the semiconductor element. And a gap between one main surface of the main body of the semiconductor element and the circuit board is provided, and the second protective resin layer is provided on the other main surface of the main body of the semiconductor element. And the resin sealing body is provided so as to cover the circuit board via the second protective resin layer, and the first protective resin layer is formed based on a liquid epoxy resin. And the second protective resin layer is made of silicon. Nraba - (silicone having an elastic -
The first protective resin layer has a higher hardness (hardness) than the second protective resin layer. In the present invention, a semiconductor element means all elements or components including a semiconductor such as a transistor, a diode, a thyristor, an integrated circuit, and a hybrid integrated circuit. The electronic circuit device may be a semiconductor integrated circuit device, a hybrid integrated circuit device,
It means various circuit devices such as a composite semiconductor element and a semiconductor device.
【０００６】[0006]
【発明の作用及び効果】本発明は次の作用及び効果を有
する。液状エポキシ樹脂から成る第１の保護樹脂層が半
導体素子のバンプ電極を被覆し且つ半導体素子の本体部
の一方の主面と回路基板との間を充填しているので、温
度サイクルが多数繰り返されてもバンプ電極にクラック
が生じて断線することがない。即ち、液状エポキシから
成る第１の保護樹脂層は半導体素子と回路基板の両方に
対して良好に密着し、且つシリコンゲルやシリコ−ンラ
バ−から成る保護樹脂層に比べて硬度及び剛性が大きく
半導体素子に対して硬い台座として機能する。このた
め、第２の樹脂層の熱膨張によって半導体素子に対して
下向き（回路基板側に向う方向）の押さえ付けが加わっ
たとき、この応力を第１の保護樹脂層が支持し、バンプ
電極に大きな応力（圧縮力）が加わることが阻止され
る。この結果、バンプ電極のクラック及び破断が防止さ
れる。The present invention has the following functions and effects. Since the first protective resin layer made of a liquid epoxy resin covers the bump electrodes of the semiconductor element and fills the gap between one main surface of the main body of the semiconductor element and the circuit board, a number of temperature cycles are repeated. Even if the bump electrodes are not cracked, they are not broken. That is, the first protective resin layer made of liquid epoxy adheres well to both the semiconductor element and the circuit board, and has a higher hardness and rigidity than the protective resin layer made of silicon gel or silicone rubber. Functions as a hard pedestal for the element. Therefore, when the semiconductor element is pressed downward (toward the circuit board) by the thermal expansion of the second resin layer, the stress is supported by the first protective resin layer and the bump electrode is supported by the bump electrode. Large stress (compression force) is prevented from being applied. As a result, cracks and breaks of the bump electrodes are prevented.
【０００７】[0007]
【実施形態及び実施例】次に、図２を参照して本発明の
実施例に係わる電子回路装置を説明する。図２に示す電
子回路装置は混成集積回路であって、図１と同様に金属
突起から成るバンプ電極１を有する半導体素子２と例え
ばセラミックから成る絶縁性回路基板３と電子回路素子
７と内部リード細線としての金属細線８とを備えてい
る。半導体素子２のバンプ電極１は回路基板３上の配線
導体４に半田付けされている。即ち半導体素子２のＰＮ
接合等を含む平板状の本体部２ａの一方の主面が回路基
板３の主面に所定の間隔を有して対向するようにフェー
スダウンボンディングされている。例えば直径２００μ
ｍのＡｌワイヤから成る金属細線８の一端は半導体素子
２の近傍に配置された回路基板３上の配線導体９に周知
のワイヤボンディング法によってステッチボンディング
され、この他端は電子回路素子７の上面の電極にワイヤ
ボンディング法によってステッチボンディングされてい
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, an electronic circuit device according to an embodiment of the present invention will be described with reference to FIG. The electronic circuit device shown in FIG. 2 is a hybrid integrated circuit, as in FIG. 1, a semiconductor element 2 having a bump electrode 1 made of a metal projection, an insulating circuit board 3 made of, for example, ceramic, an electronic circuit element 7, and internal leads. And a thin metal wire 8 as a thin wire. The bump electrode 1 of the semiconductor element 2 is soldered to a wiring conductor 4 on a circuit board 3. That is, the PN of the semiconductor element 2
Face-down bonding is performed such that one main surface of the plate-shaped main body 2a including a joint or the like faces the main surface of the circuit board 3 at a predetermined interval. For example, 200μ in diameter
One end of a thin metal wire 8 made of Al wire is stitch-bonded to a wiring conductor 9 on a circuit board 3 arranged near the semiconductor element 2 by a known wire bonding method, and the other end is an upper surface of the electronic circuit element 7. Are stitch-bonded to the electrodes by a wire bonding method.
【０００８】この実施例においても、バンプ電極１を囲
み且つ半導体素子２の本体部２ａと回路基板３との間を
充填するように第１の保護樹脂層５ａが設けられ、ま
た、半導体素子２の本体部２ａの上面と第１の保護樹脂
層５ａと少なくとも金属細線８の配線導体９に対する接
続部を被覆するように第２の保護樹脂層６が設けられて
いる。しかし、この第１の保護樹脂層５ａの材料及び製
造方法が図１の従来の第１の保護樹脂層５と相違してい
る。本実施例の第１の保護樹脂層５ａは第２の保護樹脂
層６を形成するためのシリコ−ンラバ−に比べて粘度が
低く、従来の第１の保護樹脂層５を形成するシリコ−ン
ゲルに近い粘度を有する液状エポキシ樹脂を半導体素子
２の本体部２ａと回路基板３との間に充填し、しかる
後、硬化することによって形成したものである。また、
硬化した後において、第１の保護樹脂層５ａの硬度及び
剛性は第２の保護樹脂層６及び従来の第１の保護樹脂層
５のこれ等よりも大きい。このため第１の保護樹脂層５
ａは硬化前においては、半導体素子２と回路基板３との
対向する比較的狭い領域に良好に注入してこれを充填す
ることができ、硬化後においてはバンプ電極１を押し付
け力から保護するための台座として良好に機能する。Also in this embodiment, a first protective resin layer 5a is provided so as to surround the bump electrode 1 and fill the space between the main body 2a of the semiconductor element 2 and the circuit board 3. The second protective resin layer 6 is provided so as to cover the upper surface of the main body 2a, the first protective resin layer 5a, and at least the connection portion of the thin metal wire 8 to the wiring conductor 9. However, the material and manufacturing method of the first protective resin layer 5a are different from those of the conventional first protective resin layer 5 of FIG. The first protective resin layer 5a of this embodiment has a lower viscosity than the silicone rubber for forming the second protective resin layer 6, and the silicone gel for forming the conventional first protective resin layer 5 is used. It is formed by filling a liquid epoxy resin having a viscosity close to that between the main body 2a of the semiconductor element 2 and the circuit board 3 and then curing the liquid epoxy resin. Also,
After curing, the hardness and rigidity of the first protective resin layer 5a are larger than those of the second protective resin layer 6 and the conventional first protective resin layer 5. Therefore, the first protective resin layer 5
Before hardening, a can be satisfactorily injected into a relatively narrow area between the semiconductor element 2 and the circuit board 3 and filled therein, and after hardening, the bump electrode 1 is protected from pressing force. Works well as a pedestal.
【０００９】半導体素子２が固着された回路基板３は放
熱性を有する金属支持板１１の上に配置され、この下面
の金属層１０が半田（導電性接合材）１２によって支持
板１１に結合され、これ等はエポキシ樹脂から成る樹脂
封止体１３によって一体に成形されている。樹脂封止体
１３は、回路基板３、第２の保護樹脂層６、電子回路素
子７、金属細線８及び支持板１１を覆うように金型を使
用した周知のトランスファモールドで形成されている。
なお、図２には示されていないが、回路基板３上の端子
（電極）を外部回路に接続するための外部リードも設け
られており、この外部リードと回路基板３の端子とが金
属細線（内部リード）で接続され、これも樹脂封止体１
３で被覆されている。樹脂封止体１３の硬度は第２の保
護樹脂層６の硬度よりも大きく、第１の保護樹脂層５ａ
の硬度と同一又はこれよりも大きいことが望ましい。The circuit board 3 to which the semiconductor element 2 is fixed is disposed on a metal support plate 11 having heat dissipation, and the metal layer 10 on the lower surface is joined to the support plate 11 by solder (conductive bonding material) 12. These are integrally formed by a resin sealing body 13 made of epoxy resin. The resin sealing body 13 is formed by a well-known transfer mold using a mold so as to cover the circuit board 3, the second protective resin layer 6, the electronic circuit element 7, the fine metal wires 8 and the support plate 11.
Although not shown in FIG. 2, an external lead for connecting a terminal (electrode) on the circuit board 3 to an external circuit is also provided, and the external lead and the terminal of the circuit board 3 are connected to a thin metal wire. (Internal lead), which is also a resin-sealed body 1
3 coated. The hardness of the resin sealing body 13 is greater than the hardness of the second protective resin layer 6, and the first protective resin layer 5a
It is desirable that the hardness is equal to or greater than the hardness.
【００１０】上記の本実施例の電子回路装置によれば、
第１の保護樹脂層５ａが台座として機能するため、バン
プ電極１のクラック及び断線を良好に防止することがで
きる。According to the electronic circuit device of the present embodiment,
Since the first protective resin layer 5a functions as a pedestal, cracking and disconnection of the bump electrode 1 can be favorably prevented.
【００１１】[0011]
【変形例】本発明は上述の実施例に限定されるものでな
く、例えば次の変形が可能なものである。 （１） 図２では金属細線８を電子回路素子７に接続し
ているが、この代りに外部リード（図示せず）に接続す
ることができる。 （２） 第２の保護樹脂層６を電子回路素子７及び金属
細線８の全部を被覆するように形成することができる。 （３） 支持板１１の下面を樹脂封止体１２で被覆しな
いように構成することができる。[Modifications] The present invention is not limited to the above-described embodiment, and for example, the following modifications are possible. (1) Although the thin metal wires 8 are connected to the electronic circuit element 7 in FIG. 2, they can be connected to external leads (not shown) instead. (2) The second protective resin layer 6 can be formed so as to cover the entire electronic circuit element 7 and the thin metal wires 8. (3) The lower surface of the support plate 11 can be configured not to be covered with the resin sealing body 12.
【図１】従来の電子回路装置を示す断面図である。FIG. 1 is a cross-sectional view illustrating a conventional electronic circuit device.
【図２】本発明の実施例に係わる電子回路装置を示す断
面図である。FIG. 2 is a sectional view showing an electronic circuit device according to the embodiment of the present invention.
１ バンプ電極 ２ 半導体素子 ３ 回路基板 ５ａ 第１の保護樹脂層 ６ 第２の保護樹脂層 ８ 金属細線 １１ 支持板 １３ 樹脂封止体 DESCRIPTION OF SYMBOLS 1 Bump electrode 2 Semiconductor element 3 Circuit board 5a 1st protective resin layer 6 2nd protective resin layer 8 Fine metal wire 11 Support plate 13 Resin sealing body
フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 23/29 H01L 23/31 H01L 25/00 H01L 23/36 H01L 21/60 Continuation of the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 23/29 H01L 23/31 H01L 25/00 H01L 23/36 H01L 21/60
Claims (1)
基板と、第１及び第２の保護樹脂層と、樹脂封止体とか
ら成り、 前記半導体素子の平板状の本体部は前記バンプ電極によ
って前記回路基板の配線導体に接続され、 前記第１の保護樹脂層は、前記半導体素子の前記バンプ
電極を被覆し且つ前記半導体素子の前記本体部の一方の
主面と前記回路基板との間を充填するように設けられ、 前記第２の保護樹脂層は、前記半導体素子の前記本体部
の他方の主面を被覆するように設けられ、 前記樹脂封止体は前記第２の保護樹脂層を介して前記回
路基板を覆うように設けられ、 前記第１の保護樹脂層は液状エポキシ樹脂に基づいて形
成され、 前記第２の保護樹脂層はシリコ−ンラバ−から成り、 前記第１の保護樹脂層は前記第２の保護樹脂層よりも大
きい硬度を有していることを特徴とする電子回路装置。1. A semiconductor device having a bump electrode, a circuit board, first and second protective resin layers, and a resin encapsulant. The first protective resin layer covers the bump electrode of the semiconductor element and is provided between the one main surface of the main body of the semiconductor element and the circuit board. The second protective resin layer is provided so as to cover the other main surface of the main body of the semiconductor element, and the resin sealing body is the second protective resin layer The first protective resin layer is formed based on a liquid epoxy resin, the second protective resin layer is made of silicone rubber, and the first protective resin layer is provided so as to cover the circuit board. The resin layer is the same as the second protective resin layer. Electronic circuit device, characterized in that a is also large hardness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35233297A JP3147157B2 (en) | 1997-12-05 | 1997-12-05 | Electronic circuit device including semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35233297A JP3147157B2 (en) | 1997-12-05 | 1997-12-05 | Electronic circuit device including semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11176882A JPH11176882A (en) | 1999-07-02 |
| JP3147157B2 true JP3147157B2 (en) | 2001-03-19 |
Family
ID=18423340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35233297A Expired - Fee Related JP3147157B2 (en) | 1997-12-05 | 1997-12-05 | Electronic circuit device including semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3147157B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8955418B2 (en) | 2013-03-08 | 2015-02-17 | Black & Decker Inc. | Threaded fastener driving tool |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5143451B2 (en) | 2007-03-15 | 2013-02-13 | オンセミコンダクター・トレーディング・リミテッド | Semiconductor device and manufacturing method thereof |
| JP5921723B2 (en) * | 2013-01-11 | 2016-05-24 | 三菱電機株式会社 | Semiconductor device |
-
1997
- 1997-12-05 JP JP35233297A patent/JP3147157B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8955418B2 (en) | 2013-03-08 | 2015-02-17 | Black & Decker Inc. | Threaded fastener driving tool |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11176882A (en) | 1999-07-02 |
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