JP3170201B2 - Equipment for manufacturing lead frames for semiconductor devices - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device lead frame manufacturing facility, and more particularly, to a high frequency induction heating means for removing internal residual stress at a desired position in a semiconductor device lead frame manufacturing line. The present invention relates to a semiconductor device lead frame manufacturing facility.

[0002]

2. Description of the Related Art Recently, with the diversification of functions of a semiconductor device using a lead frame having a conductor lead pattern composed of an inner lead and an outer lead, the conductor lead pattern tends to have more pins and to be miniaturized.
For this reason, the semiconductor device lead frame manufacturing equipment in which the conductor lead pattern is miniaturized runs in a heating atmosphere in a bright annealing furnace in a state where a continuous body of an intermediate-shaped lead frame is sandwiched and pressed for each conductor lead pattern. While letting
A heat treatment that removes internal residual stress while pressurized, and corrects internal residual strain, warpage, bending, and other residual strains in the constrained state of the intermediate-shaped lead frame continuum In general, the residual stress removing annealing means is configured so as to be separated from the production line of the semiconductor device lead frame by a separate line.

[0003]

However, in the case of using the divided production equipment as described above, the residual strain such as the internal residual strain in the constrained state and the residual strain such as warpage or bending staying in the continuous body of the lead frame. Although it is possible to perform correction and avoid short-circuiting of fine conductor lead patterns, since the working environment of the heating atmosphere and the length of the heat treatment means are lengthened, this heat treatment means is required during the production line of the lead frame for a semiconductor device. There is a problem that the production line becomes longer if the production line is made in-line. Therefore, the heat treatment means is separately arranged, the production line of the lead frame for semiconductor device is divided, and a transport means between each means is required, and workability is reduced and fine conductor lead patterns are damaged due to transport. There was a problem.

The present invention has been made in view of the above circumstances, and a heat treatment apparatus for removing internal residual stress remaining in a continuous body of an intermediate-shaped lead frame is inlined at a desired position in a production line. Accordingly, it is possible to provide a high quality semiconductor device lead frame by removing the residual stress remaining in the conductor lead pattern with high production efficiency without causing damage such as deformation to the conductor lead pattern of the continuous body. It is the purpose.

[0005]

According to a first aspect of the present invention, there is provided a semiconductor device lead frame manufacturing facility for forming a thin strip having a desired width from a wide strip metal thin strip. Slit processing means provided with rotating blades of different types, first shape processing means for forming a continuous body of an intermediate-shaped lead frame from which a binder for connecting the tip of an internal lead is left, and a predetermined shape of the lead frame. A coating layer forming processing means for forming a noble metal plating coating layer on a portion; and a second shape processing means for forming a required shape of the lead frame by removing the remaining binder and separating the tip of the internal lead. A semiconductor device lead frame manufacturing facility, comprising: a pair of semiconductor device lead frame manufacturing facilities that oppose a transfer line and circulate along the transfer line at a desired location. It has a pair of endless chain conveyors in which a plurality of pressure plates arranged horizontally between the end chains are arranged, and a continuous body of an intermediate-shaped lead frame is sandwiched and pressed by the pressure plates for each conductor lead pattern. A high-frequency induction heating means for continuously heating the pressure plate is connected directly or via a loop adjusting means to form a series of tandem processing lines.
A semiconductor device lead frame manufacturing facility according to a second aspect is the semiconductor device lead frame manufacturing facility according to the first aspect, wherein the high-frequency induction heating means comprises a continuous body of an intermediate-shaped lead frame. The configuration is arranged upstream or downstream of the first shape processing means to be formed. The semiconductor device lead frame manufacturing equipment according to claim 3 is the semiconductor device lead frame manufacturing equipment according to claim 1 or 2, wherein the high-frequency induction heating means includes an inner conductor lead pattern. The structure is arranged upstream or downstream of the second shape processing means for removing the binder connecting the leading ends of the leads to separate the leading ends of the inner leads.

[0006]

FIG. 1 is a block diagram of a manufacturing line showing an example of an embodiment of the present invention. As shown in the figure, a semiconductor device lead frame manufacturing facility 1 of the present invention
Reference numeral 00 denotes a slit processing means 101 for preparing a thin strip B having a desired width from a wide strip metal thin strip, and a first shape processing means 1 for forming a continuous body of an intermediate-shaped lead frame.
02, high-frequency induction heating means 103 and 103a arranged upstream and downstream thereof, film layer forming means 104 for forming a noble metal plating film layer at a desired portion of the conductor lead pattern, and a lead end of the conductor lead pattern. The second shape processing means 105 and the loop adjusting means 1
06 to form a series of production lines for semiconductor device lead frames. by this,
Internal residual stress generated by the processing history of the slit processing means 101 and / or the first shape processing means 102 can be efficiently removed without damaging the conductor lead pattern 11a.

[0007] A semiconductor device lead frame manufacturing facility according to another embodiment of the present invention, not shown, comprises a slit processing means for preparing a thin strip having a desired width from a wide strip of metal thin strip. First shape processing means for forming a continuous body of a lead frame having an intermediate shape, high-frequency induction heating means arranged upstream and downstream thereof, film layer forming and processing means for forming a noble metal plating film layer, and second shape processing means The processing means and the high-frequency induction heating means arranged upstream and downstream constitute a series of production lines for semiconductor device lead frames via loop adjusting means. Thereby, the internal residual stress generated by the processing history of the film layer forming processing means and the second shape processing means can be removed without damaging the conductor lead pattern 11a.

Here, as shown in FIGS. 3 and 5, the high-frequency induction heating means 103 applied to the semiconductor device lead frame manufacturing equipment 100 of the present invention comprises the heating means 1 shown in FIG.
Along the transport line 12 along which the continuous body C of intermediate-shaped lead frames provided in the inside 03 travels, the continuity C of the lead frame extends from the entrance 13 of the heating means 103 to the exit 14,
It has a first endless chain conveyor 19 and a second endless chain conveyor 20 circulating through external equipment such as cleaning units 15 and 16 and first and second drying units 17 and 18. In addition,
The first and second endless chain conveyors 19 and 20 correspond to the conductor lead patterns 11a of the continuum 11 of the single lead frame, respectively, and are individually divided so as to sandwich the same from both sides. A large number of pressure plates 19a and 20a are horizontally mounted between the first endless chains 19b and between the second endless chains 20b (see FIGS. 3 and 5). As a result, the pressing plates 19a and 20a of the endless chain conveyor are divided so as to correspond to the conductor lead patterns 11a.
Pressurization and heating are performed every 1a.

Further, a continuum C of an intermediate shape lead frame formed by the first shape processing means 102 of the semiconductor device lead frame manufacturing equipment 100 of the present invention is shown in FIG.
As shown in the figure, a semiconductor element mounting area 11b is provided at the center, and the semiconductor element mounting area 11b is radially arranged so as to surround the semiconductor element mounting area 11b. A plurality of connected inner leads 11d, outer leads 11e extending relative to the inner leads 11d, and a semiconductor element mounting region 1;
A support bar 11f for holding 1b and a dam bar 11g for connecting the outer lead 11e;
Furthermore, side rails 11i provided with reference pin holes 11h at a predetermined pitch at both ends thereof to support them.
And a large number of conductive lead patterns 11a having

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention configured as described above will be described with reference to the accompanying drawings. Figure 2
FIG. 7 is an explanatory view showing an outline of a manufacturing facility of the semiconductor device lead frame of FIG. 1, FIG. 2 shows a slitter processing means, FIG. 3 shows a first high-frequency induction heating means, and FIG. 5 shows a second high-frequency induction heating means, FIG. 6 shows a coating layer forming processing means, FIG.
8 shows a first shape processing means. FIG. 8 is a plan view of a continuum of an intermediate-shaped lead frame formed by a semiconductor device lead frame manufacturing facility. FIG. 9 is formed by a semiconductor device lead frame manufacturing facility. FIG. 3 is a plan view of a continuous body of a lead frame to be used.

Returning to FIG. 1, the lead frame manufacturing equipment 100 for a semiconductor device is slit from a wide metal sheet material A to a metal material B having a desired width by slit processing means 101. Then, the first high-frequency induction heating means 1
03, the first shape processing means 102, the second high-frequency induction heating means 103a, the film forming processing means 104, and the second
Are supplied to the respective transfer lines 12 via the loop adjusting means 106 to the shape processing means 105 to form a semiconductor device lead frame. Hereinafter, a slit processing means 1 for slitting a metal sheet strip material A
01 to the lead frame second shape processing means 105 will be described in order.

First, a wide metal sheet strip A of a Cu-based alloy formed through a rolling step (not shown) is continuously supplied from an uncoiler 21 to a slit processing means 101 as shown in FIG. Is slit into a plurality of thin strips B having a predetermined width corresponding to a desired conductor lead pattern 11 a and wound up by a coiler 22. Here, the thin strip material B is the coiler 21
Although the case where the winding is performed has been described, it is also possible to adopt a configuration in which a slit is formed for each strip and directly connected to the first high-frequency induction heating means 103 of the next step via a loop adjusting means.

Subsequently, the slitted metal strip B having a desired width is supplied to the transfer line 12 of the first high-frequency induction heating means 103 after being mounted on the uncoiler 21 as shown in FIG. . Then, in the first high-frequency induction heating means 103, both surfaces of the thin plate material B
2 and the pressure plates 19a, 20a of the first and second endless chain conveyors 19, 20 circulating therearound.
With a pinch. Next, the first and second pressure plates which travel between a plurality of first and second pressure roller groups 19c and 20c arranged along the transport line 12 and sandwich the plate material B are provided. 19a and 20a are pressed to maintain the strip material B in the initial state, and the high-frequency induction heating unit 2 provided in the antioxidant atmosphere is used.
3 while the first high-frequency induction heating body 23a and the second high-frequency induction heating body 23b are running in a pressurized state, the first and second pressure plates 19a, 2
Induction heating is performed by applying a high frequency of 15 to 500 KHz to Oa. The first and second pressure plates 1 thus heated
Heating is performed while both surfaces of the thin strip material B are being pressed through 9a and 20a. As a result, the internal residual stress generated in the step of forming the thin sheet material collection B by the slitter processing means 101 is removed. Correction of residual strain (permanent strain) such as swelling is performed. In addition, in the peripheral circuits of the respective endless chain conveyors outside the first high-frequency induction heating means 103, cleaning means 15, 1
6. If the drying means 17 and 18 are provided to sequentially wash and dry the first and second pressure plates that have passed through the first high-frequency induction heating means 103, damage to the metal sheet strip can be prevented. can do. Further, a roller leveler device (not shown) for dispersing the internal residual stress may be arranged upstream of the first high-frequency induction heating means 103 so that the internal residual stress is dispersed and uniformized.

Subsequently, as shown in FIG. 4, the thin strip material B from which the residual stress has been removed is converted into a conventional first shape processing means comprising a progressive die device 24 and a press processing device 25 having the die device mounted thereon. 102 is supplied intermittently via a loop adjusting means 106. Then, in the first shape processing means 102, unnecessary portions of the thin sheet material B are sequentially punched and removed by the progressive die apparatus 24 arranged in an appropriate punching order.
As shown in FIG. 8, a continuous body C of an intermediate-shaped lead frame formed by connecting a plurality of conductor lead patterns 11a of a predetermined shape with the binder 11c connected to the tips of the inner leads left uncut is formed by press working.

Further, the continuous body C of the lead frame having the intermediate shape formed by the first shape processing means is provided with the second high frequency induction heating section 23 similarly to the first high frequency induction ripening means 103. It is continuously supplied to the induction heating means 103a via the loop adjusting means 106. Then, in the second high-frequency induction heating means, as shown in FIG. 5, the first and second endless chain conveyors 19 and 20 of the first and second endless chain conveyors 19 and 20 are provided for each conductor lead pattern of the continuous body C of the intermediate-shaped lead frame. 2
, And continuously run in an antioxidant atmosphere in the same manner as the first high-frequency induction heating means 103, while keeping the pressure plate at 15 to 500 KH.
The high frequency of z is applied and the pressure plate is induction heated. The heating is performed in a state where the conductor lead pattern of the continuous body C of the intermediate lead frame is pressed through the heated pressing plate. In this way, the internal residual stress (apparent distortion) that is retained in the constrained state is removed by performing the punching, the pressing force, and the removal processing of the internal residual stress generated by coining or the like at the stage of forming the continuous body C of the intermediate shape lead frame. And a process of correcting residual distortion (permanent distortion) such as torsion, warpage, and bending.

Further, the continuous body C of the lead frame having the intermediate shape subjected to the processing for removing the internal residual stress is supplied to the transport line 12 of the conventional film layer forming and processing means 104 through the loop adjusting means 106. As shown in FIG. 6, the coating layer forming / processing means 104 includes a pre-processing step 104a, a plating processing step 104b, and a post-processing step 1b.
No. 04c, an intermediate lead frame continuum in which a noble metal plating film layer is formed on a predetermined portion of the conductor lead pattern of the intermediate lead frame continuum C and a desired portion is provided with a noble metal plating film layer C is formed.

Then, a continuous body C of a lead frame having an intermediate shape in which a plating film layer of a noble metal is formed at a desired portion.
Is a press working device 25 equipped with a progressive die device 24.
Line 12 of the second shape processing means 105 comprising
Is supplied intermittently through the loop adjusting means 106. Then, in the second shape processing means 105, as shown in FIG.
The binder 11c at the tip of the inner lead 11d of the conductor lead pattern 11a left uncut by the first shape processing means 103 is punched and removed by the progressive die device 24 attached to the press device 25 to remove the tip of the inner lead 11d. A process of separating the semiconductor device and, if necessary, a depressing process (not shown) of the semiconductor element mounting portion 11b are performed to form a continuous body of a lead frame having a predetermined shape as shown in FIG. . In addition,
It is also possible to perform a process of intermittent cutting so as to obtain a strip-shaped lead frame D containing a required number of conductor lead patterns.

Thereafter, the lead frame connector 11 or the strip-shaped lead frame D formed by the second shape processing means 105 is supplied to a semiconductor device assembling step (not shown), and is subjected to die bonding, wire bonding, and the like. A process such as resin sealing is performed to form a semiconductor device.

[0019]

As described in the above embodiment, since the high frequency induction heating means is provided in the semiconductor device lead frame manufacturing equipment of the present invention, local heating of the pressure plate becomes possible. In addition, the working environment of the heat treatment is better than other heat treatment methods, and the equipment length can be shortened. As a result, the internal residual stress remaining in the continuous body of the lead frame is removed, the internal residual strain remaining in the state of being restrained by a binder or the like is prevented from being released, and the tip of the inner lead generated by press working or the like is removed. Heat treatment process for correcting residual strain (permanent strain) such as twisting and warping of semiconductor devices can be made in-line in the production line of semiconductor device leadframes, and semiconductor device leadframe manufacturing equipment is divided. Therefore, it is possible to form a continuous production line, thereby simplifying transportation between facilities, significantly improving workability, and preventing damage to minute leads of a lead frame for a semiconductor device. Can be.

[Brief description of the drawings]

FIG. 1 is a block diagram showing an embodiment of a semiconductor device lead frame manufacturing facility.

FIG. 2 is an explanatory view showing an outline of a slitter processing means of a semiconductor device lead frame manufacturing facility.

FIG. 3 is an explanatory view showing an outline of a first high-frequency heating means of a manufacturing equipment for a semiconductor device lead frame.

FIG. 4 is an explanatory diagram illustrating an outline of a first shape processing of a manufacturing facility of a lead frame for a semiconductor device.

FIG. 5 is an explanatory view showing an outline of a second high-frequency induction heating means of a semiconductor device lead frame manufacturing facility.

FIG. 6 is an explanatory view showing an outline of a coating layer forming / processing means of a semiconductor device lead frame manufacturing facility.

FIG. 7 is an explanatory view showing an outline of a second shape processing means of a manufacturing facility for a semiconductor device lead frame.

FIG. 8 is a plan view of a continuum of an intermediate-shaped lead frame formed by a semiconductor device lead frame manufacturing facility.

FIG. 9 is a plan view of a continuum of a lead frame formed in a semiconductor device lead frame manufacturing facility.

Claims (3)

(57) [Claims] 1. A slit processing means having a pair of rotating blades for forming a thin strip having a desired width from a wide strip of thin metal strip, and a lead having an intermediate shape in which a binder for connecting the tip of an internal lead is left. First shape processing means for forming a continuous body of the frame, coating layer forming processing means for forming a noble metal-plated coating layer on a predetermined portion of the lead frame, and an inner lead tip by removing the remaining binder And a second shape processing means for forming a required shape of the lead frame by separating the lead frame for a semiconductor device, wherein the semiconductor device lead frame manufacturing equipment at a desired location, A pair of endless chain conveyors arranged with a plurality of pressurized plates laid across a pair of endless chains facing the transfer line and circulating along the transfer line; In a state where the continuous body of the lead frame of the intermediate shape is sandwiched and pressed for each conductor lead pattern, the high-frequency induction heating means for continuously heating the pressure plate is directly connected or connected via a loop adjusting means, and a series of A semiconductor device lead frame manufacturing facility comprising a tandem processing line. 2. The apparatus according to claim 1, wherein said high-frequency induction heating means is arranged upstream or downstream of a first shape processing means for forming a continuous body of an intermediate-shaped lead frame. Equipment for manufacturing lead frames for semiconductor devices. 3. The high-frequency induction heating means is disposed upstream or downstream of a second shape processing means for removing a binder connecting the tip of the inner lead of the conductor lead pattern and separating the tip of the inner lead into individual pieces. 3. The facility for manufacturing a lead frame for a semiconductor device according to claim 1, wherein the lead frame has a configuration.