JP3201501B2 - Method of manufacturing package component and method of forming heat spreader for package component - Google Patents

Abstract

PURPOSE:To provide a method, by which defective junctions such as void between electronic parts such as LSI chips and a heat spreader for accelerating heat dissipation is prevented, the heat spreader having the excellent heat dissipation property is formed and a package part having the heat spreader, whose manufacturing process is simple, is formed. CONSTITUTION:An electrode 2 of an LSI chip is directed upward, and fixed to a polyimide tape 8. Then, a resin layer 9 is formed on the LSI chip l and the polyimide tape 8 other than a part of the electrode 2. An opening part 10a for exposing the electrode 2 and an opening part for exposing the rear surface of the LSI chip 1 are provided respectively. A metal plated film, which becomes a lead 13 to be connected to the electrode 2, is provided at the opening part 10a and the resin layer 9. A metal plated film, which becomes a heat spreader 12, is formed at the opening part 10b.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the manufacture of package parts.
Manufacturing method and heat spreader for this package component
Forming method is relates to the particular preparation how the packaging component to have a method and such a heat spreader to <br/> form heat over preparative spreader heat generating electronic components.

[0002]

2. Description of the Related Art A heat spreader is formed by bonding a copper plate or an aluminum plate to the back surface of an LSI chip using solder or resin for the purpose of releasing heat from the LSI chip having a large amount of heat in package parts of the LSI chip. To form Figure 11 is a step of junction heat spread da <br/> according to the prior art to the LSI chip, and is a diagram showing a structure of a heat spreader with the package parts. In the figure, 1 is an LSI chip, 2 is an electrode of the LSI chip, 3 is a heat spreader made of, for example, a copper plate, and 4 is a solder sheet.

In FIG. 11A, an LSI chip 1 is placed on a heat spreader 3 with a solder sheet 4 interposed therebetween. Then, the LSI chip 1 is joined to the heat spreader 3 by melting the solder sheet as shown in FIG. When a copper plate is used as the heat spreader 3, the joint surface of the copper plate is usually plated with nickel in advance.

When the LSI chip 1 on which the heat spreader of FIG. 11B is formed is mounted on a substrate, for example, pads (not shown) on the substrate and electrodes 2 of the LSI chip 1 are mounted.
When the heat spreader 3 is connected to the substrate, the surface of the heat spreader 3 is die-bonded to a predetermined position of the substrate with an adhesive or solder, and the electrode 2 of the LSI chip and the pad of the substrate are connected by a wire or the like (not shown). Further, it packages the LSI chip formed of the heat spreader as shown in FIG. 11 (b), (not shown) to form a packaging component or heat spreader 3 across the base film 6 as shown in FIG. 11 (c) and the LSI chip 1 and forms a mounting package components.

FIG. 12 shows a conventional technique, for example, A
It is a figure which shows the process of forming an electroless copper plating film on the plastic surface of BS (Acrylonitrile-Butadiene-Styrene). In the figure, reference numeral 7 denotes an ABS plastic plate, and reference numeral 8 denotes a nucleus of electroless plating serving as a catalyst for accelerating plating, for example, using palladium. Reference numeral 9 denotes an electroless copper plating film formed on the ABS plastic plate 7. In FIG.
The ABS plastic plate 7 as shown in (a) a saturated aqueous solution of the heated chromium oxide 70 ° C. immersion 5 minutes,
The surface is roughened as shown in FIG. This was immersed for 10 minutes in a palladium chloride aqueous solution having a predetermined concentration, and immersed for two minutes in tin chloride aqueous solution nucleus 8 of the electroless copper plating as in (c), the surface of the ABS plastic plates 7 Form.
Then, as shown in (d), immersed in an electroless copper plating solution for 10 minutes.
Then , an electroless copper plating film 9 is formed.

[0006]

As shown in FIG. 11, when an LSI chip and a heat spreader are joined by melting a solder sheet 4, the chip is heated in a furnace at 230 ° C. and cooled to room temperature in a reducing atmosphere. . At this time, as shown in FIG.
There occur. This void reduces the heat conduction from the heated LSI chip 1 to the heat spreader 3 and causes the LSI chip with the heat spreader as described above or the LSI chip and the heat spreader to sandwich the base film 6 as shown in FIG. However, there is a problem that it is difficult to dissipate the heat from the LSI chip.

[0007] According to the method for forming an electroless plating film shown in FIG. 12, the etching by, step requires der because of corroding the surface of the member forming the plating film, the very thin material electroless copper plating film Is difficult to form, and chromium oxide used for etching is very poisonous, and there is a problem that it is difficult to treat waste liquid.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and there is provided a method of forming a heat spreader for efficiently releasing heat from an electronic component such as an LSI chip, and a method of forming a heat spreader by a simple manufacturing process. An object of the present invention is to provide a method of manufacturing a package component with a heat spreader having good conductivity.

[0009]

According to the present invention, there is provided a method of manufacturing a package component, comprising the steps of: fixing an electronic component at a predetermined position on a substrate; forming a resin layer on the electronic component and the substrate; Forming an opening in the substrate with the attached surface exposed ;
Forming a first metal plating layer serving as a redder;
This electrode is connected to the resin layer formed excluding the electrode of the
Forming a second metal plating layer to be a continuous lead
It is those that contain a door.

A step of fixing the electronic component to one surface of the substrate facing the surface having the electrodes of the electronic component, at least a part of the surface of the electronic component attached to the substrate,
A step of forming an opening in the substrate where the electrode of the electronic component is exposed, a lead connecting the electrode to the opening and the back surface of the substrate, and a metal plating serving as a heat spreader on the surface of the electronic component attached to the substrate And a step of forming a film.

Further, the method includes a step of forming an opening for exposing the surface of a heat generating portion of the electronic component, and forming a metal plating film serving as a heat spreader in the opening.

[0012] Also, a step of arranging the electronic component on the mounting base with the surfaces having the electrodes of the electronic part facing each other, excluding at least a part of the back surface of the mounting surface of the electronic component with the mounting base,
And a step of forming a resin layer so as to cover the surface of the electronic component having electrodes, a step of forming a metal plating film on the back surface of the mounting surface with the mounting base of the electronic component, and a step of separating the electronic component from the mounting base it is those that contain a door.

[0013]

The heat spreader formed on the electronic component is formed of a metal plating film, so that the bonding failure between the electronic component and the heat spreader is eliminated, and the heat conductivity from the electronic component to the heat spreader is improved.

Further, since the method includes a step of forming a lead to be connected to an electrode of an electronic component mounted on the package component and a process of forming a heat spreader, the manufacturing process of the package component is greatly simplified.

[0015] Since a heat spreader is formed in a heat generating portion of the electronic component, heat is dissipated effectively.

A metal plating film is formed on the back surface of a semiconductor substrate on which a plurality of electronic components are arranged , and the semiconductor substrate is separated for each electronic component, so that a heat spreader having good heat conduction from the electronic components can be formed by a single plating. It is formed on a plurality of electronic components.

A resin layer is formed so as to remove at least a part of the back surface of the mounting surface of the electronic component with the mounting base and to cover the surface of the electronic component with the electrode, and the mounting surface of the electronic component with the mounting base. Since the metal plating film is formed on the back surface of the substrate, the plating solution comes into contact with the surface of the electrode during plating, thereby preventing corrosion of the electrode and the surface of the electrode and forming a heat spreader having good thermal conductivity.

[0018]

[Embodiment 1] Hereinafter, an embodiment of the present invention will be described. FIG. 1 shows a package component with a heat spreader, QTP, showing this embodiment.
FIG. 4 is a process chart showing a method for forming a (Quad-Flat Tape-Carrier Package). QTP is a package component that conducts to an LSI chip by using copper foil leads formed on a polyimide tape. In FIG. 8, reference numeral 8 denotes a polyimide tape that is a substrate on which the LSI chip is mounted, and 9 denotes an LSI chip and a polyimide tape. 8 is an ultraviolet light curable resin coating, 10a is an opening formed in the coating 9 exposing the electrode to the surface, and 10b is an LSI chip polyimide tape 8.
An opening formed on the polyimide tape 8 exposing the entire surface attached to the opening, 11 is an opening 10a, a metal plating film formed on the surface of the coating 9, and 12 is an opening 10
b is a heat spreader, 13 is a lead connected to an electrode, 14 is a sealing resin for sealing an LSI chip,
Other symbols are the same as those in the conventional technique.

A method for forming a package component having the above structure will be described. First, as shown in (a), the LSI chip 1 is die-bonded to a predetermined position of the polyimide tape 8 using solder with the electrodes 2 facing up, and as shown in (b).
An ultraviolet light curable resin film 9 (40 μm) is formed on the entire surface of the polyimide tape 8 including the LSI chip 1 by using a spin coater, and openings 10a and 10b are formed by photolithography as shown in FIG. , Electrode 2 and L
The back surface of the SI chip 1 is exposed. Next, as shown in (d), the surface of the coating 9 including the opening 10a is subjected to electroless copper plating to form an electroless copper plating film 11, while the opening 10b formed in the polyimide tape 8 is also formed. An electroless copper plating film 12 serving as a heat spreader is formed. Further, in (e), the lead 1 is connected to the electrode 2 by a photolithography technique, and the plating film 11 is selectively removed while leaving a portion where a lead is formed at a necessary portion.
Form 3 In forming the leads, vapor deposition of gold, silver or the like may be used instead of the plating film, or the leads may be directly drawn by using a conductive paste. Thereafter, unnecessary portions of the polyimide tape 8 are removed as shown in (f), and the sealing resin 1 is removed as shown in (g).
Sealed from both surfaces of the polyimide tape 8 including LSI chip 1 in 4 and finally you form the external connection terminals by molding the lead 13. The electroless copper plating film formed in the opening 10b directly forms a heat spreader for releasing heat from the LSI chip. When the thickness of the heat spreader 12 formed here is smaller than a desired thickness, it is effective to solder a metal plate to the heat spreader 12.

As described above, a package component having a heat spreader is formed. However, by forming the heat spreader with a plating film, it is not necessary to bond the LSI chip and the heat spreader with solder or the like as in the conventional case. Inevitable void generation can be fundamentally eliminated. Therefore, the thermal conductivity is improved. Further, in such a manufacturing process, a manufacturing process of a package component with a heat spreader can be greatly simplified by forming a lead and a heat spreader in the same step without using a metal material to be a heat spreader in advance.

Embodiment 2 FIG. FIG. 2 is a manufacturing process diagram of a package component QTP or LCC (Leadless Chip Carrer) showing another embodiment of the present invention. In this embodiment, a package component is formed by mounting an LSI chip on a polyimide tape 8 with the surfaces having its electrodes facing each other, and the reference numerals in FIG.

A method of manufacturing the above package component will be described. As shown in FIG. 2A, the electrode 2 and the polyimide tape 8
Face-to-face (hereinafter referred to as face-down)
The SI chip 1 is arranged and fixed, and the openings 10a and 10b are formed on the back side of the polyimide tape 8 so as to expose the electrode 2 and a part of the surface having the electrode in (b). The openings 10a and 10b are formed by an excimer laser, a carbon dioxide laser,
It is formed by ablation using a YAG laser or the like. An electroless copper plating film 11 is formed on the entire surfaces of the openings 10a and 10b and the back surface of the polyimide tape 8 as shown in (c), and the plating film 11 is formed by photolithography as shown in (d). The lead 13 connected to the electrode 2 and the LSI chip 1 are selectively removed by leaving a place.
The exposed portions 10b of the surface having the electrodes 2 that form a heat spreader 12. Further, unnecessary portions of the polyimide tape 8 are removed as shown in (e), sealed with a sealing resin 14 as shown in (f), and leads 13 are formed to form external connection terminals. The QTP is obtained by the above, but the glass epoxy substrate 8a is used instead of the polyimide tape 8.
The use, as compared with the state of the step of (e) (g), to remove unnecessary portions of the lead 13, LCC is Ru obtained by forming a sealing resin 14 for sealing the LSI chip 1.

The manufacturing process of a package component for forming a heat spreader as described above makes it possible to form a heat spreader on the electrode side of an LSI chip, which has been difficult in the past, and to prevent the generation of voids as in the first embodiment. The process can be simplified.

Embodiment 3 FIG. FIG. 3 is a manufacturing process diagram of a package component showing another embodiment of the present invention. In this embodiment, when a heat spreader is formed on the surface of the heat generating portion of the LSI chip, 10c
Is a thermal via hole formed in a polyimide tape serving as a substrate to expose a heat-generating portion of the LSI chip, and other reference numerals are the same as those in FIG.

FIG. 3A shows the opening 10b of FIG.
Instead of this, a thermal via hole 10c for exposing only the heat-generating portion of the LSI chip 1 is formed, and is formed by selective removal by photolithography as in the first embodiment. Further, as shown in (b), an electroless copper plating 11 is applied to the opening 10a and the coating 9 , while a heat spreader 12 is formed in the thermal via hole 10c by electroless copper plating. Then, as shown in (c), the lead 13 connected to the electrode 2 is formed by selective removal by photolithography. Subsequent steps of forming the package component are the same as those shown in FIGS. By forming the heat spreader in a place where heat radiation is required, such as a part where heat generation is particularly large, effective heat dissipation is performed while maintaining the strength of the polyimide tape.

In the case where the heat spreader is formed on the surface of the LSI chip having the electrodes as in the second embodiment, the heat spreader may be formed only at a necessary portion. Further, if a metal material is soldered to the heat spreader formed in this embodiment, a greater heat radiation effect can be obtained.

Embodiment 4 FIG. FIG. 4 is a process chart showing a heat spreader forming method according to another embodiment of the present invention. In the drawing, reference numeral 15 denotes an electrolytic copper formed on the back surface of a silicon wafer on which a plurality of LSI chips are arranged. A plating film 16 is a heat spreader formed by the electrolytic copper plating film 15.

FIG. 4A shows a silicon wafer in which a plurality of LSI chips 1 are arranged on a semiconductor substrate before dicing. An electrolytic copper plating film 15 is formed on the back surface of the silicon wafer as shown in FIG.
Dicing into SI chip. By dicing with the plating film 15, the heat spreader 16 formed on the LSI chip as it is is obtained. By forming the heat spreader in this way, solder bonding is not required, thereby preventing the occurrence of voids, and since the heat spreader is formed simultaneously on a plurality of LSI chips, the process of forming the heat spreader is greatly simplified. Is done.

If a coating such as an epoxy resin for protecting the LSI chip from the plating solution used for the electrolytic copper plating film is formed on the surface of the LSI chip 1 on which the electrode 2 is formed, the electrode or silicon using the plating solution is formed. Chip corrosion can be prevented. The same effect can be obtained by forming an electroless copper plating film instead of the above electrolytic copper plating film.

Embodiment 5 FIG. FIG. 5 is a process chart of a heat spreader forming method showing another embodiment of the present invention. Reference numeral 17 denotes an epoxy resin layer formed on the polyimide tape 8 so as to cover the surface of the LSI chip 1 having the electrodes 2, and reference numeral 18 denotes an electroless copper plating film formed so as to cover the back surface of the LSI chip 1.

As shown in FIG. 5A, at least one LS
The I chip 1 is placed face down on the polyimide tape 8, and an epoxy resin layer 17 is formed so as to cover the surface having the electrodes 2 as shown in FIG. An electrolytic copper plating film 18 is formed thereon. In (d), the polyimide tape 8 and the epoxy resin layer 17 are diced.
Is peeled off. As described above, the formation of the heat spreader simplifies the process while preventing the generation of voids, and provides a heat spreader having a size larger than that of the LSI chip. In addition, by forming the epoxy resin 17 as described above, corrosion of the electrodes and the silicon chip by the plating solution during the formation of the electroless copper plating is prevented. Furthermore, if only the polyimide tape 8 is peeled off, leaving the epoxy resin 17, it becomes possible to handle the LSI chip 1 as a package component in which only the electrode 2 is exposed.

Embodiment 6 FIG. FIG. 6 is a process chart showing a heat spreader forming method according to another embodiment of the present invention. In the figure, reference numeral 15 denotes an electrolytic plating film formed on the electroless copper plating film 18, and other reference numerals are the same as those in FIG. (A) is the same as FIG. 5 ( c ), and an electroless copper plating film 18 is formed on the upper surface.
In (b), the electrolytic plating film 15 is formed on the electroless copper plating film 18. Further, the polyimide tape 8 and the epoxy resin layer 17 are separated by dicing as shown in ( c ).

By forming an electroless plating film first and then forming an electrolytic plating film, a plating film can be formed more easily than a case of only electroless plating, and a thick heat spreader can be formed in a sufficiently short time. Also, since there is no void at the time of solder joining, heat conduction is good. Since at the same time forming a heat spreader to a plurality of LSI chips, process simplification is FIG.

Embodiment 7 FIG. FIG. 7 is a process chart showing a method of forming a heat spreader according to another embodiment of the present invention. In the figure, 19 is a eutectic solder sheet having a size of 12 × 12 × 0.3 mm, and 20 is formed by electroless copper plating or electrolytic copper plating on the back surface of the LSI chip 1 by the heat spreader forming method of Examples 4 to 6, for example. First heat spreader, 21
Is a copper plate having a size of 12 × 12 × 1.5 mm, which becomes a second heat spreader. The surface of the copper plate 21 is plated with nickel so that the solder is easily wetted.

First, as shown in (a), the solder sheet 19 is placed on the copper plate 21, the LSI chip 1 on which the heat spreader 20 is formed is placed, and the chip is left on a 230 ° C. hot plate for 5 minutes. Then, when cooled at room temperature,
Soldering is performed as shown in FIG. By forming the heat spreader in this way, even when the void 5 is formed in the solder portion as shown in FIG. 3B, since the heat spreader 20 is present between the voids, the void 5 is LS.
The adverse effect of the void 5 is much smaller than that in the case where it exists in contact with the I chip 1.

Embodiment 8 FIG. Conventionally, the activation method using a colloid of metal hydroxide as a nucleus is much more costly than the activation method using a commonly used electroless plating nucleus made of palladium for forming an electroless copper plating film. Although having the advantage of being low, the adhesion of the electroless copper plating film was poor and non-uniform. Therefore, as shown in the prior art, the surface was previously roughened by etching before attaching the nucleus.

FIG. 8 is a process diagram of forming a strong electroless plating film according to an embodiment of the present invention, and particularly shows a procedure of an activation process at the time of forming an electroless copper plating film. In the figure, 30 is a member to be subjected to an electroless copper plating process, for example, an ABS plastic plate, and 31 is an A for an activation process.
A core 32 of the electroless plating to be attached to the BS plastic plate 30, and an electroless copper plating film 32 formed on the ABS plastic plate.

In FIG. 8, the ABS plastic plate 3 shown in FIG.
The nucleus 31 is attached to the surface of the zero. As the nucleus 31, a mixed hydroxide colloid composed of Cu and Ni is employed. For example, CuSO ₄ and NiSO ₄ are mixed at a predetermined ratio, and Na ₂ C
The colloid solution whose pH was adjusted with an O ₃ aqueous solution was used as shown in FIG .
As described above, it is applied to the surface of the ABS plastic plate 30. Further, by immersing in the electroless copper plating solution, the plating solution starts to adhere to the surface from the nucleus 31, and as shown in (c),
An electroless copper plating film 32 is formed on the entire surface . By using a mixed hydroxide colloid composed of a plurality of metals, such as Cu and Ni, as a nucleus for forming a plating film, it is possible to obtain an electroless copper plating film which is more firmly adhered and excellent in uniformity.

FIG. 9 is based on JIS standard C6481.
It shows the results of a peeling test of an electroless copper plating film by an activation treatment using a nucleus of only Cu colloid and a nucleus of hydroxide colloid composed of a plurality of Cu-Ni metals. 0.32-0.
While a peeling force of 52 kg / cm is required, C
For the u-Ni colloid, a peeling force of 1.63 to 2.14 kg / cm was required. Therefore, the degree of adhesion of the formed plating film was dramatically increased by using a colloid of a plurality of metals.

In general, an etching treatment for roughening the surface is performed as a pre-treatment before the activation treatment. In this case, a highly toxic CrO ₃ aqueous solution is used. This is intended to increase the degree of adhesion by appropriately roughening the surface of the object to be plated. FIG. 10 shows the degree of etching (expressed in etching time), that is, the peel strength (kg / cm) of the electroless plating film with respect to the surface roughness, and palladium was used as a nucleus for plating. Stuff, C
A test was performed using a u-Ni mixed colloid (the mixing ratio of Cu and Ni was 2: 1). As can be seen from the figure, Pd requires a certain amount of etching treatment in order to increase the adhesion, but the activation treatment using the Cu-Ni mixed colloid has a stable peeling strength regardless of the degree of etching, and particularly, The electroless plating film has strong adhesion without having to roughen the surface by etching.

Embodiment 9 FIG. In Example 8, an activation treatment for forming a plating film was performed using Cu as a core of a mixed hydroxide colloid of Ni. When CuSO ₄ and NiSO ₄ are each colloided with an aqueous NaOH solution, the Cu colloid is negatively charged and the Ni colloid is positively charged between pH 6.90 and 9.85. Therefore, p
By setting H to a predetermined value, changing the mixing ratio of the Cu colloid and the Ni colloid, controlling the charge of the mixed colloid, and using the activation treatment, it is possible to form an electroless plating film having a large adhesion degree. it can.

For example, in the test shown in FIG.
Can be positively charged as a whole by mixing 2: 1. Outside of the strongly acidic region, it is intended to promote adhesion to the negatively charged ABS plastic.
In addition, if the mixing ratio is reversed, the whole is charged negatively, so that the adhesion of nuclei to the positively charged substance can be promoted.

Conversely, by setting the mixing ratio of the Cu colloid and the Ni colloid to a predetermined value and changing the pH of the mixed solution, the charging of the mixed colloid can be controlled, and the mixed colloid is used for the activation treatment. As a result, an electroless plating film having a high degree of adhesion can be formed. Similarly, the mixed colloid is controlled in accordance with the charged state of the member on which the electroless plating is performed, thereby promoting the adhesion of the nucleus to the member.

[0044]

As described above, according to the method for manufacturing a package component of the present invention, a step of fixing an electronic component at a predetermined position on a substrate, a step of forming a resin layer on the electronic component and the substrate, The method includes a step of forming an opening in which the mounting surface of the electronic component with the substrate is exposed, and a step of forming a metal plating film serving as a heat spreader in the opening. Therefore, it is possible to obtain a package component having a heat spreader having good heat conductivity.

According to the method of manufacturing a package component of the present invention, a step of forming a first metal plating film serving as a heat spreader in an opening and a step of forming this electrode on a resin layer excluding an electrode of an electronic component are performed. because comprising forming a second metal-plated film as a lead to be connected to the lead and the heat spreader having a packaging component is formed at the same time, the manufacturing process can be simplified, and good thermal conductivity heat spreader Is obtained.

According to the method for manufacturing a package component of the present invention, the step of fixing the electronic component to one surface of the substrate by facing the surface having the electrodes of the electronic component, and the step of fixing the mounting surface of the electronic component to the substrate. A step of forming at least a part and an opening on which the electrode of the electronic component is exposed in the substrate, a lead connected to the electrode on the opening and the back surface of the substrate, and a mounting surface of the electronic component with the substrate; in so comprising forming a metal plating film serving as a heat spreader, an effect that similarly while simplifying the manufacturing process and a good heat spreader thermal conductivity can be easily formed on the surface having the electrodes of the electronic component.

According to the method of manufacturing a package component of the present invention, the opening for exposing the surface of the electronic component is formed on the surface of the heat generating portion of the electronic component, and the metal plating film serving as a heat spreader is formed in the opening. Since it is formed, only a necessary portion of the substrate on which the electronic component is mounted is opened, so that it is possible to form a heat spreader that performs effective heat conduction while maintaining the strength of the substrate.

According to the method of forming a heat spreader of the present invention, a step of forming a metal plating film on a back surface of a surface of a semiconductor substrate on which a plurality of electronic components are arranged, having electrodes of the electronic components; Since the method includes a step of separating the substrate for each electronic component, it is possible to form a plurality of electronic components with a heat spreader having good heat conductivity at one time, and to simplify the manufacturing process.

According to the heat spreader forming method of the present invention, the step of arranging the electronic component on the mounting table with the surface having the electrodes of the electronic component facing each other includes the step of: Forming a resin layer so as to cover at least a part of the electronic component having an electrode , and forming a metal plating film on a back surface of a mounting surface of the electronic component with a mounting base; Since it includes the step of separating the parts from this mounting base,
It is possible to prevent corrosion of the electrode and the surface having the electrode due to the plating solution coming into contact with the electrode portion, and to form a heat spreader having good thermal conductivity.

According to the method of forming a heat spreader of the present invention, the step of forming a metal plating film comprises:
After forming the electroless plating film so as to cover the back surface of the mounting surface with the mounting base of the electronic component, the method includes the step of forming the electroplating film on the electroless plating film, so that the heat spreader having a large thickness in a short time Can be formed on the electronic component.

According to the electroless plating film forming method of the present invention, the mixed hydroxide colloid having a plurality of metal hydroxides is attached to the member on which the plating film is formed, and then the electroless plating solution is supplied. Therefore, there is no need for an etching step for roughening the surface to be plated, and an effect of forming an electroless plating film having excellent adhesion can be obtained.

[Brief description of the drawings]

FIG. 1 is a process chart of a manufacturing process of a package component with a heat spreader shown in Embodiment 1 of the present invention.

FIG. 2 is a process chart of a manufacturing process of a package component with a heat spreader according to a second embodiment of the present invention.

FIG. 3 is a process diagram of a manufacturing process of a package component with a heat spreader according to a third embodiment of the present invention.

FIG. 4 is a process chart of a process of forming a heat spreader on an electronic component according to a fourth embodiment of the present invention.

FIG. 5 is a process chart of a process of forming a heat spreader on an electronic component according to a fifth embodiment of the present invention.

FIG. 6 is a process chart of a process of forming a heat spreader on an electronic component according to a sixth embodiment of the present invention.

FIG. 7 is a process chart of a process of forming a heat spreader on an electronic component according to a seventh embodiment of the present invention.

FIG. 8 is a process chart of an electroless plating film forming process shown in Embodiment 8 of the present invention.

FIG. 9 is a data diagram showing the peeling strength of an electroless plating film formed according to Example 8 of the present invention.

FIG. 10 is another data diagram showing the peel strength of the electroless plating film formed according to the eighth embodiment of the present invention.

FIG. 11 is a process diagram illustrating a method of forming a heat spreader on an electronic component according to the related art, and a cross-sectional view illustrating a package component on which the heat spreader is mounted.

FIG. 12 is a process diagram showing a method for forming an electroless copper plating film according to the related art.

[Description of Signs] 1 LSI chip 2 Electrode 8 Polyimide tape 9 UV curable resin film 10 Opening 11 Metal plating layer 12 Heat spreader 13 Lead 15 Electrolytic copper plating film 16 Heat spreader 17 Epoxy resin layer 18 Electroless copper plating film 30 ABS plastic Plate 31 Plating nucleus 32 Electroless copper plating film

──────────────────────────────────────────────────続 き Continuing on the front page (72) Susumu Hoshinouchi 8-1-1, Tsukaguchi-Honmachi, Amagasaki-shi Mitsubishi Electric Machinery Co., Ltd. Production Engineering Research Laboratory (72) Inventor Yasuo Kawashima 8-1-1, Tsukaguchi-Honmachi, Amagasaki-shi No. Mitsubishi Electric Corporation In-house Research Laboratory (56) References JP-A-54-6464 (JP, A) JP-A-62-241347 (JP, A) (58) Fields studied (Int. Cl. ⁷ , (DB name) H01L 23 / 28,23 / 50,21 / 56

Claims (6)

(57) [Claims] A step of fixing the electronic component to a substrate with the surface of the electronic component having electrodes facing up; a step of forming a resin layer on the electronic component and the substrate except for the electrodes; A step of forming an opening on the substrate where a mounting surface of the component with the substrate is exposed; a step of forming a first metal plating film serving as a heat spreader in the opening; and connecting the electrode to the resin layer A method for manufacturing a package component, comprising a step of forming a second metal plating film serving as a lead to be formed. 2. A step of fixing the electronic component to one surface of a substrate facing the surface having the electrodes of the electronic component, and exposing at least a part of a mounting surface of the electronic component to the substrate and the electrodes. Forming a formed opening on the substrate, forming a lead connected to the electrode on the opening and the back surface of the substrate, and forming a metal plating film serving as a heat spreader on a mounting surface of the electronic component with the substrate. A method for manufacturing a package component, comprising a step. 3. A process for forming an opening exposing the surface of the electronic component, according to claim 1 or請 the opening is characterized in that to expose the surface of the heating portion of the electronic component
The method for manufacturing a package component according to claim 2 . 4. A facing the surface having the electrodes of the electronic component, except placing the electronic component on the mount, at least a portion of the back surface of the mounting surface of the mount of the electronic component, and a step of forming a resin layer to cover the surface having the electrodes of the electronic component, a step of forming a metal plating film on the mounting surface between the mount electronic component, the step of disconnecting the electronic component from the mount A method for forming a heat spreader, comprising: 5. The step of forming a metal plating film includes forming an electroless plating film so as to cover a back surface of a mounting surface of the electronic component with a mounting table, and then forming the electrolytic plating film on the electroless plating film. The method for forming a heat spreader according to claim 4 , further comprising a forming step. 6. The heat spreader according to claim 4 , further comprising a step of bonding a metal material serving as another heat spreader to a metal plating film serving as a heat spreader formed on the surface of the electronic component. Method.