JP3205638B2 - Manufacturing method of impregnated cathode - Google Patents
Manufacturing method of impregnated cathodeInfo
- Publication number
- JP3205638B2 JP3205638B2 JP09384493A JP9384493A JP3205638B2 JP 3205638 B2 JP3205638 B2 JP 3205638B2 JP 09384493 A JP09384493 A JP 09384493A JP 9384493 A JP9384493 A JP 9384493A JP 3205638 B2 JP3205638 B2 JP 3205638B2
- Authority
- JP
- Japan
- Prior art keywords
- particles
- tungsten
- binary
- barium
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Powder Metallurgy (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、高電流密度を必要とす
る電子管に使用される含浸型陰極の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing an impregnated cathode used for an electron tube requiring a high current density.
【0002】[0002]
【従来の技術】従来、含浸型陰極はタングステン
(W)、モリブデン(Mo)等高融点金属の粒子を焼結
し、それに無酸素銅等を溶融含浸させて所定の形状に機
械加工し、その後真空中での加熱又は酸による溶解等で
銅を除去するいわゆる脱銅を行ない、しかる後電子放射
性物質を溶融含浸し、タングステンワイヤブラシ、アル
ミナ研磨布等により研磨して、付着している余分な電子
放射性物質を除去するといった工程で製造された。その
フローチャートを図2に示す。但し、このフローチャー
トでは検査工程その他本発明とは関わりのない枝葉末節
の工程は省略してある。なお、図中高融点金属としてタ
ングステン(W)、電子放射性物質としてBaCO3、
CaCO3、Al2O3のそれぞれを採用している。2. Description of the Related Art Conventionally, an impregnated cathode sinters particles of a high melting point metal such as tungsten (W) or molybdenum (Mo), melts and impregnates it with oxygen-free copper, etc., and machine-processes it into a predetermined shape. The so-called copper removal is performed to remove copper by heating in a vacuum or dissolving with an acid, etc., and then melt-impregnating with an electron-emitting substance, polishing with a tungsten wire brush, alumina polishing cloth, etc. It was manufactured by a process that removes electron-emitting materials. The flowchart is shown in FIG. However, in this flowchart, the inspection step and other steps of the end-of-leaf branch not related to the present invention are omitted. In the figure, tungsten (W) is used as a high melting point metal, BaCO 3 is used as an electron-emitting substance,
Each of CaCO 3 and Al 2 O 3 is employed.
【0003】[0003]
【発明が解決しようとする課題】上記したように、従来
方法ではタングステン、モリブデン等の高融点金属の焼
結体に電子放射性物質を溶融含浸させるのだが、高融点
金属の粒子を焼結すると端部の焼結が一様でなく、含浸
に必要な孔隙が潰れ、電子放射性物質の浸透が悪くな
る。機械加工をするのに必ずしも無酸素銅を含浸しなけ
ればならないわけではなく、仮焼結をして機械加工をし
たり、本焼結後研磨加工をする方法もあるが、 いずれ
も含浸型陰極の製造コストを引き上げる要因となってい
る。As described above, in the conventional method, a sintered body of a refractory metal such as tungsten or molybdenum is melt-impregnated with an electron-emitting substance. The sintering of the part is not uniform, the pores required for impregnation are crushed, and the penetration of the electron-emitting substance is deteriorated. Oxygen-free copper does not necessarily have to be impregnated for machining, but there are also methods of temporary sintering and machining, and polishing after main sintering. This is a factor that raises manufacturing costs.
【0004】しかしながら、このような工程を入れて
も、上記焼結体の空孔率を一定にすることは容易ではな
く、タングステン等高融点金属の粒径の厳密な管理によ
ってもそのばらつきを無くすことは困難である。よって
上記焼結体に含浸した電子放射性物質の濃度分布もばら
つき、電子放射特性に影響がでるという問題があった。However, it is not easy to make the porosity of the sintered body constant even with such a step, and the variation can be eliminated even by strict control of the particle size of the refractory metal such as tungsten. It is difficult. Therefore, there has been a problem that the concentration distribution of the electron-emitting substance impregnated in the sintered body also varies, which affects the electron emission characteristics.
【0005】本発明は上記問題に鑑みてなされたもので
あり、製造工程を簡略化でき、電子放射性物質の濃度分
布が良好な含浸型陰極を提供することを目的とする。The present invention has been made in view of the above problems, and has as its object to provide an impregnated cathode in which the manufacturing process can be simplified and the electron emission material has a good concentration distribution.
【0006】[0006]
【課題を解決するための手段】上記目的を達成するため
本発明は、タングステン粒子に少なくともバリウムを含
む2元系以上の炭酸塩粒子の混合物を被覆あるいは披着
させた粒子を形成後、圧縮成形し、所定形状の圧密体を
形成する工程と、上記圧密体中の少なくともバリウムを
含む2元系以上の炭酸塩を酸化物に分解し、上記酸化物
を溶融し、タングステンを焼結する熱処理工程とを有す
るように構成している。あるいは、タングステン粒子に
少なくともバリウムを含む2元系以上の酸化物粒子の混
合物を被覆あるいは披着させた粒子を形成後、圧縮成形
し、所定形状の圧密体を形成する工程と、上記圧密体中
の少なくともバリウムを含む2元系以上の酸化物を溶融
しタングステンを焼結する熱処理工程とを有するように
構成している。To achieve the above object, according to an aspect of the invention, the mixture coating or披着 of binary or more carbonate particles containing at least barium tungsten particles
After forming the formed particles, compression molding to form a compact having a predetermined shape, and decomposing the binary or more carbonates containing at least barium in the compact into oxides and melting the oxides And a heat treatment step of sintering tungsten. Alternatively, the step of after forming the mixture coated or披着is allowed particles of binary or more oxide particles comprising <br/> least barium tungsten particles were compression molded to form a compacted body having a predetermined shape, A heat treatment step of melting at least binary oxide containing barium in the compact and sintering tungsten.
【0007】[0007]
【作用】高融点金属粒子に電子放射性物質の粒子を被覆
あるいは披着させた粒子を形成後焼結することで、あら
かじめ高融点金属内における電子放射性物質の良好な分
散性を確保でき、高融点金属粒子の焼結状態による電子
放射性物質の陰極内への行き渡り不良や濃度分布のばら
つきを発生させない。また、これら粒子を圧縮成形した
後、熱処理を施して電子放射性物質を融解すると、高融
点金属が従来になく低温で焼結される。本発明者らはこ
れらの事実を知見し、本発明をするに至った。[Function] Coating high-melting metal particles with particles of electron-emitting substance
Alternatively, by forming and sintering the deposited particles , good dispersibility of the electron-emitting substance in the high-melting metal can be secured in advance, and the electron-emitting substance is injected into the cathode by the sintered state of the high-melting metal particles. It does not cause poor distribution or variations in density distribution. These particles were compression molded.
Thereafter, when the electron-emitting material is melted by heat treatment, the high melting point metal is sintered at a lower temperature than ever before. The present inventors have knowledge of these facts and have led to the present invention.
【0008】[0008]
【実施例】以下に本発明の実施例について説明する。ま
ず、平均粒径10μm以下のBaCO3、CaCO3、A
l2O3の粒子を所定のモル比で混合した粒子を、ポリビ
ニールアルコール(PVA)等のバインダーと混合し、
それら混合物を平均粒径1〜20μmのタングステン
(W)粒子に粉体表面改質装置等で被覆あるいは披着さ
せた粒子を形成後、1.0〜4.0t/cm2の圧力で
機械プレスや静水圧プレス等の圧縮成形機で圧縮・成形
し、所定形状の圧密体を作成する。この際、後に行なう
焼結の完了時において、最終形状の陰極を得るため、実
験等により焼結による収縮率や変形の度合いを把握し、
上記圧縮成形機の型形状を決定しておくことが肝要であ
る。Embodiments of the present invention will be described below. First, the average particle size of 10 [mu] m or less of BaCO 3, CaCO 3, A
The particles mixed with particles of l 2 O 3 at a predetermined molar ratio, polyvinyl
Mix with a binder such as Neil alcohol (PVA)
Tungsten having an average particle size of 1 to 20 μm
(W) Particles are coated or covered with a powder surface modification device, etc.
After the formed particles are formed, they are compressed and molded with a compression molding machine such as a mechanical press or a hydrostatic press at a pressure of 1.0 to 4.0 t / cm 2 to produce a compact having a predetermined shape. At this time, at the time of completion of sintering performed later, in order to obtain a cathode having a final shape, the degree of shrinkage or deformation due to sintering is grasped by experiments,
It is important to determine the shape of the compression molding machine.
【0009】次に上記圧密体を水素炉に入れ1000〜
1300℃に設定し、炭酸塩(BaCO3、CaCO3)
を完全に酸化物(BaO、CaO)に分解するまで加熱
する。続いて水素炉を1600〜1800℃に設定し、
酸化物(BaO、CaO)及びAl2O3を溶融する。こ
の状態を保持することでタングステンは焼結され、多孔
質タングステンとなり、その後冷却して多孔質タングス
テンに付着した余剰の電子放射正物質(BaO、Ca
O、Al2O3等)をタングステンワイヤブラシ、アルミ
ナ研磨布等により研磨・除去することによって、結果的
には多孔質タングステン中に電子放射性物質が含浸した
形の含浸型陰極を得ることができる。Next, the compact is placed in a hydrogen furnace,
Set to 1300 ° C, carbonate (BaCO 3 , CaCO 3 )
Is heated until it is completely decomposed into oxides (BaO, CaO). Subsequently, the hydrogen furnace was set at 1600 to 1800 ° C,
Oxide (BaO, CaO) and Al 2 O 3 are melted. By maintaining this state, the tungsten is sintered to become porous tungsten, and then cooled and excessive electron emission positive substances (BaO, Ca) adhered to the porous tungsten.
O, Al 2 O 3 ) is polished and removed with a tungsten wire brush, an alumina polishing cloth, or the like, and as a result, an impregnated cathode in which porous tungsten is impregnated with an electron-emitting substance can be obtained. .
【0010】従来、タングステン単体の焼結には220
0〜2400℃の加熱が必要であったが、本発明によっ
ては1700〜2000℃で済み、それゆえ従来別工程
としていた焼結と含浸を本発明により実質的に同時に行
なっても電子放射性物質の蒸発による逸散は避けること
ができる。以上に説明した実施例における一連の工程の
フローチャートを図1に示す。なお、図1においても図
2と同様に枝葉末節の工程は省略している。本図と従来
例を示す図2とを比較すると、本発明により従来工程が
著しく省かれていることが理解できる。Conventionally, 220 is used for sintering tungsten alone.
Although heating at 0 to 2400 ° C. was required, the present invention required heating at 1700 to 2000 ° C., and therefore, even if sintering and impregnation, which were conventionally performed in separate steps, were performed substantially simultaneously according to the present invention, the emissivity of the electron-emitting material could be reduced. Dissipation by evaporation can be avoided. FIG. 1 shows a flowchart of a series of steps in the embodiment described above. Note that, also in FIG. 1, the step of the branch and leaf end node is omitted as in FIG. 2. By comparing this figure with FIG. 2 showing a conventional example, it can be understood that the conventional process is remarkably omitted according to the present invention.
【0011】以上説明した実施例においては、電子放射
性物質として、炭酸塩であるBaCO 3 、及びCaC
O 3 、そしてAl 2 O 3 を使用したが、酸化物であるBa
O、CaOとAl 2 O 3 を用いても良いことは明らかであ
る。この際、炭酸塩を酸化物に分解する過程は無くな
る。なお、上記実施例においてBaを含む炭酸塩もしく
は酸化物さえ含まれていれば、Caの炭酸塩もしくは酸
化物やAl 2 O 3 は含まれておらずとも陰極を形成するこ
とができる。 In the embodiment described above, the electron emission
BaCO 3 , which is a carbonate , and CaC
O 3 and Al 2 O 3 were used, but the oxide Ba
Obviously , O, CaO and Al 2 O 3 may be used.
You. At this time, there is no process of decomposing the carbonate into oxide.
You. In the above embodiment, the carbonate containing Ba or
Is a carbonate or acid of Ca as long as it contains oxides
Compound, Al 2 O 3, or the not included a cathode even not formed child
Can be.
【0012】[0012]
【発明の効果】以上説明したように、本発明によれば、
著しく工程を簡略化でき、なおかつ電子放射性物質の分
散性の良い含浸型陰極が製造できる。また、そのため、
電子放射特性が向上した安価な含浸型陰極を提供するこ
とができる。 As described above, according to the present invention,
The process can be significantly simplified, and the amount of electron-emitting substances can be reduced.
An impregnated cathode having good dispersibility can be manufactured. Also,
To provide an inexpensive impregnated cathode with improved electron emission characteristics
Can be.
【図面の簡単な説明】[Brief description of the drawings]
【図1】本発明の一実施例における一連の工程の概略を
示すフローチャートである。FIG. 1 is a flowchart showing an outline of a series of steps in one embodiment of the present invention.
【図2】従来例における一連の工程の概略を示すフロー
チャートである。FIG. 2 is a flowchart showing an outline of a series of steps in a conventional example.
Claims (2)
を含む2元系以上の炭酸塩粒子の混合物を被覆あるいは
披着させた粒子を形成後、圧縮成形し、所定形状の圧密
体を形成する工程と、上記圧密体中の少なくともバリウ
ムを含む2元系以上の炭酸塩を酸化物に分解し、上記酸
化物を溶融し、タングステンを焼結する熱処理工程とを
有することを特徴とする含浸型陰極の製造方法。1. A coating of a mixture of binary or more carbonate particles containing at least barium tungsten particles or
After forming the deposited particles, compression molding to form a compact having a predetermined shape, and decomposing a binary or more carbonate containing at least barium in the compact into an oxide, And a heat treatment step of sintering tungsten.
を含む2元系以上の酸化物粒子の混合物を被覆あるいは
披着させた粒子を形成後、圧縮成形し、所定形状の圧密
体を形成する工程と、上記圧密体中の少なくともバリウ
ムを含む2元系以上の酸化物を溶融し、タングステンを
焼結する熱処理工程とを有することを特徴とする含浸型
陰極の製造方法。2. A coating of a mixture of binary or more oxide particles containing at least barium tungsten particles or
After forming the披着is allowed particles, compression molding, melt forming a compacted body having a predetermined shape, the upper Symbol binary or more oxide containing at least barium compacted body during the sintering tungsten A method for producing an impregnated cathode, comprising a heat treatment step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09384493A JP3205638B2 (en) | 1993-03-30 | 1993-03-30 | Manufacturing method of impregnated cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09384493A JP3205638B2 (en) | 1993-03-30 | 1993-03-30 | Manufacturing method of impregnated cathode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06290706A JPH06290706A (en) | 1994-10-18 |
| JP3205638B2 true JP3205638B2 (en) | 2001-09-04 |
Family
ID=14093717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09384493A Expired - Lifetime JP3205638B2 (en) | 1993-03-30 | 1993-03-30 | Manufacturing method of impregnated cathode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3205638B2 (en) |
-
1993
- 1993-03-30 JP JP09384493A patent/JP3205638B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06290706A (en) | 1994-10-18 |
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