JP3207015B2 - Manufacturing method of ceramic wiring board - Google Patents
Manufacturing method of ceramic wiring boardInfo
- Publication number
- JP3207015B2 JP3207015B2 JP11678093A JP11678093A JP3207015B2 JP 3207015 B2 JP3207015 B2 JP 3207015B2 JP 11678093 A JP11678093 A JP 11678093A JP 11678093 A JP11678093 A JP 11678093A JP 3207015 B2 JP3207015 B2 JP 3207015B2
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- ceramic sintered
- wiring conductor
- internal wiring
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は混成集積回路装置や半導
体素子収納用パッケージ等に用いられるセラミック配線
基板に製造方法の改良に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a method for manufacturing a ceramic wiring board used for a hybrid integrated circuit device, a package for housing a semiconductor element, and the like.
【0002】[0002]
【従来の技術】従来、混成集積回路装置や半導体素子収
納用パッケージ等に用いられるセラミック配線基板とし
てアルミナセラミックス等の電気絶縁材料から成り、そ
の内部から表面にかけて導出するタングステン、モリブ
デン等の高融点金属粉末から成る内部配線導体を有する
セラミック焼結体の表面に前記内部配線導体と接続する
表面配線導体を薄膜技術によって形成したものが知られ
ている。2. Description of the Related Art Conventionally, a ceramic wiring board used for a hybrid integrated circuit device or a package for housing a semiconductor element is made of an electrically insulating material such as alumina ceramics, and a high melting point metal such as tungsten or molybdenum is drawn out from the inside to the surface. It is known that a surface wiring conductor connected to the internal wiring conductor is formed by a thin film technique on a surface of a ceramic sintered body having an internal wiring conductor made of powder.
【0003】またこのセラミック配線基板は、セラミッ
ク焼結体の表面に表面配線導体を薄膜技術により寸法精
度良く形成するため通常、内部配線導体を有するセラミ
ック焼結体の表面をラッピングマシーンや平面研削盤等
の機械的研磨法を採用することによって平坦に研磨加工
している。In order to form surface wiring conductors on the surface of the ceramic sintered body with good dimensional accuracy by a thin film technique, the surface of the ceramic sintered body having internal wiring conductors is usually wrapped by a lapping machine or a surface grinder. The surface is polished flat by employing a mechanical polishing method such as that described above.
【0004】しかしながら、この従来のセラミック配線
基板ではそのセラミック焼結体を構成するアルミナセラ
ミックスの比誘電率が9〜10と高いため内部配線導体
及び表面配線導体を伝わる信号の伝搬遅延時間が大き
く、その結果、高速作動の混成集積回路装置や高速作動
の半導体素子を収容する半導体素子収納用パッケージに
用いられるセラミック配線基板としては使用不可である
という欠点を有していた。However, in this conventional ceramic wiring board, since the relative dielectric constant of alumina ceramics constituting the ceramic sintered body is as high as 9 to 10, the propagation delay time of a signal transmitted through the internal wiring conductor and the surface wiring conductor is large. As a result, it has a drawback that it cannot be used as a ceramic wiring board used for a high-speed operation hybrid integrated circuit device or a semiconductor element housing package for housing a high-speed operation semiconductor element.
【0005】更に、前記セラミック配線基板はそのセラ
ミック焼結体を構成するアルミナセラミックスの焼成温
度が約1600℃と高いことから、内部配線導体を構成
する金属が高融点金属であるタングステンやモリブデン
等に限定され、該タングステン、モリブデン等の電気抵
抗が高抵抗であることから特に高速信号では内部配線導
体を伝搬する信号の減衰が大きいものとなり、高速作動
の混成回路装置や高速作動の半導体素子を収容する半導
体素子収納用パッケージに使用するセラミック配線基板
としては使用不可であるという欠点を有していた。Further, since the ceramic wiring board has a high firing temperature of about 1600 ° C. for the alumina ceramic constituting the ceramic sintered body, the metal constituting the internal wiring conductor is made of tungsten or molybdenum which is a high melting point metal. Since the electrical resistance of the tungsten, molybdenum, etc. is high, the attenuation of the signal propagating through the internal wiring conductor is large especially in high-speed signals, and accommodates a high-speed operation hybrid circuit device and a high-speed operation semiconductor element. It cannot be used as a ceramic wiring board used for a package for accommodating a semiconductor element.
【0006】そこで、セラミック焼結体を比誘電率が約
5.0以下と低く、且つ焼成温度が約1000℃前後と
低いガラス−セラミックスで形成し、内部配線導体を低
抵抗材料である銅や銀、金等で形成したセラミック配線
基板が提案されている。Therefore, the ceramic sintered body is formed of glass-ceramic having a low relative dielectric constant of about 5.0 or less and a firing temperature of about 1000 ° C., and the internal wiring conductor is made of copper or copper which is a low-resistance material. A ceramic wiring substrate formed of silver, gold, or the like has been proposed.
【0007】[0007]
【発明が解決しようとする課題】しかしながら、セラミ
ック焼結体の内部配線導体を銅や銀、金等で形成した場
合、該銅や銀、金等からなる内部配線導体はその硬度が
セラミック焼結体と比較して著しく低いことから、内部
配線導体を有するセラミック焼結体の表面を機械的研磨
法により平坦に研磨加工する際、内部配線導体が優先的
に研磨除去され、内部配線導体の露出面がセラミック焼
結体の表面より窪んだ形状となってしまう。However, when the internal wiring conductor of the ceramic sintered body is formed of copper, silver, gold, or the like, the hardness of the internal wiring conductor made of copper, silver, gold, or the like is lower than that of the ceramic sintered body. When the surface of the ceramic sintered body having the internal wiring conductor is flatly polished by a mechanical polishing method, the internal wiring conductor is preferentially polished and removed, so that the internal wiring conductor is exposed. The surface has a shape depressed from the surface of the ceramic sintered body.
【0008】このように内部配線導体の露出面がセラミ
ック焼結体の表面より窪んだ形状となると、該内部配線
導体とこれに接続される表面配線導体との間に隙間が発
生し易く、内部配線導体と表面配線導体との間の電気的
接続を確実に行うことができないという欠点が誘発され
る。[0008] When the exposed surface of the internal wiring conductor is depressed from the surface of the ceramic sintered body in this way, a gap is easily generated between the internal wiring conductor and the surface wiring conductor connected to the internal wiring conductor. The disadvantage is that the electrical connection between the wiring conductor and the surface wiring conductor cannot be made reliably.
【0009】[0009]
【発明の目的】本発明はかかる従来の欠点に鑑み案出さ
れたものであり、その目的は内部配線導体と表面配線導
体の電気的接続を確実なものとなすことができるセラミ
ック配線基板の製造方法を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to manufacture a ceramic wiring board capable of ensuring an electrical connection between an internal wiring conductor and a surface wiring conductor. It is to provide a method.
【0010】[0010]
【課題を解決するための手段】本発明は、銅、銀、金及
びこれらを主成分とする金属のうち少なくとも1種から
成る内部配線導体を内部から表面にかけて有するセラミ
ック焼結体を準備する工程と、前記セラミック焼結体の
表面を機械的研磨法により平坦に研磨加工する工程と、
前記研磨加工されたセラミック焼結体の表面より窪んだ
形状に研磨除去された内部配線導体の露出面にメッキ金
属層を該メッキ金属層がセラミック焼結体表面から突出
する厚みに被着させる工程と、前記セラミック焼結体表
面から突出させたメッキ金属層を機械的研磨法によりセ
ラミック焼結体表面と同じ高さまで研磨除去する工程
と、前記研磨除去されてセラミック焼結体表面に付着し
たメッキ金属層の一部を化学的研磨除去する工程と、前
記セラミック焼結体の表面に前記セラミック金属層と接
続する表面配線導体を薄膜技術により形成する工程とか
ら成ることを特徴とするものである。The present invention SUMMARY OF THE INVENTION The preparation of copper, silver, gold and a ceramic sintered body having over from the inside to the surface of the internal wiring conductors consisting of at least one of metal mainly composed of these And a step of polishing the surface of the ceramic sintered body flat by a mechanical polishing method,
A step of applying a plating metal layer to the exposed surface of the internal wiring conductor polished and removed to a shape depressed from the surface of the polished ceramic sintered body so that the plating metal layer protrudes from the surface of the ceramic sintered body. And polishing and removing the plated metal layer protruding from the surface of the ceramic sintered body to the same height as the surface of the ceramic sintered body by a mechanical polishing method. A step of chemically polishing and removing a part of the metal layer, and a step of forming a surface wiring conductor connected to the ceramic metal layer on the surface of the ceramic sintered body by a thin film technique. .
【0011】[0011]
【作用】本発明によれば、機械的研磨加工により形成さ
れる内部配線導体の露出面の窪みをメッキ金属層で埋め
るとともに該メッキ金属層をセラミック焼結体の表面と
同じ高さに研磨することから内部配線導体と表面配線導
体との間に隙間が形成されることは一切なく、その結
果、内部配線導体と表面配線導体とを確実に電気的接続
することが可能となる。According to the present invention, the recesses on the exposed surface of the internal wiring conductor formed by mechanical polishing are filled with a plated metal layer and the plated metal layer is polished to the same height as the surface of the ceramic sintered body. Therefore, no gap is formed between the internal wiring conductor and the surface wiring conductor, and as a result, the internal wiring conductor and the surface wiring conductor can be reliably electrically connected.
【0012】[0012]
【実施例】次に本発明を添付図面に基づき詳細に説明す
る。BRIEF DESCRIPTION OF THE DRAWINGS FIG.
【0013】図1(a)乃至(e)は本発明の製造方法
の一実施例を示す各工程毎の断面図であり、1はセラミ
ック焼結体、2は内部配線導体、3は表面配線導体であ
る。1 (a) to 1 (e) are cross-sectional views of each step showing one embodiment of the manufacturing method of the present invention, wherein 1 is a ceramic sintered body, 2 is an internal wiring conductor, and 3 is a surface wiring. Conductor.
【0014】先ず、図1(a)に示すように内部導体配
線2を有するセラミック焼結体1を準備する。First, as shown in FIG. 1A, a ceramic sintered body 1 having an internal conductor wiring 2 is prepared.
【0015】前記セラミック焼結体1はガラス−セラミ
ックスから成り、例えばシリカ(SiO2 )72〜76
重量%、酸化ホウ素(B2 O3 )15〜17重量%、ア
ルミナ(Al2 O3 )2〜4重量%、マグネシア(Mg
O)1.5重量%以下、ジルコニア(ZrO2 )1.1
〜1.4重量%、酸化ナトリウム(Na2 O)、酸化カ
リウム(K2 O)、酸化リチウム(Li2 O)の合計が
2.0〜3.0から成るホウ珪ガラス酸ガラス粉末41
〜62重量%に、アルミナ(Al2 O3 )粉末19〜2
1重量%、石英(SiO2 )粉末11〜12重量%、コ
ージエライト(2MgO・2Al2 O3 ・5SiO2 )
粉末18〜23重量%を調合し、これに適当なバインダ
ー、溶媒を添加混合して泥漿状となすとともにドクター
ブレード法を採用することによってセラミックグリーン
シートを形成し、しかる後、前記セラミックグリーンシ
ートに適当な打ち抜き加工を施し所定形状となすととも
に複数枚積層し、約1000℃の温度で焼成することに
よって製作される。The ceramic sintered body 1 is made of glass-ceramics, for example, silica (SiO 2) 72 to 76.
%, Boron oxide (B2 O3) 15-17% by weight, alumina (Al2 O3) 2-4% by weight, magnesia (Mg
O) 1.5% by weight or less, zirconia (ZrO2) 1.1
Borosilicate glass powder 41 comprising sodium oxide (Na2 O), potassium oxide (K2 O) and lithium oxide (Li2 O) in a total of 2.0 to 3.0% by weight.
Alumina (Al2 O3) powder 19-2
1% by weight, 11 to 12% by weight of quartz (SiO2) powder, cordierite (2MgO.2Al2O3.5SiO2)
A powder of 18 to 23% by weight is prepared, a suitable binder and a solvent are added and mixed to form a slurry, and a ceramic green sheet is formed by employing a doctor blade method. It is manufactured by performing appropriate punching, forming a predetermined shape, laminating a plurality of pieces, and firing at a temperature of about 1000 ° C.
【0016】尚、前記セラミック焼結体1は焼成時の収
縮の不均一に伴い上下に10乃至100μm程度反った
ものとなっている。The ceramic sintered body 1 is warped up and down by about 10 to 100 μm due to uneven shrinkage during firing.
【0017】また前記セラミック焼結体1にはその下面
に複数の凹部A及び該凹部A底面からセラミック焼結体
1上面に貫通するスルーホールBが形成されており、該
凹部A及びスルーホールB内には内部配線導体2が充填
されている。On the lower surface of the ceramic sintered body 1, there are formed a plurality of concave portions A and a through hole B penetrating from the bottom surface of the concave portion A to the upper surface of the ceramic sintered body 1. The inside is filled with an internal wiring conductor 2.
【0018】前記複数の凹部A及びスルーホールBはセ
ラミック焼結体1となるセラミックグリーンシートに打
ち抜き加工を施す際、該セラミックグリーンシートに凹
部A及びスルーホールBとなる貫通孔を適当な大きさに
穿孔しておくことによってセラミック焼結体1の所定位
置に形成され、また凹部A及びスルーホールBに充填さ
れた内部配線導体2は銅、銀、金、もしくはこれらを主
成分とする金属等の低抵抗を有する金属から成り、例え
ば銅から成る場合、銅の粉末に適当なバインダー、溶媒
を添加混合して得た金属ペーストをセラミック焼結体1
となるセラミックグリーンシートに穿孔しておいた凹部
A及びスルーホールBとなる貫通孔に予め充填させてお
くことによりセラミック焼結体1の上面から下面にかけ
て形成される。When a plurality of recesses A and through holes B are punched into a ceramic green sheet to be a ceramic sintered body 1, through holes to be recesses A and through holes B in the ceramic green sheet are appropriately sized. The internal wiring conductor 2 formed at a predetermined position of the ceramic sintered body 1 and filled in the recess A and the through hole B is made of copper, silver, gold, or a metal containing these as main components. In the case of copper, for example, copper, a metal paste obtained by adding and mixing an appropriate binder and a solvent to copper powder is used as a ceramic sintered body 1.
The ceramic green body 1 is formed from the upper surface to the lower surface of the ceramic sintered body 1 by previously filling the recesses A and the through holes B formed in the ceramic green sheet.
【0019】更に前記セラミック焼結体1の凹部Aに充
填された内部配線導体2は後述する外部リード端子5が
取着される広面積のリード取着パッドとなっており、該
リード取着パッドには外部リード端子5がロウ付けされ
る。Further, the internal wiring conductor 2 filling the recess A of the ceramic sintered body 1 is a wide area lead attachment pad to which an external lead terminal 5 described later is attached. The external lead terminal 5 is brazed to the terminal.
【0020】尚、前記セラミック焼結体1の凹部Aはセ
ラミック焼結体1下面側から奥に向かってその大きさが
広がるように形成しておくとリード取着パッドのセラミ
ック焼結体1への被着強度が大きいものとなる。従っ
て、前記セラミック焼結体1の凹部Aはリード取付パッ
ドのセラミック焼結体1への被着強度を大きなものとす
るためにはセラミック焼結体1下面側から奥に向かって
その大きさが広がるように形成しておくことが好まし
い。If the recess A of the ceramic sintered body 1 is formed so as to increase in size from the lower surface side of the ceramic sintered body 1 to the back, the concave portion A is formed in the ceramic sintered body 1 of the lead attachment pad. Has a high adhesion strength. Therefore, the concave portion A of the ceramic sintered body 1 has a size that increases from the lower surface side of the ceramic sintered body 1 to the back in order to increase the adhesion strength of the lead mounting pad to the ceramic sintered body 1. It is preferable that it is formed so as to spread.
【0021】次に前記セラミック焼結体の上下両面を機
械的に研磨加工し、図1(b)に示す如くセラミック焼
結体1の上下両面を平坦なものとなす。Next, the upper and lower surfaces of the ceramic sintered body are mechanically polished so that the upper and lower surfaces of the ceramic sintered body 1 are flat as shown in FIG.
【0022】前記機械的研磨加工としては、例えばラッ
ピングマシーンや平面研削盤等によって行われ、セラミ
ック焼結体1の表面が10乃至100μm程度反ってい
るのを反りが5μm以下の平坦なものに加工する。The mechanical polishing is performed by, for example, a lapping machine or a surface grinder. The surface of the ceramic sintered body 1 is warped by about 10 to 100 μm to a flat one having a warpage of 5 μm or less. I do.
【0023】尚、前記セラミック焼結体1の上下両面を
機械的研磨加工した場合、内部配線導体2を構成する銅
がセラミック焼結体1を構成するガラスセラミックスと
比較して著しく柔らかいため、内部配線導体2がセラミ
ック焼結体1より優先的に研磨除去され、その結果、内
部配線導体2の上下露出面はセラミック焼結体1の上下
面より窪んだ形状となってしまう。When the upper and lower surfaces of the ceramic sintered body 1 are mechanically polished, the copper constituting the internal wiring conductor 2 is significantly softer than the glass ceramic constituting the ceramic sintered body 1. The wiring conductor 2 is polished and removed more preferentially than the ceramic sintered body 1. As a result, the upper and lower exposed surfaces of the internal wiring conductor 2 are depressed from the upper and lower surfaces of the ceramic sintered body 1.
【0024】次に図1(c)に示すように前記セラミッ
ク焼結体1の内部配線導体2の上下両露出面に従来周知
の電解メッキ法、無電解メッキ法を採用して銅から成る
メッキ金属層4をその表面がセラミック焼結体1の上下
面より突出する厚みに被着させる。Next, as shown in FIG. 1 (c), the upper and lower exposed surfaces of the internal wiring conductor 2 of the ceramic sintered body 1 are plated with copper by using a conventionally known electrolytic plating method or electroless plating method. The metal layer 4 is applied to a thickness such that its surface protrudes from the upper and lower surfaces of the ceramic sintered body 1.
【0025】前記内部配線導体2の上下両露出面へのメ
ッキ金属層4の被着は例えば、内部配線導体2を有する
セラミック焼結体1を硫酸銅:7グラム/ リットル、ロッ
シエル塩:75 グラム/ リットル、トリエタノールアミ
ン:10 ミリリットル/ リットル、ホルマリン:25 ミリリ
ットル/ リットル、水酸化ナトリウム:20 グラム/ リッ
トル、炭酸ナトリウム:10 グラム/ リットルから成る液
温50〜55℃の無電解銅めっき浴中に浸漬し、内部配線導
体2の露出面に銅を析出させることによって行われる。The plating metal layer 4 is applied to both upper and lower exposed surfaces of the internal wiring conductor 2 by, for example, sintering the ceramic sintered body 1 having the internal wiring conductor 2 with copper sulfate: 7 g / liter and Rossier salt: 75 g. / Liter, triethanolamine: 10 ml / liter, formalin: 25 ml / liter, sodium hydroxide: 20 g / liter, sodium carbonate: 10 g / liter, in an electroless copper plating bath at a liquid temperature of 50 to 55 ° C. And depositing copper on the exposed surface of the internal wiring conductor 2.
【0026】そして次に図1(d)に示す如く前記セラ
ミック焼結体1の上下両面から突出したメッキ金属層4
をラッピングマシーン等の機械的研磨加工により研磨除
去し、その表面をセラミック焼結体1の上下面と同じ高
さにする。この場合、研磨除去されたメッキ金属層4の
一部が研磨の摩擦によりセラミック焼結体1の上下面に
擦れて付着する場合があるので、前記セラミック焼結体
1の表面から突出したメッキ金属層を機械的研磨加工に
より除去した後、例えば塩酸等のエッチング液によりセ
ラミック焼結体1上下面に付着したメッキ金属層を化学
的研磨除去することが好ましい。Next, as shown in FIG. 1 (d), the plated metal layer 4 protruding from the upper and lower surfaces of the ceramic sintered body 1 is formed.
Is polished and removed by mechanical polishing such as a lapping machine, and the surface thereof is made the same height as the upper and lower surfaces of the ceramic sintered body 1. In this case, a portion of the polished and removed plating metal layer 4 may be rubbed and adhered to the upper and lower surfaces of the ceramic sintered body 1 due to polishing friction. After removing the layer by mechanical polishing, it is preferable to chemically remove the plated metal layer adhered to the upper and lower surfaces of the ceramic sintered body 1 with an etching solution such as hydrochloric acid.
【0027】次に前記セラミック焼結体1は図1(e)
に示すように、その上面に前記内部配線導体2と接続さ
れる表面配線導体3がスパッタリング等の薄膜形成技術
を採用することによって被着形成されるとともにその下
面に外部リード端子5が金−錫合金、金−シリコン合
金、金−ゲルマニウム合金等の低融点ロウ材を介して接
合され、これによって最終製品としてのセラミック配線
基板となる。この場合、内部配線導体2の上下両面に、
表面がセラミック焼結体1の上下面と同じ高さであるメ
ッキ金属層4が被着され、内部配線導体2の上下両面に
形成される窪みが埋められていることから内部配線導体
2と表面配線導体3との間に隙間が形成されることは一
切なく、その結果、内部配線導体2と表面配線導体3と
の電気的接続が確実なものとなる。Next, the ceramic sintered body 1 is shown in FIG.
As shown in FIG. 5, a surface wiring conductor 3 connected to the internal wiring conductor 2 is formed on the upper surface thereof by applying a thin film forming technique such as sputtering, and an external lead terminal 5 is provided on its lower surface with gold-tin. It is joined via a low melting point brazing material such as an alloy, a gold-silicon alloy, or a gold-germanium alloy, thereby forming a ceramic wiring board as a final product. In this case, on both upper and lower surfaces of the internal wiring conductor 2,
A plating metal layer 4 whose surface is the same height as the upper and lower surfaces of the ceramic sintered body 1 is applied, and the depressions formed on both upper and lower surfaces of the internal wiring conductor 2 are filled. No gap is formed between the wiring conductor 3 and the wiring conductor 3, and as a result, electrical connection between the internal wiring conductor 2 and the surface wiring conductor 3 is ensured.
【0028】前記セラミック焼結体1の上面に被着形成
される表面配線層3は例えばクロムから成る密着層6と
銅から成る主導体層7の2層構造をしており、セラミッ
ク焼結体1の上面に蒸着法やスパッタリング法等の薄膜
形成技術により密着層6としてのクロムと主導体層7と
しての銅を所定厚みに層着させるとともに該密着層6及
び主導体層7の各層をフォトリソグラフィー技術を採用
し所定パターンに食刻することによってセラミック焼結
体1の上面に内部配線導体2と接続するようにして所定
パターンに被着形成される。The surface wiring layer 3 formed on the upper surface of the ceramic sintered body 1 has a two-layer structure of, for example, an adhesion layer 6 made of chromium and a main conductor layer 7 made of copper. Chromium as the adhesion layer 6 and copper as the main conductor layer 7 are deposited to a predetermined thickness on the upper surface of the substrate 1 by a thin film forming technique such as a vapor deposition method or a sputtering method, and each layer of the adhesion layer 6 and the main conductor layer 7 is photo-coated. A predetermined pattern is etched using lithography technology, and is adhered to the predetermined pattern so as to be connected to the internal wiring conductor 2 on the upper surface of the ceramic sintered body 1.
【0029】尚、本発明は上述の実施例に限定されるも
のではなく、本発明の要旨を逸脱しない範囲で有れば種
々の変更は可能であり、例えば上述の実施例では内部配
線導体2の露出面に被着させるメッキ金属層4として銅
を用いたが、該メッキ金属層4にニッケルや金等、他の
金属を用いても良い。It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. Although copper was used as the plating metal layer 4 to be adhered to the exposed surface of the above, another metal such as nickel or gold may be used for the plating metal layer 4.
【0030】また上述の実施例では外部リード端子5を
取着するリード取着パッドはセラミック焼結体1の下面
に設けた凹部Aに充填させた内部配線導体2で形成した
が、図2に示す如く内部配線導体2をセラミック焼結体
1の下面にスルーホールBを介して導出させるとともに
セラミック焼結体1下面の内部配線導体2が導出する部
位に薄膜技術により広面積のリード取着パッドCを形成
しても良い。In the above-described embodiment, the lead attachment pad for attaching the external lead terminal 5 is formed by the internal wiring conductor 2 filled in the recess A provided on the lower surface of the ceramic sintered body 1. As shown, the internal wiring conductor 2 is led out to the lower surface of the ceramic sintered body 1 through the through hole B, and a wide area lead attachment pad is formed on the lower surface of the ceramic sintered body 1 by the thin film technique at the site where the internal wiring conductor 2 is led out. C may be formed.
【0031】[0031]
【発明の効果】本発明のセラミック配線基板の製造方法
によれば、内部配線導体を有するセラミック焼結体の表
面を機械的研磨加工した後、内部配線導体の露出面にメ
ッキ金属層をセラミック焼結体の表面から突出する厚み
に被着させるとともに該メッキ金属層をセラミック焼結
体の表面と同じ高さに研磨したことから、内部配線導体
の露出面に形成される窪みがメッキ金属層によって完全
に埋まり、その結果、内部配線導体と表面配線導体との
間に隙間が形成されるのを皆無として内部配線導体と表
面配線導体とを確実に電気的接続することが可能とな
る。According to the method for manufacturing a ceramic wiring board of the present invention, after the surface of a ceramic sintered body having an internal wiring conductor is mechanically polished, a plated metal layer is formed on the exposed surface of the internal wiring conductor by ceramic firing. Since the plating metal layer is applied to a thickness protruding from the surface of the sintered body and the plated metal layer is polished to the same height as the surface of the ceramic sintered body, the depression formed on the exposed surface of the internal wiring conductor is formed by the plated metal layer. As a result, the internal wiring conductor and the surface wiring conductor can be reliably electrically connected without forming any gap between the internal wiring conductor and the surface wiring conductor.
【図1】(a)乃至(e)は本発明のセラミック配線基
板の製造方法を説明するための各工程毎の断面図であ
る。FIGS. 1 (a) to 1 (e) are cross-sectional views for respective steps for explaining a method for manufacturing a ceramic wiring board of the present invention.
【図2】本発明のセラミック配線基板の製造方法で製作
したセラミック配線基板の他の実施例を示す断面図であ
る。FIG. 2 is a cross-sectional view showing another embodiment of the ceramic wiring board manufactured by the method for manufacturing a ceramic wiring board of the present invention.
1・・・セラミック焼結体 2・・・内部配線導体 3・・・表面配線導体 4・・・メッキ金属層 DESCRIPTION OF SYMBOLS 1 ... Ceramic sintered body 2 ... Internal wiring conductor 3 ... Surface wiring conductor 4 ... Plating metal layer
フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H05K 3/24 H05K 3/22 H05K 3/40 H05K 3/46 H05K 1/11 Continuation of the front page (58) Field surveyed (Int. Cl. 7 , DB name) H05K 3/24 H05K 3/22 H05K 3/40 H05K 3/46 H05K 1/11
Claims (1)
属のうち少なくとも1種から成る内部配線導体を内部か
ら表面にかけて有するセラミック焼結体を準備する工程
と、前記セラミック焼結体の表面を機械的研磨法により
平坦に研磨加工する工程と、前記研磨加工されたセラミ
ック焼結体の表面より窪んだ形状に研磨除去された内部
配線導体の露出面にメッキ金属層を該メッキ金属層がセ
ラミック焼結体表面から突出する厚みに被着させる工程
と、前記セラミック焼結体表面から突出させたメッキ金
属層を機械的研磨法によりセラミック焼結体表面と同じ
高さまで研磨除去する工程と、前記研磨除去されてセラ
ミック焼結体表面に付着したメッキ金属層の一部を化学
的研磨除去する工程と、前記セラミック焼結体の表面に
前記セラミック金属層と接続する表面配線導体を薄膜技
術により形成する工程とから成ることを特徴とするセラ
ミック配線基板の製造方法。1. A copper, silver, a step of preparing a ceramic sintered body having subjected to the surface gold and internal wiring conductor made of at least one of metal mainly composed of them from the inside, the ceramic sintered Polishing the surface of the body flat by a mechanical polishing method, and plating a plated metal layer on an exposed surface of the internal wiring conductor that has been polished and removed to a shape depressed from the surface of the polished ceramic sintered body. A step of applying a metal layer to a thickness protruding from the surface of the ceramic sintered body, and polishing and removing the plated metal layer protruding from the surface of the ceramic sintered body to the same height as the surface of the ceramic sintered body by a mechanical polishing method. A step of chemically polishing and removing a part of the plated metal layer adhered to the surface of the ceramic sintered body which has been polished and removed; and Forming a surface wiring conductor connected to the layer by thin film technology.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11678093A JP3207015B2 (en) | 1993-05-19 | 1993-05-19 | Manufacturing method of ceramic wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11678093A JP3207015B2 (en) | 1993-05-19 | 1993-05-19 | Manufacturing method of ceramic wiring board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06334344A JPH06334344A (en) | 1994-12-02 |
| JP3207015B2 true JP3207015B2 (en) | 2001-09-10 |
Family
ID=14695535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11678093A Expired - Fee Related JP3207015B2 (en) | 1993-05-19 | 1993-05-19 | Manufacturing method of ceramic wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3207015B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002319759A (en) * | 2001-04-20 | 2002-10-31 | Shindo Denshi Kogyo Kk | Manufacturing method of flexible printed circuit board |
-
1993
- 1993-05-19 JP JP11678093A patent/JP3207015B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06334344A (en) | 1994-12-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4030285B2 (en) | Substrate and manufacturing method thereof | |
| JP2002198660A (en) | Circuit board and method of manufacturing the same | |
| JP3207015B2 (en) | Manufacturing method of ceramic wiring board | |
| JPH0727995B2 (en) | Ceramic wiring board | |
| JP4422453B2 (en) | Wiring board | |
| JP3716088B2 (en) | Wiring board | |
| JP2738601B2 (en) | Manufacturing method of ceramic wiring board | |
| JP2002134885A (en) | Circuit board and method of manufacturing the same, electronic device package, green sheet | |
| JP4557382B2 (en) | Wiring board and manufacturing method thereof | |
| JP2690631B2 (en) | Manufacturing method of ceramic wiring board | |
| JP3554195B2 (en) | Wiring board | |
| JP3426920B2 (en) | Wiring board | |
| JP2002252444A (en) | Multi-cavity wiring board | |
| JPH0464254A (en) | Ceramic wiring board and manufacture thereof | |
| JP2000264719A (en) | Porcelain composition, porcelain, and wiring board using the same | |
| JP3645744B2 (en) | Ceramic wiring board | |
| JP2614778B2 (en) | Manufacturing method of ceramic multilayer circuit board | |
| JP3311952B2 (en) | Wiring board | |
| JP2002198460A (en) | Multi-cavity wiring board | |
| JPH0794839A (en) | Circuit board | |
| JP2003124376A (en) | Package for storing semiconductor elements | |
| JP2001267443A (en) | Package for storing semiconductor elements | |
| JP2001244408A (en) | Semiconductor device | |
| JPH08288643A (en) | Wiring board | |
| JPH08125063A (en) | Wiring board |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080706 Year of fee payment: 7 |
|
| LAPS | Cancellation because of no payment of annual fees |