JP3237294B2 - Method for manufacturing semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device having a two-layer wiring structure, and more particularly, to a method of manufacturing a semiconductor substrate having a through-hole formed in a lower wiring layer by continuously performing sputter cleaning in the same vacuum chamber. The present invention relates to a method for manufacturing a semiconductor device, wherein an upper wiring layer is formed after performing an interface treatment of the through hole.

[0002]

2. Description of the Related Art Conventionally, a semiconductor device having such a two-layer wiring structure is manufactured as shown in FIG. That is, in FIG. 2, the lower wiring layer 2 is first deposited on the surface of the semiconductor substrate 1 (FIG. 2).
(A)). Subsequently, the semiconductor substrate 1 is coated with a resist 3 having a predetermined pattern on the lower wiring layer 2 (see FIG. 2B). Here, in the semiconductor substrate 1, the lower wiring layer 2 is formed in a desired pattern by an etching process (see FIG. 2C).

On the semiconductor substrate 1 on which the lower wiring layer 2 is formed as described above, an interlayer film 4 is deposited thereon (see FIG. 2D), and a resist 5 having a through-hole pattern is applied. (See FIG. 2E). Here, the semiconductor substrate 1 is provided with a desired through hole 4a in the interlayer film 4 by the etching process (see FIG. 2F).

Further, after the interface treatment of the through hole portion is performed on the semiconductor substrate 1 by sputter cleaning, an upper wiring layer 6 is formed thereon (see FIG. 2 (G)). At this time, the upper wiring layer 6 is electrically connected to the lower wiring layer 2 in the region of the through hole 4a of the interlayer film 4.

By the way, the interface treatment by the sputter cleaning and the formation of the upper wiring layer 6 are generally performed in the same vacuum chamber by using a processing apparatus as shown in FIG. ) Is performed continuously as shown in the process diagram. In FIG. 3, the processing device 7 includes:
The semiconductor substrate 1 is configured to sequentially rotate from a loading position A to a cleaning position B, a heating position C, a deposit position D, and a cooling position E.

Therefore, when one semiconductor substrate 1 is loaded at the loading position A and sputter-cleaned at the cleaning position B, the next substrate 1 is loaded at the loading position A. Subsequently, the first semiconductor substrate 1 is heated to a predetermined temperature at a heating position C. At this time, the next semiconductor substrate 1 is loaded at the loading position A of the processing device 7 (see FIG. 4).

[0007] Thereafter, the first semiconductor substrate 1 is moved from the heating position C to the deposit position D, and an upper wiring layer is deposited on the surface of the semiconductor substrate 1. At this time, the next next semiconductor substrate 1 is moved to the cleaning position B, and is simultaneously sputter cleaned. Subsequently, the first semiconductor substrate 1 moves to the cooling position E and is cooled, and the next next semiconductor substrate 1 is heated to a predetermined temperature at the heating position C.

In this way, the semiconductor substrate 1
Are loaded at the loading position A of the processing apparatus 7, and are sequentially subjected to sputter cleaning, heating, depositing and cooling of the upper wiring layer, and when returning to the loading position A of the processing apparatus 7, a new semiconductor substrate and Will be replaced.

[0009]

However, in the method of manufacturing a semiconductor device configured as described above, one semiconductor substrate 1 is placed in the same vacuum chamber of the processing apparatus 7.
On the other hand, when the upper wiring layer is deposited, the next next semiconductor substrate is subjected to sputter cleaning, so that gas is generated in the vacuum chamber by the sputter cleaning.

Therefore, when depositing the upper wiring layer of the semiconductor substrate at the same time, the interface of the through hole of the semiconductor substrate which has been already cleaned by the sputter cleaning is contaminated by the gas.

Thus, in particular, there has been a problem that the lower wiring layer and the upper wiring layer may not be able to be electrically connected via the through hole with the recent reduction in the size of the through hole.

The present invention has been made in view of the above, and in a semiconductor device having a two-layer wiring structure, when conducting sputter cleaning and continuous processing of an upper wiring layer, conduction of a through-hole portion can be reliably ensured. It is another object of the present invention to provide a method for manufacturing a semiconductor device.

[0013]

According to the present invention, there is provided, according to the present invention, a processing apparatus having a plurality of processing positions including a cleaning position, a heating position, and a deposit position in a same vacuum chamber, and a plurality of semiconductor devices. A method of manufacturing a semiconductor device in which a substrate is continuously moved to perform a film forming process by sequentially moving the plurality of processing positions, wherein a semiconductor substrate having a through hole formed in a lower wiring layer is sputter-cleaned at a cleaning position. In the method of manufacturing a semiconductor device having a two-layer wiring structure, in which an upper wiring layer is deposited at a deposit position after performing the interface processing of the through hole, a plurality of the semiconductor substrates sequentially moving at a plurality of processing positions When simultaneously moved to the cleaning position and the deposit position, sputter cleaning at the cleaning position, Serial after deposition of the upper wiring layer deposit position, characterized in that it has to be initiated, by the method of manufacturing a semiconductor device, is achieved.

[0014]

According to the above structure, when the semiconductor substrate moves to the cleaning position and the deposit position at the same time, after the upper wiring layer is deposited on the surface of the semiconductor substrate at the deposit position, sputter cleaning of the semiconductor substrate at the cleaning position starts. Therefore, when depositing the upper wiring layer on the surface of the semiconductor substrate, sputter cleaning of the next semiconductor substrate is not performed at the same time.

For this reason, during deposition, no gas is generated in the vacuum chamber due to sputter cleaning.

Therefore, the interface of the through hole of the semiconductor substrate is not contaminated by the gas, and the upper wiring layer and the lower wiring layer can be reliably made conductive through the through hole. You will get.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the embodiments shown in the drawings. FIG. 1 shows an embodiment of a method of manufacturing a semiconductor device according to the present invention. In FIG. 1, a semiconductor device 10 is manufactured using the processing device 7 of FIG. 3 according to the process shown in FIG.

In this case, in the processing apparatus 7, one semiconductor substrate 1 on which a lower wiring layer is formed is loaded at a loading position A as shown in FIG. Then, it is heated to a predetermined temperature at a heating position C. At this time, the loading position A of the processing device 7
As shown in FIG. 1B, the next next semiconductor substrate 1
Is loaded. At this time, the next semiconductor substrate 1 is sputter-cleaned at the cleaning position B.

Thereafter, the first semiconductor substrate 1 is moved from the heating position C to the deposit position D, and an upper wiring layer is deposited on the surface of the semiconductor substrate 1. At this time, the next substrate moves to the heating position C and is heated. Then, the next next semiconductor substrate 1 is moved to the cleaning position B, and after the deposition of the upper wiring layer on the semiconductor substrate 1 is completed, sputter cleaning is started and the interface of the through hole is cleaned. . Subsequently, the first semiconductor substrate 1 moves to the cooling position E and is cooled, and the next next semiconductor substrate 1 is heated to a predetermined temperature at the heating position C.

In this manner, the semiconductor substrate 1
Are loaded at the loading position A of the processing apparatus 7, and are sequentially subjected to sputter cleaning, heating, depositing and cooling of the upper wiring layer, and when returning to the loading position A of the processing apparatus 7, a new semiconductor substrate and Will be replaced.

In this case, as shown in FIG. 1, after the upper wiring layer is deposited on the surface of the semiconductor substrate 1, the next next semiconductor substrate is subjected to sputter cleaning. At the time of depositing the wiring layer, since the next semiconductor substrate is not sputter cleaned at the same time, no gas is generated in the vacuum chamber by the sputter cleaning. Therefore, the interface of the through hole of the semiconductor substrate 1 is not contaminated. Thus, the upper wiring layer and the lower wiring layer
Through the through-hole, conduction can be ensured.

[0022]

As described above, according to the present invention, in a semiconductor device having a two-layer wiring structure, conduction in a through-hole portion is reliably ensured during sputter cleaning and continuous processing of an upper wiring layer. Thus, it is possible to provide an extremely excellent method for manufacturing a semiconductor device.

[Brief description of the drawings]

FIGS. 1A and 1B are process diagrams sequentially showing processing steps of a semiconductor substrate according to the method of the present invention.

FIGS. 2A to 2G are schematic diagrams sequentially showing a general method of manufacturing a semiconductor device having a two-layer wiring structure. FIGS.

FIG. 3 is a schematic diagram of a processing apparatus for continuously performing sputter cleaning and an upper wiring layer of FIG. 2;

FIGS. 4A and 4B are process charts sequentially showing conventional semiconductor substrate processing steps in the processing apparatus of FIG. 3; FIGS.

[Explanation of symbols]

 10 Semiconductor substrate

Claims (1)

(57) [Claims] 1. A processing apparatus having a plurality of processing positions including a cleaning position, a heating position, and a deposit position in the same vacuum chamber, and a plurality of semiconductor substrates are sequentially moved in the plurality of processing positions. A method of manufacturing a semiconductor device in which a film forming process is performed, wherein a semiconductor substrate having a through-hole formed in a lower wiring layer is subjected to an interfacial treatment of the through-hole by sputter cleaning at a cleaning position, and then, at a deposit position. In order to deposit the upper wiring layer, in the method of manufacturing a semiconductor device having a two-layer wiring structure, when the plurality of semiconductor substrates sequentially moving a plurality of processing positions are simultaneously moved to the cleaning position and the deposit position, Sputter cleaning at the cleaning position is performed after depositing the upper wiring layer at the deposit position. And a method of manufacturing a semiconductor device.