JP3278302B2 - Method for manufacturing double-sided wiring type film carrier - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a double-sided wiring type film carrier on which a semiconductor chip or the like is mounted.

[0002]

2. Description of the Related Art As a carrier tape used for a tape carrier package or a flexible printed wiring board, a double-sided wiring type film carrier (2 metal layer TA) is used.
B) is known. In this double-sided wiring type film carrier, wiring patterns are provided on both sides of an insulating film such as a polyimide film in order to improve the electrical characteristics and mounting density of the conventional film carrier. The wiring patterns on both surfaces are electrically connected via vias provided in the insulating film.

FIG. 12 shows a conventional example of a double-sided wiring type film carrier (when used as a carrier tape). In this example, the inner leads 6
0, a wiring pattern such as an outer lead 61 is formed, and a semiconductor chip 63 is mounted. Further, in order to improve the electrical characteristics of the film carrier, a wiring pattern serving as the ground plane 62 is formed on the lower surface of the insulating film to obtain effects such as impedance matching and crosstalk prevention. The ground plane 62 is connected to the ground lead of the inner lead 60 and the outer lead 61 through the via hole 20.

FIG. 11 shows a conventional example of a method of manufacturing a double-sided wiring type film carrier, particularly a method of manufacturing a via portion connecting between double-sided wiring patterns. In this conventional method, a polyimide film with a single-sided copper foil in which a metal layer 12 such as a copper foil is adhered to one side of an insulating film 10 such as a polyimide film is used (FIG. 11A). A resist pattern 14 is formed on the metal layer 12 to form a wiring pattern (FIG. 11B), and a wiring plating 16 is provided using the metal layer 12 as a plating power supply layer (FIG. 11C).

Next, in order to form a via hole in the insulating film 10, a resist 18 is formed on the upper and lower surfaces of the polyimide film.
Then, a resist pattern is formed on the lower surface of the insulating film 10 so as to match the via position (FIG. 11D), and the insulating film 10 is etched to form the via holes 20. FIG.
(e) shows a state in which the via hole 20 is formed and the resist 18 is removed. The via hole 20 can be formed by wet etching, dry etching, laser etching, or the like.

Next, metallization is performed on the via hole 20, and a metal layer 22 is formed on the inner surface of the via hole 20 and the lower surface of the insulating film 10.
Is provided (FIG. 11F). For this metallization, a sputtering method, an evaporation method, an electroless plating method, or the like can be applied. Next, in order to apply wiring plating to the metal layer 22, a resist 24 is applied to both surfaces, and a resist 24 on the lower surface is patterned (FIG. 11 (g)), and a wiring plating 26 is formed using the metal layer 22 as a plating power supply layer. I do. Next, the resist 24 is removed,
By etching and removing the metal layer 12 and the metal layer 22 with an etchant that erodes only the metal layers 12 and 22, a required wiring pattern 28 is formed on both sides of the insulating film 10.
a, a film carrier having 28b is obtained.

[0007]

In the film carrier obtained by the above method, the wiring patterns 28a and 28b provided on both surfaces of the insulating film 10 are electrically connected by the metal layer 22 provided in the via hole 20. . Via hole 20
Is formed by etching the insulating film 10 as described above. Therefore, in order to secure electrical conduction between the wiring patterns 28a and 28b, it is necessary to reliably open the via hole 20 during the etching process.

However, it is very difficult to form the via hole 20 accurately in actual operation. The via hole 20 is formed by a wet etching method, a laser etching method, or the like, but it is difficult to accurately determine the end point position of the via by such processing. If the via processing is performed under excessive etching conditions, the via size will be larger than a predetermined size (wet etching method),
Damage to the metal layer (copper foil) at the bottom of the via is increased (laser etching method). If the via processing is insufficient, the via hole is not completely opened and the insulating film remains thin at the bottom of the via, so that conduction between the wiring patterns formed on both sides of the insulating film cannot be obtained.

In the case of the conventional manufacturing method, the metallization is applied to the inner surface of the via hole even when the insulating film is thinly left at the bottom of the via as described above. Looks like. It is almost impossible to determine the electrical continuity of the via hole portion by a visual inspection, and this is an important problem in the production of a conventional film carrier. In designing a double-sided wiring type film carrier, the wiring pattern on one side of the insulating film and the wiring pattern on the other side are designed as independent patterns that are connected only at the via hole portion. In such a product, if electrical conduction is not ensured in the via hole portion, the product will be directly defective. A conventional method for determining the quality of such a product is to inspect the electrical continuity of each individual pattern of the finished product.

The conventional method of manufacturing a double-sided wiring type film carrier involves a step of forming a via hole in a polyimide film and a step of forming a wiring pattern.
Although there are various methods, any of the conventional methods cannot determine the electrical continuity in the via hole portion during the manufacturing process as in the above-described example.

The present invention has been made in order to solve these problems, and an object of the present invention is to provide a double-sided wiring type film carrier in which wiring patterns on both surfaces of an insulating film are electrically connected at via portions. Double-sided wiring that can easily and reliably determine the electrical continuity in the via part during the manufacturing process, making it extremely easy to inspect the product and thereby obtaining a highly reliable product It is an object of the present invention to provide a method for producing a mold film carrier.

[0012]

The present invention has the following arrangement to achieve the above object. That is, in a method for manufacturing a double-sided wiring type film carrier in which wiring patterns are provided on both surfaces of an insulating film and the wiring patterns on both surfaces are electrically conducted at via portions provided in the insulating film, one of the insulating films is provided. A first metal layer is formed on the surface, a via hole is formed from the other surface of the insulating film to the first metal layer, and the other surface is metalized to form an inner surface of the via hole and the a second metal layer provided on the other surface of the insulating film, edge the second metal layer
And quenching, absolute independence pattern shape of the wiring pattern electrically conductive communication with the first metal layer only in the via hole portion
Formed on the other surface of the edge the film, the wiring pattern of the other surface of the insulating film before Symbol first metal layer as a feeding <br/> conductive layer
After applying an exterior plating having a different hue from that of the second metal layer , the first metal layer is etched to form one of the insulating films.
A wiring pattern is formed on the surface .

[0013] Further, an insulating film is formed on one surface of the insulating film.
Wiring pattern finally formed on the formed first metal layer
After plating the wiring according to the above, the first metal layer is etched.
And forming a wiring pattern on one surface of the insulating film . In addition, the second metal layer
When forming a wiring pattern of an independent pattern shape,
According to the wiring pattern finally formed on the second metal layer,
After the wiring plating is performed on the second metal layer, the first metal
Exterior with a hue different from that of the wiring plating using the layer as a power supply layer
Plating is applied to the wiring plating, and the second metal layer is etched.
Forming a wiring pattern . Also, the first metal layer is etched to form a wiring pattern.
After forming, the outer surface of the wiring pattern of the first metal layer
It is characterized by applying exterior plating by dissolving plating .

Also, wiring patterns are provided on both sides of the insulating film.
Is provided, and the via portion provided in the insulating film is
Double-sided wiring type with electrically connected wiring patterns on both sides
In the method for producing a film carrier, the insulating film
Forming a first metal layer on one surface of the insulating layer;
A via hole extending from the other surface of the metal layer to the first metal layer.
And metallizing the other surface to form the via hole.
A second metal on the inner surface and the other surface of the insulating film
Providing a layer, etching said first metal layer,
A hole that is electrically conductive only with the second metal layer only at the hole portion.
Connect the vertical pattern wiring pattern to one of the insulating films.
And a second metal layer serving as a power supply layer and an insulating film.
The color of the wiring pattern on one side of the LUM
After applying different exterior plating, the second metal layer is etched.
The wiring pattern on the other side of the insulating film.
It is characterized by forming . In addition, the insulating film
The first metal layer deposited on one side is finally
Wiring plating was applied according to the wiring pattern to be formed
Then, the first metal layer is etched to form one of the insulating films.
Is characterized in that a wiring pattern is formed on the surface . A wiring pattern finally formed on the second metal layer;
After plating the wiring according to the above, the second metal layer is etched.
The wiring pattern on the other side of the insulating film.
It is characterized by forming.

[0015]

The product to which the method for producing a double-sided wiring type film carrier according to the present invention is applied is that the wiring pattern on one side of the wiring patterns provided on both sides of the insulating film is the wiring pattern on the other side only in the via portion. Is formed in an independent pattern shape that is electrically connected to the In the manufacture of such a product, the present invention forms a wiring pattern having an independent pattern shape on an insulating film, and then uses the first or second metal layer formed on the opposite surface to the wiring pattern as a power supply layer. It is characterized in that the wiring pattern is subjected to exterior plating. As the exterior plating, the first and second metal layers or wiring plating layers having a hue that can be easily distinguished visually are used. By this, whether the exterior plating is deposited on the wiring pattern or not is determined in the via portion. It is possible to determine the electrical continuity. The independent pattern can be formed on either side of the first metal layer and the second metal layer, and the first or second metal layer on the side opposite to the side on which the independent pattern is formed is used as a power supply layer. Can be subjected to exterior plating.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings. (First Embodiment) FIG. 1 shows a first embodiment of a method for manufacturing a double-sided wiring type film carrier. Also in this example, a polyimide film with a single-sided copper foil is used as a substrate for manufacturing a film carrier as in the conventional example (FIG. 1 (a)). The polyimide film is used as the insulating film 10, and an epoxy film containing glass fibers, a polyester film, or the like can be used instead of the polyimide film. The copper foil is used as the first metal layer 12, and may be a conductive metal foil other than a copper material. Also, the first metal layer 12 is formed by a sputtering method,
It is not particularly limited, such as a vapor deposition method. FIG. 1B shows a state in which a resist pattern is formed on the surface of the first metal layer 12 of the polyimide film with single-sided copper foil, and the wiring plating 16 is formed using the first metal layer 12 as a power supply layer. As the plating configuration of the wiring plating 16, gold / nickel / copper or gold / nickel plating is preferable.

Next, in order to form a via hole on the lower surface of the insulating film 10, the upper surface of the wiring plating 16 and the insulating film 1 are formed.
The lower surface of the substrate 0 is covered with a protective resist 18, and the resist 18 on the lower surface is patterned according to the pattern of the via hole position (FIG. 1 (c)). In the case where the via hole is formed by laser etching, the resist 18 is unnecessary. FIG. 1D shows a state in which a via hole 20 is formed in the insulating film 10.

Next, the via hole 20 is metallized, and a second metal layer 22 is provided on the inner surface of the via hole 20 and the lower surface of the insulating film 10 (FIG. 1 (e)). The second metal layer 22 is formed by a sputtering method, an evaporation method, an electroless plating method, or the like. Although the metal used for the second metal layer 22 is not particularly limited,
In the examples, copper was used in terms of electrical characteristics and the like. next,
In order to apply wiring plating to the lower surface of the insulating film 10, a protective resist 24 is formed on both surfaces of the insulating film 10.
Is formed in accordance with a wiring pattern to form a resist 24 provided on the lower surface of the substrate (FIG. 1 (f)).

FIG. 1G shows a state in which the second metal layer 22 has been subjected to wiring plating 26 and the resist 24 on the lower surface of the insulating film 10 has been removed. The wiring plating 26 is the second metal layer 2
2 is used as a power supply layer. As the plating configuration of the wiring plating 26, nickel / copper, nickel, and copper are preferable. Next, the second metal layer 22 is etched leaving only the portion where the wiring plating 26 is applied, and the wiring pattern 28b on the lower surface is etched.
Is formed (FIG. 1 (h)). At this time, the etching solution contains the second
That erodes and dissolves only the metal layer 22 is used.

Next, the outer plating 3 is applied to the wiring pattern 28b.
0 (FIG. 1 (i)). The exterior plating 30 is characterized by being formed by electrolytic plating using the first metal layer 12 as a power supply layer. By this plating, a plating film is formed on the exposed surface of the wiring pattern 28b as shown in FIG. You. As the exterior plating 30, gold / nickel or gold plating is preferable. The outer plating 30 has a function of protecting the outer surface of the wiring pattern 28b, and confirms that the outer plating 30 has been formed on the wiring pattern 28b. 28b has a function for inspecting electrical continuity in that it is possible to confirm that electrical continuity has been established with 28b. That is, it is possible to determine the electrical continuity at the via portion only by visually checking whether or not the exterior plating 30 is formed on the wiring pattern 28b.

Next, the first metal layer 12 on the upper surface of the insulating film 10 is removed by etching except for the portion on which the wiring plating 16 is formed to form a wiring pattern 28a on the upper surface (FIG. 1 ( j)). At this time, an etchant that erodes and dissolves only the first metal layer 12 is used. In this way, the wiring patterns 28a and 28b are respectively formed on both surfaces of the insulating film 10, and a double-sided wiring type film carrier in which the wiring patterns 28a and 28b are securely electrically conducted at the via hole portions is obtained. The method of manufacturing the double-sided wiring type film carrier of the present embodiment includes the wiring patterns 28a and 28b as described above.
It is characterized in that it can be manufactured by easily determining the electrical conduction between them.

(Second Embodiment) FIG. 2 shows a second embodiment of a method for manufacturing a double-sided wiring type film carrier. In the present embodiment, a via hole is formed in the insulating film 10 and the second metal layer 22 is deposited and formed in the same manner as in the first embodiment up to the step of FIG. The wiring pattern 28b is formed by etching. FIG. 2A shows a state in which a resist 24 is patterned to etch the second metal layer 22 in a predetermined pattern, and FIG. 2B shows a state in which the second metal layer 22 is etched to be independent on the lower surface of the insulating film 10. Of the wiring pattern 28b is formed.

Also in this embodiment, the outer plating 30 is provided on the wiring pattern 28b to protect the wiring pattern 28b and to determine the electrical continuity at the via hole. Therefore, similarly to the first embodiment, the outer plating 30 is applied to the wiring pattern 28b using the first metal layer 12 as a power supply layer (FIG. 2).
(c)) The wiring pattern 28a is formed by etching the first metal layer 12 except for the portion where the wiring plating 16 is applied (FIG. 2 (d)).

(Third Embodiment) FIG. 3 shows a third embodiment of a method for manufacturing a double-sided wiring type film carrier. In this embodiment,
Unlike the first embodiment, the step of forming the wiring pattern 28a is a later step than the step of forming the via hole 20. FIG. 3A shows a state in which a resist 18 is patterned to form a via hole 20 by etching the insulating film 10. FIG. 3B shows a state in which a via hole 20 has been opened and a second metal layer 22 has been applied, and FIG. 3C shows a state in which a resist 24 has been patterned on the lower surface to apply wiring plating 26.

In this state, wiring plating 26 is performed using the second metal layer 22 as a power supply layer (FIG. 3D), and the metal layer is etched to form an independent wiring pattern 28b. Is used as a power supply layer, and the external plating 30 is applied to the wiring pattern 28b. The steps so far are the same as in the method of the first embodiment. Next, the resist 24 is removed, and the first metal layer 1 is removed.
A resist 32 for pattern-etching 2 is provided (FIG. 3E). The resist 32 on the first metal layer 12 is provided only in the portion where the first metal layer 12 remains, and the first metal layer 1
2 is etched to form a wiring pattern 28a (FIG. 3 (f)).

Next, an outer plating 34 is formed on the wiring pattern 28a by electroless plating, and a resist 32 on the lower surface is formed.
Is removed (FIG. 3 (g)). Thus, a film carrier in which the wiring patterns 28a and 28b are electrically conducted at the via portion is obtained. Also in this embodiment, the first metal layer 12
By applying the external plating 30 as a power supply layer, it is possible to reliably determine the electrical continuity between the wiring patterns 28a and 28b.

(Fourth Embodiment) FIG. 4 is similar to the third embodiment except that the step of applying the wiring plating 26 to the second metal layer 22 (the step of FIG. 3D) is omitted. 2 shows a double-sided wiring type film carrier obtained by etching the second metal layer 22 to form an independent wiring pattern 28b. In this embodiment, the wiring pattern 28
After the formation of the first metal layer 12b,
The outer plating 30 is provided as a plating power supply layer.
The first metal layer 12 is etched to form a wiring pattern 28a.
Is formed, and an exterior plating 34 is applied to the wiring pattern 28a by electroless plating.

(Fifth Embodiment) FIG. 5 shows a fifth embodiment of a method for manufacturing a double-sided wiring type film carrier. In the manufacturing method of this embodiment, wiring plating is provided on the lower surface of the insulating film 10 and the second metal layer 22 is etched to form an independent wiring pattern 28b in the same manner as in the third embodiment up to the step of FIG. (FIG. 5A), an outer plating 30 is provided using the first metal layer 12 as a power supply layer (FIG. 5B). Then, the first metal layer 12
A resist 36 is formed on both surfaces to apply wiring plating thereon (FIG. 5C), a wiring plating 38 is provided (FIG. 5D), and the first metal layer 12 is etched to form a wiring pattern 28a. (FIG. 5 (e)).

(Sixth Embodiment) FIG. 6 shows a sixth embodiment of a method for manufacturing a double-sided wiring type film carrier. In this embodiment, except that the second metal layer is not plated with wiring.
Manufacture in the same manner as When forming the wiring pattern 28b on the lower surface of the insulating film 10, the second metal layer 22 is etched to form the wiring pattern 28b, and the first metal layer 1
2 as a power supply layer, and external plating 30 on the wiring pattern 28b.
Is provided, a wiring pattern 38 is formed on the upper surface to form a wiring pattern 28a. FIG. 6 shows the double-sided wiring type film carrier thus obtained.

(Seventh Embodiment) FIG. 7 shows a seventh embodiment of a method for manufacturing a double-sided wiring type film carrier. In each of the above embodiments, the wiring pattern 28 provided on the lower surface of the insulating film 10 is used.
In contrast, in the present embodiment, the wiring pattern 28a provided on the upper surface of the insulating film 10 is coated with the exterior plating to determine the electrical continuity at the via hole 20. It is characterized in that the electrical continuity is determined.

In this embodiment, a polyimide film with a copper foil on one side is used as a base material in the same manner as in Embodiment 3, and FIGS. 7 (a) and 7 (b) are used.
As shown in (c), first, a resist 18 is provided on both surfaces of the insulating film 10, the insulating film 10 is etched to form a via hole 20, and the inner surface of the via hole 20 is metallized to form a lower surface of the insulating film 10. A second metal layer 22 is provided.

Next, a resist 40 is formed on the first metal layer 12 side.
The resist 40 on the first metal layer 12 side is patterned (FIG. 7D), and a wiring plating 42 is formed (FIG. 7D).
(e)). FIG. 7F shows that the first metal layer 12 is removed by etching while leaving the portion to which the wiring plating 42 is applied, and the insulating film 10 is removed.
In a state where a wiring pattern 28a is formed on the upper surface of the substrate. From this state, in the case of this embodiment, the outer plating 44 is provided on the wiring pattern 28a using the second metal layer 22 as a power supply layer (FIG. 7 (g)). The outer plating 44 has a function of protecting the wiring pattern 28a and, at the same time, has a function of determining the electrical continuity between the second metal layer 22 and the wiring pattern 28a. As the outer plating 44, gold / nickel or gold plating is preferable.

Next, in order to form a wiring pattern on the lower surface side of the insulating film 10, a resist 46 is provided as shown in FIG. 7 (h), and a wiring plating 48 is provided using the second metal layer 22 as a power supply layer. 46 is removed (FIG. 7 (i)).
Finally, the second metal layer 22 is etched to form a wiring pattern 28b on the lower surface of the insulating film 10. In the case of this embodiment, the outer plating 44 is applied to the wiring pattern 28a provided on the upper surface of the insulating film 10. In this case, as in the previous embodiment, whether or not the outer plating 44 is deposited is determined. The electrical conduction at the via hole portion can be confirmed only by inspecting the.

(Eighth Embodiment) FIG. 8 shows an eighth embodiment of a method for manufacturing a double-sided wiring type film carrier. In this embodiment, the wiring pattern 2 is formed in the same manner as in the seventh embodiment up to the step of FIG.
8a, after forming the outer plating 44, the second metal layer 22
Is etched to form a wiring pattern 28b. Therefore, after removing the resist 40 provided on the second metal layer 22, a resist 46 is provided on both surfaces as shown in FIG. 8A, and a wiring pattern for forming the resist 46 provided on the second metal layer 22 is formed. And the second metal layer 22 is etched to form a wiring pattern 28b (FIG. 8B).

Next, an outer plating 50 is applied to the outer surface of the wiring pattern 28b by electroless plating, and the resist 46 is removed to obtain a film carrier having the wiring patterns 28a and 28b on both surfaces (FIG. 8 (c)). The obtained film carrier is obtained by covering the wiring patterns 28a, 28b provided on both surfaces of the insulating film 10 with the outer platings 44, 50. The electrical conduction between the wiring patterns 28a and 28b can be confirmed by observing the deposition state of the exterior plating 44 as in the above-described respective examples.

(Ninth Embodiment) FIG. 9 shows a ninth embodiment of a method for manufacturing a double-sided wiring type film carrier. In this embodiment, as in the seventh embodiment, the inner surface of the via hole 20 of the insulating film 10 is metallized to provide the second metal layer 22, and then the first metal layer 12 is etched to form the wiring pattern 28a. It is based on the method. That is, a resist 40 is pattern-formed on the first metal layer 12 (FIG. 9A),
The first metal layer 12 is etched to form a wiring pattern 28a.
Is formed, and an exterior plating 44 is provided using the second metal layer 22 as a power supply layer (FIG. 9C).

Next, a wiring pattern 28b is formed on the lower surface side of the insulating film 10. The wiring pattern 28b is formed by a method of providing wiring plating using the second metal layer 22 as a power supply layer and a method of forming a second wiring pattern. There is a method of forming the metal layer 22 by etching. FIG. 9D shows a case where the wiring pattern 28b is formed by wiring plating, and FIG. 9E shows a case where the wiring pattern 28b is formed by etching and the outer plating 50 is formed by electroless plating. The form is shown.

(Tenth Embodiment) FIG. 10 shows a tenth embodiment of a method for manufacturing a double-sided wiring type film carrier. In this embodiment, similarly to the above embodiments, the outer plating 44 is applied to the wiring pattern 28a to determine the electrical continuity in the via hole portion. However, this embodiment is different from the above embodiments.
Before forming a wiring pattern on the first metal layer 12 side, the second
Wiring plating is applied to the metal layer 22 of FIG.
A wiring pattern 28a is formed on the metal layer 12 side.

FIG. 10A shows a state in which a resist 40 is formed on the second metal layer 22 in order to perform wiring plating.
0 (b) shows a state in which the wiring plating 26 is provided on the second metal layer 22. As the wiring plating 26, gold / nickel / copper or gold / nickel plating is preferable. Wiring plating 2
6, the resist 40 is removed, and the first metal layer 1 is removed.
2 to form a wiring pattern 28a, and then use the second metal layer 22 as a power supply layer to form a wiring pattern 28a.
The outer plating 44 is applied to 8a. Finally, the second metal layer 22
Is etched to form a wiring pattern 28b. FIG.
FIG. 10 (c) shows the case where the wiring pattern 28a is formed and then the first metal layer 12 is subjected to wiring plating and then the pattern is formed.
The final form of the double-sided wiring type film carrier when a pattern is formed by etching is shown.

Although various embodiments have been described above as a method of manufacturing a double-sided wiring type film carrier, the present invention applies an external plating to the surface of a wiring pattern provided on the outer surface of an insulating film and determines whether or not the external plating is deposited. The wiring pattern provided on both sides of an insulating film such as a polyimide film can be distinguished from the others by visually observing the electrical continuity between the wiring patterns in the via holes. Needs to be In other words, if there is a lead wire for electrically connecting between wiring patterns other than the via portion on the surface where the exterior plating is deposited, the exterior plating is also deposited by the electrical connection using the routing wire, so that the via portion is deposited. Cannot be determined. As described above, the present invention can be applied to a case where an independent pattern is provided in which the electrical continuity on the surface on which the exterior plating is deposited is limited to only the via portion. It goes without saying that the method of the present invention can be applied to products of various patterns with respect to via arrangement or wiring pattern design under the above conditions.

Note that, in the above-described embodiment, Embodiments 1 to
6 is an effective method when the wiring pattern 28b side is formed as an independent pattern, and Examples 7 to 10 are effective methods when the wiring pattern 28a side is an independent pattern. Further, in the case of forming the wiring patterns 28a and 28b in the above embodiment, a method of forming a wiring plating pattern on the first metal layer 12 or the second metal layer 22 and etching the first metal layer 12 or the second metal layer 22; Although a method of forming a pattern by etching 22 as it is has been described, a method of forming a wiring pattern more finely is to form a pattern by applying wiring plating in advance. This is because if the metal layer is etched as it is without applying the wiring plating, the metal layer is side-etched in an inverted trapezoidal shape, whereas if the metal plating is applied, the side etch of the metal layer can be reduced and the side surface of the wiring pattern can be reduced. This is because they can be formed almost vertically.

[0042]

According to the method for manufacturing a double-sided wiring type film carrier according to the present invention, by adopting the above-described manufacturing process, the electrical connection between the wiring patterns on both sides at the via portion provided in the insulating film is achieved. The continuity can be easily determined, the complexity of inspecting the electrical continuity of the via portion can be eliminated, and a highly reliable product can be reliably provided. In addition, the conventional manufacturing method can be applied to the manufacturing process, and the conventional manufacturing apparatus can be used.

[Brief description of the drawings]

FIG. 1 shows a first method of manufacturing a double-sided wiring type film carrier.
It is explanatory drawing which shows an Example.

FIG. 2 shows a second method of manufacturing a double-sided wiring type film carrier.
It is explanatory drawing which shows an Example.

FIG. 3 shows a third method of manufacturing a double-sided wiring type film carrier.
It is explanatory drawing which shows an Example.

FIG. 4 is a sectional view of a double-sided wiring type film carrier obtained by the method of the fourth embodiment.

FIG. 5 shows a fifth method of manufacturing the double-sided wiring type film carrier.
It is explanatory drawing which shows an Example.

FIG. 6 is a cross-sectional view of a double-sided wiring type film carrier obtained by the method of the sixth embodiment.

FIG. 7 shows a seventh method of manufacturing the double-sided wiring type film carrier.
It is explanatory drawing which shows an Example.

FIG. 8 shows the eighth method of manufacturing the double-sided wiring type film carrier.
It is explanatory drawing which shows an Example.

FIG. 9 shows a ninth method for manufacturing a double-sided wiring type film carrier.
It is explanatory drawing which shows an Example.

FIG. 10 is an explanatory view showing a tenth embodiment of a method for manufacturing a double-sided wiring type film carrier.

FIG. 11 is an explanatory view showing a conventional example of a method for manufacturing a double-sided wiring type film carrier.

FIG. 12 is an explanatory view showing a conventional example of a double-sided wiring type film carrier.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Insulating film 12 1st metal layer 16, 26, 38, 42, 48 Wiring plating 18, 24, 32, 36, 40, 46 Resist 20 Via hole 22 2nd metal layer 28a, 28b Wiring pattern 30, 34, 44, 50 Exterior plating 60 Inner lead 61 Outer lead 62 Ground plane 63 Semiconductor chip

Continuing on the front page (72) Inventor Nobuo Sato 1-6-1, Uchisaiwaicho, Chiyoda-ku, Tokyo Nippon Telegraph and Telephone Corporation (72) Inventor Masakaze Hosoya 1-16-1 Uchisaiwaicho, Chiyoda-ku, Tokyo Nippon Telegraph and Telephone Stocks In-company (56) References JP-A-55-38051 (JP, A) JP-A-2-77662 (JP, A) JP-A-2-122282 (JP, A) JP-A-7-335919 (JP, A) (58) Fields surveyed (Int. Cl. ⁷ , DB name) H01L 21/60 311 H05K 3/00 H05K 3/42 640

Claims (7)

(57) [Claims] 1. A method of manufacturing a double-sided wiring type film carrier, wherein wiring patterns are provided on both surfaces of an insulating film, and the wiring patterns on both surfaces are electrically connected at via portions provided in the insulating film. Forming a first metal layer on one surface of the insulating film, providing a via hole from the other surface of the insulating film to the first metal layer, and performing metallization on the other surface to form the via hole. a second metal layer provided on the other surface of the inner surface and the insulating film, by etching the second metal layer, electrically conductive communication with the first metal layer only in the via hole portion independently the pattern shape of the wiring pattern is formed on the other surface of the insulating film, before SL other insulating film of the first metal layer as a feeding conductive layer
After applying an exterior plating having a different hue from that of the second metal layer to the wiring pattern on the surface, the first metal layer is etched to form one of the insulating films.
Forming a wiring pattern on the surface of the film carrier. 2. An insulating film formed on one surface of an insulating film.
To the wiring pattern to be finally formed on the first metal layer
After wiring plating, the first metal layer is etched.
2. The method for manufacturing a double-sided wiring type film carrier according to claim 1 , wherein a wiring pattern is formed on one surface of the insulating film by performing coating . 3. A wiring having an independent pattern shape on a second metal layer.
When forming a pattern, the second metal layer
Wiring to the second metal layer according to the wiring pattern to be formed
After plating, it differs from the wiring plating using the first metal layer as a power supply layer
The method for producing a double-sided wiring type film carrier according to claim 1 or 2 , wherein a hue exterior plating is applied to the wiring plating, and a second metal layer is etched to form a wiring pattern . 4. A wiring pattern formed by etching a first metal layer.
After forming the pattern, the outer surface of the wiring pattern of the first metal layer
The method for producing a double-sided wiring type film carrier according to claim 1 , wherein an outer plating is performed by electroless plating . 5. A wiring pattern is provided on both sides of an insulating film.
And the vias provided in the insulating film
Double-sided wiring type fill with electrically conductive wiring pattern
The method of manufacturing a beam carrier, the insulation deposited and formed on one surface of the first metal layer of the film
And from the other surface of the insulating film, the first metal layer
A via hole communicating with the inner surface of the via hole is formed by metallizing the other surface.
And providing a second metal layer on the other surface of the insulating film.
And etching the first metal layer to form a via hole at the via hole.
Independent pattern electrically conductive only with the second metal layer
Form wiring pattern on one side of insulating film
And using the second metal layer as a power supply layer for one of the insulating films.
Exterior with different hue from the first metal layer on the surface wiring pattern
After plating, the second metal layer is etched to form the other of the insulating film.
Forming a wiring pattern on the surface of the film carrier. 6. An insulating film formed on one surface of an insulating film.
To the wiring pattern to be finally formed on the first metal layer
After wiring plating, the first metal layer is etched.
To form a wiring pattern on one side of the insulating film
The method for producing the double-sided wiring type film carrier according to claim 5, characterized in that the. 7. A wiring pattern finally formed on a second metal layer.
After plating the wiring according to the turn, the second metal
Etch the layer and trace the wiring pattern on the other side of the insulating film.
7. The fuel cell according to claim 5, wherein the first and second regions are formed.
Of manufacturing a double-sided wiring type film carrier.