JP3281248B2 - Superconducting resonant tunneling diode element - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a superconducting resonant tunneling diode.

[0002]

2. Description of the Related Art FIG. 11 is an energy band diagram of a resonance tunnel diode device according to the prior art. The resonance tunnel diode element includes a cathode region 10A, a barrier region 11A, a resonance region 12, a barrier region 11B, and an anode region 10B. FIG. 11 shows the energy level of each region.

[0003] Carriers (eg, electrons) are injected from the cathode region 10A to the anode region 10B. In FIG. 11, reference symbol eV is an operating voltage applied between the cathode region 10A and the anode region 10B. Both the cathode region 10A and the anode region 10B are formed of a semiconductor, for example, a GaAs compound semiconductor.

The barrier region 11A is a cathode region 10
A and the barrier region 1 formed between
1A forms a potential barrier. Barrier region 11B
Is formed between the anode region 10B and the resonance region 12, and the barrier region 11B forms a potential barrier similarly to the barrier region 11A. Cathode area 10A
Carriers injected into the anode region 10B from the barrier region 11A and 11B can be respectively transmitted through the tunnel injection. Each of the barrier regions 11A and 11B is formed of a semiconductor, for example, AlAs.

In the resonance region 12, the efficiency of carrier injection (carrier arrival rate) of carriers injected from the cathode region 10A into the anode region 10B can be improved by the resonance effect. That is, since the maximum current amount (peak current amount) can be particularly increased, the current-voltage characteristics of the resonant tunneling diode element can be improved. The resonance region 12 is formed of a semiconductor, for example, GaAs.

[0006]

In the conventional resonant tunnel diode device, the resonance region 12 is formed of a semiconductor, and the carriers are scattered when passing through the resonance region 12, so that the resonance effect is weakened. For this reason, the number of carriers reaching the anode region 10B from the cathode region 10A decreases, and a sufficient amount of current cannot be obtained, so that the current-voltage characteristics of the resonant tunneling diode element deteriorate.

The present invention has been made to solve the above problems, and the objects of the present invention are as follows.

(1) It is an object of the present invention to provide a superconducting device having a resonant tunnel diode element which can reduce the scattering of carriers in a resonance region, increase the amount of current, and have excellent current-voltage characteristics.

(2) Another object of the present invention is to make use of the material properties specific to superconductors and to increase the maximum current value.
An object of the present invention is to provide a superconducting device including a resonant tunnel diode element having a specific current-voltage characteristic.

(3) Another object of the present invention is to provide a superconducting device having a resonant tunneling diode element which can ease processing accuracy and is easy to manufacture.

[0011]

In order to achieve the above object, a superconducting resonant tunneling diode element according to the present invention is provided with a cathode region formed of a metal member and a metal member arranged at a distance from the cathode region. Formed between the anode region, the cathode region and the anode region, a resonance region formed of a superconductor, between the cathode region and the resonance region, and between the anode region and the resonance region. And an insulator formed respectively in the cathode region and the anode region of the resonant tunneling diode element,
Au is used for each, and in the resonance region, BKBO superconductor, YBCO superconductor, BSCCO superconductor, TBC
O superconductor, Nb superconductor, Nb ₃ Sn superconductor, Pb
It is characterized in that one of the superconductors is used.

Further, a superconducting resonant tunneling diode element of the present invention comprises a cathode region formed of a degenerate semiconductor,
An anode region formed apart from the cathode region and formed of a degenerate semiconductor; a resonance region formed between the cathode region and the anode region, formed of a superconductor; and a cathode region and a resonance region. And a barrier region formed between the anode region and the resonance region. The barrier region formed between the cathode region and the resonance region includes a degenerated semiconductor of the cathode region and the resonance region. A Schottky barrier region formed by a Schottky junction between the superconductor and the superconductor is used. The barrier region formed between the anode region and the resonance region includes a degenerate semiconductor in the anode region and a superconductor in the resonance region. And a Schottky barrier region formed by a Schottky junction between the two. As described above, the barrier region can be formed by directly joining the cathode region and the resonance region, and the barrier region can be formed by directly joining the anode region and the resonance region. Therefore, it is not necessary to separately form a layer for forming a barrier region between each of the cathode region and the anode region and the resonance region, so that the structure of the resonance tunnel diode element can be simplified.

[0013] The superconducting resonant tunneling diode element of the present invention further comprises a cathode region formed of a degenerate semiconductor;
An anode region disposed away from the cathode region and formed of a degenerate semiconductor; a resonance region formed between the cathode region and the anode region, formed of a superconductor; and a cathode region and a resonance region. And a barrier region formed between the anode region and the resonance region, respectively, between the cathode region and the resonance region of the resonance tunnel diode element, and between the anode region and the resonance region. An insulator is used for each of the barrier regions to be formed.

Here, an MgO thin film can be used for the barrier region.

In the superconducting resonant tunneling diode element of the present invention, the cathode region and the anode region each use STO into which Nb is introduced, and the resonance region includes
Any of a BKBO superconductor, a YBCO superconductor, a BSCCO superconductor, a TBCO superconductor, an Nb superconductor, an Nb ₃ Sn superconductor, and a Pb superconductor can be used.

[0016]

[0017]

[0018]

[0019]

[0020]

[0021]

[0022]

[0023]

[0024]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 FIG. 1 is a sectional view showing a vertical structure of a resonant tunnel diode element mounted on a superconducting device according to Embodiment 1. As shown in FIG. 1, the superconducting device is configured with the substrate 1 as a base, and the resonant tunneling diode element is configured on the surface of the substrate 1.

The substrate 1 is made of a material capable of forming a superconductor thin film. In this embodiment, a film can be formed on the superconductor at a low temperature of about 400 ° C., and the influence of thermally damaging other crystals is small, for example, BKBO
A (BaKBiO) -based superconductor is used. Therefore, as the substrate 1, for example, an STO (SrTiO ₃ ) crystal substrate having the same perovskite crystal structure as that of the BKBO-based superconductor or having the same crystal lattice spacing is used. The a-axis crystal lattice spacing of the STO crystal substrate is very close to the a-axis crystal lattice spacing of the BKBO-based superconductor. 10 ¹⁶ -10 ¹⁸ atoms / cm ^{3 for} STO crystal substrate
At a low concentration, Nb is introduced and Nb is not introduced, and the STO crystal substrate is basically used as an insulating substrate. The substrate 1 is a degenerate semiconductor substrate having a similar function, specifically, a BaBiO ₃ crystal substrate, KNbO ₃
Either a crystal substrate, a KTaO ₃ crystal substrate or a CeO ₂ crystal substrate can be used.

The resonance tunnel diode element includes a cathode region 4A, a barrier region 3, a resonance region 2, and a barrier region 3.
And an anode region 4B. The resonance region 2 is formed of a superconductor (a BKBO-based superconductor) formed directly on the surface of the substrate 1. Resonant region 2 formed by superconductor
Are at least the cathode region 4A and the anode region 4B
Is formed in a region including. In order to secure the quantum mechanical resonance effect, the resonance region length W of the resonance region 2 is set to, for example, 100 to 500 nm. In the structure of the resonant tunneling diode element according to the present embodiment, the resonance region length W is equal to the separation distance between the cathode region 4A and the anode region 4B. The thickness of the resonance region 2 is, for example, 1
It is set to 00-200 nm.

The superconductor in the resonance region 2 has BKBO
BaRb that can realize film formation at low temperature as in the case of system-based superconductors
BiO-based superconductors can be used. The superconductors in the resonance region 2 include YBCO-based superconductors, BSCCO-based superconductors, TBCO-based superconductors, Nb-based superconductors, and Nb ₃ Sn.
Superconductors, Pb-based superconductors and the like can be used, and all superconductors can be used.

The barrier region 3 has at least the resonance region 2
And cathode region 4A, and between resonance region 2 and anode region 4B. The barrier region 3 is formed on the surface of the resonance region 2. The barrier region 3 has at least a function as a tunnel region. In this embodiment, a barrier region formed of an MgO thin film or an amorphous thin film is used as the barrier region 3. This barrier region is formed with a thickness of, for example, about 3-5 nm at which a tunnel effect occurs.

The cathode region 4A and the anode region 4B
Are formed on the surface of the barrier region 3 and are separated from each other by a separation dimension corresponding to the resonance region length W of the resonance region 2. In the present embodiment, the cathode region 4A and the anode region 4B are formed of the same layer of a metal body, for example, Au. The metal body of the same layer means a metal body formed in the same film forming step in the manufacturing process.

FIG. 1 shows a path through which a current i flows in the resonant tunneling diode element. The current i flows from the anode region 4B through the resonance region 2 to the cathode region 4A. Electrons flow simultaneously with the current i and in the opposite direction.

FIG. 2 is an energy band structure diagram of the resonance tunnel diode element. In the resonance tunnel diode element shown in FIG.
The operating voltage applied between the anode region 4B and the reference sign Δ is the energy gap of the superconductor in the resonance region 2.

In the resonance tunnel diode element,
When an operating voltage eV is applied between the cathode region 4A and the anode region 4B, the resonance region 2
Is injected with majority carriers (electrons). The injected carriers pass through the barrier region 3 by tunnel injection. In the resonance region 2, carrier propagation is promoted by a quantum mechanical resonance effect, and majority carriers are injected from the resonance region 2 into the anode region 4B. The injected carriers are formed in the barrier region 3 by tunnel injection as described above.
Through.

FIG. 3 is a current-voltage characteristic diagram of the resonant tunnel diode element. In FIG. 3, the vertical axis indicates a current value, and the horizontal axis indicates a voltage value. The current-voltage characteristic D2 shown in FIG.
Is a current-voltage characteristic of the resonance tunnel diode element according to the related art shown in FIG. In this resonant tunneling diode element, first, the forward current simply increases with an increase in the voltage, and then the maximum current (peak current) I ₂₁ is obtained at the voltage V ₂₁ . And with current decreases exceeds the voltage V ₂₁ to increase the voltage, the current I ₂₂ of the minimum value in the voltage V ₂₂ is obtained. Exponentially current increases exceeds the voltage V _22.

The current-voltage characteristic D1 shown in FIG. 3 is the current-voltage characteristic of the resonant tunnel diode device according to the present embodiment. In the resonance tunnel diode element according to the present embodiment, a superconductor is used in the resonance region 2, and there is an energy gap Δ of the superconductor. Therefore, the potential of the cathode region 4A due to the operating voltage eV applied between the cathode region 4A and the anode region 4B becomes ε _F + Δ
In the following, no current flows, and a current flows after exceeding ε _F + Δ (see FIGS. 2 and 3). Then the maximum value of the current (peak current) I ₁₁ are obtained by the voltage V _11. Since the resonance region 2 can be improved injection efficiency of carriers can be reduced scattering of carriers by being formed by a superconductor, the current I ₁₁ of the maximum current - be higher than the voltage characteristic D2. Current with exceeding voltage V ₁₁ to increase the voltage decreases, voltage V
_{At 12} , a minimum current I ₁₂ is obtained. Exponentially current increases exceeds the voltage V _12. Current I ₁₂ of the minimum value in the voltage V _12, both in the current after exceeding the voltage V ₁₂ is the resonance region 2 energy gap Δ by formed of superconductors, and quantum mechanical resonance effects is reflected Thus, a negative resistance element having a unique current-voltage characteristic in the resonance tunnel diode element according to the present embodiment can be realized.

The energy gap Δ has a unique value for each material such as a BKBO superconductor and a YBCO superconductor. Therefore, by selecting the material of the superconductor forming the resonance region 2 according to the purpose, the current I _{11 having} the maximum value and the current I ₁₂ having the minimum value are uniquely controlled in a specific voltage-current characteristic D1. And a unique voltage-current characteristic D1 that can reduce carrier scattering in the resonance region 2 and improve carrier injection efficiency.

Furthermore, in the resonant tunneling diode according to the present embodiment can control the position of the current I ₁₁ of the maximum value by controlling the resonance region length W of the resonance region 2. By setting a longer resonance region length W, the position of the current I ₁₁ of the maximum value may be moved to the low voltage side. Conversely, if shorter resonance region length W, the position of the current I ₁₁ of the maximum value can move to the high voltage side.

<Manufacturing Method> FIGS. 4A and 4B are cross-sectional views showing steps for explaining a method of manufacturing a superconducting device having the above-described resonant tunneling diode element.

First, as shown in FIG. 4A, a substrate 1 is first prepared. As described above, the substrate 1 is an STO crystal substrate on which a superconductor can be formed on the surface.

Next, a superconductor is formed on the surface of the substrate 1, and a resonance region 2 is formed by the superconductor (see FIG. 4B). A BKBO-based superconductor is used as the superconductor, and the BKBO-based superconductor is formed by, for example, a high-frequency magnetron sputtering method. In the high-frequency magnetron sputtering method, a powder target obtained by solidifying BaKBiO ₃ powder by pressing is used as a sputtering target. The film formation condition is vacuum pressure 1
× 10 ⁻⁵ Pa, substrate temperature 300-400 ° C., mixed gas of sputtering gas O ₂ and Ar, gas flow ratio 1: 1,
Gas pressure 80 Pa, high frequency output 100 W, deposition rate 0.1
〓 / sec, deposition time 2000 sec. Under these conditions, a BKB having a thickness of 100-200 nm
An O-based superconductor can be formed.

Next, as shown in FIG. 4B, a barrier region 3 is formed on the surface of the resonance region 2. As the barrier region 3, a barrier region made of an MgO thin film or an amorphous thin film is used, and the MgO thin film is formed by, for example, a molecular beam epitaxy (MBE) method. The film formation condition is a substrate temperature of 20.
The temperature is set to 0 to 400 ° C, the film forming temperature is set to 200 to 400 ° C, and the growth rate is set to 0.1 to 0.5 ° / sec.

Next, as shown in FIG. 1, the cathode region 4A and the anode region 4B are formed on the surface of the barrier region 3.
Is formed. For example, Au formed in the same manufacturing process is used for the cathode region 4A and the anode region 4B.
u is formed by, for example, a sputtering method or an evaporation method.

When these series of manufacturing steps are completed, the resonant tunnel diode device according to the present embodiment is completed.

Embodiment 2 FIG. 5 is a cross-sectional view showing the vertical structure of a resonant tunnel diode mounted on a superconducting device according to Embodiment 2. In the resonance tunnel diode element according to the present embodiment, the cathode region 4A and the resonance region 2 are separated (junction separated) by the Schottky barrier region _SB1 , and the anode region 4B and the resonance region 2 are Schottky. It is separated by the barrier region _SB2 .

As the substrate 1 on which the resonance tunnel diode element is mounted, for example, an STO crystal substrate on which a thin film of a superconductor can be formed as in the superconducting device according to the first embodiment is used. 10 ¹⁶ -10 ¹⁸ atom for STO crystal substrate
Nb is introduced at a low concentration of about s / cm ³ , and Nb is not introduced, and the STO crystal substrate is basically used as an insulating substrate.

The resonance tunnel diode element includes a cathode region 4A, a Schottky barrier region S _B1 , a resonance region 2, a Schottky barrier region S _B2 and an anode region 4B.
Is provided as a basic configuration. The resonance tunnel diode element according to the present embodiment is characterized by including a Schottky barrier region S _B1 and a Schottky barrier region S _B2 instead of the barrier region 3 of the resonance tunnel diode element according to the first embodiment. .

The cathode region 4A and the anode region 4B of the resonant tunneling diode are separated from each other and formed on the surface layer of the substrate 1. The cathode region 4A and the anode region 4B are each formed of a conductive region in which Nb is introduced at a high concentration on the surface layer of the STO crystal substrate as the substrate 1 (degenerate semiconductor). The surface layer of the STO crystal substrate serving as the cathode region 4A and the anode region 4B has Nb at a high concentration of, for example, about 10 ¹⁸ -10 ¹⁹ atoms / cm ^3.
Is introduced. The distance between the cathode region 4A and the anode region 4B is equal to the resonance region length W.

The resonance region 2 is formed of a superconductor directly formed on the surface of the substrate 1 including the surface of the cathode region 4A and the surface of the anode region 4B. For example, a BKBO-based superconductor is used for the resonance region 2 similarly to the resonance region 2 of the resonance tunnel diode element according to the first embodiment.

The Schottky barrier region S _B1 is formed by contact between the degenerate semiconductor as the cathode region 4A and the superconductor as the resonance region 2. Schottky barrier region _SB1 is formed on the side of cathode region 4A from the interface between cathode region 4A and resonance region 2. FIG. 6 is an energy band diagram of the resonance tunnel diode element. In the resonance tunnel diode element shown in FIG.
_L1 is the barrier length of the Schottky barrier region _SB1 . The Schottky barrier region _SB2 is formed by contact between the degenerate semiconductor as the anode region 4B and the superconductor as the resonance region 2. The Schottky barrier region S _B2 extends from the interface between the anode region 4B and the resonance region 2 to the anode region 4B.
Formed on the side. In the resonance tunnel diode element shown in FIG. 6, reference symbol S _L2 denotes a barrier length of the Schottky barrier region S _B2 .

In the resonance tunnel diode device according to the present embodiment, the cathode region 4A and the anode region 4
B is formed on the surface layer of the substrate 1 and the cathode region 4A
A Schottky barrier region S _B1 between
Since each of the Schottky barrier regions S _B2 is formed between the anode region 4B and the resonance region 2, the first embodiment is used.
The need for the MgO thin film or the amorphous thin film as the barrier region 3 of the resonant tunneling diode element according to the above is unnecessary. Therefore, since the resonant tunnel diode element can be substantially realized by the substrate 1 and the resonant region (superconductor) 2, the structure of the resonant tunnel diode element can be simplified.

<Manufacturing Method> FIGS. 7A and 7B are cross-sectional views showing steps of a method for manufacturing a superconducting device having the above-described resonant tunneling diode element.

First, as shown in FIG. 7A, a substrate 1 is first prepared. As described above, the substrate 1 is an STO crystal substrate on which a superconductor can be formed on the surface.

Next, as shown in FIG. 7B, the cathode region 4A is located at a position separated from each other on the surface layer of the substrate 1.
And an anode region 4B. For forming the cathode region 4A and the anode region 4B, for example, FIB (Foc
Us Ion Beam) method is used, and Nb is introduced at a high concentration into the surface layer of the substrate 1 by the FIB method. This N
By introducing b, the surface layer of the substrate 1 becomes a degenerate semiconductor, and the cathode region 4A and the anode region 4B are formed.
Note that an ion implantation method can be used to introduce Nb.

Next, as shown in FIG. 5, a superconductor is formed on the surface of the substrate 1, and a resonance region 2 is formed by the superconductor. A BKBO-based superconductor is used for the superconductor, and the high-frequency magnetron sputtering method described in the manufacturing method of the first embodiment is used for forming the BKBO-based superconductor. Since the film forming conditions of the superconductor have already been described, the description of the film forming conditions is omitted in the manufacturing method according to the present embodiment.

When the resonance region 2 is formed, a Schottky barrier region _SB1 is formed between the resonance region 2 and the cathode region 4A, and a Schottky barrier region between the resonance region 2 and the anode region 4B. S _B2 is formed.

When these series of manufacturing steps are completed, the resonant tunnel diode device according to the present embodiment is completed.

Third Embodiment FIG. 8 is a cross-sectional view showing a vertical structure of a resonant tunnel diode element mounted on a superconducting device according to a third embodiment. In the resonance tunnel diode element according to the present embodiment, the cathode region 4A and the resonance region 2 are separated by the Schottky barrier region _SB1 and the barrier region 3, and the anode region 4B and the resonance region 2 are Schottky. It is separated by the barrier region _SB2 and the barrier region 3. That is, resonant tunneling diode according to this embodiment, barrier region 3 is formed between the resonance region 2 and the Schottky barrier region S _B1 of the resonant tunneling diode according to the second embodiment described above, the resonance region 2 Schottky barrier area S
_A barrier region 3 is formed between _B2 and _B2 . As the barrier region 3, an MgO thin film or an amorphous thin film is used similarly to the barrier region 3 of the resonance tunnel diode element according to the first embodiment.

FIG. 9 is an energy band structure diagram of the resonance tunnel diode element. As shown in FIG. 9, a Schottky barrier region _SB1 and a barrier region 3 are formed between the cathode region 4A and the resonance region 2 in a two-layer structure. Schottky barrier region S _B2 and barrier region 3 in the layer structure
Is formed.

<Manufacturing Method> FIGS. 10A to 10
(C) is sectional drawing shown in each process explaining the manufacturing method of the superconducting device provided with the above-mentioned resonant tunnel diode element.

First, as shown in FIG. 10A, a substrate 1 is first prepared. As described above, the substrate 1 is an STO crystal substrate on which a superconductor can be formed on the surface.

Next, as shown in FIG.
The cathode region 4A and the anode region 4B are formed on the surface layer of the first embodiment. The formation of the cathode region 4A and the anode region 4B is performed by using the F described in the manufacturing method according to the second embodiment.
The IB method is used, Nb is introduced at a high concentration into the surface layer of the substrate 1 by the FIB method, and the cathode region 4A and the anode region 4B are formed.

Next, as shown in FIG. 10C, the barrier region 3 is formed on the surface of the substrate 1 including at least the surface of the cathode region 4A and the surface of the anode region 4B. The barrier region 3 is formed by the molecular beam epitaxy described in the manufacturing method according to the first embodiment, and an MgO thin film or an amorphous thin film is formed.

Next, as shown in FIG. 8, a superconductor is formed on the surface of the barrier region 3, and the resonance region 2 is formed by the superconductor. The superconductor has BK
A BO-based superconductor is used, and the BKBO-based superconductor is formed by the high-frequency magnetron sputtering method described in the manufacturing method of the first embodiment. Since the film forming conditions of the superconductor have already been described, the description of the film forming conditions is omitted in the manufacturing method according to the present embodiment.

When the resonance region 2 is formed, a Schottky barrier region _SB1 and a barrier region 3 are formed between the resonance region 2 and the cathode region 4A, and between the resonance region 2 and the anode region 4B. A Schottky barrier region _SB2 and a barrier region 3 are formed.

When these series of manufacturing steps are completed, the resonant tunnel diode device according to the present embodiment is completed.

[0065]

According to the present invention, the following effects can be obtained.

(1) Scattering of carriers in the resonance region can be reduced, the amount of current can be increased, and a resonance tunnel diode element having excellent current-voltage characteristics can be provided. (2) Further, it is possible to provide a resonant tunnel diode element having specific current-voltage characteristics, which can utilize the material characteristics specific to the superconductor and can increase the maximum current value. (3) Further, it is possible to provide a resonance tunnel diode element in which processing accuracy can be eased and which can be easily manufactured.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a vertical structure of a resonant tunneling diode element mounted on a superconducting device according to a first embodiment.

FIG. 2 is an energy band structure diagram of the resonance tunnel diode element.

FIG. 3 is a current-voltage characteristic diagram of the resonant tunneling diode element.

FIGS. 4A and 4B are cross-sectional views showing steps for explaining a method of manufacturing a superconducting device including the above-described resonant tunneling diode element.

FIG. 5 is a cross-sectional view showing a vertical structure of a resonant tunneling diode element mounted on the superconducting device according to the second embodiment.

FIG. 6 is an energy band structure diagram of the resonance tunnel diode element.

FIGS. 7A and 7B are cross-sectional views showing steps for explaining a method of manufacturing a superconducting device including the above-described resonant tunneling diode element.

FIG. 8 is a cross-sectional view illustrating a vertical structure of a resonant tunneling diode element mounted on the superconducting device according to the third embodiment.

FIG. 9 is an energy band structure diagram of the resonance tunnel diode element.

FIGS. 10A to 10C are cross-sectional views illustrating each step of a method for manufacturing a superconducting device including the above-described resonant tunneling diode element.

FIG. 11 is an energy band structure diagram of a resonant tunnel diode device according to the related art.

[Explanation of symbols]

1 Substrate, 2 resonance region, 3 barrier region, 4A cathode region, 4B anode region.

──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Junnobu Yoshizato 2-5-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (56) References JP-A-1-173767 JP-A-6-204578 (JP, A) JP-A-6-169114 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 39/00 H01L 39/22-39/24 H01L 29/88

Claims (5)

(57) [Claims] A cathode region formed of a metal body; an anode region formed of a metal body and spaced apart from the cathode region; a cathode region formed between the cathode region and the anode region; A resonance region formed of a body, an insulator formed between the cathode region and the resonance region, and an insulator formed between the anode region and the resonance region, wherein the cathode region and the anode region each include: A
u is used, and in the resonance region, any one of BKBO superconductor, YBCO superconductor, BSCCO superconductor, TBCO superconductor, Nb superconductor, Nb ₃ Sn superconductor, and Pb superconductor is used. Superconducting resonance tunnel diode element. A cathode region formed of a degenerate semiconductor; an anode region formed at a distance from the cathode region and formed of the degenerate semiconductor; a cathode region formed between the cathode region and the anode region; A resonance region formed of a body, a barrier region formed between the cathode region and the resonance region, and a barrier region formed between the anode region and the resonance region, respectively, formed between the cathode region and the resonance region. The barrier region formed is a Schottky barrier region formed by a Schottky junction between the degenerate semiconductor in the cathode region and the superconductor in the resonance region, and a barrier formed between the anode region and the resonance region. In the region, a Schottky barrier region formed by a Schottky junction between a degenerate semiconductor in an anode region and a superconductor in a resonance region is used. Superconducting resonant tunneling diode element. A cathode region formed of a degenerate semiconductor; an anode region formed at a distance from the cathode region and formed of the degenerate semiconductor; a cathode region formed between the cathode region and the anode region; A resonance region formed of a body, between the cathode region and the resonance region, and a barrier region formed between the anode region and the resonance region, respectively, between the cathode region and the resonance region, In the barrier region formed between the anode region and the resonance region,
A superconducting resonant tunneling diode element wherein an insulator is used. 4. The superconducting resonant tunneling diode element according to claim 2 or 3, wherein an STO into which Nb is introduced is used for each of a cathode region and an anode region of the resonant tunneling diode device, In the resonance region, any one of a BKBO superconductor, a YBCO superconductor, a BSCCO superconductor, a TBCO superconductor, an Nb superconductor, an Nb ₃ Sn superconductor, and a Pb superconductor is used. Diode element. 5. The superconducting resonant tunneling diode element according to claim 3, wherein an MgO thin film is used for the barrier region.