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JP3286064B2 - Wafer plating rack and plating method using the same - Google Patents
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JP3286064B2 - Wafer plating rack and plating method using the same - Google Patents

Wafer plating rack and plating method using the same

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Publication number
JP3286064B2
JP3286064B2 JP3614794A JP3614794A JP3286064B2 JP 3286064 B2 JP3286064 B2 JP 3286064B2 JP 3614794 A JP3614794 A JP 3614794A JP 3614794 A JP3614794 A JP 3614794A JP 3286064 B2 JP3286064 B2 JP 3286064B2
Authority
JP
Japan
Prior art keywords
plating
wafer
rack
plating solution
support member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3614794A
Other languages
Japanese (ja)
Other versions
JPH07243098A (en
Inventor
博文 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EEJA Ltd
Original Assignee
Electroplating Engineers of Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electroplating Engineers of Japan Ltd filed Critical Electroplating Engineers of Japan Ltd
Priority to JP3614794A priority Critical patent/JP3286064B2/en
Publication of JPH07243098A publication Critical patent/JPH07243098A/en
Application granted granted Critical
Publication of JP3286064B2 publication Critical patent/JP3286064B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Electroplating Methods And Accessories (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、半導体用のウエーハに
めっきを施すための技術に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for plating a semiconductor wafer.

【0002】[0002]

【従来の技術】ウエーハにバンプめっきなどのめっき処
理を施すについてはそのめっき対象面だけを選択的にめ
っき液に接触させるようにすることが重要な要素になっ
ている。そのため従来では一般に図6に示すような基本
構造を持つめっきシステムが用いられている。このシス
テムは、めっき槽20の中にウエーハWの支持手段でも
あるカップ状の噴射槽21を設け、この噴射槽21の上
端にウエーハWをそのめっき対象面が下側になる状態で
被せるようにして固定し、この状態で噴射槽21内にめ
っき液を加熱槽22から循環管路23を介して噴射状で
供給するようにしており、噴射槽21に供給されためっ
き液Mは、ウエーハWのめっき対象面に接触しつつ周辺
へ広がる流れを形成してめっき槽20に流れ出して行く
(例えば実公昭58−8774号公報、実開平3−19
70号公報、実開平4−44371号公報等を参照)。
2. Description of the Related Art When plating a wafer, such as bump plating, it is an important factor to selectively bring only the surface to be plated into contact with a plating solution. Therefore, conventionally, a plating system having a basic structure as shown in FIG. 6 is generally used. In this system, a cup-shaped jet tank 21 which is also a support means for a wafer W is provided in a plating tank 20, and the upper end of the jet tank 21 is covered with the wafer W with its surface to be plated facing down. In this state, the plating solution is supplied into the spray tank 21 from the heating tank 22 through the circulation pipe 23 in a spray form. The plating solution M supplied to the spray tank 21 is supplied to the wafer W A flow spreading to the periphery while contacting the surface to be plated is formed and flows out to the plating tank 20 (for example, Japanese Utility Model Publication No. 58-8774, Japanese Utility Model Application Laid-Open No. 3-19).
No. 70, Japanese Utility Model Laid-Open No. 4-44371, etc.).

【0003】これから分かるように、従来のシステムで
は、1個の噴射槽について1枚ずつしかウエーハを処理
することができない。このことは、処理効率上の問題、
特にウエーハ1枚につき使用するめっき液の量が多くな
るという問題をもたらし、また大量のウエーハを効率的
に処理するために多数の噴射槽を横方向に並べて設けな
ければならず、そのために装置全体が大型化するという
問題ももたらしている。
[0003] As can be seen, in the conventional system, only one wafer can be processed per injection tank. This is a processing efficiency issue,
In particular, there is a problem that a large amount of plating solution is used per wafer, and a large number of spray tanks must be provided in a horizontal direction in order to efficiently process a large amount of wafers. However, there is also a problem that the size of the device increases.

【0004】また従来のシステムでは、噴射槽内にめっ
き液を噴射供給する必要があるので、めっき槽やめっき
液供給機構などの装置要素が複雑になり、このことが、
装置全体の大型化の他の要因ともなると共に、装置の固
定的な配置を要求する所以となって工場スペースの効率
的利用を妨げることになっていた。
Further, in the conventional system, since it is necessary to jet and supply a plating solution into an injection tank, equipment elements such as a plating tank and a plating solution supply mechanism become complicated.
This is another factor in increasing the size of the entire apparatus, and also requires a fixed arrangement of the apparatus, which hinders efficient use of the factory space.

【0005】[0005]

【発明が解決しようとする課題】従って本発明の目的
は、複数枚のウエーハを1個の支持手段、具体的にはラ
ックで支持させて処理できるようにすることで、ウエー
ハ1枚当たりのめっき液の使用量の節減や装置全体の小
型化、さらにはめっき槽やめっき液供給機構などの装置
要素の簡易化を図れるようにすることにある。
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to enable a plurality of wafers to be processed while being supported by a single supporting means, specifically, a rack, so that plating per wafer can be performed. It is an object of the present invention to reduce the amount of solution used, reduce the size of the entire apparatus, and simplify the apparatus elements such as a plating tank and a plating solution supply mechanism.

【0006】[0006]

【課題を解決するための手段】このような目的のため
に、本発明では、保持対象のウエーハの周縁部を一定の
幅で支持するための支持面を有する環状の支持部材、及
びこの支持部材に支持されたウエーハの裏面をめっき液
からシールするためのシール機構よりなる複数の保持ユ
ニットをそれぞれの支持部材の周縁を介して複数本の支
柱により多段状態に支持させてなる構造のめっき用ラッ
クを用いるものとしており、保持ユニットの数に応じた
枚数のウエーハを保持させたこのめっき用ラックをめっ
き槽内のめっき液に浸漬させ、この浸漬状態で各保持ユ
ニットのウエーハの表面にめっき液を流動的に接触させ
てめっきを施すようにしている。
For this purpose, the present invention provides an annular support member having a support surface for supporting a peripheral portion of a wafer to be held at a constant width, and this support member. Plating rack having a structure in which a plurality of holding units each configured by a sealing mechanism for sealing the back surface of a wafer supported by a plating solution from a plating solution are supported in a multi-stage state by a plurality of columns via the periphery of each supporting member. This plating rack holding a number of wafers corresponding to the number of holding units is immersed in the plating solution in the plating tank, and in this immersion state, the plating solution is applied to the surface of the wafer of each holding unit. The plating is applied by fluid contact.

【0007】このような本発明によると、一個の支持手
段、つまりラックで複数枚のウエーハを同時に処理でき
るので、ウエーハ1枚当たりのめっき液の使用量を大幅
に節減できるし、また処理能力当たりの装置サイズを小
さくできる。
According to the present invention, a plurality of wafers can be processed simultaneously by a single supporting means, that is, a rack, so that the amount of plating solution used per wafer can be greatly reduced and the processing capacity can be reduced. Device size can be reduced.

【0008】また本発明によると、めっき用ラックをめ
っき槽内のめっき液に浸漬させた状態でめっき液をウエ
ーハに接触させるようにしているので、従来のようなめ
っき液の噴射供給を行なう必要がなく、従ってめっき槽
やめっき液供給機構などの装置要素の大幅な簡易化を図
ることができる。
Further, according to the present invention, the plating solution is brought into contact with the wafer while the plating rack is immersed in the plating solution in the plating tank. Therefore, it is possible to greatly simplify equipment elements such as a plating tank and a plating solution supply mechanism.

【0009】[0009]

【実施例】以下、本発明の一実施例について説明する。
図1〜図3に示すように、本実施例によるめっき用ラッ
ク1は、4本の支柱2、2、……に複数、この例では3
個の保持ユニット3(3a、3b、3c)を一定の間隔
で3段に支持させてなっている。
An embodiment of the present invention will be described below.
As shown in FIGS. 1 to 3, the plating rack 1 according to the present embodiment has a plurality of columns 4, 2,.
The three holding units 3 (3a, 3b, 3c) are supported in three steps at a constant interval.

【0010】各保持ユニット3は、保持対象のウエーハ
Wの周縁部を2〜3mm程度の幅で支持するための支持
面4fを有する環状の支持部材4にシール機構5を組み
合わせた構造になっている。
Each holding unit 3 has a structure in which a seal mechanism 5 is combined with an annular support member 4 having a support surface 4f for supporting the peripheral portion of the wafer W to be held with a width of about 2 to 3 mm. I have.

【0011】支持部材4の支持面4fにはカソード用の
電極端子6が複数箇所についてその先端を僅かに突出す
るようにされており、後述のようにしてウエーハWを支
持面4fに押し付けた際に各電極端子6の先端でウエー
ハWの表面のレジスト膜を破ってウエーハWに対するカ
ソードの通電が得られるようにされている。
On the support surface 4f of the support member 4, a plurality of electrode terminals 6 for the cathode are formed so that the tips thereof slightly protrude at a plurality of positions, and when the wafer W is pressed against the support surface 4f as described later. The resist film on the surface of the wafer W is broken at the tip of each electrode terminal 6 so that the cathode W can be energized to the wafer W.

【0012】その電極端子6には、図4に示すような電
極ユニットを用いることができる。この電極ユニット
は、全体として細長い板状とされた電極針6p、この電
極針6pを前方に向けて上向き傾斜の状態で嵌合装着さ
せるための装着孔7pを有すると共に電源接続用の螺合
孔7nを有する細長い角棒状の電極ブロック7、それに
電極ブロック7を密着的に収納する電極箱よりなってい
る。その電極箱は、箱本体8と蓋9及びパッキング10
よりなるもので、その蓋9には開口9wを有する突出部
9dが設けられ、電極ブロック7の装着孔7pに装着し
た電極針6pの先端を開口9wから斜め前方に露出させ
ることができるようにされている。
An electrode unit as shown in FIG. 4 can be used for the electrode terminal 6. This electrode unit has an electrode needle 6p formed in an elongated plate shape as a whole, a mounting hole 7p for fitting the electrode needle 6p in a state of being inclined forward and upward, and a screwing hole for connecting a power supply. The electrode block 7 has an elongated rectangular rod-shaped electrode block 7n and an electrode box for tightly accommodating the electrode block 7. The electrode box includes a box body 8, a lid 9 and a packing 10.
The lid 9 is provided with a projection 9d having an opening 9w so that the tip of the electrode needle 6p mounted in the mounting hole 7p of the electrode block 7 can be exposed obliquely forward from the opening 9w. Have been.

【0013】シール機構5は、支持部材4の外周サイズ
にほぼ相応する広がりサイズの凹部11rを有し、その
下端部を支持部材4に接続されたカバー部材11とこの
カバー部材11の凹部11r内に納められたエアーバッ
グ12よりなっており、カバー部材11に設けられた給
・排経路13を介して供給される圧縮気体でエアーバッ
グ12が膨張することにより(図は膨張状態を示してい
る)、支持部材4上のウエーハWの裏面を液密的に覆い
つつ且つウエーハWの周縁部を支持部材4の支持面4f
に押し付けこの周縁部に同じく液密性を与えるようにな
っている。
The seal mechanism 5 has a concave portion 11r having a spread size substantially corresponding to the outer peripheral size of the support member 4, and has a lower end portion connected to the cover member 11 connected to the support member 4 and a concave portion 11r of the cover member 11. The air bag 12 is inflated by compressed air supplied through a supply / discharge path 13 provided in the cover member 11 (the figure shows an inflated state). ), The periphery of the wafer W is covered by the supporting surface 4f of the supporting member 4 while covering the back surface of the wafer W on the supporting member 4 in a liquid-tight manner
To give liquid-tightness to the peripheral portion.

【0014】各保持ユニット3a、3b、3cに保持さ
れたウエーハWにはそれぞれに対応するアノード電極を
必要とするが、本実施例では、めっき用ラック1にこれ
らを予め組み込むようにしている。具体的には、最下段
のウエーハW用にはめっき用ラック1の下端部にアノー
ド電極14aを設け、上段の2枚のウエーハWについて
はそれぞれ隣接の保持ユニット3a、3bのカバー部材
11に固定したアノード電極14b、14cを対応させ
るようにしている。
Each wafer W held by each of the holding units 3a, 3b, 3c requires an anode electrode corresponding to the wafer W. In the present embodiment, these are incorporated in the plating rack 1 in advance. Specifically, an anode electrode 14a is provided at the lower end of the plating rack 1 for the lowermost wafer W, and the upper two wafers W are fixed to the cover members 11 of the adjacent holding units 3a and 3b, respectively. The corresponding anode electrodes 14b and 14c correspond to each other.

【0015】このようなめっき用ラック1を用いてのめ
っき処理は、図5に示すようにめっき用ラック1をめっ
き槽15内のめっき液Mに漬け、この状態でめっき液M
を適宜に攪拌しつつ進める。このめっき液Mの攪拌のた
めの機構は一般に知られている機構を用いることができ
るので、その説明及び図示は省略する。
As shown in FIG. 5, the plating process using the plating rack 1 is performed by immersing the plating rack 1 in a plating solution M in a plating tank 15 and then plating the plating solution M in this state.
With appropriate stirring. As a mechanism for stirring the plating solution M, a generally known mechanism can be used, and the description and illustration thereof are omitted.

【0016】[0016]

【発明の効果】以上説明したごとく本発明によると、一
個のラックで複数枚のウエーハを同時に処理できるの
で、ウエーハ1枚当たりのめっき液の使用量を大幅に節
減でき、また処理能力当たりの装置サイズを小さくでき
るし、さらに従来のようなめっき液の噴射的供給を行な
う必要がないので、めっき槽やめっき液供給機構などの
装置要素の大幅な簡易化を図ることができる。
As described above, according to the present invention, a single rack can simultaneously process a plurality of wafers, so that the amount of plating solution used per wafer can be greatly reduced, and the apparatus per processing capacity can be reduced. Since the size can be reduced and there is no need to perform the conventional jetting supply of the plating solution, the device elements such as the plating tank and the plating solution supply mechanism can be greatly simplified.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明によるめっき用ラックの一部断面を含む
側面図。
FIG. 1 is a side view including a partial cross section of a plating rack according to the present invention.

【図2】図1中の矢示A2 方向から見た平面図。Figure 2 is a plan view seen from the arrow A 2 direction in FIG. 1.

【図3】図1中の矢示A3 方向から見た底面図。Figure 3 is a bottom view viewed from arrow A 3 direction in FIG.

【図4】電極端子用の電極ユニットの分解斜視図。FIG. 4 is an exploded perspective view of an electrode unit for an electrode terminal.

【図5】本発明によるめっき用ラックを用いためっき処
理の状態を示す説明図。
FIG. 5 is an explanatory view showing a state of a plating process using a plating rack according to the present invention.

【図6】従来のめっき処理システムの構成図。FIG. 6 is a configuration diagram of a conventional plating system.

【符号の説明】[Explanation of symbols]

1 めっき用ラック 2 支柱 3 保持ユニット 4 支持部材 4f 支持面 5 シール機構 11 カバー部材 12 エアーバッグ 15 めっき槽 M めっき液 W ウエーハ DESCRIPTION OF SYMBOLS 1 Plating rack 2 Prop 3 Holding unit 4 Support member 4f Support surface 5 Seal mechanism 11 Cover member 12 Air bag 15 Plating tank M Plating solution W Wafer

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 めっき液にめっき対象面を選択的に接触
させる状態でウエーハを保持するめっき用ラックにおい
て、保持対象のウエーハの周縁部を一定の幅で支持する
ための支持面を有する環状の支持部材、及びこの支持部
材に支持されたウエーハの裏面をめっき液からシールす
るためのシール機構よりなる複数の保持ユニットをそれ
ぞれの支持部材の周縁を介して複数本の支柱により多段
状態に支持させてなることを特徴とするめっき用ラッ
ク。
1. A plating rack for holding a wafer in a state where a surface to be plated is selectively brought into contact with a plating solution, the ring having a support surface for supporting a peripheral portion of the wafer to be held with a constant width. The support member and a plurality of holding units including a sealing mechanism for sealing the back surface of the wafer supported by the support member from the plating solution are supported in a multi-stage state by a plurality of columns via the periphery of each support member. A plating rack comprising:
【請求項2】 シール機構は、圧縮気体の供給により膨
張するエアーバッグ、及びこのエアーバッグを支持部材
との間で挟持するカバー部材よりなり、圧縮気体の供給
で膨張させたエアーバッグにより支持部材上のウエーハ
の裏面を覆い且つウエーハの周縁部を支持部材の支持面
に押し付けるようになっている請求項1記載のめっき用
ラック。
2. A sealing mechanism comprising an air bag which is inflated by supply of a compressed gas, and a cover member which sandwiches the air bag between the air bag and a support member. 2. The plating rack according to claim 1, wherein the plating rack covers the back surface of the upper wafer and presses the peripheral edge of the wafer against the supporting surface of the supporting member.
【請求項3】 請求項1又は請求項2記載のめっき用ラ
ックを用いてウエーハにめっきを施すめっき方法であっ
て、各保持ユニットにウエーハを保持させためっき用ラ
ックをめっき槽内のめっき液に浸漬させ、この浸漬状態
で各保持ユニットのウエーハの表面にめっき液を流動的
に接触させてめっきを施すようにしてなるめっき方法。
3. A plating method for plating a wafer using the plating rack according to claim 1 or 2, wherein the plating rack in which each holding unit holds a wafer is a plating solution in a plating tank. A plating method in which a plating solution is fluidly brought into contact with the surface of the wafer of each holding unit in this immersed state to perform plating.
JP3614794A 1994-03-07 1994-03-07 Wafer plating rack and plating method using the same Expired - Lifetime JP3286064B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3614794A JP3286064B2 (en) 1994-03-07 1994-03-07 Wafer plating rack and plating method using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3614794A JP3286064B2 (en) 1994-03-07 1994-03-07 Wafer plating rack and plating method using the same

Publications (2)

Publication Number Publication Date
JPH07243098A JPH07243098A (en) 1995-09-19
JP3286064B2 true JP3286064B2 (en) 2002-05-27

Family

ID=12461686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3614794A Expired - Lifetime JP3286064B2 (en) 1994-03-07 1994-03-07 Wafer plating rack and plating method using the same

Country Status (1)

Country Link
JP (1) JP3286064B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000256896A (en) * 1999-03-11 2000-09-19 Ebara Corp Plating device
KR100423721B1 (en) * 2001-10-11 2004-03-22 한국전자통신연구원 Gilding apparatus having a negative polering
AT510593B1 (en) * 2010-12-15 2012-05-15 Markus Dipl Ing Dr Hacksteiner DEVICE FOR METALLIZING WAFERS

Also Published As

Publication number Publication date
JPH07243098A (en) 1995-09-19

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