JP3377917B2 - Package for storing semiconductor elements - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device housing package, such as a high-frequency semiconductor device operated at a high frequency represented by a GaAs device or the like, or an optical communication device. The present invention relates to a semiconductor element housing package for housing a semiconductor element. 2. Description of the Related Art A conventional semiconductor device housing package for housing various semiconductor devices such as various high-frequency semiconductor devices and optical communication devices is provided on a metal base on which the semiconductor device is mounted. An integrated metal frame for forming a space for accommodating a semiconductor element inside has been used. In such a package for housing a semiconductor element,
The metal base or the metal frame has a structure surrounding the terminal mounting portion having a metal layer extending from the inside to the outside of the metal frame on a side surface of the metal base or the metal frame. It has been possible to accurately prevent an electric signal flowing through the metal layer from leaking to the outside and to keep the characteristic impedance of the metal layer at a predetermined value. [0004] However, the conventional package for housing a semiconductor element suitable for a high frequency or the like requires complicated steps such as shaving and brazing of the package body and fitting of an input / output terminal portion in manufacturing the package. The cost was high. [0005] In view of the above, as a package for accommodating a semiconductor element which is already generally known, there is a package having a ceramic frame on a ceramic base having an input / output terminal portion. As a package for storing a high-frequency semiconductor element that can be reduced, for a high-frequency element in which a ceramic terminal provided with a metal layer for mounting input / output terminals is provided on a frame made of a metal base and ceramics integrally formed on the metal base. A package has been proposed (see Japanese Patent Publication No. Hei 8-17213). As a ceramic material constituting such a high-frequency element package, a conventionally used ceramic sintered body containing about 92% by weight of Al ₂ O ₃ is used. Have been. However, with Al ₂ O ₃ content of 92 weight percent of the ceramic sintered body, wherein at least the terminal mounting part and the input and output of the high frequency device package, even the insulating wall, or a ceramic substrate, etc. Is formed, the transmission loss of a signal when transmitting a signal is large in the transmission line provided in the high-frequency semiconductor element housing package, and particularly when the frequency of the signal transmitted through the terminal mounting portion is in a high-frequency region of 1 GHz or more. There has been a problem that a large transmission loss occurs and the signal transmission efficiency is significantly reduced. SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor device housing package for housing various semiconductor devices such as a high frequency semiconductor device and an optical communication device. An object of the present invention is to provide a semiconductor element housing package suitable for high frequency use, in which signal transmission loss is reduced, and in particular, signal transmission efficiency in a high frequency range in a terminal mounting member is maintained high. The inventors of the present invention have conducted intensive studies on the above-mentioned problems, and as a result, as a ceramic member constituting a terminal mounting member, 99.3 % by weight or more of Al has been used.
_It has been found that the use of a specific alumina-based sintered body containing ₂ O ₃ makes it possible to reduce the loss of a signal to be transmitted. That is, the package for housing a semiconductor element of the present invention comprises a metal base having a metal frame formed therein for forming a cavity for housing a semiconductor element, and a metal base or the metal base. The terminal mounting member comprises a wiring layer extending from the inside to the outside of the metal frame and a ceramic member electrically insulating the wiring layer from the metal frame and / or the metal base. The ceramic member contains 99.3% by weight or more of alumina (Al ₂ O ₃ ), the remainder being a sintered body composed of SiO ₂ and a rare earth oxide, and a signal having a frequency of 10 GHz or more is applied to the wiring layer. It is characterized by being transmitted. [0011] [action] for housing semiconductor chip package of the present invention, the wiring layer constituting the terminal mounting member as the ceramic member electrically insulated from the metal frame and / or metal substrate, Al ₂
By using an alumina-based sintered body containing 99.3% by weight or more of O ₃ and the balance being SiO ₂ and a rare earth oxide, the tan δ of the alumina-based sintered body is reduced to 92% by weight of the conventional one.
Can be reduced compared to the alumina sintered body of a degree, the loss of the transmission signal due to the dielectric, that is, the loss of the signal to be transmitted is reduced because the dielectric loss is reduced, especially the transmission loss of the signal in the high frequency region is increased. It becomes possible to reduce. Thus, the semiconductor device can be effectively used as a semiconductor device housing package for housing various semiconductor devices such as a semiconductor device used in a high frequency region and an optical communication device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A package for accommodating a semiconductor element according to the present invention has a metal base having a metal frame for forming a space for accommodating a semiconductor element inside thereof, and the metal frame. Alternatively, a wiring layer extending from the inside to the outside of the metal frame constituting the terminal mounting member is electrically connected to the metal frame and / or the metal base. The ceramic member that insulates the Al
_{It is made of} an alumina-based sintered body containing 99.3% by weight or more of ₂ O ₃ , and as a result, it is possible to reduce a loss of a transmission signal particularly in a high frequency region. In the package for accommodating a semiconductor element of the present invention, the ceramic member constituting the terminal mounting member is Al.
_When the content of ₂ O ₃ is less than 99.3% by weight, its dielectric loss, that is, tan δ, increases, and the transmission characteristics deteriorate. Specifically, for example, when the content of Al ₂ O ₃ is 9
When tan δ at 10 GHz is measured using a 2.0% by weight ceramic member, it becomes 10 × 10 ^−4, and this value decreases as the content of Al ₂ O ₃ increases,
When its content becomes 99.0% by weight, tan δ becomes 3 × 1
^0-4 or less, it is clear that Al ₂ O ₃
If the content is less than 99.0% by weight, tan δ is high, and the loss of the transmission signal to the dielectric, that is, the dielectric loss increases, resulting in a large transmission loss and poor characteristics. Therefore, the amount of Al ₂ O ₃ contained in the ceramic member of the present invention is determined by setting tan δ to 1.
Limited to 99.3% by weight or more to reduce to 5 × 10 ^-4 or less
Is done. Further, the composition other than Al ₂ O ₃ contained in the ceramic member of the present invention, that is, the balance of Al ₂ O ₃ is, as shown in Examples described later, SiO ₂ and rare earth acid.
And rare earth compounds are tan of Al ₂ O ₃
Has the effect of lowering δ. Further, as the wiring layer, tungsten (W), molybdenum (Mo), silver (Ag), copper (Cu)
And the like can be suitably applied, but W or Mo, which can be co-fired with Al ₂ O ₃ , is more preferable. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the package for accommodating a semiconductor device according to the present invention will be described below in detail with reference to the drawings. FIG. 1 is a perspective view of a terminal mounting member constituting a package for accommodating a semiconductor element of the present invention, FIG. 2 is a perspective view for explaining an assembling process of the package for accommodating a semiconductor element of the present invention, and FIG. It is a top view of the package for semiconductor device accommodation of the present invention. 1 to 3, reference numeral 1 denotes a terminal mounting member 5 comprising a wiring layer 6 and a ceramic member 7, a metal frame 3 for forming a cavity 2 for accommodating a semiconductor element, and a metal base 4. And a semiconductor device storage package comprising: In the semiconductor device housing package 1, a terminal mounting member for electrically insulating the wiring layer 6 extending from the inside to the outside of the metal frame 3 from the metal frame 3 and / or the metal base 4 with a ceramic member 7. 5, a ground layer 8 is provided on the upper and lower surfaces, and Mo sides for silver brazing are further provided on the side surfaces thereof.
-The Mn metal layer 9 is provided, and the terminal mounting member 5 is sandwiched between the metal frame 3 and the metal base 4 by silver brazing. Next, a description will be given of a procedure for preparing a transmission characteristic measurement sample for evaluating the semiconductor device housing package of the present invention. First, as a raw material powder, Al ₂ O ₃ powder having an average particle size of 2 μm was mixed with SiO ₂ , C
aO, MgO, Y ₂ O ₃ , and Yb ₂ O ₃ were weighed so that the composition of the alumina-based sintered body became a value shown in Table 1,
To each of the raw material powders, toluene is added as a solvent and mixed, and polyvinyl butyral, polyvinyl alcohol, or a polyacrylic resin is added to the mixture as an organic binder, and the mixture is mixed and dispersed by a ball mill to prepare a slurry. Was formed into a sheet by a known sheet forming method such as a doctor blade method to produce a green sheet. Next, using a metallized paste containing tungsten (W) or molybdenum (Mo) as a main component, a wiring layer 6 as a signal line and a ground layer 8 are formed by printing on the green sheet. Was cut into a predetermined size, the green sheets were stacked so as to sandwich the wiring layer 6, and then fired at a predetermined temperature in a reducing atmosphere containing hydrogen to produce a terminal mounting member 5. Thereafter, a Mo—Mn metal layer 9 is formed on the side surface of the obtained terminal mounting member 5, and C
The concave-shaped notch such that the terminal mounting member 5 is sandwiched between a metal substrate 4 made of a u-W alloy and a metal frame 3 made of a Cu-W alloy having a concave-shaped notch in a part thereof. Silver braze to the part. Subsequently, as shown in FIG.
99.0% by weight of Al ₂ O having a microstrip line 10 with an impedance of 50Ω formed inside
A ceramic plate containing ₃ was mounted and electrically connected to the wiring layer 6 to prepare an evaluation sample for measuring transmission characteristics. Using the thus-obtained evaluation sample for measuring transmission characteristics, a network analyzer measures a transmission signal having a signal frequency of 10 GHz and 60 GHz, the signal being input from the input terminal and transmitted to the output terminal,
The transmission loss was evaluated by calculating the S21 parameter (dB) of the power ratio. [Table 1] FIG. 4 shows a transmission characteristic measurement diagram of sample numbers 1 and 3 in Table 1 as a representative example. It should be noted that in the figure, the peak at which the signal frequency is observed around 43 GHz is due to resonance generated in the structure of the feedthrough, not due to the properties of the ceramic member, and is irrelevant to the evaluation of the present invention. As is clear from the results shown in Table 1, the sample No. 1 having a low Al ₂ O ₃ content, which is outside the scope of the present invention, has a large signal transmission loss. [0031] In contrast, none of the present invention have reduced transmission loss of the signals, to 2/3 or less as compared to the transmission loss sample No. 1 when the particular transmission of 60GHz signal, further Al ₂ O ₃ It can be seen that the transmission losses are reduced to half or less in Sample Nos. 3 to 6 in which the content is 99.3% by weight or more. As described above in detail, the package for accommodating a semiconductor device according to the present invention is a metal frame for forming a metal substrate on which a semiconductor device is mounted and a space for accommodating the metal substrate inside. And a terminal mounting member attached to the metal frame or the metal substrate, and electrically insulates a wiring layer extending from the inside to the outside of the metal frame from the metal frame and / or the metal substrate. Since the member contains at least 99.3% by weight of Al ₂ O ₃ and the remainder is formed of a sintered body composed of a sintered body composed of SiO ₂ and a rare earth oxide, signal transmission loss is reduced, In particular, it is possible to maintain high transmission efficiency of a signal in a high-frequency region, and it can be effectively used for a semiconductor element storage package on which various semiconductor elements such as a high-frequency semiconductor element and an optical communication element are mounted.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a terminal mounting member constituting a package for housing a semiconductor element of the present invention. FIG. 2 is a perspective view for explaining a process of assembling the package for housing a semiconductor element according to the present invention; FIG. 3 is a top view showing a semiconductor device housing package of the present invention. FIG. 4 is a transmission characteristic measurement diagram of a representative example in the embodiment. [Description of Signs] 1 Package for storing semiconductor element 2 Void 3 Metal frame 4 Metal substrate 5 Terminal mounting member 6 Wiring layer 7 Ceramic member

Continuation of the front page (56) References JP-A-5-152455 (JP, A) JP-A-5-304222 (JP, A) JP-A-6-3422853 (JP, A) JP-A-7-187793 (JP) JP-A-7-187866 (JP, A) JP-A-8-97321 (JP, A) JP-A-2-88242 (JP, U) (58) Fields investigated (Int. Cl. ⁷ , DB Name) H01L 23/02 C04B 35/111 H01L 23/08

Claims (1)

(57) [Claims 1] A metal base on which a metal frame for forming a space for accommodating a semiconductor element is mounted inside, and the metal base or the metal base is mounted on the metal base. And a wiring layer extending from inside to outside of the metal frame and electrically connecting the wiring layer to the metal frame and / or the metal base. A ceramic member containing 99.3% by weight or more of alumina (Al ₂ O ₃ ), with the balance being a sintered body composed of SiO ₂ and a rare earth oxide, Wherein a signal having a frequency of 10 GHz or higher is transmitted to the semiconductor device.