JP3435006B2 - Method for manufacturing package for housing semiconductor element - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor element housing package suitable for housing a semiconductor element that generates a large amount of heat during operation.

[0002]

2. Description of the Related Art In recent years, semiconductor integrated circuit devices have been rapidly increased in density and integration, resulting in a large amount of power consumption and a large amount of heat generated during operation. There is.

When the heat generated during operation of the semiconductor integrated circuit device is not sufficiently removed from the semiconductor integrated circuit device,
This may cause thermal breakdown or malfunction of the semiconductor integrated circuit element.

Therefore, in order to normally and stably operate a semiconductor integrated circuit device that has a high density and a high degree of integration and generates a large amount of heat during operation, it is possible to efficiently remove the heat generated during operation of the semiconductor integrated circuit device. Whether or not to do so has become a major issue.

Therefore, also in the semiconductor element housing package for housing such a semiconductor integrated circuit element, heat generated during operation of the semiconductor integrated circuit element housed therein is efficiently absorbed from the semiconductor integrated circuit element, and is good to the outside. Various measures have been taken to disperse it into the.

Conventionally, such a package for housing a semiconductor element is made of, for example, an electrically insulating material such as an aluminum oxide sintered body, and a mounting portion for housing a semiconductor integrated circuit element in the central portion of the upper surface and the periphery of this mounting portion. From the upper surface to the outer peripheral portion of the insulating base having metallized wiring, and the lower surface of the insulating base is attached to the mounting portion and a portion corresponding to the periphery of the mounting portion through a brazing material such as silver solder. There is a package for accommodating semiconductor elements, which includes a heat dissipation plate made of a good heat conductive material such as copper-tungsten or aluminum nitride, and a lid body joined to the upper surface of an insulating substrate.

According to this semiconductor element accommodating package, the semiconductor integrated circuit element is fixed to the bottom surface of the mounting portion of the insulating substrate with an adhesive, and each electrode of the semiconductor integrated circuit element is bonded to the metallized wiring of the insulating substrate with a bonding wire. And a semiconductor device as a product by hermetically accommodating a semiconductor integrated circuit element inside a container composed of the insulating base and the lid. Become. In this semiconductor device, the heat generated during the operation of the semiconductor integrated circuit element is absorbed by the insulating base, is transmitted to the heat radiating plate through the insulating base, and is radiated well to the outside atmosphere through the heat radiating plate. To be done.

The insulating substrate of such a package for accommodating semiconductor elements is manufactured by a ceramic green sheet laminating method. Specifically, a plurality of ceramic green sheets are prepared and some of these ceramic green sheets are conventionally used. A well-known punching method is used to punch through holes for forming the mounting portion, and thereafter, a metal paste to be a metallized wiring layer is printed and applied to these ceramic green sheets, and these ceramic green sheets are stacked on top of each other. It is pressure-bonded to form a green sheet laminated body having a mounting portion on the upper surface, and finally the green sheet laminated body is manufactured by firing at a high temperature.

Further, the heat dissipation plate is attached to the lower surface of the insulating base of the package for accommodating semiconductor elements by arranging a foil-shaped brazing material on the lower surface of the insulating base at a portion corresponding to the mounting portion and the periphery of the mounting portion. A heat radiating plate is placed so as to sandwich the brazing filler metal with the lower surface of the insulating substrate, and then these are heated in a reducing atmosphere to completely melt the brazing filler metal, and then the completely molten brazing filler metal is removed. It is performed by cooling and solidifying.

In this case, in the completely molten brazing material, a needle-shaped crystal skeleton made of a solid-phase brazing material is first formed in the brazing material in the process of cooling and solidification, and subsequently, a gap between the needle-shaped crystal skeletons is formed. The remaining liquid-phase brazing material is filled in, and when this is completely solidified, the heat sink is brazed to the insulating substrate.

[0011]

However, according to the conventional package for accommodating semiconductor elements, since the insulating base is manufactured by the ceramic green sheet laminating method, the ceramic green sheets to be the insulating base are laminated and pressure-bonded. When forming a green sheet laminated body with the green sheet laminated body, the portion exposed in the opening of the mounting portion provided in the green sheet laminated body is likely to be bent to the upper surface (opening) side due to the influence of pressure during lamination pressure bonding. As a result, the lower surface corresponding to the mounting portion of the insulating substrate tends to have a shape warped toward the upper surface side.

When the lower surface corresponding to the mounting portion of the insulating base is thus warped to the upper surface side, the lower surface of the insulating base is attached to the lower surface of the insulating base via the brazing material. If the heat radiating plate is arranged with the brazing filler metal sandwiched between the heat insulating plate and the heat radiating plate, the distance between the insulating base and the heat radiating plate becomes wide at the portion corresponding to the mounting portion of the insulating base and narrow at the portion corresponding to the periphery of the mounting portion.

Therefore, when the brazing material sandwiched between the insulating base and the heat sink is completely melted and then cooled and solidified,
In the brazing filler metal in the process of cooling and solidification, the gap between the insulating base and the heat dissipation plate is narrow in the area corresponding to the periphery of the mounting part, and cooling of the brazing filler metal starts from the outer peripheral side of the insulating base and the heat dissipation member. A needle-shaped crystal skeleton made of a compatibilizing material is formed before the part corresponding to the mounting part of the insulating substrate, and a large amount of residual liquid phase brazing material is formed in the crystal skeleton formed at the part corresponding to the periphery of this mounting part. Therefore, the crystal skeleton is not sufficiently formed in the brazing filler metal from the insulating base to the heat dissipation plate at the portion corresponding to the mounting portion of the insulating base, and the liquid phase brazing filler filling the crystal skeleton is insufficient, resulting in a large amount of voids. There is a problem that (cavities) are formed. When a large number of voids are formed in the brazing filler metal in the portion corresponding to the mounting portion of the insulating base, the heat generated during operation of the semiconductor integrated circuit element fixed to the bottom surface of the mounting portion of the insulating base is radiated. As a result, the heat cannot be well transferred to the board, and as a result, the heat generated during the operation of the semiconductor integrated circuit device cannot be sufficiently dissipated into the atmosphere through the heat dissipation plate.

The present invention has been devised in view of the above circumstances, and an object thereof is to generate a void between the insulating base and the heat sink when brazing the heat sink to the insulating base. For semiconductor storage, the heat generated during operation of the semiconductor integrated circuit element accommodated therein can be satisfactorily transferred from the insulating base to the heat sink to operate the semiconductor integrated circuit element with a large amount of heat normally and stably. It is an object of the present invention to provide a method for manufacturing a package for accommodating a semiconductor device that can obtain a package.

[0015]

According to the method of manufacturing a package for accommodating a semiconductor element of the present invention, the following steps (1) and (2) are performed on the lower surface of an insulating base having a mounting portion for mounting a semiconductor element on the upper surface. The method further includes the step of attaching a heat dissipation plate having a size corresponding to the mounting portion and its periphery. (1) An auxiliary brazing material having a size substantially corresponding to the mounting portion on the lower surface of the insulating base, a main brazing material having a melting point lower than that of the auxiliary brazing material having a size substantially corresponding to the heat dissipation plate, and a heat dissipation plate. Step of sequentially arranging. (2) The main brazing filler metal and the sub brazing filler metal are heated to completely melt the main brazing filler metal and the sub brazing filler metal half-melted, so that the main brazing filler metal is on the lower surface of the insulating base and corresponding to the mounting portion. And the auxiliary brazing material, between the heat dissipation plate and the portion of the lower surface of the insulating substrate corresponding to the peripheral portion of the mounting portion, and between the auxiliary brazing material and the heat dissipation plate. A step of brazing and attaching the heat dissipation plate to the lower surface of the insulating base with a main brazing material having a sub-brazing material embedded in a portion corresponding to the mounting portion on the lower surface of the insulating base.

In the method of manufacturing a package for housing a semiconductor element of the present invention, in the above manufacturing method, the main brazing material is a eutectic brazing material and the sub-brazing material is a non-eutectic brazing material. It is a feature.

According to the method of manufacturing a package for accommodating a semiconductor element of the present invention, the auxiliary brazing material having a relatively high melting point and having a size substantially corresponding to the mounting portion is provided on the lower surface of the insulating substrate, and the size substantially corresponding to the heat radiating plate. The main brazing material having a relatively low melting point, which has a lower melting point than that of the sub brazing material, is placed, and the sub brazing material and the main brazing material are sandwiched between the insulating base and the heat radiation of a size corresponding to the mounting portion and its periphery. A plate is placed, and then the sub-brazing material and the main brazing material are heated to completely melt the main brazing material and the sub-brazing material is semi-molten, and the main brazing material corresponds to the mounting portion on the lower surface of the insulating base. Wet and spread between the part and the auxiliary brazing material, between the part corresponding to the mounting base peripheral part on the lower surface of the insulating base, and between the auxiliary brazing material and the heat dissipation plate, and then cool and solidify these. , A sub-solder on the bottom surface of the insulating base that corresponds to the mounting part The radiator plate since it is attached brazing to the lower surface of the insulating substrate by mainly brazing material but embedded therein,
Even if the lower surface of the insulating base body is warped in a portion corresponding to the mounting portion, the heat sink plate is brazed to the insulating base body without generating voids in the brazing material between the insulating base body and the heat sink plate. Can be attached.

[0018]

DETAILED DESCRIPTION OF THE INVENTION The present invention will now be described in detail with reference to the accompanying drawings. 1 (a) and 1 (b) are cross-sectional views of respective steps showing an example of an embodiment of a method for manufacturing a semiconductor element housing package of the present invention.

In these figures, 1 is an insulating substrate, 9 is a heat radiating plate, 21 is a sub brazing material, and 22 is a main brazing material.

First, as shown in FIG. 1 (a), a mounting portion 1a for mounting a semiconductor integrated circuit element is formed on the upper surface, and the mounting portion 1a and a portion substantially corresponding to the periphery of the mounting portion 1a are formed on the lower surface. The insulating base 1 on which the metallized metal layer 8 is formed, the mounting portion 1a of the insulating base 1 and the heat dissipation plate 9 having a size substantially corresponding to the periphery of the mounting portion 1a, and the mounting portion 1 of the insulating base 1.
The foil-shaped auxiliary brazing material 21 having a relatively high melting point having a size substantially corresponding to a and the auxiliary brazing material 21 having a relatively low melting point having a lower melting point than the auxiliary brazing material 21 having a size substantially corresponding to the heat dissipation plate 9. Prepare brazing filler metal 22.

The auxiliary brazing material 21 is a non-eutectic brazing material composed of, for example, 85% by weight of silver-15% by weight of copper, and the main brazing material 22 is a eutectic composed of, for example, 72% by weight of silver-28% by weight of copper. A brazing material is used.

When a non-eutectic brazing material is used as the sub brazing material 21 and a eutectic brazing material is used as the main brazing material 22, the main brazing material 22 is completely melted and the sub brazing material 21 is melted, as will be described later. When semi-melting, the auxiliary brazing material 21 and the main brazing material 22
Is heated to a temperature not higher than the melting point of the auxiliary brazing filler metal 21 and not lower than the melting point of the main brazing filler metal 22, the main brazing filler metal 22 can be completely melted and the auxiliary brazing filler metal 21 can be semi-melted easily. Therefore, it is preferable to use a non-eutectic brazing material as the sub brazing material 21 and a eutectic brazing material as the main brazing material 22.

Next, as shown in FIG. 1B, the insulating substrate 1
Sub-brazing material 21 on the lower surface of the mounting portion 1a corresponding to the mounting portion 1a, and the main brazing material on the mounting portion 1a and the portion corresponding to the mounting portion 1a periphery.
22 are arranged, and these auxiliary brazing filler metal 21 and main brazing filler metal
The heat radiating plate 9 is arranged so as to be sandwiched by 22 and the insulating substrate 1. The sub brazing material 21 and the main brazing material 22 may be arranged in reverse order.

Next, the insulating base 1, the heat dissipation plate 9, the auxiliary brazing material 21 and the main brazing material 22 are heated to a temperature of about 835 ° C. in a reducing atmosphere to completely melt the main brazing material 22 and the auxiliary brazing material. The material 21 is semi-melted.

At this time, since the completely melted main brazing filler metal 22 has high fluidity, it is between the portion corresponding to the mounting portion 1a and the sub brazing filler metal 21 on the lower surface of the insulating base 1 and on the lower surface of the insulating base 1. Between the heat dissipation plate 9 and a portion corresponding to the mounting portion 1a peripheral portion,
The sub-brazing filler metal 21 and the heat dissipation plate 9 wet and spread, while the semi-molten sub-brazing filler metal 21 has a mixture of a liquid phase and a solid phase and has low fluidity. Insulating substrate 1
Stays between the heat dissipation plate 9 and the portion corresponding to the mounting portion 1a on the lower surface of the.

Finally, these are cooled to solidify the completely brazed main brazing filler metal 22 and the semi-molten sub-brazing filler metal 21 so that the main brazing filler metal 22 in which the sub-brazing filler metal 21 is embedded is insulated. The heat radiation plate 9 is brazed and attached to the lower surface of the.

At this time, a crystal skeleton is formed in the semi-molten auxiliary brazing filler metal 21 before the completely molten main brazing filler metal 22.
Since the residual brazing material in the sub-brazing material 21 is captured by this crystal skeleton and stays in the portion corresponding to the mounting portion 1a of the insulating base 1, the brazing material in the portion corresponding to the mounting portion 1a of the insulating base 1 No void will occur.

An example of the semiconductor element housing package thus obtained by the method for manufacturing a semiconductor element housing package of the present invention will be described with reference to FIG.

FIG. 2 is a sectional view showing an example of a semiconductor device using the semiconductor element housing package obtained by manufacturing the semiconductor element housing package of the present invention. In FIG. 2, 1 is an insulating substrate and 2 is a lid. It is the body. A container 3 for accommodating the semiconductor element 4 is mainly composed of the insulating base 1 and the lid 2.

The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, or a glass ceramic sintered body. A cavity is formed on the bottom surface of the mounting portion 1a for accommodating the semiconductor integrated circuit element 4, and the semiconductor integrated circuit element 4 is provided on the bottom surface of the mounting portion 1a with an adhesive such as a brazing material, glass, or resin. And glued and fixed.

When the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, a suitable organic binder or solvent is added to and mixed with a raw material powder of aluminum oxide, silicon oxide, calcium oxide, magnesium oxide or the like to form a sludge form. Along with this, a plurality of ceramic green sheets are obtained by forming this into a sheet shape by adopting the conventionally well-known doctor blade method, etc., and then appropriately punching each of these ceramic green sheets and vertically It is manufactured by stacking and firing at high temperature (about 1600 ℃).

A plurality of metallized wirings 5 are formed on the insulating substrate 1 from the periphery of the mounting portion 1a to the outer peripheral portion of the upper surface. The metallized wirings 5 are formed on the periphery of the mounting portion 1a of the semiconductor integrated circuit element 4. Each electrode is electrically connected via a bonding wire 6, and an external lead pin 7 connected to an external electric circuit is attached to a portion led to the outer peripheral portion of the upper surface of the insulating substrate 1.

The metallized wiring layer 5 is made of a metal powder sintered body of tungsten, molybdenum, molybdenum-manganese, copper, silver, silver-palladium, or the like. The insulating paste 1 is mounted by applying the metal paste obtained by the addition and mixing to a ceramic green sheet to be the insulating substrate 1 by applying a known pattern by a screen printing method in a predetermined pattern and baking the same together with the ceramic green sheet. It is adhered and formed so as to extend from the periphery of the portion 1a to the outer peripheral portion of the upper surface.

A metallized metal layer 8 is formed on the lower surface of the insulating substrate 1 at a portion substantially corresponding to the mounting portion 1a and the periphery of the mounting portion 1a. The metallized metal layer 8 is provided with a heat dissipation plate 9. , The main brazing material in which the sub-brazing material 10a is embedded
It is brazed through 10.

The metallized metal layer 8 deposited on the lower surface of the insulating substrate 1 is made of tungsten, molybdenum, copper, silver, or the like.
It is made of a sintered metal powder of palladium or the like and acts as a base metal for attaching the heat dissipation plate 9 to the insulating substrate 1 via the main brazing material 10. For example, when it is made of tungsten, an organic binder suitable for tungsten powder is used. The lower surface of the insulating substrate 1 is obtained by printing and applying a metal paste obtained by adding and mixing a solvent and a solvent to a ceramic green sheet to be the insulating substrate 1 in a predetermined pattern by a conventionally known screen printing method, and firing the ceramic green sheet together with the ceramic green sheet. Then, it is adhered and formed on the mounting portion 1a and a portion substantially corresponding to the periphery of the mounting portion 1a.

The heat radiating plate 9 brazed to the metallized metal layer 8 via the main brazing material 10 is made of copper or copper-tungsten.
Made of a good heat conductive material such as aluminum nitride sintered body,
The heat transferred to the heat dissipation plate 9 through the insulating base 1 is effectively dissipated to the outside atmosphere, and the heat generated when the semiconductor integrated circuit element 4 operates is the insulating base 1 and the auxiliary brazing material 10.
The a is transmitted to the heat radiating plate 9 via the main brazing material 10 in which it is buried, and is satisfactorily dissipated to the outside atmosphere via the heat radiating plate 9.

Here, the main brazing material 10 to which the heat dissipation plate 9 is attached to the metallized metal layer 8 is made of a brazing material having a relatively low melting point such as a silver-copper eutectic brazing material, A sub-brazing material 10a having a relatively high melting point, which has a higher melting point than the surrounding main brazing material 10, is embedded in a portion corresponding to the mounting portion 1a.

The main brazing material 10 having the heat dissipation plate 9 attached to the metallized metal layer 8 has a sub-brazing material 10a having a higher melting point than the surrounding main brazing material 10 at a portion corresponding to the mounting portion 1a of the insulating base 1. Since it is embedded, the main brazing material 10 and the sub-brazing material when attaching the insulating substrate 1 and the heat dissipation plate 9 via the main brazing material 10.
When 10a is melted and solidified, a crystal skeleton is formed first in the sub brazing material 10a, and as a result, the sub brazing material 10a is formed in this crystal skeleton.
The remaining brazing material in a is captured and the mounting portion 1 of the insulating substrate 1
Since it stays in the part corresponding to a, the insulating base 1
A void is not formed in the portion corresponding to the mounting portion 1a of the semiconductor integrated circuit element 4, and therefore the heat generated by the semiconductor integrated circuit element 4 is absorbed by the auxiliary brazing material 10a.
Can be satisfactorily transmitted to the heat dissipation plate 9 through the main brazing filler metal 10 in which is embedded.

Note that, for example, the auxiliary brazing material 10a having a relatively high melting point
A non-eutectic brazing filler metal (melting point 840 ° C) consisting of 85% by weight of silver and 15% by weight of copper is used as the main brazing filler metal around the sub brazing filler metal 10a.
When a eutectic brazing filler metal (melting point 780 ° C.) composed of 72% by weight of silver and 28% by weight of copper is used as 10, when the main brazing filler metal 10 is melted, the main brazing filler metal 10 has a melting point higher than that of the eutectic brazing filler metal Brazing material
By melting the eutectic brazing filler metal completely at a temperature equal to or lower than the melting point of 10a and making the sub-brazing filler metal 10a difficult to flow in a mixed state of liquid phase and solid phase, the sub-brazing filler metal 10a is insulated. It becomes easy to retain the base 1 at a portion corresponding to the mounting portion 1a. Therefore, the auxiliary brazing material
10a is a non-eutectic brazing filler metal having a relatively high melting point.
It is preferable that the main brazing filler metal 10 around a is formed of a eutectic brazing filler metal having a relatively low melting point.

The auxiliary brazing material 10 embedded in the main brazing material 10
The amount and shape of a may be appropriately determined depending on the shape of the insulating substrate 1 and the magnitude of warpage.

Thus, according to the semiconductor element storage package obtained by the method for manufacturing a semiconductor element storage package of the present invention, the semiconductor integrated circuit element 4 is provided on the bottom surface of the mounting portion 1a of the insulating substrate 1 with a brazing material, glass, resin or the like. The electrodes of the semiconductor integrated circuit element 4 are electrically connected to the metallized wiring 5 via the bonding wires 6, and then the lid 2 is soldered on the upper surface of the insulating base 1. By joining through a sealing material such as resin,
A semiconductor device in which the semiconductor integrated circuit element 4 is hermetically housed is obtained.

It should be noted that the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the present invention. For example, in the example of the above-described embodiment, the main brazing filler metal 22 is arranged on the lower surface of the insulating base 1 at the mounting portion 1a and the portion corresponding to the periphery of the mounting portion 1a. You may arrange | position only in the site | part corresponding to the mounting part 1a periphery.

[0043]

According to the method of manufacturing a package for accommodating semiconductor elements of the present invention, the lower surface of the insulating base having the mounting portion on the upper surface is substantially compatible with the auxiliary brazing material and the heat dissipation plate having a size substantially corresponding to the mounting portion. The main brazing filler metal, which has a lower melting point than the auxiliary brazing filler metal, between the insulating base and a heat radiating plate of the corresponding size around the mounting part, and then the main brazing filler metal completely. After melting and semi-melting the auxiliary brazing material, the completely molten main brazing material and the semi-molten auxiliary brazing material are cooled and solidified. Between the part corresponding to the mounting part and the high melting point brazing filler metal on the lower surface of the, and between the part corresponding to the mounting part peripheral part on the lower surface of the insulating base and the heat sink, and between the high melting point brazing filler metal and the heat dissipation plate. On the other hand, the semi-molten secondary brazing filler metal has poor fluidity. In Ino, remain between the site where most part corresponds to the mounting portion on the lower surface of the insulating substrate and the heat radiating plate. In the process of cooling and solidifying the completely melted main brazing filler metal and the semi-molten auxiliary brazing filler metal, a crystal skeleton is formed in the semi-molten auxiliary brazing filler metal before the completely melted main brazing filler metal. Since the residual brazing material in the auxiliary brazing material is captured by this crystal skeleton and stays in the portion corresponding to the mounting portion of the insulating base, a void is generated in the brazing material in the portion corresponding to the mounting portion of the insulating base. Things will disappear.

Further, in the semiconductor element housing package obtained by the method for manufacturing a semiconductor element housing package according to the present invention, the brazing material for attaching the heat dissipation plate to the insulating base is, for example, the mounting portion of the insulating base. Since a sub-brazing material having a relatively high melting point, which has a higher melting point than the surrounding main brazing material, is embedded in the portion corresponding to the above, the brazing material is used when attaching the insulating substrate and the heat sink through the brazing material. When melted and solidified, the sub-brazing material forms a crystal skeleton first.As a result, the residual brazing material in the sub-brazing material is captured by the crystal skeleton and stays in the part corresponding to the mounting part of the insulating substrate. , Voids are not formed in the portion of the brazing material corresponding to the mounting portion of the insulating substrate, and therefore the heat generated by the semiconductor integrated circuit element is satisfactorily transferred to the heat sink through the brazing material to be dissipated and removed. It becomes possible.

Therefore, according to the present invention, when the heat dissipation plate is brazed to the insulating base, no void is generated between the insulating base and the heat dissipation plate, and the semiconductor integrated circuit element housed inside is formed. A method of manufacturing a package for accommodating a semiconductor device, in which the heat generated during operation of the semiconductor device can be satisfactorily transmitted from the insulating base to the heat dissipation plate and a semiconductor integrated circuit device having a large amount of heat can be operated normally and stably. Could be provided.

[Brief description of drawings]

FIG. 1A and FIG. 1B are cross-sectional views for each step for explaining an example of an embodiment of a method for manufacturing a package for housing a semiconductor element of the present invention.

FIG. 2 is a cross-sectional view showing an example of a semiconductor device using a semiconductor element housing package obtained by the method for manufacturing a semiconductor element housing package of the present invention.

[Explanation of symbols]

1 ... Insulating substrate 1a: Mounting part 2 ... Lid 4 ・ ・ Semiconductor integrated circuit device 9 ... Heat sink 10, 22 ... Main brazing material 10a, 21 ... Secondary brazing material

Claims (2)

(57) [Claims] 1. A size corresponding to the mounting portion and its periphery by the following steps (1) and (2) on the lower surface of an insulating substrate having a mounting portion for mounting a semiconductor element on the upper surface.
A method of manufacturing a package for accommodating a semiconductor element, characterized in that it includes a step of attaching a heat sink of (1) A size substantially corresponding to the mounting portion on the lower surface of the insulating base.
And the sub-brazing material, prior to substantially correspond to the size on the heat dissipation plate
Serial and a lower melting point mainly brazing material than the sub brazing material, a step of sequentially arranging the heat radiating plate. (2) The main brazing filler metal and the sub brazing filler metal are heated to completely melt the main brazing filler metal and semi-melt the sub brazing filler metal ,
A portion of the brazing material corresponding to the mounting portion on the lower surface of the insulating base.
Between the base and the auxiliary brazing material, and on the lower surface of the insulating base,
And between the the portion and the heat radiating plate that corresponds to the mounting portion peripheral Deputy
Cooled after wetting and spreading between the brazing material and the heat radiating plate, the portion corresponding to the mounting portion on the lower surface of the insulating base <br/> by sub brazing material mainly brazing material embedded therein Brazing and attaching the heat dissipation plate to the lower surface of the insulating substrate. 2. The method of manufacturing a package for housing a semiconductor device according to claim 1, wherein the main brazing material is a eutectic brazing material and the sub-brazing material is a non-eutectic brazing material.