JP3435583B2 - Electric field sensor - Google Patents
Electric field sensorInfo
- Publication number
- JP3435583B2 JP3435583B2 JP17375994A JP17375994A JP3435583B2 JP 3435583 B2 JP3435583 B2 JP 3435583B2 JP 17375994 A JP17375994 A JP 17375994A JP 17375994 A JP17375994 A JP 17375994A JP 3435583 B2 JP3435583 B2 JP 3435583B2
- Authority
- JP
- Japan
- Prior art keywords
- electric field
- optical
- phase shift
- field sensor
- optical waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005684 electric field Effects 0.000 title claims description 77
- 230000003287 optical effect Effects 0.000 claims description 115
- 230000010363 phase shift Effects 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 12
- 230000000694 effects Effects 0.000 claims description 10
- 230000005693 optoelectronics Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 12
- 238000005259 measurement Methods 0.000 description 9
- 239000013307 optical fiber Substances 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 230000001902 propagating effect Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920001651 Cyanoacrylate Polymers 0.000 description 3
- MWCLLHOVUTZFKS-UHFFFAOYSA-N Methyl cyanoacrylate Chemical compound COC(=O)C(=C)C#N MWCLLHOVUTZFKS-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Landscapes
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、基板上に光導波路が形
成された電界センサ、光変調器等の光導波路デバイスに
関し、空間の電界強度を高精度に測定する機能を有する
電界センサ、および光導波路内を伝播する導波光を変調
する機能を有する光変調器に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electric field sensor having an optical wave guide formed on a substrate, an optical wave guide device such as an optical modulator, and an electric field sensor having a function of measuring the electric field strength in space with high accuracy, and The present invention relates to an optical modulator having a function of modulating guided light propagating in an optical waveguide.
【０００２】[0002]
【従来の技術】近年、普及が著しいインバーターエアコ
ン等の、電磁妨害波によるコンピュータシステム等の誤
動作が問題となってきている。これらのＥＭＣ（Electr
omagnetic Compatibility）試験および対策を行うため
に、装置から放射され、または装置に侵入する電磁波の
電界強度を正確に測定する必要がある。特に、最近で
は、電磁パルス強度の時間領域における測定および放射
電磁界を精度良く求めるための測定が重要となってい
る。2. Description of the Related Art In recent years, malfunctions of computer systems and the like due to electromagnetic interference waves such as inverter air conditioners, which have become very popular, have become a problem. These EMC (Electr
In order to perform omagnetic compatibility) tests and countermeasures, it is necessary to accurately measure the electric field strength of electromagnetic waves emitted from or entering a device. In particular, recently, the measurement of the electromagnetic pulse intensity in the time domain and the measurement for accurately obtaining the radiated electromagnetic field have become important.
【０００３】他方、光通信、光情報処理システムの分野
における技術の実用化に向けて、光波の変調、光路の切
り換え等を行なう光変調デバイスのより小型化、高速
化、高機能化が必要とされている。On the other hand, in order to put the technology in the fields of optical communication and optical information processing systems into practical use, it is necessary to make the optical modulation device for modulating light waves, switching optical paths, etc. smaller, faster, and more sophisticated. Has been done.
【０００４】このような背景のもとに、光導波路デバイ
スによるセンサヘッドとレベル測定装置との間を光ファ
イバで結ぶ電界センサが検討されている（特開平５−２
０４３）。図１１に示すように、センサ本体の外部から
光ファイバにより無変調で光信号を入力し（入力光
７）、この入力光をセンサ内部の光変調器により、セン
サ導体棒９を経て変調用電極６に導かれた電界レベルに
応じて変調し、光ファイバによりレベル測定装置に伝送
する（出力光８）。光ファイバによる伝送であるため
に、伝送過程において環境とのノイズの授受がないこと
が大きな特徴である。光導波路デバイスは、また光変調
器としての応用が注目されている。Under such a background, an electric field sensor in which a sensor head formed of an optical waveguide device and a level measuring device are connected by an optical fiber has been studied (Japanese Patent Application Laid-Open No. 5-2.
043). As shown in FIG. 11, an optical signal is input from the outside of the sensor main body through an optical fiber without any modulation (input light 7), and this input light is transmitted through the sensor conductor rod 9 to the modulation electrode by the optical modulator inside the sensor. It is modulated according to the electric field level guided to 6 and transmitted to the level measuring device through the optical fiber (output light 8). Since the transmission is performed by using an optical fiber, it is a major feature that no noise is exchanged with the environment in the transmission process. The application of the optical waveguide device as an optical modulator is also drawing attention.
【０００５】この光導波路デバイスには、ニオブ酸リチ
ウム（ＬｉＮｂＯ3）（以下、ＬＮという）等の電気光
学効果を有する結晶基板が多く使われる。光変調器は、
基板表面に形成した光導波路に電界を印加し屈折率を変
化させることにより、該導波路中を進行する光信号の強
度変調や位相変調を行うもので、小型、高効率、高速と
いう特徴がある。For this optical waveguide device, a crystal substrate having an electro-optical effect such as lithium niobate (LiNbO 3 ) (hereinafter referred to as LN) is often used. Light modulator
By applying an electric field to the optical waveguide formed on the surface of the substrate to change the refractive index, the intensity and phase of the optical signal traveling in the waveguide are modulated, which is characterized by small size, high efficiency, and high speed. .
【０００６】光変調器には、方向性結合器型、反射型、
分岐干渉型等の種類がある。図１２に従来の分岐干渉型
光変調器の構成を示す。入力光導波路２への入力光７
は、分岐によりエネルギーが分割され、位相シフト光導
波路３および４を通過後、出力光導波路５で合流する。
この時、位相シフト光導波路を伝播した光が同位相で合
流すれば、損失は小さく、出力光８は最大の光量となる
が、位相シフト光導波路を通過した光が互いに逆位相
（位相差が１８０゜）となる場合は、合流部分で干渉に
より大きな損失を生じ、出力光の光量は最小となる。変
調用電極６への印加電圧の大きさによって、電極近傍の
光導波路の屈折率が電気光学効果によって変化し、そこ
を通過する光の位相が変化し、印加電圧に対応した出力
をもつ出力光８に変調される。The optical modulator includes a directional coupler type, a reflection type,
There are types such as branch interference type. FIG. 12 shows the configuration of a conventional branching interference type optical modulator. Input light 7 to the input optical waveguide 2
Energy is split by branching, passes through the phase shift optical waveguides 3 and 4, and then joins at the output optical waveguide 5.
At this time, if the light propagating through the phase shift optical waveguide joins in the same phase, the loss is small and the output light 8 has the maximum light amount, but the light passing through the phase shift optical waveguide has opposite phases (phase difference is 180 °), a large loss occurs due to interference at the merging portion, and the amount of output light becomes a minimum. Depending on the magnitude of the voltage applied to the modulation electrode 6, the refractive index of the optical waveguide near the electrode changes due to the electro-optic effect, the phase of the light passing therethrough changes, and the output light having an output corresponding to the applied voltage is changed. Modulated to 8.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、前述し
た従来の光導波路型の電界センサは、センサ棒および変
調用電極が金属であるため、電界測定のために使用する
センサ自体が電界分布を乱してしまうという皮肉な現象
を引き起こすこととなる。また、特に高電界の検出の場
合には、わずか数ミクロン〜数十ミクロンの間隔の二つ
の電極に電界を印加することによって誘起された電荷の
放電のために、電極の破損を招きやすいという問題を有
する。更には、印加電界強度と変調された出力光の強度
との関係を製作段階で任意に設定することは実現されて
いない。However, in the above-mentioned conventional optical waveguide type electric field sensor, since the sensor rod and the modulation electrode are made of metal, the sensor itself used for measuring the electric field disturbs the electric field distribution. It causes an ironic phenomenon of being lost. In addition, particularly in the case of detecting a high electric field, there is a problem that the electrodes are easily damaged due to discharge of electric charges induced by applying an electric field to two electrodes with an interval of only several microns to several tens of microns. Have. Furthermore, it has not been realized to arbitrarily set the relationship between the applied electric field intensity and the intensity of the modulated output light at the manufacturing stage.
【０００８】分岐干渉型光変調器の変調用電極への印加
電圧と光出力との関係の１例を図１３に示す。この図で
は、光出力を規格化して示している。光出力は、印加電
圧に対して周期的に最大値と最小値をとる。一般に、光
変調器は、印加電圧０で光出力が最大値の５０％となる
ようなバイアス位置（動作点）で使用するのが一般的で
ある。通常、印加電圧０で光出力が５０％となるように
再現性良く光変調器を作製することは困難であるため、
バイアス電圧を印加することによって、光出力が５０％
となるように調整する。従って、変調用電極に印加され
る変調用電圧は、バイアス電圧と、変調さるべき高周波
信号を重畳したものとなる。しかし、導波路型光変調器
にＤＣ電圧成分が長時間印加された場合、結晶基板や基
板とバッファー層の界面、バッファー層と電極の界面等
に電荷が蓄積して、光導波路中に印加される電界強度が
経時的に変化するＤＣドリフト現象が生ずる。FIG. 13 shows an example of the relationship between the voltage applied to the modulation electrode of the branch interferometric optical modulator and the optical output. In this figure, the optical output is shown as standardized. The optical output periodically has a maximum value and a minimum value with respect to the applied voltage. Generally, the optical modulator is generally used at a bias position (operating point) such that the optical output becomes 50% of the maximum value when the applied voltage is 0. Usually, it is difficult to manufacture an optical modulator with good reproducibility so that the optical output becomes 50% when the applied voltage is 0.
50% light output by applying bias voltage
Adjust so that Therefore, the modulation voltage applied to the modulation electrode is a combination of the bias voltage and the high frequency signal to be modulated. However, when a DC voltage component is applied to the waveguide type optical modulator for a long time, charges are accumulated in the crystal substrate, the interface between the substrate and the buffer layer, the interface between the buffer layer and the electrode, etc., and are applied to the optical waveguide. A DC drift phenomenon occurs in which the strength of the electric field generated changes with time.
【０００９】本発明は、上記の問題を解決する手段を提
供する。すなわち、電界センサ自体の存在が電界分布の
乱れを生じないようにして、真の電界の測定を可能に
し、放電等の支障がなく高電界の測定をも可能とし、か
つ、電界強度に応じて変調された透過光の周期的に変化
する光出力曲線上の動作点を任意に調整することができ
る電界センサを実現する。The present invention provides means for solving the above problems. In other words, the presence of the electric field sensor itself does not disturb the electric field distribution, enabling the measurement of the true electric field, enabling the measurement of high electric fields without problems such as discharge, and depending on the electric field strength. An electric field sensor capable of arbitrarily adjusting an operating point on a periodically changing light output curve of modulated transmitted light is realized.
【００１０】[0010]
【００１１】[0011]
【課題を解決するための手段】本発明の一態様によれ
ば、基板上に形成された入力光導波路と、該入力光導波
路より分岐した二つの位相シフト光導波路と、該二つの
位相シフト光導波路が合流する出力光導波路とからなる
電気光学効果を用いる電界センサにおいて、前記二つの
位相シフト光導波路の光学距離を互いに異ならせ、前記
出力光導波路から直接に電界変化が得られるようにした
ことを特徴とする電界センサが得られる。 According to one aspect of the present invention.
For example, the input optical waveguide formed on the substrate and the input optical waveguide
Two phase-shifted optical waveguides branched from the
Consists of an output optical waveguide where the phase shift optical waveguide merges
In the electric field sensor using the electro-optic effect, the two
The optical distances of the phase shift optical waveguides are different from each other,
The electric field change can be obtained directly from the output optical waveguide.
An electric field sensor characterized by the above is obtained .
【００１２】本発明の他の態様によれば、基板上に形成
された入力光導波路と、該入力光導波路より分岐した二
つの位相シフト光導波路と、前記二つの位相シフト光導
波路の分岐した側と反対側に接続して設けられた光反射
部とからなる反射型の電気光学効果を用いる電界センサ
において、前記二つの位相シフト光導波路の光学距離を
互いに異ならせ、前記入力光導波路から直接に電界変化
が得られるようにしたことを特徴とする反射型の電界セ
ンサが得られる。 According to another aspect of the present invention, formed on a substrate.
Input optical waveguide, and two branched from the input optical waveguide
Two phase shift optical waveguides and the two phase shift optical waveguides
Light reflection provided by connecting to the side opposite to the branched side of the waveguide
Field sensor using reflective electro-optic effect consisting of
, The optical distance of the two phase shift optical waveguides is
Change the electric field directly from the input optical waveguide
The reflection type electric field cell is characterized in that
You can get a sensor .
【００１３】[0013]
【００１４】[0014]
【作用】図１１は、従来の光導波路型電界センサを示
す。センサ導体棒９を通して二つの位相シフト光導波路
３および４に、その近傍に設けた変調用電極６によっ
て、互いに逆向きの電界が印加される。その結果、電気
光学効果によって二つの位相シフト光導波路３および４
の屈折率が互いに逆向きの変化をなし、それぞれを伝播
する光波の位相の変化が互いに逆向となるために位相差
を生じ、合流部分における干渉により光の強度が変化す
る。FIG. 11 shows a conventional optical waveguide type electric field sensor. Electric fields in opposite directions are applied to the two phase shift optical waveguides 3 and 4 through the sensor conductor rod 9 by the modulation electrode 6 provided in the vicinity thereof. As a result, the two phase shift optical waveguides 3 and 4 are caused by the electro-optic effect.
The refractive indices of the two change in opposite directions, and the phases of the light waves propagating in the respective directions change in opposite directions, so that a phase difference occurs, and the light intensity changes due to interference at the confluence.
【００１５】本発明は、従来、電界センサ自体が電界分
布を変化させるという原因を除き、更に、高電界の測定
を可能とするために、まず、従来の電界センサで支障を
きたしていた、放電の原因となるものを取り除くことを
基本としている。即ち、先に説明した図１１に示す構成
から、センサ導体棒９および変調用電極６を除去する。The present invention eliminates the cause that the electric field sensor itself changes the electric field distribution, and in addition, in order to enable the measurement of a high electric field, first, the electric field sensor which has been a problem in the conventional electric field sensor is discharged. It is basically to remove the cause of. That is, the sensor conductor rod 9 and the modulation electrode 6 are removed from the configuration shown in FIG. 11 described above.
【００１６】本発明は、更に、電界センサの二つの位相
シフト光導波路を伝播する光波の間で、電界の強度に応
じて生ずる位相差を、二つの位相シフト光導波路の間に
設ける光学距離の差によって調整する。The present invention further provides a phase difference between optical waves propagating through the two phase shift optical waveguides of the electric field sensor, which is caused by the intensity of the electric field, between the two phase shift optical waveguides. Adjust by the difference.
【００１７】あるいは、光学距離が互いに異なる二つの
位相シフト光導波路部分に応力をかけることによって、
更に位相差の拡大および調整をすることができる。位相
シフト光導波路の部分に応力を加える物質を配すると、
これら二つの位相シフト光導波路が受ける応力の違いに
より、屈折率に差を生じ、更に、屈折率に変化をもたら
す距離の違いによって、これら二つの位相シフト光導波
路を通過する光の位相の変化量が互いに異なることとな
る。従って、応力をかける範囲を制御することによっ
て、合流部分における干渉により、出力光導波路からの
光出力を任意に調整することができる。Alternatively, by applying stress to two phase shift optical waveguide portions having different optical distances,
Further, the phase difference can be expanded and adjusted. When a substance that applies stress is placed in the phase shift optical waveguide part,
The amount of change in the phase of the light passing through these two phase shift optical waveguides is caused by the difference in the stress applied to these two phase shift optical waveguides and the difference in the distance that causes the change in the refractive index. Will be different from each other. Therefore, by controlling the range in which stress is applied, the optical output from the output optical waveguide can be arbitrarily adjusted due to the interference at the merging portion.
【００１８】導波路型光変調器においても、光学距離が
互いに異なる二つの位相シフト光導波路に、応力を発生
させる物質を設けることは、同様の現象と効果をもたら
す。Also in the waveguide type optical modulator, providing a stress-generating substance in two phase shift optical waveguides having different optical distances brings about the same phenomenon and effect.
【００１９】以下、本発明を、実施例によって詳細に説
明する。The present invention will be described in detail below with reference to examples.
【００２０】[0020]
【実施例１】図１は、本発明による電界センサの一実施
例を示す。ＬＮ結晶のｚ基板１の上にチタンを熱拡散さ
せて形成した幅５〜１２μｍ、深さ３〜１０μｍの入力
光導波路２、位相シフト光導波路３および４、出力光導
波路５によって分岐干渉型光導波路を構成した。二つの
位相シフト光導波路３および４の光学距離は互いに相違
し、その差は０.５ｍｍである。光学距離の差は、測定
する電界強度に応じて設定する。電界強度が小さい場合
にはその距離の差を大きくとる必要があり、製作上の都
合から１０ｍｍ程度が上限となる。Embodiment 1 FIG. 1 shows an embodiment of an electric field sensor according to the present invention. Branch interference type optical waveguides formed by thermally diffusing titanium on an LN crystal z substrate 1 and having a width of 5 to 12 μm and a depth of 3 to 10 μm, phase shift optical waveguides 3 and 4, and an output optical waveguide 5. A waveguide was constructed. The optical distances of the two phase shift optical waveguides 3 and 4 are different from each other, and the difference is 0.5 mm. The difference in optical distance is set according to the electric field strength to be measured. When the electric field strength is small, it is necessary to make a large difference between the distances, and the upper limit is about 10 mm for manufacturing reasons.
【００２１】以上述べたように、本発明による透過型の
電界センサは、それ自体が電界分布に影響を及ぼすこと
なく、また、放電を生じない構成であり、図２に示すよ
うに、この光導波路型の電界センサ３０を、半導体レー
ザ２０、光ファイバ２６、フォトダイオード２２、レベ
ル測定装置２３等からなる測定系に電界センサ３０を組
み込むことにより、高電界の測定を可能とする。As described above, the transmission type electric field sensor according to the present invention has such a structure that the electric field distribution itself is not affected and no discharge is generated. As shown in FIG. A high electric field can be measured by incorporating the waveguide type electric field sensor 30 into a measurement system including the semiconductor laser 20, the optical fiber 26, the photodiode 22, the level measuring device 23, and the like.
【００２２】[0022]
【実施例２】図３は、本発明による他の実施例で、反射
型の電界センサを示す。ＬＮ結晶のｚ基板１の上にチタ
ンを熱拡散させて形成した幅５〜１２μｍ、深さ３〜１
０μｍ程度の入力光導波路２、位相シフト光導波路３お
よび４、およびこれら位相シフト光導波路の分岐する側
と反対側に誘電体多層反射膜１０を設け、反射型の分岐
干渉型光導波路を構成した。二つの位相シフト光導波路
３および４の距離は互いに相違し、その差は０.４ｍｍ
である。二つの位相シフト光導波路の光学距離の差は、
測定する電界強度に応じて設定する。電界強度が小さい
場合にはその距離の差を大きくとる必要があり、製作上
の都合から１０ｍｍ程度が上限となる。Second Embodiment FIG. 3 shows another embodiment of the present invention, which is a reflection type electric field sensor. Width 5-12 μm and depth 3-1 formed by thermally diffusing titanium on the Z substrate 1 of LN crystal
An input optical waveguide 2 of about 0 μm, phase shift optical waveguides 3 and 4, and a dielectric multilayer reflection film 10 on the side opposite to the branching side of these phase shift optical waveguides are provided to form a reflection type branching interference type optical waveguide. . The distances between the two phase shift optical waveguides 3 and 4 are different from each other, and the difference is 0.4 mm.
Is. The difference in optical distance between the two phase shift optical waveguides is
Set according to the electric field strength to be measured. When the electric field strength is small, it is necessary to make a large difference between the distances, and the upper limit is about 10 mm for manufacturing reasons.
【００２３】以上述べたように、本発明による反射型の
電界センサは、金属を含まない構成となっているので、
それ自体が電界の分布に影響を及ぼすことなく、また高
電界における測定においても放電を生ずることはない。
図４に示すような半導体レーザ２０、光ファイバ２６、
サーキュレータ２１、フォトダイオード２２、レベル測
定装置２３等からなる測定系に、この反射型の電界セン
サ３１を組み込むことにより、高電界の測定が可能とな
る。As described above, since the reflection type electric field sensor according to the present invention does not contain metal,
As such, it does not affect the distribution of the electric field, and it does not cause a discharge even when measuring at high electric fields.
A semiconductor laser 20, an optical fiber 26, as shown in FIG.
A high electric field can be measured by incorporating the reflection type electric field sensor 31 in a measuring system including the circulator 21, the photodiode 22, the level measuring device 23 and the like.
【００２４】[0024]
【実施例３】図５は、本発明による透過型の電界センサ
の二つの位相シフト光導波路３および４を伝播する導波
光間に所定の位相差を付与する方法を示す。二つの位相
シフト光導波路部分にシアノアクリレート系高分子接着
剤１１を塗布することにより、二つの導波光の間に位相
差を付与する。図６に示すような電界強度と光出力との
関係において、電界強度が０の状態で光出力が最大出力
の５０％となるように動作点を計測しながら、高分子接
着剤１１を塗布して、動作点を調整することができる。
なお、反射型の電界センサにおいても、図７に示すよう
に、二つの位相シフト光導波路部分にシアノアクリレー
ト系高分子接着剤を塗布することにより、透過型の電界
センサと同様な効果を得ることができる。Third Embodiment FIG. 5 shows a method of imparting a predetermined phase difference between guided lights propagating through two phase shift optical waveguides 3 and 4 of a transmission type electric field sensor according to the present invention. By applying the cyanoacrylate-based polymer adhesive 11 to the two phase shift optical waveguide portions, a phase difference is provided between the two guided lights. In the relationship between the electric field intensity and the optical output as shown in FIG. 6, the polymer adhesive 11 is applied while measuring the operating point so that the optical output is 50% of the maximum output when the electric field intensity is 0. The operating point can be adjusted accordingly.
Even in the reflection type electric field sensor, as shown in FIG. 7, by applying a cyanoacrylate polymer adhesive to the two phase shift optical waveguide portions, the same effect as that of the transmission type electric field sensor can be obtained. You can
【００２５】[0025]
【実施例４】図８は、本発明による透過型の光変調器の
特性曲線上の動作点を所定の位相差を付与することによ
って調整する方法を示す。二つの位相シフト光導波路部
分３および４にシアノアクリレート系高分子接着剤１１
を塗布することにより、位相シフト光導波路を透過する
二つの導波光間に位相差を付与することができ、図９に
示すように、変調用電極６に印加された電圧と光出力と
の関係において、印加電圧０の時の光出力を調整するこ
とができる。ここでは、光出力を最大出力の５０％にな
るように調整している。なお、図１０に示すように、反
射型の光変調器においても、同様の手段によって同様の
効果を得ることができる。Fourth Embodiment FIG. 8 shows a method of adjusting the operating point on the characteristic curve of a transmission type optical modulator according to the present invention by giving a predetermined phase difference. A cyanoacrylate-based polymer adhesive 11 is applied to the two phase shift optical waveguide portions 3 and 4.
By applying the above, it is possible to impart a phase difference between the two guided lights that pass through the phase shift optical waveguide, and as shown in FIG. 9, the relationship between the voltage applied to the modulation electrode 6 and the optical output. In, the optical output when the applied voltage is 0 can be adjusted. Here, the optical output is adjusted to be 50% of the maximum output. Note that, as shown in FIG. 10, also in a reflection type optical modulator, the same effect can be obtained by the same means.
【００２６】[0026]
【発明の効果】以上説明したように、本発明は、電界セ
ンサの存在自体が被測定電界の電界分布を乱すことな
く、高電界においても放電等の支障なく測定することを
可能にし、かつ特性曲線における動作点の調整を行うこ
とにより、電界強度によって変調されて出力する光の強
度を目的に応じて調整することを可能とした。また、本
発明は、光変調器においても、その動作点を調整するこ
とにより、入力光に対する出力光の強度を目的に応じて
調整することを可能とした。As described above, according to the present invention, the presence of the electric field sensor itself does not disturb the electric field distribution of the electric field to be measured, and it is possible to perform measurement even in a high electric field without any trouble such as discharge and the characteristics. By adjusting the operating point on the curve, it is possible to adjust the intensity of the light modulated and output by the electric field intensity according to the purpose. Further, according to the present invention, also in the optical modulator, it is possible to adjust the intensity of the output light with respect to the input light according to the purpose by adjusting the operating point.
【図１】実施例１の電界センサの構成図。FIG. 1 is a configuration diagram of an electric field sensor according to a first embodiment.
【図２】実施例１の電界センサを組み込んだ測定系の例
を示す図。FIG. 2 is a diagram showing an example of a measurement system incorporating the electric field sensor of the first embodiment.
【図３】実施例２の電界センサの構成図。FIG. 3 is a configuration diagram of an electric field sensor according to a second embodiment.
【図４】実施例２の電界センサを組み込んだ測定系の例
を示す図。FIG. 4 is a diagram showing an example of a measurement system incorporating the electric field sensor of the second embodiment.
【図５】実施例３の電界センサに位相差を付与する方法
についての説明図。5A and 5B are explanatory views of a method of giving a phase difference to the electric field sensor of the third embodiment.
【図６】実施例３による効果を示す電界センサの特性を
示す説明図。FIG. 6 is an explanatory diagram showing the characteristics of the electric field sensor showing the effect of the third embodiment.
【図７】実施例３の反射型の電界センサに位相差を付与
する方法についての説明図。FIG. 7 is an explanatory diagram of a method for providing a phase difference to the reflective electric field sensor of the third embodiment.
【図８】実施例４の導波路型光変調器に位相差を付与
し、動作点を調整する方法についいての説明図。FIG. 8 is an explanatory diagram of a method for adjusting the operating point by giving a phase difference to the waveguide type optical modulator of the fourth embodiment.
【図９】実施例４による効果を示す電界センサの特性を
示す説明図。FIG. 9 is an explanatory diagram showing the characteristics of the electric field sensor showing the effect of the fourth embodiment.
【図１０】実施例４の反射型の導波路型光変調器に位相
差を付与し、動作点を調整する方法についての説明図。FIG. 10 is an explanatory diagram of a method of applying a phase difference to the reflective waveguide type optical modulator of Example 4 to adjust the operating point.
【図１１】従来の導波路型電界センサの構成図。FIG. 11 is a configuration diagram of a conventional waveguide type electric field sensor.
【図１２】従来の導波路型光変調器の構成図。FIG. 12 is a configuration diagram of a conventional waveguide type optical modulator.
【図１３】導波路型光変調器の特性の一例を示す説明
図。FIG. 13 is an explanatory diagram showing an example of characteristics of a waveguide type optical modulator.
１ ＬｉＮｂＯ3基板 ２ 入力光導波路 ３，４ 位相シフト光導波路 ５ 出力光導波路 ６ 変調用電極 ７ 入力光 ８ 出力光 ９ センサ導体棒 １０ 誘電体多層反射膜（光反射部） １１ 高分子接着剤（応力を発生する物質） ２０ 半導体レーザ ２１ サーキュレータ ２２ フォトダイオード ２３ レベル測定装置 ２６ 光ファイバ ２７ 導線 ３０ 電界センサ（透過型） ３１ 電界センサ（反射型）1 LiNbO 3 substrate 2 input optical waveguide 3, 4 phase shift optical waveguide 5 output optical waveguide 6 modulation electrode 7 input light 8 output light 9 sensor conductor rod 10 dielectric multilayer reflection film (light reflection part) 11 polymer adhesive ( Material generating stress) 20 Semiconductor laser 21 Circulator 22 Photodiode 23 Level measuring device 26 Optical fiber 27 Conductive wire 30 Electric field sensor (transmissive type) 31 Electric field sensor (reflective type)
Claims (2)
入力光導波路より分岐した二つの位相シフト光導波路
と、該二つの位相シフト光導波路が合流する出力光導波
路とからなる電気光学効果を用いる電界センサにおい
て、前記二つの位相シフト光導波路の光学距離を互いに
異ならせ、前記出力光導波路から直接に電界変化が得ら
れるようにしたことを特徴とする電界センサ。1. An electro-optical effect comprising an input optical waveguide formed on a substrate, two phase shift optical waveguides branched from the input optical waveguide, and an output optical waveguide where the two phase shift optical waveguides merge. In the electric field sensor using, the optical distances of the two phase shift optical waveguides are
Differently, the electric field change can be obtained directly from the output optical waveguide.
Electric field sensor, characterized in that it has to be.
入力光導波路より分岐した二つの位相シフト光導波路
と、前記二つの位相シフト光導波路の分岐した側と反対
側に接続して設けられた光反射部とからなる反射型の電
気光学効果を用いる電界センサにおいて、前記二つの位
相シフト光導波路の光学距離を互いに異ならせ、前記入
力光導波路から直接に電界変化が得られるようにしたこ
とを特徴とする反射型の電界センサ。2. An input optical waveguide formed on a substrate, two phase shift optical waveguides branched from the input optical waveguide, and a connection provided on the opposite side to the branched side of the two phase shift optical waveguides. In the electric field sensor using the reflection type electro-optic effect, the optical distances of the two phase shift optical waveguides are different from each other, and
A reflective electric field sensor characterized in that an electric field change can be obtained directly from a force optical waveguide .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17375994A JP3435583B2 (en) | 1994-06-30 | 1994-06-30 | Electric field sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17375994A JP3435583B2 (en) | 1994-06-30 | 1994-06-30 | Electric field sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0815354A JPH0815354A (en) | 1996-01-19 |
| JP3435583B2 true JP3435583B2 (en) | 2003-08-11 |
Family
ID=15966620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17375994A Expired - Fee Related JP3435583B2 (en) | 1994-06-30 | 1994-06-30 | Electric field sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3435583B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4694235B2 (en) * | 2005-03-30 | 2011-06-08 | 住友大阪セメント株式会社 | Optical waveguide device |
| FR3111716B1 (en) * | 2020-06-19 | 2022-06-17 | Commissariat Energie Atomique | Optical device and manufacturing method |
-
1994
- 1994-06-30 JP JP17375994A patent/JP3435583B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0815354A (en) | 1996-01-19 |
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