JP3461886B2 - LC element, semiconductor device, and method of manufacturing LC element - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LC element, a semiconductor device and a method for manufacturing an LC element, which can be incorporated in a semiconductor device or the like or can attenuate a predetermined frequency band by itself.

[0002]

2. Description of the Related Art With the development of electronic technology in recent years, electronic circuits have been widely used in various fields. Therefore, it is desirable to operate these electronic circuits stably and reliably without being affected by the outside. Be done.

However, noise enters the electronic circuit directly or indirectly from the outside. For this reason,
There is a problem that various electronic devices using electronic circuits often cause malfunctions.

In particular, electronic circuits often use a switching regulator as a DC power source. Therefore, a large amount of noise having various frequency components is often generated in the power supply line of the switching regulator due to a transient current such as switching or due to a load change caused by the switching operation of the digital IC used. Then, these noises are propagated to other circuits in the same device through the power supply line or by radiation to cause malfunction or S / S.
This may have a bad effect such as a decrease in N ratio, and may cause malfunction of other electronic devices that are being used even closer.

In order to remove such noise, various noise filters are generally used in electronic circuits.
In particular, since many electronic devices with various configurations are used in recent years, regulations on noise have become more and more stringent, and as a small, high-performance noise filter that can reliably remove generated noise. Development of a functional LC element is desired.

As one of such LC elements, the LC noise filter disclosed in Japanese Patent Laid-Open No. 3-259608 is known. This LC noise filter has an L component and a C component in a distributed constant, and can obtain good attenuation characteristics over a relatively wide band as compared with a lumped constant type LC noise filter. is there.

[0007]

By the way, the above-mentioned L
The C noise filter is manufactured by forming a capacitor conductor on one surface of an insulating sheet and an inductor conductor on the other surface, and then folding the insulating sheet. However, there is a problem that the manufacturing process becomes complicated because such processes are required.

Also, this LC noise filter is used as an IC or L
When used by inserting directly into the SI power supply line or signal line, the LC noise filter and the IC, etc. must be wired, and there is the problem that it takes time to assemble the components.

Since this LC noise filter is formed as a single component, it is almost impossible to include it in an IC or LSI circuit, that is, to insert it between internal wirings of the IC or LSI. there were.

Furthermore, the capacitor formed in a distributed constant in this LC noise filter is determined by the shape and arrangement of each of the inductor conductor and the capacitor conductor, so that the capacitance is constant after the component is completed. Therefore, there is a problem that the characteristics as a whole are fixed and there is no versatility. For example, when it is desired to change only the capacitance, it is necessary to change the shape of the capacitor conductor, and it is difficult to arbitrarily change and use the capacitance in the incorporated circuit.

Therefore, the present invention was created in view of the above-mentioned points, and its purpose is to simplify the manufacturing process and to eliminate the work of assembling parts in the subsequent steps, and further to realize the IC and LSI. An object of the present invention is to provide an LC element that can be formed as a part, a semiconductor device, and a method for manufacturing the LC element.

Another object of the present invention is to provide an LC element, a semiconductor device and a method for manufacturing an LC element, the characteristics of which can be arbitrarily changed by changing the capacitance existing in a distributed constant as required. To do.

[0013]

In order to solve the above-mentioned problems, an LC element according to a first aspect of the present invention is a spiral-shaped electrode formed on the surface of a semiconductor substrate, and a part of the semiconductor substrate, which is the spiral. Formed along the shape of the electrode, p
A first region composed of a layer or an n layer, and a second region having a conductivity type opposite to the first region ,
A spiral-shaped pn junction layer in which the first region is formed in the second region, and each of the spiral-shaped electrode and the second region forming a part of the pn junction layer. And a capacitor formed by the pn junction layer corresponding to each inductor exist in a distributed constant manner, and at least one of the spiral-shaped electrode and the second region is a signal input / output path. It is characterized by using as.

According to a second aspect of the present invention, there is provided the LC element according to the first aspect, wherein the pn electrode is provided with respect to the spiral electrode.
By setting the length of at least the second region of the bonding layer to be long or short, the spiral-shaped electrode and p
It is characterized in that it partially corresponds to the second region of the n-junction layer.

According to a third aspect of the present invention, there is provided an LC element according to the first or second aspect, wherein the spiral electrode is divided into a plurality of portions, or at least the second region of the pn junction layer is divided into a plurality of portions. It is characterized in that a part of each of the divided pieces is electrically connected.

An LC element according to a fourth aspect is the LC element according to any one of the first to third aspects, wherein the LC element is provided near both ends of one of the spiral-shaped electrode and the second region of the pn junction layer. The first and second input / output electrodes, and the ground electrode provided near the other end of the spiral-shaped electrode and the second region of the pn junction layer, the first and second input / output electrodes It is characterized in that a signal is input from one of the input / output electrodes and a signal is output from the other, and the ground electrode is connected to or grounded to a power source of fixed potential.

The LC element of claim 5 is the same as claim 1 or 2
In the LC element, the first and second input / output electrodes provided near both ends of either the spiral electrode or the second region of the pn junction layer, the spiral electrode and the pn A third and a fourth input / output electrode provided in the vicinity of the other end of the second region of the bonding layer, and each of the spiral-shaped electrode and the second region of the pn bonding layer is signaled. It is characterized in that it is used as a common mode type element as an input / output path.

An LC element according to a sixth aspect is the LC element according to any one of the first to fifth aspects, wherein the pn junction layer is formed on at least one of the spirally shaped electrode and the second region of the pn junction layer. The reverse bias voltage level signal is input.

An LC element according to a seventh aspect is the LC element according to any one of the first to fifth aspects, wherein the bias circuit applies a predetermined reverse bias voltage to the pn junction layer, and a signal obtained by removing a DC component from an input signal. Is further input to at least one of the spiral-shaped electrode and the second region of the pn junction layer.

An LC element according to an eighth aspect is the LC element according to any one of the first to fifth aspects, in which an insulating layer is formed between the spiral electrode and the first region of the pn junction layer, A bias circuit for applying a predetermined reverse bias voltage is provided to the pn junction layer.

The LC device according to claim 9 is the LC device according to claim 7 or 8.
In the LC element, the bias circuit can change the reverse bias voltage applied to the pn junction layer,
The capacitance of the pn junction layer is arbitrarily changed by changing the reverse bias voltage applied to the n junction layer.

A semiconductor device according to claim 10 is the semiconductor device according to any one of claims 1 to 9.
One of the LC elements is formed as a part of the substrate, and at least one of the spirally shaped electrode and the second region of the pn junction layer is inserted into a signal line or a power supply line and integrally molded. To do.

The LC element according to claim 11 is the LC element according to any one of claims 1 to 3, wherein the pn is formed on a semiconductor substrate.
A bonding layer is formed on the bonding layer, the spiral electrode is formed on the bonding layer, an insulating film is formed on the entire surface of the semiconductor substrate by a chemical liquid phase method, and a part of the insulating film is removed by etching or laser light irradiation. The terminal is attached by making a hole and sealing the hole to the extent that it rises on the surface with solder.

An LC element according to a twelfth aspect is formed on a part of a semiconductor substrate, and has a first region and an opposite conductivity.
A spiral-shaped pn junction layer including a second region serving as a mold region is provided, and the inductor formed by each of the first and second regions and the capacitor formed by the pn junction layer are distributed constants. Existently and at least one of the first and second regions is used as a signal input / output path.

The LC element of claim 13 is the L element of claim 12.
In the C element, the second region is set to be long or short with respect to the first region forming the pn junction layer so that the first region and the second region partially correspond to each other. And

An LC element according to a fourteenth aspect is the LC element according to the twelfth or thirteenth aspect, wherein one of the first region and the second region forming the pn junction layer is divided into a plurality of pieces, and each divided piece. It is characterized by electrically connecting a part of each of the.

The LC element according to claim 15 is the LC element according to any one of claims 12 to 1.
4. In the LC element of any of 4, the first and second input / output electrodes provided near both ends of either the first region or the second region forming the pn junction layer, and the pn junction. A ground electrode provided near one end of the other of the first region and the second region forming the layer, and inputting a signal from any one of the first and second input / output electrodes, A signal is output from the other terminal, and the earth electrode is connected to or grounded to a power source having a fixed potential.

An LC element according to a sixteenth aspect is the LC element according to the twelfth or thirteenth aspect, wherein the first element is provided near both ends of one of the first region and the second region forming the pn junction layer. And a second input / output electrode, and third and fourth input / output electrodes provided near both ends of the other of the first region and the second region forming the pn junction layer. It is characterized in that it is used as a common mode type element in which each of the first and second regions of the pn junction layer is used as a signal input / output path.

The LC device according to claim 17 is the LC device according to any one of claims 12 to 1.
In any of the LC elements of No. 6 and 6, a signal of a reverse bias voltage level of the pn junction layer is input to at least one of the first region and the second region forming the pn junction layer. Characterize.

The LC device according to claim 18 is the LC device according to any one of claims 12 to 1.
In the LC element according to any one of 6 above, a bias circuit for applying a predetermined reverse bias voltage to the pn junction layer, and a signal obtained by removing a direct current component from an input signal are supplied to the first pn junction layer.
And a DC component removing circuit for inputting to at least one of the second region and the second region.

The LC element according to claim 19 is the L element according to claim 18.
In the C element, the bias circuit can change the reverse bias voltage applied to the pn junction layer, and the capacitance of the pn junction layer can be arbitrarily changed by changing the reverse bias voltage applied to the pn junction layer. It is characterized by

A semiconductor device according to claim 20 is the semiconductor device according to claim 12 to.
Forming one of the LC elements of 19 as a part of the substrate,
At least one of the first and second regions of the pn junction layer is inserted into a signal line or a power supply line and integrally molded.

The LC device according to claim 21 is the LC device according to any one of claims 12 to 1.
In the LC element of any one of 4 above, the pn junction layer is formed on a semiconductor substrate, an insulating film is formed on the entire surface of the semiconductor substrate by a chemical liquid phase method, and a part of the insulating film is etched or laser light is applied. Remove by irradiation to make holes,
It is characterized in that terminals are attached by sealing the holes to the extent that they rise up on the surface with solder.

The method for manufacturing an LC device according to claim 22 is a semiconductor device.
The first spiral-shaped spiral substrate composed of p-layers or n-layers
Area and an area of opposite conductivity type to the first area.
And a second region that functions as a inductor.
Spiral-shaped pn junction layer in which the pacitor exists in a distributed constant
And a first step of forming a film on the surface of the semiconductor substrate.
A second step of forming a spiral electrode facing the first region and functioning as an inductor, and connecting to both ends or one end of each of the spiral electrode and the second region of the pn junction layer. And a third step of forming a wiring layer according to the present invention.

According to a twenty-third aspect of the present invention, there is provided a method of manufacturing an LC element, wherein a first region having a spiral shape is formed on a semiconductor substrate, and a region having an opposite conductivity type to the first region serves as an inductor.
, And the capacitor exists in a distributed constant
A first step of forming a spiral-shaped pn junction layer, and a second step of forming a wiring layer connected to both ends or one end of each of the first and second regions of the pn junction layer, It is characterized by including.

[0036]

In the LC device of the first aspect, the pn junction layer and the electrode formed on the surface thereof are formed in a spiral shape, and each of the electrode and the second region of the pn junction layer functions as an inductor. To do. Further, since a spiral pn junction layer is formed between them, a distributed constant capacitor is formed between the spiral electrode and the second region of the pn junction layer by this pn junction layer. To be done.

Therefore, the signal input to at least one of the spiral-shaped electrode and the second region of the pn junction layer described above is propagated through the inductors and capacitors existing in a distributed constant, and is excellent over a wide band. Attenuation characteristics can be obtained.

In particular, the LC element of claim 1 can be manufactured by forming a spiral pn junction layer on the semiconductor substrate and further forming a spiral electrode on the surface side thereof. It will be very easy. Also,
Since this LC element is formed on a semiconductor substrate,
It is also possible to form it as a part of the LSI or the LSI.

Further, in the LC element of the second aspect, at least the second region of the pn junction layer is formed longer or shorter than the spiral electrode described above. Even in this case, similarly, each of the spiral-shaped electrodes having different lengths and the second region of the pn junction layer functions as an inductor, and the capacitor formed by the pn junction layer has a distributed constant between them. Exist. Therefore, this LC element has an effect that it has good attenuation characteristics over a wide band, is easy to manufacture, and can be formed as a part of a substrate.

Further, in the LC element of the third aspect, one of the spiral electrode and the pn junction layer described above is divided into a plurality of pieces, and a part of these divided pieces is electrically connected for use. In this case, by using the other side which is not divided as a signal input / output path, a distributed constant type LC element having characteristics different from those of the above-described LC element is obtained. In particular, since the inductance of each segment is small, it is possible to obtain an LC element that is less affected by the inductance of each segment.

Further, in the LC element of the fourth aspect, the first and second input / output electrodes are provided near both ends of either one of the spiral-shaped electrode and the second region of the pn junction layer, and the other By providing the ground electrode near one end, the electrode or the second region on the side where the first and second input / output electrodes are provided is used as a signal input / output path.
A terminal type LC element can be easily formed.

According to the LC element of claim 5, the LC element of claim 4 is used.
By providing the third and fourth input / output electrodes on the other side of the electrode or both ends of the second region, a 4-terminal common mode type LC element can be easily formed.

Further, in the LC element of the sixth aspect, a signal having a voltage level such that a reverse bias is applied to the pn junction layer is input to at least one of the spiral electrode and the second region of the pn junction layer. As a result, a distributed constant capacitor can be reliably formed between the pn junctions.

That is, since the pn junction layer can function as a capacitor when a reverse bias is applied, by inputting a signal such that the spiral pn junction layer functions as a capacitor, an overall wide band is obtained. Therefore, it can operate as an LC element having good attenuation characteristics.

Further, in the LC element of claim 7, the pn
A reverse bias voltage for the junction layer is applied by a bias circuit. Further, a DC component removing circuit is provided corresponding to this, and the signal from which the DC component has been removed from the input signal is input while being superimposed on the reverse bias voltage applied from the bias circuit. As a result, the pn junction layer can be used with a complete reverse bias, and the spiral pn junction layer can be reliably used as a capacitor.

Further, in the LC element of claim 8, an insulating layer is formed between the spiral electrode and the first region of the pn junction layer, and a reverse bias voltage is applied to the pn junction layer by a bias circuit. is doing. Therefore, in this case as well, p
The n-junction layer can be reliably used as a capacitor, and operates as an LC element having good attenuation characteristics in a wide band as a whole. Further, in this case, since the spirally-shaped electrode and the pn junction layer are separated from each other in terms of direct current by the insulating layer, it is not necessary to add the direct current component removing circuit as used in the above-mentioned claim 7.

Further, in the LC element of the ninth aspect, the reverse bias voltage applied by the bias circuit can be variably set. As a result, the spiral pn
The capacity of the bonding layer can be changed arbitrarily, the damping characteristics,
That is, the frequency characteristic can be variably controlled as needed.

According to a tenth aspect of the semiconductor device, the LC element of each of the above-mentioned aspects is formed on a part of the substrate so as to be inserted into a signal line or a power supply line. As a result, it can be manufactured integrally with other components on the semiconductor substrate, which facilitates the manufacturing and eliminates the work of assembling the components in the subsequent process.

Further, in the LC element of claim 11, the insulating film is formed on the entire surface by the chemical liquid phase method after the LC element of any of claims 1 to 3 described above is formed on the semiconductor substrate. After that, a hole is formed in a part of the insulating film by etching or laser light irradiation, and solder is put in the hole to attach a terminal. Therefore, it is possible to easily manufacture the surface mount type LC element, and the surface mount type LC element also facilitates the assembling work of the LC element.

Further, in the LC element and the semiconductor device according to claims 12 to 21, the spiral electrode in the LC element and the semiconductor device according to each of the above claims is omitted, and the function of this electrode is the first of the pn junction layer. The feature is that it is given to the area. That is, each of the first and second regions of the pn junction layer functions as an inductor, and a distributed constant capacitor due to the pn junction layer exists between them.

Therefore, each of the LC elements according to the twelfth to twenty-first aspects, like the LC elements according to the eleventh aspect, has good attenuation characteristics and is advantageous in that it is easy to manufacture. Moreover, since the spiral electrode is not formed on the semiconductor surface, the step of forming this electrode is unnecessary, and further, the manufacturing is facilitated, and the semiconductor surface can be effectively used for other purposes.

Further, L of claim 22 or claim 23
The C element manufacturing method is a method for manufacturing each of the LC elements described above by applying a semiconductor manufacturing technique. That is,
First, a spiral-shaped pn junction layer is formed, or a spiral-shaped electrode is formed together with the spiral-shaped pn junction layer, and then a wiring layer connected to these is formed to form L.
The C element is completed.

As described above, the above-mentioned LC element can be manufactured by applying a general semiconductor manufacturing technique, and it is possible to reduce the size and cost, and
It is possible to mass-produce a plurality of pieces at the same time.

[0054]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An LC device of one embodiment to which the present invention is applied will be specifically described below with reference to the drawings.

First Embodiment FIG. 1 is a plan view of an LC device of the first embodiment to which the present invention is applied. 2 is an enlarged sectional view taken along the line AA of FIG.

As shown in these figures, the LC of this embodiment is
The device 100 is a p-type silicon substrate (p
And -Si substrate) of spiral shape formed in the vicinity of 24 the surface of the n ⁺ regions 22, it includes further and its p ⁺ region 20 of the part which is formed in a spiral shape, these n ⁺ regions 2
2 and the p ⁺ region 20 form a pn junction layer 26.
Further, as compared with the p-Si substrate 24 described above, the n ⁺ region 2
2 and the p ⁺ region 20 are set to have a high impurity concentration, and the p-Si substrate 24 and the n ⁺ region 22 are
By applying a reverse bias voltage between the
The i substrate 24 functions as an isolation region. Actually, the reverse bias voltage may be surely applied by setting the same potential as that of the ground electrode 18 described later.

Further, the LC element 100 of this embodiment is on the surface side of the above-mentioned p ⁺ region 20 and is the p ⁺ region 20.
A spiral-shaped spiral electrode 10 is formed at a position along with, and a ground electrode 18 is connected to one end (for example, one end on the outside) of the spiral electrode 10.
Two input / output electrodes 14 and 16 are connected to both ends of the n ⁺ region 22 described above.

The ground electrode 18 is attached to the spiral electrode 10 outside the active region so as not to damage the thin p ⁺ region 20 as shown in FIG. Further, the connection between the spiral electrode 10 and the input / output electrode 18 (the connection of the other electrodes is the same) needs to be performed so that the spiral electrode 10 does not come into contact with the p ⁺ region 20, etc. An insulating layer such as an oxide film is formed in advance in a necessary portion.

The LC element 100 of this embodiment having such a structure is a spiral electrode 1 having a spiral shape.
The 0 and n ⁺ regions 22 will function as inductor conductors, respectively. Further, when the pn junction layer 26 electrically connected to the spiral electrode 10 is used in the reverse bias state, it functions as a spiral capacitor. Therefore, the LC element 100 in which the inductor formed by the spiral electrode 10 and the n ⁺ region 22 and the capacitor formed by the pn junction layer 26 exist in a distributed constant manner is formed.

FIG. 3 is a diagram showing an equivalent circuit of the LC element 100 of this embodiment. As shown in FIG. 7A, the n ⁺ region 22 of the pn junction layer 26 functions as an inductor having the inductance L1, and the signal input from one of the input / output electrodes 14 is propagated through the n ⁺ region 22. It is output from the other input / output electrode 16. Also, the spiral electrode 1
0 functions as an inductor having an inductance L2, and the ground electrode 18 provided at one end is grounded or is used by being connected to a power source having a fixed potential E.

In such a connection state, when the voltage level of the signal input to the input / output electrode 14 is set higher than the voltage level of the earth electrode 18 (0 V or fixed potential E), the n ⁺ region 22 Since a reverse bias voltage is applied to the pn junction layer 26 including the p ⁺ region 20, this p
The n-junction layer 26 functions as a capacitor having a capacitance T. Further, this capacitor is formed in a distributed constant over the entire length of the first spiral electrode 10, and can exhibit excellent attenuation characteristics which are not found in the conventional lumped constant type LC element.

In FIG. 3B, a reverse bias voltage is forcibly applied to the pn junction layer 26, which allows the pn junction layer 26 to reliably operate as a capacitor. Specifically, a bias power supply 28 for applying a predetermined reverse bias voltage is connected between the input / output electrode 14 and the ground electrode 18, and a capacitor for removing only the DC component in the input signal. 30 is connected to the input / output electrode 14 side. By adding such a circuit, a constant reverse bias voltage can be constantly applied to the pn junction layer 26, and a signal superimposed on this reverse bias voltage is input to the LC element 100 of this embodiment. can do.

Since the signal output from the input / output electrode 16 is applied with a reverse bias voltage, it is desirable to remove the reverse bias voltage by connecting a capacitor 32 to the outside of the signal.

Further, in FIG. 3C, instead of the bias power source 28 described above, a variable bias power source 34 capable of arbitrarily changing the reverse bias voltage level is connected. In general, the width of the depletion layer generated at the pn junction surface changes according to the magnitude of the reverse bias voltage applied to the pn junction layer 26, and the capacitance C also changes accordingly. Therefore, the input / output electrode 14 and the ground electrode 1
By changing the reverse bias voltage applied to the pn junction layer 26 via 8, the capacitance C existing in a distributed constant can be arbitrarily changed, and the attenuation characteristic of the LC element 100 as a whole can be adjusted or changed. .

FIG. 4 is a view showing the manufacturing process of the LC element 100 of this embodiment, and shows the state of each manufacturing process of the cross section taken along the line BB of FIG.

(1) Growth of epitaxial layer: First, the oxide film on the surface of the p-Si substrate 24 (wafer) is removed, and then the n ⁺ -type epitaxial layer 25 is grown on the entire surface of the p-Si substrate 24. ((A) of the same figure).

(2) Formation of isolation region:
In order to make the region excluding the n ⁺ region 22 and the p ⁺ region 20 shown in FIG. 1 an isolation region, diffusion of p-type impurities or ion implantation is performed.

Specifically, first, the surface of the epitaxial layer 25 is thermally oxidized to form the oxide film 70. Then, after removing the oxide film 70 at the position where the p region is to be formed by photolithography, the p region is selectively formed by selectively adding p-type impurities by thermal diffusion or ion implantation. The p region thus formed becomes a part of the p-Si substrate 24 to form an isolation region (FIG. 2 (B)).

As a result of forming the isolation region in this manner, the remaining epitaxial layer 25 forms the spiral n ⁺ region 22.

(3) Formation of pn junction layer: Next, p-type impurities are introduced into a part of the spirally formed n ⁺ region 22 by thermal diffusion or ion implantation to form a spiral p ⁺ region. Form 20.

Specifically, first, p− including the n ⁺ region 22
The surface of the Si substrate 24 is thermally oxidized to form an oxide film 72. Then, the p ⁺ region 20 is formed by photolithography.
After removing the oxide film 72 at the position where the p ⁺ region is to be formed, the p ⁺ region 20 is selectively formed by selectively adding p-type impurities by thermal diffusion or ion implantation.

This p ⁺ region 20 is formed by the n ⁺ formed previously.
Since it needs to be formed in the region 22, the p ⁺ region 20 is formed by adding the p-type impurity in an amount equal to or larger than the amount of the n-type impurity that has already been introduced (FIG. 7C).

In this way, the spiral pn junction layer 26 consisting of the n ⁺ region 22 and the p ⁺ region 20 is formed.

(4) Formation of spiral electrode: Next, after forming an oxide film 74 on the surface by thermal oxidation, a spiral-shaped hole is formed on the surface of the p ⁺ region 20 by photolithography, and then the spiral-shaped hole is formed. The spiral electrode 10 is formed in the opened portion by vapor-depositing aluminum, for example (FIG. 3 (D)). After that, the ground electrode 18 is provided in the vicinity of one end of the spiral electrode 10,
Two input / output electrodes 14 and 16 are formed near both ends of the ⁺ region 22 by vapor deposition of aluminum or the like.

Finally, P-glass is deposited on the entire surface and then heated to form a flat surface, whereby the LC element 100 is completed.

The process of manufacturing the LC element 100 of this embodiment is basically similar to the process of manufacturing a normal bipolar transistor or diode, and the shape of the pn junction layer 26 and the isolation region between them are different. It is different. Therefore, it can be dealt with by changing the shape of the photomask in the process of manufacturing a general bipolar transistor, which facilitates manufacturing and is suitable for downsizing. Further, it can be formed on the same substrate as semiconductor components such as general bipolar transistors and MOS-FETs, and can be formed as a part of IC or LSI. Moreover, when it is formed as a part of an IC or an LSI, it is possible to omit the work of assembling the parts in the subsequent process.

In the above-described manufacturing process of the present embodiment, the case where isolation is performed after first forming the n ⁺ region on the entire surface by epitaxial growth has been described as an example, but on the surface of the p-Si substrate 24. After forming the oxide film, a spiral-shaped n
⁺ Performs Apertures corresponding to the region 22, formed directly p ⁺ region 20 after formation of the n ⁺ region 22 by introducing n-type impurities by thermal diffusion or ion implantation in this part, in the same manner You may. Further, as a method of forming the pn junction layer, a general semiconductor manufacturing technique can be used.

As described above, the LC device 100 of this embodiment is used.
Is the n ⁺ region 2 of the spiral electrode 10 and the pn junction layer 26.
Each of the two forms an inductor, and the spiral pn junction layer 26 formed along the spiral electrode 10 functions as a capacitor by being used in reverse bias. Moreover, since the pn junction layer 26 is formed over the entire length of the spiral electrode 10, the inductor having the inductances L1 and L2 formed by the spiral electrode 10 and the n ⁺ region 22 and the capacitance C formed by the pn junction layer 26. And a capacitor having a distributed constant exist.

Therefore, when the ground electrode 18 provided at one end of the spiral electrode 10 is connected to ground or a fixed potential and the n ⁺ region 22 of the pn junction layer 26 is used as a signal input / output path, The LC element has a good attenuation characteristic in a wide band with respect to the input signal.

Further, as described above, this LC device 100
Can be manufactured by applying the manufacturing technology of a general bipolar transistor and the like, and is therefore easy to manufacture and suitable for miniaturization. In addition, when this LC element is manufactured as a part of a semiconductor substrate, wiring with other components can be performed at the same time, which eliminates the need for assembling work in a subsequent process.

In addition, the LC device 100 of this embodiment has a pn
By changing the value of the reverse bias voltage applied to the junction layer 26, the capacitance C of the capacitor formed in a distributed constant can be variably controlled, and the overall frequency characteristic of the LC element 100 can be adjusted or changed. it can.

Although the spiral n ⁺ region 22 is used as the signal input / output path in the above-described embodiment, the ground electrode 18 is provided at one end of the n ⁺ region 22 and the spiral electrode 10 is connected to both ends of the spiral electrode 10. The output electrodes 14 and 16 may be provided so that the spiral electrode 10 side is used as a signal input / output path. In general, the specific resistance of the n ⁺ region 22 is larger than that of the spiral electrode 10. Therefore, by exchanging the signal input / output paths, LC elements having different attenuation characteristics, that is, frequency characteristics can be formed.

Further, in the above-described embodiment, the spiral electrode 10 is used as one inductor conductor, and the n ⁺ region 22 forming the pn junction layer 26 is used as the other inductor conductor. 10
Alternatively, the p ⁺ region 20 forming the pn junction layer 26 may be used as one inductor conductor. That is, in this case, the pn junction layer 26 functions as a capacitor and at the same time, the pn junction layer 2
Both the p ⁺ region 20 and the n ⁺ region 22 forming 6 will be used as the inductor conductor.

FIG. 5 is a diagram showing a modification of the LC element of this embodiment, showing an LC element that does not use a spiral electrode. In the LC element shown in the figure, the ground electrode 18 is provided at one end of the p ⁺ region 20 forming the pn junction layer 26, and two input / output electrodes 1 are provided at both ends of the n ⁺ region 22.
4, 16 are provided. This LC element has a p ⁺ region 20
And the n ⁺ region 22 both function as inductor conductors, and the pn junction layer 26 formed by them
Functions as a distributed constant capacitor, and like the LC element 100 shown in FIG. 1, has good attenuation characteristics and has advantages such as easy manufacture. Also, this LC
When manufacturing the element, the step of forming the spiral electrode 10 shown in FIG. 4D is unnecessary.

In the LC element shown in FIG. 5, the p ⁺ region 20 side may be used as a signal input / output path by exchanging the connection relationship between the two input / output electrodes 14 and 16 and the ground electrode 18. Of course.

Second Embodiment Next, an LC device according to a second embodiment of the present invention will be specifically described with reference to the drawings.

The LC device 100 of the first embodiment described above is
Although the pn junction layer 26 having substantially the same length is formed over substantially the entire length of the spiral electrode 10, the LC element 200 of the present embodiment has the spiral electrode 10 shown in FIG.
It is characterized by shortening about 1 turn.

FIG. 6 is a plan view of the LC device 200 of the second embodiment. Even when the spiral electrode 10 is partially omitted as shown in the figure, an inductor formed by each of the shortened spiral electrode 10 and the n ⁺ region 22 of the long pn junction layer 26, and the short spiral electrode Since a capacitor formed by a part of the pn junction layer 26 facing 10 is formed in a distributed constant,
As in the case of the LC element 100 shown in (1), it has a good attenuation characteristic.

FIG. 7 is a diagram showing an equivalent circuit of the LC element 200 of this embodiment. As shown in FIG. 7A, the inductance L3 is reduced by the number of turns of the spiral electrode 10, and the capacitance C1 existing in a distributed constant is correspondingly reduced.

Further, as shown in FIGS. 6B and 6C, a capacitor 30 is connected between the input / output electrode 14 and the ground electrode 18 together with the bias power source 28 or the variable bias power source 34. As a result, the pn junction layer 26
It is possible to reliably realize the reverse bias of
As in the first embodiment, the characteristic value can be changed by variably controlling the value of the reverse bias voltage.

As described above, the LC device 200 of this embodiment is used.
Shows that the short spiral electrode 10 and the n ⁺ region 22 of the pn junction layer 26 form an inductor, and the pn junction layer 26 forms a capacitor in a distributed constant manner. Can function as an element having In addition, the LC element 200 can be manufactured by using a semiconductor manufacturing technique, and it can be formed as a part of an LSI or the like, and in this case, a wiring process in a post process can be omitted.
This is the same as the LC element 100 of the example.

In the present embodiment described above, compared with the LC device 100 shown in FIG. 1, only the length of the spiral electrode 10 is shortened while maintaining the shape of the pn junction layer 26. The portion not facing the electrode 10 does not need to be the pn junction layer 26. Further, the input / output electrodes 14 and 16 and the ground electrode 18 may be replaced with each other.

FIG. 8 is a diagram showing a modification of the LC element of this embodiment. The LC element shown in the figure is the LC shown in FIG.
This is a partial modification of the pn junction layer 26 of the device.
Specifically, the p ⁺ region 20 of the pn junction layer 26 that does not face the spiral electrode 10 is omitted, and a part of the pn junction layer 26 that does not function as a capacitor is formed into a single n ^+.
The area 22 is formed. This LC element is substantially the same as the LC element shown in FIG. 1 and has similar characteristics and advantages.

FIG. 9 is a diagram showing another modification of the LC element of this embodiment. In the LC element shown in the figure, the pn junction layer 26 is formed shorter than the spiral electrode 10, and the spiral electrode 10 side is used as a signal input / output path. In this case, since the spiral electrode 10 side having a smaller specific resistance than the n ⁺ region 22 is used as the signal input / output path, it has characteristics different from those of the LC element 200 shown in FIG.

FIG. 10 is a diagram showing another modification of the LC element of this embodiment, showing an LC element not using the spiral electrode 10 shown in FIG. The LC element shown in the figure has the n ⁺ region 2 in the spiral pn junction layer 26 having the p ⁺ region 20 having a shorter length than the n ⁺ region 22.
Two input / output electrodes 14 and 16 are provided at both ends of the pn region 2
The ground electrode 18 is provided at one end (for example, the outside) of 0. In this LC element, both p ⁺ region 20 and n ⁺ region 22 having different lengths function as inductor conductors, and p formed by both of them.
The n-junction layer 26 functions as a distributed-constant capacitor, and like the LC element 200 shown in FIG. 6, has good attenuation characteristics and has advantages such as easy manufacturing.

Third Embodiment Next, an LC element 300 of a third embodiment of the present invention will be specifically described with reference to the drawings.

Although the LC element 100 of the first embodiment and the LC element 200 of the second embodiment described above function as a three-terminal type normal mode element, the LC element 300 of this embodiment is It is characterized in that it is formed so as to function as a 4-terminal common mode element.

FIG. 11 is a plan view of the LC device of the third embodiment. As shown in the figure, the LC device 30 of the third embodiment
0 is the input / output electrodes 36, 3 at both ends of the spiral electrode 10.
8 is provided, and this point is the LC element 1 shown in FIG.
It is different from 00.

FIG. 12 is a diagram showing an equivalent circuit of the LC element of the third embodiment. As shown in FIG. 3A, a spiral n ⁺ formed between the two input / output electrodes 14 and 16 is formed.
The region 22 functions as an inductor having the inductance L1, and the spiral electrode 10 formed between the two input / output electrodes 36 and 38 functions as an inductor having the inductance L2. Moreover, a capacitor having a capacitance C is formed between these two inductors in a distributed constant manner by the pn junction layer 26, like the LC element 100 of the first embodiment.

As described above, the LC device 300 of this embodiment is used.
By providing two input / output electrodes 36 and 38 at both ends of the spiral electrode 10 as well as the n ⁺ region 22,
It can function as a 4-terminal common mode element having good attenuation characteristics.

Since the pn junction layer 26 operates as a capacitor when the relative potential of the n ⁺ region 22 with respect to the p ⁺ region 20 (that is, with respect to the spiral electrode 10) is high and reverse bias is applied, it is described above. In order to operate as a 4-terminal common mode element, it is necessary to set the signal level input to the n ⁺ region 22 side higher than the signal level input to the spiral electrode 10 side.

In FIG. 12B, a reverse bias voltage is forcibly applied between the input / output electrodes 14 and 36. The application of the reverse bias voltage is applied to the bias power supply 28.
Done by. Further, in the LC element 300 of the present embodiment, signals are input to both the input / output electrodes 14 and 36. Therefore, in addition to the capacitor 30 used in the first embodiment, the capacitor 40 is provided on the input / output electrode 36 side. Connecting.

In this way, the two capacitors 30, 40
By using, the DC component is removed from the signals input to the two input / output electrodes 14 and 36, and only the AC component of each signal is superimposed on the reverse bias voltage applied from the bias power supply 28. LC of this example
It is input to the element 300.

Therefore, the LC device 300 of the present embodiment.
Can surely apply a reverse bias voltage to the pn junction layer 26, and a capacitor is formed in a distributed constant manner together with the inductor. As a result, good damping characteristics can be obtained.

Further, FIG. 12C is a diagram in which the bias power source 28 in FIG. 12B is replaced with a variable bias power source 34. That is, the reverse bias voltage can be variably set by the variable bias power supply 34, which allows the capacitance C of the pn junction layer 26 to be changed, that is, the characteristic value of the entire LC element 300 to be changed.

Although the spiral electrode 10 is used as one of the signal input / output paths in the above-described embodiment, the spiral electrode 10 is removed and the p ⁺ region 20 and the n ⁺ region 22 forming the pn junction layer 26 are formed. Both of them may be used as signal input / output paths.

FIG. 13 is a diagram showing a modification of the LC element of this embodiment, showing an LC element that does not use spiral electrodes. The LC element shown in the figure has a pn junction layer 26.
Of the input / output electrodes 14 and 16 at both ends of the n ⁺ region 22 constituting
And the input / output electrodes 3 are provided at both ends of the p ⁺ region 20.
6 and 38 are provided respectively. This LC element is p ⁺
Both the region 20 and the n ⁺ region 22 are signal input / output paths,
At the same time, each functions as a conductor for an inductor. In addition, the pn junction layer 2 formed by these
6 functions as a distributed constant capacitor, as shown in FIG.
Similar to the LC element 300 shown in FIG. 1, it is a four-terminal common mode element having good attenuation characteristics and advantages such as easy manufacture.

Fourth Embodiment Next, an LC device according to a fourth embodiment of the present invention will be specifically described with reference to the drawings.

The LC devices 100 and 20 of the above-mentioned respective embodiments
In each of 0 and 300, the spiral electrode 10 was formed of one conductor, but in the LC element 400 of this embodiment, the spiral electrode 10 is divided into a plurality of (for example, three) divided electrode pieces 10-1 ,. It is characterized in that it is divided into 10-2 and 10-3.

FIG. 14 is a plan view of the LC device of the fourth embodiment. As shown in the figure, the LC device 40 of the fourth embodiment
0 indicates the spiral electrode 10 used in the LC element 100 shown in FIG. 1 as three divided electrode pieces 10-1, 10-.
The p ⁺ region 20 connected to each divided electrode piece is also divided into three. These divided electrode pieces 10-having a spiral shape as a whole
A ground electrode 18 is connected to each of 1 to 10-3, and one of the inductors formed by each of the divided electrode pieces 10-1 to 10-3 by grounding the three ground electrodes 18 is connected. The end is grounded. Alternatively, by connecting the three ground electrodes 18 to a power source having a fixed potential, one end of the inductor formed by each of the divided electrode pieces 10-1 to 10-3 has the fixed potential.

FIG. 15 is a diagram showing an equivalent circuit of the LC element 400 of the fourth embodiment. As shown in FIG.
The entire n ⁺ region 22 of the n junction layer 26 has an inductance L.
1 and the divided electrode pieces 10-1, 10-2, and 10-3 function as inductors having the inductances L3, L4, and L5, respectively. Then, the n ⁺ region 22 and each divided electrode piece 10-
The pn junction layer 26 between each of 1 to 10-3 functions as a capacitor having capacitances C2, C3 and C4, and these capacitors exist in a distributed constant manner.

Further, FIG. 15B and FIG.
A circuit for applying a forced reverse bias voltage or a variably settable reverse bias voltage is shown. These drawings correspond to FIGS. 3B and 3C. With such a circuit configuration, the pn junction layer 26 can be reliably operated as a capacitor,
Or by changing the capacity of this capacitor, LC
The characteristics of the element 400 as a whole can be changed.

Further, in the LC element 400 of this embodiment, the self-inductances L3, L4 and L5 of the divided electrode pieces 10-1, 10-2 and 10-3 are small. Therefore, influence on the characteristics of the entire LC element 400 according to these self-inductance is small, the capacitance C2, C3, C4 and the overall LC element by the characteristics of the n + region 22 is an inductance L1 and a distributed constant formed with It will be almost decided.

In the above-described embodiment, the spiral n ⁺ region 22 is used as the signal input / output path and the spiral electrode 10 is divided and used. On the contrary, the spiral electrode 10 is used as the signal input / output path. Do with pn
The entire bonding layer 26 may be divided into a plurality of parts.

FIG. 16 is a diagram showing a modification of the LC element of this embodiment, and shows a case where the spiral electrode 10 side is used as a signal input / output path. The LC element shown in the figure has input / output electrodes 14 and 16 at both ends of the spiral electrode 10.
With connecting, n of the pn junction layer 26 to split, it is included in each of the divided pieces 26-1, 26-2, and 26-3
The ground electrode 18 is provided at one end of the + region 22. This LC element is obtained by exchanging the functions of the n + region 22 and the spiral electrode 10 in the LC element 400 shown in FIG. 14, and has substantially the same advantages as the LC element shown in FIG.

FIG. 17 is a diagram showing another modification of the LC element of this embodiment, showing an LC element not using the spiral electrode 10 shown in FIG. The LC element shown in the figure has an input / output electrode 1 at both ends of the n ⁺ region 22.
4, 16 are connected, and only the p ⁺ region 20 is divided and divided into three parts.
The ground electrode 18 is provided at one end of each of 0-2 and 20-3.
Is provided. In this LC element, the n ⁺ region 22 and each of the divided pieces 20-1 to 20-3 function as inductor conductors, and the pn junction layer 26 between them functions as a distributed constant capacitor. Therefore, similar to the LC element 400 shown in FIG. 14, it has good attenuation characteristics and has advantages such as easy manufacturing.

Other Examples Next, LC elements according to other examples of the present invention will be specifically described with reference to the drawings.

FIG. 18 and FIG. 19 are diagrams showing the outline of the case where terminals are attached using the chemical liquid phase method. FIG.
Is a plan view of an LC element 500 of this embodiment corresponding to FIG. 1 and the like, as shown in the figure, the pn junction layer n ⁺ region 2
The input / output electrodes 14 and 16 are provided at both ends of 2, but the ground electrode 18 is not provided at one end of the spiral electrode 10. After the semiconductor substrate having such a structure is separated into individual LC elements 500, as shown in FIG. 19 showing a cross section taken along the line CC in FIG. 19, all the surfaces of the individually separated chips (elements) are separated. A silicon oxide film 42 is formed as an insulating film by a chemical liquid phase method. After that, the silicon oxide film 42 on the end portions of the first and second spiral electrodes 10 and 12 is removed by etching to make a hole, and the hole is sealed with solder 44 to the extent that it rises on the surface, so that the protruding solder 42 can be brought into direct contact with the land or the like of the printed wiring board, which is convenient for surface mounting.

Incidentally, another insulating material such as synthetic resin may be used for the protective film on the element surface, and a laser beam may be used for perforating the protective film.

FIG. 20 shows the LC device 1 of each of the above-mentioned embodiments.
It is explanatory drawing at the time of forming 00 etc. as a part of LSI etc. As shown in the figure, each of the LC elements 10 described above is connected to a line 48 of various signals or a power source on the semiconductor chip 46.
Incorporate by inserting 0 etc. In particular, the LC element 100 and the like of each of the above-described embodiments can be manufactured at the same time in the process of forming various circuits on the semiconductor chip 46, so that there is an advantage that the wiring process and the like in the subsequent process are unnecessary.

FIG. 21 shows the LC device 1 of each of the above-mentioned embodiments.
It is a figure which shows the example which connected the buffer to the output side, such as 00. In general, the n ⁺ region 22 and the p ⁺ region 20 have a larger specific resistance than a metal such as aluminum. Therefore, when these are used as a signal input / output path, signal attenuation occurs. Therefore, connect a buffer to these outputs,
It becomes a practical element by amplifying the voltage level of the attenuated signal. Further, when the length of the spiral electrode 10 is made long or the line width is made thin, signal attenuation occurs even when the spiral electrode 10 is used as a signal input / output path. It becomes a practical element by connecting a buffer.

FIG. 16A shows a MOS-F as a buffer.
The case where the source follower circuit 50 which consists of ET and a resistor is used is shown. M that constitutes the source follower circuit 50
Although the OS-FET has a slightly different configuration from the LC element of each of the above-described embodiments, it can be formed on the same semiconductor substrate, and therefore the entire OS including the source follower circuit 50 is integrated as an LC element. Can be formed.

Further, FIG. 11B shows a case where an emitter follower circuit 52 composed of two bipolar transistors and a resistor is used as a buffer. Since the bipolar transistor forming the emitter follower circuit 52 has the same structure as the LC element of each of the above-described embodiments, the whole including the emitter follower circuit 52 can be integrally formed as an LC element. .

21A and 21B show the case where the LC element 100 of the first embodiment is used as an example, the same applies to the case where the LC elements 200 to 400 of the other embodiments are used. is there. However, the LC element 30 of the third embodiment
Since 0 uses both the n ⁺ region 22 and the spiral electrode 10 as a signal input / output path, the source follower circuit 50 or the emitter follower circuit 52 described above is connected to the output side of either or both of them.

By thus providing the buffer on the output side, the frequency component of a relatively wide band is removed by the LC element 100 and the like, and at the same time, the signal level attenuated by the n ⁺ region 22 or the spiral electrode 10 is reduced. It is possible to obtain an output signal that is restored by amplification and has a good SN ratio.

FIG. 22 is a diagram showing an example in which a level conversion circuit is connected to the output side of the LC element of each of the above-mentioned embodiments. FIG. 1A shows a case where two emitter follower circuits 54 and 56 are connected in series as a level conversion circuit. FIG. 2B shows a case where two source follower circuits 58 and 60 are connected in series as a level conversion circuit. By connecting the level conversion circuit to the output side in this way, the voltage level of the signal attenuated by passing through the n ⁺ region 22 of the LC element or the spiral electrode 10 is amplified, and a predetermined level conversion or level correction is performed. It can be done easily.

The point that these level conversion circuits can be integrally formed on the same semiconductor substrate as the LC element of each embodiment is the same as in the case of the buffer described above.

In the LC element 300 of the third embodiment, the level conversion circuit shown in FIGS. 22A and 22B is connected to both output sides of two signal input / output paths, or either one of them is connected. Can only be connected to the output side of.

FIG. 23 shows the LC element 1 of each of the above-mentioned embodiments.
It is a figure which shows an example at the time of comprising a voltage control oscillator (VCO) using 00 etc. As shown in the figure, an amplifier 61 is connected to the output side of the LC element of each of the embodiments described above, and the output of this amplifier 61 is fed back to the input side of the LC element. The oscillation operation is performed by forming such a feedback loop. Moreover, the oscillation frequency is arbitrarily set within a certain range by using the control voltage applied from the outside to the input / output electrode 14 side as the reverse bias voltage, that is, by changing the capacitance existing in a distributed constant accordingly. Can be changed to

The present invention is not limited to the above embodiments, and various modifications can be made within the scope of the gist of the present invention.

For example, in each of the above-mentioned embodiments, p
The spiral electrode 1 is formed on the surface of the p ⁺ region 20 of the n-junction layer 26.
Although 0 is formed by directly contacting with each other, an insulating layer 62 such as SiO ₂ may be interposed between the spiral electrode 10 and the p ⁺ region 20 of the pn junction layer 26.

FIG. 24 is a diagram showing a sectional structure in the case where an insulating layer 62 is formed between the spiral electrode 10 and the p ⁺ region 20 of the pn junction layer 26. In this case, the reverse bias voltage is directly applied to the pn junction layer 26, and the input / output electrode 14 provided at one end of the spiral electrode 10 is also provided.
A signal can be directly input to (or 16). That is, the spiral electrode 10 and the p ⁺ region 20 arranged with the insulating layer 62 interposed therebetween function as a capacitor, and the capacitor 30 for removing the DC component as shown in FIG. Become.

Further, in each of the above-described embodiments, since the spiral electrode 10 is formed by vapor-depositing aluminum or the like in the last step, the spiral electrode 10 has a protruding cross-sectional shape as shown in FIG. However, the spiral electrode 10 may be embedded in the pn junction layer 26 as shown in FIG. 24 by forming a spiral groove in a part of the pn junction layer 26 by etching or the like. By doing so, it is possible to form a substantially flat LC element without unevenness on the surface side, and the assembling work and the like become easy.

In each of the above-mentioned embodiments, p-S
Although the LC element was formed using the pnp structure including the i-substrate 24, the npn structure may be used in the same manner.
FIG. 26 is a diagram showing a partial cross section of an LC element having an npn structure. With such a structure, pn
It is necessary to reverse the polarity of the reverse bias voltage applied to the bonding layer. FIG. 27 is a diagram showing a configuration in which the polarity of the reverse bias voltage applied in this manner is reversed,
A circuit corresponding to FIG. 3C is shown.

In each of the above-described embodiments, the spiral electrodes 10 and p having a substantially circular spiral shape are used.
Although the n-junction layer 26 has been considered, it may have a square shape or another spiral shape as long as it has a spiral shape as a whole.

In each of the above embodiments, LC
Although the advantage that the element 100 or the like can be formed as a part of the LSI or the like has been described, it is not always necessary to form it as a part of the LSI or the like, and the input / output electrodes 14, Each of the 16 and the ground electrode 18 may be provided with a terminal, or the chemical liquid phase method as shown in FIGS. 18 and 19 may be provided to form a single element. In this case, a plurality of LCs are formed on the same semiconductor substrate.
If the devices 100 and the like are formed at the same time and then the semiconductor substrate is separated and each LC device 100 and the like is provided with terminals, mass production can be easily performed.

Further, in the above-mentioned first embodiment, etc.,
The ground electrode 1 is provided on one end of the spiral electrode 10 on the outer peripheral side.
However, the ground electrode 18 may be provided at one end on the inner peripheral side. Further, the input / output electrodes 14 and 16 and the ground electrode 18 do not necessarily have to be provided at the outermost end, and their mounting positions may be displaced as necessary.

Further, the LC device 100 of each of the above-mentioned embodiments.
Etc., the capacitance of a capacitor existing in a distributed constant also changes by changing the reverse bias voltage.
The frequency characteristics of the element can be variably controlled. Therefore, by using the LC element 100 or the like as a part of the circuit, it is possible to easily configure a tuning circuit, a modulation circuit, an oscillation circuit, a filter and the like.

Further, the LC device 100 of each of the above-mentioned embodiments.
In the above description, the case where the pn junction layer 26 is formed on the p-Si substrate 24 has been described as an example. However, when another type of semiconductor such as germanium is used, or when an amorphous material such as amorphous silicon is used. May be

[0140]

As described above, according to the first aspect of the present invention, the signal input to at least one of the spiral-shaped electrode and the second region of the pn junction layer is a distributed constant constant inductor. And is propagated through the capacitor, and good attenuation characteristics are obtained over a wide band. Further, this element can be manufactured by forming a spiral pn junction layer on the semiconductor substrate and further forming a spiral electrode on the surface side thereof, which makes the manufacturing very easy. Moreover, since this LC element is formed on a semiconductor substrate, it can be formed as a part of an IC or LSI. Assembly work can be omitted.

According to the second aspect of the invention, each of the spirally shaped electrodes having different lengths and the second region of the pn junction layer functions as an inductor, and is formed by the pn junction layer between them. Since the capacitors are present in a distributed constant manner, they have good attenuation characteristics over a wide band as in the case of the above-mentioned claim 1, are easy to manufacture, and can be formed as a part of the substrate.

Further, according to the invention of claim 3, one of the above-mentioned spiral-shaped electrode and the pn junction layer is divided into a plurality of pieces, and a part of these divided pieces is electrically connected for use. Therefore, by using the other side which is not divided as a signal input / output path, it becomes a distributed constant type LC element having characteristics different from those of the above-mentioned LC element. In particular, since the inductance of each segment is small, it is possible to obtain an LC element that is less affected by the inductance of each segment.

According to the fourth aspect of the invention, the first and second input / output electrodes are provided near both ends of either one of the spiral-shaped electrode and the second region of the pn junction layer. By providing the ground electrode near the other end, the electrode or the second region on the side where the first and second input / output electrodes are provided is used as a signal input / output path.
A terminal type LC element can be easily formed.

In addition, according to the invention of claim 5, claim 4
By providing the third and fourth input / output electrodes on the other side of the electrode or both ends of the second region, a 4-terminal common mode type LC element can be easily formed.

Further, according to the invention of claim 6, a signal having a voltage level such that a reverse bias is applied to the pn junction layer is input to at least one of the spiral electrode and the second region of the pn junction layer. By doing so, a distributed constant capacitor can be reliably formed between the pn junctions.

According to the invention of claim 7, the pn
A reverse bias voltage for the junction layer is applied by a bias circuit, and a DC component removal circuit is provided corresponding to this, and the signal from which the DC component has been removed from the input signal becomes the reverse bias voltage applied from the bias circuit. It is superimposed and input. As a result, the pn junction layer can be used with a complete reverse bias, and the spiral pn junction layer can be reliably used as a capacitor.

Further, according to the invention of claim 8, an insulating layer is formed between the spiral electrode and the first region of the pn junction layer, and a reverse bias voltage is applied to the pn junction layer by a bias circuit. Since it is applied, the pn junction layer can be reliably used as a capacitor, and as a whole, it operates as an LC element having a good attenuation characteristic in a wide band. Further, in this case, since the spirally-shaped electrode and the pn junction layer are separated from each other in terms of direct current by the insulating layer, the direct current component removing circuit as used in the above-mentioned claim 7 can be omitted.

According to the ninth aspect of the invention, the reverse bias voltage applied by the bias circuit described above can be variably set. As a result, the spiral pn
The capacity of the bonding layer can be changed arbitrarily, the damping characteristics,
That is, the frequency characteristic can be variably controlled as needed.

According to the tenth aspect of the invention, the LC element according to each of the above-mentioned aspects is formed on a part of the substrate so as to be inserted into the signal line or the power supply line. As a result, it can be manufactured integrally with other components on the semiconductor substrate, which facilitates the manufacturing and eliminates the work of assembling the components in the subsequent process.

According to the invention of claim 11, after forming the above-mentioned LC element on the semiconductor substrate, an insulating film is formed on the entire surface by the chemical liquid phase method, and then etching or etching is performed on a part of this insulating film. A hole is formed by irradiating a laser beam, and solder is put in the hole to attach a terminal. Therefore, it is possible to easily manufacture the surface mount type LC element, and the surface mount type LC element also facilitates the assembling work of the LC element.

In the inventions of claims 12 to 21, the spiral electrode used in the invention of each of the above claims is omitted, and the function of this electrode is provided in the first region of the pn junction layer. Is characterized by. That is, each of the first and second regions of the pn junction layer functions as an inductor, and a distributed constant capacitor is formed by the pn junction layer between them. Similarly to the above, there are effects such as having good damping characteristics and being easy to manufacture. Moreover, since the spiral electrode is not formed on the semiconductor surface, the step of forming this electrode is unnecessary, and further, the manufacturing is facilitated, and the semiconductor surface can be effectively used for other purposes.

According to the invention of claim 22 or claim 23, the LC element of each invention described above can be manufactured by applying a general semiconductor manufacturing technique,
It is possible to reduce the size or cost, and it is also possible to mass-produce a plurality of pieces at the same time.

[Brief description of drawings]

FIG. 1 is a plan view of an LC device according to a first embodiment of the present invention.

FIG. 2 is an enlarged cross-sectional view taken along the line AA of FIG.

FIG. 3 is a diagram showing an equivalent circuit of the LC element of the first embodiment.

FIG. 4 is a diagram showing a manufacturing process of the LC element of the first embodiment.

FIG. 5 is a diagram showing a modification of the LC element of the first embodiment.

FIG. 6 is a plan view of an LC device according to a second embodiment.

FIG. 7 is a diagram showing an equivalent circuit of the LC element of the second embodiment.

FIG. 8 is a diagram showing a modification of the LC element of the second embodiment.

FIG. 9 is a diagram showing another modification of the LC element of the second embodiment.

FIG. 10 is a diagram showing another modification of the LC element of the second embodiment.

FIG. 11 is a plan view of an LC device according to a third embodiment.

FIG. 12 is a diagram showing an equivalent circuit of the LC element of the third embodiment.

FIG. 13 is a diagram showing a modification of the LC element of the third embodiment.

FIG. 14 is a plan view of an LC device according to a fourth embodiment.

FIG. 15 is a diagram showing an equivalent circuit of the LC device of the fourth embodiment.

FIG. 16 is a diagram showing a modification of the LC element of the fourth embodiment.

FIG. 17 is a diagram showing another modification of the LC element of the fourth embodiment.

FIG. 18 is a diagram schematically showing a case where terminals are attached using a chemical liquid phase method.

FIG. 19 is a diagram schematically showing a case where terminals are attached using a chemical liquid phase method.

FIG. 20 is an explanatory diagram of a case where the LC element of each example is formed as a part of an LSI or the like.

FIG. 21 is a diagram showing an example in which a buffer is connected to the output side of the LC element of each example.

FIG. 22 is a diagram showing an example in which a level conversion circuit is connected to the output side of the LC element of each example.

FIG. 23 is a diagram showing an example of a case where a voltage controlled oscillator is configured using the LC element of each example.

FIG. 24 is a diagram showing a cross-sectional structure when an insulating layer is formed between a pn junction layer and a spiral electrode.

FIG. 25 is a diagram showing a cross-sectional structure when a spiral electrode is embedded.

FIG. 26 is a diagram showing a partial cross section of an LC element having an npn structure.

FIG. 27 is a diagram showing a configuration in which the reverse bias voltage to be applied has opposite polarities.

[Explanation of symbols]

10 spiral electrode 14, 16 input / output electrode 18 earth electrode 20 p ⁺ region 22 n ⁺ region 24 p-Si substrate 25 epitaxial layer 26 pn junction layer 28 bias power source 30, 32 capacitor 34 variable bias power source

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ identification code FI H03H 7/34 H01F 15/00 D (56) References JP-A-4-239140 (JP, A) JP-A-5-218304 ( JP, A) JP-A-5-315545 (JP, A) JP-B 40-6817 (JP, B1) JP-B 54-9474 (JP, B2) JP-B 49-44777 (JP, B2) (58) ) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 21/822 H01F 27/00 H01L 27/04 H01P 1/00 H01P 11/00 H03H 7/34

Claims (23)

(57) [Claims] 1. A spiral-shaped electrode formed on the surface of a semiconductor substrate, and a first layer formed of a p-layer or an n-layer formed at a position along a part of the semiconductor substrate along the spiral-shaped electrode.
And a second region which is a region of opposite conductivity type to the first region, and the first region is provided in the second region.
And an inductor formed by each of the spiral-shaped electrode and the second region forming a part of the pn-junction layer, and each of these inductors. Corresponding to p
An LC element characterized in that a capacitor formed of an n-junction layer exists in a distributed constant, and at least one of the spiral electrode and the second region is used as a signal input / output path. 2. The spiral electrode and the pn junction according to claim 1, wherein a length of at least a second region of the pn junction layer is set longer or shorter than that of the spiral electrode. LC characterized in that it partially corresponds to the second region of the layer
element. 3. The spiral electrode according to claim 1, wherein the spiral electrode is divided into a plurality of parts, or
An LC element, characterized in that at least a second region of the n-junction layer is divided into a plurality of portions, and a part of each divided piece is electrically connected. 4. The first and second electrodes according to claim 1, wherein the first and second electrodes are provided near both ends of one of the spiral-shaped electrode and the second region of the pn junction layer.
An input / output electrode, and a ground electrode provided near the other end of the second region of the pn junction layer and the spiral-shaped electrode, and any one of the first and second input / output electrodes While inputting a signal from one side and outputting a signal from the other side,
An LC element, wherein the ground electrode is connected to a power source having a fixed potential or grounded. 5. The first and second input / output electrodes provided near both ends of either the spiral electrode or the second region of the pn junction layer according to claim 1 or 2, A spiral-shaped electrode and third and fourth input / output electrodes provided in the vicinity of the other end of the second region of the pn-junction layer, wherein the spiral-shaped electrode and the pn-junction layer Two
An LC element characterized by being used as a common mode type element in which each of the regions is used as a signal input / output path. 6. The reverse bias voltage level signal of the pn junction layer to at least one of the spiral-shaped electrode and the second region of the pn junction layer according to claim 1. An LC device characterized by inputting. 7. The bias circuit for applying a predetermined reverse bias voltage to the pn junction layer according to claim 1, and a signal obtained by removing a direct current component from an input signal to the spiral electrode and the pn junction. An LC element, further comprising: a DC component removal circuit that inputs to at least one of the second regions of the bonding layer. 8. The insulating layer is formed between the spiral electrode and the first region of the pn junction layer, and a predetermined reverse bias is applied to the pn junction layer. An LC device comprising a bias circuit for applying a voltage. 9. The pn junction layer according to claim 7, wherein the bias circuit can change a reverse bias voltage applied to the pn junction layer, and the reverse bias voltage applied to the pn junction layer is changed. L characterized by arbitrarily changing the capacitance of
C element. 10. The LC element according to claim 1 is formed as a part of a substrate, and at least one of the spiral electrode and the second region of the pn junction layer is used as a signal line or a power supply line. A semiconductor device characterized by being inserted and integrally molded. 11. The semiconductor device according to claim 1, wherein the pn junction layer is formed on a semiconductor substrate, the spiral electrode is formed on the pn junction layer, and the entire surface of the semiconductor substrate is formed by a chemical liquid phase method. An LC element characterized in that an insulating film is formed, a part of the insulating film is removed by etching or laser light irradiation to form a hole, and the hole is sealed to the extent that it rises on the surface for terminal attachment. . 12. The semiconductor substrate is formed on a part of the semiconductor substrate,
A spiral pn junction layer including a first region and a second region having a conductivity type opposite to that of the first region, the inductor formed by each of the first and second regions, and the pn junction. And a capacitor formed by the layers are distributed constant, and the first and second capacitors
An LC element, characterized in that at least one of the regions is used as a signal input / output path. 13. The first region according to claim 12, wherein the second region is set to be longer or shorter than the first region forming the pn junction layer.
2. An LC element, characterized in that a region of 2 and a region of 2 are partially corresponded to each other. 14. The method according to claim 12 or 13, wherein either one of the first region and the second region forming the pn junction layer is divided into a plurality of portions, and a part of each divided piece is electrically separated. LC element characterized by being connected. 15. The first and second input / output terminals according to claim 12, wherein the first and second input / output terminals are provided near both ends of either one of the first region and the second region forming the pn junction layer. An electrode and a ground electrode provided near one end of the other of the first region and the second region forming the pn junction layer, and one of the first and second input / output electrodes An LC element, wherein a signal is input from the output terminal and a signal is output from the other input terminal, and the ground electrode is connected to or grounded with a power source having a fixed potential. 16. The first and second electrodes according to claim 12 or 13, provided near both ends of either one of the first region and the second region forming the pn junction layer.
Of the first and second regions forming the pn junction layer, and third and fourth input / output electrodes provided near both ends of the other of the first region and the second region forming the pn junction layer. An LC element used as a common mode type element having a signal input / output path in each of the first and second regions. 17. The signal of the reverse bias voltage level of the pn junction layer according to claim 12, wherein at least one of a first region and a second region forming the pn junction layer has a reverse bias voltage level. LC element characterized by inputting. 18. The bias circuit for applying a predetermined reverse bias voltage to the pn junction layer according to claim 12, and a signal obtained by removing a direct current component from an input signal in the first and second pn junction layers. An LC element, further comprising: a DC component removal circuit that is input to at least one of the second regions. 19. The pn junction layer according to claim 18, wherein the bias circuit can change a reverse bias voltage applied to the pn junction layer, and the pn junction layer has the same by changing a reverse bias voltage applied to the pn junction layer. L characterized by changing the capacitance arbitrarily
C element. 20. The LC element according to claim 12 is formed as a part of a substrate, and at least one of the first and second regions of the pn junction layer is inserted into a signal line or a power supply line. A semiconductor device characterized by being integrally molded. 21. The pn junction layer according to claim 12, wherein the pn junction layer is formed on a semiconductor substrate, and an insulating film is formed on the entire surface of the semiconductor substrate by a chemical liquid phase method. An LC element, characterized in that a portion is removed by etching or laser light irradiation to form a hole, and the hole is sealed with solder so as to be raised to the surface for terminal attachment. 22. A semiconductor substrate comprising a p-layer or an n-layer.
The spiral-shaped first region and
The second region that becomes the reverse conductivity type region and functions as an inductor
Vortex in which the capacitor is distributedly constant.
A first step of forming a winding-shaped pn junction layer, and a step of forming an pn junction layer on the surface of the semiconductor substrate, facing the first region;
Second forming a spirally shaped electrode that functions as a ductor
And a third step of forming a wiring layer connected to both ends or one end of each of the spiral-shaped electrode and the second region of the pn junction layer. Manufacturing method. 23. A first region having a spiral shape on a semiconductor substrate and a region of opposite conductivity type to the first region, which is an inductor.
A second region that functions as a capacitor, and a capacitor
Forming a spiral pn junction layer in which the distribution constants exist, and forming a wiring layer connected to both ends or one end of each of the first and second regions of the pn junction layer. A second step; and a method for manufacturing an LC element, comprising: