JP3469688B2 - Method for manufacturing semiconductor heat treatment member - Google Patents
Method for manufacturing semiconductor heat treatment memberInfo
- Publication number
- JP3469688B2 JP3469688B2 JP26553895A JP26553895A JP3469688B2 JP 3469688 B2 JP3469688 B2 JP 3469688B2 JP 26553895 A JP26553895 A JP 26553895A JP 26553895 A JP26553895 A JP 26553895A JP 3469688 B2 JP3469688 B2 JP 3469688B2
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- purity
- silicon carbide
- heat treatment
- core tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010438 heat treatment Methods 0.000 title claims description 40
- 239000004065 semiconductor Substances 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 title claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 24
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 23
- 239000007789 gas Substances 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 229910000039 hydrogen halide Inorganic materials 0.000 claims description 2
- 239000012433 hydrogen halide Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 238000000746 purification Methods 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 238000005470 impregnation Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 229910021426 porous silicon Inorganic materials 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- -1 Cl 2 Chemical class 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000026030 halogenation Effects 0.000 description 1
- 238000005658 halogenation reaction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000006233 lamp black Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Description
【０００１】[0001]
【発明の属する分野】この発明は、半導体ウエハを熱処
理する際に使用される半導熱処理用部材、例えば炉芯
管、ライナー管、ウエハボートなどの製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor heat-treating member used for heat-treating a semiconductor wafer, such as a furnace core tube, a liner tube or a wafer boat.
【０００２】[0002]
【従来の技術】半導体装置の製造において、デポジショ
ン、拡散などの加熱工程は非常に重要である。従来、こ
うした加熱処理は第３図に示すような加熱炉が用いられ
るのが一般的であった。なお、ここに用いられる半導体
熱処理用部材の一例として特に炉芯管を挙げて次に説明
する。2. Description of the Related Art In manufacturing semiconductor devices, heating processes such as deposition and diffusion are very important. Conventionally, a heating furnace as shown in FIG. 3 has generally been used for such heat treatment. In addition, a furnace core tube will be specifically described as an example of the semiconductor heat treatment member used here, and will be described below.
【０００３】図３で１は従来から使用されいる加熱炉で
ある。加熱炉１の外周は断熱材２で覆われ、その内側に
発熱体３があって、さらにその中にライナー管４が嵌装
されている。このライナー管４は、アルミナ、ムライ
ト、炭化珪素、Ｓｉ−ＳｉＣなどから形成されている。
ライナー管４の中空部には石英ガラス製炉芯管５が配置
されている。ライナー管４と炉芯管５の間には若干の間
隙が設けられている。炉芯管５の中には半導体ウエハ６
を装着したウエハボート７が挿入されている。８はウエ
ハボートを載置するパドルである。In FIG. 3, reference numeral 1 denotes a conventional heating furnace. The outer circumference of the heating furnace 1 is covered with a heat insulating material 2, a heating element 3 is provided inside the heating material 2, and a liner tube 4 is fitted therein. The liner tube 4 is made of alumina, mullite, silicon carbide, Si-SiC, or the like.
A quartz glass furnace core tube 5 is arranged in the hollow portion of the liner tube 4. A slight gap is provided between the liner tube 4 and the furnace core tube 5. A semiconductor wafer 6 is provided in the furnace core tube 5.
The wafer boat 7 mounted with is attached. Reference numeral 8 is a paddle on which a wafer boat is mounted.
【０００４】上記加熱炉を用いての半導体ウエハ６の熱
処理は、発熱体３に通電して発生する熱をライナー管４
から炉芯管５へ均一に放射し、炉芯管５内の半導体ウエ
ハを均一に加熱するものである。In the heat treatment of the semiconductor wafer 6 using the above heating furnace, the heat generated by energizing the heating element 3 is generated by the liner tube 4.
Is uniformly radiated to the furnace core tube 5 to uniformly heat the semiconductor wafer in the furnace core tube 5.
【０００５】しかしながら、半導体ウエハの拡散工程の
ように加熱温度が高くしかも処理時間が長いと、石英ガ
ラスの粘性が大幅に低下するために石英ガラス製炉芯管
の高温均熱部の断面が楕円形に変形することがあった。
このように炉芯管が変形すると、半導体ウエハボートの
出入れが困難となる上に、炉芯管内でガスの流れや温度
分布が不均一になり、半導体表面での不純物濃度にばら
つきが生じる事となっていた。However, when the heating temperature is high and the processing time is long as in the semiconductor wafer diffusion process, the viscosity of the quartz glass is significantly reduced, and therefore the cross section of the high temperature soaking part of the quartz glass furnace core tube is elliptical. It was sometimes transformed into a shape.
When the furnace core tube is deformed in this way, it becomes difficult to move the semiconductor wafer boat in and out, and the gas flow and temperature distribution in the furnace core tube become non-uniform, resulting in variations in the impurity concentration on the semiconductor surface. It was.
【０００６】こうしたことで最近は、ライナー管と炉芯
管を兼ねた高純度のＳｉ−ＳｉＣ系の炉芯管が使用さる
傾向にある。Ｓｉ−ＳｉＣ系の炉芯管は、半導体ウエハ
の不純物拡散のための高温加熱、冷却サイクルにおいて
も十分な耐熱衝撃性をもち、また機械的強度もあって優
れた材料である。しかし、従来のＳｉ−ＳｉＣ系の半導
体処理部材は石英ガラス製炉芯管と比較して純度が劣
り、比較的高純度といわれるものにあっても、半導体ウ
エハの汚染源となる不純物の含有量が多く、この点が大
きな問題点とされてきた。For these reasons, recently, there has been a tendency to use a high-purity Si-SiC-based furnace core tube that also serves as a liner tube and a furnace core tube. The Si-SiC-based furnace core tube is an excellent material having sufficient thermal shock resistance even in a high temperature heating / cooling cycle for impurity diffusion of a semiconductor wafer and also having mechanical strength. However, the conventional Si-SiC-based semiconductor processing member is inferior in purity as compared with the quartz glass furnace core tube, and even if it is said to have a relatively high purity, the content of impurities as a contamination source of the semiconductor wafer is high. In many cases, this point has been regarded as a big problem.
【０００７】炉芯管をＳｉ−ＳｉＣで製造するに当たっ
ては、原料の炭化珪素粉の酸洗浄、成形、純化処理、高
純度Ｓｉの含浸、最終の酸処理といった工程を経て製造
されることが特公平１ー３６９８１号により公知である
が、こうした清浄化処理によっても炭化珪素質炉芯管に
なお微量の不純物が含有されていた。[0007] When manufacturing a furnace core tube from Si-SiC, it is special that it is manufactured through steps such as acid cleaning of raw material silicon carbide powder, molding, purification treatment, impregnation of high-purity Si, and final acid treatment. As is known from Japanese Patent Publication No. 1-36981, the silicon carbide type furnace core tube still contained a trace amount of impurities by such a cleaning treatment.
【０００８】Ｓｉを含浸する前の純化処理は、通常、高
温でＣｌ2 、ＨＣｌなどのガス又は酸の液を流すことに
よって長時間行われるが、こうした純化処理によっても
炉芯管などの表層部が純化されるだけで、その内部の不
純物までも除去することは困難であった。[0008] purification treatment prior to impregnation of Si is usually long carried out by passing the liquid gas or acids, such as Cl 2, HCl at elevated temperature, the surface layer portion of such even furnace tube by such purification treatment However, it was difficult to remove even the impurities inside it, since it was only purified.
【０００９】また、上記の高純度処理を行ってから高純
度Ｓｉを含浸を行うためには、通常、純化処理の済んだ
炉芯管を一度処理炉から取り出し、これを所定の場所に
移動しなければならないが、そうしたハンドリングの場
合にも炉芯管が汚染され、高純度製品の製造を困難とし
ていた。Further, in order to impregnate high-purity Si after performing the above-mentioned high-purity treatment, usually, the furnace core tube after the purification treatment is once taken out from the treatment furnace and moved to a predetermined place. Although it must be done, even in such handling, the furnace core tube was contaminated, which made it difficult to manufacture high-purity products.
【００１０】特に、原料の炭化珪素質成形体の内部に封
じ込められている不純物は、その後の純化処理によって
これを除去することは著しく困難であった。そして、半
導体ウエハの熱処理のために炉芯管を加熱することによ
って、こうした不純物は内部から放出されこれが半導体
ウエハを汚染していた。In particular, it is extremely difficult to remove impurities contained in the raw material silicon carbide compact by the subsequent purification treatment. Then, by heating the furnace core tube for heat treatment of the semiconductor wafer, such impurities are released from the inside, which contaminates the semiconductor wafer.
【００１１】かかる問題を解決するために、１６００℃
以上の温度で不活性ガスをキャリアガスとして、ハロゲ
ンまたはハロゲン化水素で半導体処理用部材を処理し、
その後これに高純度Ｓｉを含浸することが公知となって
いるが、こうした処理をするものあってもＳｉを含浸す
るまでに汚染されることがあって、これまで十分に高純
度なＳｉ−ＳｉＣ系半導体処理用部材が得られていない
のが実情である。In order to solve such a problem, 1600 ° C.
Using the inert gas as a carrier gas at the above temperature, the semiconductor processing member is treated with halogen or hydrogen halide,
After that, it is known that this is impregnated with high-purity Si, but even if it is subjected to such a treatment, it may be contaminated before impregnating with Si. The fact is that no system-based semiconductor processing member has been obtained.
【００１２】[0012]
【発明が解決しようとす課題】この発明は拡散炉などの
Ｓｉ−ＳｉＣ系半導体処理用部材などの洗浄と、高純度
Ｓｉ含浸を同一の炉内で行うことによって、これを炉外
でハンドリングすることによる汚染を回避して従来より
も一層高純度の半導体処理用部材を得ようとするもので
あり、また製造におけるランニングタイムをより短縮し
ようとするものである。SUMMARY OF THE INVENTION According to the present invention, cleaning of a Si-SiC type semiconductor processing member such as a diffusion furnace and impregnation of high-purity Si are carried out in the same furnace so that they can be handled outside the furnace. Therefore, it is intended to obtain a higher-purity semiconductor processing member than conventional ones by avoiding the contamination, and to further reduce the running time in manufacturing.
【００１３】[0013]
【課題を解決するための手段】この発明は、加熱炉内の
上部に炭化珪素質焼成体を載置し、かつ炭化珪素質焼成
体の下部には高純度Ｓｉを配置し、ハロゲン又はハロゲ
ン化水素ガスの雰囲気中で加熱して炭化珪素質焼成体の
純化処理を行い、純化した炭化形質焼成体を炉内に保持
したままで次に高純度Ｓｉを加熱溶融して炭化珪素質焼
成体に含浸することを特徴とする半導体熱処理用部材の
製造方法（請求項１）及び半導体熱処理用部材が炉芯
管、ライナー管及びウエハボートのいずれか一つである
請求項１記載の半導体熱処理用部材の製造方法（請求項
２）である。以下に、これらの発明をさらに説明する。According to the present invention, a silicon carbide-based fired body is placed in the upper part of a heating furnace, and high-purity Si is placed under the silicon carbide-based fired body to perform halogen or halogenation. The silicon carbide-based fired body is heated in an atmosphere of hydrogen gas to be purified, and the purified carbonized trait fired body is held in the furnace, and then high-purity Si is heated and melted to form a silicon carbide-based fired body. The semiconductor heat treatment member according to claim 1, wherein the semiconductor heat treatment member is impregnated, and the semiconductor heat treatment member is any one of a furnace core tube, a liner tube and a wafer boat. Is a manufacturing method (claim 2). Hereinafter, these inventions will be further described.
【００１４】[0014]
【発明の実施の態様】図１及び図２は、この発明の実施
の態様を示したものである。図１において、１０はこの
発明の半導体熱処理用炉心管の製造に用いる加熱炉であ
る。加熱炉１０の下部には容器１９に収納された多数の
高純度Ｓｉ塊１１が載置され、その上方には炭化珪素質
焼成体の半導体熱処理用炉芯管１２がその厚さ方向に少
なくとも一つの貫通孔を有する板状体１８を介して載置
されている。１３は炭素棒で、この炭素棒１３の上端は
炭化珪素質焼成体の半導体熱処理用炉心管１２と接触
し、またその下端は高純度Ｓｉ塊１１の中に埋装されて
いる。１４はカーボン発熱体でその外周には上下動可能
とした高周波コイル１５が巻装されている。1 and 2 show an embodiment of the present invention. In FIG. 1, 10 is a heating furnace used for manufacturing the semiconductor heat treatment core tube of the present invention. A large number of high-purity Si ingots 11 housed in a container 19 are placed in the lower part of the heating furnace 10, and a furnace core tube 12 for semiconductor heat treatment of a silicon carbide-based fired body is provided above the at least one ingot in the thickness direction. It is placed via a plate-like body 18 having one through hole. Reference numeral 13 is a carbon rod, and the upper end of the carbon rod 13 is in contact with the semiconductor heat treatment furnace core tube 12 of the silicon carbide sintered body, and the lower end thereof is embedded in the high-purity Si ingot 11. Reference numeral 14 denotes a carbon heating element, and a high frequency coil 15 which can move up and down is wound around the carbon heating element.
【００１５】なお、高周波コイル１５は、この構造に限
定されるものではなく、例えば上記上下動の上端及び下
端まで連続して配置する構造とし、上端側もしくは下端
側のみ電気的接続をオフとする構造にしてもよい。The high frequency coil 15 is not limited to this structure. For example, the high frequency coil 15 has a structure in which the upper end and the lower end of the vertical movement are continuously arranged, and the electrical connection is turned off only on the upper end side or the lower end side. It may be structured.
【００１６】上記装置を用いて半導体熱処理用炉芯管を
製造するには、高周波コイル１５をその下端が高純度Ｓ
ｉ塊１１の集合体の上方にくるように配置し、高周波コ
イル１５に通電してカーボン発熱体１４を加熱し、加熱
炉１０中の炭化珪素質焼成体が約１７００℃、高純度Ｓ
ｉ塊１１が１４５０℃未満（好ましくは１０００〜１３
５０℃）になるように加熱し、同時に加熱炉１０の下部
から、キャリアガスとして窒素ガスを用いて、ＨＣｌガ
ス１６を導入し１時間の純化処理を行う。In order to manufacture a furnace core tube for semiconductor heat treatment using the above apparatus, the high frequency coil 15 has a high purity S
It is arranged so as to be located above the aggregate of the i-lumps 11, and the high-frequency coil 15 is energized to heat the carbon heating element 14. The silicon carbide-based fired body in the heating furnace 10 has a high purity of about 1700 ° C.
i mass 11 is less than 1450 ° C (preferably 1000 to 13)
The temperature is raised to 50 ° C.), and at the same time, HCl gas 16 is introduced from the lower part of the heating furnace 10 using nitrogen gas as a carrier gas to perform a purification treatment for 1 hour.
【００１７】これによって、高純度Ｓｉ塊を粉砕形成す
る際にその表面に付着した不純物を除去することがで
き、また同時に炭化珪素質焼成体の純化を行うことがで
きる。なお、純化処理の際には炉内の圧力を０．０１〜
７００トールの間で交互にサイクル変動させることが好
ましい。これにより、炭化珪素質焼成体の内部まで十分
な純化を行うことができる。With this, impurities adhering to the surface of the crushed high-purity Si lump can be removed, and at the same time, the silicon carbide-based fired body can be purified. During the purification treatment, the pressure inside the furnace should be 0.01-
Alternating cycles between 700 Torr are preferred. As a result, it is possible to sufficiently purify the inside of the silicon carbide-based fired body.
【００１８】その後、図２に示すように高周波コイル１
５をその下端が高純度Ｓｉ塊の集合体下方にくるように
配置し、高純度Ｓｉを１４５０℃以上（好ましくは１５
５０〜１６５０℃）の高温で加熱して溶解してＳｉ融液
１７とする。同時に、炭素棒１３を介して毛細管現象で
高純度Ｓｉを炭化珪素質焼成体に含浸した後、冷却する
ことによりこの発明による半導体熱処理用炉芯管を得
る。After that, as shown in FIG. 2, the high frequency coil 1
5 is arranged such that the lower end thereof is below the aggregate of high-purity Si lumps, and the high-purity Si is 1450 ° C. or higher (preferably 15
It is heated at a high temperature of 50 to 1650 ° C. and melted to form a Si melt 17. At the same time, the silicon carbide fired body is impregnated with high purity Si through the carbon rod 13 by capillarity and then cooled to obtain the furnace core tube for semiconductor heat treatment according to the present invention.
【００１９】なお、炭素棒１３は気孔率２０〜４０％程
度のものが好ましく、カーボンフエルト等でも差支えな
い。また、上記炭化珪素質焼成体は、気孔率を２０〜４
０％とすることが好ましい。気孔率が４０％を超えると
含浸後の部材の十分な機械的強度が得られず、また２０
％未満であると焼成体全体を高純度化するための十分な
通気性が得られず、かつ十分なＳｉ含浸がされないから
である。The carbon rod 13 preferably has a porosity of about 20 to 40%, and carbon felt or the like may be used. Further, the silicon carbide-based fired body has a porosity of 20 to 4
It is preferably 0%. If the porosity exceeds 40%, sufficient mechanical strength of the member after impregnation cannot be obtained.
If it is less than%, sufficient air permeability for highly purifying the entire fired body cannot be obtained, and sufficient Si impregnation cannot be performed.
【００２０】以下に、この発明の実施例をあげてさらに
説明する。
（実施例）純度９９．８％、粒度４０〜２００μｍの高
純度炭化珪素粉末とランプブラックを重量比１００：７
で混合し、これにフェノールレジンを外割りで１２重量
％加えて十分に混練し、外径２４０mm、内径２３０mm、
長さ２３００mmの多孔質炭化珪素質管（炉芯管用管）を
成形し、これを８００℃で焼成し気孔率が３０％の焼成
体を得た。The present invention will be further described below with reference to examples. (Example) A high-purity silicon carbide powder having a purity of 99.8% and a particle size of 40 to 200 [mu] m and lamp black are in a weight ratio of 100: 7.
12% by weight of phenol resin was added to the mixture and kneaded thoroughly to give an outer diameter of 240 mm, an inner diameter of 230 mm,
A porous silicon carbide tube (tube for furnace core tube) having a length of 2300 mm was formed and fired at 800 ° C. to obtain a fired body having a porosity of 30%.
【００２１】この多孔質炭化珪素質焼成体を図１に示す
ようにして炉内に載置し下部に高純度Ｓｉ塊を装填し
た。これを図１に示すのと同じように１４５０℃で加熱
し純化処理を行い、次にこの焼成体を炉内に装填したま
まで、図２に示すように高周波コイルを下方に引下げて
からこれに通電し、Ｓｉをさらに高温に加熱して溶融し
炉芯管用管に含浸して炉芯管を得た。同じようにして、
ライナー管、ボートを作成した。This porous silicon carbide fired body was placed in a furnace as shown in FIG. 1 and a high-purity Si mass was loaded in the lower part. This is heated at 1450 ° C. for purification treatment in the same manner as shown in FIG. 1, and then the high frequency coil is pulled down as shown in FIG. And Si was further heated to a higher temperature to be melted and impregnated into the furnace core tube to obtain a furnace core tube. In the same way
I made a liner tube and a boat.
【００２２】（比較例）実施例と同じ多孔質炭化珪素質
焼成体を成形した。この焼成体を実施例と同じ炉内で実
施例と同じようにして純化処理を行ったのち、これを炉
内から一度取り出した。その後、再びこの成形体をＳｉ
含浸用炉内に装填し高純度Ｓｉを含浸して炉芯管を得
た。同じようにしてライナー管、ボートを作成した。(Comparative Example) The same porous silicon carbide fired body as in the example was molded. This fired body was subjected to a purification treatment in the same furnace as that of the example in the same manner as in the example, and then taken out from the furnace once. After that, this molded body is again made into Si
A furnace core tube was obtained by charging the impregnation furnace and impregnating it with high-purity Si. Liner tubes and boats were made in the same manner.
【００２３】実施例及び比較例で作成したライナー管、
炉芯管、ボートを用いて８インチウエハを１２５０℃、
ＨＣｌ＋Ｏ2 でガス中で２０時間の処理を行った。その
後、これを１２５０℃で１時間アニール処理を行い、こ
のウエハの特性を調べたところ表１の通りであった。ま
た、実施例のランニングタイムは、比較例の半分以下で
あり、極めて作業時間の短縮されることがわかった。Liner tubes prepared in Examples and Comparative Examples,
8 inch wafers at 1250 ° C using furnace core tube and boat,
Treatment with HCl + O 2 in gas for 20 hours. Then, this was annealed at 1250 ° C. for 1 hour, and the characteristics of this wafer were examined. The running time of the example was less than half that of the comparative example, and it was found that the working time was extremely shortened.
【００２４】[0024]
【表１】 [Table 1]
【００２５】[0025]
【発明の効果】以上の通り、この発明によれば炉芯管、
ライナー管などの半導体処理用部材が従来にも増して高
純度で製造できるので、これを用いてウエハのアニール
処理などを行うと半導体ウエ４ハの汚染が大幅に低減で
きてウエハの劣化を大きく抑制することが可能となる。
また、この発明によれば製造のランニングタイムが、従
来の製造方法に比較して半分以下とすることができ極め
て作業効率が向上される。As described above, according to the present invention, the furnace core tube,
Since semiconductor processing members such as liner pipes can be manufactured with higher purity than ever before, if the wafer is annealed using this, the contamination of the semiconductor wafer 4 can be greatly reduced and the deterioration of the wafer can be greatly increased. It becomes possible to suppress.
Further, according to the present invention, the running time of the manufacturing can be reduced to half or less as compared with the conventional manufacturing method, and the working efficiency is remarkably improved.
【図１】この発明の１実施例になる半導体拡散炉管の製
造に用いる加熱炉の側面を示す説明図。FIG. 1 is an explanatory view showing a side surface of a heating furnace used for manufacturing a semiconductor diffusion furnace tube according to an embodiment of the present invention.
【図２】この発明の１実施例になる半導体拡散炉管の製
造に用いる加熱炉で高周波コイル１５を下方に下げた場
合の側面を示す説明図。FIG. 2 is an explanatory view showing a side surface when the high frequency coil 15 is lowered downward in the heating furnace used for manufacturing the semiconductor diffusion furnace tube according to the embodiment of the present invention.
【図３】 半導体ウエハの加熱処理の状況を示す従来の
加熱炉の側断面図。FIG. 3 is a side sectional view of a conventional heating furnace showing a state of heat treatment of a semiconductor wafer.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭55−80714（ＪＰ，Ａ) 特開 昭62−12668（ＪＰ，Ａ) 特開 昭63−35452（ＪＰ，Ａ) 特開 平６−211574（ＪＰ，Ａ) 特開 平８−91934（ＪＰ，Ａ) 特公 平１−36981（ＪＰ，Ｂ２) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/205 H01L 21/22 C04B 35/565 C04B 41/88 ─────────────────────────────────────────────────── ─── Continuation of front page (56) Reference JP-A-55-80714 (JP, A) JP-A-62-12668 (JP, A) JP-A-63-35452 (JP, A) JP-A-6- 211574 (JP, A) JP 8-91934 (JP, A) JP-B 1-36981 (JP, B2) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 21/205 H01L 21 / 22 C04B 35/565 C04B 41/88
Claims (2)
置し、かつ炭化珪素質焼成体の下部には高純度Ｓｉを配
置し、ハロゲン又はハロゲン化水素ガスの雰囲気中で加
熱して炭化珪素質焼成体の純化処理を行い、純化した炭
化形質焼成体を炉内に保持したままで次に高純度Ｓｉを
加熱溶融して炭化珪素質焼成体にＳｉを含浸することを
特徴とする半導体熱処理用部材の製造方法。1. A silicon carbide-based fired body is placed in the upper part of a heating furnace, and high-purity Si is placed in the lower part of the silicon carbide-based fired body, and heated in an atmosphere of halogen or hydrogen halide gas. A silicon carbide-based fired body is purified, and then the purified carbonized trait fired body is held in the furnace, and then high-purity Si is heated and melted to impregnate the silicon carbide-based fired body with Si. A method for manufacturing a semiconductor heat treatment member.
管及びウエハボートのいずれか一つである請求項１記載
の半導体熱処理用部材の製造方法。2. The method for manufacturing a semiconductor heat treatment member according to claim 1, wherein the semiconductor heat treatment member is any one of a furnace core tube, a liner tube and a wafer boat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26553895A JP3469688B2 (en) | 1995-10-13 | 1995-10-13 | Method for manufacturing semiconductor heat treatment member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26553895A JP3469688B2 (en) | 1995-10-13 | 1995-10-13 | Method for manufacturing semiconductor heat treatment member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09106953A JPH09106953A (en) | 1997-04-22 |
| JP3469688B2 true JP3469688B2 (en) | 2003-11-25 |
Family
ID=17418522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26553895A Expired - Fee Related JP3469688B2 (en) | 1995-10-13 | 1995-10-13 | Method for manufacturing semiconductor heat treatment member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3469688B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6699401B1 (en) | 2000-02-15 | 2004-03-02 | Toshiba Ceramics Co., Ltd. | Method for manufacturing Si-SiC member for semiconductor heat treatment |
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1995
- 1995-10-13 JP JP26553895A patent/JP3469688B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09106953A (en) | 1997-04-22 |
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