JP3498950B2 - Multi target equipment for sputtering - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus in which high-energy particles are made to collide with a target in a vacuum chamber, and thereby the material molecules constituting the target are ejected, so that a plurality of targets are sequentially placed at sputtering positions. The present invention relates to a multi-target apparatus for sputtering which can be supplied and sputtered.

[0002]

2. Description of the Related Art When a multi-layered thin film is formed on a substrate such as a semiconductor wafer by a sputtering method, targets made of different materials are sequentially placed on a sputtering electrode in a vacuum chamber and sputtered onto the substrate. It is necessary to deposit multiple materials. Even when depositing a single material layer, when there are multiple substrates and a large amount of target is required, it is necessary to replace the target consumed by sputtering with another target and perform sputtering. is there.

Conventionally, when depositing a plurality of targets by sputtering as described above, a manipulator provided at the tip of the transfer rod is inserted from a load lock cell provided at the side of a vacuum chamber maintained at a high vacuum. , Take out the sputtered target on the sputter electrode, set a new target on the sputter electrode,
The means of sputtering this was taken next.

[0004]

However, in the means for introducing and exchanging the target from the outside of the vacuum chamber maintained in the high vacuum state as described above, the load lock cell is opened and closed each time. Need to be evacuated to high vacuum or returned to atmospheric pressure.
Troublesome operation and time are required. Further, since it takes time to replace the target, the time intervals between the sputtering steps are too wide, which is not preferable in terms of film formation characteristics.

The present invention has been made in view of the problems in the conventional multi-target sputtering means,
It is a first object of the present invention to provide a sputtering multi-target apparatus capable of efficiently exchanging a plurality of targets in a vacuum chamber in a short time and sequentially performing sputtering. Furthermore, its second purpose is to make the alignment between the sputtering electrode and the target accurate,
The goal is to place the target in the correct position for sputtering.

[0006]

To achieve the above object, in the present invention, a rotating turntable 1 is provided below a position where a target 9 is sputtered in a vacuum chamber 12, and a rotation center of the turntable 1 is provided. A plurality of targets 9 are arranged on the circumference of a certain distance from the position, and by rotating the turntable 1 and stopping the positioning, the plurality of targets 9 are sequentially transported to directly below the sputtering position, and the target is sputtered by the lift 11 thereat. It was pushed up to sputtering. Then, after sputtering the target 9, the lift 9 lowers the target 9 back onto the turntable 1, and the rotation of the turntable 1 conveys the next target 9 directly below the sputtering position. It is pushed up and sputtered.
This makes it possible to sequentially replace the plurality of targets 9 inside the vacuum chamber without sequentially introducing the plurality of targets 9 from the outside of the vacuum chamber.

The multi-target apparatus for sputtering according to the present invention is rotatably supported horizontally in a vacuum chamber 12, and a lift passage hole 14 having a diameter slightly smaller than that of the target 9 is formed on a circumference of a certain distance from the center of rotation. Of the turntable 1 and a lift passage hole 14 of the turntable 1 which is arranged on the turntable 1.
When the target support plate 2 having the target holding part 10 for holding the target 9 at the sputter position just above the stop position and the lift passage hole 14 of the turntable 1 stop just below the target holding part 10, It has a lift 11 that rises from the bottom of the lift passage hole 14 and lifts the target 9 placed therein to the target holding portion 10 of the target support plate 2.

In this multi-target device, the target 9 is placed on the lift passage hole 14 of the turntable 1, the turntable 1 is rotated, and the target 9 is positioned directly below the sputter position and stopped. .
In this state, when the lift 11 rises, the target 9 is placed on the lift 11 and rises, and the target 9 is placed on the target holding portion 10 of the target support plate 2. In this state, the target 9 is sputtered by colliding the ions generated in the vacuum chamber 12 with the target 9. As a result, molecules are released from the target 9, and the molecules adhere to the substrate to form a film.

When the sputtering of one target 9 is completed, the lift 11 descends to return the sputtered target 9 to the original position on the turntable 1.
After that, the turntable 1 is rotated, the next target 9 is positioned so as to be directly below the sputter position, and then stopped. In the same manner, the next target 9 is raised to the sputtering position and sputtered. In this way, sputtering is performed by sequentially changing the plurality of targets 9 in the vacuum chamber 12.

Here, the upper end portion of the lift 11 on which the target 9 is placed serves as the sputtering electrode 4 which maintains the target 9 at a negative potential. As a result, it is possible to apply a negative potential to the target 9 while being placed on the upper surface of the lift 11, apply energy to the ions by the voltage, and cause the ions to collide, thereby performing sputtering.

Further, the target support plate 2 is a portion other than the target holding portion 10 of the turntable 1 below the target holding portion 10.
To the ion generating side. As a result, only the target 9 can be sputtered without the ions colliding with the targets 9 other than the sputtering target 9 and being sputtered.

Further, when the lift passage hole 14 of the turntable 1 stops just below the target holding portion 10, there is provided a positioning mechanism for positioning the turntable 1 at that position. The positioning mechanism includes a plunger receiver 7 provided at a position corresponding to the position of the lift passage hole 14 on the peripheral surface of the turntable 1, and an actuator 5 for positioning the turntable 1 by inserting the tips of the plunger 6 in front of and behind the plunger receiver 7. Consists of.

By providing such a positioning mechanism,
Since the turntable 1 is always stopped at a predetermined position and the target 9 can be lifted and lowered by the lift 11, the positions of the lift 1 and the lift passage hole 14 of the turntable 1, and the target 9 and the target holding portion 10 of the target support plate 2. The alignment can be done accurately. As a result, the lift 11
When moving up and down the target 9, the target 9 is not damaged.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION Next, embodiments of the present invention will be described specifically and in detail with reference to the drawings.
1 to 4 are diagrams showing an outline of a sputtering multi-target apparatus according to an embodiment of the present invention.
The vacuum chamber 12 is not shown in FIG.

As shown in these figures, the vacuum chamber 1
2, a disk-shaped target support plate 2 is horizontally installed, and the target support plate 2 is provided with a target holding portion 10 having a circular hole. The target holding unit 10 is provided at a position facing a substrate holder on which a substrate (not shown) for forming a thin film by sputtering is placed. In the illustrated example, the target holding portions 10 are provided at two locations on the target support plate 2, but one target holding portion 10 is unused, so the hole is closed by the lid 19.

A disc-shaped turntable 1 is arranged directly below the target support plate 2 in parallel with the target support plate 2. Circular lift passage holes 14 are formed at equal intervals on one circumference at a constant distance from the center of the turntable 1. In the illustrated example, the lift passage hole 1
4 are opened at 90 ° intervals, but if the number of targets 9 used is large, more lift passage holes 1
4 may be provided.

The center of the turntable 1 and the lift passage hole 1
A plunger receiver 7 is provided on the outer peripheral edge of the turntable 1 on an extension of an imaginary straight line connecting the center of the turntable 4. The plunger receiver 7 is provided with a plunger insertion hole 8 in the radial direction of the turntable 1, and the plunger insertion hole 8 is provided with a taper so that the diameter on the inner side is smaller than the diameter on the front side.

The center of this turntable 1 is the vertical axis 1.
4, a rotation driving source (not shown) provided outside the vacuum chamber 12 introduces rotation to the shaft 14 via the rotation introducing device 3 and the flange 13, and the turntable 1 rotates intermittently. In the illustrated example, the turntable 1 has 9
The position where the turntable 1 stops intermittently at 0 ° intervals is where the lift passage holes 14 are located directly below the target holding portion 10 of the target support plate 2.

Target holding portion 1 of the target support plate 2
A lift 11 is provided just below the position where the lift passage hole 14 of the turntable 1 stops just below 0. The lift 11 has a columnar shape having an outer diameter smaller than that of the lift passage hole 14, and the sputter electrode 4 which is maintained at a negative potential is provided on the upper surface thereof. This lift 11
The elevating mechanism 15 attached to the port 17 provided in the lower portion of the vacuum chamber 12 via a flange moves up and down in the vertical direction.

Further, on the side of the vacuum chamber 12, an air cylinder is provided as an actuator 5 constituting a positioning mechanism for the turntable 1. The actuator 5 is attached to a port 18 provided on the side of the vacuum chamber 12 via a flange. The actuator 5 is arranged on an extension line of a virtual straight line connecting the center of the turntable 1 and the center of the lift passage hole 14 of the turntable 1 which stops just below the target holding portion 10 of the target support plate 2, and Plunger 6
Makes a stroke in the direction of the extension of the virtual straight line.

FIG. 4 shows the plunger 6 of the actuator 5.
FIG. 7 is an enlarged view showing a state in which a tip end of is fitted into a plunger insertion hole 8 of a plunger receiver 7. As shown in this figure, the tip of the plunger 6 is provided with a taper having the same slope as that formed in the plunger insertion hole 8 of the plunger receiver 7.

Next, the operation of the sputtering multi-target device will be described below. First, in the vacuum chamber 12, the targets 9 are arranged on the lift passage holes 14 of the turntable 1 with the peripheral portions of the targets 9 placed. In this state, the inside of the vacuum chamber 12 is depressurized to a required degree of vacuum.

When the first target 9 is sputtered after the pressure in the vacuum chamber 12 is reduced, first, the turntable 1 is rotated so that the first target 9 is directly below the target holding portion 10 of the target support plate 2. Move to and stop there. When the turntable 1 rotates, the plunger 6 of the actuator 5 is retracted, but when the turntable 1 is stopped at the above-mentioned position, the actuator 5 is activated, the plunger 6 is extended, and the tip thereof is tapered. Along with this, it is fitted into the plunger insertion hole 8 of the plunger receiver 7. As a result, the turntable 1
The first target 9 is accurately positioned so as to be located directly below the target holding portion 10 of the target support plate 2,
Retained.

When the turntable 1 rotates, the lift 11 is at the lowest position, and the sputter electrode 4 on its upper surface is below the turntable 1. As aforementioned,
When the first target 9 on the turntable 1 is accurately positioned so as to be located directly below the target holding portion 10 of the target support plate 2 and stopped, the lift 11 is lifted and is placed on the sputter electrode 4 thereon. The target 9 is placed, and then the target 9 is placed in the target holding portion 10 of the target support plate 2 by going up through the lift holding hole 14. This state is shown in FIG.

In this state, the vacuum chamber 12 is made to have a dilute gas atmosphere such as argon, and glow discharge or the like is generated in the vacuum chamber 12 to ionize the argon,
Generates ions. At this time, the sputter electrode 4 on which the target 9 is placed is maintained at a negative voltage, and the generated ions are given energy by the negative voltage of the sputter electrode 4, collide with the target 9, and sputter the target 9. . As a result, the molecules of the material forming the target 9 are released from the target 9, and the molecules of the material are deposited on the substrate to form a film.

When the sputtering of the first target 9 is completed in this way, the lift 11 descends to return the sputtered target 9 to the original position on the turntable 1. Then, the turntable 1 is rotated to move the next second target 9 directly below the sputtering position. Therefore, the turntable 1 is positioned and held in the same manner as the first target 9. Similarly, the lift 11 raises the second target 9 to the sputtering position, and after the sputtering, the turntable 11 is returned to the original position. Hereinafter, the third and fourth targets 9 are similarly moved to perform sputtering.

As described above, in the above-mentioned sputtering multi-target apparatus, the actuator 5 is used as the positioning mechanism, whereby the turntable 1 and the target holding portion 1 of each target 9 of the target support plate 2 are provided.
Since the target 9 is accurately positioned and held right below 0, the target 9 can be positioned and sputtered. In particular, the lift 11 and the target 9
Since there is no positional deviation between the target and the target, the target 9 is not damaged and can be operated safely.

Although the air cylinder is used as the actuator 5 of the positioning mechanism in the above-described example, similar positioning can be performed by using an actuator of another type such as a solenoid or an electromagnetic clutch. Further, since the turntable 1 is basically positioned in the circumferential direction, that is, the rotation angle thereof is positioned, the shape of the insertion portion on the side receiving the plunger 6 is the tapered plunger insertion hole 8. Instead, it may be fitted in the vertical V-shaped groove.

[0029]

As described above, in the sputtering multi-target device according to the present invention, the vacuum chamber 1
Since the plurality of targets 9 can be sequentially changed and sputtered within the unit 2, the plurality of targets 9 can be sequentially and efficiently sputtered. Thereby, the sputtering can be efficiently performed without taking time.

Further, since a plurality of targets 9 can be sequentially sputtered without forming a time to form a film on the substrate, a high quality film can be formed without stains or changes on the surface of the substrate. Further, by positioning the turntable 1 by the positioning mechanism, the turntable 1 on which the target 9 is placed can be stopped at an accurate position and the target 9 can be lifted and lowered by the lift 11, so that the target 9 can be safely operated without being damaged. Is possible.

[Brief description of drawings]

FIG. 1 is a perspective view showing only the main components except a vacuum chamber and the like showing a sputtering multi-target apparatus according to an embodiment of the present invention.

FIG. 2 is a plan view showing a multi-target device for sputtering according to the same embodiment.

3 is a cross-sectional view taken along the line AA of FIG.

FIG. 4 is an enlarged sectional view of an essential part showing a part of a positioning mechanism of the turntable of FIG.

[Explanation of symbols]

1 turntable 2 Target support plate 4 Sputtering electrode 5 actuators 7 Plunger receiving 9 targets 10 Target holding part of target support plate 11 lift 12 vacuum chamber 14 Turntable lift passage hole

─────────────────────────────────────────────────── ─── Continuation of front page (56) Reference JP 2000-273631 (JP, A) JP 10-147863 (JP, A) JP 9-3640 (JP, A) JP 7-318577 (JP, A) JP-A-7-286268 (JP, A) JP-A-5-70952 (JP, A) JP-A-5-39567 (JP, A) Actual development Sho-61-189453 (JP, U) (JP, A) 58) Fields investigated (Int. Cl. ⁷ , DB name) C23C 14/34 H01L 21/203

Claims (5)

(57) [Claims] 1. A sputtering multi-target device for sequentially supplying a plurality of sputtering targets (9) to a sputtering position in a vacuum chamber (12), which is rotatably supported horizontally in the vacuum chamber (12), A lift passage hole (14) having a diameter slightly smaller than the target (9) on the circumference of a certain distance from the center of rotation.
With a perforated turntable (1) and the turntable (1) placed on the turntable (1)
Target supporting plate (2) having a target holding part (10) for holding the target (9) at a sputter position immediately above the position where the lift passage hole (14) of the turntable (1) stops, and the lift passage of the turntable (1). When the hole (14) stops just below the target holding part (10), it rises from below the lift passage hole (14) and lifts the target (9) arranged there to lift the target of the target support plate (2). A multi-target apparatus for sputtering, comprising: a lift (11) for raising the holder (10). 2. The upper part of the lift (11) on which the target (9) is placed is a sputtering electrode (4) for maintaining the target (9) at a negative potential. Multi-target device for sputtering. 3. The target supporting plate (2) covers the turntable (1) below the target supporting part (10) with respect to the ion generating side at a part other than the target holding part (10). Alternatively, the multi-target device for sputtering according to the item 2. 4. A positioning mechanism for positioning the turntable (1) at that position when the lift passage hole (14) of the turntable (1) stops immediately below the target holding portion (10). Claim 1 characterized by
A multi-target device for sputtering according to any one of 3 to 3. 5. The turntable 1 comprises the positioning mechanism.
Positioning the turntable (1) by inserting the plunger receiver (7) provided corresponding to the position of the lift passage hole (14) on the peripheral surface of the and the front end of the plunger (6) forward and backward to the plunger receiver (7). The sputtering multi-target device according to claim 4, further comprising: