JP6184468B2 - Sputtering equipment - Google Patents

Description

  The present invention relates to a sputtering apparatus for forming a thin film on a substrate.

  In the process of manufacturing a semiconductor, a thin film may be formed on a substrate such as a wafer. As a method for forming a thin film, there is a sputtering method in which high energy particles collide with a material (target) as a material in a vacuum chamber, and the struck material is deposited on a substrate to form a film. Some sputtering apparatuses used in the sputtering method include a plurality of sputtering sources and targets.

  As described in Patent Documents 1 to 4, it is not necessary to increase the diameter of the vacuum chamber even if the number of required targets is increased, and the invention of a sputtering apparatus for reducing the size of the vacuum chamber as a whole is also disclosed. Has been.

Japanese Patent No. 3498950 Japanese Patent No. 40867792 Japanese Patent No. 4889712 Japanese Patent No. 5075666

  However, in the inventions of Patent Documents 1 to 4, since the substrate and the target are opposed to each other, the target size must be increased with respect to the substrate in order to improve the film formation distribution. If it is large, there is a disadvantage that the cost becomes large. In addition, there is a method of shifting the center of the substrate and the center of the target in order to improve the film formation distribution, but there is a disadvantage that the film formation speed becomes slow.

  Furthermore, if the sputtering source is inclined with respect to the substrate, a large number of sputtering sources can be arranged, and even with a small target, the film formation distribution can be improved, but the cost increases as the number of sputtering sources increases. There is also the problem of becoming.

  In view of the above, an object of the present invention is to provide a sputtering apparatus in which the deposition distribution on the substrate is improved and the number of sputtering sources is reduced.

More in order to solve the above problems, a sputtering apparatus is the present invention is a sputtering apparatus for depositing a thin film on a substrate by sputtering a target which is in contact with the sputter source within a vacuum chamber, the target is the horizontal Rail-like arrangement arranged side by side and holding the target so that the target is inclined with respect to the substrate, and slidingly moving in the longitudinal direction in which the targets are juxtaposed and perpendicular to the sputtering source A target table having a slider and a moving mechanism for bringing the sputtering source into contact with the target, the target table slidingly moving with the slider, whereby the sputtering source among the plurality of targets arranged. Select one target on the extension line of Mechanism, said toward the target selected by the target table moves the sputtering source in the axial direction, characterized in that.

  The target table has a slider for sliding movement in a direction perpendicular to the sputtering source, and the moving mechanism moves the sputtering source in the axial direction so as to select the target on an extension line of the sputtering source. It is characterized by that.

  The target is held at an angle of 40 to 50 degrees with respect to the substrate.

  The target table has a through-hole through which the sputter source passes, the target is held such that the height from the target table can be varied, and the moving mechanism applies the sputter source to the target. The sputter source is penetrated through the target table so that the contact is maintained, and the sputter source is pushed into the target.

  According to the present invention, a plurality of targets are selectably attached to a sputtering source disposed obliquely with respect to the substrate, so that even a small target can be formed on a large-area substrate with good distribution. Further, since it is not necessary to increase the number of sputter sources, the cost can be suppressed and it is extremely economical.

It is a front view of the sputtering device which is the present invention. It is a top view of the sputtering device which is the present invention. It is a side view of the sputtering device which is the present invention. It is the front view which permeate | transmitted a part of sputtering device which is this invention. It is the cross-sectional view which cut | disconnected the storage port of the sputtering device which is this invention in the horizontal direction (transverse section). It is the longitudinal cross-sectional view which cut | disconnected the storage port of the sputtering device which is this invention in the orthogonal | vertical direction (crown surface). It is the longitudinal cross-sectional view which cut | disconnected the storage port of the sputtering device which is this invention in the orthogonal | vertical direction (sagittal plane). It is a figure explaining the target table of the sputtering device which is this invention. It is a figure explaining sputtering by the sputtering device which is this invention.

  Embodiments of the present invention will be described below in detail with reference to the drawings. In addition, what has the same function attaches | subjects the same code | symbol, and the repeated description may be abbreviate | omitted.

  First, an overview of the entire sputtering apparatus according to the present invention will be described. 1 is a front view of the sputtering apparatus, FIG. 2 is a plan view of the sputtering apparatus, and FIG. 3 is a side view of the sputtering apparatus. FIG. 4 is a front view through which a part of the sputtering apparatus is transmitted. In order to show a state in which the expansion port 500 is connected, the left half of the storage port 310 is transmitted.

  As shown in FIGS. 1 to 4, the sputtering apparatus 100 is an apparatus that deposits a thin film on a substrate by sputtering a target placed in a sputtering source 400 or a sputtering source 410 in a vacuum chamber 200. Note that the sputtering apparatus 100 is a multi-target type that can be arbitrarily selected from a plurality of targets, and can be simultaneously sputtered by a plurality of sputtering sources. The substrate may be installed in the vacuum chamber 200 when the operator operates the manipulator 210, for example, with the surface on which the thin film is applied facing downward.

  The vacuum chamber 200 is a container for making a vacuum inside, and a vacuum state is created using a vacuum pump. The vacuum chamber 200 includes at least a sputtering source 400, a storage port 300, and the like, and may include an expansion port 500 and the like. Two or more sets such as the sputtering source 410 and the storage port 310 may be provided. In this embodiment, two sets are assumed.

  The sputter sources 400 and 410 are electrodes for applying a high voltage to the vacuum chamber 200 by using magnetron discharge. The electrodes of the sputtering sources 400 and 410 are separated from the target, and RF (high frequency), DC (direct current) or the like is applied after the electrode is brought into contact with the target. For example, the sputtering sources 400 and 410 are installed below the substrate so that the target is inclined with respect to the substrate. Note that sputtering may be performed by simultaneously sputtering different types of targets at the sputtering source 400 and the sputtering source 410 to change the mixing ratio, or sputtering may be performed by using only one of them.

  The storage ports 300 and 310 are spaces for storing a plurality of targets and a target table in which they are arranged side by side. The storage port 300 may be disposed so as to be orthogonal to the sputtering source 400, and the storage port 310 may be disposed so as to be orthogonal to the sputtering source 410. Note that when the storage port 300 and the storage port 310 are arranged in parallel, the sputtering source 400 and the sputtering source 410 may extend to opposite sides.

  The expansion port 500 is a space for connecting a plasma source or the like for introducing a reactive gas such as O (oxygen) or N (nitrogen) into the vacuum chamber 200. The expansion port 500 may be provided at an arbitrary position such as between the sputtering source 400 and the sputtering source 410, for example.

  Next, the internal structure of the sputtering apparatus will be described. FIG. 5 is a cross-sectional view of the storage port of the sputtering apparatus cut along AA shown in FIG. 1, and FIG. 6 is a vertical cross-section of the storage port of the sputtering apparatus cut along BB shown in FIG. FIG. 7 is a vertical cross-sectional view of the storage port of the sputtering apparatus cut along CC in FIG.

  As shown in FIGS. 5 to 7, the storage ports 300 and 310 of the vacuum chamber 200 are hollow inside such as a cylinder, and a plurality of targets 360 and 370 (for example, three each) are juxtaposed inside. Target tables 340 and 350 are arranged.

  The targets 360 and 370 are a metal or a compound that is a material of a thin film formed on the substrate. A multilayer film is formed by sputtering different types of targets 360 and 370 in a consistent vacuum. Therefore, the targets 360 and 370 and the sputter sources 400 and 410 are separated so that the plurality of targets 360 and 370 can be replaced with the sputter sources 400 and 410. A combination pattern of the sputtering sources 400 and 410 and the targets 360 and 370 can be freely selected.

  The target tables 340 and 350 are rectangular plate members or frame members, have a width slightly larger than the targets 360 and 370, can be arbitrarily arranged in length, and a plurality of targets 360 and 370 can be arranged side by side. The target tables 340 and 350 hold the targets 360 and 370 so that the targets 360 and 370 are inclined (40 to 50 degrees) with respect to the substrate held by the substrate holder 600. Further, the target tables 340 and 350 are arranged so as to be slidable in a direction orthogonal to the sputtering sources 400 and 410 along the sliders 301 and 311 provided in the storage ports 300 and 310.

  The sliders 301 and 311 move the target tables 340 and 350 in the longitudinal direction inside the storage ports 300 and 310 by, for example, laying two parallel rail-shaped members in the storage ports 300 and 310. . The target tables 340 and 350 are slid by the sliders 301 and 311, and one target 360 and 370 to be brought into contact with the sputtering sources 400 and 410 is selected from the plurality of targets 360 and 370.

  A protective plate 320 is disposed above the target tables 340 and 350 to cover the targets 360 and 370 disposed on the surfaces of the target tables 340 and 350 (the protective plate 320 of the target table 350 is not shown in FIG. 5). ). One opening 321 is formed in the protection plate 320 according to the shape of the targets 360 and 370.

  The opening 321 of the protective plate 320 and any one selected from the targets 360 and 370 and the sputter sources 400 and 410 are aligned in the longitudinal direction (axial direction) of the columnar sputter sources 400 and 410. . The sputtering sources 400 and 410 are arranged so that the targets 360 and 370 are inclined at a predetermined angle (40 to 50 degrees) in one direction from the position (0 degrees) facing the substrate. Note that the sputtering source 410 may be disposed in the direction opposite to the sputtering source 400.

  The sputtering sources 400 and 410 are provided with a moving mechanism for reciprocally moving the electrodes 401 and 411 in the axial direction. By moving the electrodes 401 and 411 in the axial direction, the selected targets 360 and 370 are moved. Abut or move away from targets 360,370.

  The expansion port 500 is provided with a plasma source 501 and the like. The plasma source 501 is for introducing a reactive gas such as O (oxygen) or N (nitrogen), and is used in accordance with purposes such as during sputtering or before and after sputtering.

  When sputtering, the substrate is supported by the substrate holder 600 in the vacuum chamber 200, and the vacuum chamber 200 is evacuated. Then, an inert gas such as Ar (argon) for discharging is introduced into the vacuum chamber 200. When applied to the sputtering sources 400 and 410, ionized inert gas or the like collides with the targets 360 and 370, and the material is blown off from the surfaces of the targets 360 and 370 to be deposited on the surface of the substrate. The

  Next, the operation of the sputtering apparatus will be described. FIG. 8 is a diagram for explaining a target table of the sputtering apparatus, and FIG. 9 is a diagram for explaining sputtering by the sputtering apparatus.

  As shown in FIGS. 8 and 9, in the vacuum chamber 200, a disk-shaped substrate 610 with the surface facing downward is supported by a substrate holder 600, and below that, two sputter sources 400 and 410 are respectively attached to the substrate 610. It is assumed that a thin film is formed on the substrate 610 using a sputtering apparatus while being inclined with respect to the substrate. Note that one material may be sputtered from the sputter source 400 and another material may be sputtered from the sputter source 410, or a single material may be sputtered by the sputter source 400 and the sputter source 410. .

  Prior to sputtering, the targets 360, 361, 362 (360, etc.) are previously set on the target table 340, and the targets 370, 371, 372 (370, etc.) are set on the target table 350. Note that two or more targets 360, 370, etc. may be provided depending on the sputtering conditions. In this embodiment, it is assumed that there are three sheets. In addition, the target 360 grade | etc., 370 grade | etc., Which were shown as an example is a frame in which a disk-shaped center part is a thin film material, and a peripheral part hold | maintains. Since the targets 360 and 370 are not opposed to the rotating substrate 610 but are inclined, it is not necessary to make the film larger than the diameter of the substrate 610 in order to improve the film formation distribution.

  The targets 360, 370, etc. are held on the target tables 340, 350 by passing the target holders 341, 342 through the periphery. For the target holders 341 and 342, for example, pin-shaped fasteners are used, and it is only necessary to hold about four places on the peripheral portion. At this time, the height from the target tables 340 and 350 such as the target 360 and the like 370 is kept variable within the range of the length of the shaft portion of the pin.

  The target table 340 is slid by a slider 301 laid in a direction orthogonal to the sputtering source 400, and any one of the targets 360, 361, 362 is selected and brought on an extension line of the sputtering source 400. Here, it is assumed that the target 360 is selected. The target table 341 is slid by a slider 311 laid in a direction orthogonal to the sputtering source 410, and any one of the targets 370, 371, 372 is selected and brought on an extension line of the sputtering source 410. . Here, it is assumed that the target 372 is selected.

  The slide movement of the target tables 340, 350 is always performed at a juxtaposition interval of the targets 360, 370, etc. so that any of the targets 360, 370, etc. is on the extension line of the sputtering sources 400, 410 without being displaced. You may control to move.

  As shown in FIG. 9, the sputtering source 410 is moved toward the selected target 372 by the moving mechanism 420, and the sputtering source 410 and the target 372 are brought into contact with each other. In order to bring the sputtering source 400 and the target 360 into contact with each other, the sputtering source 400 may be moved toward the selected target 360 by the moving mechanism 420.

  Since the sputter sources 400 and 410 exist on the back side of the target tables 340 and 350, the sputter sources 400 and 410 are sputtered on the target tables 340 and 350 in order to abut on the targets 360 and 370 disposed on the front side of the target tables 340 and 350. Through holes 342 and 352 for allowing the sources 400 and 410 to pass therethrough are opened. The through holes 342 and 352 need only be vacant in the shape and size (for example, diameter in the case of a cylindrical shape) of the portion through which the sputtering sources 400 and 410 penetrate at least at positions where the targets 360 and the like 370 exist.

  The sputter sources 400 and 410 penetrating the target tables 340 and 350 are brought into contact with the targets 360 and the like 370, but further, the sputter sources 400 and 410 are pushed so that the targets 360 and the like 370 and the like are lifted. 360, 370, etc. and the sputter sources 400, 410 are maintained so as not to be separated.

  The substrate 610 supported by the substrate holder 600 is rotated and applied to the electrode 411 of the sputtering source 410, whereby sputtering is performed on the surface of the substrate 610. Further, the sputtering source 400 may be brought into contact with the target 360 and applied to the electrode 401 of the sputtering source 400 for simultaneous sputtering.

  As described above, since a plurality of targets 360, etc., 370, etc. are selectively attached to the sputtering sources 400, 410 arranged obliquely with respect to the substrate 610, even a small target 360, etc., 370, etc. can be applied to a large area substrate 610. Films can be distributed with good distribution. Further, since it is not necessary to increase the number of the sputtering sources 400 and 410, the cost can be suppressed. Furthermore, since the target tables 350 and 360 are installed in the storage ports 300 and 310, the capacity of the vacuum chamber 200 does not increase, and it is not necessary to strengthen the vacuum pump or the like. That is, it is extremely efficient and economical.

  As mentioned above, although the Example of this invention was described, it is not limited to these. For example, the target tables 340 and 350 are not limited to rectangular plate materials, and the targets 360 and 370 may be arranged on the ring in a ring shape in which both ends are connected. Alternatively, the end of the target table 340 and the end of the target table 350 may be connected to each other.

  In the embodiment, the target tables 340, 350 are slid and the sputter sources 400, 410 are reciprocated to bring the targets 360, 370, etc. into contact with the sputter sources 400, 410. 410 may be translated along the target tables 340 and 350, or the target tables 340 and 350 may be reciprocated toward the sputtering sources 400 and 410.

  When the targets 360, 370, etc. are consumed, the sputtering may be continued by changing the selection to another target. At this time, the operator may be notified to select the unused target after notifying the wear of the target 360, or may be controlled to automatically select the unused target. good. Since the target can be exchanged in the vacuum chamber 200 without exposing the vacuum chamber 200 to the atmosphere, it is possible to work efficiently.

100: Sputtering apparatus 200: Vacuum chamber 210: Manipulator 300, 310: Storage port 301, 311: Slider 320: Protection plate 321: Opening part 340, 350: Target table 341, 351: Target holder 342, 352: Through hole 360, 361, 362, 370, 371, 372: target 400, 410: sputtering source 401, 411: electrode 420: moving mechanism 500: expansion port 501: plasma source 600: substrate holder 610: substrate

Claims (3)

In a sputtering apparatus for depositing a thin film on a substrate by sputtering a target abutted against a sputtering source in a vacuum chamber,
A plurality of the targets are arranged side by side , hold the target so that the targets are inclined with respect to the substrate, and slide in a longitudinal direction in which the targets are juxtaposed and perpendicular to the sputtering source. A target table having a rail-shaped slider for moving;
A moving mechanism for bringing the sputtering source into contact with the target,
The target table is slid with the slider to select one target on the extension line of the sputter source among the plurality of targets arranged,
The moving mechanism moves the sputtering source in the axial direction toward the target selected by the target table.
A sputtering apparatus characterized by that. The target is held at an angle of 40 to 50 degrees with respect to the substrate;
The sputtering apparatus according to claim 1. The target table has a through hole for passing the sputtering source;
The target is held such that the height from the target table is variable,
The moving mechanism allows the sputtering source to penetrate the target table so that the contact of the sputtering source with the target is maintained, and further pushes the sputtering source into the target.
The sputtering apparatus according to claim 1 or 2.

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