JP3526802B2 - Adhesive for fixing semiconductor wafer and processing method - Google Patents
Adhesive for fixing semiconductor wafer and processing methodInfo
- Publication number
- JP3526802B2 JP3526802B2 JP2000013070A JP2000013070A JP3526802B2 JP 3526802 B2 JP3526802 B2 JP 3526802B2 JP 2000013070 A JP2000013070 A JP 2000013070A JP 2000013070 A JP2000013070 A JP 2000013070A JP 3526802 B2 JP3526802 B2 JP 3526802B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- sensitive adhesive
- adhesive
- gas
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Adhesives Or Adhesive Processes (AREA)
- Dicing (AREA)
- Adhesive Tapes (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、各種半導体を製造
する工程において、ウエハープロセス終了後のウエハー
を切断分割（ダイシング）する際に半導体ウエハーを固
定するための粘着剤およびその粘着剤を用いた半導体ウ
エハーの加工方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention uses a pressure-sensitive adhesive and a pressure-sensitive adhesive for fixing a semiconductor wafer when the wafer is cut and divided (dicing) after the completion of the wafer process in the process of manufacturing various semiconductors. The present invention relates to a method for processing a semiconductor wafer.
【０００２】[0002]
【従来の技術】従来、半導体ウエハーを素子小片に切断
分割するダイシング加工を行うには、半導体ウエハーを
あらかじめ粘着テープ（ダイシングテープ）に貼り付け
て固定し、そのウエハーを回転丸刃により素子形状に沿
って切断し、その後一つ一つの素子を粘着テープ上より
ピックアップしてダイにマウントする、いわゆるダイレ
クトピックアップ方式がとられている。上記方式をとる
場合、ウエハーを固定するに際しては固定力（粘着力）
が強いことが要求され、逆にピックアップするに際して
は粘着力が弱いこと（易剥離性）が要求される。従来そ
のような要求に応えるために、紫外線（UV）、電離性放
射線、電子線等の照射により粘着剤層を硬化させること
で粘着力を低下させる紫外線硬化型の粘着テープ（特開
平１−２７２１３）や、粘着成分に水溶性ポリマーを用
いてダイシング後に温水で溶出するタイプの粘着テープ
が提案されている。2. Description of the Related Art Conventionally, in order to perform a dicing process for cutting and dividing a semiconductor wafer into element pieces, the semiconductor wafer is previously attached to an adhesive tape (dicing tape) and fixed, and the wafer is formed into an element shape with a rotary round blade. A so-called direct pickup method is adopted in which the elements are cut along the tape, and then each element is picked up from an adhesive tape and mounted on a die. When using the above method, the fixing force (adhesive force) when fixing the wafer
Is required to be strong, and conversely, when picking up, weak adhesion (easy peeling property) is required. Conventionally, in order to meet such demands, an ultraviolet-curable pressure-sensitive adhesive tape in which the pressure-sensitive adhesive layer is cured by curing the pressure-sensitive adhesive layer by irradiation with ultraviolet rays (UV), ionizing radiation, electron beams, etc. (JP-A-1-272213). ) Or a water-soluble polymer as an adhesive component and a type of adhesive tape which is eluted with warm water after dicing is proposed.
【０００３】[0003]
【発明が解決しようとする課題】現在、半導体ウエハー
の大口径・薄型化が世界的規模で進んでおり、最新の多
くのウエハーは外力によって破損しやすくなっている。
そのため、ダイシング時やピックアップ時にウエハーに
加わる負荷をいかに抑えるかがダイシングテープの新た
な課題となっている。例えば、ピックアップ時に完全に
粘着力がゼロになる粘着剤の開発が究極の目標となって
いる（「接着」第４３巻第１号，p.22-25，高分子刊行
会，1999）。At present, semiconductor wafers having large diameters and thinning are being advanced on a global scale, and many of the latest wafers are easily damaged by external force.
Therefore, how to reduce the load applied to the wafer during dicing and pickup has become a new issue for the dicing tape. For example, the ultimate goal is to develop an adhesive that completely eliminates the adhesive force when picking it up ("Adhesion" Vol. 43, No. 1, p.22-25, Kobunshi Publishing Co., 1999).
【０００４】本発明は、上記課題を大きく解決するもの
である。すなわち本発明の目的は、ダイシング後のピッ
クアップ時の剥離性を大きく向上させた半導体固定用の
粘着剤を提供することにある。本発明の他の目的は、そ
の粘着剤を用いた半導体ウエハーの加工方法を提供する
ことにある。The present invention largely solves the above problems. That is, an object of the present invention is to provide a pressure-sensitive adhesive for fixing a semiconductor, which greatly improves the releasability at the time of pickup after dicing. Another object of the present invention is to provide a method for processing a semiconductor wafer using the adhesive.
【０００５】[0005]
【課題を解決するための手段】本発明の粘着剤は、半導
体ウエハーの加工時にそのウェハーを固定するための粘
着剤であって、ガス発生剤を含むことを特徴とする。ま
た、本発明の半導体ウエハーの加工方法は、ガス発生剤
を含む粘着剤によってウエハーを固定することと、ウエ
ハーをダイシングすることと、可視光線、紫外線、エッ
クス線等の電磁波または電子線によってガス発生剤から
ガスを発生させてウエハーを剥離させることよりなる。The pressure-sensitive adhesive of the present invention is a pressure-sensitive adhesive for fixing a semiconductor wafer during processing of the semiconductor wafer and is characterized by containing a gas generating agent. Further, the semiconductor wafer processing method of the present invention comprises fixing the wafer with an adhesive containing a gas generating agent, dicing the wafer, and using an electromagnetic wave such as visible light, ultraviolet rays, or X-rays or an electron beam to generate the gas generating agent. To generate a gas from the wafer and peel the wafer.
【０００６】ガス発生剤は、半導体ウエハーに対して機
械的・熱的負荷が加わらないように可視光線、紫外線、
エックス線等の電磁波または電子線によってガスを発生
するものが望ましい。かかるガス発生剤としては、アジ
ド基を有する化合物を含むものが好ましい。アジド基
は、光線特に紫外線等の電磁波を吸収すると、分解して
比較的安定な窒素分子をガスとして放出するからであ
る。すなわち、粘着剤としてアジド基を有する化合物を
含む場合には、紫外線照射により分解して窒素ガスを放
出し、ウエハーと粘着剤の間に放出された窒素ガスがウ
エハーと粘着剤の接触面積を減少させ、あるいはガス圧
により界面剥離を促すことにより粘着剤の易剥離性を大
幅に向上させることができるのである。The gas generating agent is a visible light ray, an ultraviolet ray, or a ultraviolet ray so that a mechanical and thermal load is not applied to the semiconductor wafer.
Those that generate gas by electromagnetic waves such as X-rays or electron rays are desirable. As such a gas generating agent, one containing a compound having an azide group is preferable. This is because the azide group decomposes and releases a relatively stable nitrogen molecule as a gas when it absorbs a light ray, especially an electromagnetic wave such as an ultraviolet ray. That is, when a compound having an azido group is contained as an adhesive, it is decomposed by ultraviolet irradiation to release nitrogen gas, and the nitrogen gas released between the wafer and the adhesive reduces the contact area between the wafer and the adhesive. Alternatively, or the interfacial peeling is promoted by gas pressure, whereby the easy peeling property of the pressure-sensitive adhesive can be greatly improved.
【０００７】アジド基を有する化合物としては、アジ化
ソーダをはじめとし、具体的に化学式を特定する資料と
して、Ａ．Ｍ．Ｈelmy等が20th Joint Propulsion Conf
erence(Ohio,1984) にて講演した標題「Investigation
of New Energetic Ingredient for MInimum Signature
Propellants 」の紀要に記載されるアジド基含有化合物
が知られている。特に合成のしやすさ、取り扱い性（安
全性）等からアジドメチル(Methylazido) 基を有する化
合物が好ましい。例えば、ＧＡＰ(3,3-bis azidomethyl
oxetane) 、ＡＭＭＯ(3-azidomethyl-3 methyloxetan
e) 、ＢＡＭＯ(3,3-bis azidomethyl oxetane) 等が挙
げられる。モノマーの状態でも、ポリマー化して用いて
もよい。アジドメチル基を有する化合物の紫外線による
分解機構は、本発明者等が、取り扱い安全性の面で検討
した結果を公開している( 「工業火薬」第５１巻第４
号，P.240-245, 1990 ）。Examples of the compound having an azido group include sodium azide, and A. M. Helmy et al. 20th Joint Propulsion Conf
erence (Ohio, 1984) gave the title "Investigation
of New Energetic Ingredient for MInimum Signature
Azido group-containing compounds described in the Propellants bulletin are known. In particular ease of synthesis, compounds having azidomethyl (Methylazido) groups from such handling property (safety) is preferred. For example, GAP (3,3-bis azidomethyl
oxetane), AMMO (3-azidomethyl-3 methyloxetan
e), BAMO (3,3-bis azidomethyl oxetane) and the like. It may be used in the state of a monomer or in the form of a polymer. Regarding the mechanism of decomposition of a compound having an azidomethyl group by ultraviolet rays, the present inventors have published the results of examination in terms of handling safety (“Industrial explosives”, Vol. 51, Vol. 4).
No., P.240-245, 1990).
【０００８】本発明の粘着剤は、紫外線、電離性放射
線、電子線等の照射により粘着剤層が硬化する紫外線硬
化型の粘着剤を含むことが望ましい。前述したように、
一般に紫外線硬化型粘着剤は高い粘着力を有し、ダイシ
ング後に紫外線照射により硬化してウエハーと粘着テー
プとの粘着力を低下させることができるからである。す
なわち、本発明の一実施態様においては、前記紫外線硬
化型粘着剤に対して更に紫外線照射によってガスを発生
するガス発生剤を含ませることにより、紫外線照射され
た際に内部から分解ガスを発生させて、ウエハーと粘着
剤間の接触面積を減少させ、あるいはガス圧により飛躍
的に易剥離性を向上させるものである。The pressure-sensitive adhesive of the present invention preferably contains a UV-curable pressure-sensitive adhesive which cures the pressure-sensitive adhesive layer by irradiation with ultraviolet rays, ionizing radiation, electron beams and the like. As previously mentioned,
This is because the UV-curable adhesive generally has a high adhesive force and can be cured by irradiation with ultraviolet rays after dicing to reduce the adhesive force between the wafer and the adhesive tape. That is, in one embodiment of the present invention, a gas generating agent that further generates a gas by ultraviolet irradiation is added to the ultraviolet curable adhesive to generate a decomposed gas from the inside when the ultraviolet irradiation is performed. The contact area between the wafer and the pressure-sensitive adhesive is reduced, or the easy peelability is dramatically improved by the gas pressure.
【０００９】一般に紫外線硬化型粘着剤は、粘着力を有
するアクリル系粘着剤、光重合性オリゴマーおよび光開
始剤をブレンドして調整されるが、紫外線硬化型粘着剤
にアジド基含有化合物等のガス発生剤を含ませる場合
は、その配合割合は、必要に応じて粘着力、易剥離性の
程度を考慮して決めればよい。本発明の粘着剤は、平板
またはフィルムを用いてシート状または巻き取り易いよ
うにテープ状にされて提供されることが好ましい。粘着
剤が紫外線等の電磁波によってガスを発生するものであ
る場合は、平板またはフィルムは紫外線透過基材のもの
とすることが望ましい。Generally, the UV-curable pressure-sensitive adhesive is prepared by blending an acrylic pressure-sensitive adhesive having a pressure-sensitive adhesive force, a photopolymerizable oligomer and a photoinitiator, and the UV-curable pressure-sensitive adhesive is mixed with a gas such as an azide group-containing compound. When a generator is included, its blending ratio may be determined in consideration of the adhesive strength and the degree of easy peeling, if necessary. The pressure-sensitive adhesive of the present invention is preferably provided in the form of a sheet using a flat plate or a film or in the form of a tape for easy winding. When the pressure-sensitive adhesive is one that generates gas by electromagnetic waves such as ultraviolet rays, it is desirable that the flat plate or film is made of an ultraviolet-transparent substrate.
【００１０】本発明の粘着剤を用いた半導体ウェハーの
加工方法は、前記したように電磁波等によってガスを発
生させてウェハーを剥離させるものであるが、従来用い
られている紫外線硬化型粘着テープで使用される装置を
そのまま利用して実施できるなど利点が多い。以下に、
本発明を実施例によって更に具体的に説明する。本発明
の効果を実証するために、以下３種の模擬的実験を実施
した。すなわち、ガス発生剤としてアジド基含有化合物
を単独で用いた場合、および、他の紫外線硬化型樹脂と
併用した場合の紫外線照射によるガス発生特性を実証し
た。The method of processing a semiconductor wafer using the adhesive of the present invention is to generate a gas by electromagnetic waves or the like to separate the wafer as described above. There are many advantages such as the fact that the equipment used can be used as it is. less than,
The present invention will be described more specifically by way of examples. In order to demonstrate the effect of the present invention, the following three types of simulated experiments were conducted. That is, the gas generation characteristics by ultraviolet irradiation were demonstrated when an azido group-containing compound was used alone as a gas generating agent and when it was used in combination with another ultraviolet curable resin.
【００１１】[0011]
【実施例１】米国特許第4,268,450号の開示に従ってGAP
ポリマーを合成した。本ポリマーを薄く（約３ｍｍ）延
ばし、上部に顕微鏡用カバーガラス板（１８×１８ｍ
ｍ）を乗せ、上部から、紫外線照射（１１５V、６０H
z、０．１６A）を行った。その結果、ガラス板とポリマ
ーの間に窒素ガスと推定される気泡が多数発生すること
を確認した。Example 1 GAP in accordance with the disclosure of US Pat. No. 4,268,450
A polymer was synthesized. The polymer was thinly spread (about 3 mm), and a microscope cover glass plate (18 x 18 m) was placed on top.
m), and irradiate ultraviolet rays (115V, 60H) from the top.
z, 0.16 A). As a result, it was confirmed that many bubbles presumed to be nitrogen gas were generated between the glass plate and the polymer.
【００１２】[0012]
【実施例２】実施例１と同じ方法で合成したGAPポリマ
ー（分子量約２５００、両末端OH基含有）１００ｇにIP
DI（イソホロンジイソシアネート）を３．６ｇ、TPA−1
00（ヘキサメチレンジイソシアネートのアダクト物；旭
化成工業株式会社製）を８．７ｇ入れ、均一混合した後
薄く延ばし、６０℃で加温して硬化させ、その状態でガ
ラス板を乗せて密着させた。その状態で紫外線を実施例
１と同様に照射し、状態を観察した結果、数分後、密着
面が内部から発生したガスにより剥がれて一部浮き上が
るような状態となった。Example 2 IP was added to 100 g of GAP polymer (molecular weight about 2500, containing OH groups at both ends) synthesized by the same method as in Example 1.
3.6 g of DI (isophorone diisocyanate), TPA-1
8.7 g of 00 (hexamethylene diisocyanate adduct; manufactured by Asahi Kasei Kogyo Co., Ltd.) was added, uniformly mixed, and then thinly spread, and heated and cured at 60 ° C., and a glass plate was placed and adhered in that state. In that state, ultraviolet rays were irradiated in the same manner as in Example 1, and the state was observed. As a result, after a few minutes, the contact surface was peeled off by the gas generated from the inside and partly floated.
【００１３】[0013]
【実施例３】上記ポリマーを旭化成工業株式会社製APR
樹脂（感光性樹脂、カルボン酸変性したポリウレタン樹
脂）と１：１の割合で混合し、上記と同様に薄く延ば
し、ガラス板を置き、紫外線を照射した。その結果、ポ
リマーの硬化中及び硬化後もガスの発生がみられた。そ
の後、太陽光に約３０分間さらした結果、ガラス板とポ
リマーの一部剥離が観察され、手で力を加えると容易に
外すことができた。[Example 3] APR manufactured by Asahi Kasei Kogyo Co., Ltd.
A resin (photosensitive resin, carboxylic acid-modified polyurethane resin) was mixed at a ratio of 1: 1 and thinly spread in the same manner as above, a glass plate was placed, and ultraviolet rays were irradiated. As a result, gas generation was observed during and after the curing of the polymer. Then, as a result of exposing to the sunlight for about 30 minutes, partial peeling of the glass plate and the polymer was observed, and it was possible to easily remove it by applying force by hand.
【００１４】[0014]
【比較例１】実施例３と同じ方法でポリマーをＰＰＧ
（ポリプロピレングリコール）を用い、実施した。ガラ
ス板とポリマーは密着したまま硬化しており、ガラス板
を割ることなしに手で外すことはできそうにない状態で
あった。COMPARATIVE EXAMPLE 1 PPG was added to the polymer in the same manner as in Example 3.
(Polypropylene glycol) was used. The glass plate and the polymer were hardened while being in close contact, and it was unlikely that they could be removed by hand without breaking the glass plate.
【００１５】[0015]
【発明の効果】以上説明したように、本発明は、半導体
ウェハーを固定するための粘着剤及びその粘着剤を用い
た半導体ウェハーの加工方法として、粘着剤にガス発生
剤を含ませることにより、半導体ウエハーを固定してダ
イシングして後、ウエハーを剥離させることを非常に容
易としたものである。特にガス発生剤としてアジド基を
有する化合物を含ませることにより、紫外線等を照射し
た場合に、単独の状態、硬化した状態、他物質との併用
の状態でもガスを放出し、ウエハーを剥離させることを
より容易としたものである。As described above, according to the present invention, as a pressure-sensitive adhesive for fixing a semiconductor wafer and a method for processing a semiconductor wafer using the pressure-sensitive adhesive, by including a gas generating agent in the pressure-sensitive adhesive, It is very easy to peel the wafer after fixing the semiconductor wafer and dicing it. In particular, by including a compound having an azide group as a gas generating agent, when irradiated with ultraviolet rays or the like, the gas is released even in a single state, a cured state, or a state in which it is used in combination with other substances, thereby peeling the wafer. Is made easier.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｌ 21/78 Ｍ Ｑ (56)参考文献 特開 平３−152942（ＪＰ，Ａ) 特開 昭63−30581（ＪＰ，Ａ) 特開 平２−248064（ＪＰ，Ａ) 特開 平５−279637（ＪＰ，Ａ) 特開 平７−142623（ＪＰ，Ａ) 特開 昭64−27213（ＪＰ，Ａ) 特開2001−226650（ＪＰ，Ａ) 特開2001−203255（ＪＰ，Ａ) 特開2000−169808（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C09J 4/00 - 201/10 H01L 21/301 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI H01L 21/78 MQ (56) Reference JP-A-3-152942 (JP, A) JP-A-63-30581 (JP, A) ) JP-A-2-248064 (JP, A) JP-A-5-279637 (JP, A) JP-A-7-142623 (JP, A) JP-A- 64-27213 (JP, A) JP-A-2001-226650 (JP, A) JP 2001-203255 (JP, A) JP 2000-169808 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) C09J 4/00-201/10 H01L 21/301
Claims (6)
定するための粘着剤であって、可視光線、紫外線、エッ
クス線等の電磁波または電子線によってガスを発生する
ガス発生剤を含み、該ガス発生剤がアジド基を有する有
機化合物であることを特徴とする粘着剤。1. A pressure-sensitive adhesive for fixing the wafer during processing of semiconductor wafers, visible light, ultraviolet light, seen containing a gas generating agent which generates a gas by electromagnetic or electron beam, such as X-rays, the gas generating agent Has an azido group
Adhesive which is a machine compound.
であることを特徴とする請求項１記載の粘着剤。2. An organic compound having an azide group is a polymer.
The pressure-sensitive adhesive according to claim 1, wherein
であることを特徴とする請求項１記載の粘着剤。3. An organic compound having an azide group is a monomer
The pressure-sensitive adhesive according to claim 1, wherein
を特徴とする請求項１〜３のいずれかに記載の粘着剤。4. The pressure-sensitive adhesive according to claim 1 , wherein the azido group is an azidomethyl group .
求項１〜４のいずれかに記載の粘着剤。5. The pressure-sensitive adhesive according to claim 1, which contains a UV-curable pressure-sensitive adhesive.
状にされた請求項１〜５のいずれかに記載の粘着剤。Adhesive according to any one of claims 1 to 5 which is in sheet or tape form using 6. Film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000013070A JP3526802B2 (en) | 2000-01-21 | 2000-01-21 | Adhesive for fixing semiconductor wafer and processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000013070A JP3526802B2 (en) | 2000-01-21 | 2000-01-21 | Adhesive for fixing semiconductor wafer and processing method |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002004144A Division JP3526845B2 (en) | 2002-01-11 | 2002-01-11 | Separation accelerator for semiconductor wafer |
| JP2002004178A Division JP3532186B2 (en) | 2002-01-11 | 2002-01-11 | Semiconductor wafer processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001200234A JP2001200234A (en) | 2001-07-24 |
| JP3526802B2 true JP3526802B2 (en) | 2004-05-17 |
Family
ID=18540714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000013070A Expired - Lifetime JP3526802B2 (en) | 2000-01-21 | 2000-01-21 | Adhesive for fixing semiconductor wafer and processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3526802B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100878971B1 (en) * | 2001-08-03 | 2009-01-19 | 세키스이가가쿠 고교가부시키가이샤 | Double-sided adhesive tape and manufacturing method of IC chip using same |
| KR20040105546A (en) * | 2002-01-15 | 2004-12-16 | 세키스이가가쿠 고교가부시키가이샤 | Ic chip manufacturing method |
| AU2003236002A1 (en) * | 2002-04-11 | 2003-10-20 | Disco Corporation | Method for manufacturing semiconductor chip |
| JP4565804B2 (en) * | 2002-06-03 | 2010-10-20 | スリーエム イノベイティブ プロパティズ カンパニー | Laminate including ground substrate, method for producing the same, method for producing ultrathin substrate using laminate, and apparatus therefor |
| US7534498B2 (en) * | 2002-06-03 | 2009-05-19 | 3M Innovative Properties Company | Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body |
| JP4674070B2 (en) * | 2003-11-12 | 2011-04-20 | 積水化学工業株式会社 | Manufacturing method of semiconductor chip |
| JPWO2005071035A1 (en) * | 2004-01-26 | 2007-09-06 | 株式会社御池鐵工所 | Adhered member and peeling method thereof |
| JP4629992B2 (en) * | 2004-03-31 | 2011-02-09 | 古河電気工業株式会社 | Adhesive tape for fixing semiconductor wafers |
| JP2006152141A (en) * | 2004-11-30 | 2006-06-15 | Furukawa Electric Co Ltd:The | Adhesive tape |
| JP2006160954A (en) * | 2004-12-09 | 2006-06-22 | Sekisui Chem Co Ltd | Adhesive sheet |
| KR100688826B1 (en) | 2005-01-20 | 2007-03-02 | 삼성전기주식회사 | Rigid-Flexible Printed Circuit Board Manufacturing Method |
| JP4974513B2 (en) * | 2005-11-28 | 2012-07-11 | 旭化成ケミカルズ株式会社 | Easy-to-disassemble structural adhesive |
| JP5788528B2 (en) | 2011-12-14 | 2015-09-30 | 三井化学東セロ株式会社 | Adhesive resin composition, laminate and self-peeling method |
| WO2014192631A1 (en) | 2013-05-31 | 2014-12-04 | 三井化学東セロ株式会社 | Electronic member peeling method and laminated body |
| WO2015029723A1 (en) * | 2013-08-30 | 2015-03-05 | Jsr株式会社 | Adherend recovery method, adherend recovery device, gas generation membrane, and resin composition |
| KR101661619B1 (en) * | 2014-11-05 | 2016-09-30 | 율촌화학 주식회사 | Gas inducing adhesive film, flexible display including thereof, and method of manufacturing flexible display device using thereof |
| JP6989269B2 (en) * | 2016-05-11 | 2022-01-05 | 積水化学工業株式会社 | Manufacturing method of semiconductor package |
| WO2022157830A1 (en) * | 2021-01-19 | 2022-07-28 | 株式会社新川 | Method for manufacturing semiconductor device |
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2000
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