JP3559333B2 - Magnetic multilayer film, method of manufacturing the same, and magneto-optical recording medium - Google Patents
Magnetic multilayer film, method of manufacturing the same, and magneto-optical recording medium Download PDFInfo
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- JP3559333B2 JP3559333B2 JP33918894A JP33918894A JP3559333B2 JP 3559333 B2 JP3559333 B2 JP 3559333B2 JP 33918894 A JP33918894 A JP 33918894A JP 33918894 A JP33918894 A JP 33918894A JP 3559333 B2 JP3559333 B2 JP 3559333B2
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- 230000005291 magnetic effect Effects 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims description 11
- 238000002441 X-ray diffraction Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000010408 film Substances 0.000 description 59
- 239000010410 layer Substances 0.000 description 41
- 230000005415 magnetization Effects 0.000 description 7
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 7
- 239000002356 single layer Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 241000238366 Cephalopoda Species 0.000 description 1
- 229910002552 Fe K Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/325—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being noble metal
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- Thin Magnetic Films (AREA)
Description
【0001】
【産業上の利用分野】
本発明は、磁気光学カー回転を示す磁性多層膜およびその製造方法と、この磁性多層膜を光磁気記録膜として有する光磁気記録媒体とに関する。
【0002】
【従来の技術】
異種金属を原子層レベルで交互に積層し得る今日の薄膜作製技術により、自然界には存在しないような規則的積層構造をもつ多層膜、すなわち金属人工格子の作製が可能となっている。
【0003】
Mat.Res.Soc.Symp.Proc.,151,123(1989)(以下、文献1)では、Fe(110)配向のFe/Au人工格子膜において[Fe(4 A)/Au(28 A)]10のとき、実効的な垂直磁気異方性エネルギー定数が1.3×106 erg/cm3 であることが報告されている。
【0004】
また、日本応用磁気学会誌,14,343(1990) (以下、文献2)では、Fe(001)/Au(001)配向の人工格子膜である[Fe(1.5 A)/Au(29A)]20を作製したことが報告されている。この人工格子膜の実効的な垂直磁気異方性エネルギー定数は、2.5×106 erg/cm3 である。文献2では、実効的な垂直磁気異方性エネルギー定数をK⊥で表わしており、文献2のFig.5では、tFe=2.0 AのときtFeK⊥=0.05erg/cm2 である。したがって、K⊥=0.05/(2×10−8)=2.5×106 erg/cm3 となる。
【0005】
しかし、文献1および文献2にそれぞれ記載されている人工格子膜では、垂直磁気異方性が大きくないため良好な垂直磁化膜が得られず、垂直磁気記録膜や光磁気記録媒体の光磁気記録膜として実用化することは難しい。また、上記した従来のFe/Au多層膜では、Au層厚が28 A以上と厚く、層厚比Fe/Auを1/7以下としなければ垂直磁化膜にならなかった。そのため、カー回転角が小さくなってしまい、光磁気記録膜には不適である。
【0006】
【発明が解決しようとする課題】
本発明の目的は、垂直磁気異方性が大きく、しかもカー回転角の大きい磁性多層膜と、この磁性多層膜を光磁気記録膜に用いた光磁気記録媒体とを提供することである。
【0007】
【課題を解決するための手段】
このような目的は、下記(1)〜(5)のいずれかの構成により達成される。
(1)基板上に、FeまたはCrからなる厚さ5〜20 A のシード層およびAu、PtまたはAgからなる厚さ150〜3000 A のバッファ層を介して形成された磁性多層膜であり、
Fe単原子層とAu単原子層とが1層づつ積層されており、(001)面配向を有する磁性多層膜。
(2)X線回折チャートにおいて、(001)面配向を示すピークだけが認められる上記(1)の磁性多層膜。
(3)基板上に、FeまたはCrからなる厚さ5〜20 A のシード層およびAu、PtまたはAgからなる厚さ150〜3000 A のバッファ層を順次形成した後、蒸着法によりFe単原子層とAu単原子層とを交互に積層して規則合金膜を形成する磁性多層膜の製造方法。
(4)上記(1)または(2)の磁性多層膜が形成される上記(3)の磁性多層膜の製造方法。
(5)上記(1)または(2)の磁性多層膜を光磁気記録膜として有する光磁気記録媒体。
【0008】
【作用および効果】
本発明では、従来知られている単なる人工格子膜とは異なり、Fe単原子層とAu単原子層とを交互に1層づつ積層し、(001)面配向を有する規則合金と等価である磁性人工格子多層膜を得る。このような規則合金と等価なFe/Au多層膜は、本発明により初めて実現したものである。この磁性多層膜は、超高真空蒸着法により形成することが好ましい。
【0009】
このようにして作製された多層膜は、垂直磁気異方性定数が大きいため良好な垂直磁化膜となり、また、カー回転角が大きいため、垂直磁気記録膜や光磁気記録膜として有用である。
【0010】
なお、上記文献1および文献2にそれぞれ記載されている人工格子膜は、Fe単原子層とAu単原子層とを積層したものではなく、本発明の磁性多層膜とは異なる。
【0011】
【実施例】
以下、本発明の実施例を挙げ、本発明を詳細に説明する。
【0012】
到達真空度を3×10−10 Torrとし、MgO(001)基板上に、2×10−9Torr未満の圧力下で厚さ10 AのFe(001)シード層を蒸着法により形成した後、厚さ500 AのAu(001)バッファ層を蒸着法により形成し、次いで500℃でアニールした。各層形成時の基板温度(Ts)は200℃とした。基板としては、MgO(001)の他、GaAs(001)、Si(001)等を用いてもよい。バッファ層としては、Au(001)の他、Pt(001)、Ag(001)等を用いてもよい。バッファ層の厚さは、150〜3000 A程度とすることが好ましい。バッファ層と基板との間に設けられるシード層は結晶成長を促進するためのものであり、特にバッファ層としてAu層を用いる場合には、このシード層を設けることが好ましい。シード層の厚さは、5〜20 A程度とすることが好ましい。シード層には、Feに限らずCrなどを用いてもよい。基板上のシード層およびバッファ層形成時の温度は、室温〜500℃程度とすることが好ましい。
【0013】
次いで、バッファ層の上に、前記圧力下で[Fe(1ML)/Au(1ML)]100 多層膜を形成した。基板温度は70℃とした。蒸着装置には、2つの独立した電子銃をもつものを用いた。1MLは単原子層を意味する。Fe(1ML)の厚さは1.4 A、Au(1ML)の厚さは2.0 Aであり、この多層膜は、Fe(1ML)+Au(1ML)を1単位として100単位積層したものである。蒸着レートは0.1 A/min とした。蒸着中にはRHEED(Reflection High Energy Electron Diffraction )パターンをモニターし、(001)配向の単原子層が1層づつエピタキシャル成長していることを確認した。
【0014】
多層膜形成時の基板温度は、通常、室温〜300℃とすることが好ましい。また、Fe(1ML)+Au(1ML)を1単位としたときの積層単位数は特に限定されないが、通常、10〜300程度とすることが好ましい。なお、多層膜形成時の圧力は、好ましくは1×10−8Torr以下とし、より好ましくは1×10−10 〜3×10−9Torr程度とする。
【0015】
図1〜4に示すRHEEDパターンは、図1がAuバッファ層、図2が第1層であるFe層、図3が第2層であるAu層、図4が最上層であるAu層のものである。これらは、すべてAu[110]入射のものである。各図の縞状のパターンから、各膜の表面が原子スケールでかなり平坦であること、Fe単原子層およびAu単原子層が一層づつエピタキシャル成長した膜が形成されたことがわかる。図5に、この多層膜のX線回折チャートを示す。図5中には、一部のピークを拡大して示してある。このX線回折チャートには(001)面配向を示すピークが認められ、しかも他の配向を示すピークは認められない。このことから、原子レベルで規則構造をもつ膜が形成されていることがわかる。
【0016】
この多層膜の磁気異方性を、室温でSQUID 磁気メータにより測定した。図6に、この多層膜の、膜面に対して平行(H//)および垂直(H⊥)方向の磁化カーブを示す。この磁化カーブから、この多層膜が大きな垂直磁気異方性を有することがわかる。
【0017】
この多層膜の波長(λ)633nmでの磁気光学カー回転角(θk )を、室温で測定した。図7に、磁界強度とカー回転角との関係を示すカーループを示す。同図に示されるように、この多層膜の633nmでの飽和カー回転角は0.25度であった。
【0018】
この多層膜の実効的な垂直磁気異方性定数は8.5×106 erg/cm3 であった。この値は、前記文献1および文献2の実効的な垂直磁気異方性エネルギー定数と比較されるものである。したがって、本発明により、前記文献1および文献2に記載の人工格子膜よりも良好な垂直磁気異方性が得られることがわかる。また、この多層膜において、実効的な垂直磁気異方性定数に形状異方性2πMs2 を加えた本質的な垂直磁気異方性定数は、1.1×107 erg/cm3 であった。なお、飽和磁化Msは650emu/ccであった。
【図面の簡単な説明】
【図1】結晶構造を表わす図面代用写真であって、[Fe(1ML)/Au(1ML)]100多層膜の下地として設けられたAuバッファ層のRHEEDパターンである。
【図2】結晶構造を表わす図面代用写真であって、[Fe(1ML)/Au(1ML)]100多層膜の第1層目であるFe層のRHEEDパターンである。
【図3】結晶構造を表わす図面代用写真であって、[Fe(1ML)/Au(1ML)]100多層膜の第2層目であるAu層のRHEEDパターンである。
【図4】結晶構造を表わす図面代用写真であって、[Fe(1ML)/Au(1ML)]100多層膜の最上眉であるAu層のRHEEDパターンである。
【図5】[Fe(1ML)/Au(1ML)]100多層膜のX線回折チャートである。
【図6】[Fe(1ML)/Au(1ML)]100多層膜の磁化ループである。
【図7】[Fe(1ML)/Au(1ML)]100多層膜のカーループである。[0001]
[Industrial applications]
The present invention relates to a magnetic multilayer film exhibiting magneto-optical Kerr rotation, a method of manufacturing the same, and a magneto-optical recording medium having the magnetic multilayer film as a magneto-optical recording film.
[0002]
[Prior art]
Today's thin film fabrication technology, in which dissimilar metals can be alternately laminated at the atomic layer level, enables the production of multilayer films having a regular laminated structure that does not exist in nature, that is, metal artificial lattices.
[0003]
Mat. Res. Soc. Symp. Proc. , 151, 123 (1989) (hereinafter referred to as Reference 1), when [Fe (4A) / Au (28A)] 10 is used in an Fe / Au artificial lattice film with an Fe (110) orientation, an effective perpendicular magnetic field is obtained. It is reported that the anisotropic energy constant is 1.3 × 10 6 erg / cm 3 .
[0004]
In the Journal of the Japan Society of Applied Magnetics, 14, 343 (1990) (hereinafter referred to as Reference 2), an artificial lattice film of Fe (001) / Au (001) orientation [Fe (1.5 A) / Au (29A) )] it has been reported that was prepared 20. The effective perpendicular magnetic anisotropy energy constant of this artificial lattice film is 2.5 × 10 6 erg / cm 3 . In
[0005]
However, in the artificial lattice films described in
[0006]
[Problems to be solved by the invention]
An object of the present invention is to provide a magnetic multilayer film having a large perpendicular magnetic anisotropy and a large Kerr rotation angle, and a magneto-optical recording medium using this magnetic multilayer film as a magneto-optical recording film.
[0007]
[Means for Solving the Problems]
Such an object is achieved by any one of the following constitutions (1) to (5).
(1) a magnetic multilayer film formed on a substrate via a seed layer of Fe or Cr having a thickness of 5 to 20 A and a buffer layer of Au, Pt or Ag having a thickness of 150 to 3000 A ;
A magnetic multilayer film in which a single atomic layer of Fe and a single atomic layer of Au are stacked one by one and have a (001) plane orientation.
(2) The magnetic multilayer film according to the above (1), wherein only a peak showing (001) plane orientation is recognized in the X-ray diffraction chart.
(3) A seed layer made of Fe or Cr and having a thickness of 5 to 20 A and a buffer layer made of Au, Pt or Ag having a thickness of 150 to 3000 A are sequentially formed on a substrate, and then a single atom of Fe is formed by vapor deposition. A method for manufacturing a magnetic multilayer film in which layers and Au monoatomic layers are alternately stacked to form an ordered alloy film.
(4) The method for manufacturing a magnetic multilayer film according to (3), wherein the magnetic multilayer film according to (1) or (2) is formed.
(5) A magneto-optical recording medium having the magnetic multilayer film of (1) or (2) as a magneto-optical recording film.
[0008]
[Action and effect]
In the present invention, unlike a conventionally known mere artificial lattice film, a monolayer of Fe and a monolayer of Au are alternately stacked one by one, and the magnetic property is equivalent to an ordered alloy having a (001) plane orientation. Obtain an artificial lattice multilayer film. Such an Fe / Au multilayer film equivalent to an ordered alloy was first realized by the present invention. This magnetic multilayer film is preferably formed by an ultra-high vacuum deposition method.
[0009]
The multilayer film thus manufactured has a large perpendicular magnetic anisotropy constant and therefore is a good perpendicular magnetization film, and has a large Kerr rotation angle, and is useful as a perpendicular magnetic recording film and a magneto-optical recording film.
[0010]
The artificial lattice films described in
[0011]
【Example】
Hereinafter, the present invention will be described in detail with reference to examples of the present invention.
[0012]
The ultimate vacuum degree was set to 3 × 10 −10 Torr, and a 10 A-thick Fe (001) seed layer was formed on a MgO (001) substrate under a pressure of less than 2 × 10 −9 Torr by a vapor deposition method. A 500 A thick Au (001) buffer layer was formed by evaporation and then annealed at 500 ° C. The substrate temperature (Ts) at the time of forming each layer was 200 ° C. As the substrate, GaAs (001), Si (001), or the like may be used in addition to MgO (001). As the buffer layer, Pt (001), Ag (001), or the like may be used in addition to Au (001). It is preferable that the thickness of the buffer layer be about 150 to 3000 A. The seed layer provided between the buffer layer and the substrate is for promoting crystal growth. In particular, when an Au layer is used as the buffer layer, it is preferable to provide this seed layer. The thickness of the seed layer is preferably about 5 to 20A. The seed layer is not limited to Fe but may be Cr or the like. The temperature at the time of forming the seed layer and the buffer layer on the substrate is preferably from room temperature to about 500 ° C.
[0013]
Next, a [Fe (1ML) / Au (1ML)] 100 multilayer film was formed on the buffer layer under the above pressure. The substrate temperature was 70 ° C. A vapor deposition apparatus having two independent electron guns was used. 1 ML means a monoatomic layer. The thickness of Fe (1ML) is 1.4 A, the thickness of Au (1ML) is 2.0 A, and this multilayer film is obtained by stacking 100 units of Fe (1ML) + Au (1ML) as one unit. It is. The deposition rate was 0.1 A / min. During the vapor deposition, a RHEED (Reflection High Energy Electron Diffraction) pattern was monitored, and it was confirmed that the (001) oriented monoatomic layers were epitaxially grown one by one.
[0014]
Usually, the substrate temperature during the formation of the multilayer film is preferably from room temperature to 300 ° C. Further, the number of lamination units when Fe (1 ML) + Au (1 ML) is one unit is not particularly limited, but is usually preferably about 10 to 300. The pressure at the time of forming the multilayer film is preferably 1 × 10 −8 Torr or less, and more preferably about 1 × 10 −10 to 3 × 10 −9 Torr.
[0015]
The RHEED patterns shown in FIGS. 1 to 4 are those in which FIG. 1 shows an Au buffer layer, FIG. 2 shows an Fe layer as a first layer, FIG. 3 shows an Au layer as a second layer, and FIG. 4 shows an Au layer as an uppermost layer. It is. These are all Au [110] incident. From the striped pattern in each figure, it can be seen that the surface of each film is fairly flat on the atomic scale, and that a film is formed by epitaxially growing one monolayer of Fe and one monolayer of Au. FIG. 5 shows an X-ray diffraction chart of this multilayer film. In FIG. 5, some peaks are shown enlarged. In the X-ray diffraction chart, a peak indicating (001) plane orientation is observed, and no peak indicating another orientation is observed. This indicates that a film having a regular structure at the atomic level was formed.
[0016]
The magnetic anisotropy of this multilayer film was measured at room temperature with a SQUID magnetometer. FIG. 6 shows the magnetization curves of this multilayer film in the directions parallel (H //) and perpendicular (H⊥) to the film surface. From this magnetization curve, it can be seen that this multilayer film has a large perpendicular magnetic anisotropy.
[0017]
The magneto-optical Kerr rotation angle (θ k ) of this multilayer film at a wavelength (λ) of 633 nm was measured at room temperature. FIG. 7 shows a Kerr loop showing the relationship between the magnetic field strength and the Kerr rotation angle. As shown in the figure, the saturation Kerr rotation angle at 633 nm of this multilayer film was 0.25 degrees.
[0018]
The effective perpendicular magnetic anisotropy constant of this multilayer film was 8.5 × 10 6 erg / cm 3 . This value is to be compared with the effective perpendicular magnetic anisotropy energy constant of the above-mentioned
[Brief description of the drawings]
FIG. 1 is a drawing substitute photograph showing a crystal structure, and is a RHEED pattern of an Au buffer layer provided as a base of a [Fe (1ML) / Au (1ML)] 100 multilayer film.
FIG. 2 is a drawing substitute photograph showing a crystal structure, and is a RHEED pattern of an Fe layer which is a first layer of a [Fe (1ML) / Au (1ML)] 100 multilayer film.
FIG. 3 is a drawing substitute photograph showing a crystal structure, and is a RHEED pattern of an Au layer which is a second layer of the [Fe (1ML) / Au (1ML)] 100 multilayer film.
FIG. 4 is a drawing substitute photograph showing a crystal structure, and is a RHEED pattern of an Au layer which is the uppermost eyebrow of a [Fe (1ML) / Au (1ML)] 100 multilayer film.
FIG. 5 is an X-ray diffraction chart of a [Fe (1ML) / Au (1ML)] 100 multilayer film.
FIG. 6 is a magnetization loop of a [Fe (1ML) / Au (1ML)] 100 multilayer film.
FIG. 7 is a Kerr loop of [Fe (1ML) / Au (1ML)] 100 multilayer film.
Claims (5)
Fe単原子層とAu単原子層とが1層づつ積層されており、(001)面配向を有する磁性多層膜。 A magnetic multilayer film formed on a substrate via a 5 to 20 A thick seed layer made of Fe or Cr and a 150 to 3000 A thick buffer layer made of Au, Pt, or Ag ;
A magnetic multilayer film in which a single atomic layer of Fe and a single atomic layer of Au are stacked one by one and have a (001) plane orientation.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33918894A JP3559333B2 (en) | 1994-12-28 | 1994-12-28 | Magnetic multilayer film, method of manufacturing the same, and magneto-optical recording medium |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33918894A JP3559333B2 (en) | 1994-12-28 | 1994-12-28 | Magnetic multilayer film, method of manufacturing the same, and magneto-optical recording medium |
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| Publication Number | Publication Date |
|---|---|
| JPH08186023A JPH08186023A (en) | 1996-07-16 |
| JP3559333B2 true JP3559333B2 (en) | 2004-09-02 |
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| JP33918894A Expired - Lifetime JP3559333B2 (en) | 1994-12-28 | 1994-12-28 | Magnetic multilayer film, method of manufacturing the same, and magneto-optical recording medium |
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1994
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