JP3572293B2 - Current introduction terminal and vacuum processing apparatus having the same - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a current introduction terminal and a vacuum processing apparatus having the same, and more particularly, to a plasma CVD apparatus or a dry etching apparatus having a self-cleaning function of generating plasma of a cleaning gas and removing a Si film or the like by radicals thereof. It is useful.
[0002]
[Prior art]
For example, a plasma CVD apparatus is known as a film forming apparatus for forming an amorphous silicon film used for a solar cell. FIG. 5 shows an example of this type of plasma CVD apparatus according to the related art. As shown in FIG. 1, the plasma CVD apparatus has electrodes 3 and 4 which are disposed in a vacuum vessel 1 so as to face each other and are connected to a high frequency power supply 2. In the vacuum vessel 1, silane gas (SiH) is mainly used as a source gas in this case. ₄ ) And a high frequency (for example, 13.56 MHz to 100 MHz) power is applied between the electrodes 3 and 4. As a result, the silane gas (SiH ₄ ) Is formed, and radicals (primarily SiH ₃ A Si film is formed on the substrate 5 by utilizing a radical.
[0003]
Here, in the plasma CVD apparatus, one electrode 3 also has a function as a source gas supply unit. That is, the electrode 3 has a hollow portion into which a raw material gas supplied from the outside flows, and has a large number of holes 3a formed on a surface facing the other electrode 4, and through this hole 3a A source gas is supplied between the electrodes 3 and 4.
[0004]
The other electrode 4 places the substrate 5 on its surface and contacts the peripheral portion of the substrate 5 to press it toward the electrode 4 in order to maintain good adhesion between the substrate 5 and the electrode 4. It has a holding plate 6. The electrode 4 is configured to be heated by the heater 7. This is because by maintaining the electrode 4 and the substrate 5 at a predetermined temperature, the formation of a film on the substrate 5 is facilitated and excellent. Here, the heater 7 is disposed on the back side of the electrode 4 so as to face each other. Therefore, the electrode 4 also functions as a heater cover for plasma. In the figure, reference numeral 8 denotes a vacuum pump for evacuating the vacuum chamber 1.
[0005]
In the above-mentioned plasma CVD apparatus, since the high-frequency power supply 2 is provided outside the vacuum vessel 1 and the electrodes 3 and 4 are provided inside the vacuum vessel 1, the electric path from the high-frequency power supply 2 to the electrodes 3 and 4 is a vacuum. It is necessary to penetrate the container 1. FIG. 6 shows an extracted and enlarged view of the conventional structure of the current introduction terminal portion which is the penetrating portion. This figure is an extracted and enlarged part A of FIG.
[0006]
As shown in FIG. 6, the current introduction terminal has an insulating ceramic 11 which is a disc-shaped insulating material, and a feedthrough 12 formed by a rod of a conductive member penetrating the center of the insulating ceramic 11. ing. Here, the insulating ceramic 11 is fixed to the inner peripheral surface of a cylindrical sleeve 13 which is a conductive member via the outer peripheral surface, and the sleeve 13 is connected to the hole at the center of the flange member 14 via the outer peripheral surface. It is fitted and fixed. The flange member 14 is fixed to the wall surface of the vacuum vessel 1 from outside through a bolt 15. At this time, a hole 1a is provided in a part of the wall surface of the vacuum vessel 1, and the insulating ceramics 11, the feedthrough 12, and the sleeve 13 face the inside of the vacuum vessel 1 through the hole 1a. Therefore, the insulating ceramic 11 is fixed to the vacuum container 1 with one surface facing the inside of the vacuum container 1 and the other surface facing the outside of the vacuum container 1. The feedthrough 12 extends from the atmosphere side to the vacuum side through the central portion of the insulating ceramic 11, and has a cable (not shown) at its upper end and lower end via a connector (not shown). .) Are connected, and together with these cables, constitute an electric path from the high-frequency power supply 2 (see FIG. 5; the same applies hereinafter) to the electrode 3 (see FIG. 5; the same applies hereinafter). The large-sized electrode 3 uses a plurality of cables (not shown) in order to evenly supply high-frequency power, and a plurality of pairs of the field through 12 and the cables are provided.
[0007]
At the penetrating portion of the feed-through 12 in the insulating ceramic 11 and the contact portion between the insulating ceramic 11 and the sleeve 13, the two are joined to ensure good adhesion between them and maintain the airtight inside the vacuum vessel 1. Brazing portions 16a and 16b are formed. The brazing portions 16a and 16b are usually made of an Ag-Cu brazing material, and are formed on the side facing the inside of the vacuum vessel 1 (vacuum side). This is for suppressing outgassing from the vacuum side. In FIG. 6, reference numeral 17 denotes an O-ring, which is interposed between the flange member 14 and the wall surface of the vacuum vessel 1 in order to secure the airtightness of the vacuum vessel 1.
[0008]
At the time of film formation in the plasma CVD apparatus as described above, a Si film is also formed on a portion other than the substrate 5 and grows as the number of film forming processes is repeated. Therefore, it is necessary to periodically perform a cleaning process to remove the Si film adhering to portions other than the substrate 5 because the film is peeled off and causes defects and impurities in the film being formed. One of the cleaning methods at this time is a method called a self-cleaning method. In this self-cleaning method, a cleaning gas, such as NF, is used instead of the source gas. ₃ Is supplied into the vacuum vessel 1 to form the plasma between the electrodes 3 and 4 without opening the vacuum vessel 1, and the F radicals generated thereby act on the Si film to produce SiF. ₄ Gas is generated and exhausted.
[0009]
[Problems to be solved by the invention]
NF in the plasma CVD apparatus according to the above prior art ₃ In the cleaning process using the gas plasma, F radicals are generated, and the F radicals directly act on the brazing portions 16a and 16b of the current introducing terminals. This is because the brazing portions 16a and 16b face the vacuum side. At this time, the brazing portions 16a and 16b are formed of an Ag-Cu brazing material as described above. Therefore, the F radicals not only act on the Ag to evaporate the Ag, but also re-adhere as a thin film on the surface of the insulating ceramic 11 facing the vacuum vessel 1 (the surface on the vacuum side). This causes inconveniences such as short-circuiting. That is, predetermined insulation cannot be ensured, which causes electrical trouble.
[0010]
In view of the above prior art, an object of the present invention is to provide a current introduction terminal capable of maintaining stable insulation performance for a long period without being affected by plasma generated in a vacuum vessel, and a vacuum processing apparatus having the same. I do.
[0011]
[Means for Solving the Problems]
The configuration of the present invention that achieves the above object has the following features.
[0012]
1) A predetermined raw material gas is supplied to form a thin film on a substrate, or a cleaning gas for removing a film adhered in a vacuum container is supplied between electrodes provided in a vacuum container. A vacuum processing apparatus for applying a high-frequency voltage from a high-frequency power source provided outside the vacuum vessel to form a plasma of a source gas or a cleaning gas between the electrodes to perform a predetermined process such as film formation or cleaning. Current introduction terminal of
An insulating material fixed to the vacuum container with one surface facing the inside of the vacuum container and the other surface facing the outside of the vacuum container,
A conductor rod extending from the atmosphere side to the vacuum side through the center portion of the insulating material and serving as a part of an electric path from the high-frequency power supply to the electrode;
In order to remove a gap between the insulating material and the rod, a brazing portion for joining the rod and the rod is provided outside the vacuum vessel.
[0013]
2) By applying a high-frequency voltage from a high-frequency power source provided outside the vacuum vessel to between the electrodes provided in a vacuum vessel to which a predetermined raw material gas or a cleaning gas is supplied, A current introduction terminal of a vacuum processing apparatus that performs a predetermined process such as film formation or cleaning by forming a plasma of a source gas or a cleaning gas,
An insulating material fixed to the vacuum container with one surface facing the inside of the vacuum container and the other surface facing the outside of the vacuum container,
A conductor rod extending from the atmosphere side to the vacuum side through the center portion of the insulating material and serving as a part of an electric path from the high-frequency power supply to the electrode;
In order to remove the gap between the insulating material and the rod, a brazing portion that joins both is provided outside the vacuum vessel,
In addition, nickel plating was applied to the surface of the brazed part.
[0014]
3) By applying a high-frequency voltage from a high-frequency power source provided outside the vacuum vessel to between the electrodes provided in a vacuum vessel to which a predetermined source gas or cleaning gas is supplied, A current introduction terminal of a vacuum processing apparatus that performs a predetermined process such as film formation or cleaning by forming a plasma of a source gas or a cleaning gas,
An insulating material fixed to the vacuum container with one surface facing the inside of the vacuum container and the other surface facing the outside of the vacuum container,
A conductor rod extending from the atmosphere side to the vacuum side through the center portion of the insulating material and serving as a part of an electric path from the high-frequency power supply to the electrode;
In order to remove the gap between the insulating material and the rod, a brazing portion that joins both is provided outside the vacuum vessel,
Further, the surface of the rod including the brazed portion is plated with a metal material having a lower resistance than the material constituting the rod.
[0015]
4) In the current introduction terminal described in 3) above,
The plating shall be gold plating.
[0016]
5) By applying a high-frequency voltage from a high-frequency power source provided outside the vacuum vessel to between the electrodes provided in a vacuum vessel to which a predetermined raw material gas or a cleaning gas is supplied, A current introduction terminal of a vacuum processing apparatus that performs a predetermined process such as film formation or cleaning by forming a plasma of a source gas or a cleaning gas,
An insulating material fixed to the vacuum container with one surface facing the inside of the vacuum container and the other surface facing the outside of the vacuum container,
A conductor rod extending from the atmosphere side to the vacuum side through the center portion of the insulating material and serving as a part of an electric path from the high-frequency power supply to the electrode;
In order to remove the gap between the insulating material and the rod, a brazing portion that joins both is provided outside the vacuum vessel,
Further, a cooling jacket formed of an insulating material having a flow path for cooling the rod by distributing a cooling medium therein and disposing a cooling medium inside was provided on the outer peripheral surface of the rod outside the vacuum vessel. thing.
[0017]
6) Having any one of the current introduction terminals described in 1) to 5) above.
[0018]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. As an embodiment, only the current introduction terminal portion is extracted, and only the relevant portion will be described. Each of the current introduction terminals according to the embodiments can be applied to the portion A shown in FIG. That is, the vacuum processing apparatus to which each embodiment is applied is, for example, a plasma CVD apparatus, and furthermore, NF which is a cleaning gas. ₃ A gas is supplied into the vacuum vessel 1 to form a plasma between the electrodes 3 and 4, and the generated F radicals are deposited on the Si film deposited and deposited in the vacuum vessel 1, especially near the electrode 3 and the substrate holding plate 6. Act on SiF ₄ This is a device for performing a self-cleaning process of removing from the inside of the vacuum vessel 1 by changing to
[0019]
<First embodiment>
FIG. 1 is a sectional view showing a current introduction terminal according to the first embodiment of the present invention. As shown in the figure, the current introduction terminal is provided with brazing portions 26a and 26b at a joining portion between the insulating ceramics 21 and the feedthrough 22 which is a conductor rod and a joining portion between the insulating ceramics 21 and the sleeve 23. The brazing portions 26a and 26b are provided outside the vacuum vessel 1. Other basic configurations are the same as those of the current introduction terminal shown in FIG.
[0020]
That is, at the joint between the insulating ceramics 21 and the feedthrough 22 and at the joint between the insulating ceramics 21 and the sleeve 23, the brazing portions 26a, Although the brazing material 26b is formed, the brazing material brazing portions (usually of an Ag-Cu type) 26a and 26b in the present embodiment are formed on the side facing the outside of the vacuum vessel 1 (atmosphere side). . In the plasma CVD apparatus to which the current introduction terminal is applied, the inside of the vacuum vessel 1 is continuously evacuated by the vacuum pump 8 (see FIG. 5), and the gap between the joint between the insulating ceramic 21 and the feedthrough 22 is impure. This is because there is no gas accumulation and there is no need to attach importance to the amount of degassing from here.
[0021]
The current introduction terminal also has an insulating ceramic 21 which is a disc-shaped insulating material, and a feedthrough 22 formed of a conductive member penetrating the center of the insulating ceramic 21. Is fixed to the inner peripheral surface of a cylindrical sleeve 23 which is a conductive member by brazing via the outer peripheral surface. The sleeve 23 is fitted into a hole at the center of the flange member 14 via its outer peripheral surface, and is fixed by spot welding. Other configurations are the same as those of the current introduction terminal shown in FIG. 6, and therefore, the same portions are denoted by the same reference numerals and overlapping description will be omitted.
[0022]
In the current introduction terminal according to the present embodiment as described above, the brazed portions 26a and 26b do not come into contact with the F radical formed on the vacuum side during the cleaning of the plasma CVD apparatus, and therefore, do not evaporate. . As a result, the life of the brazed portions 26a and 26b can be extended.
[0023]
<Second embodiment>
FIG. 2 is a sectional view showing a current introduction terminal according to the second embodiment of the present invention. As shown in the figure, the current introducing terminal is obtained by further applying Ni plating 38a, 38b on the surface of brazing portions 36a, 36b similar to the brazing portions 26a, 26b of the current introducing terminal shown in FIG. It is.
[0024]
That is, the brazing portions 36a and 36b are formed at the joint between the insulating ceramics 31 and the feed-through 32 and the joining portion between the insulating ceramics 31 and the sleeve 33. In addition to being formed on the side (atmosphere side) facing the outside of the vacuum vessel 1, Ni platings 38a and 38b are further applied to the surfaces of the brazed portions 36a and 36b. In this case, the plating thickness is sufficient to function as a gas barrier with the surroundings, so that about 1 μm is sufficient. In FIG. 2, the same parts as those in FIG. 1 are denoted by the same reference numerals, and redundant description will be omitted.
[0025]
In the current introducing terminal according to the present embodiment, similarly to the current introducing terminal shown in FIG. 1, the brazed portions 36a and 36b do not come into contact with the F radicals and do not evaporate, so that the brazed portions 36a and 36b Life can be extended. Also, since the brazing portions 36a, 36b are coated with Ni plating 38a, 38b having high corrosion resistance, the brazing portions 36a, 36b are further prevented from being deteriorated by oxidation or the like under the atmospheric pressure, and the life is extended. Can be achieved. Further, the Ni plating 38a in this case also enters the gap between the insulating ceramics 31 and the feedthrough 32 and the gap between the insulating ceramics 31 and the sleeve 33. This also makes it possible to improve the corrosion resistance of the vacuum-side brazing portions 36a and 36b to F radicals.
[0026]
<Third embodiment>
FIG. 3 is a sectional view showing a current introduction terminal according to the third embodiment of the present invention. As shown in the drawing, the current introduction terminal is formed on the surface of the feedthrough 42 including the surfaces of the brazed portions 46a and 46b similar to the brazed portions 26a and 26b in the current introduction terminal shown in FIG. Au plating 48a, 48b is further applied to the peripheral surface.
[0027]
That is, the brazing portions 46a and 46b are formed at the joining portion between the insulating ceramics 41 and the feedthrough 42 and the joining portion between the insulating ceramics 41 and the sleeve 43. In addition to being formed on the side facing the outside of the vacuum vessel 1 (atmospheric side), Au plating 48a is further formed on the surface of the feedthrough 42 including the surfaces of the brazing portions 46a and 46b and the inner peripheral surface of the sleeve 43. , 48b. Au in this case is not only chemically stable, but also has a lower resistance than the normal feedthrough 42. This is because the feedthrough 42 is usually formed of an Fe—Co alloy in order to ensure good adhesion to the insulating ceramic 41 by brazing. In this manner, in the present embodiment, in principle, if plating is performed with a member having a lower resistance than the feedthrough 42, there is no need to particularly limit to the Au platings 48a and 48b. Therefore, plating of Ag, Cu, AI, or the like may be used instead of the Au plating 48a, 48b. However, these platings have lower corrosion resistance to F radicals and the like than Au. That is, the Au platings 48a and 48b are optimal from the viewpoints of conductivity and corrosion resistance. In this case, the plating thickness is desirably at least about 10 μm in order to reduce the conduction resistance by the skin effect when a high frequency (13.56 MHz to 100 MHz) is applied. In FIG. 3, the same parts as those in FIG. 1 are denoted by the same reference numerals, and duplicate description will be omitted.
[0028]
In the current introducing terminal according to the present embodiment, similarly to the current introducing terminal shown in FIG. 1, the brazing portions 46a and 46b do not come into contact with the F radicals on the vacuum side, they do not evaporate, and the atmosphere side portion. Is not oxidized, so that the life of the brazed portions 46a and 46b can be extended. Also, Au plating 48a, 48b having a lower resistance than the feedthrough 42 is applied to the surface of the feedthrough 42 including the surfaces of the brazing portions 46a, 46b and the inner peripheral surface of the sleeve 43. Can be reduced. In particular, when the frequency of the high-frequency current supplied from the high-frequency power supply 2 (see FIG. 5) increases, the current concentrates on the surface of the feedthrough 42 or the surface of the sleeve 43 due to the skin effect, so that the frequency of the supplied current increases. The lower the resistance, the more significantly the Au plating 48a, 48b can reduce the resistance. At this time, the range of the Au platings 48a and 48b is not limited to the range shown in FIG. 3, but may be arbitrarily selected. Further, the Au plating 48b is applied not only to the Au plating 48a on the feedthrough 42 part but also to the inner peripheral surface of the sleeve 43 because the cable (not shown) connected to the feedthrough 42 is usually a shield. This takes into account that a cable is used. That is, the point that the shield part of the shielded cable is connected to the sleeve 43 is taken into consideration.
[0029]
<Fourth embodiment>
FIG. 4 is a sectional view showing a current introduction terminal according to the fourth embodiment of the present invention. As shown in the drawing, the current introduction terminal is connected to a feedthrough 52 outside the vacuum vessel 1 in addition to the brazing portions 56a and 56b similar to the brazing portions 26a and 26b in the current introduction terminal shown in FIG. A cooling jacket 58 for cooling is provided.
[0030]
That is, the brazing portions 56a and 56b are formed at the joint between the insulating ceramics 51 and the feedthrough 52 and the joint between the insulating ceramics 51 and the sleeve 53, and further have a cooling jacket 58. The cooling jacket 58 is disposed outside the vacuum vessel 1 on the outer peripheral surface of the feed-through 52 with its inner peripheral surface being in close contact with the feedthrough 52, and has a flow path 58a through which a cooling medium (cooling water) flows. And an insulating material capable of preventing electrical contact. In this case, the cooling jacket 58 is formed of an insulating material having heat resistance to about 80 ° C. because the surface of the feedthrough 42 may become high at about 80 ° C. due to Joule heat during energization. For example, a polyimide material and PTFE (trade name: Teflon) are suitable. In FIG. 4, the same portions as those in FIG. 1 are denoted by the same reference numerals, and duplicate description will be omitted.
[0031]
In the current introduction terminal according to the present embodiment, similarly to the current introduction terminal shown in FIG. 1, the brazed portions 56a and 56b do not come into contact with the F radicals and do not evaporate. The life of 56b can be extended. Further, at the time of energization, a cooling medium such as cooling water can be supplied from the inlet 58b of the cooling jacket 58 to the flow path 58a and discharged through the outlet 58c, so that the feedthrough 52 is effectively cooled by the cooling medium. The temperature can be kept at 80 ° C. or lower in all the areas near the brazing of the feedthrough 52 portion. Since corrosion due to F radicals hardly occurs at 100 ° C. or lower, by cooling in this way, the corrosion resistance of the brazed portions 56a and 56b can be more reliably improved.
[0032]
Note that it is naturally possible to configure a current introduction terminal in which any two to three or more of the above embodiments are combined. By this combination, it is possible to obtain the operation and effect obtained by superimposing the operation and effect of each embodiment.
[0033]
Some vacuum processing apparatuses such as a plasma CVD apparatus have a plurality of power supply points for electrodes. This is because, by providing the feeding points at a plurality of locations, the generated plasma is made uniform. In this case, the power supply cable also corresponds to a multiconductor. For this reason, a plurality of feedthroughs may be required in correspondence with the number of conductors in this case. In this case, the necessary number of feedthroughs 22 and the like are intensively penetrated and fixed to the insulating ceramics 21 and the like, and the configuration is the same as that of each embodiment. Can be formed. In this case, it is possible to reduce the occupied area and to obtain a reasonable structure of the vacuum processing apparatus, as compared with the case where the feedthroughs 22 and the like are distributed.
[0034]
Further, the current introduction terminal according to each of the above-described embodiments is not limited to a plasma CVD apparatus, but can be generally applied to a vacuum processing apparatus that performs a predetermined process by generating plasma. For example, the present invention can be similarly applied to a dry etching apparatus and a sputtering apparatus.
[0035]
【The invention's effect】
As described in detail with the above embodiments, the invention described in [Claim 1] supplies a predetermined source gas for forming a thin film on a substrate or removes a film adhered in a vacuum vessel. By applying a high-frequency voltage from a high-frequency power source provided outside the vacuum vessel to between the electrodes provided in a vacuum vessel to which a cleaning gas for supplying the cleaning gas is supplied, the source gas or cleaning is performed between the electrodes. A current introduction terminal of a vacuum processing apparatus for performing a predetermined process such as film formation or cleaning by forming a plasma of a gas, wherein one surface faces the inside of the vacuum container and the other surface faces the outside of the vacuum container. An insulating material fixed to the vacuum vessel and a conductor rod that penetrates the center of the insulating material, extends from the atmosphere side to the vacuum side, and becomes a part of an electric path from the high-frequency power supply to the electrode. Yes Rutotomoni, the brazing portion joining both to eliminate the gap between the insulating member and the rod, since there is provided outside the vacuum vessel,
The brazed portion does not come into contact with radicals generated by plasma generated in the vacuum processing apparatus, and therefore does not evaporate.
As a result, according to the present invention, it is possible to extend the life of the brazed portion.
[0036]
[Claim 2] The invention according to claim 2, wherein a high-frequency voltage is supplied from a high-frequency power source provided outside the vacuum vessel between electrodes provided in a vacuum vessel to which a predetermined raw material gas or a cleaning gas is supplied. By applying a voltage, a current introduction terminal of a vacuum processing apparatus for forming a plasma of a source gas or a cleaning gas between the electrodes and performing a predetermined process such as film formation or cleaning, and one surface of which is inside the vacuum vessel And the other surface faces the outside of the vacuum vessel and is fixed to the vacuum vessel, and the insulating material penetrates a central portion of the insulating material to reach the vacuum side from the atmosphere side. A conductor rod which is a part of an electric path leading to the conductor, and a brazing part for joining the insulating material and the rod to remove the gap between the rod and the rod is provided outside the vacuum vessel. of Since a nickel-plated on the surface,
In addition to the functions and effects of the invention described in [Claim 1], it is possible to further extend the life of the brazed portion by nickel plating having high corrosion resistance on the brazed portion. Further, since the nickel plating in this case also enters the gap between the insulating material and the rod, the corrosion resistance of the brazed portion can be improved also by this.
[0037]
The invention described in [Claim 3] is characterized in that a high frequency voltage is supplied from a high frequency power supply provided outside the vacuum vessel between electrodes provided in a vacuum vessel to which a predetermined raw material gas or cleaning gas is supplied. By applying a voltage, a current introduction terminal of a vacuum processing apparatus for forming a plasma of a source gas or a cleaning gas between the electrodes and performing a predetermined process such as film formation or cleaning, and one surface of which is inside the vacuum vessel And the other surface faces the outside of the vacuum vessel and is fixed to the vacuum vessel, and the insulating material penetrates a central portion of the insulating material to reach the vacuum side from the atmosphere side. A conductor rod which is a part of an electric path leading to the conductor, and a brazing part for joining the insulating material and the rod to remove the gap between the rod and the rod is provided outside the vacuum vessel. To The surface free the rod, since plated with low-resistance metal material than the material constituting the rod,
In addition to the functions and effects of the invention described in [Claim 1], the surface of the rod including the surface of the brazed portion is plated with a metal material having a lower resistance than the rod, thereby reducing the resistance of this portion. I can do it. In particular, good energization can be performed by removing the influence of the skin effect when the frequency of the high-frequency current supplied from the high-frequency power supply increases.
[0038]
In the invention described in [Claim 4], the plating is gold plating in the current introducing terminal described in [Claim 3].
In the invention described in [Claim 3], it is possible to secure the low resistance of the rod and to make the rod the most excellent in chemical stability. That is, the effects of the invention described in [Claim 3] can be most remarkably exhibited.
[0039]
The invention described in [Claim 5] is characterized in that a high-frequency voltage is supplied from a high-frequency power source provided outside the vacuum vessel between electrodes provided in a vacuum vessel to which a predetermined raw material gas or a cleaning gas is supplied. By applying a voltage, a current introduction terminal of a vacuum processing apparatus for forming a plasma of a source gas or a cleaning gas between the electrodes and performing a predetermined process such as film formation or cleaning, and one surface of which is inside the vacuum vessel And the other surface faces the outside of the vacuum vessel and is fixed to the vacuum vessel, and the insulating material penetrates a central portion of the insulating material to reach the vacuum side from the atmosphere side. A conductor rod which is a part of an electric circuit leading to the conductor, and a brazing portion for joining the insulating material and the rod to remove the gap between the rod and the conductor is provided outside the vacuum vessel. The outer peripheral surface of the rod section, since the cooling jacket formed of an insulating material having a flow path for cooling the rod by circulating the cooling medium in the interior as well as arranged in close contact with the inner peripheral surface provided,
In addition to the functions and effects of the invention described in claim 1, a cooling medium such as cooling water can be supplied to the flow path from the inlet of the cooling jacket at the time of energization, and can be discharged through the outlet. Thus, the rod can be cooled effectively, and the rod portion can be kept at a predetermined low temperature. As a result, in the low temperature range, the corrosion resistance of the brazed portion can be more reliably improved by utilizing the fact that corrosion due to radicals hardly occurs.
[0040]
Since the invention described in [Claim 6] has any one of the current introduction terminals described in [Claim 1] to [Claim 5],
The operation of the vacuum processing apparatus without electrical trouble is continued for a long period of time by extending the life of the portion based on the operation and effect of the current introduction terminal described in [Claim 1] to [Claim 5]. be able to.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view illustrating a current introduction terminal according to a first embodiment of the present invention.
FIG. 2 is a sectional view showing a current introduction terminal according to a second embodiment of the present invention.
FIG. 3 is a sectional view showing a current introduction terminal according to a third embodiment of the present invention.
FIG. 4 is a sectional view showing a current introduction terminal according to a fourth embodiment of the present invention.
FIG. 5 is an explanatory view conceptually showing a plasma CVD apparatus according to a conventional technique.
FIG. 6 is a cross-sectional view illustrating a current introduction terminal having a conventional structure, which is a portion A in FIG.
[Explanation of symbols]
1 vacuum container
2 High frequency power supply
3, 4 electrodes
22, 32, 42, 52 Feedthrough
23, 33, 43, 53 Sleeve
26a, 36a, 46a, 56a Brazing part
26b, 36b, 46b, 56b Brazing part
38a, 38b Ni plating
48a, 48b Au plating

Claims (6)

A predetermined source gas is supplied to form a thin film on the substrate, or the vacuum is applied between electrodes provided in a vacuum container to which a cleaning gas for removing a film attached to the vacuum container is supplied. By applying a high-frequency voltage from a high-frequency power supply provided outside the container, a plasma of a source gas or a cleaning gas is formed between the electrodes to perform a predetermined process such as film formation or cleaning. An introduction terminal,
An insulating material fixed to the vacuum container with one surface facing the inside of the vacuum container and the other surface facing the outside of the vacuum container,
A conductor rod extending from the atmosphere side to the vacuum side through the center portion of the insulating material and serving as a part of an electric path from the high-frequency power supply to the electrode;
A current introduction terminal, wherein a brazing portion for joining the insulating material and the rod to remove a gap therebetween is provided outside the vacuum vessel. By applying a high-frequency voltage from a high-frequency power source provided outside the vacuum vessel between electrodes provided in a vacuum vessel to which a predetermined raw material gas or a cleaning gas is supplied, the source gas is supplied between the electrodes. Or a current introduction terminal of a vacuum processing apparatus that performs predetermined processing such as film formation or cleaning by forming plasma of a cleaning gas,
An insulating material fixed to the vacuum container with one surface facing the inside of the vacuum container and the other surface facing the outside of the vacuum container,
A conductor rod extending from the atmosphere side to the vacuum side through the center portion of the insulating material and serving as a part of an electric path from the high-frequency power supply to the electrode;
In order to remove the gap between the insulating material and the rod, a brazing portion that joins both is provided outside the vacuum vessel,
A current introduction terminal characterized in that the surface of the brazed portion is plated with nickel. By applying a high-frequency voltage from a high-frequency power source provided outside the vacuum vessel between electrodes provided in a vacuum vessel to which a predetermined raw material gas or a cleaning gas is supplied, the source gas is supplied between the electrodes. Or a current introduction terminal of a vacuum processing apparatus that performs predetermined processing such as film formation or cleaning by forming plasma of a cleaning gas,
An insulating material fixed to the vacuum container with one surface facing the inside of the vacuum container and the other surface facing the outside of the vacuum container,
A conductor rod extending from the atmosphere side to the vacuum side through the center portion of the insulating material and serving as a part of an electric path from the high-frequency power supply to the electrode;
In order to remove the gap between the insulating material and the rod, a brazing portion that joins both is provided outside the vacuum vessel,
A current introduction terminal, wherein a surface of the rod including a brazed portion is plated with a metal material having a lower resistance than a material constituting the rod. In the current introducing terminal according to claim 3,
A current introduction terminal characterized in that plating is gold plating. By applying a high-frequency voltage from a high-frequency power source provided outside the vacuum vessel between electrodes provided in a vacuum vessel to which a predetermined raw material gas or a cleaning gas is supplied, the source gas is supplied between the electrodes. Or a current introduction terminal of a vacuum processing apparatus that performs predetermined processing such as film formation or cleaning by forming plasma of a cleaning gas,
An insulating material fixed to the vacuum container with one surface facing the inside of the vacuum container and the other surface facing the outside of the vacuum container,
A conductor rod extending from the atmosphere side to the vacuum side through the center portion of the insulating material and serving as a part of an electric path from the high-frequency power supply to the electrode;
In order to remove the gap between the insulating material and the rod, a brazing portion that joins both is provided outside the vacuum vessel,
Further, a cooling jacket formed of an insulating material having a flow path for cooling the rod by distributing a cooling medium therein and disposing a cooling medium inside was provided on the outer peripheral surface of the rod outside the vacuum vessel. A current introduction terminal, characterized in that: [Claim 1] A vacuum processing apparatus having any one of the current introduction terminals according to any one of [1] to [5].

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