JP3580916B2 - Substrate heating device - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an apparatus for degassing a substrate, and more particularly, to a substrate heating apparatus for evacuating and degassing a plurality of substrates while heating the substrates.
[0002]
[Prior art]
2. Description of the Related Art As a film forming apparatus used for production of a semiconductor device, a liquid crystal device, or the like, an apparatus capable of performing a film forming process without exposing a film forming chamber to the atmosphere has been widely used in place of a batch type film forming apparatus.
[0003]
Such a film forming apparatus includes a continuous type and a single wafer type. First, a general configuration of a continuous in-line film forming apparatus will be described. Referring to FIG. 8, FIG. 8 is a plan view of a conventional continuous in-line film forming apparatus 100. The film forming apparatus 100 includes a loading chamber 102, a degassing chamber 106, an isolation chamber 108, , A film forming chamber 110 and an unloading chamber 113 are arranged in this order. Each of the chambers is partitioned by partition valves 105, 107, 109, and 112, which are closed in a normal state, and configured to be individually evacuated.
[0004]
A partition valve 103 is provided between the loading chamber 102 and the atmosphere. The partition valve 103 is opened, and the substrate 101 mounted on the carrier is loaded into the loading chamber 102, and the partition valve 103 is opened. After closing and evacuating 103, the gate valve 105 is opened and the substrate 101 is moved to the degas chamber 106.
[0005]
As shown in FIG. 9, the degassing chamber 106 is provided with a frame-shaped stocker truck 114 having a rack 116 provided reciprocally on a pinion 117. A plurality of holding plates 115 are arranged in parallel with a predetermined interval therebetween, and are configured so as to be able to hold one substrate one by one between the holding plates 115.
[0006]
In the case where there is a place where the substrate is held and a place where the substrate is empty between the holding plates 115, when the substrate 101 is loaded, the pinion 117 is rotated, and the stocker truck 114 is moved and the loaded substrate is loaded. 101 is placed in an empty space between the holding plates 115.
[0007]
The degassing chamber 106 is configured to be evacuated by a vacuum pump (not shown) connected to an exhaust port 119. After the substrate 101 is loaded into the degassing chamber 106, the partition valve 105 is closed. In this case, even when the atmosphere is introduced into the carry-in chamber 102 to carry a new substrate into the film forming apparatus 100, the atmosphere is prevented from entering the degassing chamber 106. While the vacuum state in the degassing chamber 106 is maintained, the operation of loading the substrate into the degassing chamber 106 is repeated until the frame-shaped stocker truck 114 is fully loaded.
[0008]
Then, among the substrates held between the holding plates 115, the substrates for which a predetermined degassing time has elapsed are transported one by one to the rear isolation chamber 108 by the transport mechanism 118, and thereby opened. A new substrate loaded from the loading chamber 102 is stored in the space.
[0009]
On the other hand, when the substrate is loaded into the isolation chamber 108, the partition valve 107 is closed, and after the isolation chamber 108 is sufficiently evacuated, the partition valve 109 is opened, and the inside of the isolation chamber 108 is opened. The substrate is moved into the film forming chamber 110.
[0010]
A sputtering cathode 111 is provided in the film forming chamber 110, and a target is sputtered while the substrate 101 carried into the film forming chamber 110 is slowly moving between the sputtering cathodes 111, and a thin film is formed. Is formed. When a thin film having a desired thickness is formed on the surface of the substrate 101, the gate valve 112 is opened, and the substrate 101 is transferred from the film forming chamber 110 to the unloading chamber 113, and the gate valve 112 is closed. After that, the air is introduced into the carry-out chamber 113 and taken out.
[0011]
As described above, according to the film forming apparatus 100, the degassing process of the substrate and the film forming operation can be continuously performed, and the productivity is good, so that the film forming apparatus 100 has been widely used in actual production sites.
[0012]
However, in recent years, it has been required to improve the film quality of a thin film to be formed, and degassing has become insufficient simply by placing the substrate in a vacuum state. Further, if it is attempted to degas simply by placing it in a vacuum atmosphere, the time required for the treatment becomes longer, which has been a problem.
[0013]
In this case, if evacuation is performed while heating the substrate, the degassing time is shortened, and a thin film having good crystallinity can be formed, but the substrate is held upright and heated by an infrared lamp or the like. Then, the substrate is likely to be warped or distorted, and this has been a problem particularly for large-area substrates.
[0014]
By the way, in the continuous type in-line film forming apparatus described above, there is a problem that dust is generated from the transport mechanism, and it is difficult to form various types of thin films. A single-wafer type film forming apparatus having a plurality of film forming chambers and performing a film forming process for one substrate at a time in each film forming chamber has become mainstream.
[0015]
In such a single-wafer type film forming apparatus, a substrate transfer robot is employed as a transfer mechanism in order to transfer a substrate between a plurality of film formation chambers and a loading / unloading chamber or a substrate heating chamber. It is considered to be advantageous when applied to a large-area substrate because a thin film can be formed on the substrate surface without rubbing and no dust is generated from the transport mechanism without defects.
[0016]
FIG. 10 shows a cross-sectional view of a part of such a single wafer type film forming apparatus.
Referring to FIG. 10, reference numeral 200 denotes a film forming apparatus having a conventional substrate heating apparatus, which includes an L / UL chamber 202 for carrying in / out a substrate, a transfer chamber 208 provided with a substrate transfer robot 207, and a heater. A heating / degassing chamber 206 having a substrate heating device composed of 210 ₁ and 210 ₂ is arranged in this order, and is partitioned by partition valves 205 and 209 which are normally closed, and individually evacuated. It is configured to be able to.
[0017]
The L / UL chamber 202 has a door 203 and a cassette elevating mechanism 214. When the door 203 is opened, a cassette 220 full of substrates to be formed can be mounted.
When the door 203 is closed after the cassette 220 is mounted, a vacuum pump (not shown) is activated, and the loading chamber 202 is evacuated. When a predetermined evacuation time has elapsed, the partition valve 205 is opened, and the substrates are taken out of the cassette 220 one by one by the substrate transfer robot 207.
[0018]
Next, the partition valve 209 is opened, carried into the heating / degassing chamber 206 by the substrate transfer robot 207, and provided to be vertically movable in the heating / degassing chamber 206 by the elevating mechanism 211. The substrate 212 is placed on the holding rod 204.
[0019]
The substrate 212 is positioned between the heaters 210 ₁ and 210 _{2. After} the gate valve 209 is closed, the heaters 210 ₁ and 210 ₂ are energized, and at the same time, a vacuum pump (not shown) is started. Then, a degassing process is performed on the substrate 212 by heating and evacuation.
[0020]
When a predetermined degassing time has elapsed and the degassing process has been completed, the partition valve 206 is opened, and the substrate 212 is taken out of the heating / degassing chamber 206 by the substrate transfer robot 207, and a film formation (not shown) is performed. The film is transferred to the room and the film forming operation is started.
[0021]
At this time, the partition valve 205 is opened to take out a new substrate from the cassette 220, and the new substrate is placed on the holding rod 204 by the substrate transfer robot 207, and the heating and degassing of the new substrate is started.
[0022]
As described above, in the heating / degassing apparatus of the related art corresponding to the substrate transfer robot, only one substrate can be processed at a time, and the processing capability is low.
In addition, when the substrate is placed on the holding rod and heated by the heater, the substrate may be warped or distorted. Therefore, the development of a substrate heating apparatus corresponding to a large area substrate has been desired.
[0023]
[Problems to be solved by the invention]
SUMMARY OF THE INVENTION The present invention has been made to solve the above-described disadvantages of the related art, and an object of the present invention is to provide a substrate heating apparatus that can efficiently heat a substrate and has a small installation area corresponding to a substrate transfer robot. It is in.
[0024]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, the invention according to claim 1 is a substrate heating apparatus that heats a substrate by placing the substrate on a flat plate heater, wherein the flat plate heater has a plurality of the flat plate heaters, and the flat plate heaters are stacked at intervals. Characterized by being arranged so that each of the flat plate heaters can move up and down,
[0025]
According to a second aspect of the present invention, there is provided the substrate heating apparatus according to the first aspect, wherein the substrate is transferred between the handle and each of the plate heaters in the substrate transfer robot that horizontally moves the substrate placed on the handle. In the substrate heating apparatus configured, a plurality of rotating shafts are vertically arranged around each of the flat plate heaters, and each of the rotating shafts is configured to be able to move up and down and rotate around a central axis. A hook for hooking the substrate is provided at a lower end of the flat plate heater, each of the flat plate heaters has a cutout portion that can insert and rotate each of the hooks. It is characterized in that the substrate can be transferred between the handle and each of the flat plate heaters by rotation.
[0026]
According to the configuration of such a substrate heating apparatus, since the substrate is placed on the flat plate heater and heated, even when heating a large substrate, no warpage or distortion occurs, and a plurality of flat plate heaters are used. Since the arrangement area was small because of being spaced apart from each other and the configuration was such that each flat plate heater could be moved up and down, when the substrate was transferred into the substrate heating device by the substrate transfer robot, It is possible to store the substrate in the device.
[0027]
Also, a plurality of rotating shafts are vertically arranged around each flat plate heater, a hook is provided at a lower end of each rotating shaft, and each rotating shaft is configured to be able to move up and down and rotate around a central axis. When a notch is provided in each of the flat plate heaters so that each of the hooks can be inserted and each of the hooks can be rotated, the substrate heating device and a substrate transfer for transferring the substrate by horizontally moving a handle on which the substrate is placed are provided. When loading and unloading a substrate with a robot, the vertical movement of each flat plate heater and each rotary shaft, and the rotation of each hook, between the handle and each hook, and each hook and It is convenient that the substrate can be transferred between the flat plate heaters.
[0028]
BEST MODE FOR CARRYING OUT THE INVENTION
An embodiment of the present invention will be described with reference to the drawings.
Referring to FIG. 1, 2 is a substrate heating apparatus according to the preferred embodiment of the present invention, comprises four flat heater 3 ₁ to 3 ₄ to the heating chamber 4.
Each of the flat plate heater ₃ 1 to 3 ₄ has a rectangular shape, is disposed to overlap with a predetermined interval, the four corners of the flat plate heater ₃ 1 to 3 ₄ are fixed rods ₅ 1 to 5 ₄ (fixing bar ₃ Are not shown).
[0029]
Wherein the lower end and the upper portion of each retainer bar 5 ₁ to 5 _4, the mounting plate 6 _and 62 are provided respectively, the guide rod 7 is vertically erected at the center of the mounting plate 6 ₂ surface is, the in the vicinity of the mounting plate ₆₁ the back surface of the four corners, the upper end portion of the extending vertically downward to the outside of the heating chamber 4 bellows 8 _1-8 4 _(bellows 8 ₃ is not shown) is fixed in an airtight I have.
[0030]
Wherein the lower end of the bellows 8 _{1-8 4} bellows mounting plate 29 is attached to the bellows mounting plate 29 and a ball screw (not shown) is attached, by the bellows mounting plate 29, the rotational motion of the ball screw Into a linear motion.
[0031]
The ball screw is mounted on a rotating shaft of a motor 10 arranged on the lower surface of the bellows mounting plate 29. When the motor 10 is started and the ball screw is rotated, the bellows 8 is rotated by the mounting plate 29. _{1-8 4} is vertically moved, whereby the respective flat plate heater 3 ₁ to 3 ₄ are configured to be raised and lowered.
[0032]
The bellows guide rods ₁₁ 1 to 11 ₄ in the mounting plate 29 (the guide bars ₁₁ 1, 11 ₃ are not shown) are inserted through the airtight, also disposed above the mounting plate _{6 2,} the heating since the top plate 13 which is fixed to the chamber 4 the guide rod 7 is inserted hermetically the motion during lifting of the flat plate heater 3 ₁ to 3 ₄ is restricted, their movement is smooth It has been like that.
[0033]
Near the edges of two sides parallel to each other on the surface of the top plate 13, rectangular fixed plates 20a and 20b are arranged along the edges, and the fixed plates 20a and 20b are respectively supported by support rods 28 _1. , 28 ₂ (support rod 28 ₁ is not shown) and, in parallel to the top plate 13 by the supporting rod ₂₈ 3, 28 ₄ are fixed at intervals.
[0034]
Screws 21a and 21b are inserted into the fixing plates 20a and 20b so as to extend vertically downward, and portions other than the screw portions are rotatably held. The fixing plates 20a and 21b of the screws 21a and 21b are fixed. Pulleys 22a and 22b are provided on the upper end portion of the surface of 20b.
[0035]
Wherein between the fixed plate 20a, 20b and the top plate 13, the mounting plate 19a, which is 19b is disposed, the mounting plate 19a, the 19b, the supporting rod ₂₈ 1, 28 _2, the support a rod ₂₈ 3, 28 ₄ are respectively inserted. The screws 21a and 21b are mounted on the mounting plates 19a and 19b, and the mounting portions are formed into ball screws, and are configured to move smoothly.
[0036]
The motor 9 is disposed on the top plate 13, and a belt 26 is wound between the rotation shaft 27 and the pulleys 22a and 22b. When the motor 9 is activated, the screws 21a and 21b are turned on. Is rotated, and the mounting plates 19a and 19b are moved up and down.
[0037]
The mounting plates 19a, 19b are formed longer than the fixed plates 20a, 20b, and the portions protruding from both ends of the fixed plates 20a, 20b are respectively provided with rotary actuators 17 ₁ , 17 ₂ (rotary actuators 17 ₁ and not shown), is provided with a rotary actuator ₁₇ 3, 17 _4.
[0038]
Of the periphery of each of the flat plate heater ₃ 1 to 3 _4, in the vicinity of the two sides to be mutually parallel in each flat heater ₃ 1 to 3 _4, two of the four rotary shafts ₁₈ 1-18 ₄ each is arranged vertically, the rotary shafts 18 _{1-18 4} is inserted hermetically in said top plate 13, the upper end is attached to the rotating shaft of the rotary actuator 17 _{1-17 4.}
[0039]
Further, wherein the lower end portions of the rotary shafts ₁₈ 1-18 _4, the hooks _161-164 (hook ₁₆ 3, 16 ₄ are not shown) are respectively attached, each rotary actuator ₁₇ 1-17 the _fourth operation, the each hook _161-164 is to be rotated by 90 degrees about the central axis of the rotary shaft ₁₈ 1-18 _4. Further, said mounting plate 19a and the motor 9 is operated, 19b is vertically moved, the hooks _161-164, the is configured to be vertically moved together with the rotary shaft ₁₈ 1-18 _4.
[0040]
Wherein when any one of the flat plate heater of the flat plate heater 3 ₁ to 3 ₄ 2, the flat plate heater 3 and the upper heating plate 23a, folded flat, the sheath heater for heating by current 25, substantially the heating plate 23b of the lower side is formed on the veneered sandwich in this order, on the edge of the heating plate 23b is centered on the central axis of the rotary shaft 18 _{1-18 4} cut portion ₂₄ 1-24 ₄ is formed by one quarter circle. Thus, each of the hooks _161-164 of the height of each cut portion ₂₄ 1-24 ₄ level with the same west, the rotary shaft ₁₈ 1-18 ₄ of the the rotating each hook _161-164 of out can be, also, each of the hooks _161-164 are formed thinner than the thickness of the cut portion ₂₄ 1-24 _4, wherein each hook _161-164 each of said cut portion ₂₄ 1-24 when taking into ₄ wherein the surface of the hook _161-164 than the heating plate 23b surface is to be reduced.
[0041]
The substrate heating apparatus 2 is used in the film forming apparatus 42 of the single-wafer shown in FIG. 7, the substrate heating apparatus 2, the film forming apparatus for performing loading and unloading of the glass substrate to 42 L / UL chamber 44 ₁ , and 44 _2, the sputtering chamber ₄₃ 1-43 ₃ for forming a film of ITO film, is disposed around the transfer chamber 45 to the substrate transport robot 31 is placed. An openable / closable partition plate is provided between each chamber and the substrate transfer chamber 45, and is configured so that each can be independently evacuated by a vacuum pump (not shown).
[0042]
The substrate to be processed in the film forming apparatus 42 is a glass substrate of 550 × 650 mm ² and a large, open the partition plate provided between the L / UL chamber ₄₄ 1, 44 ₂ and the atmosphere, such When a large, unprocessed glass substrate is placed in one L / UL chamber, the glass substrate on which film formation has been completed can be taken out of the same L / UL chamber, and each of the L / UL chambers 44 ₁ , 44 ₂ untreated glass substrate was placed in the first rests on the handle 32 of the substrate transport robot 31 by the operation of the substrate transport robot 31.
[0043]
Although the handle 32 glass substrate 14 ₂ which is placed on is to be moved by expansion and contraction of the arm portion 33 of the substrate transfer robot 31, the said substrate transport robot 31 does not perform vertical movement, horizontal movement which is configured to perform only the said substrate conveying chamber 45 partition plate is opened between the substrate heating apparatus 2, the said substrate heating chamber wherein the glass substrate 14 ₂ which is carried into the 2 when transferring to any one of the flat plate heater ₃ 1 to 3 _4, the operation of the hook ₁₈ 1-18 ₄ is required.
[0044]
The operation will be described with reference to the drawings. In FIG. 3 showing the exchange preparation state, members necessary for the description of the operation are denoted by reference numerals, while FIGS. 4 (a) to 4 (f) and FIGS. Symbols are omitted in (g) to (l).
[0045]
First, referring to FIG. 3, wherein the said one of the flat plate heater 3 ₁ to 3 _4, and the glass substrate 14 ₁ is placed on the flat plate heater 3 ₁ positioned in the lowermost layer, flat heater positioned thereon 3 to ₂ and those not placed a glass substrate. Further, each of the hooks _161-164 is to be positioned above the said flat plate heater 3 _2, its orientation is assumed to be parallel to the edge in the vicinity of the flat plate heater 3 ₂ .
[0046]
Figure 4 Referring to (a) ~ (f), when each of the hooks _161-164 wherein each rotary actuator ₁₇ 1-17 ₃ operates from ready replacement shown in FIG. 3 is directed inward ( Fukkuin operation: FIG. 4 (a)), wherein the arm 33 of the substrate transport robot 31 is extended, the flat heater _{3 2} up through between the handle 32 of the rotary shaft 18 ₂ and the rotary shaft 18 ₃ (Handle-in operation: FIG. 4B).
[0047]
In this case, the being to be located between each hook _161-164 and the glass substrate 14 ₂ which is placed on the handle 32 and the flat plate heater 3 _2, also the handle 32 is the because it is formed narrower than the glass substrate 14 _2, wherein when the motor 9 is the rotary shafts 18 _{1-18 4} is started is lifted, said protruding from the glass substrate 14 ₂ of the handle 32 portion hooked to the each hook _161-164, the glass substrate 14 ₂ is lifted over the handle 32 (the hook-up operation: FIG. 4 (c)).
[0048]
If then the arm 31 is folded, the handle 32 is withdrawn from said substrate heating unit 2 (handle-out operation: FIG. 4 (d)), then the motor 10 is activated, the respective flat plate heater 3 ₁ - 3 ₄ the hook _161-164 and is raised enters slit portion provided on a surface of the flat plate heater 32, the high of the flat plate heater _{3 2} surface than the height of each hook _161-164 It is is the the glass substrate 14 ₂ placed on the at that higher each hook _161-164 are transferred on the flat plate heater _{3 2} (heater up operation: FIG. 4 (e)).
[0049]
Rotating the rotary shaft ₁₈ 1-18 ₄ from this state, when extracting the respective hook _161-164 from the respective notch (hook-out operation: FIG. 4 (f)), to the substrate heating apparatus 2 A series of substrate loading operations ends. Then, the substrate heating apparatus 2 closes the partition valve between the substrate transfer chamber 45, it is evacuated by the flat plate heater 3 ₂ by a vacuum pump (not shown) while heating said glass substrate 14 _2, the glass substrate 14 degassing process ₂ is performed.
[0050]
Referring next to the substrate carry-out operation from the substrate heating apparatus 2, the glass substrate 14 ₁ which is placed on the flat plate heater 3 ₁ the lowermost is heated sufficiently (two minutes heating shows an example) It is assumed that the degassing process has been completed.
[0051]
First, from the state in FIG. 4 (f), the motor 10 is activated, the glass substrate 14 ₁ bottom, wherein the flat plate heater _{3 1} to be slightly higher than the surface of each hook _161-164 to 3 ₄ is lifted (heating-up operation: FIG. 5 (g)).
[0052]
Then, the the operation of the rotary actuator ₁₇ 1-17 _4, wherein each hook _161-164 is inserted into slit portion provided in said flat plate heater _{3 1} (Fukkuin Operation: FIG. 5 (h)), followed by wherein the respective flat plate heaters ₃ 1 to 3 ₄ are lowered, the glass substrate _{3 1} is hooked to the each hook _161-164 (heater down operation: FIG. 5 (i)).
[0053]
The flat heater 3 ₁ is sufficiently lowered, where a gap is vacant between the glass substrate 14 ₁ and the flat plate heater 3 _1, the handle 32 in the gap is inserted (the handle in operation: FIG. 5 ( j)).
[0054]
The glass substrate 14 _1, which is hooked on the hook _161-164 from that state and lowering each hook _161-164 is transferred to the handle 32 (the hook down operation: FIG. 5 (k)) . Then, when contracted the arms 33, the glass substrate 14 ₁ is transported to the outside of the substrate heating apparatus 2 (handle-out operation: FIG. 5 (l)), the out of the sputtering chamber ₄₃ 1-43 _3, vacant The ITO film is carried into a sputtering chamber where the film is formed, and an ITO film is formed (in one example, when forming an ITO thin film having a thickness of 1000 °, the film formation time is 3 minutes).
[0055]
Finally, by extracting the respective hook _161-164 from the flat plate heater 3 ₁ of the cut part (hook-out operation: Figure 6), another set of the substrate carry-out state out in a state that allows the entry of the glass substrate finish.
[0056]
Since the substrate is heated by placing it on the flat plate heater as described above, the degassing time is short, and no warping or distortion occurs even when a large-area substrate is heated to a high temperature.
[0057]
Further, as a result of performing a series of processes as described above, the substrate can be processed continuously, so that the time required for one substrate required for the film forming process is reduced.
[0058]
Further, even when the film formation time per one substrate is short, the degassing treatment by heating does not stop in time, and the film formation apparatus can be operated efficiently without putting an expensive film formation chamber in a state of waiting for the substrate. it can.
[0059]
Furthermore, since the substrate can be transferred without rubbing the substrate corresponding to the substrate transfer robot, no dust is generated.
[0060]
In the heating device 2, four flat plate heaters are provided, but two or more flat heaters may be provided, and various flat plate heaters can be provided depending on the heating time and the film forming time. The heating apparatus of the present invention can be applied not only to a film forming apparatus for forming a thin film by a sputtering method but also to a film forming apparatus for forming a thin film by a method other than the sputtering method, such as a CVD method.
[0061]
【The invention's effect】
The processing time per substrate can be shortened, and the installation area can be reduced.
Further, even if the substrate is heated, no warping or distortion occurs on the substrate, and no dust is generated.
[Brief description of the drawings]
FIG. 1 is a preferred embodiment of a substrate heating apparatus according to the present invention; FIG. 2 is a plan view and a side view of a flat plate heater used in the embodiment; FIG. FIGS. 4A to 4F are diagrams for explaining the substrate loading operation of the substrate heating apparatus of the present invention. FIGS. 5G to 5L are diagrams of the substrate heating apparatus of the present invention. FIG. 6 is a view for explaining a substrate unloading operation. FIG. 6 is a view showing a state of returning to a preparation state after unloading a substrate. FIG. FIG. 9 is a plan view of an example of a conventional film forming apparatus. FIG. 9 is a view for explaining the operation of a degassing apparatus provided in the film forming apparatus. FIG. Cross-sectional view [Explanation of reference numerals]
2 ...... substrate heater 3 ₁ to 3 ₄ ...... flat heater ₁₄ 1, 14 ₂ ...... substrate _161-164 ...... hook 18 _{1-18 4} ...... rotary shaft ₂₄ 1-24 ₄ ...... cut portion 31 …… Substrate transfer robot 32 …… Handle

Claims (2)

A substrate heating device for heating a substrate placed on a flat plate heater,
Having a plurality of the flat plate heaters, each flat plate heater is arranged to be spaced apart and overlapped,
A substrate heating device, wherein each of the flat plate heaters is configured to be able to move up and down. A substrate heating device configured to transfer a substrate between the handle and each of the flat plate heaters, wherein the substrate transport robot horizontally moves a substrate placed on a handle,
A plurality of rotation axes are vertically arranged around each of the flat plate heaters,
Each of the rotating shafts is configured to be capable of vertical movement and rotational movement about a central axis,
At the lower end of each of the rotating shafts are provided hooks for hooking the substrate,
Each of the flat plate heaters has a cutout for inserting and rotating each of the hooks, and the vertical movement of each of the flat plate heaters and each of the rotation shafts, and the rotation of each of the hooks allow the handle and each of the flat plate heaters to rotate. 2. The substrate heating apparatus according to claim 1, wherein the substrate can be transferred between the substrates.

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