JP3674282B2 - Plasma generating apparatus, chamber inner wall protecting member and manufacturing method thereof, chamber inner wall protecting method and plasma processing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a plasma generating apparatus such as a plasma plasma etching apparatus used in a semiconductor manufacturing apparatus, a chamber inner wall protecting member used therefor, a manufacturing method thereof, a chamber inner wall protecting method, and a plasma processing method.
[0002]
[Prior art]
In the manufacture of semiconductor devices, there are a number of important steps that utilize plasma processing such as etching and CVD. In the plasma generating apparatus of these steps, the apparatus members around the semiconductor wafer in the plasma generating apparatus come into contact with the plasma and wear out. This consumption causes phenomena such as (1) generation of minute foreign matter from the member and dropping it onto the surface of the semiconductor wafer, and (2) contamination of the semiconductor wafer by mixing constituent materials into the plasma, resulting in a decrease in device characteristics and yield. cause. For this reason, the members of the apparatus are required to have high purity and properties that are not easily consumed by plasma.
[0003]
In recent years, glassy carbon has attracted attention as a material that satisfies the above properties. Glassy carbon is a carbon material obtained by carbonizing and baking a thermosetting resin, and has a glassy very homogeneous and dense structure. In addition to the properties of general carbon materials such as conductivity, chemical stability, heat resistance, and high purity, this material has an excellent feature that constituent particles do not fall off. For this reason, glassy carbon is applied to an upper electrode of an etching apparatus as a semiconductor manufacturing apparatus member.
In the plasma generator, the plasma is in contact with not only the electrodes but also the inner wall of a container (hereinafter referred to as a chamber) that generates plasma, and the above-mentioned problems occur. For this reason, usually, an aluminum-based material whose inner surface is anodized (alumite treatment) is used as a material for the chamber.
[0004]
In the plasma generator, the vapor deposition of the organic polymer film proceeds simultaneously with the exhaustion of the chamber. This is usually called a deposition film and is easily deposited on a portion where the plasma density is low. When this deposition film becomes thicker than a certain level, the film is peeled off, mixed into the plasma and dropped onto the semiconductor wafer as a discharge foreign matter, causing a decrease in yield. For this reason, it is necessary to periodically clean the inner wall of the container to remove the deposit film.
In order to facilitate the cleaning of the deposition film, Japanese Patent Application Laid-Open No. 9-186137 proposes to provide a thin film on the inner wall of the chamber of the plasma etching apparatus.
[0005]
When the chamber material is made of an alumite-treated aluminum-based metal material, a certain effect can be expected to suppress impurities when the alumite layer is healthy. However, when the alumite layer disappears due to plasma after a certain period of use, the base material is exposed and aluminum and other constituent metals are mixed into the plasma. This metal component contaminates the semiconductor wafer and reduces the yield.
[0006]
Further, since the chamber is usually located at the center of the plasma generator and is complexly coupled with peripheral devices, it is difficult to disassemble and clean each time the deposition film is cleaned. Therefore, it is difficult to completely remove the deposited film at the corners and the parts that are out of reach.
Further, in the method of providing a thin film proposed in JP-A-9-186137, cleaning is simple, but if the film has insufficient plasma resistance, discharge foreign matter is generated due to contact with plasma, and the semiconductor There is a risk of lowering the yield of the wafer.
[0007]
[Problems to be solved by the invention]
  According to the first and second aspects of the present invention, the chamber inner wall protecting member of the plasma generator capable of preventing the metal contamination of the semiconductor wafer and the yield reduction due to the discharge foreign matter and facilitating the removal of the deposit film of the plasma generator. Is to provide.
  Claim 36The invention described in (1) is to provide a chamber inner wall protecting member of a plasma generating apparatus which is further effective in the object of the invention described in claim 1, such as metal contamination of a semiconductor wafer and prevention of yield reduction due to discharge foreign matter.
[0008]
  Claim7The described invention can easily manufacture a chamber inner wall protection member of a plasma generating device that can prevent metal contamination of a semiconductor wafer, a decrease in yield due to discharge foreign matter, and can easily remove a deposit film of the plasma generating device. A manufacturing method is provided.
  Claim8The described invention provides a method for protecting the inner wall of a chamber of a plasma generator that prevents metal contamination of a semiconductor wafer and a decrease in yield due to discharge foreign matter, and facilitates removal of a deposit film of the plasma generator. It is.
  Claim9SUMMARY OF THE INVENTION The described invention provides a plasma generator capable of preventing yield deterioration due to metal contamination of a semiconductor wafer and discharge foreign matter and facilitating removal of a deposit film of the plasma generator.
  Claim10The described invention provides a plasma processing method that prevents metal contamination of a semiconductor wafer and a decrease in yield due to discharge foreign matter, and facilitates removal of a deposition film of a plasma generator.
[0009]
[Means for Solving the Problems]
  The present invention has a glassy carbon member formed into a cylindrical shape obtained by carbonizing and firing a cylindrical resin molded body.And the glassy carbon member has a cut surface connecting the upper end and the lower end of the tube.The present invention relates to a chamber inner wall protection member of the plasma generator.
  In the present invention, the glassy carbon member formed in the cylindrical shape is formed in a cylindrical shape.Plasma generatorAbout chamber inner wall protection member.
The present invention also relates to a chamber inner wall protection member of a plasma generating apparatus in which a spacer is inserted or fitted into the cut surface.
  The present invention also relates to a chamber inner wall protecting member of a plasma generating apparatus in which a cross-sectional shape of the spacer is T-shaped or H-shaped.
  The present invention also relates to a chamber inner wall protecting member of a plasma generating apparatus in which the spacer is a resin.
  The present invention also relates to a chamber inner wall protecting member of a plasma generating apparatus in which at least a surface of the spacer that comes into contact with plasma is made of glassy carbon.
[0010]
  The present invention also provides a thermosetting resin., Having a cutting surface connecting the upper and lower ends of the tubeThe present invention relates to a method for producing a chamber inner wall protective member, which is cast-molded using a cylindrical mold and carbonized and fired to obtain a glassy carbon member..
The present invention also relates to a method for protecting a chamber inner wall of a plasma generator, wherein the chamber inner wall protecting member of the plasma generator described above is installed on the chamber inner wall of the plasma generator.
  The present invention also relates to a plasma generating apparatus comprising the chamber inner wall protecting member described above.
  Furthermore, the present invention relates to a plasma processing method using the plasma generator.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
  FIG. 1 shows a schematic view of an example of a plasma generator having the chamber inner wall protecting member of the present invention.
  The chamber inner wall protecting member of the plasma generator referred to in the present invention is installed between the plasma and the chamber inner wall. In the plasma etching apparatus of FIG. 1, an upper electrode 4 and a lower electrode 6 are installed inside a chamber 1, and a semiconductor wafer 5 is placed on the lower electrode 6. Gas is introduced from the gas inlet 3 and gas is exhausted from the gas outlet 8 by a vacuum pump. A high frequency voltage is applied between the upper electrode 4 and the lower electrode 6 to generate plasma 7 in the center. At this time,CircleTubeformGlassy carbon member2The chamber inner wall protection partMaterialProtects the inner surface of the chamber and prevents exhaustion of the chamber due to plasma. Further, since the deposition film generated at the same time adheres to the surface of the chamber inner wall protection member, the member also prevents the deposition film from adhering to the inner surface of the chamber.
[0012]
The glassy carbon used for the chamber inner wall protecting member of the present invention can be obtained by carbonizing and baking a cured product of a thermosetting resin. There is no restriction | limiting in particular as a thermosetting resin used, A phenol resin, an epoxy resin, an unsaturated polyester resin, a furan resin, a melamine resin, an alkyd resin, a xylene resin etc. can be mentioned. A mixture of these resins can also be used. Among these resins, glassy carbon having good characteristics can be obtained, and therefore it is preferable to use furan resin, phenol resin, or a mixed resin thereof as a material.
[0013]
The above-mentioned thermosetting resin is a cylindrical resin molded body obtained by cast molding into a cylindrical mold or molding by a centrifugal molding method in order to obtain a target cylindrical glassy carbon member. Is calcined and fired. A method of cast-molding into a cylindrical mold and carbonizing and firing the resulting resin molded body is preferable because a member having a good shape can be easily obtained. The cylindrical formwork may have a cut surface connecting the upper and lower ends of the cylinder.
  Examples of the shape of the cylinder include a cylindrical shape, a substantially cylindrical shape, and a polygonal column shape, and may have a shape having a cut surface connecting the upper end and the lower end of the cylinder. In general, the inner wall of the chamber has a cylindrical shape, and since the gap with the inner wall of the chamber can be reduced and the effects of the present invention can be enhanced, the cylindrical shape is preferred.Yes.
[0014]
The dimensions of the resin cylinder are preferably determined in consideration of shrinkage during carbonization firing. Further, at the resin stage, the cylinder may be subjected to necessary processing such as an observation window, a gas introduction hole, and a wafer transfer port.
After the resin cylinder is formed into a predetermined shape by the above method, heat treatment at a maximum temperature of 130 to 200 ° C. is performed as necessary to sufficiently cure the thermosetting resin. If the resin is not sufficiently cured, defects may occur in the structure during firing, and if remarkable, foaming and cracking may occur, and a glassy carbon member having good characteristics may not be obtained.
[0015]
Next, in an inert atmosphere (a gas atmosphere containing no oxygen, such as an inert gas such as helium or argon, or a non-oxidizing gas such as nitrogen, hydrogen, or halogen gas), under reduced pressure, under vacuum, or graphite powder In an atmosphere where the air is shielded by being buried in carbon powder or the like, the carbonization is usually performed at a temperature of about 900 ° C. or higher, preferably 1000 ° C. to 1200 ° C. Thereafter, glassy carbon can be obtained by performing high-temperature heat treatment preferably at 1300 ° C to 3000 ° C.
After obtaining a glassy carbon tube by the above method, if necessary, finish processing of dimensions, observation window, gas exhaust port, wafer transfer by known processing methods such as diamond drilling, ultrasonic processing, etc. Processing such as a mouth may be performed.
[0016]
The cylindrical glassy carbon member obtained by the above method can be used as a protective member for a chamber of a plasma generator as it is.
In general, however, glassy carbon is greatly shrunk (usually about 10 to 30%) in the process of carbonizing and firing the cured resin, and the firing shrinkage varies slightly depending on the cured state of the resin and the like. The dimensions of the glassy carbon member have a certain variation. For this reason, the outer diameter of the glassy carbon member fluctuates, and even if it is originally intended to fit inside the chamber without a gap, the gap becomes larger if the shrinkage is large, and the disadvantage that it cannot enter the chamber if the shrinkage is small. is there. Further, in the case of a cylindrical shape, the same problem is likely to occur when the roundness is deteriorated due to deformation of the cylinder during curing or firing.
[0017]
  Therefore, the glassy carbon member in the present invention may have a cut surface connecting the upper end and the lower end of the cylinder so that they can be adjusted.Needed. It is preferable that the cut surface has a shape cut at right angles to the circumferential direction of the cylinder and linearly. The cut surface connecting both ends of the cylinder may be formed before molding or before carbonization and firing after molding, or may be formed after carbonization and firing. In addition, a gap may be provided between the formed cut end face and the cut end face in a state where no force is applied, or a shape in which the circumference partially overlaps may be used.
[0018]
The chamber inner wall protective member of the present invention further includes a spacer that is inserted or fitted into the cut surface of the glassy carbon member, and has a structure in which the diameter can be adjusted by this insertion. This is preferable because the effect of preventing the yield of the wafer from being contaminated by metal contamination and discharge foreign matter is further enhanced.
At this time, if the outer diameter of the glass-like carbon member tube is larger than the inner diameter of the chamber, the cut end face can be further cut so that the length of the circumference can be adjusted to be shorter so as to be within the chamber. In addition, when the outer diameter of the cylinder is smaller than the inner diameter of the chamber and the gap between the two is large, the spacer can be widened to widen the inner diameter of the cylinder to reduce the gap.
[0019]
Although the cross-sectional shape of the spacer is not particularly limited, it is preferable that the spacer has an H shape or a T shape because a gap is hardly generated between the cylindrical glassy carbon member and the spacer.
FIG. 2 shows a perspective view of an example of a cylindrical chamber inner wall protective member into which a spacer is inserted or fitted. FIG. 3 is a partial cross-sectional view showing a state where the chamber inner wall protection member is installed in the chamber. 2 and 3, 9 is a cylindrical glassy carbon member, 10 is a spacer, and 11 is a chamber inner wall.
[0020]
When the cross-sectional shape is H-shaped, as shown in (1) of FIG. 3, the cut portions of the glassy carbon member are fitted into the openings on both sides of the spacer, that is, fitted, and adjusted to a cylindrical shape. Is preferred. At this time, the cross-sectional shape of the cut portion may be in a state of being cut as shown in FIG. 3 (1), but as shown in FIG. 3 (2), the inner and outer peripheral surfaces of the portion in contact with the spacer As shown in FIG. 3 (3), at least the outer peripheral surface or the inner peripheral surface of the portion in contact with the spacer is cut to reduce the thickness. This is preferable because the step of the carbon cylinder can be reduced. This cutting process may be performed at the resin stage, or may be performed after becoming glassy carbon.
Further, when the cross-sectional shape of the spacer is T-shaped, the spacer may be inserted by any of the methods (4) and (5) in FIG. Also, as shown in (6) of FIG. 3, the outer peripheral surface is cut to provide a gap, and the step between the spacer and the glassy carbon cylinder on the outer periphery is reduced, or the inner peripheral surface is cut on the contrary. A gap between the spacer and the glassy carbon cylinder on the inner circumference may be reduced.
[0021]
The material of the spacer of the present invention is not particularly limited, but a resin is preferable in terms of workability and flexibility. The type of resin is not particularly limited, but polyimide resin, Teflon resin, silicon resin, and the like are preferable from the viewpoint of plasma resistance, workability, low impurities, and the like.
A spacer can be produced by machining a molded product of these resins, for example, a plate or a rod. For the machining, a generally known method such as NC machining can be used.
[0022]
In addition, the above spacer is preferably made of glassy carbon at least on the surface in contact with the plasma because of high purity and no dust generation. According to this method, since the entire chamber inner surface can be covered with glassy carbon, it is possible to obtain excellent characteristics for both discharge foreign matter and metal contamination.
In this case, the portion of the spacer that does not contact the plasma need not be glassy carbon. In this case, the glassy carbon member can be fixed and integrated on the surface of the resinous spacer that comes into contact with the plasma by a method such as adhesion or screwing to form a spacer.
[0023]
The size of the cylindrical glassy carbon member used in the present invention is designed according to the size of the chamber of the plasma generator and is not particularly limited, but is preferably a cylinder having an outer diameter of φ200 to 800 mm. . When the outer diameter is smaller than φ200 mm, the degree of freedom of deformation when adjusting the diameter is reduced, and the cylinder may be destroyed during mounting. On the other hand, if the outer diameter is larger than φ800 mm, deformation during firing tends to increase, and it tends to be difficult to obtain a good cylinder. In addition, the outer diameter here refers to the diameter in the case of a cylindrical shape, and refers to the diameter of the smallest circle that can be inscribed in other cylindrical shapes.
The length of the cylinder is preferably 20 to 500 mm. If it is less than 20 mm, the strength of the cylinder is weak, so that the deformation of both end faces of the cylinder tends to increase. On the other hand, if it exceeds 500 mm, the deformation in the length direction becomes large, and there is a tendency that a good cylinder cannot be obtained.
Moreover, about the thickness of a cylinder, the range of 0.2-5 mm is preferable. If the thickness is less than 0.2 mm, the strength tends to be weak, and if it exceeds 5 mm, volatilization of volatile components during firing becomes difficult, and cracks and blisters tend to occur.
[0024]
Further, the size of the spacer is not particularly limited. Since the length is used in combination with a glassy carbon member, the length is the same as the preferable length range of the cylindrical glassy carbon member described above.
Regarding the width, it is preferable that the portion entering between the cut surfaces of the cylinder is 0.5 to 50 mm. If it is less than 0.5 mm, the shape of the spacer tends not to be maintained. On the other hand, if it exceeds 50 mm, the plasma area increases, and the plasma resistance of the cylindrical glassy carbon member tends to be relatively reduced. .
In addition, when the spacer has a protruding portion formed in a T shape, H shape or the like in order to suppress the cut surface and securely fix the spacer, the width of each protruding portion is 0.5 to 30 mm. Is preferred. If it is less than 0.5 mm, the fixing of the spacer tends to be unstable, and if it exceeds 30 mm, the area of the resin increases unnecessarily, and the plasma resistance tends to decrease relatively.
[0025]
Regarding the thickness, it is preferable that the thickness protruding from the inner periphery and the outer periphery of the cylinder is 3 mm or less. When it is larger than 3 mm, in the case of the inner circumference, the plasma concentrates on the spacer and the discharge foreign matter tends to increase. Further, in the case of the outer periphery, the gap with the chamber becomes large, and the deposition film tends to accumulate here.
Moreover, in order to reduce the protrusion of a spacer, it is good also as a curved surface which matched the shape of the inner peripheral part to the cylinder.
The size of the portion of the spacer that falls between the cross sections of the cylinder is very important in adjusting the outer diameter of the cylinder. The size of this part may be processed according to this dimension by measuring the outer diameter of the actually produced glassy carbon member, or a spacer with a slightly different size may be produced in advance. The optimum one can be selected.
[0026]
In the method for protecting the chamber inner wall of the plasma generating apparatus of the present invention, the chamber inner wall protecting member may be installed on the chamber inner wall of the plasma generating apparatus, and is preferably in close contact with the wall as much as possible.
The method for installing and fixing the chamber inner wall protection member in the chamber is not particularly limited. Usually, the chamber inner wall protection member is simply placed on a flange or the like protruding from the bottom or midway of the chamber. A method of fixing the chamber and the protective member is used.
The plasma generating apparatus of the present invention is the same as a known apparatus except that the chamber inner wall protective member is mounted as shown in FIG.
The plasma processing method of the present invention is achieved by using the plasma generator.
[0027]
【Example】
Hereinafter, the present invention will be described in detail with reference to examples.
Example 1
A cylindrical chamber inner wall protective member made of glassy carbon that protects the cylindrical chamber inner wall of a plasma etching apparatus having an inner diameter of 400 mm and a height of 160 mm was manufactured by the following method.
The chamber is an aluminum alloy whose inner surface is anodized.
[0028]
To 100 parts by weight of furan resin initial condensate (manufactured by Hitachi Chemical Co., Ltd., VF-302), 0.5 parts by weight of paratoluenesulfonic acid and 0.5 parts by weight of ethylene glycol are added and mixed thoroughly to obtain a raw material. . This is cast into a cylindrical mold containing a core with an inner diameter of 480 mm, an outer diameter of 510 mm, and a height of 250 mm, and is heat treated at room temperature for 10 days, at 60 ° C. for 10 days, and at 100 ° C. for 5 days to form a cylindrical resin A cured product was obtained. The obtained cured product was processed with a lathe, finished to dimensions of outer diameter φ500 mm × inner diameter φ492 mm (thickness 4 mm), height 200 mm, and post-cured at a maximum temperature of 150 ° C. to obtain a resin cylindrical molded body. The molded body is placed in an electric furnace, calcined and carbonized at a temperature of 1000 ° C. in a nitrogen stream at a rate of 2 ° C./hour, and then 2000 ° C. in a nitrogen atmosphere using a jig and an atmosphere furnace that have been processed to high purity. A high temperature treatment was performed at a temperature of 1 to obtain a glassy carbon cylinder. Since the resin molded body contracted by about 20% during firing, the obtained glassy carbon cylinder had an average outer diameter of φ395.5 mm, a thickness of 3.2 mm, and a height of 160 mm. It was 2.5 mm.
[0029]
The obtained glassy carbon cylinder was completed by ultrasonic processing of an observation window 14, a gas discharge port 15, and a wafer transfer port 13 as shown in FIG. 4 (development of the cylinder). This was inserted into the chamber of the etching apparatus, and plasma was generated to perform etching.
When the metal contamination state of the obtained wafer was examined by total reflection fluorescent X-ray analysis, the total of the measured values of Fe, Cr and Ni was 9 × 10.^Tenatoms / cm²15 × 10 when cylinder is not used^Tenatoms / cm²2/3 or less. Further, when the discharge foreign matter of 0.3 μm or more was measured with a particle counter, the average was 10 pieces / wafer when a cylinder was used, which was about half of the case when not used. Furthermore, after the glassy carbon cylinder was pulled out after 200 hours of use and the deposit film adhered to the inner surface was removed, the cleaning was completed in about 1/4 time compared to the conventional case where no cylinder was used. The cleaning discharge time for reducing the discharge foreign matter was about 1/5.
[0030]
Example 2
A glassy carbon cylinder that protects the inner wall of the cylindrical chamber of a plasma etching apparatus having an inner diameter of 460 mm and a height of 80 mm was manufactured by the following method. The material of the chamber is an aluminum alloy whose inner surface is anodized.
The same resin as in Example 1 was sufficiently mixed with the same curing agent to obtain a raw material. This is cast into a cylindrical mold containing a core with an inner diameter of 580 mm x outer diameter of 610 mm and a height of 150 mm, and heat treated at room temperature for 20 days, at 60 ° C. for 10 days, and at 100 ° C. for 10 days for cylindrical resin Six cured products were produced. The obtained cured product was processed with a lathe to obtain a cured resin cylindrical product having an outer diameter of 588 to 595 mm, a height of 97 mm, and a thickness of 3.5 mm.
The obtained resin cylinder was processed into an observation window, a gas discharge port, and a wafer transfer port as shown in FIG. 4 using an NC processing machine, a lathe, etc., and then post-cured at 150 ° C. for 3 days. This was subjected to carbonization firing and high-temperature treatment under the same conditions as in Example 1 to obtain six glassy carbon cylinders.
Since the cured resin body contracted by about 19 to 20% during firing, the obtained six glassy carbon cylinders had an outer diameter of 470 to 480 mm, a thickness of 3.1 mm, and a height of 77 to 79 mm. It was. All cylinders were cut at right angles to the circumferential direction and processed so that the outer circumference had a length of 1438 to 1442 mm.
[0031]
A spacer obtained by processing the polyimide resin molded body into the shape shown in (1) to (6) of FIG. 3 (in the case of (2), (3), (5), the glassy carbon member is also shown in each drawing. Etching was performed by generating a plasma by combining the components in the above-mentioned etching apparatus.
The size of the spacer was determined for each of the six cylinders so that the gap between the inner surface and the inner surface when inserted into a cylinder with an inner diameter of 460 mm was minimized. This size was 3-7 mm. Note that the widths of the overhang portions for suppressing the cut surface were all 5 mm.
[0032]
It inserted in the chamber of the etching apparatus similarly to Example 1, plasma was generated, and it etched.
When the metal contamination and discharge foreign matter of the wafer obtained in the same manner as in Example 1 were analyzed, the total of the measured values of Fe, Cr, and Ni was 6 to 10 × 10.^Tenatoms / cm²14-23 × 10 when the cylinder is not used^Tenatoms / cm²It was less than that. Also 0. When the discharge foreign matter of 3 μm or more was measured with a particle counter, the average was 8 to 15 wafers / wafer when the cylinder was used, and was reduced from 17 to 40 wafers / wafer when the cylinder was not used. In addition, after the glass-like carbon cylinder was pulled out after 150 hours of use and the deposit film adhered to the inner surface was removed, the cleaning was completed in about 1/3 of the time when the conventional cylinder was not used. The cleaning discharge time for reducing the discharge foreign matter was about 1/4.
[0033]
Example 3
In Example 2, a spacer having the same shape was made of glassy carbon and used. This spacer is made by pouring the same raw material as the cylinder into the mold, and curing, firing, and high-temperature treatment were performed under exactly the same conditions. And finished with the same dimensions.
When this spacer was used and a plasma test similar to that for the polyimide resin was performed, the metal contamination was reduced to about 80% for the resin and about half for the discharge foreign matter.
[0034]
【The invention's effect】
  When the chamber inner wall protecting member of the plasma generator according to claim 1 or 2 is used, it is possible to prevent metal contamination of the semiconductor wafer and a decrease in yield due to discharge foreign matter, and to facilitate removal of the deposition film of the plasma generator. it can.
  Claim 36If the chamber inner wall protective member of the plasma generator described in 1 is used, the effects thereof can be further enhanced.
  Claim7According to the described manufacturing method, it is possible to easily prevent the chamber inner wall protection member of the plasma generating apparatus which can prevent the metal contamination of the semiconductor wafer and the yield reduction due to the discharge foreign matter, and can easily remove the deposit film of the plasma generating apparatus. Can be manufactured.
[0035]
  Claim8According to the method for protecting the inner wall of the chamber of the plasma generator described above, it is possible to prevent the yield of the semiconductor wafer from being contaminated by metal contamination and discharge foreign matter, and to easily remove the deposit film of the plasma generator.
  Claim9The described plasma generator prevents metal contamination of the semiconductor wafer and a decrease in yield due to discharge foreign matter, and facilitates removal of the deposition film.
  Claim10According to the described plasma processing method, it is possible to prevent the yield of the semiconductor wafer from being contaminated by metal contamination and discharge foreign matter, and to easily remove the deposition film of the plasma generator.
[Brief description of the drawings]
FIG. 1 is a schematic view of an example of a plasma generator of the present invention having a chamber inner wall protecting member of the present invention.
FIG. 2 is a perspective view showing an example of a chamber inner wall protection member of the present invention.
FIG. 3 is a partial cross-sectional view in the circumferential direction showing an example of the shape of the spacer of the chamber inner wall protecting member of the present invention, the surrounding cylindrical glassy carbon member, and the chamber inner wall.
FIG. 4 is a side external view of the cylindrical chamber inner wall protecting member according to the present invention when deployed.
[Explanation of symbols]
1 Plasma generator chamber
2 Cylindrical glassy carbon member
3 Gas inlet
4 Upper electrode
5 Semiconductor wafer
6 Lower electrode
7 Plasma
8 Gas exhaust port
9 Cylindrical glassy carbon member
10 Spacer
11 Chamber inner wall
12 Cylindrical glassy carbon member
13 Semiconductor wafer transfer port
14 Observation window
15 Etching gas outlet

Claims (10)

Plasma having a glassy carbon member formed into a cylindrical shape obtained by carbonizing and firing a cylindrical resin molded body , and the glassy carbon member having a cut surface connecting the upper end and the lower end of the tube A chamber inner wall protection member of the generator. The chamber inner wall protecting member for a plasma generator according to claim 1, wherein the glassy carbon member formed in a cylindrical shape is formed in a cylindrical shape. The chamber inner wall protecting member of the plasma generator according to claim 1 or 2 , wherein a spacer is inserted or fitted into the cut surface. The chamber inner wall protecting member for a plasma generating apparatus according to claim 3 , wherein a cross-sectional shape of the spacer is T-shaped or H-shaped. The chamber inner wall protecting member of the plasma generator according to claim 3 or 4 , wherein the spacer is a resin. The chamber inner wall protecting member for a plasma generating apparatus according to claim 3 , 4 or 5 , wherein at least a surface of the spacer that comes into contact with plasma is made of glassy carbon. The thermosetting resin is cast-molded using a cylindrical mold having a cut surface connecting the upper and lower ends of the cylinder, and the resulting resin molded body is carbonized and fired to form a glassy carbon member. Manufacturing method of chamber inner wall protection member. A method for protecting a chamber inner wall of a plasma generator, comprising: installing the chamber inner wall protection member of the plasma generator according to any one of claims 1 to 6 on a chamber inner wall of the plasma generator. The plasma generating apparatus comprising wearing the inner wall of the chamber protection member according to any one of claims 1-6. A plasma processing method using the plasma generator according to claim 9 .

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