JP3816052B2 - Method for producing spherical siliceous powder - Google Patents
Method for producing spherical siliceous powder Download PDFInfo
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- JP3816052B2 JP3816052B2 JP2002373594A JP2002373594A JP3816052B2 JP 3816052 B2 JP3816052 B2 JP 3816052B2 JP 2002373594 A JP2002373594 A JP 2002373594A JP 2002373594 A JP2002373594 A JP 2002373594A JP 3816052 B2 JP3816052 B2 JP 3816052B2
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Description
【0001】
【発明の属する技術分野】
本発明は、充填率が高くても、流動性、成形性に優れる半導体封止材料を得ることができる球状シリカ質粉末の製造方法に関する。
【0002】
【従来の技術】
近年、電子機器の小型軽量化、高性能化の動向に対応して、半導体パッケージの小型化、薄型化、狭ピッチ化が益々加速している。また、その実装方法も配線基板などへの高密度実装に好適な表面実装が主流になりつつある。このように、半導体パッケージとその実装方法が進展する中、半導体封止材料にも高性能化、特に半田耐熱性、耐湿性、低熱膨張性、機械的特性、電気絶縁性などの機能向上が要求されている。これを満たすため、エポキシ樹脂に無機質粉末、特に非晶質シリカ粉末を高充填した半導体封止材料が用いられており、半導体封止材料の90%近くがこの樹脂組成物によるものである。
【0003】
エポキシ樹脂にシリカ質粉末を高充填する際の課題は、樹脂組成物の流動性を低下させ、リードフレーム変形、ワイヤー流れ、ダイシフト、ボイド発生など成形加工上の不良を増大させることである。これを解決するため、シリカ質粉末の形状や粒度分布を最適化する試みや、エポキシ樹脂やフェノール樹脂硬化剤などの樹脂成分の粘度を封止形成される温度域において可及的に小さくすることによって、流動性を保ち、成形性を改良する試みなどが続けられているが、これらはかなり困難な課題として益々クローズアップされている。
【0004】
シリカ質粉末側の改善技術としては、ワーデルの球形度で0.7〜1.0とし、より球形度を高くする方法(特許文献1)、平均粒径0.1〜1μm程度の球状微小粉末を少量添加する方法(特許文献2)、粒度分布を最適化する方法(特許文献3)などの多くの提案がある。
【0005】
球形度の高いシリカ質粉末を得るには、粒度分布を調整した原料を火炎中で溶融し、特定平均球形度のものを取得すること(特許文献4)が提案されている。
【0006】
【特許文献1】
特開平3−66151号公報
【特許文献2】
特開平5−239321号公報
【特許文献3】
特開平11−202691号公報
【特許文献4】
特開2000−73355号公報
【0007】
【発明が解決しようとする課題】
こうした技術により、樹脂の流動性及び成形性は大きく改善されたが、今日の更なる要求に対しては、まだまだ改善の余地があった。たとえば、本発明者らのその後の検討によれば、球状シリカ質粉末の球形度が高くても、粒子表面に、粒子径が0.1μm以下といった超微粒子が多く付着していると、樹脂に充填した際、高粘度となる問題を見いだした。しかも、こうした超微粒子を単に除去すればいいというのでは無く、超微粒子の付着の程度については適正値があることを本発明者らは見出した。
【0008】
融点以上の雰囲気を形成する高温火炎中に原料粉末を噴射すると蒸発成分が析出固化するというのが、超微粒子付着の原因であるが、原料の粒度が粗いほど、必要熱量が増える結果として、超微粒子が発生しやすい。一方で、本発明者らの研究によれば、高充填可能なフィラーを構成するには、10μm以下の微粉成分の他に、20〜70μmの粒子径を持つ粉末を配合することが好ましい。即ち、D50が20〜70μmの粉末であって、球形度が高く、且つ粒子表面の超微粒子の付着状態が適正化された粉末の開発が望まれる。
【0009】
一方、球状化されたシリカ質粉末の表面に付着した超微粒子は付着力が強く、乾式分級による除去では限界がある。この処理を湿式で行うとなると、湿式工程の他、乾燥工程が必要となって経済的でなくなるといった問題がある。
【0010】
本発明の目的は、上記に鑑み、充填率が高くても流動性、成形性に優れる半導体封止材用充填材として好適な球状シリカ質粉末の製造方法を提供することである。
【0011】
【課題を解決するための手段】
すなわち、本発明は、シリカ質粉末原料を高温火炎中に噴射して球状化させるに際し、可燃ガスと助燃ガスを噴出するバーナーを用い、可燃ガス量に対する助燃ガス量を理論燃焼量の0.5倍以上、1.0倍未満とし、且つシリカ質粉末原料の粒度分布が、下式(イ)、(ロ)の条件を満たすことを特徴とする、D 50 が20〜70μm、30μm以上の粒子径を持つ粒子の平均球形度が0.85以上、BET法により測定した比表面積が0.2〜0.8m 2 /g、非晶質率95%以上である球状シリカ質粉末の製造方法である。
(イ)(D75−D25)/D50≦1.5
(ロ)(D50/5)μm以下の粒子の含有率が15質量%以下
ここで、D75:粒度分布において累積質量分布が75%となる粒子径、
D25:粒度分布において累積質量分布が25%となる粒子径、
D50:粒度分布において累積質量分布が50%となる粒子径、
である。
【0012】
【発明の実施の形態】
以下、本発明について更に詳しく説明する。
【0013】
まず、本発明の製造方法によって得られる球状シリカ質粉末について説明すると、この球状シリカ質粉末は、D50が20〜70μm、BET法により測定した比表面積が0.2〜0.8m2/gである。比表面積の値が大きいということは、粒子に付着している超微粒子の粒子径が小さく、また、その数が多いことを意味する。このような超微粒子は球状シリカ質粉末の高充填時に樹脂組成物を増粘させ、流動性、成形性を損なわせてしまう。しかし、こうした超微粒子の付着の割合が少なすぎると、成形の際、バリが長くなり、作業効率を下げてしまう問題があることを本発明者らは見出した。すなわち、超微粉が適当量、表面に付着していることが好ましく、その指標として、BET法により測定した比表面積が0.2〜0.8m2/gでなければならず、好ましくは0.4〜0.6m2/gである。
【0014】
しかし、本発明者らの研究によれば、低比表面積の粉末に、粒子径が0.1μm以下の超微粒子を多く含む粉末を後添加する方法では、本発明の効果発現が小さいことが分かっている。本発明者らの考察によれば、後から超微粉を添加する方法では、超微粉が均一に樹脂中に分散しにくい為である。即ち、本発明の球状シリカ質粉末は、超微粉末を後添加せずとも、前述の比表面積の条件を備えさせたものである。
【0015】
また、本発明によって製造される球状シリカ質粉末は、30μm以上の粒子径を持つ粒子の平均球形度が0.85以上である。好ましくは、累積粒度分布75%(D75)未満の粒子径を持つ粒子の平均球形度が0.90以上、D75以上の粒子径を持つ粒子の平均球形度が0.80以上である。一般に球状シリカ質粉末の平均球形度を上げれば流動性が向上する傾向にあるが、特にD75以上の粒子径を持つ粗い粒子の平均球形度を0.80以上とすることによって、本発明の効果がより高められる。
【0016】
球状シリカ質粉末の粒度分布は、レーザー回折光散乱法による粒度測定に基づく値であり、粒度分布測定機としては、例えば「モデルLS−230」(ベックマンコールター社製)が用いられる。測定に際しては、溶媒には水を用い、前処理として、1分間、ホモジナイザーを用いて200Wの出力をかけて分散処理させた。また、PIDS(Polarization Intensity Differential Scattering)濃度を45〜55%になるように調製した。なお、水の屈折率には1.33を用い、粉末の屈折率については粉末の材質の屈折率を考慮した。たとえば、非晶質シリカについては屈折率を1.50として測定した。
【0017】
比表面積は、BET法に基づく値であり、例えば比表面積測定機「モデル4−SORB U2」(湯浅アイオニクス社製)を用いて測定することができる。
【0018】
球形度は、実体顕微鏡(例えば、モデルSMZ−10型;ニコン社製など)、走査型電子顕微鏡等にて撮影した粒子像を画像解析装置(例えば、日本アビオニクス社製など)に取り込み、次のようにして測定することができる。すなわち、写真から粒子の投影面積(A)と周囲長(PM)を測定する。周囲長(PM)に対応する真円の面積を(B)とすると、その粒子の真円度はA/Bとして表示できる。そこで、試料粒子の周囲長(PM)と同一の周囲長を持つ真円を想定すると、PM=2πr、B=πr2であるから、B=π×(PM/2π)2となり、個々の粒子の球形度は、球形度=A/B=A×4π/(PM)2として算出することができる。このようにして得られた任意の粒子200個の真円度を求めその平均値を平均球形度とした。
【0019】
上記以外の真円度の測定法としては、粒子像分析装置(例えば、モデルFPIA−1000;シスメックス社製など)にて定量的に自動計測された個々の粒子の円形度から、式、真円度=(円形度)2により換算して求めることもできる。
【0020】
さらに、本発明によって製造される球状シリカ質粉末の非晶質率は、95%以上である必要があり、特に98%以上であることが好ましい。非晶質率がこれよりも小さいと、熱伝導性の向上は望めても、低熱膨張性と低誘電性の両方の特性を犠牲にすることの損失が大きくなる。
【0021】
非晶質率は、粉末X線回折装置(例えば、モデルMini Flex;RIGAKU社製)を用い、CuKα線の2θが26°〜27.5°の範囲において試料のX線回折分析を行い、特定回折ピークの強度比から測定することができる。たとえば、シリカの場合、結晶質シリカは26.7°に主ピークが存在するが、非晶質シリカではピークは存在せず、非晶質シリカと結晶質シリカが混在していると、それらの割合に応じた26.7°のピーク高さが得られるので、結晶質シリカ標準試料のX線強度に対する試料のX線強度の比から、結晶質シリカ混在比(試料のX線回折強度/結晶質シリカのX線回折強度)を算出し、式、非晶質率(%)=(1−結晶質シリカ混在比)×100、から非晶質率を求めることができる。
【0022】
本発明の球状シリカ質粉末の製造方法の特徴は、原料粉末の粒度分布の適正化と、高温火炎の形成調整にあり、この発明によって、上記球状シリカ質粉末を効率良く製造することができる。
【0023】
本発明の第1の条件は、可燃ガス量に対する助燃ガス量を理論燃焼量の0.5倍以上、1.0倍未満の条件で形成された高温火炎中に原料粉末を投入することである。なお、ここで言う助燃ガス量は、原料のキャリアガスに用いる助燃ガスの量をも合わせたものを指す。融点以上の雰囲気を形成する高温火炎中に原料粉末を噴射して得られた球状粉末には、蒸発成分が析出固化した極めて細かい粒子を含むが、可燃ガス量に対する助燃ガス量を1.0倍以上とすると、火炎が短くなって、発生した蒸発成分が成長することなく冷却固化される割合が多くなり、超微粒子の発生が多くなり、比表面積が0.8m2/gを越えてしまう。一方、0.5倍未満であると、火炎温度の低下により、球状シリカ質粉末の非晶質化率が低下するうえ、不完全燃焼によって発生した煤が製品に混入する。好ましい上記比率は0.6〜0.9倍である。
【0024】
可燃性ガスとしては、プロパン、ブタン、プロピレン、アセチレン、水素等の一種又は二種以上、また助燃ガスとしては、酸素ガス等の酸素含有ガスが用いられるがこれらに限定されるものではない。
【0025】
本発明の第2の条件は、原料の粒度分布を調整することにある。原料粉末の全てを溶融球状化させるに足る熱量で溶融する場合、原料粉末のD50に対して粒子径が小さすぎる粒子は、溶融時に凝集、又は他の粒子と融着して粉末の球形度を低下させる要因となる。とくに、可燃ガス量に対する助燃ガス量を理論燃焼量の0.5倍以上、1.0倍未満の条件で形成された火炎では、火炎長が長いのでこの傾向が顕著となる。そこで、本発明者らは、多くの実験を重ね、原料粉末の粒度を次の条件とすることによってこの問題を解決した。
【0026】
(イ)(D75−D25)/D50が1.5以下、好ましくは1.0以下。
(ロ)(D50/5)μm以下の粒子の含有率が15%以下、好ましくは10%以下。この(ロ)条件は、例えば平均粒径D50が30μmである原料粉末の場合、6(30/5)μm以下の粒子の含有率が15%以下、好ましくは10%以下であることを意味する。(イ)、(ロ)の条件を逸脱すると、20μm以上の粗い粒子を溶融する熱量は微粉にとって過剰であるため、粒子の融着を促進してしまい、高い球形度の粉末を得ることができなくなる。
【0027】
原料粉末の粒度分布を調整するには、篩や風力分級機等を用いることができるが、2回以上の分級処理を施すことによって微粉側及び粗粉側を除去することができるので、本発明ではこの方法が好適となる。なお、原料の調整に際しては、本発明にある原料粒度分布を達成できさえすればよく、分級方法はどのような方法でも良く、手段としては、湿式、乾式を問わない。
【0028】
本発明において、原料粉末としては、比較的良質の珪石、水晶、珪砂等を振動ミル等の手段で粉砕したものやその後分級処理したもの、またこれらを一旦溶融し、粉砕した溶融破砕品や球状化処理した溶融球状品、更にはこれらの混合品のいずれをも用いることができる。
【0029】
本発明を実施する装置としては、例えばバーナーを備えた炉体に捕集装置が接続されたものが採用される。その一例を示せば、特開平11−57451号公報、同11−71107号公報である。炉体は、開放型又は密閉型、あるいは縦型又は横型のいずれであってもよい。捕集装置には、サイクロン、バグフィルター等が用いられる。
【0030】
本発明は、球形度の低い粒子の含有率が少ない球状シリカ質粉末の製造方法に好適であり、これによって得られた球状シリカ質粉末を半導体封止材用充填材として用いると、封止材の高流動性、高充填性、高強度性を従来以上に高めることが可能となる。
【0031】
【実施例】
以下、本発明を実施例、比較例をあげて更に具体的に説明する。
【0032】
実施例1〜8 比較例1〜5
炉頂部にバーナーが設置された縦型炉と、その下部が捕集装置(バグフイルター)に連接されている装置(特開平11−57451号公報の実施例1)を用い、天然珪石を粉砕・分級されたシリカ原料粉末を、キャリアガス(酸素)により、プロパンガス(可燃ガス)−酸素(助燃ガス)の火炎中(火炎温度:約2000℃)に噴射して溶融・球状化後、分級することで、球状シリカ質粉末a〜lを製造した。更に、粉末fを水中に分散させて表面に付着した超微粒子を低減した後に乾燥させるという方法を採って、粉末mを製造した。
【0033】
シリカ原料粉末の粒度構成、可燃ガス量に対する助燃ガス量の割合、得られた球状溶融シリカ粉末の特性を表1に示す。なお、シリカ原料粉末投入量(kg/hr)/プロパンガス量(Nm3/hr)は3.0とした。
【0034】
得られた球状シリカ質粉末a〜mの半導体封止材料の充填材としての特性を評価するため、それらを表2に示す割合で混合して充填材A〜Mを調整した。なお、「FB−6D」及び「SFP−30M」は、電気化学工業社製の球状シリカ粉末であり、樹脂への充填性を高める粒度分布とするべく微粉側として配合した。なお、「FB−6D」は、D50が6μmでBET比表面積が3m2/gであり、「SFP−30M」は、D50が0.7μmであり、比表面積が6m2/gである。
【0035】
ついで、充填材90%、4,4’−ビス(2,3−エポキシプロポキシ)−3,3’、5,5’−テトラメチルビフェニル型エポキシ樹脂4.2%、フェノール樹脂4.3%、トリフェニルホスフィン0.2%、γ−グリシドキシプロピルトリメトキシシラン0.5%、カーボンブラック0.3%、カルナバワックス0.5%(これらの合計は100%である)を加え、ヘンシェルミキサーにてドライブレンドした後、同方向噛み合い二軸押出混練機(スクリュー径D=25mm、ニーディングディスク長250mm、パドル回転数150rpm、吐出量5kg/h、ヒーター温度105〜110℃)で加熱混練した。これを冷却プレス機にて冷却した後、粉砕してエポキシ樹脂組成物を得、半導体封止材料とした。その流動性(スパイラルフロー)と、バリ長さと、成形性(ボイド数)を以下に従って評価した。それらの結果を表2に示す。
【0036】
流動性(スパイラルフロー)
EMMI−I−66(Epoxy Molding Material Institute;Society of Plastic Industry)に準拠したスパイラルフロー測定用金型を取り付けたトランスファー成形機を用いて、前記エポキシ樹脂組成物のスパイラルフロー値を測定した。トランスファー成形条件は、金型温度175℃、成形圧力7.4MPa、保圧時間90秒とした。
【0037】
バリ長さ
2μm、5μm、10μm、30μmのスリットを持つバリ測定用金型を用い、成形温度は175℃、成形圧力は7.4MPaで成形した際にスリットに流れ出た樹脂をノギスで測定し、それぞれのスリットで測定された値を平均しバリ長さとした。
【0038】
成形性(ボイド数)
160ピンQFP(Quad Flat Package;28mm×28mm、厚さ3.6mm、模擬ICチップサイズ15mm×15mm)の半導体パッケージをトランスファー成形機を用いて24個作製し、パッケージ内に残存する0.1mm以上のボイド数を超音波探傷機を用いてカウントし、1パッケージあたりのボイド数を算出した。トランスファー成形条件は、金型温度175℃、成形圧力7.4MPa、保圧時間90秒とし、エポキシ樹脂組成物のプレヒート温度は80℃とした。
【0039】
【表1】
【0040】
【表2】
【0041】
表1の実施例と比較例の対比から明らかなように、本発明のように原料粉末の粒度分布を適正化し、火炎形成条件を調整することによって、比表面積が低くて、球形度の高い球状シリカ質粉末を得ることができる。また、表2の実施例と比較例の対比から明らかなように、本発明によって得られた球状シリカ質粉末からなる充填材によれば、流動性に優れた樹脂組成物となる。
【0042】
【発明の効果】
本発明によれば、充填率が高くても流動性、成形性に優れる半導体封止材用充填材として好適な球状シリカ質粉末を容易に製造することができる。本発明によって得られた球状シリカ質粉末は、例えば樹脂組成物の充填材と使用することができ、充填材の充填率が高くても流動性及び成形性に優れた樹脂組成物となる。 [0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for producing a spherical siliceous powder capable of obtaining a semiconductor sealing material having excellent fluidity and moldability even when the filling rate is high.
[0002]
[Prior art]
In recent years, in response to the trend toward smaller and lighter electronic devices and higher performance, semiconductor packages have been increasingly reduced in size, thickness, and pitch. As the mounting method, surface mounting suitable for high-density mounting on a wiring board or the like is becoming mainstream. As semiconductor packages and their mounting methods are progressing in this way, semiconductor sealing materials are also required to have higher performance, especially improved solder heat resistance, moisture resistance, low thermal expansion, mechanical properties, electrical insulation, etc. Has been. In order to satisfy this, a semiconductor sealing material in which an epoxy resin is highly filled with an inorganic powder, particularly amorphous silica powder, is used, and nearly 90% of the semiconductor sealing material is due to this resin composition.
[0003]
The problem when highly filling the epoxy resin with the siliceous powder is to reduce the fluidity of the resin composition and to increase defects in molding processing such as lead frame deformation, wire flow, die shift, and void generation. To solve this problem, try to optimize the shape and particle size distribution of siliceous powder, and reduce the viscosity of resin components such as epoxy resins and phenol resin curing agents as much as possible in the temperature range where sealing is formed. Therefore, attempts to maintain fluidity and improve moldability are continued, but these are increasingly being raised as difficult problems.
[0004]
As an improvement technique on the siliceous powder side, a method of increasing the sphericity by setting the sphericity of the Wadel to 0.7 to 1.0 (Patent Document 1), a spherical fine powder having an average particle size of about 0.1 to 1 μm There are many proposals such as a method of adding a small amount (Patent Document 2) and a method of optimizing the particle size distribution (Patent Document 3).
[0005]
In order to obtain a siliceous powder having a high sphericity, it has been proposed to obtain a material having a specific average sphericity by melting a raw material having an adjusted particle size distribution in a flame (Patent Document 4).
[0006]
[Patent Document 1]
Japanese Patent Laid-Open No. 3-66151 [Patent Document 2]
JP-A-5-239321 [Patent Document 3]
Japanese Patent Laid-Open No. 11-202691 [Patent Document 4]
Japanese Patent Laid-Open No. 2000-73355
[Problems to be solved by the invention]
Although such techniques have greatly improved the flowability and moldability of the resin, there is still room for improvement in response to today's further demands. For example, according to subsequent studies by the present inventors, even when the spherical siliceous powder has a high sphericity, if a large amount of ultrafine particles having a particle diameter of 0.1 μm or less are adhered to the particle surface, the resin We found a problem of high viscosity when filled. Moreover, the present inventors have found that there is an appropriate value for the degree of adhesion of ultrafine particles, rather than simply removing such ultrafine particles.
[0008]
When the raw material powder is injected into a high-temperature flame that forms an atmosphere higher than the melting point, the evaporation component precipitates and solidifies.This is the cause of the adhesion of ultrafine particles. Easy to generate fine particles. On the other hand, according to the study by the present inventors, it is preferable to blend a powder having a particle size of 20 to 70 μm in addition to a fine powder component of 10 μm or less in order to constitute a highly fillable filler. That, D 50 is a powder of 20 to 70 m, a sphericity of rather high, and the adhesion state of the ultrafine particles of the particle surface is desired the development of optimized powder.
[0009]
On the other hand, the ultrafine particles adhering to the surface of the spheroidized siliceous powder have strong adhesion, and there is a limit to the removal by dry classification. When this treatment is performed in a wet process, there is a problem that a drying process is required in addition to a wet process, which is not economical.
[0010]
In view of the above, an object of the present invention is to provide a method for producing a spherical siliceous powder suitable as a filler for a semiconductor encapsulating material that is excellent in fluidity and moldability even when the filling rate is high.
[0011]
[Means for Solving the Problems]
That is, 0 present invention, when to be spheroidized by ejecting silica mosquitoes powders feedstock during high temperature flame using a burner for injecting a combustible gas and burner air, the combustion aid gas amount with respect to the combustible gas amount of theoretical combustion quantity. 5 or more and less than 1.0 and the particle size distribution of the siliceous powder raw material satisfies the following formulas (A) and (B): D 50 is 20 to 70 μm, 30 μm or more Method for producing spherical siliceous powder having average sphericity of particles having particle diameter of 0.85 or more, specific surface area measured by BET method of 0.2 to 0.8 m 2 / g, and amorphous ratio of 95% or more It is.
(I) (D 75 -D 25) / D 50 ≦ 1.5
Here (b) (D 50/5) μm content of less particles than 15 wt.%, D 75: particle size of which cumulative mass distribution in the particle size distribution of 75%
D 25 : the particle diameter at which the cumulative mass distribution is 25% in the particle size distribution,
D 50 : the particle diameter at which the cumulative mass distribution is 50 % in the particle size distribution,
It is.
[ 0012 ]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described in more detail.
[ 0013 ]
First, to describe the spherical silica powders obtained by the production method of the present invention, the spherical siliceous powder, D 50 is 20 to 70 m, the specific surface area measured by a B ET method 0.2~0.8m 2 / g. A large specific surface area means that the particle size of the ultrafine particles adhering to the particles is small and the number thereof is large. Such ultrafine particles increase the viscosity of the resin composition when the spherical siliceous powder is highly filled, thereby impairing fluidity and moldability. However, the present inventors have found that when the adhesion ratio of such ultrafine particles is too small, there is a problem that the burr becomes long during molding and the working efficiency is lowered. That is, it is preferable that an appropriate amount of ultrafine powder adheres to the surface, and as an index thereof, the specific surface area measured by the BET method should be 0.2 to 0.8 m 2 / g, preferably 0.8. 4 to 0.6 m 2 / g.
[ 0014 ]
However, according to the study by the present inventors, it has been found that the effect of the present invention is small in the method of adding a powder containing a large amount of ultrafine particles having a particle diameter of 0.1 μm or less to a powder having a low specific surface area. ing. According to the considerations of the present inventors, it is difficult to disperse the ultrafine powder uniformly in the resin by the method of adding the ultrafine powder later. That is, the spherical siliceous powder of the present invention is provided with the above-described specific surface area conditions without adding an ultrafine powder.
[ 0015 ]
Moreover, the spherical siliceous powder produced by the present invention has an average sphericity of 0.85 or more of particles having a particle diameter of 30 μm or more. Preferably, the average sphericity of particles having a particle size of less than 75% (D 75 ) cumulative particle size distribution is 0.90 or more, and the average sphericity of particles having a particle size of D 75 or more is 0.80 or more. Generally, if the average sphericity of the spherical siliceous powder is increased, the fluidity tends to be improved. In particular, by setting the average sphericity of coarse particles having a particle diameter of D 75 or more to 0.80 or more, The effect is further enhanced.
[ 0016 ]
The particle size distribution of the spherical siliceous powder is a value based on particle size measurement by a laser diffraction light scattering method, and for example, “Model LS-230” (manufactured by Beckman Coulter, Inc.) is used as the particle size distribution measuring machine. In the measurement, water was used as a solvent, and as a pretreatment, dispersion was performed for 1 minute using a homogenizer with an output of 200 W. Moreover, it adjusted so that a PIDS (Polarization Intensity Differential Scattering) density | concentration might be set to 45-55%. In addition, 1.33 was used for the refractive index of water, and the refractive index of the powder material was taken into consideration for the refractive index of the powder. For example, amorphous silica was measured with a refractive index of 1.50.
[ 0017 ]
The specific surface area is a value based on the BET method, and can be measured using, for example, a specific surface area measuring device “Model 4-SORB U2” (manufactured by Yuasa Ionics).
[ 0018 ]
The sphericity is measured by taking a particle image taken with a stereomicroscope (for example, model SMZ-10 type; manufactured by Nikon Corporation), a scanning electron microscope or the like into an image analyzer (for example, manufactured by Nihon Avionics Co., Ltd.) Thus, it can be measured. That is, the projected area (A) and the perimeter (PM) of particles are measured from a photograph. When the area of a perfect circle corresponding to the perimeter (PM) is (B), the roundness of the particle can be displayed as A / B. Therefore, assuming a perfect circle having the same circumference as the sample particle (PM), PM = 2πr and B = πr 2 , so that B = π × (PM / 2π) 2 , and each particle Can be calculated as sphericity = A / B = A × 4π / (PM) 2 . The roundness of 200 arbitrary particles thus obtained was determined, and the average value was defined as the average sphericity.
[ 0019 ]
As a method for measuring roundness other than the above, the circularity of each particle automatically and quantitatively measured by a particle image analyzer (for example, model FPIA-1000; manufactured by Sysmex Corporation) can be used to calculate the formula, roundness Degree = (circularity) 2 It can also be calculated by conversion.
[ 0020 ]
Furthermore, the amorphous ratio of the spherical siliceous powder produced by the present invention needs to be 95% or more, and particularly preferably 98% or more. If the amorphous ratio is smaller than this, an improvement in thermal conductivity can be expected, but the loss of sacrificing both the low thermal expansion property and the low dielectric property becomes large.
[ 0021 ]
Amorphous ratio is specified by X-ray diffraction analysis of the sample using a powder X-ray diffractometer (for example, Model Mini Flex; manufactured by RIGAKU) in the range of 2θ of CuKα ray of 26 ° to 27.5 °. It can be measured from the intensity ratio of diffraction peaks. For example, in the case of silica, crystalline silica has a main peak at 26.7 °, but in amorphous silica, there is no peak. When amorphous silica and crystalline silica are mixed, those Since the peak height of 26.7 ° corresponding to the ratio can be obtained, the ratio of the X-ray intensity of the sample to the X-ray intensity of the crystalline silica standard sample can be calculated from the mixed ratio of crystalline silica (X-ray diffraction intensity / crystal of the sample). X-ray diffraction intensity) of the crystalline silica is calculated, and the amorphous ratio can be obtained from the formula, amorphous ratio (%) = (1-crystalline silica mixture ratio) × 100.
[ 0022 ]
Features of the method of manufacturing the spherical silica powders of the present invention, the optimization of the particle size distribution of the raw material powder is in the form adjustment of high temperature flames, by the present invention, it is possible to efficiently produce the spherical silica powders.
[ 0023 ]
The first condition of the present invention is that raw material powder is put into a high-temperature flame formed under the condition that the amount of auxiliary combustion gas relative to the amount of combustible gas is 0.5 times or more and less than 1.0 times the theoretical combustion amount. . In addition, the amount of auxiliary combustion gas said here points out what combined the amount of auxiliary combustion gas used for carrier gas of a raw material. The spherical powder obtained by injecting the raw material powder into a high-temperature flame that forms an atmosphere above the melting point contains very fine particles with evaporated components precipitated and solidified, but the amount of auxiliary combustion gas is 1.0 times the amount of combustible gas. If it is set as mentioned above, a flame will become short, the ratio by which the generated vaporization component will be cooled and solidified without growing, generation | occurrence | production of an ultrafine particle will increase, and a specific surface area will exceed 0.8 m < 2 > / g. On the other hand, if the ratio is less than 0.5 times, the amorphous temperature of the spherical siliceous powder is reduced due to a decrease in the flame temperature, and soot generated by incomplete combustion is mixed into the product. A preferable ratio is 0.6 to 0.9 times.
[ 0024 ]
As the combustible gas, one or more of propane, butane, propylene, acetylene, hydrogen and the like are used, and as the auxiliary combustion gas, an oxygen-containing gas such as oxygen gas is used, but is not limited thereto.
[ 0025 ]
The second condition of the present invention is to adjust the particle size distribution of the raw material. If melting of all of the raw material powder in the amount of heat sufficient to melt spheroidizing, particle diameter with respect to D 50 of the raw material powder is too small, agglomeration during melt or other particles and fused to sphericity of the powder It becomes a factor to reduce. In particular, in a flame formed under the condition that the amount of auxiliary combustion gas with respect to the amount of combustible gas is 0.5 times or more and less than 1.0 times the theoretical combustion amount, this tendency becomes remarkable because the flame length is long. Therefore, the present inventors have made many experiments and solved this problem by setting the particle size of the raw material powder as follows.
[ 0026 ]
(I) (D 75 -D 25) / D 50 of 1.5 or less, preferably 1.0 or less.
(Ii) (D 50/5) content of μm or less particles of 15% or less, preferably 10%. This (b) condition means that, for example, in the case of a raw material powder having an average particle diameter D 50 of 30 μm, the content of particles of 6 (30/5) μm or less is 15% or less, preferably 10% or less. you. When deviating from the conditions (b) and (b), the amount of heat for melting coarse particles of 20 μm or more is excessive for the fine powder, so that the fusion of the particles is promoted and a high sphericity powder can be obtained. It made without.
[ 0027 ]
In order to adjust the particle size distribution of the raw material powder, a sieve, an air classifier or the like can be used. However, the fine powder side and the coarse powder side can be removed by performing the classification process two or more times. Then, this method is suitable. In preparing the raw material, it is only necessary to achieve the raw material particle size distribution according to the present invention, and any classification method may be used, and the method may be either wet or dry.
[ 0028 ]
In the present invention, as the raw material powder, relatively high quality silica stone, quartz, silica sand and the like pulverized by means such as a vibration mill or after that classification treatment, and once melted and crushed molten crushed product or spherical Any of the melted spherical product and further a mixture thereof can be used.
[ 0029 ]
As an apparatus for carrying out the present invention, for example, an apparatus in which a collection device is connected to a furnace body equipped with a burner is employed. One example is Japanese Patent Application Laid-Open Nos. 11-57451 and 11-71107. The furnace body may be an open type or a closed type, or a vertical type or a horizontal type. A cyclone, a bag filter, etc. are used for a collection device.
[ 0030 ]
INDUSTRIAL APPLICABILITY The present invention is suitable for a method for producing a spherical siliceous powder with a low content of particles having low sphericity, and when the obtained spherical siliceous powder is used as a filler for a semiconductor encapsulating material, a sealing material is obtained. The high fluidity, high filling property, and high strength can be improved more than ever.
[ 0031 ]
【Example】
Hereinafter, the present invention will be described more specifically with reference to examples and comparative examples.
[ 0032 ]
Examples 1-8 Comparative Examples 1-5
Using a vertical furnace with a burner installed at the top of the furnace and an apparatus (Example 1 of Japanese Patent Laid-Open No. 11-57451) whose lower part is connected to a collection device (bag filter), The classified silica raw material powder is injected into a propane gas (combustible gas) -oxygen (supporting gas) flame (flame temperature: about 2000 ° C.) with a carrier gas (oxygen), and is classified after melting and spheroidizing. Thus, spherical siliceous powders a to l were produced. Furthermore, the powder m was manufactured by dispersing the powder f in water to reduce the ultrafine particles adhering to the surface and then drying.
[ 0033 ]
Table 1 shows the particle size constitution of the silica raw material powder, the ratio of the amount of auxiliary combustion gas to the amount of combustible gas, and the characteristics of the obtained spherical fused silica powder. The silica raw material powder input amount (kg / hr) / propane gas amount (Nm 3 / hr) was set to 3.0.
[ 0034 ]
In order to evaluate the characteristics of the obtained spherical siliceous powders a to m as the filler of the semiconductor sealing material, they were mixed at the ratios shown in Table 2 to adjust the fillers A to M. “FB-6D” and “SFP-30M” are spherical silica powders manufactured by Denki Kagaku Kogyo Co., Ltd., and were blended on the fine powder side in order to obtain a particle size distribution that enhances the filling property to the resin. “FB-6D” has a D 50 of 6 μm and a BET specific surface area of 3 m 2 / g, and “SFP-30M” has a D 50 of 0.7 μm and a specific surface area of 6 m 2 / g. .
[ 0035 ]
Then, 90% filler, 4,4′-bis (2,3-epoxypropoxy) -3,3 ′, 5,5′-tetramethylbiphenyl type epoxy resin 4.2%, phenol resin 4.3%, Add 0.2% triphenylphosphine, 0.5% γ-glycidoxypropyltrimethoxysilane, 0.3% carbon black, 0.5% carnauba wax (the total of these is 100%), Henschel mixer After dry blending, the mixture was heated and kneaded in the same direction meshing twin screw extrusion kneader (screw diameter D = 25 mm, kneading disk length 250 mm, paddle rotation speed 150 rpm, discharge rate 5 kg / h, heater temperature 105 to 110 ° C.). . This was cooled with a cooling press machine and then pulverized to obtain an epoxy resin composition, which was used as a semiconductor sealing material. The fluidity (spiral flow), burr length, and moldability (number of voids) were evaluated as follows. The results are shown in Table 2.
[ 0036 ]
Fluidity (spiral flow)
The spiral flow value of the epoxy resin composition was measured using a transfer molding machine equipped with a spiral flow measurement mold according to EMMI-I-66 (Epoxy Molding Material Institute; Society of Plastic Industry). The transfer molding conditions were a mold temperature of 175 ° C., a molding pressure of 7.4 MPa, and a pressure holding time of 90 seconds.
[ 0037 ]
Using a burr measuring mold having a burr length of 2 μm, 5 μm, 10 μm, and 30 μm, the molding temperature was 175 ° C., and the molding pressure was 7.4 MPa. The values measured at each slit were averaged to obtain the burr length.
[ 0038 ]
Formability (number of voids)
24 semiconductor packages of 160-pin QFP (Quad Flat Package; 28 mm x 28 mm, thickness 3.6 mm, simulated IC chip size 15 mm x 15 mm) were produced using a transfer molding machine, and 0.1 mm or more remaining in the package The number of voids was counted using an ultrasonic flaw detector, and the number of voids per package was calculated. The transfer molding conditions were a mold temperature of 175 ° C., a molding pressure of 7.4 MPa, a pressure holding time of 90 seconds, and the preheat temperature of the epoxy resin composition was 80 ° C.
[ 0039 ]
[Table 1]
[ 0040 ]
[Table 2]
[ 0041 ]
As is clear from the comparison between the examples and comparative examples in Table 1, by adjusting the particle size distribution of the raw material powder and adjusting the flame forming conditions as in the present invention, the spherical surface having a low specific surface area and a high sphericity. A siliceous powder can be obtained. Further, as is clear from the comparison between the examples and comparative examples in Table 2, the filler composed of the spherical siliceous powder obtained by the present invention provides a resin composition with excellent fluidity.
[ 0042 ]
【The invention's effect】
According to the present invention, flowability even at high filling rate, Ru can be manufactured easily suitable spherical silica powders as a semiconductor sealing material filler having excellent moldability. The spherical siliceous powder obtained by the present invention can be used, for example, as a filler of a resin composition, and becomes a resin composition excellent in fluidity and moldability even if the filling rate of the filler is high .
Claims (1)
(イ)(D75−D25)/D50≦1.5
(ロ)(D50/5)μm以下の粒子の含有率が15質量%以下
ここで、D75:粒度分布において累積質量分布が75%となる粒子径、
D25:粒度分布において累積質量分布が25%となる粒子径、
D50:粒度分布において累積質量分布が50%となる粒子径、
である。When a siliceous powder raw material is injected into a high-temperature flame to be spheroidized, a burner that ejects combustible gas and auxiliary combustion gas is used, and the amount of auxiliary combustion gas relative to the amount of combustible gas is 0.5 times the theoretical combustion amount or more, 1.0 is less than doubled, and siliceous powder particle size distribution of the raw material, the following formula (a), characterized in that satisfy the (ii), the average D 50 of 20 to 70 m, the particles having a particle size of at least 30μm A method for producing a spherical siliceous powder having a sphericity of 0.85 or more, a specific surface area measured by the BET method of 0.2 to 0.8 m 2 / g, and an amorphous ratio of 95% or more .
(I) (D 75 -D 25) / D 50 ≦ 1.5
Here (b) (D 50/5) μm content of less particles than 15 wt.%, D 75: particle size of which cumulative mass distribution in the particle size distribution of 75%
D 25 : the particle diameter at which the cumulative mass distribution is 25% in the particle size distribution,
D 50 : the particle diameter at which the cumulative mass distribution is 50 % in the particle size distribution,
It is.
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| JP2009221054A (en) * | 2008-03-17 | 2009-10-01 | Admatechs Co Ltd | Manufacturing method of spheroidized silica |
| JP5426463B2 (en) * | 2010-04-13 | 2014-02-26 | 花王株式会社 | Filler |
| JP5616672B2 (en) * | 2010-04-13 | 2014-10-29 | パナソニックヘルスケア株式会社 | Curable composition and dental cured product |
| JP7112179B2 (en) * | 2016-10-19 | 2022-08-03 | 日鉄ケミカル&マテリアル株式会社 | Spherical siliceous powder for semiconductor encapsulant and method for producing the same |
| US10486973B2 (en) * | 2016-11-18 | 2019-11-26 | Ppg Industries Ohio, Inc. | Silica-based spherical particulates and methods of preparing the same |
| JP6534078B1 (en) * | 2018-02-21 | 2019-06-26 | パナソニックIpマネジメント株式会社 | Method of manufacturing solid electrolyte, solid electrolyte, active material layer, method of forming active material layer, separator layer, method of forming separator layer, and all solid battery |
| JP7478031B2 (en) | 2020-06-02 | 2024-05-02 | 信越化学工業株式会社 | Manufacturing method of low dielectric silica powder |
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