JP3838768B2 - Electrolytic plating method and probe pin manufacturing method using it - Google Patents
Electrolytic plating method and probe pin manufacturing method using it Download PDFInfo
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- JP3838768B2 JP3838768B2 JP35520397A JP35520397A JP3838768B2 JP 3838768 B2 JP3838768 B2 JP 3838768B2 JP 35520397 A JP35520397 A JP 35520397A JP 35520397 A JP35520397 A JP 35520397A JP 3838768 B2 JP3838768 B2 JP 3838768B2
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- 239000000523 sample Substances 0.000 title claims description 78
- 238000000034 method Methods 0.000 title claims description 29
- 238000009713 electroplating Methods 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000463 material Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 description 73
- 239000000243 solution Substances 0.000 description 28
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 17
- 239000000758 substrate Substances 0.000 description 14
- 239000013078 crystal Substances 0.000 description 13
- 239000010931 gold Substances 0.000 description 9
- 229910052763 palladium Inorganic materials 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000000499 gel Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 229920000936 Agarose Polymers 0.000 description 6
- 239000003349 gelling agent Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 125000002843 carboxylic acid group Chemical group 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229920001817 Agar Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000008272 agar Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Measuring Leads Or Probes (AREA)
Description
【0001】
【発明の属する技術分野】
本発明は、いろいろな産業分野で用いられる電解メッキ法に関するもので、特に、半導体計測用プローブピン、或いはSTM(走査型トンネル顕微鏡)、AFM(原子間力顕微鏡)等の微小顕微鏡用の探針、更に、電子顕微鏡用カソード用針状電極等の先端が尖った形状を有するものを被着材とし、該被着材の先端部等の微小領域に精度高く電解メッキする方法に関する。また、本発明は、前記半導体計測用プローブピンの製造方法に関する。
【0002】
【従来の技術】
半導体集積回路等の製造工程においては、一般に半導体ウエハーに多数のチップが形成された段階で、各チップの電気的特性を測定し、動作特性の良否判定を行う。この測定には、多数のプローブピンが被検査体の電極形状に応じて植設されているプローブカードを用いる。
【0003】
プローブカードのプローブピンについては、半導体素子の急速な微細化にともないピン数の増大と微細化が進んでおり、従来のタングステンピンをくの字に曲げて1本づつ基板に搭載するプローブカードには限界がきており、シリコン基板上に気−液−固相法(VLS法)にて微細なシリコン等の棒状単結晶を略垂直に成長させ、該棒状単結晶に導電性を付与するためのメタライズを施してプローブピンとすることが考案され(特開平5-198638号公報、特開平5-218156号公報)、注目されている。
【0004】
棒状単結晶をプローブピンとするために、棒状単結晶のメタライズは、一般に、無電解ニッケルを施した後、電解金メッキされる。金は、軟らかく、電気抵抗も小さいため、また耐食性に富むことから、微細な棒状単結晶のメタライズ金属として好適ではあるが、被検査体である金やアルミニウムの電極に接触させる(以下、プロービングという)ときに、プロービング回数の増加とともにプローブピン先端部の金メッキ層が変形し、ついには棒状単結晶のシリコンが露出してしまうという現象を生じ、プロービング時の耐久性が悪いという問題がある。
【0005】
本発明者らは、耐久性を向上するべく検討を行い、プローブピンの先端部のみを接点材料で被覆する技術を発明し出願している(特願平8−190417号明細書)。プローブピンの先端部のみに接点材料を設ける方法としては、例えば、接点材料を成膜しない部分をレジスト等でマスキングし、その上でメッキ法、蒸着法、スパッタリング法等のいろいろな成膜法で接点材料を被覆し、しかる後にマスキング材を除去すればよいが、マスキング材を用いずにメッキする方法が容易であり、好ましい方法である。
【0006】
【発明が解決しようとする課題】
本発明者らは、上記メッキ法で先端部に接点材料を設けたプローブピンについてその特性を評価したところ、時として、プロービングに際して電極への接触不十分なプローブピンが一部に存在することがあること、或いはピン折れを発生するものがある等の問題があることが判った。本発明者らはこれらの原因について鋭意検討し、接点材料が、プローブピンの先端部の所望の部分に、精度良く、均一な厚みで、プローブピン間でもばらつきなく設けるときに、前記問題が解決されるという知見を得て本発明に至ったものである。
【0007】
即ち、プローブカード用のプローブピンは、その用途上の制限からピン自体の直径が10〜150μmで、しかも30〜100μmのピッチでピンが並んだ部分を構成するために、メッキ液に浸漬した際に、おのおののプローブピンへのメッキ液の浸漬状況が均一と成り難いこと、また浸漬状況が略均一であっても、メッキ液濃度の不均一、表面状況の不均一等の理由により、プローブピン同士を比較したときに均一なメッキをすることが容易でない。つまり、従来から用いられているメッキ液は、電解する金属塩やキレート剤、PH緩衝剤などを含む水溶液であり、このような水溶液のメッキ液を用いマスキング材なしでプローブピンの先端のみをメッキしようとしても、プローブピン側面を這い上がるメッキ液量がプローブピンの直径、或いはピッチの粗密状態で大きく異なり、所望とする領域に、均一な厚さで、プローブピン毎のバラツキを少なくメッキすることができなかった。
【0008】
プローブピンの先端部に接点材料をメッキする方法として、本発明者らが特願平8−190417号明細書に開示したとおりに、毛筆にメッキ液をしみこませ、該毛筆に電極を付し、プローブピン自体を他の電極として、該プローブピンの先端に接触させて、電解メッキする方法がある。この方法によれば、メッキ液滴にプローブピン先端を顕微鏡等で観察しながら接触させることができ、上記問題をある程度解決することができる。しかし、200〜1000本数もの膨大な数のプローブピンの先端部の所定の部分に、所定厚みで、プローブピン毎のバラツキなくメッキをすることは容易でなく、また多大な労務を必要とし、その結果、プローブカードが高価となる問題がある。
【0009】
本発明は、上記の事情に鑑みてなされたものであり、その目的は、均一な厚さのメッキ層を所定の領域に精度良く被着させるメッキ方法を提供することにあり、特に、半導体計測用プローブカードに用いるプローブピンの先端部に、プローブピン毎のバラツキなくメッキを施し、電極への接触不良や折れといった問題を生じないプローブピンを安価に製造する方法を提供することにある。
【0010】
【課題を解決するための手段】
本発明は、針状物体の先端部に接点材料を、ゲル状のメッキ浴を用いて、被着させることを特徴とする電解メッキ法である。
【0012】
また、本発明は、先端部に接点材料を設けている半導体計測用プローブピンの製造方法であって、前記の電解メッキ法により、接点材料を先端部に被着することを特徴とするプローブピンの製造方法である。
【0013】
【発明の実施の形態】
以下、本発明を詳細に説明する。
本発明者らは、上記問題解決を図るためにいろいろ検討し、メッキ液の針状被着体への這い上がる現象を発生しないように、或いは発生してもその程度を低下するようにして、プローブピン毎の直径や表面状態等のバラツキ等により、プローブピン間のメッキ条件のバラツキが生じないようにすればよいこと、その具体的方法としては、メッキ液表面に被着体と濡れ性が悪い非水溶性の有機物質を設ける方法、或いは表面張力が極端に小さい非水溶性メッキ液を用いる方法等が挙げられるが、本発明者らはメッキ液をゲル状にすること、即ちメッキ液の流動性を低下しゲル状のメッキ浴とすることにより、前記目的を具体的に達成することができることを見出し、本発明に至ったものである。
【0014】
本発明のゲル状のメッキ浴とは、従来公知のメッキ液と同様の機能を有する液体を流動性がない固形状としたものをいい、例えば、プローブピン等の固体が表面に当てられた時には容易に変形する程度の柔らかさの状態であり、また、メッキ液としての機能を達成するために、少なくとも電解される金属を含有し、電解メッキの条件下において導電性を有するものである。
【0015】
本発明のゲル状のメッキ浴は、従来公知のメッキ液にゲル化剤を添加することで容易に得ることができる。この場合、ゲル化剤としては、カルボン酸基を有する高分子化合物、非イオン性の高分子化合物等従来公知のゲル化剤を用いることができる。しかし、カルボン酸基を有する高分子化合物は、金属イオンが架橋剤として作用するので、均一なゲルを作製し難いのが一般的で、メッキ時の温度が高く、時間が長い場合にゲルの表面が乾燥してくる問題があるが、短時間のメッキには用いることができる。一方、非イオン性の高分子化合物は、メッキ液中のイオンなどの影響を受けにくく、上記の制限がないので、好ましい。
【0016】
非イオン性の高分子化合物のうち、澱粉は、メッキ液に分散して加熱すると容易にゲル化し、しかも高温でも安定にゲル状を保つ性質を有するので、50℃程度までの加熱型電解メッキに適したゲル化剤である。また、アガロース(寒天)は、微量でメッキ液をゲル化する一方、高温でゾル化するために、メッキ処理後に容易に洗浄することができるという特徴を有し、生産上好都合である。更に、アガロースは、0.5重量%以上をメッキ液に添加、加熱溶解、冷却することにより良好な室温下でメッキ可能なゲル状のメッキ液ができ、曳糸性がないなど優れた特性を有している。
【0017】
前記ゲル化剤のメッキ液へ添加量については、メッキ浴全量の0.5〜5%重量%をメッキ液に添加してもメッキには何等支障はない。5重量%を越える添加量は、メッキ浴を作製する際にメッキ浴中に気泡が巻き込まれたり、或いはそれを用いてメッキする際の作業性が低下することがある。0.5〜2重量%が最も好ましい範囲である。
【0018】
本発明においては、前記したとおりに、従来公知のメッキ液を用いることができ、例えば、パラジウムメッキではパラデックス91GV、パラデックス110、パラデックスHS、パラデックス91、パラデックスMS、パラデックスVIII、パラデックス・ストライク、デコレックス(いずれも田中貴金属社製)、白金メッキではプラタネクス31S(田中貴金属社製)、ニッケルメッキではTSP−48ニッケル(奥野製薬製)等があげられる。
【0019】
本発明において、本発明の目的を達成するために接点材料であることが好ましい。本発明でいう接点材料とは、プローブピンを実使用する際に溶着や接点部の移動が少なく、耐食性に富み、数十万回のプロービングでも消耗が少ない、耐久性に優れる金属であり、例えばPd、Ir、Rh、Ni等の金属や、PdにAg、Cu、Pt、Au等の金属を添加したPd合金、AgにSn、In、Zn、Cu等の酸化物を添加したAg合金等が挙げられる。これらのうち、Pdは容易にメッキができ、しかも耐久性に優れることから好ましい。
【0020】
本発明のメッキ浴は、ゲル状であるので、あたかも従来の電極の一部を形成しているかの如くに取り扱うことができるという格別な効果を有する。例えば、アクリル板等の樹脂をくり貫いて四方を囲った容器内部に金属電極板をセットし、片隅に小孔を開けたアクリル板で蓋をしてクリップなどで固定し、ゲル化剤を添加したメッキ液を加熱溶解して、小孔から注入し、室温に放置冷却し、後に蓋を外すことで、表面が鏡面状のゲル状メッキ浴を得ることができる。また、例えば、ゲル状のメッキ浴をナイフ等で円錐状に切り出し、線状電極の先端に付着させることで、被着材の微小な所定位置のみをメッキすることもできる。
【0021】
本発明のメッキ浴を用いれば流動しない鏡面を容易に得ることができ、これを利用して、棒状或いは針状被着材の先端部を該メッキ浴中に挿入することで、寸法精度高くメッキをすることができる。特に、複数の棒状或いは針状被着材について本発明を適用するとき、従来のメッキ液で発生していたメッキ液の被着材表面への這い上がり現象がないので、被着材毎のばらつきを小さく制御できるという特徴を有する。
【0022】
本発明は、先端部に接点材料を設けている半導体計測用プローブピンの製造方法であって、前記の電解メッキ法により、接点材料を先端部に被着することを特徴とするプローブピンの製造方法である。半導体計測用プローブピンの製造方法としては、例えば、シリコン等の単結晶基板上に、該基板と略垂直方向にVLS法にて針状単結晶を成長させ、針状単結晶を導電化する方法がある。本発明では、前記の導電化された針状単結晶の先端部に、前述のゲル状のメッキ浴を用いて接点材料をメッキする。
【0023】
接点材料のメッキする領域、即ち針状物体の先端部に関しては、用途、目的に応じて選択すれば良く制限する必要はないが、プローブピンの場合には、プロービング時に発生するプローブピン自体の撓みの少ない部分であることが好ましく、一般的には、プローブピン全体の長さが1600μmの場合最先端から300μm程度である。好ましい範囲としては、プローブピンの先端から、少ない場合がプローブピンの先端から20μmまでを覆い、多い場合にはプローブピンの先端から200μmまでを覆うことが好ましい。
【0024】
以下、実施例に基づき、本発明を更に詳細に説明する。
【0025】
【実施例】
<プローブピンの作製>
SOIウエハーの表面の所望の位置をマスクし、絶縁層までエッチングすることで、所望形状の電極ラインを作成した。次に、電極ラインの所定の位置にAuバンプを作成し、その位置にSiの針状単結晶をVLS法にて形成させ、更に針状単結晶の先端部分を研磨して、所定の長さに揃えた。次に、針状単結晶と電極ラインの表面に無電解メッキによりNi層を0.1μmの厚みで設けた後、更にAu膜をその上に電解メッキ法で2μmの厚みで成膜し、複数のプローブピンを有する基板を得た。以上の操作の結果、この基板に設けられたプローブピンは、長さ1.4mmで、該プローブピン先端が同一平面内にあり、コの字状の列に群生し、各列は50μmピッチに360本、120μmピッチに80本、80μmピッチに20本設けられている。
【0026】
前記プローブピンを有する基板を用い、以下の実施例並びに比較例を行った。
【0027】
〔実施例〕
<鏡面を有するゲル状メッキ液の作製>
銅板に金メッキした電極板上に、中央部をくり貫いた厚さ5mmのアクリル板を瞬間接着剤で固定して、容器状とした。次に、厚さ1.5mmのアクリル板に小孔を開け、小孔が容器の端部になるようにした蓋をセットし、クリップ止めした。
【0028】
パラジウムメッキ液(田中貴金属社製:パラデックス110)10gをガラスビーカーに秤量し、アガロース(和光純薬製:精製アガロース)0.08gを秤量して添加し、95゜Cに加熱してアガロースを溶解した。約70゜Cまで冷却してから、スポイトで上記の容器の小孔から注入した。室温23゜Cに約10分放置後、蓋を外すことで、鏡面を有するゲル状のパラジウムメッキ浴を作製した。
【0029】
<プローブピン先端部への電解メッキ>
前記のパラジウムメッキ浴と、前記基板とを、鏡面と基板のプローブピンとが相対し、しかもプローブピンが微小移動ができ、前記移動の様子を顕微鏡観察下で制御できる装置にセットした。この装置を用い、前記基板のプローブピンの先端部を先端より50μmまでの領域を、ゲル状メッキ浴の中に浸し、1ピン当たり0.5μAの電流で90秒間電解メッキした。
【0030】
前記のメッキ操作終了後、ゲル状メッキ浴からプローブピンを抜き、約95℃の温水で洗浄、リンスした。この基板のプローブピンについて、SEMにより、先端部の形状を観察した。この結果、いずれのプローブピンも、その先端から約50μmの領域が厚さ1.8μmの厚みでパラジウムメッキが形成されていた。前記の先端から50μm領域のバラツキについては、±2μmであった。
【0031】
更に、この基板を用いて、オーバードライブ量を40μmで、サイクルタイム175msec、コンタクト時間125msecの条件で、100万回のプロービング試験を行ったが、いずれのプローブピンについても先端不良やプローブピン自体の折れなどの不良は発生しなかった。
【0032】
〔比較例〕
アガロースを用いることなく、従ってメッキ液がゲル状でないことを除いては、実施例と同じ操作をして、前記基板のプローブピンの先端部にパラジウムを電解メッキしたところ、プローブピン表面に沿ってメッキ液が這い上がる現象が認められた。尚、先端からのメッキ距離(メッキ液の這い上がり距離)は列をなしているプローブピン群の両端部にあるプローブピンで最も短く、中央部が長い滑らかな台形状であり、またピッチが小さいプローブピン列で端部と中央部の差が最も大きかった。
【0033】
ここで得られた基板のプローブピンについて、SEM観察の結果では、パラジウムメッキ皮膜の厚さはプローブピン先端からメッキされている長さが長いもので薄く、プローブピン先端からメッキされている長さが短いものでは厚く、マッチ棒状を示していた。また、100万回のプロービング試験の結果、マッチ棒状ピンの永久変形が大きく、プローブピン自体の折れに至ったものが2本あった。また、メッキ厚みの薄いピンでは、内部のシリコン単結晶先端が露出しているものも認められた。
【0034】
【発明の効果】
本発明は、ゲル状のメッキ浴を用いているので、従来から問題であった、針状物体の先端部等のメッキ液の被着材表面への這い上がり等に原因して、微妙なメッキ領域の制御ができないということが解決でき、産業上有用である。
【0035】
本発明によればSTM用短針などの微細な針状或いは棒状物体の先端部に制御された条件でメッキを施すことができるし、また、被着材の非常に限定された領域のみメッキすることができるので、その工業的価値は高いものである。
【0036】
また、本発明によれば、半導体計測用プローブカードのプローブピンの先端部に制御性よく接点材料のメッキを施すことができるという効果が得られ、プロービング耐久性に優れるプローブピンを有するプローブカードが安定して、安価に提供できる。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electrolytic plating method used in various industrial fields, and in particular, a probe pin for semiconductor measurement, or a probe for a micro microscope such as STM (scanning tunneling microscope) or AFM (atomic force microscope). Furthermore, the present invention relates to a method for performing electroplating with high accuracy on a minute region such as the tip of the adherend using an electrode having a sharp tip such as a needle electrode for a cathode for an electron microscope. The present invention also relates to a method for manufacturing the semiconductor measurement probe pin.
[0002]
[Prior art]
In the manufacturing process of a semiconductor integrated circuit or the like, generally, when a large number of chips are formed on a semiconductor wafer, the electrical characteristics of each chip are measured to determine whether the operating characteristics are good or bad. For this measurement, a probe card in which a large number of probe pins are implanted according to the electrode shape of the object to be inspected is used.
[0003]
As for the probe pins of the probe card, the number of pins has been increased and miniaturized along with the rapid miniaturization of semiconductor elements, and a conventional probe card is mounted on a substrate by bending a tungsten pin into a square shape. Has reached its limit, and a rod-shaped single crystal such as fine silicon is grown substantially vertically on a silicon substrate by a gas-liquid-solid phase method (VLS method), and conductivity is imparted to the rod-shaped single crystal. It has been devised that a metallized probe pin is used (JP-A-5-198638, JP-A-5-218156) and has been attracting attention.
[0004]
In order to use the rod-shaped single crystal as a probe pin, the metallization of the rod-shaped single crystal is generally electrolytic gold plated after applying electroless nickel. Gold is soft, has low electrical resistance, and is excellent in corrosion resistance. Therefore, gold is suitable as a metal rod metal of a fine rod-like single crystal, but is brought into contact with gold or aluminum electrodes (hereinafter referred to as probing). ) When the probing frequency is increased, the gold plating layer at the tip of the probe pin is deformed, and finally a rod-shaped single crystal silicon is exposed, and there is a problem that durability during probing is poor.
[0005]
The present inventors have studied to improve the durability, and invented and filed a technique for coating only the tip portion of the probe pin with a contact material (Japanese Patent Application No. 8-190417). As a method of providing the contact material only at the tip of the probe pin, for example, a portion where the contact material is not formed is masked with a resist or the like, and then a variety of film formation methods such as plating, vapor deposition, and sputtering are used. The contact material may be coated and then the masking material may be removed, but the plating method without using the masking material is easy and is a preferred method.
[0006]
[Problems to be solved by the invention]
The present inventors evaluated the characteristics of the probe pin provided with a contact material at the tip by the above plating method. Sometimes, there are probe pins that are insufficiently in contact with the electrode during probing. It has been found that there are problems such as that there are things that cause pin breakage. The present inventors have studied diligently about these causes and solved the above problem when the contact material is provided at a desired portion of the tip portion of the probe pin with high accuracy, uniform thickness and no variation between the probe pins. The present invention has been obtained with the knowledge that the
[0007]
That is, when a probe pin for a probe card is immersed in a plating solution in order to constitute a portion where the pin itself has a diameter of 10 to 150 μm and a pitch of 30 to 100 μm due to restrictions in use, In addition, the probe pin is difficult to be uniformly immersed in each probe pin, and even if the immersion state is substantially uniform, the probe pin concentration is uneven and the surface condition is not uniform. When comparing each other, it is not easy to perform uniform plating. In other words, the plating solution used conventionally is an aqueous solution containing a metal salt to be electrolyzed, a chelating agent, a PH buffer, and the like, and only the tip of the probe pin is plated without using a masking material using such an aqueous plating solution. Even if you try to do this, the amount of plating solution that crawls up the side of the probe pin will vary greatly depending on the probe pin diameter or pitch density, and the desired area should be plated with uniform thickness and less variation from probe pin to probe pin. I could not.
[0008]
As a method of plating the contact material on the tip of the probe pin, as disclosed in the specification of Japanese Patent Application No. 8-190417, the present inventors impregnate a brush with a plating solution, attach an electrode to the brush, There is a method in which the probe pin itself is used as another electrode to be brought into contact with the tip of the probe pin and subjected to electrolytic plating. According to this method, the tip of the probe pin can be brought into contact with the plating droplet while observing with a microscope or the like, and the above problem can be solved to some extent. However, it is not easy to plate a predetermined portion of the tip of a huge number of probe pins of 200 to 1000 with a predetermined thickness without variation for each probe pin, and requires a lot of labor. As a result, there is a problem that the probe card becomes expensive.
[0009]
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a plating method for accurately depositing a plating layer having a uniform thickness on a predetermined region. It is an object of the present invention to provide a method for producing a probe pin at a low cost by plating the tip of a probe pin used for a probe card without variation for each probe pin and causing no problems such as contact failure or breakage to an electrode.
[0010]
[Means for Solving the Problems]
The present invention is an electrolytic plating method characterized in that a contact material is deposited on the tip of a needle-like object using a gel-like plating bath.
[0012]
The present invention also relates to a method of manufacturing a probe pin for semiconductor measurement, in which a contact material is provided at the tip, wherein the contact material is deposited on the tip by the electrolytic plating method. It is a manufacturing method.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described in detail.
In order to solve the above problems, the present inventors have studied variously, so as not to cause a phenomenon that the plating solution crawls on the needle-shaped adherend, or even if it occurs, the degree thereof is reduced, It is only necessary to prevent variations in the plating conditions between the probe pins due to variations in the diameter and surface condition of each probe pin. As a specific method, the surface of the plating solution and the wettability are not affected. Examples include a method of providing a bad water-insoluble organic substance, or a method of using a water-insoluble plating solution having extremely small surface tension. The present inventors have found that the above-described object can be specifically achieved by reducing the fluidity and forming a gel-like plating bath, and have reached the present invention.
[0014]
The gel-like plating bath of the present invention refers to a liquid that has the same function as a conventionally known plating solution and has a non-flowable solid state. For example, when a solid such as a probe pin is applied to the surface. It is soft enough to be easily deformed, and contains at least a metal to be electrolyzed in order to achieve its function as a plating solution, and has conductivity under the conditions of electrolytic plating.
[0015]
The gel-like plating bath of the present invention can be easily obtained by adding a gelling agent to a conventionally known plating solution. In this case, conventionally known gelling agents such as a polymer compound having a carboxylic acid group and a nonionic polymer compound can be used as the gelling agent. However, the polymer compound having a carboxylic acid group generally has a difficulty in producing a uniform gel because the metal ion acts as a cross-linking agent. When the temperature during plating is high and the time is long, the surface of the gel However, it can be used for short-time plating. On the other hand, nonionic polymer compounds are preferred because they are not easily affected by ions in the plating solution and do not have the above-mentioned limitations.
[0016]
Among non-ionic polymer compounds, starch easily gels when dispersed in a plating solution and is heated, and also has a property of maintaining a stable gel state even at high temperatures. A suitable gelling agent. In addition, agarose (agar) has a feature that it can be easily washed after plating because it forms a sol at a high temperature while gelling the plating solution in a very small amount. Furthermore, agarose has excellent properties such as adding 0.5% by weight or more to the plating solution, heat-dissolving, and cooling to form a gel-like plating solution that can be plated at room temperature and has no stringiness. Have.
[0017]
Regarding the amount of the gelling agent added to the plating solution, there is no problem in plating even if 0.5 to 5% by weight of the total amount of the plating bath is added to the plating solution. When the addition amount exceeds 5% by weight, air bubbles may be involved in the plating bath when preparing the plating bath, or workability when plating using the plating bath may be reduced. 0.5-2% by weight is the most preferred range.
[0018]
In the present invention, as described above, a conventionally known plating solution can be used. For example, in palladium plating, Paradex 91GV, Paradex 110, Paradex HS, Paradex 91, Paradex MS, Paradex VIII, Paradex Strike, Decorex (all manufactured by Tanaka Kikinzoku), Platanex 31S (manufactured by Tanaka Kikinzoku) for platinum plating, and TSP-48 nickel (manufactured by Okuno Seiyaku) for nickel plating.
[0019]
In the present invention, a contact material is preferable to achieve the object of the present invention. The contact material referred to in the present invention is a metal having excellent durability, with little welding and movement of the contact portion when actually using the probe pin, excellent corrosion resistance, low consumption even in probing several hundred thousand times, for example, Metals such as Pd, Ir, Rh, and Ni, Pd alloys obtained by adding metals such as Ag, Cu, Pt, and Au to Pd, Ag alloys obtained by adding oxides such as Sn, In, Zn, and Cu to Ag, etc. Can be mentioned. Of these, Pd is preferable because it can be easily plated and has excellent durability.
[0020]
Since the plating bath of the present invention is in a gel form, it has a special effect that it can be handled as if part of a conventional electrode is formed. For example, a metal electrode plate is set inside a container encircling all sides of a resin such as an acrylic plate, covered with an acrylic plate with a small hole in one corner, fixed with a clip, and a gelling agent is added. The obtained plating solution is heated and dissolved, poured from a small hole, allowed to cool to room temperature, and then the lid is removed to obtain a gel-like plating bath having a mirror-like surface. Further, for example, by cutting a gel-like plating bath into a conical shape with a knife or the like and attaching it to the tip of the linear electrode, it is possible to plate only a minute predetermined position of the adherend.
[0021]
By using the plating bath of the present invention, it is possible to easily obtain a mirror surface that does not flow, and by using this, the tip of a rod-like or needle-like adherend is inserted into the plating bath, thereby plating with high dimensional accuracy. Can do. In particular, when the present invention is applied to a plurality of rod-like or needle-like adherends, there is no creeping phenomenon on the adherend surface of the plating solution that has occurred in the conventional plating solution. It can be controlled to be small.
[0022]
The present invention relates to a method of manufacturing a probe pin for semiconductor measurement in which a contact material is provided at the tip, and the probe material is manufactured by applying the contact material to the tip by the electrolytic plating method described above. Is the method. As a method for manufacturing a probe pin for semiconductor measurement, for example, a method of growing a needle-like single crystal on a single-crystal substrate such as silicon by a VLS method in a direction substantially perpendicular to the substrate, and making the needle-like single crystal conductive There is. In the present invention, the contact material is plated on the tip of the conductive needle-like single crystal using the gel-like plating bath.
[0023]
The area where the contact material is plated, that is, the tip of the needle-like object, need not be limited as long as it is selected depending on the application and purpose, but in the case of a probe pin, the bending of the probe pin itself that occurs during probing In general, when the entire length of the probe pin is 1600 μm, it is about 300 μm from the forefront. As a preferable range, it is preferable to cover from the tip of the probe pin up to 20 μm from the tip of the probe pin when it is small, and to cover up to 200 μm from the tip of the probe pin when there are many.
[0024]
Hereinafter, based on an Example, this invention is demonstrated still in detail.
[0025]
【Example】
<Production of probe pin>
Masking a desired position on the surface of the SOI wafer and etching the insulating layer, an electrode line having a desired shape was created. Next, an Au bump is formed at a predetermined position of the electrode line, a Si needle-shaped single crystal is formed at that position by the VLS method, and the tip of the needle-shaped single crystal is polished to a predetermined length. Aligned. Next, after providing a Ni layer with a thickness of 0.1 μm by electroless plating on the surface of the needle-like single crystal and the electrode line, an Au film is further formed thereon with a thickness of 2 μm by an electrolytic plating method. A substrate having the probe pins was obtained. As a result of the above operation, the probe pins provided on this substrate have a length of 1.4 mm, the tips of the probe pins are in the same plane, clustered in U-shaped rows, and each row has a pitch of 50 μm. 360, 80 at 120 μm pitch and 20 at 80 μm pitch.
[0026]
The following examples and comparative examples were performed using the substrate having the probe pins.
[0027]
〔Example〕
<Production of gel-like plating solution having a mirror surface>
An acrylic plate having a thickness of 5 mm cut through the center portion was fixed with an instantaneous adhesive on an electrode plate plated with gold on a copper plate to form a container. Next, a small hole was made in an acrylic plate having a thickness of 1.5 mm, and a lid was set so that the small hole became an end of the container, and clipped.
[0028]
10 g of palladium plating solution (Tanaka Kikinzoku Co., Ltd .: Paradex 110) is weighed in a glass beaker, 0.08 g of agarose (manufactured by Wako Pure Chemicals: purified agarose) is weighed and added, and heated to 95 ° C to agarose. Dissolved. After cooling to about 70 ° C., it was injected from the small hole of the container with a dropper. After leaving at room temperature of 23 ° C. for about 10 minutes, the lid was removed to prepare a gelled palladium plating bath having a mirror surface.
[0029]
<Electrolytic plating on tip of probe pin>
The palladium plating bath and the substrate were set in an apparatus in which the mirror surface and the probe pin of the substrate face each other, and the probe pin can be moved minutely, and the movement state can be controlled under microscope observation. Using this apparatus, the tip of the probe pin on the substrate was immersed in a gel plating bath in a region from the tip to 50 μm and electroplated for 90 seconds at a current of 0.5 μA per pin.
[0030]
After completion of the plating operation, the probe pin was removed from the gel plating bath, washed with hot water at about 95 ° C., and rinsed. About the probe pin of this board | substrate, the shape of the front-end | tip part was observed by SEM. As a result, in each probe pin, palladium plating was formed with a thickness of 1.8 μm in an area of about 50 μm from the tip. The variation in the 50 μm region from the tip was ± 2 μm.
[0031]
Furthermore, using this substrate, a probing test was performed 1 million times under the conditions of an overdrive amount of 40 μm, a cycle time of 175 msec, and a contact time of 125 msec. Defects such as breakage did not occur.
[0032]
[Comparative Example]
Except that agarose is not used, and therefore the plating solution is not gelled, the same operation as in the example was carried out, and the tip of the probe pin on the substrate was electroplated with palladium. A phenomenon that the plating solution crawls up was observed. Note that the plating distance from the tip (the creeping distance of the plating solution) is the shortest of the probe pins at both ends of the group of probe pins in a row, has a smooth trapezoidal shape with a long center, and has a small pitch. The difference between the end and the center of the probe pin array was the largest.
[0033]
As a result of SEM observation of the probe pins of the substrate obtained here, the thickness of the palladium plating film is thin with a long length plated from the probe pin tip, and the length plated from the probe pin tip is thin. The short one was thick and showed a matchstick shape. In addition, as a result of probing tests of 1 million times, there were two cases in which the match rod-shaped pin was permanently deformed and the probe pin itself was broken. In addition, in the pin having a thin plating thickness, the tip of the silicon single crystal inside was exposed.
[0034]
【The invention's effect】
Since the present invention uses a gel-like plating bath, it has been a problem in the past due to the crawl-up of the plating solution on the surface of the adherend such as the tip of a needle-like object. It is possible to solve the problem that the area cannot be controlled, which is industrially useful.
[0035]
According to the present invention, plating can be applied to the tip of a fine needle-like or rod-like object such as an STM short needle under controlled conditions, and only a very limited area of the adherend is plated. Therefore, its industrial value is high.
[0036]
Further, according to the present invention, there is obtained an effect that the tip of the probe pin of the semiconductor measurement probe card can be plated with a contact material with good controllability, and a probe card having a probe pin with excellent probing durability is provided. It can be provided stably and inexpensively.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35520397A JP3838768B2 (en) | 1997-12-24 | 1997-12-24 | Electrolytic plating method and probe pin manufacturing method using it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35520397A JP3838768B2 (en) | 1997-12-24 | 1997-12-24 | Electrolytic plating method and probe pin manufacturing method using it |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11189892A JPH11189892A (en) | 1999-07-13 |
| JP3838768B2 true JP3838768B2 (en) | 2006-10-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35520397A Expired - Fee Related JP3838768B2 (en) | 1997-12-24 | 1997-12-24 | Electrolytic plating method and probe pin manufacturing method using it |
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| JP (1) | JP3838768B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002318248A (en) * | 2001-04-20 | 2002-10-31 | Kanai Hiroaki | Probe pin for probe card |
| WO2012073501A1 (en) * | 2010-12-01 | 2012-06-07 | マルイ鍍金工業株式会社 | Electrolytic solution, electrolysis case, electropolishing system, and electropolishing method using these |
| JP6310642B2 (en) * | 2013-05-02 | 2018-04-11 | 株式会社名城ナノカーボン | Method for manufacturing needle-like member with plating formed on tip |
| KR101632619B1 (en) * | 2014-11-11 | 2016-06-23 | 한국기계연구원 | A Probe Pin and a Manufacturing Method of the same |
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| JPH11189892A (en) | 1999-07-13 |
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