JP3867425B2 - GaN phosphor manufacturing method - Google Patents
GaN phosphor manufacturing method Download PDFInfo
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- JP3867425B2 JP3867425B2 JP37353998A JP37353998A JP3867425B2 JP 3867425 B2 JP3867425 B2 JP 3867425B2 JP 37353998 A JP37353998 A JP 37353998A JP 37353998 A JP37353998 A JP 37353998A JP 3867425 B2 JP3867425 B2 JP 3867425B2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000002994 raw material Substances 0.000 claims description 21
- 238000010304 firing Methods 0.000 claims description 18
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 30
- 239000000463 material Substances 0.000 description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 238000000354 decomposition reaction Methods 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005121 nitriding Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000001603 reducing effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- -1 GaN Chemical class 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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Description
【０００１】
【発明の属する技術分野】
本発明は、Ｇａ1-x Ｉｎx Ｎ：Ａ，Ｂ（０≦ｘ＜１、Ａ＝Ｚｎ，Ｍｇ，Ｂ＝Ｓｉ，Ｇｅ）蛍光体の製造方法に関する。
【０００２】
【従来の技術】
近年、ＧａＮは、単結晶の場合にはＬＥＤ、ＬＤ等の発光素子において青色、緑色の高輝度発光を示す材料として知られている。また、一般式Ｇａ1-x Ｉｎx Ｎ：Ａ，Ｂ（０≦ｘ＜１、Ａ＝Ｚｎ，Ｍｇ，Ｂ＝Ｓｉ，Ｇｅ）で表される場合には、青色から赤色までの広い範囲での発光が可能である。
【０００３】
従来、ＧａＮ蛍光体を製造するには、原料物質であるＧａ化合物にドープ物質の化合物を混合し、これを焼成炉内に配置してアンモニアを流しながら高温で焼成し、Ｇａを窒化させるとともにドープ物質をドープさせる。
【０００４】
このようにして得られた材料を電子線で発光させる試みは過去にあるが、粉体状にした蛍光体については実用的な輝度を得るに至っていない。
【０００５】
【発明が解決しようとする課題】
輝度が得られない最大の理由として、他の蛍光体材料と異なり窒化の困難さが挙げられる。すなわち、この材料は窒化される温度（７００℃〜１０００℃）と分解が始まる温度（９５０℃以上）の差が小さいため、通常の加熱による反応では窒化と分解が同時に進行しやすい。このため、ＧａＮはできるが、蛍光体として使用できる程に結晶性が高いＧａＮを作ることはできなかった。
【０００６】
ＧａＮのような窒化物を得るには、一般的には原料物質であるＧａ化合物をアンモニアを用いた雰囲気中において高温で焼成して窒化するが、この際、アンモニアの分解によって生成した水素には強力な還元作用がともなう。ＧａＮの結晶性を向上させるために焼成温度を上げると、この還元作用によりＧａＮが還元されて分解し、Ｇａが遊離して蛍光体の体色が黒色する現象が発生してしまう。この体色の黒化は、蛍光体にとっては自らの発光を吸収して輝度を低下させる現象であるから、致命的な問題である。
【０００７】
本発明は、結晶性を向上させるために高温で焼成しても体色が黒化しないＧａＮ系蛍光体の製造方法を提供することを目的としている。
【０００８】
【課題を解決するための手段】
請求項１に記載されたＧａＮ蛍光体の製造方法は、Ｇａ1-x Ｉｎx Ｎ：Ａ（０≦ｘ＜１、Ａ＝Ｚｎ，Ｍｇ）で表されるＧａＮ蛍光体の製造方法において、Ｓを含むガスとＯを含むガスから構成される群から選択されたガスを、ＮＨ3 ガスに添加した雰囲気中で、前記ＧａＮ蛍光体の原料物質を焼成することを特徴としている。
【０００９】
請求項２に記載されたＧａＮ蛍光体の製造方法は、請求項１記載のＧａＮ蛍光体の製造方法において、Ｓを含むガスが、Ｈ2 ＳとＳＯ2 からなる群から選択されたことを特徴としている。
【００１０】
請求項３に記載されたＧａＮ蛍光体の製造方法は、請求項１記載のＧａＮ蛍光体の製造方法において、Ｏを含むガスが、Ｏ2 、Ｏ3 、Ｎ2 Ｏ、ＮＯ、空気、Ｈ2 Ｏ、ＣＯ2 、ＣＯからなる群から選択されたことを特徴としている。
【００１１】
請求項４に記載されたＧａＮ蛍光体の製造方法は、請求項１記載のＧａＮ蛍光体の製造方法において、前記ＧａＮ蛍光体の原料物質を管状炉内に配置し、Ｓを含むガスとＯを含むガスから構成される群から選択されたガスと、ＮＨ3 ガスとを、前記管状炉内に流すことを特徴としている。
【００１２】
請求項５に記載されたＧａＮ蛍光体の製造方法は、Ｇａ 1-x Ｉｎ x Ｎ：Ａ（０≦ｘ＜１、Ａ＝Ｚｎ，Ｍｇ）で表されるＧａＮ蛍光体の製造方法において、ＮＨ 3 ガス雰囲気中で、Ｓの粉末を添加した前記ＧａＮ蛍光体の原料物質を焼成することを特徴としている。
【００１３】
【発明の実施の形態】
前記の黒化現象は、本発明者来の調査の結果、Ｇａメタルの析出によるものであることがわかった。即ち、Ｇａ酸化物等の原料物質を窒化して生成されたＧａＮが、アンモニアの分解で生じた水素ガスによって還元され、Ｇａメタルとして遊離したものである。ＧａＮが黒化する問題を解決し、ＧａＮの結晶性を改善するためには、ＧａＮの還元による分解を抑えつつ、ＧａＮの結晶化を行う必要がある。
【００１４】
具体的な方法としては、図１に示す管状炉１を焼成炉として使用する。管状炉１の周囲には加熱手段としてのヒータ２が螺旋状に巻かれており、管状炉１の内部を任意の温度に設定することができる。管状炉１の両端は開放されており、一方（上流側）から他方（下流側）に向けて反応に必要なガスを流すことができる。
【００１５】
前記焼成炉１の内部にＧａＮ蛍光体の原料物質３を配置する。アンモニアとともに、Ｓ又はＯ（又は両方）を含むガスを流す。原料物質３付近にはＳ、Ｏを含む雰囲気が生じる。この結果、原料物質３付近の水素による還元作用が抑制され、生成したＧａＮの分解がおこり難くなるため、焼成温度を上げてもＧａＮの分解による黒化現象は発生しない。このため、焼成温度を上昇させて結晶性の高いＧａＮ蛍光体が得られ、実用的な輝度が得られるようになる。
【００１６】
又は、Ｓ又はＯ（又は両方）が含まれるガスが加熱により発生する物質を、焼成炉１の内部に配置するＧａＮ蛍光体の原料物質３に予め混合しておく。これを焼成すれば原料物質の周りにはＳ、Ｏを含む雰囲気が生じ、上述したのと同様の効果が得られる。
【００１７】
【実施例】
（１）実施例１
ＧａＮ：Ｚｎ蛍光体の製造方法を示す。
蛍光体の原料物質として、母体の原料物質とドープ物質の原料物質を用いる。母体の原料物質としてはＧａ2 Ｏ3 を使用する。ドープ物質の原料物質としてはＺｎＳを用いる。具体的にはＧａ2 Ｏ3 を３ｇと、ＺｎＳを０．６ｇ、互いに良く混合し、焼成ボートに載せる。焼成ボートを管状炉内に挿入し、３５０ｍｌ／ｍｉｎのアンモニアに、Ｈ2 Ｓを５ｍｌ／ｍｉｎ混合して流しながら、原料を１１５０℃で２時間焼成してＧａＮ蛍光体を得た。
【００１８】
この蛍光体をＸ線回折ピークの積分幅（値が小さい程結晶性が良い）から結晶性を評価した。また、ＶＦＤのアノード基板に塗布し、アノード電圧３０Ｖで評価した。さらにＦＥＤのアノード基板に塗布し、アノード電圧４００Ｖで評価した。
【００１９】
焼成温度と結晶性、またはＶＦＤ・ＦＥＤ輝度相対値の関係を図２に示す。
Ｘ線回折ピークの積分値が小さいほど結晶性は良好である。本例では、Ｓ，Ｏを含むガスを添加したために蛍光体が黒化しないので、１０００℃以上の焼成温度で製造することができる。その結果、Ｘ線回折ピークの積分値は図２に示すように０．３０以下（２θ＝３７°）を実現できる。
【００２０】
Ｓ，Ｏを含むガスを添加しない場合は１０００℃以上でＧａＮの分解による黒化現象が発生する。ＶＦＤ・ＦＥＤの輝度は、Ｓ，Ｏを含むガスを添加しない場合はＧａＮの黒化現象のため、実用的な輝度のＧａＮ蛍光体は得られない。Ｓ，Ｏを含むガスを添加した場合はＧａＮの黒化現象は起きず、図２に示すように焼成温度を上げるに従い高い輝度を得ることができる。特に、焼成温度が１０００℃を越えるとＶＦＤ・ＦＥＤの輝度相対値は急激に上昇する。
【００２１】
ＧａＮ蛍光体は、結晶性が低い場合には茶色の体色があり、体色は結晶性の向上とともに薄くなっていく。焼成温度１１００℃の場合、青色領域である４５０ｎｍの分光反射率は６０％であるが、Ｓ，Ｏを含むガスを添加しない場合は２０％であった。
【００２２】
（２）実施例２
ＧａＩｎＮ：Ｍｇ蛍光体の製造方法を示す。
Ｇａ2 Ｓ3 を２ｇ、Ｉｎ2 Ｓ3 を１ｇ、ＭｇＣｌを０．４ｇ、互いに混合して焼成ボートに載せる。実施例１と同様に管状炉内に試料を配置し、アンモニアを３５０ｍｌ／ｍｉｎ流しながら、同時にＮ2 Ｏガスを２０ｍｌ／ｍｉｎ流し、原料を１１００℃で３時間焼成してＧａＩｎＮ：Ｍｇ蛍光体を得た。ＧａＩｎＮ：Ｍｇに黒化は発生せず、実施例１と同様にＶＦＤまたはＦＥＤで評価したところ緑色の発光が得られた。
【００２３】
（３）実施例３
実施例２において、Ｎ2 Ｏガスの代わりにＳＯ2 ガスを５ｍｌ／ｍｉｎ流したところ、実施例２と同様の結果が得られた。
【００２４】
（４）実施例４
実施例２において、Ｎ2 Ｏガスの代わりにＣＯ2 ガスを５ｍｌ／ｍｉｎ流したところ、実施例２と同様の結果が得られた。
【００２５】
（５）実施例５
実施例２において、Ｎ2 Ｏガスの代わりにＯ2 、Ｏ3 、ＮＯ、空気、Ｈ2 Ｏ、ＣＯガスを適量用いても、実施例２と略同様の結果が得られる。なお、これらのガスはそれぞれ単独で用いてもよいし、複数種類を混合して用いてもよい。
【００２６】
（６）実施例６
実施例２において、Ｎ2 Ｏガスを流す代わりに、原料物質にＳの粉末を添加したところ、焼成時にＳがガスとなり、実施例２と同様の結果が得られた。
【００２７】
【発明の効果】
本発明の蛍光体の製造方法によれば、Ｓ・Ｏ系のガスと、ＮＨ3 ガスとの混合雰囲気中でＧａＮ蛍光体の原料物質を焼成するので、次のような効果が得られる。
【００２８】
１．ＧａＮ製造時にＧａＮの分解による黒化現象がおこり難くなるため、焼成温度を上げることが可能になり、このため、ＧａＮの結晶化が促進され、体色の少ない結晶性の高い蛍光体が得られる。
【００２９】
２．上記のため、発光強度の高いＧａＮ蛍光体が得られる。
【図面の簡単な説明】
【図１】本発明の実施の形態乃至実施例で使用される管状炉の断面図である。
【図２】本発明の実施例において、焼成温度に対する結晶性、またはＶＦＤ・ＦＥＤ輝度相対値との関係を示すグラフを表す図である。
【符号の説明】
１…焼成炉としての管状炉、２…加熱手段としてのヒータ、３…ＧａＮ蛍光体の原料物質[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for producing a Ga 1-x In x N: A, B (0 ≦ x <1, A = Zn, Mg, B = Si, Ge) phosphor.
[0002]
[Prior art]
In recent years, GaN has been known as a material that emits blue and green high luminance light emitting elements such as LEDs and LDs in the case of a single crystal. Further, in the case of being represented by the general formula Ga 1-x In x N: A, B (0 ≦ x <1, A = Zn, Mg, B = Si, Ge), a wide range from blue to red Can emit light.
[0003]
Conventionally, in order to manufacture a GaN phosphor, a Ga compound as a raw material is mixed with a compound of a doping material, and this is placed in a firing furnace and baked at a high temperature while flowing ammonia to nitride and Ga. Dope material.
[0004]
There have been attempts in the past to emit light from the material thus obtained with an electron beam, but no practical luminance has been achieved with respect to a phosphor in powder form.
[0005]
[Problems to be solved by the invention]
Unlike the other phosphor materials, the biggest reason why the luminance cannot be obtained is difficulty in nitriding. That is, since this material has a small difference between the nitriding temperature (700 ° C. to 1000 ° C.) and the temperature at which decomposition starts (950 ° C. or more), nitriding and decomposition are likely to proceed simultaneously in a normal heating reaction. For this reason, although GaN can be produced, GaN having such a high crystallinity that it can be used as a phosphor cannot be produced.
[0006]
In order to obtain a nitride such as GaN, a Ga compound, which is a raw material, is generally baked and nitrided at high temperature in an atmosphere using ammonia. It is accompanied by a strong reducing action. When the firing temperature is raised in order to improve the crystallinity of GaN, GaN is reduced and decomposed by this reducing action, and Ga is liberated, resulting in a phenomenon that the body color of the phosphor becomes black. This blackening of the body color is a fatal problem because it is a phenomenon that the phosphor absorbs its own light emission and lowers the luminance.
[0007]
An object of the present invention is to provide a method for producing a GaN-based phosphor that does not blacken even when fired at a high temperature in order to improve crystallinity.
[0008]
[Means for Solving the Problems]
The method for producing a GaN phosphor according to claim 1 is a method for producing a GaN phosphor represented by Ga 1-x In x N: A ( 0 ≦ x <1, A = Zn, Mg) . The GaN phosphor raw material is fired in an atmosphere in which a gas selected from the group consisting of a gas containing S and a gas containing O is added to NH 3 gas.
[0009]
The method for producing a GaN phosphor according to claim 2 is characterized in that, in the method for producing a GaN phosphor according to claim 1, the gas containing S is selected from the group consisting of H 2 S and SO 2. It is said.
[0010]
The method for producing a GaN phosphor according to claim 3 is the method for producing a GaN phosphor according to claim 1, wherein the gas containing O is O 2 , O 3 , N 2 O, NO, air, H 2. It is selected from the group consisting of O, CO 2 and CO.
[0011]
The method for producing a GaN phosphor according to claim 4 is the method for producing a GaN phosphor according to claim 1, wherein the raw material of the GaN phosphor is placed in a tubular furnace, and a gas containing S and O are contained. It is characterized in that a gas selected from the group consisting of a gas containing and NH 3 gas are allowed to flow into the tubular furnace.
[0012]
The method for producing a GaN phosphor according to claim 5 is the method for producing a GaN phosphor represented by Ga 1-x In x N: A (0 ≦ x <1, A = Zn, Mg). The raw material of the GaN phosphor to which S powder is added is fired in a three- gas atmosphere .
[0013]
DETAILED DESCRIPTION OF THE INVENTION
As a result of the present inventors' investigation, it was found that the blackening phenomenon was caused by the precipitation of Ga metal. That is, GaN generated by nitriding a raw material such as Ga oxide is reduced by hydrogen gas generated by the decomposition of ammonia and liberated as Ga metal. In order to solve the problem of blackening of GaN and improve the crystallinity of GaN, it is necessary to crystallize GaN while suppressing decomposition due to reduction of GaN.
[0014]
As a specific method, the tubular furnace 1 shown in FIG. 1 is used as a firing furnace. A heater 2 as a heating means is spirally wound around the tubular furnace 1, and the inside of the tubular furnace 1 can be set to an arbitrary temperature. Both ends of the tubular furnace 1 are open, and a gas necessary for the reaction can flow from one (upstream side) to the other (downstream side).
[0015]
A raw material 3 of GaN phosphor is disposed inside the firing furnace 1. A gas containing S or O (or both) is flowed together with ammonia. An atmosphere containing S and O is generated in the vicinity of the raw material 3. As a result, the reduction action by hydrogen in the vicinity of the raw material 3 is suppressed, and the generated GaN is hardly decomposed. Therefore, the blackening phenomenon due to the decomposition of GaN does not occur even if the firing temperature is raised. For this reason, the calcination temperature is raised to obtain a highly crystalline GaN phosphor, and practical luminance can be obtained.
[0016]
Alternatively, a material that is generated by heating a gas containing S or O (or both) is mixed in advance with the raw material material 3 of the GaN phosphor disposed inside the firing furnace 1. If this is fired, an atmosphere containing S and O is generated around the raw material, and the same effect as described above can be obtained.
[0017]
【Example】
(1) Example 1
A method for manufacturing a GaN: Zn phosphor will be described.
As a raw material material of the phosphor, a parent material material and a raw material material of a doping material are used. Ga 2 O 3 is used as the base material. ZnS is used as a source material for the doping material. Specifically, 3 g of Ga 2 O 3 and 0.6 g of ZnS are mixed well and placed on a firing boat. The baking boat was inserted in a tubular furnace, the ammonia 350 ml / min, while flowing H 2 S were mixed 5 ml / min, to obtain a GaN phosphor raw material was calcined for 2 hours at 1150 ° C..
[0018]
The crystallinity of this phosphor was evaluated from the integral width of the X-ray diffraction peak (the smaller the value, the better the crystallinity). Moreover, it apply | coated to the anode board | substrate of VFD and evaluated by the anode voltage 30V. Furthermore, it apply | coated to the anode board | substrate of FED and evaluated with the anode voltage of 400V.
[0019]
FIG. 2 shows the relationship between the firing temperature and crystallinity, or the relative value of VFD / FED luminance.
The smaller the integrated value of the X-ray diffraction peak, the better the crystallinity. In this example, since the phosphor containing S and O is added and the phosphor is not blackened, it can be manufactured at a firing temperature of 1000 ° C. or higher. As a result, the integral value of the X-ray diffraction peak can be realized to be 0.30 or less (2θ = 37 °) as shown in FIG.
[0020]
When a gas containing S and O is not added, a blackening phenomenon due to decomposition of GaN occurs at 1000 ° C. or higher. The luminance of the VFD / FED cannot be obtained from a GaN phosphor having a practical luminance because of the blackening phenomenon of GaN when a gas containing S and O is not added. When a gas containing S and O is added, the blackening phenomenon of GaN does not occur, and high luminance can be obtained as the firing temperature is increased as shown in FIG. In particular, when the firing temperature exceeds 1000 ° C., the luminance relative value of VFD · FED increases rapidly.
[0021]
When the crystallinity is low, the GaN phosphor has a brown body color, and the body color becomes lighter as the crystallinity improves. When the firing temperature was 1100 ° C., the spectral reflectance at 450 nm, which is the blue region, was 60%, but it was 20% when no gas containing S and O was added.
[0022]
(2) Example 2
A method for producing a GaInN: Mg phosphor will be described.
2 g of Ga 2 S 3 , 1 g of In 2 S 3 and 0.4 g of MgCl are mixed with each other and placed on a firing boat. As in Example 1, a sample was placed in a tubular furnace, and while flowing ammonia at 350 ml / min, N 2 O gas was simultaneously flowed at 20 ml / min, and the raw material was fired at 1100 ° C. for 3 hours to obtain a GaInN: Mg phosphor. Obtained. Blackening did not occur in GaInN: Mg, and green light emission was obtained when evaluated by VFD or FED as in Example 1.
[0023]
(3) Example 3
In Example 2, when the SO 2 gas was flowed at 5 ml / min instead of the N 2 O gas, the same result as in Example 2 was obtained.
[0024]
(4) Example 4
In Example 2, when CO 2 gas was flowed at 5 ml / min instead of N 2 O gas, the same result as in Example 2 was obtained.
[0025]
(5) Example 5
In Example 2, even if an appropriate amount of O 2 , O 3 , NO, air, H 2 O, and CO gas is used in place of N 2 O gas, substantially the same result as in Example 2 can be obtained. These gases may be used alone or in combination of a plurality of types.
[0026]
(6) Example 6
In Example 2, instead of flowing N 2 O gas, S powder was added to the raw material, and S became gas during firing, and the same results as in Example 2 were obtained.
[0027]
【The invention's effect】
According to the method for manufacturing a phosphor of the present invention, since the raw material of the GaN phosphor is baked in a mixed atmosphere of an S.O-based gas and NH 3 gas, the following effects can be obtained.
[0028]
1. Since the blackening phenomenon due to the decomposition of GaN hardly occurs during GaN production, it becomes possible to raise the firing temperature. For this reason, the crystallization of GaN is promoted, and a phosphor with a low crystal color and high crystallinity can be obtained. .
[0029]
2. For this reason, a GaN phosphor with high emission intensity can be obtained.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a tubular furnace used in embodiments and examples of the present invention.
FIG. 2 is a graph showing a relationship between a crystallinity with respect to a firing temperature or a relative value of VFD / FED luminance in an example of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Tubular furnace as a baking furnace, 2 ... Heater as a heating means, 3 ... Raw material material of GaN fluorescent substance
Claims (5)
Ｓを含むガスとＯを含むガスから構成される群から選択されたガスを、ＮＨ3 ガスに添加した雰囲気中で、前記ＧａＮ蛍光体の原料物質を焼成することを特徴とするＧａＮ蛍光体の製造方法。In the method for producing a GaN phosphor represented by Ga 1-x In x N: A ( 0 ≦ x <1, A = Zn, Mg) ,
A GaN phosphor characterized by firing a raw material of the GaN phosphor in an atmosphere in which a gas selected from the group consisting of a gas containing S and a gas containing O is added to NH 3 gas Production method.
ＮＨNH 3 Three ガス雰囲気中で、Ｓの粉末を添加した前記ＧａＮ蛍光体の原料物質を焼成することを特徴とするＧａＮ蛍光体の製造方法。A method for producing a GaN phosphor, comprising firing a raw material of the GaN phosphor to which S powder is added in a gas atmosphere.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP37353998A JP3867425B2 (en) | 1998-12-28 | 1998-12-28 | GaN phosphor manufacturing method |
| TW088121932A TW498102B (en) | 1998-12-28 | 1999-12-15 | A process for preparing GaN fluorescent substance |
| KR10-1999-0062528A KR100384397B1 (en) | 1998-12-28 | 1999-12-27 | Method for preparing gallium nitride phosphor |
| FR9916519A FR2787805B1 (en) | 1998-12-28 | 1999-12-27 | PROCESS FOR THE PREPARATION OF A GALLIUM NITRIDE LUMINOPHORE |
| US09/472,011 US6303403B1 (en) | 1998-12-28 | 1999-12-27 | Method for preparing gallium nitride phosphor |
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| Application Number | Priority Date | Filing Date | Title |
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| JP37353998A JP3867425B2 (en) | 1998-12-28 | 1998-12-28 | GaN phosphor manufacturing method |
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| Publication Number | Publication Date |
|---|---|
| JP2000198977A JP2000198977A (en) | 2000-07-18 |
| JP3867425B2 true JP3867425B2 (en) | 2007-01-10 |
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