JP3873294B2 - Manufacturing method of connecting member - Google Patents

Description

[0001]
[Industrial application fields]
The present invention relates to a method for manufacturing a connecting member that electrically connects opposing electrodes arranged at a fine pitch.
[0002]
[Prior art]
Conventionally, as a connecting member for electrically inspecting semiconductor elements and module substrates, a nickel sheet is filled in a rubber sheet and pressed to ensure electrical connection, or a pin-like probe is arranged on one side was there. In addition, there are film materials in which metal bumps penetrating the heat-resistant insulating film are arranged at a predetermined density, and those having a developed wiring pattern electrically connected to the metal bumps on the opposite surface.
[0003]
In the case of an inspection substrate having a rubber sheet or a probe filled with conductive particles, there is a problem that there is a limit to miniaturization of the inspection pitch. From the above background, a film base material in which metal bumps are arranged at a predetermined pitch has been proposed. ("Microfilm connector for high-density mounting": Electronic materials, p28 (November 1992)), "Aligned fine pitch": NIKKEI MICRODEVICES, p15 (March 1992)). The metal bumps protrude upward and downward from the polyimide layer, and the upper and lower protrusions are in contact or bonded between the opposing electrodes to ensure electrical conduction. In the manufacturing method, after forming a polyimide layer on the copper foil, a recess reaching the copper foil from the polyimide layer surface is formed, and an exposed portion of the copper foil is isotropically etched by a predetermined amount, and the bottom of the recess is formed by electroplating. The metal bumps (conducting metal pillars) are formed.
[0004]
[Problems to be solved by the invention]
The cross-sectional shape of the metal bump formed by this method is a rivet shape, and the top of the bump is larger than the diameter of the recess formed in the polyimide layer. That is, even if the recess diameter can be controlled with high accuracy, the plating grows isotropically in a region larger than the polyimide layer thickness, so that it is necessary to control the accuracy in the growth direction. When bumps are actually formed in a small area by electroplating, there are complicated factors such as bump arrangement, current density, and plating tank configuration, and as a result, the bump shape (diameter, height from the polyimide layer surface) can be controlled. It was difficult. In particular, when applying fine bumps as probers for semiconductor wafer burn-in tests, if the bump height and bump diameter are uneven, good contact with the aluminum electrode in the Z direction cannot be obtained, and further in the X and Y directions. There is a problem in that the tolerance for misalignment is reduced.
The present invention provides a method of manufacturing a connection member that performs formation of metal bumps (metal pillars) that electrically connect electrodes with high accuracy.
[0005]
[Means for Solving the Problems]
The present invention
1A. Forming a metal pillar penetrating the insulating base material at a desired position of the sheet-like insulating base material;
1B. Polishing a predetermined amount of the insulating base and the metal pillar to flatten the surface of the insulating base and the top of the metal pillar,
1C. Irradiating a laser beam having an oscillation wavelength in the ultraviolet region from the polishing surface, selectively removing the insulating substrate having a desired thickness, and projecting a desired portion of the metal pillar from the insulating substrate surface,
It is a manufacturing method of the connecting member characterized by including a process.
[0006]
As the sheet-like insulating substrate, a flexible material such as a polyimide film is preferable.
As a polishing method used in the present invention, a chemical etching method such as an electrolytic polishing method can be applied, but a method of physically polishing such as a polishing abrasive or a method in which a polishing abrasive is fixed on a belt is preferable. . In this case, the polishing end point is when the diameter of the top of the plating column becomes the diameter of the recess for forming the metal plating column, and the processing accuracy of the recess is directly the formation accuracy of the top of the metal plating column. That is, by forming the recesses with high accuracy using laser light or a known photolithography method, it is possible to process the tops of the metal pillars with the same degree of accuracy.
[0007]
Excimer laser light is suitable as the laser light irradiated from the insulating substrate surface, and XeF (wavelength: 351 nm), XeCl (wavelength: 308 nm), KrF (wavelength: 248 nm), ArF (wavelength: 193 nm), etc. can be used. It is. For example, when ablation processing (etching processing) is performed on polyimide resin by irradiation with KrF excimer laser light, the processing depth can be controlled on the order of submicrons. In this case, the processing method is not particularly limited, and a contact mask method, a conformal mask method, a mask image method, and the like can be applied.
[0008]
The connection member of the present invention is used not only for inspection of a semiconductor element, a module substrate, etc. but also for connection.
[0009]
【Example】
Example 1
An embodiment of the present invention will be described with reference to FIG.
A first resist pattern 12 is formed on a copper foil of a 250 mm square copper-clad polyimide film (manufactured by Hitachi Chemical Co., Ltd .: trade name MCF5000-I) 11 (a) (b), and a known subtract method is used. After forming the predetermined wiring pattern 13, the first resist pattern was peeled off (c). Next, a KrF excimer laser with a wavelength of 248 nm was irradiated from a polyimide surface to a predetermined position by a mask image method to form a recess (diameter 30 μm) 14 reaching the wiring pattern 13 (d). Since the excimer laser used has a processing speed of 0.2 μm / pulse, the required processing depth can be obtained by controlling the number of pulses. In this case, a predetermined portion of the wiring pattern could be exposed with about 150 pulses.
Next, after forming the second resist pattern 15 on the surface of the wiring pattern 13, a plating column 16 over the polyimide layer surface was formed from the bottom of the recess (copper foil surface exposed by laser irradiation) by copper sulfate plating (e). Next, the top of the plating column and the polyimide surface were polished to flatten the plating column top and the polyimide surface, and then the entire surface was irradiated with excimer laser light (f) to project the metal plating column by 10 μm from the polyimide surface. (G). Finally, after the second resist pattern 15 was peeled off, an electroless pattern gold plating 18 having a thickness of 0.2 μm was applied as a surface finish for corrosion prevention. In this case, the metal plating column top diameter d was within ± 2 μm with respect to the design value.
[0010]
Example 2
An embodiment of the present invention will be described with reference to FIG.
A nickel thin layer 22 having a thickness of 0.5 μm was formed on an electrolytic copper foil 21 having an outer shape of 250 mm square and a thickness of 35 μm (trade name SLP-12, manufactured by Nihon Denki Co., Ltd.) (a). Next, a dry film resist (manufactured by Hitachi Chemical Co., Ltd .: trade name HS-415ED) was laminated to form a desired first resist pattern 23 by known exposure and development. Next, a wiring pattern 24 was formed by copper sulfate plating at a current density of 3.0 A / dm 2 (b). Next, after the first resist pattern 23 is peeled off with a 3.0 wt% potassium hydroxide solution, the adhesive surface of the polyimide coverlay 25 (manufactured by Nikkan Kogyo Co., Ltd .: trade name CUSV-2035) is used as the wiring pattern surface. It was laminated with the wiring pattern by heating and pressing at 170 ° C. and 30 kgf / cm 2 for 60 minutes. Subsequently, a KrF excimer laser having a wavelength of 248 nm was irradiated to a predetermined position from the coverlay side by a mask image method to form a recess (diameter 30 μm) 26 reaching the wiring pattern 24 (d). Since the excimer laser used has a processing speed of 0.2 μm / pulse, the required processing depth can be obtained by controlling the number of pulses. In this case, a predetermined portion of the wiring pattern could be exposed with about 300 pulses. Next, the plating pillar 27 beyond the coverlay surface was formed from the wiring pattern surface exposed by copper sulfate plating (e). Next, the top of the plating column and the coverlay surface are polished to flatten the plating column top and the coverlay surface, and then the entire surface is irradiated with an excimer laser beam 8 so that the metal plating column protrudes from the coverlay surface by 10 μm. (F). Next, after forming a second resist pattern 29 on the polished surface, the copper foil 21 exposed by an alkali etchant (manufactured by Meltex: trade name A process) is exposed, and then the nickel thin layer 22 is nickel etched. The wiring pattern 24 was exposed by etching with a liquid (Meltex, product name: Melstrip), and the connection terminal portion 30 was formed. Finally, after the second resist pattern 29 was peeled off, an electroless pattern gold plating 31 having a thickness of 0.2 μm was applied as a surface finish for corrosion prevention.
[0012]
【The invention's effect】
According to the present invention, the processing accuracy in the XY and Z directions of the tops of the fine bumps (conducting metal columns), which has been a problem in the past, can be remarkably improved.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a manufacturing process of an embodiment of the present invention.
FIG. 2 is a cross-sectional view showing a manufacturing process of another embodiment of the present invention.
[Explanation of symbols]
11. Copper-clad polyimide film 12. First resist pattern 13. Wiring pattern 14. Recess 15. Recess resist pattern 16. Plating metal pillar 17. Laser beam 18. Pattern gold plating 21. Copper foil 22. Metal thin layer 23. First resist pattern 24. Wiring pattern 25. Polyimide coverlay 26. Recess 27. Plating metal column 28. Laser light 29. Second resist pattern 30. Connection terminal portion 31. Pattern gold plating

Claims (1)

2A. Form a metal thin layer with different etching conditions from the temporary substrate on the temporary substrate having conductivity,
2B. A predetermined resist pattern is formed on the thin metal layer,
2C. After forming a predetermined wiring pattern using the temporary substrate as an electrode, strip the resist pattern,
2D. Laminate insulating base material facing the wiring pattern,
2E. Form a recess reaching the wiring pattern from the insulating substrate side at a predetermined position,
2F. Deposit a metal plating column from the bottom of the recess to the surface of the insulating base material by electroplating using the temporary substrate as an electrode,
2G. Polishing a predetermined amount of the insulating substrate and metal plating column to flatten the surface of the insulating substrate and the top of the metal plating column,
2H. A laser beam having an oscillation wavelength in the ultraviolet region is irradiated from the polishing surface, the insulating base material having a desired thickness is selectively removed, and a desired portion of the metal plating column is projected from the insulating base surface,
2I. Etching away the desired portion of the temporary substrate, followed by the thin metal layer,
The manufacturing method of the connection member characterized by including a process.

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