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JP4010664B2 - Surface acoustic wave filter - Google Patents
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JP4010664B2 - Surface acoustic wave filter - Google Patents

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JP4010664B2
JP4010664B2 JP23889098A JP23889098A JP4010664B2 JP 4010664 B2 JP4010664 B2 JP 4010664B2 JP 23889098 A JP23889098 A JP 23889098A JP 23889098 A JP23889098 A JP 23889098A JP 4010664 B2 JP4010664 B2 JP 4010664B2
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metal
acoustic wave
surface acoustic
wave filter
saw
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JP2000068783A (en
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直人 猪瀬
ウー・ホク・ホア
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Oki Electric Industry Co Ltd
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Oki Electric Industry Co Ltd
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Description

【0001】
【発明の属する技術分野】
本発明は、圧電体或いは強誘電体の基板に電極が形成された1端子対弾性表面波(以下、SAWという)共振子を多段の梯型に接続したSAWフィルタに関するものである。
【0002】
【従来の技術】
従来、SAW共振子を用いたSAWフィルタに関する技術としては、例えば次のような文献に記載されたものがある。
文献1;電子情報通信学会論文誌A、J76-A [2](1993−2)、佐藤 他著 “SAW共振器を用いた低損失帯域フィルタ”P.245-252
文献2;電子情報通信学会論文誌A、J76-A [2](1993−2)、疋田 他著 “移動無線通信機用SAWフィルタの実験”P.233-244
図2(a),(b)は、従来のSAW共振子の構造及び等価回路を示す図である。
このSAW共振子は、基板1上に形成され、SAWを送受するためのすだれ状電極(以下、IDTという)2を有している。IDT2の両側には、IDT2の両側には、金属ストリップで形成されたグレーティング反射器3が必要に応じて配置されている。基板1は、例えば結晶方位が36°Y−XのLiTaO3 単結晶基板等で構成され、IDT2及び反射器3は該基板1に蒸着されたAl薄膜等で構成されている。SAW共振子の等価回路は、例えば図3(b)のように、1対の端子間に直列に接続されたインダクタ4及びキャパシタ5と、これらに並列のキャパシタ6とで表すことができる。
【0003】
図3(a),(b)は、前記文献1に記載された従来の1段定K型SAWフィルタの原理を示す説明図である。
多段梯型SAWフィルタの基本構成は、図3(a)の1段定K型SAWフィルタ10である。この1段定K型SAWフィルタ10は、図2(a),(b)のSAW共振子を直列腕共振子11及び並列腕共振子12として梯型に接続したフィルタである。定K型フィルタの理論により、図3(b)のように、直列腕共振子11の共振周波数と並列腕共振子12の反共振周波数を一致させることにより、通過域とそれを挟む減衰域とを持つような周波数特性が得られ、帯域フィルタが形成できる。
以上のような1段定K型SAWフィルタ10では、十分な減衰量が得難いので、通常、次の図4のように、図2のSAWフィルタ10を多段に接続して用いる。
【0004】
図4は、従来の多段定K型SAWフィルタの例を示す接続図である。
この多段定K型SAWフィルタは、図3(a)の一段定K型SAWフィルタ10を多段の例えば4段に縦続接続したものであり、各段の直列腕共振子及び並列腕共振子12の共振周波数は共に同じにそれぞれ設定されている。但し、小型化のため、隣接する直列腕共振子同士、及び隣接する並列腕共振子同士を回路網的に合成し、同一の共振周波数であるが異なる共振子に置換する場合もある。
図5(a)〜(e)は、図4のSAWフィルタの製造工程を示す図である。
図4のSAWフィルタは、例えば図5(a)〜(e)の工程を経て形成される。
【0005】
まず、図5(a)の工程では、結晶方位が36°Y−XのLiTaO3 単結晶基板1を用意し、該基板1のパターン形成予定面にレジスト13をスピンコートで塗布する。図5(b)の工程において、レジスト13が塗布された基板1に対して光学マスク14を設定し、光15で露光することにより、レジスト13にSAWフィルタのパターンを転写する。図5(c)の工程において、現像で不要なレジスト13を選択的に除去する。図5(d)の工程において、不要なレジスト13が除去された基板1の上全面に、SAW共振子の電極となるAl薄膜16を蒸着する。図5(e)の工程において、有機溶剤を用いて、Al薄膜14の不要な部分をレジスト13と共に除去する。
【0006】
【発明が解決しようとする課題】
しかしながら、従来の図4のSAWフィルタには、次のような課題があった。
図6は、図4の課題の周波数特性を示す図である。
従来の図4の多段定K型のSAWフィルタでは、各段の直列腕共振子がすべて同じ共振周波数を持ち、かつ、各段の並列腕共振子もすべて同じ共振周波数を持つ構成なので、同一周波数で減衰極が重なり、図6のように、狭い周波数範囲では十分な減衰量が得られるが、広範囲で十分な減衰量を確保することが難しい。これを解決して広い帯域に渡って十分な減衰量を得るためには、図3(a),(b)の1段梯型SAWフィルタ10をさらに多くの段数に縦続接続しなければならなかった。ところが、縦続接続する段数を増加させることは、素子数が増加するばかりでなく、通過域での損失を増加させることになり、技術的に満足できるものが得られなかった。
また、縦続接続する段数を増加させず、広い周波数に渡って十分な減衰量を得るために、直列腕の制動容量を減じるか、並列腕の制動容量を増やして共振子のQを下げる方法も考えらるが、通過域での損失も増加する。
【0007】
図7は、多段定K型SAWフィルタの他の例を示す接続図であり、図8は、図7の周波数特性を示す図である。
このSAWフィルタは、図4のSAWフィルタの直列腕の端部に新たなSAW共振子17を接続したフィルタである。共振周波数が各直列腕SAW共振子とは異なるSAW共振子17を接続することにより、減衰域が通過域より高い周波数に設定されている場合、図8のように、周波数の異なる減衰極が追加され、減衰域における減衰量を稼ぐことができるが、通過域における挿入損失が増加するという問題がある。また、この場合にも、素子数が増加するということになり、チップサイズが増加することになる。
一方、前記文献2には、次の図9のように、複数の直列SAW共振子が接続された帯域阻止型フィルタが記載されている。
【0008】
図9は、従来の帯域阻止型フィルタを示す接続図であり、図10は、図9の周波数特性を示す図である。
図9のフィルタでは、複数のSAW共振子111 ,112 ,…,115 が直列腕として接続され、該各直列腕SAW共振子111 〜115 の共振周波数f01,f02,f03,f04,f05は、それぞれ異なっている。この直列腕のSAW共振子111 〜115 が接続された帯域阻止型フィルタの周波数特性では、各SAW共振子111 〜115 による減衰極がすべて異なり、広帯域の減衰域にできるが、通過域でこれらのSAW共振子111 〜115 の制動容量が直列に接続されることにより、全体の制動容量が小さくなる。よって、直列腕のSAW共振子111 〜115 の対数、及び各電極の交差長を非常に大きくしないと、通過域での挿入損失が増加する。即ち、チップサイズが大きくなるか、通過域の低域での挿入損失が増加するという課題があった。
【0009】
【課題を解決するための手段】
前記課題を解決するために、本発明のうちの第1の発明は、圧電体或いは強誘電体単結晶基板上に電極となる金属或いは合金が蒸着されて形成された1端子対弾性表面波共振子でそれぞれ構成される複数の直列腕SAW共振子及び並列腕SAW共振子を多段の梯型に接続したフィルタであって、周波数の所定の位置に通過帯域と減衰帯域を持つSAWフィルタにおいて、次のような構成にしている。即ち、前記各直列腕SAW共振子の共振周波数は、前記電極となる金属または合金の比重の違いによって前記梯型の各段ごとにずらしている。
第2の発明は、第1の発明のSAWフィルタにおいて、前記複数の直列腕SAW共振子のうちの1つのSAW共振子の電極は、第1の金属によって形成し、該複数の直列腕SAW共振子のうちの他のSAW共振子の電極は、該第1の金属に該第1の金属よりも比重が重い第2の金属を配合した合金よって形成している。
【0010】
第3の発明は、第1または第2の発明のSAWフィルタにおいて、前記直列腕SAW共振子の電極を形成する金属の比重は、前記多段の梯型の第1段目から後段にいくに従って減少する構成にしている。
第4の発明は、第4の発明のSAWフィルタにおいて、次のように構成している。
即ち、前記合金における前記第2の金属を前記第1の金属に配合する割合は、前記SAW共振子の前記梯型における段数に応じて、該第1の金属の比重に対応する係数をα及びβとすると共に許容誤差をγとして表した次の式で求めた割合としている。
(α±γ)/(第2の金属の比重/第1の金属の比重−1)×(減衰域の周波数(MHz)×β)/(段数−1) [%]
【0011】
第5の発明は、第2〜第4の発明のSAWフィルタにおいて、前記第1の金属はAlで構成し、前記第2の金属は比重が4〜10の金属から選択された金属で構成している。
第6の発明は、第2〜第5の発明のSAWフィルタにおいて、前記第2の金属は、Ti、Sn、NiまたはCuで構成している。
第7の発明は、第4の発明のSAWフィルタにおいて、前記第1の金属を前記Alで構成した場合の前記係数αは0.4とし、前記係数βは0.6とし、前記誤差は0.05としている。
第8の発明は、第1〜第7の発明のSAWフィルタにおいて、前記圧電体或は強誘電体単結晶基板は、LiNbO3 単結晶基板またはLiTaO3 単結晶基板で構成している。
【0012】
第9の発明は、第8の発明のSAWフィルタにおいて、前記LiTaO3 単結晶基板は、結晶方位が36°Y−XまたはX−112°Yの基板にしている。
第10の発明は、第8の発明のSAWフィルタにおいて、前記LiNbO3 単結晶基板は、結晶方位が41°Y−X、64°Y−Xまたは128°Y−Xの基板にしている。
第1〜第10の発明によれば、以上のようにSAWフィルタを構成したので、
複数の直列腕SAW共振子の共振周波数は、電極となる金属の比重の違いによって各段ごとにずらされ、該各SAW共振子における音速が変化し、減衰極がずれる。そのため、通過域の高域側の減衰域が広くなり、前記課題を解決できるのである。
【0013】
【発明の実施の形態】
図1は、本発明の実施形態を示す多段梯型SAWフィルタの接続図である。
この多段梯型SAWフィルタは、1段梯型SAWフィルタを第1〜4段の4段に縦続接続したものであり、多段梯型の直列腕となる直列腕SAW共振子211 ,212 ,213 ,214 と、梯型の並列腕となる並列腕SAW共振子221 ,222 ,223 ,224 とで構成されている。
各直列腕SAW共振211 〜214 は、図3(a)のように、基板に電極となる金属が蒸着されてそれぞれ形成されているが、これらの電極を形成する金属の比重がそれぞれ変えられている。例えば、各直列腕SAW共振子211 〜213 の電極は第1の金属であるAlとそれよりも比重が重い第2の金属であるCu (銅)との合金で構成され、Cuの割合が順に10.18%、6.78%、3,39%になっている。直列腕SAW共振子214 の電極は、純Alで形成されている。一方、各並列腕SAW共振子221 〜224 の電極は、すべて、Cuの割合が10.18%の合金で構成されている。
【0014】
図11(a)〜(e)は、図1のSAWフィルタの製造工程の概要を示す断面図である。
図1のSAWフィルタは、図11(a)〜(c)に示される工程を行い、図11(d),(e)の工程を繰り返すことで形成される。
まず、図11(a)の工程において、例えば結晶方位が36°Y−XのLiTaO3 単結晶基板31を用意し、該基板31のパターン形成予定面にレジスト32をスピンコートで塗布する。図11(b)の工程において、レジスト32が塗布された基板31に対して光学マスク33を設定し、光34で露光することにより、レジスト32にSAWフィルタのパターンを転写する。
【0015】
図11(c)の工程において、現像で不要なレジスト32を選択的に除去する。図11(d)の工程において、不要なレジスト32が除去された基板31の上の1段目の直列腕SAW共振子211 の形成予定領域と並列腕SAW共振子221 〜224 の形成予定領域に、電極となる合金の薄膜35を蒸着する。図11(e)の工程において、有機溶剤を用いて、薄膜35の不要な部分をレジスト32と共に除去する。以上の工程によって、1段目の直列腕SAW共振子211 と1〜4段目の並列腕SAW共振子221 〜224 とが形成される。この後、図11(d)及び(e)の工程を、他の段の各直列腕SAW共振子212 〜214 を形成するために順に繰り返す。ただし、薄膜35としては、前述のCuの含有率の異なった合金と純Alとがそれぞれ用いられる。
このような構成の図1の多段SAWフィルタは、SAW共振子211 〜214 及びSAW共振子221 〜224 によって設定された周波数特性を持ち、バンドパスフィルタとして動作する。
【0016】
図12は、図1のSAWフィルタの周波数特性を示す図である。この図12を参照しつつ、図1の帯域を説明する。
各直列腕SAW共振子211 〜214 の共振周波数をそれぞれfrs1 〜frs4 とすると共に反共振周波数をそれぞれfas1 〜fas4 とし、各並列腕SAW共振子221 〜224 の共振周波数をそれぞれfrp1 〜frp4 とすると共に反共振周波数をそれぞれfap1 〜fap4 とすると、これらの関係は、次のようになる。
frs1 =fap1
frs2 >fap2
frs3 >fap3
frs4 >fap4
frs4 >frs3 >frs2 >frs1
frp4 =frp3 =frp2 =frp1
fap4 =fap3 =fap2 =fap1
つまり、梯型の1段目は直列腕SAW共振子211 の共振周波数と並列腕SAW共振子221 の反共振周波数とが等しく、後段にいくにつれて直列腕SAW共振子の共振周波数が並列腕SAW共振子の反共振周波数よりも高くなる。よって、1段目は定K型構成であるが、2段目以降は定K型構成よりも高周波側に広い帯域を持つ1段梯型フィルタとなる。
【0017】
ここで、図1のSAWフィルタ全体は、1段目〜4段目までの1段梯型フィルタを縦続接続したものなので、各直列腕SAW共振子211 〜214 の異なる共振周波数で決まる減衰極が合成されることになり。段数を増加させなくても、図12のように高域側の減衰域が広がる。なお、frs2 ≠fap2 、frs3 ≠fap3 、及びfrs4 ≠fap4 となって定K型フィルタの条件から外れることにより、通過域における挿入損失が若干増えるが、各段の周波数シフトが小さいので、段数を増加させることよりも、損失の劣化は少ない。
即ち、SAW共振子の電極をAl(比重2.69)よりも、重い金属にすると、SAW共振子における音速がAlの場合よりも下がり、共振周波数が低い方にシフトし、減衰域も低い方の周波数にシフトする。図1のSAWフィルタでは、直列腕SAW共振子211 〜214 ごとに、電極の比重が変化するので、これらSAW共振子211 〜214 で設定される減衰極の周波数が異り、フィルタ全体としての減衰域が広がる。
結晶方位が36°Y−XのLiTaO3 単結晶基板22に、4段構成で比帯域が2.84%の減衰域を得る場合、2〜4段目の直列腕SAW共振子212 〜214 のそれぞれの比帯域を0.57%シフトすると所望の帯域幅の減衰域が得られる。
【0018】
例えば、h/λ(hは膜厚、λは波長)が0.1075の場合、前述のようにSAW共振子211 〜214 の電極におけるCuの含有率をそれぞれ10.8%、6.78%、3,39%、及び0%に設定するとちょうどよい減衰域が得られる。これは、各SAW共振子211 〜213 の電極のAlに加える金属の割合を次の(1)式で表す分だけ変化させたことに相当する。
α/((Alに加える金属の比重/Alの比重)−1)×(減衰帯域(MHz)×β)/(段数−1) [%] ・・・・(1)
但し、α及びβは、Alの比重を2.69とした場合の係数であり、具体的には、αは0.4であり、βは0.6である。なお、許容誤差として0.05程度のγを、αに対して加算または減算するようして(1)式を適用するのが実用的である。
【0019】
以上のように、本実施形態では、SAW共振子211 〜214 ,221 〜224 を梯型に接続した多段梯型SAWフィルタにおいて、直列腕SAW共振子214 以外の直列腕SAW共振子の電極を、Alと該Alよりも比重の重いCuとの合金でそれぞれ形成し、これらSAW共振子211 〜213 の合金の配合を順に変化させたので、共振子の音速が異なって低下し、各SAW共振子211 〜214 で形成される減衰極が異なる周波数にシフトし、減衰域が広くなる。よって、次のような利点が得られる。
(i) 1段梯型フィルタの縦続接続数が少くても、所望幅の減衰域が得られるので、結果として低損失のフィルタを実現できる。
(ii) 減衰域が広帯域化されるので、直列腕の最後尾に別途減衰極を形成するためのSAW共振子を設ける必要がなくなり、チップサイズを小さくできる。
(iii) 直列腕SAW共振子211 〜214 の電極の比重を変化させたので、各共振子の対数が同じで、同じ交差長の共振子であっても、不要な他の振動モードや縦或は横モード等のスプリアスモードの周波数が、各SAW共振子211 〜214 毎に異なり、通過域や減衰域への影響が小さい。
【0020】
(iv) 図9のような帯域阻止型フィルタの場合に比較して、共振子の対数、及び交差長を大きくする必要がないので、チップサイズが小さくてすむ。
(v) 図9のような帯域阻止型フィルタの場合に比較して、通過域低域側での挿入損失の増加を防止できる。
(vi) 直列腕SAW共振子211 〜214 ごとに、蒸着する金属を変更するだけで実現でき、特別に複雑な工程を必要としないので、従来の製造設備等がそのまま利用できる。
【0021】
なお、本発明は、上記実施形態に限定されず種々の変形が可能である。その変形例としては、例えば次のようなものがある。
(1) Alに加える金属は、Cu以外でもよく、Ti(チタン)、Sn(錫)、Ni(ニッケル)、場合によってはAu(金)等でもよく、Cuの比重を比較して周波数変化を計算し、該計算結果に基づいて混合比を調整すれば、上記実施形態と同様の効果を奏する。
(2) SAWフィルタを形成するに際し、リフトオフの替りに、エッチングを利用してもよい。
(3) 基板31は、結晶方位が41°Y−X、64°Y−Xまたは128°Y−XのLiNbO3 単結晶基板や、X−112°YのLiTaO3 単結晶基板を用いてもよい。
(4) 直列腕SAW共振子211 〜213 の電極を形成する合金は、Alに対して同じ金属を配合した合金でなくてもよい。適宜、Cu、Ti、Sn、Ni、Auの選択を替えてもよい。
【0022】
【発明の効果】
以上詳細に説明したように、第1〜第10の発明は、複数の直列腕SAW共振子の共振周波数を、電極となる金属の比重の違いによって各段ごとにずらした構成にしたので、該各直列腕SAW共振子における音速が変化し、減衰極がずれる。そのため、挿入損失を犠牲にすることや、素子数を増加させることなく、該通過域の高域側に設定される減衰域の周波数帯域を広げることができる。
【図面の簡単な説明】
【図1】本発明の実施形態を示す多段梯型SAWフィルタの接続図である。
【図2】従来のSAW共振子の構造及び等価回路を示す図である。
【図3】従来の1段定K型SAWフィルタの原理を示す説明図である。
【図4】従来の多段定K型SAWフィルタを示す接続図である。
【図5】図4のSAWフィルタの製造工程を示す図である。
【図6】図4のSAWフィルタの課題の周波数特性を示す図である。
【図7】多段定K型SAWフィルタの他の例を示す接続図である。
【図8】図7の周波数特性を示す図である。
【図9】従来の帯域阻止型フィルタを示す接続図である。
【図10】図9の周波数特性を示す図である。
【図11】図1のSAWフィルタの製造工程の概要を示す断面図である。
【図12】図1のSAWフィルタの周波数特性を示す図である。
【符号の説明】
211 〜214 直列腕SAW共振子
221 〜224 並列腕SAW共振子
31 基板
35 電極
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a SAW filter in which a one-terminal-pair surface acoustic wave (hereinafter referred to as SAW) resonator having electrodes formed on a piezoelectric or ferroelectric substrate is connected in a multi-stage ladder shape.
[0002]
[Prior art]
Conventionally, as a technique related to a SAW filter using a SAW resonator, there is one described in the following literature, for example.
Document 1; IEICE A, J76-A [2] (1993-2), Sato "low loss band filter using SAW resonators" et al P.245-252
Reference 2; IEICE Transactions A, J76-A [2] (1993-2), Tomita et al. “Experiments on SAW filters for mobile radio communications equipment” P.233-244
2A and 2B are diagrams showing a structure and an equivalent circuit of a conventional SAW resonator.
This SAW resonator is formed on a substrate 1 and has an interdigital electrode (hereinafter referred to as IDT) 2 for transmitting and receiving SAW. On both sides of the IDT 2, grating reflectors 3 formed of metal strips are arranged on both sides of the IDT 2 as necessary. The substrate 1 is composed of, for example, a LiTaO 3 single crystal substrate having a crystal orientation of 36 ° YX, and the IDT 2 and the reflector 3 are composed of an Al thin film deposited on the substrate 1. An equivalent circuit of the SAW resonator can be represented by an inductor 4 and a capacitor 5 connected in series between a pair of terminals, and a capacitor 6 in parallel thereto, as shown in FIG. 3B, for example.
[0003]
FIGS. 3A and 3B are explanatory views showing the principle of the conventional one-stage constant K-type SAW filter described in Document 1. FIG.
The basic configuration of the multistage ladder-type SAW filter is the one-stage constant K-type SAW filter 10 of FIG. The one-stage constant K-type SAW filter 10 is a filter in which the SAW resonators shown in FIGS. 2A and 2B are connected in a trapezoidal manner as a series arm resonator 11 and a parallel arm resonator 12. According to the theory of the constant K-type filter, as shown in FIG. 3B, by matching the resonance frequency of the series arm resonator 11 with the anti-resonance frequency of the parallel arm resonator 12, the pass band and the attenuation band sandwiching it Thus, a frequency characteristic such as can be obtained, and a bandpass filter can be formed.
Since it is difficult to obtain a sufficient amount of attenuation in the single-stage constant K-type SAW filter 10 as described above, the SAW filter 10 shown in FIG. 2 is usually connected in multiple stages as shown in FIG.
[0004]
FIG. 4 is a connection diagram illustrating an example of a conventional multistage constant K-type SAW filter.
This multi-stage constant K-type SAW filter is obtained by cascading the single-stage constant K-type SAW filter 10 in FIG. 3A in, for example, four stages, and the series-arm resonator and the parallel-arm resonator 12 of each stage. The resonance frequencies are both set to be the same. However, in order to reduce the size, the adjacent series arm resonators and the adjacent parallel arm resonators may be combined in a circuit network and replaced with different resonators having the same resonance frequency but different.
FIGS. 5A to 5E are diagrams showing a manufacturing process of the SAW filter of FIG.
The SAW filter in FIG. 4 is formed, for example, through the steps of FIGS.
[0005]
First, in the process of FIG. 5A, a LiTaO 3 single crystal substrate 1 having a crystal orientation of 36 ° YX is prepared, and a resist 13 is applied to the pattern formation surface of the substrate 1 by spin coating. In the step of FIG. 5B, an optical mask 14 is set on the substrate 1 coated with the resist 13, and the SAW filter pattern is transferred to the resist 13 by exposing with light 15. In the step of FIG. 5C, the resist 13 unnecessary for development is selectively removed. In the step of FIG. 5D, an Al thin film 16 to be an electrode of the SAW resonator is deposited on the entire upper surface of the substrate 1 from which the unnecessary resist 13 has been removed. 5E, unnecessary portions of the Al thin film 14 are removed together with the resist 13 using an organic solvent.
[0006]
[Problems to be solved by the invention]
However, the conventional SAW filter of FIG. 4 has the following problems.
FIG. 6 is a diagram illustrating the frequency characteristics of the problem of FIG.
In the conventional multi-stage constant K-type SAW filter of FIG. 4, the series arm resonators of each stage all have the same resonance frequency, and the parallel arm resonators of each stage all have the same resonance frequency. As shown in FIG. 6, sufficient attenuation can be obtained in a narrow frequency range, but it is difficult to ensure sufficient attenuation over a wide range. In order to solve this problem and obtain a sufficient amount of attenuation over a wide band, the one-stage ladder-type SAW filter 10 shown in FIGS. 3A and 3B must be cascaded in a larger number of stages. It was. However, increasing the number of cascaded stages not only increases the number of elements, but also increases the loss in the passband, and a technically satisfactory one cannot be obtained.
In addition, in order to obtain sufficient attenuation over a wide frequency without increasing the number of cascaded stages, there is a method of decreasing the resonator capacity by reducing the series arm braking capacity or increasing the parallel arm braking capacity. Although it is considered, the loss in the passband also increases.
[0007]
FIG. 7 is a connection diagram illustrating another example of the multistage constant K-type SAW filter, and FIG. 8 is a diagram illustrating the frequency characteristics of FIG.
This SAW filter is a filter in which a new SAW resonator 17 is connected to the end of the series arm of the SAW filter of FIG. When the SAW resonator 17 having a resonance frequency different from that of each series arm SAW resonator is connected, the attenuation pole having a different frequency is added as shown in FIG. Thus, although the attenuation amount in the attenuation region can be earned, there is a problem that the insertion loss in the pass region increases. Also in this case, the number of elements increases, and the chip size increases.
On the other hand, the document 2 describes a band rejection filter in which a plurality of series SAW resonators are connected as shown in FIG.
[0008]
FIG. 9 is a connection diagram illustrating a conventional band rejection filter, and FIG. 10 is a diagram illustrating the frequency characteristics of FIG.
In the filter of FIG. 9, a plurality of SAW resonators 11 1, 11 2, ..., 11 5 are connected as the series arm, the resonance frequency f 01 of the respective series-arm SAW resonator 11 1 to 11 5, f 02, f 03, f 04, f 05 are different from each other. In the frequency characteristics of the band-stopping filter to which the SAW resonators 11 1 to 11 5 of the series arm are connected, the attenuation poles of the SAW resonators 11 1 to 11 5 are all different and can be in a wide band attenuation range. When the braking capacities of these SAW resonators 11 1 to 11 5 are connected in series in the region, the entire braking capacity is reduced. Therefore, unless the logarithm of the SAW resonators 11 1 to 11 5 in series arms and the crossing length of each electrode are made very large, the insertion loss in the pass band increases. That is, there is a problem that the chip size is increased or the insertion loss is increased in the low pass band.
[0009]
[Means for Solving the Problems]
In order to solve the above problems, a first invention of the present invention is a one-terminal surface acoustic wave resonance formed by depositing a metal or alloy serving as an electrode on a piezoelectric or ferroelectric single crystal substrate. In a SAW filter in which a plurality of series arm SAW resonators and parallel arm SAW resonators each composed of a plurality of elements are connected in a multi-stage ladder shape and having a pass band and an attenuation band at predetermined positions of frequency, The configuration is as follows. That is, the resonance frequency of each series arm SAW resonator is shifted for each stage of the trapezoidal shape due to the difference in specific gravity of the metal or alloy serving as the electrode.
According to a second invention, in the SAW filter of the first invention, an electrode of one SAW resonator of the plurality of series arm SAW resonators is formed of a first metal, and the plurality of series arm SAW resonances. The electrodes of the other SAW resonators of the child are formed of an alloy in which a second metal having a higher specific gravity than the first metal is blended with the first metal.
[0010]
According to a third aspect of the present invention, in the SAW filter of the first or second aspect, the specific gravity of the metal forming the electrode of the series arm SAW resonator decreases from the first stage of the multistage ladder type to the subsequent stage. It is configured to do.
According to a fourth aspect of the present invention, the SAW filter of the fourth aspect is configured as follows.
That is, the ratio of the second metal in the alloy to be blended with the first metal is set to a coefficient corresponding to the specific gravity of the first metal according to the number of stages in the trapezoid of the SAW resonator. It is set as the ratio calculated | required by the following formula | equation which set it as (beta) and expressed an allowable error as (gamma).
(Α ± γ) / (specific gravity of the second metal / specific gravity of the first metal−1) × (frequency of attenuation region (MHz) × β) / (number of stages−1) [%]
[0011]
A fifth invention is the SAW filter of the second to fourth inventions, wherein the first metal is made of Al, and the second metal is made of a metal selected from metals having a specific gravity of 4-10. ing.
A sixth invention is the SAW filter of the second to fifth inventions, wherein the second metal is made of Ti, Sn, Ni or Cu.
According to a seventh aspect of the present invention, in the SAW filter of the fourth aspect, when the first metal is composed of the Al, the coefficient α is 0.4, the coefficient β is 0.6, and the error is 0. .05.
An eighth invention is the SAW filter of the first to seventh inventions, wherein the piezoelectric or ferroelectric single crystal substrate is composed of a LiNbO 3 single crystal substrate or a LiTaO 3 single crystal substrate.
[0012]
A ninth aspect of the SAW filter of the eighth invention, the LiTaO 3 single crystal substrate, the crystal orientation is the substrate of 36 ° Y-X or X-112 ° Y.
A tenth aspect of the invention is the SAW filter according to the eighth aspect of the invention, wherein the LiNbO 3 single crystal substrate is a substrate having a crystal orientation of 41 ° YX, 64 ° YX, or 128 ° YX.
According to the first to tenth aspects, the SAW filter is configured as described above.
The resonance frequencies of the plurality of series arm SAW resonators are shifted for each stage due to the difference in specific gravity of the metal serving as an electrode, the sound speed in each SAW resonator is changed, and the attenuation pole is shifted. For this reason, the attenuation range on the high frequency side of the passband is widened, and the above problem can be solved.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a connection diagram of a multistage SAW filter showing an embodiment of the present invention.
This multi-stage ladder-type SAW filter is formed by cascading 1-stage ladder-type SAW filters in four stages of first to fourth stages, and series-arm SAW resonators 21 1 , 21 2 , which are multi-stage ladder-type series arms. 21 3 and 21 4, and parallel arm SAW resonators 22 1 , 22 2 , 22 3 , and 22 4 serving as ladder-type parallel arms.
As shown in FIG. 3A, each series arm SAW resonance 21 1 to 21 4 is formed by vapor-depositing a metal serving as an electrode on the substrate, but the specific gravity of the metal forming these electrodes is changed. It has been. For example, the electrodes of the series arm SAW resonators 21 1 to 21 3 are made of an alloy of Al, which is a first metal, and Cu (copper), which is a second metal having a higher specific gravity, and the ratio of Cu Are, in order, 10.18%, 6.78%, and 3,39%. The series-arm SAW resonators 21 fourth electrode is formed of pure Al. On the other hand, the electrodes of the parallel arm SAW resonators 22 1 to 22 4 are all made of an alloy having a Cu content of 10.18%.
[0014]
FIGS. 11A to 11E are cross-sectional views illustrating an outline of the manufacturing process of the SAW filter of FIG.
The SAW filter of FIG. 1 is formed by performing the steps shown in FIGS. 11A to 11C and repeating the steps of FIGS. 11D and 11E.
First, in the process of FIG. 11A, for example, a LiTaO 3 single crystal substrate 31 having a crystal orientation of 36 ° Y-X is prepared, and a resist 32 is applied to the pattern formation surface of the substrate 31 by spin coating. In the step of FIG. 11B, an optical mask 33 is set on the substrate 31 coated with the resist 32, and the SAW filter pattern is transferred to the resist 32 by exposing with light 34.
[0015]
In the step of FIG. 11C, the resist 32 unnecessary for development is selectively removed. In the step of FIG. 11D, the formation region of the first-stage series arm SAW resonator 21 1 and the formation of the parallel arm SAW resonators 22 1 to 22 4 on the substrate 31 from which unnecessary resist 32 has been removed are formed. An alloy thin film 35 to be an electrode is deposited on the predetermined region. In the step of FIG. 11E, an unnecessary portion of the thin film 35 is removed together with the resist 32 using an organic solvent. Through the above steps, the first-stage series arm SAW resonator 21 1 and the parallel fourth stage arm SAW resonator 22 1-22 4 is formed. Thereafter, the steps of FIGS. 11D and 11E are repeated in order to form the series arm SAW resonators 21 2 to 21 4 of the other stages. However, as the thin film 35, the above-described alloys having different Cu contents and pure Al are used.
The multi-stage SAW filter of FIG. 1 having such a configuration has frequency characteristics set by the SAW resonators 21 1 to 21 4 and the SAW resonators 22 1 to 22 4 , and operates as a bandpass filter.
[0016]
FIG. 12 is a diagram illustrating frequency characteristics of the SAW filter of FIG. The band of FIG. 1 will be described with reference to FIG.
The resonance frequencies of the series arm SAW resonators 21 1 to 21 4 are frs 1 to frs 4 and the antiresonance frequencies are fas 1 to fas 4 , respectively. The resonance frequencies of the parallel arm SAW resonators 22 1 to 22 4 are Where Frp 1 to frp 4 and anti-resonance frequencies are fap 1 to fap 4 , respectively, these relationships are as follows.
frs 1 = fap 1
frs 2 > fap 2
frs 3 > fap 3
frs 4 > fap 4
frs 4 > frs 3 > frs 2 > frs 1
frp 4 = frp 3 = frp 2 = frp 1
fap 4 = fap 3 = fap 2 = fap 1
That is, in the first stage of the ladder type, the resonance frequency of the series arm SAW resonator 21 1 is equal to the anti-resonance frequency of the parallel arm SAW resonator 22 1 , and the resonance frequency of the series arm SAW resonator becomes the parallel arm in the subsequent stage. It becomes higher than the antiresonance frequency of the SAW resonator. Therefore, the first stage has a constant K-type configuration, but the second and subsequent stages are one-stage ladder filters having a wider band on the high frequency side than the constant K-type configuration.
[0017]
Here, since the entire SAW filter of FIG. 1 is formed by cascading the first-stage to fourth-stage first-stage ladder filters, attenuation determined by different resonance frequencies of the series arm SAW resonators 21 1 to 21 4 is provided. The pole will be synthesized. Even if the number of stages is not increased, the high-frequency attenuation range is widened as shown in FIG. Note that frs 2 ≠ fap 2 , frs 3 ≠ fap 3 , and frs 4 ≠ fap 4, and the insertion loss in the pass band is slightly increased by deviating from the condition of the constant K-type filter, but the frequency shift of each stage is increased. Since it is small, there is less loss degradation than increasing the number of stages.
That is, if the electrode of the SAW resonator is made of a metal heavier than Al (specific gravity 2.69), the sound speed in the SAW resonator is lower than that of Al, the resonance frequency is shifted to the lower side, and the attenuation region is also lower. Shift to the frequency of. In the SAW filter of FIG. 1, since the specific gravity of the electrode changes for each of the series arm SAW resonators 21 1 to 21 4 , the frequency of the attenuation pole set by these SAW resonators 21 1 to 21 4 is different. The attenuation range as a whole is expanded.
In the case where a LiTaO 3 single crystal substrate 22 having a crystal orientation of 36 ° Y-X has a four-stage structure and an attenuation region with a relative bandwidth of 2.84%, the series arm SAW resonators 21 2 to 21 in the second to fourth stages are obtained. When the relative bandwidths of 4 are shifted by 0.57%, an attenuation region having a desired bandwidth is obtained.
[0018]
For example, when h / λ (h is the film thickness and λ is the wavelength) is 0.1075, the Cu content in the electrodes of the SAW resonators 21 1 to 21 4 is 10.8%, respectively, as described above. When set to 78%, 3,39%, and 0%, an appropriate attenuation range is obtained. This corresponds to changing the ratio of the metal added to Al of the electrodes of the SAW resonators 21 1 to 21 3 by the amount expressed by the following equation (1).
α / ((specific gravity of metal added to Al / specific gravity of Al) −1) × (attenuation band (MHz) × β) / (number of stages−1) [%] (1)
However, α and β are coefficients when the specific gravity of Al is 2.69. Specifically, α is 0.4 and β is 0.6. It is practical to apply equation (1) by adding or subtracting about γ as an allowable error to α.
[0019]
As described above, in the present embodiment, in a multistage ladder type SAW filter which is connected to the SAW resonator 21 1 to 21 4, 22 1 to 22 4 to ladder type, serial arm SAW resonator other than the series-arm SAW resonators 21 4 Since the electrodes of the resonators are made of an alloy of Al and Cu having a specific gravity heavier than that of Al and the composition of the alloys of the SAW resonators 21 1 to 21 3 is changed in order, the sound speed of the resonators is different. As a result, the attenuation pole formed by each of the SAW resonators 21 1 to 21 4 shifts to a different frequency, and the attenuation region becomes wider. Therefore, the following advantages can be obtained.
(I) Even if the number of cascaded one-stage ladder filters is small, an attenuation region with a desired width can be obtained, and as a result, a low-loss filter can be realized.
(Ii) Since the attenuation region is widened, it is not necessary to provide a SAW resonator for forming an attenuation pole separately at the end of the series arm, and the chip size can be reduced.
(Iii) Since the specific gravity of the electrodes of the series arm SAW resonators 21 1 to 21 4 is changed, even if the resonators have the same logarithm and the same cross length, other unnecessary vibration modes or The frequency of the spurious mode such as the vertical or horizontal mode differs for each SAW resonator 21 1 to 21 4 , and the influence on the pass band and the attenuation band is small.
[0020]
(Iv) Compared to the case of the band rejection filter as shown in FIG. 9, it is not necessary to increase the logarithm and crossing length of the resonator, so that the chip size can be reduced.
(V) An increase in insertion loss on the low pass band side can be prevented as compared with the case of the band rejection filter as shown in FIG.
(Vi) For each of the series arm SAW resonators 21 1 to 21 4 , it can be realized only by changing the metal to be deposited, and no specially complicated process is required. Therefore, the conventional manufacturing equipment can be used as it is.
[0021]
In addition, this invention is not limited to the said embodiment, A various deformation | transformation is possible. Examples of such modifications include the following.
(1) The metal added to Al may be other than Cu, and may be Ti (titanium), Sn (tin), Ni (nickel), or Au (gold) in some cases, and the frequency change by comparing the specific gravity of Cu. If the calculation is performed and the mixing ratio is adjusted based on the calculation result, the same effects as in the above embodiment can be obtained.
(2) In forming the SAW filter, etching may be used instead of lift-off.
(3) The substrate 31 may be a LiNbO 3 single crystal substrate having a crystal orientation of 41 ° YX, 64 ° YX, or 128 ° YX, or a LiTaO 3 single crystal substrate having an X-112 ° Y. Good.
(4) The alloy forming the electrodes of the series arm SAW resonators 21 1 to 21 3 may not be an alloy in which the same metal is mixed with Al. The selection of Cu, Ti, Sn, Ni, and Au may be changed as appropriate.
[0022]
【The invention's effect】
As described above in detail, the first to tenth inventions are configured such that the resonance frequencies of the plurality of series arm SAW resonators are shifted for each stage depending on the specific gravity of the metal serving as an electrode. The speed of sound in each series arm SAW resonator changes and the attenuation pole shifts. Therefore, it is possible to widen the frequency band of the attenuation band set on the high frequency side of the pass band without sacrificing insertion loss or increasing the number of elements.
[Brief description of the drawings]
FIG. 1 is a connection diagram of a multi-stage ladder type SAW filter showing an embodiment of the present invention.
FIG. 2 is a diagram showing a structure and an equivalent circuit of a conventional SAW resonator.
FIG. 3 is an explanatory diagram showing the principle of a conventional one-stage constant K-type SAW filter.
FIG. 4 is a connection diagram showing a conventional multi-stage constant K-type SAW filter.
5 is a diagram showing a manufacturing process of the SAW filter of FIG. 4;
6 is a diagram showing frequency characteristics of the problem of the SAW filter of FIG. 4;
FIG. 7 is a connection diagram illustrating another example of a multistage constant K-type SAW filter.
FIG. 8 is a diagram illustrating the frequency characteristics of FIG.
FIG. 9 is a connection diagram showing a conventional band rejection filter.
10 is a diagram illustrating the frequency characteristics of FIG. 9. FIG.
11 is a cross-sectional view showing an outline of a manufacturing process of the SAW filter of FIG. 1;
12 is a diagram illustrating frequency characteristics of the SAW filter of FIG. 1;
[Explanation of symbols]
21 1 to 21 4 series arm SAW resonator 22 1 to 22 4 parallel arm SAW resonator 31 substrate 35 electrode

Claims (10)

圧電体或いは強誘電体単結晶基板上に電極となる金属或いは合金が蒸着されて形成された1端子対弾性表面波共振子でそれぞれ構成された複数の直列腕弾性表面波共振子及び並列腕弾性表面波共振子を多段の梯型に接続したフィルタであって、周波数の所定の位置に通過帯域と減衰帯域とを持つ弾性表面波フィルタにおいて、
前記各直列腕弾性表面波共振子の共振周波数は、前記電極となる金属或いは合金の比重の違いによって前記梯型の各段ごとにずれていることを特徴とする弾性表面波フィルタ。
A plurality of series-arm surface acoustic wave resonators and parallel arm elasticitys each composed of a one-terminal-pair surface acoustic wave resonator formed by depositing a metal or alloy serving as an electrode on a piezoelectric or ferroelectric single crystal substrate. A surface acoustic wave filter in which surface wave resonators are connected in a multi-stage ladder shape, and has a pass band and an attenuation band at predetermined positions of the frequency,
The surface acoustic wave filter according to claim 1, wherein the resonance frequency of each of the series arm surface acoustic wave resonators is shifted for each stage of the trapezoidal shape due to a difference in specific gravity of the metal or alloy serving as the electrode.
前記複数の直列腕弾性表面波共振子のうちの1つの弾性表面波共振子の電極は、第1の金属によって形成し、該複数の直列腕弾性表面波共振子のうちの他の弾性表面波共振子の電極は、該第1の金属に該第1の金属よりも比重が重い第2の金属を配合した合金よって形成したことを特徴とする請求項1記載の弾性表面波フィルタ。The electrode of one surface acoustic wave resonator among the plurality of series arm surface acoustic wave resonators is formed of a first metal, and the other surface acoustic wave among the plurality of series arm surface acoustic wave resonators. 2. The surface acoustic wave filter according to claim 1, wherein the resonator electrode is formed of an alloy in which the first metal is mixed with a second metal having a higher specific gravity than the first metal. 前記各直列腕弾性表面波共振子の電極を形成する金属の比重は、前記多段の梯型の第1段目から後段にいくに従って減少する構成にしたことを特徴とする請求項1または2記載の弾性表面波フィルタ。The specific gravity of the metal forming the electrode of each series arm surface acoustic wave resonator is configured to decrease from the first stage to the rear stage of the multi-stage ladder type. Surface acoustic wave filter. 前記合金において前記第2の金属を前記第1の金属に配合する割合は、前記弾性表面波共振子の前記梯型における段数に応じて、該第1の金属の比重に対応する係数をα及びβとすると共に許容誤差をγとして表した次の(1)式で求めた割合としたことを特徴とする請求項3記載の弾性表面波フィルタ。
(α±γ)/(第2の金属の比重/第1の金属の比重−1)
×(減衰域の周波数(MHz)×β)/(段数−1) [%]・・・(1)
In the alloy, the proportion of the second metal blended with the first metal depends on the number of steps of the surface acoustic wave resonator in the trapezoidal shape, and the coefficient corresponding to the specific gravity of the first metal is α and 4. The surface acoustic wave filter according to claim 3, wherein the ratio is obtained by the following equation (1) in which β and an allowable error are expressed as γ.
(Α ± γ) / (specific gravity of the second metal / specific gravity of the first metal−1)
× (Frequency of attenuation region (MHz) × β) / (number of stages−1) [%] (1)
前記第1の金属はAlで構成し、前記第2の金属は比重が4〜10の金属から選択された金属で構成したことを特徴とする請求項2、3または4記載の弾性表面波フィルタ。5. The surface acoustic wave filter according to claim 2, wherein the first metal is made of Al, and the second metal is made of a metal having a specific gravity of 4 to 10. . 前記第2の金属は、Ti、Sn、NiまたはCuで構成したことを特徴とする請求項2、3、4、または5記載の弾性表面波フィルタ。6. The surface acoustic wave filter according to claim 2, wherein the second metal is composed of Ti, Sn, Ni, or Cu. 前記第1の金属を前記Alで構成した場合の前記係数αは0.4とし、前記係数βは0.6とし、前記誤差は0.05としたことを特徴とする請求項4記載の弾性表面波フィルタ。5. The elasticity according to claim 4, wherein the coefficient α when the first metal is made of Al is 0.4, the coefficient β is 0.6, and the error is 0.05. Surface wave filter. 前記圧電体或は強誘電体単結晶基板は、LiNbO3 単結晶基板またはLiTaO3 単結晶基板で構成したことを特徴とする請求項1、2、3、4、5、6または7記載の弾性表面波フィルタ。8. The elastic material according to claim 1, wherein the piezoelectric or ferroelectric single crystal substrate comprises a LiNbO 3 single crystal substrate or a LiTaO 3 single crystal substrate. Surface wave filter. 前記LiTaO3 単結晶基板は、結晶方位が36°Y−XまたはX−112°Yであることを特徴とする請求項8記載の弾性表面波フィルタ。9. The surface acoustic wave filter according to claim 8, wherein the LiTaO 3 single crystal substrate has a crystal orientation of 36 ° YX or X-112 ° Y. 前記LiNbO3 単結晶基板は、結晶方位が41°Y−X、64°Y−Xまたは128°Y−Xであることを特徴とする請求項8記載の弾性表面波フィルタ。9. The surface acoustic wave filter according to claim 8, wherein the LiNbO 3 single crystal substrate has a crystal orientation of 41 ° YX, 64 ° YX, or 128 ° YX.
JP23889098A 1998-08-25 1998-08-25 Surface acoustic wave filter Expired - Fee Related JP4010664B2 (en)

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