JP4100841B2 - Contact thermal resistance measurement method - Google Patents
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- 238000000691 measurement method Methods 0.000 title description 14
- 239000000463 material Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 31
- 238000004458 analytical method Methods 0.000 claims description 30
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 65
- 239000002356 single layer Substances 0.000 description 17
- 238000005259 measurement Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000002648 laminated material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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Description
【０００１】
【発明の属する技術分野】
本発明は、積層材試料の特定層の熱抵抗をレーザフラッシュ法により高精度かつ簡便に測定解析する接触熱抵抗の測定法に関する。
【０００２】
【従来の技術】
積層材料の接触熱抵抗（Ｒ）は２枚の板の接触部における温度差（Δｔ）とこの接触部を通過する熱流速（ｑ）を用いて、次の（１）式により求められる。
Ｒ＝Δｔ／ｑ ・・・・（１）
従来技術の接触熱抵抗の測定はこの定義に従って行われている。試料Ａと試料Ｂが接触する場合の接触熱抵抗測定法について図４を用いて説明する。例として試料Ａを高温、試料Ｂを低温に保持した定常状態として試料Ａ、Ｂの温度及び温度勾配を熱電対で測定する。各試料内の温度勾配を線形と仮定して両試料の接触部における温度を試料Ａ内の温度勾配より求めた温度ｔA と試料Ｂ内の温度勾配より求めたｔB の差より接触部の温度差Δｔを求める。
Δｔ＝｜ｔA −ｔB ｜ ・・・・（２）
熱流速ｑは例えば試料Ａの熱伝導率ｋが既知とすると温度ｔ1 と温度ｔ2 の測定点間距離をＬA とすれば熱流速ｑは（３）式により求められる。
ｑ＝ｋ｜ｔ1 −ｔ2 ｜／ＬA ・・・・（３）
試料Ａ及び試料Ｂの間の接触熱抵抗は（２）式及び（３）式を（１）式に代入することにより求められる。
【０００３】
【発明が解決しようとする課題】
しかしこの方法は次の欠点が有り、簡便に測定することが難しい。
1)熱電対を複数本取付けるため、試料サイズは例えば２０ｃｍ角の正方形で厚さが５ｃｍ程度と大きくする必要があり、小試料では測定が難しい。
2)定常測定法のため高温になるほど温度制御が難しく、一般に２００〜３００℃程度が限界である。
3)測定に長時間を要すると共に熟練度を必要とする。
本発明はこのような事情に鑑みてなされたもので、微小試料でも広い温度範囲における接触熱抵抗を容易に測定できる接触熱抵抗の測定法を提供することを目的とする。
【０００５】
【課題を解決するための手段】
前記目的に沿う本発明に係る接触熱抵抗の測定法は、特定層の熱抵抗が不明で、その他の層の熱拡散率、体積熱容量、厚さが既知の多層材中の特定層の接触熱抵抗の測定法において、特定層の熱拡散率、体積熱容量、厚さを熱抵抗が異なるように設定した多層材の表面をレーザパルス光で照射して得られる裏面温度の理論データを作成し、理論データを用いて単一の材料と仮定したレーザフラッシュ法による熱拡散率とビオー数解析を行い、得られる熱拡散率と設定した熱抵抗による相関関係を明らかにすると共に、特定層を有する多層材の表面をレーザパルス光で照射して裏面温度変化を測定する手段を有するレーザフラッシュ装置を用いて測定した裏面温度データを単一の材料と仮定して熱拡散率とビオー数を求め、熱拡散率と、熱拡散率値及び熱抵抗の相関関係とから多層材の特定層の熱抵抗を求める。
これにより、多層材の中の特定層の熱抵抗を簡単に、しかも比較的高い精度で求めることができる。
【０００６】
【発明の実施の形態】
続いて、添付した図面を参照しつつ、本発明を具体化した実施の形態につき説明し、本発明の理解に供する。
ここに、図１は、本発明の一実施の形態に係る接触熱抵抗の測定法に用いるレーザフラッシュ装置の構成図、図２は同接触熱抵抗の測定法の多層材解析法によって得られた接触熱抵抗の解析例を示すグラフ、図３は同単層材解析法による熱拡散率と熱抵抗との関係を示すグラフである。
【０００７】
試料の熱物性値（熱拡散率、比熱等）を高温まで簡便に測定する方法として近年レーザフラッシュ法が普及している。例えば特開平８−７５６８７号、特開平８−２６１９６７号、特開平９−１５９６３１号の各公報に開示されているように、試料の熱拡散率、比熱及びビオー数等の熱定数の解析方法や測定方法として用いられている。本発明は接触熱抵抗の測定にこのレーザフラッシュ法を使用するものである。
図１に示すように、レーザフラッシュ法によって被測定試料の接触熱抵抗を測定するレーザフラッシュ装置１０は、任意波形のパルスを発生させることが可能なレーザパルス発生装置２０と、レーザパルス発生装置２０から発生したレーザパルスを照射させる被測定試料３０と、レーザパルス発生装置２０と被測定試料３０との間に設けたハーフミラー４０とを設けている。また、被測定試料３０の裏面温度を測定する測温装置５０と、被測定試料３０に照射したレーザパルスをハーフミラー４０を介して取り込むレーザパルス検出装置６０を設け、測温装置５０とレーザパルス検出装置６０からの信号データを取込んで裏面温度変化を求め、熱拡散率及びビオー数を決定する演算処理を行うコンピュータ７０と、データ及び演算結果を表示する出力装置８０とを設けている。
【０００８】
この方法は直径１０ｍｍ、厚さ数ｍｍ程度の試料の片面をパルス幅１ｍｓ程度のレーザ光で照射・加熱し、試料裏面の温度上昇を測定してこの試料の熱拡散率等を求めるものである。この方法は過渡応答測定法のため、試料を所定温度設定後の測定時間は数秒程度と極短時間である。
本発明はレーザフラッシュ法を使用した接触熱抵抗の測定に関する２つの方法に関するものである。それらは多層材解析法によるものと単層材解析法によるものであり、以下に説明する。
【０００９】
レーザフラッシュ法を用いた多層材解析法による接触熱抵抗の測定法について詳述する。まず多層材解析法による多層材の中で熱抵抗が不明な特定層の熱物性値を求める方法について説明する。ここに熱物性値は、熱拡散率、体積熱容量、及び熱伝導率である。この熱伝導率は熱拡散率、比熱、密度の積により求められ、また体積熱容量は比熱と密度の積である。従って熱伝導率は熱拡散率と体積熱容量の積となる。
レーザフラッシュ法を用いて多層材中の特定層の熱物性値を測定する方法は、次の手順による。この際、各層の厚さは既知であり、熱物性値は測定しようとする特定層以外の層の熱物性値は既知とする。また特定層は放射損失を表す無次元数のビオー数も未知とする。
1)レーザパルス光を多層材試料表面に照射し、試料裏面温度を赤外検出器で測定する。
2)レーザフラッシュ装置１０の測温装置５０で測定した試料裏面温度データと多層材裏面温度理論式で２乗偏差を構成する。なお、ビオー数によって表記される熱損失条件及びレーザパルスの任意の波形条件を含んだ場合のレーザパルスの温度応答の一般解を与える理論式Ｔは、特開平８−２６１９６７号公報あるいは特開平９−１５９６３１号公報に示されている。また、２乗偏差Ｄは測定した試料裏面温度をＥとすると、Ｄ＝Σ（Ｔ−Ｅ）2 で表される。
高温時等、試料からの放射損失が無視できない場合はビオー数を含む理論式とする。室温付近等試料からの放射損失が無視できる場合は、ビオー数の無い理論式としても良い。
3)２乗偏差は熱物性値不明層（特定層）の熱拡散率、体積熱容量及びビオー数の関数となるので、この熱拡散率と体積熱容量及びビオー数を変更して２乗偏差を計算し、この２乗偏差を最小とする熱拡散率、体積熱容量及びビオー数を求める。
4)特定層の熱拡散率と体積熱容量が求められるので、熱伝導率はこの熱拡散率と体積熱容量を積算することにより求める。
5)熱抵抗Ｒは次の（４）式で与えられるので、特定層の厚さＬ及び4)で求めた熱伝導率ｋを用いて熱抵抗Ｒが求められる。
Ｒ＝Ｌ／ｋ ・・・・（４）
【００１０】
この方法による測定は熱物性値既知層の熱物性値を用いた比較測定法に分類される。
熱物性値不明層（特定層）の厚さが熱物性値既知層の厚さに比較して薄くなりすぎると特定層に係わる情報が試料裏面温度データに少なくなり熱拡散率、体積熱容量の解析精度が落ちる。あるいは逆に熱物性値既知層の厚さが熱物性値不明層の厚さに比較して薄くなりすぎると試料裏面温度データに熱物性値既知層の情報が少なくなって熱物性値不明層の体積熱容量の解析精度が落ちる。
しかしこの方法により得られた熱拡散率と体積熱容量の積の熱伝導率は、これらの解析精度が落ちる領域でも精度よく求められるので（４）式による熱抵抗は熱物性値よりも広い範囲で精度よく求められる。
図２に３層材の第２層を接触層（特定層）とする試料の第２層の熱拡散率、体積熱容量、接触熱抵抗の解析例を示す。
これにより、第２層厚さの全厚さに対する割合が小さくなり、第２層の熱拡散率、体積熱容量の精度が下がる領域でも、第２層の熱抵抗は精度よく求められること、また多層材の全厚さに対する第２層（特定層）の厚さの割合が大きくなるにつれて第２層の情報が増加し、第２層の熱物性値、熱抵抗の解析精度が上がることがわかる。
【００１１】
次にレーザフラッシュ法を用いた単層材解析法による接触熱抵抗の測定法について詳述する。
この方法は、多層材の特定層を接触層とし、この接触層以外の層の熱物性値、厚さが既知の材料を対象とする。この方法による特定層の接触熱抵抗の測定法は次の通りである。
1)熱物性値が既知の層についてはその熱物性値と厚さを使用し、熱物性値不明層（特定層）には熱物性値と厚さを熱抵抗が種々異なるように設定して、多層材試料の表面をレーザパルス光で照射した場合の試料裏面温度の理論データを作成する。
作成する方法としては、多層材の表面にレーザパルス光を照射した場合の試料裏面温度の理論式を使用する。時間空間における理論式の場合はその式を用いて、またラプラス空間等における理論式の場合は時間空間への逆変換を行うことにより求める。
なお、特開平８−２６１９６７号公報あるいは特開平９−１５９６３１号公報には、ラプラス空間における試料裏面温度の理論式が数式１〜数式４として示されている。
2)この多層材理論データをレーザフラッシュ法の単層材解析法（例えばＪＩＳＲ１６１１）にて単層材（単一の材料）とした場合の熱拡散率値とビオー数を求める。
3)熱物性値不明層に設定した熱抵抗値と単層材解析法による熱拡散率値との相関関係を求める。
4)熱物性値不明層（特定層）がある測定試料の表面をレーザパレス光にて照射し、レーザフラッシュ装置１０の測温装置５０で測定した試料裏面温度データを単層材解析法にて解析し熱拡散率値とビオー数を求める。
5)この解析した熱拡散率値を3)で求めた相関関係に代入して熱物性値不明層の熱抵抗値を求める。
【００１２】
熱抵抗と単層材解析法による熱拡散率の相関関係の例を以下に示す。
表１は、検討した多層材を、中間層（第２層）が熱物性値不明層（特定層）とする３層材として、理論データ作成に使用した各層の熱物性値を示す。
【００１３】
【表１】
図３は、単層材解析法による熱拡散率と熱抵抗との相関関係を示し、第２層厚さを変更して異なる熱抵抗を設定した理論データに対して単層材解析法により求めた熱拡散率値を黒丸で示す。熱抵抗が大きくなるに従って単層材解析法で求める熱拡散率値は次第に小さくなる傾向が確認できる。
第２層の熱拡散率（α2 ）、比熱（Ｃ2 ）を表１に示す値（α20、Ｃ20）に対して熱抵抗が等しくなるように変更（例えば熱拡散率をＸ倍とすると同時に比熱をＸで割る。Ｘとして１．４、１．２、１／１．２、１／１．４を設定）した場合の単層材解析法による熱拡散率解析結果を白丸、また第２層厚さが１００μｍのデータに対し第２層の熱拡散率、比熱を別個に２倍あるいは１／２倍して熱抵抗を変更した場合の単層材解析法による熱拡散率解析結果を白丸で図３に示す。
これにより、熱抵抗が等しくなるように熱物性値を変えたものの単層材解析法による熱拡散率がほぼ等しいこと、及び熱抵抗を１／２倍又は２倍に設定する場合に厚さΔＬ2 を１００μｍから５０μｍ及び２００μｍに変更したもの（黒丸）と、熱拡散率又は比熱を２倍又は１／２倍したもの（白丸）とではほぼ同じ単層材解析法による熱拡散率を得ていることがわかる。第２層熱抵抗の各構成要素（熱拡散率、体積熱容量（＝比熱×密度）、厚さ）の寄与の違いにより同じ熱抵抗値でも単層材解析法による熱拡散率値に多少違いが見られるが、この方法で第２層の熱抵抗値をある程度の精度で測定可能である。
【００１５】
【発明の効果】
請求項１記載の接触熱抵抗の測定法においては、特定層の熱拡散率、体積熱容量、厚さを熱抵抗が異なるように設定した多層材の表面をレーザパルス光で照射して得られる裏面温度の理論データを作成し、理論データを用いて単一の材料と仮定した単層材解析法により熱拡散率とビオー数解析を行い、得られる熱拡散率と設定した熱抵抗による相関関係を明らかにすると共に、特定層を有する多層材の表面をレーザパルス光で照射して裏面温度変化を測定する手段を有するレーザフラッシュ装置を用いて測定した裏面温度データを単一の材料と仮定して熱拡散率とビオー数を求め、熱拡散率値と熱抵抗の相関関係から多層材の特定層の熱抵抗を求めるので、同様に測定に熟練を要することなく非常に簡便に高温まで測定でき、しかもレーザパルス光で照射可能な面積のある微小材料でも熱抵抗を測定することが可能で、比較的高い精度で求めることができる。
【図面の簡単な説明】
【図１】本発明の一実施の形態に係る接触熱抵抗の測定法に用いるレーザフラッシュ装置の構成図である。
【図２】同接触熱抵抗の測定法の多層材解析法によって得られた接触熱抵抗の解析例を示すグラフである。
【図３】同単層材解析法による熱拡散率と熱抵抗との関係を示すグラフである。
【図４】従来の熱抵抗測定法を説明する試料の側面図である。
【符号の説明】
１０：レーザフラッシュ装置、２０：レーザパルス発生装置、３０：被測定試料、４０：ハーフミラー、５０：測温装置、６０：レーザパルス検出装置、７０：コンピュータ、８０：出力装置[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a contact thermal resistance measurement method for measuring and analyzing the thermal resistance of a specific layer of a laminated material sample with high accuracy and simplicity by a laser flash method.
[0002]
[Prior art]
The contact thermal resistance (R) of the laminated material is obtained by the following equation (1) using the temperature difference (Δt) at the contact portion between the two plates and the heat flow rate (q) passing through the contact portion.
R = Δt / q (1)
Prior art contact thermal resistance measurements are made according to this definition. A contact thermal resistance measurement method in the case where the sample A and the sample B are in contact will be described with reference to FIG. As an example, the temperature and temperature gradient of samples A and B are measured with a thermocouple in a steady state where sample A is kept at a high temperature and sample B is kept at a low temperature. Assuming that the temperature gradient in each sample is linear, the temperature at the contact portion of both samples is determined from the difference between the temperature t A obtained from the temperature gradient in sample A and t B obtained from the temperature gradient in sample B. A temperature difference Δt is obtained.
Δt = | t A −t B | (2)
Heat flux q distance between, for example when the thermal conductivity k of the sample A is a known temperature t 1 and measurement point temperature t 2 L A Tosureba heat flux q is obtained by equation (3).
q = k | t 1 −t 2 | / L A (3)
The contact thermal resistance between the sample A and the sample B is obtained by substituting the equations (2) and (3) into the equation (1).
[0003]
[Problems to be solved by the invention]
However, this method has the following drawbacks and is difficult to measure easily.
1) Since a plurality of thermocouples are attached, the sample size must be, for example, a square of 20 cm square and a thickness of about 5 cm, and measurement is difficult with a small sample.
2) The temperature control becomes more difficult as the temperature becomes higher due to the steady measurement method, and generally about 200 to 300 ° C is the limit.
3) It takes a long time to measure and skill level.
The present invention has been made in view of such circumstances, and an object of the present invention is to provide a method for measuring contact thermal resistance that can easily measure contact thermal resistance in a wide temperature range even with a small sample.
[0005]
[Means for Solving the Problems]
The measurement method of contact thermal resistance according to the present invention in accordance with the above object is that the heat resistance of a specific layer is unknown, and the heat of diffusion of a specific layer in a multilayer material whose thermal diffusivity, volumetric heat capacity, and thickness of other layers are known is known. In the resistance measurement method, create the theoretical data of the back surface temperature obtained by irradiating the surface of the multilayer material with laser pulse light, the thermal diffusivity, volume heat capacity, thickness of the specific layer set so that the thermal resistance is different, Theoretical data is used to analyze the thermal diffusivity and biot number by the laser flash method, which is assumed to be a single material, to clarify the correlation between the obtained thermal diffusivity and the set thermal resistance, and to have a multilayer with a specific layer. Assuming that the back surface temperature data measured using a laser flash device with a means to measure the back surface temperature change by irradiating the surface of the material with laser pulse light is a single material, the thermal diffusivity and biot number are obtained. Diffusion rate and thermal diffusion Determining the thermal resistance of a particular layer of a multilayer material and a correlation between the value and heat resistance.
Thereby, the thermal resistance of the specific layer in the multilayer material can be obtained easily and with relatively high accuracy.
[0006]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described with reference to the accompanying drawings for understanding of the present invention.
Here, FIG. 1 is a block diagram of a laser flash apparatus used for the contact thermal resistance measurement method according to an embodiment of the present invention, and FIG. 2 is obtained by a multilayer material analysis method of the contact thermal resistance measurement method. FIG. 3 is a graph showing the relationship between thermal diffusivity and thermal resistance according to the single-layer material analysis method.
[0007]
In recent years, the laser flash method has become widespread as a method for simply measuring the thermophysical property values (thermal diffusivity, specific heat, etc.) of a sample to a high temperature. For example, as disclosed in JP-A-8-75687, JP-A-8-261967, and JP-A-9-159931, a method for analyzing a thermal constant such as a thermal diffusivity, specific heat, and biot number of a sample, It is used as a measurement method. The present invention uses this laser flash method to measure contact thermal resistance.
As shown in FIG. 1, a
[0008]
In this method, one side of a sample having a diameter of about 10 mm and a thickness of about several mm is irradiated and heated with a laser beam having a pulse width of about 1 ms, and the temperature rise on the back side of the sample is measured to obtain the thermal diffusivity of this sample. . Since this method is a transient response measurement method, the measurement time after setting the sample at a predetermined temperature is as short as several seconds.
The present invention relates to two methods for measuring contact thermal resistance using a laser flash method. They are based on the multilayer material analysis method and the single layer material analysis method, and will be described below.
[0009]
A method for measuring contact thermal resistance by a multilayer material analysis method using a laser flash method will be described in detail. First, a method for obtaining a thermal property value of a specific layer whose thermal resistance is unknown in the multilayer material by the multilayer material analysis method will be described. Here, the thermophysical values are thermal diffusivity, volumetric heat capacity, and thermal conductivity. This thermal conductivity is determined by the product of thermal diffusivity, specific heat and density, and volumetric heat capacity is the product of specific heat and density. Therefore, thermal conductivity is the product of thermal diffusivity and volumetric heat capacity.
The method for measuring the thermophysical value of a specific layer in a multilayer material using the laser flash method is as follows. At this time, the thickness of each layer is known, and the thermophysical property values of the layers other than the specific layer to be measured are known. In addition, the specific layer also assumes that the dimensionless number of biorepresentations of radiation loss is unknown.
1) Irradiate the surface of the multilayer material with laser pulse light, and measure the backside temperature of the sample with an infrared detector.
2) A square deviation is formed by the sample back surface temperature data measured by the temperature measuring device 50 of the
If radiation loss from the sample cannot be ignored, such as at high temperatures, use the theoretical formula including the biot number. If radiation loss from a sample such as around room temperature can be ignored, a theoretical formula without a biot number may be used.
3) Since the squared deviation is a function of the thermal diffusivity, volumetric heat capacity, and biot number of the layer with unknown thermophysical property value (specific layer), the squared deviation is calculated by changing this thermal diffusivity, volumetric heat capacity, and biot number. Then, the thermal diffusivity, volumetric heat capacity, and biot number that minimize this square deviation are obtained.
4) Since the thermal diffusivity and volumetric heat capacity of the specific layer are obtained, the thermal conductivity is obtained by integrating the thermal diffusivity and volumetric heat capacity.
5) Since the thermal resistance R is given by the following equation (4), the thermal resistance R is obtained using the thickness L of the specific layer and the thermal conductivity k obtained in 4).
R = L / k (4)
[0010]
The measurement by this method is classified as a comparative measurement method using the thermophysical value of the layer having a known thermophysical value.
If the thickness of the layer with unknown thermophysical property value (specific layer) becomes too thin compared to the layer with known thermophysical property value, the information related to the specific layer will be reduced in the sample backside temperature data, and analysis of thermal diffusivity and volumetric heat capacity The accuracy drops. Or, conversely, if the thickness of the layer with a known thermophysical value is too thin compared to the thickness of the layer with an unknown thermophysical value, information on the layer with a known thermophysical value is reduced in the sample back surface temperature data, and Analysis accuracy of volumetric heat capacity is reduced.
However, the thermal conductivity of the product of thermal diffusivity and volumetric heat capacity obtained by this method can be obtained with high precision even in the region where the analysis accuracy falls, so the thermal resistance according to equation (4) is in a wider range than the thermophysical value. It is required with high accuracy.
FIG. 2 shows an analysis example of the thermal diffusivity, volumetric heat capacity, and contact thermal resistance of the second layer of a sample in which the second layer of the three-layer material is the contact layer (specific layer).
As a result, the ratio of the second layer thickness to the total thickness is reduced, and the thermal resistance of the second layer can be obtained with high precision even in the region where the accuracy of the thermal diffusivity and volumetric heat capacity of the second layer is reduced. It can be seen that as the ratio of the thickness of the second layer (specific layer) to the total thickness of the material increases, the information of the second layer increases, and the analysis accuracy of the thermal property value and thermal resistance of the second layer increases.
[0011]
Next, a method for measuring contact thermal resistance by a single-layer material analysis method using a laser flash method will be described in detail.
In this method, a specific layer of a multilayer material is used as a contact layer, and a material whose thermophysical property value and thickness of layers other than the contact layer are known is targeted. The method for measuring the contact thermal resistance of a specific layer by this method is as follows.
1) For a layer with a known thermophysical value, use the thermophysical value and thickness. For a layer with a specific thermophysical value (specific layer), set the thermophysical value and thickness so that the thermal resistance varies. Then, theoretical data of the sample back surface temperature when the surface of the multilayer material sample is irradiated with laser pulse light is created.
As a preparation method, a theoretical formula of the sample back surface temperature when the surface of the multilayer material is irradiated with laser pulse light is used. In the case of a theoretical expression in time space, the expression is used, and in the case of a theoretical expression in Laplace space or the like, it is obtained by performing inverse transformation to time space.
In Japanese Patent Application Laid-Open No. 8-261967 or Japanese Patent Application Laid-Open No. 9-159631, the theoretical formulas of the sample back surface temperature in the Laplace space are shown as
2) Obtain the thermal diffusivity value and biot number when this multilayer material theoretical data is made into a single layer material (single material) by a single layer material analysis method (for example, JISR1611) of the laser flash method.
3) Find the correlation between the thermal resistance value set for the layer with unknown thermophysical property value and the thermal diffusivity value by the single-layer material analysis method.
4) Irradiate the surface of the sample with the thermophysical property unknown layer (specific layer) with laser palace light, and use the single layer material analysis method to measure the sample back surface temperature data measured by the temperature measuring device 50 of the
5) Substituting the analyzed thermal diffusivity value into the correlation obtained in 3), the thermal resistance value of the layer with unknown thermophysical property value is obtained.
[0012]
An example of the correlation between thermal resistance and thermal diffusivity by single layer material analysis is shown below.
Table 1 shows the thermophysical values of the respective layers used for the theoretical data preparation, assuming that the studied multilayer material is a three-layer material in which the intermediate layer (second layer) has a thermophysical property unknown layer (specific layer).
[0013]
[Table 1]
Fig. 3 shows the correlation between thermal diffusivity and thermal resistance by the single-layer material analysis method, and is obtained by the single-layer material analysis method for theoretical data in which the second layer thickness is changed and a different thermal resistance is set. The thermal diffusivity values are indicated by black circles. It can be confirmed that the thermal diffusivity value obtained by the single-layer material analysis method tends to gradually decrease as the thermal resistance increases.
Change the thermal diffusivity (α 2 ) and specific heat (C 2 ) of the second layer so that the thermal resistance becomes equal to the values (α 20 , C 20 ) shown in Table 1 (for example, the thermal diffusivity is X times At the same time, the specific heat is divided by X. If X, 1.4, 1.2, 1 / 1.2, 1/1. Thermal diffusivity analysis result by single layer material analysis method when thermal resistance is changed by separately doubling or halving the specific heat of the second layer for the data of the second layer thickness of 100μm Is shown by white circles in FIG.
Thus, the thickness ΔL is set when the thermal physical property value is changed so that the thermal resistance becomes equal, but the thermal diffusivity by the single layer material analysis method is almost equal, and the thermal resistance is set to 1/2 or 2 times. The heat diffusivity obtained by almost the same single-layer material analysis method is obtained for the case in which 2 is changed from 100 μm to 50 μm and 200 μm (black circle) and the one in which the thermal diffusivity or specific heat is doubled or halved (white circle). I understand that. Due to the difference in contribution of each component of the second layer thermal resistance (thermal diffusivity, volumetric heat capacity (= specific heat x density), thickness), the thermal diffusivity value by the single layer material analysis method is slightly different even with the same thermal resistance value. As can be seen, the thermal resistance value of the second layer can be measured with a certain degree of accuracy by this method.
[0015]
【The invention's effect】
In the measurement method of the thermal contact resistance according to
[Brief description of the drawings]
FIG. 1 is a configuration diagram of a laser flash device used in a method for measuring contact thermal resistance according to an embodiment of the present invention.
FIG. 2 is a graph showing an analysis example of contact thermal resistance obtained by a multilayer material analysis method of the contact thermal resistance measurement method.
FIG. 3 is a graph showing the relationship between thermal diffusivity and thermal resistance by the single-layer material analysis method.
FIG. 4 is a side view of a sample for explaining a conventional thermal resistance measurement method.
[Explanation of symbols]
10: Laser flash device, 20: Laser pulse generator, 30: Sample to be measured, 40: Half mirror, 50: Temperature measuring device, 60: Laser pulse detector, 70: Computer, 80: Output device
Claims (1)
前記特定層の熱拡散率、体積熱容量、厚さを熱抵抗が異なるように設定した前記多層材の表面をレーザパルス光で照射して得られる裏面温度の理論データを作成し、
該理論データを用いて単一の材料と仮定したレーザフラッシュ法による熱拡散率とビオー数解析を行い、
得られる前記熱拡散率と設定した熱抵抗による相関関係を明らかにすると共に、前記特定層を有する前記多層材の表面をレーザパルス光で照射して裏面温度変化を測定する手段を有するレーザフラッシュ装置を用いて測定した裏面温度データを単一の材料と仮定して熱拡散率とビオー数を求め、
該熱拡散率と、前記熱拡散率値及び熱抵抗の相関関係とから前記多層材の特定層の熱抵抗を求めることを特徴とする接触熱抵抗の測定法。In the method for measuring the contact thermal resistance of the specific layer in the multilayer material, in which the thermal resistance of the specific layer is unknown and the thermal diffusivity, volumetric heat capacity, and thickness of other layers are known,
Create the theoretical data of the back surface temperature obtained by irradiating the surface of the multilayer material with the laser pulse light, the thermal diffusivity, volume heat capacity, thickness of the specific layer set so that the thermal resistance is different,
Using the theoretical data, thermal diffusivity and biot number analysis by laser flash method assuming a single material,
A laser flash device comprising means for measuring a back surface temperature change by clarifying a correlation between the obtained thermal diffusivity and a set thermal resistance and irradiating the surface of the multilayer material having the specific layer with laser pulse light Assuming the backside temperature data measured using a single material, obtain the thermal diffusivity and biot number,
A method for measuring contact thermal resistance, wherein the thermal resistance of a specific layer of the multilayer material is obtained from the thermal diffusivity and the correlation between the thermal diffusivity value and thermal resistance.
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| CN101929968B (en) * | 2009-10-30 | 2012-07-18 | 中国计量科学研究院 | Device for measuring thermal diffusivity |
| US8236896B2 (en) | 2007-11-07 | 2012-08-07 | Mitsubishi Rayon Co., Ltd. | Powdery processing aid for polyolefin resins, method for producing the same, resin composition and shaped article |
| CN104634811A (en) * | 2013-11-13 | 2015-05-20 | 中国人民解放军海军工程大学 | Non-contact vibrationless low-temperature solid interface thermal resistance testing arrangement |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US8236896B2 (en) | 2007-11-07 | 2012-08-07 | Mitsubishi Rayon Co., Ltd. | Powdery processing aid for polyolefin resins, method for producing the same, resin composition and shaped article |
| CN101929968B (en) * | 2009-10-30 | 2012-07-18 | 中国计量科学研究院 | Device for measuring thermal diffusivity |
| CN104634811A (en) * | 2013-11-13 | 2015-05-20 | 中国人民解放军海军工程大学 | Non-contact vibrationless low-temperature solid interface thermal resistance testing arrangement |
| CN104634811B (en) * | 2013-11-13 | 2017-03-22 | 中国人民解放军海军工程大学 | Non-contact vibrationless low-temperature solid interface thermal resistance testing arrangement |
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