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JP4139020B2 - Capillary for wire bonding - Google Patents
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JP4139020B2 - Capillary for wire bonding - Google Patents

Capillary for wire bonding Download PDF

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Publication number
JP4139020B2
JP4139020B2 JP28683399A JP28683399A JP4139020B2 JP 4139020 B2 JP4139020 B2 JP 4139020B2 JP 28683399 A JP28683399 A JP 28683399A JP 28683399 A JP28683399 A JP 28683399A JP 4139020 B2 JP4139020 B2 JP 4139020B2
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Prior art keywords
capillary
mol
thermal expansion
coefficient
wire
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JP2001110841A (en
Inventor
健 岡村
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Kyocera Corp
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Kyocera Corp
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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/0711Apparatus therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/0711Apparatus therefor
    • H10W72/07141Means for applying energy, e.g. ovens or lasers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]

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  • Compositions Of Oxide Ceramics (AREA)
  • Wire Bonding (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は、半導体素子の電極とパッケージの電極パッド、または半導体素子の電極パッド同士を金等から成るワイヤでボンディングする際に用いるワイヤボンディング用キャピラリーに関する。
【0002】
【従来の技術】
従来、IC,LSI等の半導体素子をパッケージ内に収容した半導体デバイスにおいて、半導体素子の電極とパッケージ内の電極パッド間、半導体素子の電極間の導通接続は、ボンディングワイヤにより行なっている。そして、ワイヤボンディングを行なう際に、微細な径の金線等からなるワイヤを引き回して導くために、キャピラリー(細管)を使用している。
【0003】
このキャピラリーの材質としては、セラミック,金属,プラスチック,ガラス等の種々のものが試作されてきたが、現在は大部分セラミック製となっている。それは、セラミックは加工精度が高いため、キャピラリーの内径および外径の公差を0.1μm以下と高精度に加工することができ、またセラミックは摩擦係数が小さいためワイヤのキャピラリー内への挿入、キャピラリーからの送出が容易であり、さらに剛性が高く熱膨張係数が低いことから外部応力や温度変化に対して安定であり、耐蝕性にも優れているといった理由による。
【0004】
このようなキャピラリー用のセラミックとしては、近年、アルミナ(Al)セラミック,ジルコニア(ZrO)セラミックが用いられている。
【0005】
【発明が解決しようとする課題】
しかしながら、セラミックは金属に比べて一般に熱膨張率が小さいとはいえ、アルミナセラミックやジルコニアセラミックの10〜40℃での熱膨張率はそれぞれ5×10−6/℃,10×10−6/℃であり、近時のサブミクロンオーダーの高い形状精度要求に対しては不十分であった。例えば、雰囲気の気温変化により膨張、収縮を起こして変形し、他の部材との接合不良や接続損失を生じるといった問題があった。
【0006】
一方、熱膨張率が小さいセラミック材料としては、従来コーディエライト(2MgO・2Al・5SiO)が知られているが、コーディエライトは焼成温度範囲がきわめて狭いことから緻密な焼結体が得難く、よってコーディエライトのような緻密でない材料からなるキャピラリーを用いた場合、強度不足からキャピラリー自体が破損したり、また表面の平滑性に劣るためワイヤを破断するという問題点があった。
【0007】
従って、本発明は上記事情に鑑みて完成されたものであり、その目的は、所定の小さい熱膨張率および高い密度を有する材料からなるキャピラリーとすることで、形状精度に優れ、他の部材との接続不良および接続損失の発生を防止し、またキャピラリー自体の破損やワイヤの破断を防ぐものとすることにある。
【0008】
【課題を解決するための手段】
本発明のワイヤボンディング用キャピラリーは、10〜40℃での熱膨張率が2×10−6/℃以下であり、かつ密度が2.3g/cm以上であるMg,Al,Siの複合酸化物であって、該複合酸化物のモル比がxMgO・yAl・zSiO(但し、x=10〜40モル%、y=10〜40モル%、z=20〜80モル%、x+y+z=100モル%を満足する)で表されるとともに、主結晶相がコーディエライトであり、他の結晶相としてムライト,プロトエンスタタイト,クリノエンスタタイト,フォルステライト,クリストバライト,トリジマイトまたはサファリンが析出している誘電体磁器組成物から成ることを特徴とする。
【0009】
本発明は、上記構成により、従来のアルミナセラミック,ジルコニアセラミックよりも小さい熱膨張率を有し、緻密な誘電体磁器組成物からなるものとすることができ、その結果、雰囲気温度による熱変形が小さく緻密な材料からなることで、高精度の接合精度が得られ、接続不良および接続損失の発生が抑制でき、キャピラリー自体の破損およびワイヤの破断を防ぐことができる。
【0010】
また本発明のワイヤボンディング用キャピラリーにおいて、前記複合酸化物のモル比がxMgO・yAl・zSiO(但し、x=10〜40モル%、y=10〜40モル%、z=20〜80モル%、x+y+z=100モル%を満足する)で表されるとともに、主結晶相がコーディエライトであり、他の結晶相としてムライト,プロトエンスタタイト,クリノエンスタタイト,フォルステライト,クリストバライト,トリジマイトまたはサファリンが析出している誘電体磁器組成物から成ることを特徴とする。これにより、熱膨張率および緻密性の点でより優れたものとすることが可能となる。
【0011】
【発明の実施の形態】
本発明のワイヤボンディング用キャピラリーについて以下に説明する。図1,図2は本発明のワイヤボンディング用キャピラリーを模式的に示した断面図および斜視図であり、これらの図において、1はワイヤボンディング用キャピラリー(以下、キャピラリーという)、1aはキャピラリー1の中心軸方向に形成された、ワイヤを挿入および送出するための貫通孔、1bは貫通孔1aのワイヤ挿入側の端部に形成された、ワイヤの挿入を容易にするための円錐形部、1cはキャピラリー1のワイヤ送出側の外側面に形成された、ワイヤのガイド面であるテーパー部、1dはワイヤの送出側に形成された、ボンディングするワイヤの金属の容量と形状を制御する円錐形部、1eは円筒状の最大径部である。
【0012】
本発明のキャピラリー1は、図1に示すように、外形は円筒状の最大径部1eと、最大径部1eに連続する先端側の円錐状のテーパー部1cとから構成されているが、円筒状および円錐形状とする必要はなく、四角柱状および四角錘状等の多角柱状および多角錘状等とすることもできる。また、一般に、キャピラリー1全体の長さは10mm程度、最大径部1eの外径は0.8〜3mm程度、円錐状のテーパー部1cの最大径部1eの面に対する傾斜角は30°程度であり、貫通孔1aの直径は25〜40μm、円錐形部1bおよび円錐形部1dの傾斜角は60°程度、またワイヤの直径は25〜30μm程度である。
【0013】
本発明のキャピラリー1の材料である誘電体磁器組成物は、xMgO・yAl・zSiO(但し、x=10〜40モル%、y=10〜40モル%、z=20〜80モル%、x+y+z=100モル%を満足する)で表される複合酸化物を主成分とする。
【0014】
本発明のキャピラリー1用の誘電体磁器組成物の主成分の組成比を前記範囲に限定したのは、以下の理由による。即ち、MgOのモル%を示すxを10〜40モル%としたのは、10モル%未満では良好な焼結体が得られず密度が低下し、40モル%を超えると熱膨張率が大きくなる。特には、熱膨張率を1.5×10−6/℃以下にするという点で、xは15〜35モル%が望ましい。
【0015】
また、Alのモル%を示すyを10〜40モル%としたのは、yが10モル%よりも小さい場合には良好な焼結体が得られず密度が低下し、40モル%を超えると熱膨張率が大きくなるからである。特に、熱膨張率を1.5×10−6/℃以下にするという点で、17〜35モル%が望ましい。
【0016】
SiOのモル%を20〜80モル%としたのは、zが20モル%未満の場合には熱膨張率が大きくなり、80モル%を超えると良好な焼結体が得られず密度が低下する傾向にあるからである。特に、熱膨張率を1.5×10−6/℃以下にするという点で、30〜65モル%が望ましい。
【0017】
これらMgO,Al,SiOのモル%を各々示すx,y,zは、EPMA(Electron Probe Micro Analysis)法、XRD(X−ray Diffraction:X線回折)法等の分析方法で特定できる。
【0018】
本発明において、10〜40℃での熱膨張率を2×10−6/℃以下としたのは、2×10−6/℃を超えると、サブミクロンオーダーの高精度の接合精度が得られず、接続損失や接続不良を生じ易いからである。この熱膨張率は小さい法が望ましいが、特に10〜40℃での熱膨張率が1.5×10−6/℃以下であることが望ましい。
【0019】
また、本発明のキャピラリー1用の誘電体磁器組成物は、主結晶相がコーディエライト(3MgO・2Al・5SiO)であり、他の結晶相としてムライト(3Al・2SiO),プロトエンスタタイト{メタ珪酸マグネシウム(MgO・SiO)を主成分とするステアタイトの一種},クリノエンスタタイト{メタ珪酸マグネシウム(MgO・SiO)を主成分とするステアタイトの一種},フォルステタイト(2MgO・SiO),クリストバライト{珪酸(SiO)の一種},トリジマイト{珪酸(SiO)の一種},サファリン(Mg,Alの珪酸塩の一種)等が析出しているが、組成によってその析出相が異なる。
【0020】
本発明のキャピラリー1用の誘電体磁器は、以下のようにして製造する。原料粉末として、例えば、MgCO粉末,Al粉末,SiO粉末を用い、所定割合で秤量し、湿式混合した後乾燥し、この混合物を大気中において1100〜1300℃で仮焼した後、粉砕する。得られた粉末に適量のバインダを加えて成形し、この成形体を大気中1300〜1450℃で焼成することにより得られる。
【0021】
なお、本発明のキャピラリー1用の誘電体磁器組成物の主成分は、金属元素として、Mg,Al,Siからなり、10〜40℃での熱膨張率2×10−6/℃以下の特性を満足することを条件に、上記元素以外に粉砕ボールや原料粉末の不純物混入、焼結温度範囲の制御、機械的強度の向上を目的に、他の成分を含有してもよい。例えば、希土類元素化合物,Ba,Sr,Ca,Ni,Co,In,Ga,Zr,Ti,Nb,Ta,Cr,Mo,W,Mn,Cu,Zn,B,Ge,Sn等の酸化物、または窒化珪素等の窒化物,炭化珪素等の炭化物などの非酸化物である。また、これらは単独または複数種含有されていてもよい。
【0022】
かくして、本発明は、従来のアルミナセラミック,ジルコニアセラミックよりも小さい熱膨張率を有し、緻密な誘電体磁器組成物からなるものとすることができ、その結果、雰囲気温度による熱変形が小さく緻密な材料からなることで、高精度の接合精度が得られ、接続不良および接続損失の発生が抑制でき、さらにキャピラリー1自体の破損およびワイヤの破断を防ぐことができるという作用効果を有する。
【0023】
本発明のキャピラリー1は、上述した如く鋭利な先端部を有した中空状の形状であるので、緻密で熱膨張率の小さい特性が求められるものであれば、他の用途にも応用できる。例えば、ピペットの先端部品,シリンジ,真空ピンセットの先端部品等の種々の用途に応用できる。
【0024】
なお、本発明は上記実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲内で種々の変更を行うことは何ら差し支えない。
【0025】
【実施例】
本発明の実施例について以下に説明する。
【0026】
(実施例)
図1,図2のキャピラリー1を以下のように構成した。原料粉末として、純度99重量%のMgCO,純度99.7重量%のAl,純度99.4重量%のSiO粉末を用い、これらを焼結体と成した場合に表1の組成比となるように秤量し、15時間湿式混合した後、乾燥し、この混合物を大気中において1200℃,2時間仮焼した後粉砕した。なお、表1において、MgCOはMgO換算したものであり、表1中の熱膨張率は10〜40℃でのものである。
【0027】
得られた粉末に適量の樹脂バインダを加えて造粒し、これを成形して最終製品としての焼結体が、全体の長さが10mm,円筒状の最大径部1eの外径が0.8mm,貫通孔1aの直径が30μm,円錐形部1bの傾斜角が60°,円錐形部1dの傾斜角が60°となるようにした。この成形体を1300〜1450℃で2時間焼結してキャピラリー1を作製した。
【0028】
【表1】
【0029】
表1によれば、本発明のキャピラリー1用の誘電体磁器組成物は、10〜40℃での熱膨張率が2×10−6/℃以下と小さく、また密度は2.3g/cm以上と大きいものであり、他の部材との接続不良および接続損失の発生が抑制でき、キャピラリー1自体の破損およびワイヤの破断の発生が著しく減少した。
【0030】
【発明の効果】
本発明のワイヤボンディング用キャピラリーは、10〜40℃での熱膨張率が2×10−6/℃以下であり、かつ密度が2.3g/cm以上であるMg,Al,Siの複合酸化物であって、該複合酸化物のモル比がxMgO・yAl・zSiO(但し、x=10〜40モル%、y=10〜40モル%、z=20〜80モル%、x+y+z=100モル%を満足する)で表されるとともに、主結晶相がコーディエライトであり、他の結晶相としてムライト,プロトエンスタタイト,クリノエンスタタイト,フォルステライト,クリストバライト,トリジマイトまたはサファリンが析出している誘電体磁器組成物から成ることにより、従来のアルミナセラミック,ジルコニアセラミックよりも小さい熱膨張率を有し、緻密な誘電体磁器組成物からなり、その結果、雰囲気温度による熱変形が小さく、高精度の接合精度が得られ、接続不良および接続損失の発生が抑制でき、キャピラリー自体の破損およびワイヤの破断を防ぐことができるという作用効果を有する。
【0031】
また、本発明のワイヤボンディング用キャピラリーは、複合酸化物のモル比がxMgO・yAl・zSiO(但し、x=10〜40モル%、y=10〜40モル%、z=20〜80モル%、x+y+z=100モル%を満足する)で表されるとともに、主結晶相がコーディエライトであり、他の結晶相としてムライト,プロトエンスタタイト,クリノエンスタタイト,フォルステライト,クリストバライト,トリジマイトまたはサファリンが析出している誘電体磁器組成物から成ることにより、熱膨張率および緻密性の点でより優れたものとすることができる。
【図面の簡単な説明】
【図1】 本発明のキャピラリーの断面図である。
【図2】 本発明のキャピラリーの斜視図である。
【符号の説明】
1:キャピラリー
1a:貫通孔
1b:円錐形部
1c:テーパー部
1d:円錐形部
1e:最大径部
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a capillary for wire bonding used when bonding an electrode of a semiconductor element and an electrode pad of a package, or electrode pads of a semiconductor element with a wire made of gold or the like.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, in a semiconductor device in which a semiconductor element such as an IC or LSI is accommodated in a package, the conductive connection between the electrode of the semiconductor element and the electrode pad in the package and between the electrodes of the semiconductor element is performed by bonding wires. And when performing wire bonding, in order to draw and guide the wire which consists of a fine diameter gold wire etc., the capillary (fine tube) is used.
[0003]
Various materials such as ceramic, metal, plastic, and glass have been prototyped as the material of the capillary, but most of them are made of ceramic at present. Because ceramics have high processing accuracy, the tolerance of the inner and outer diameters of capillaries can be processed with a high accuracy of 0.1 μm or less, and because ceramics have a small friction coefficient, insertion of wires into capillaries, capillary This is because it is easy to deliver from the surface, has a high rigidity and a low coefficient of thermal expansion, is stable against external stress and temperature change, and has excellent corrosion resistance.
[0004]
In recent years, alumina (Al 2 O 3 ) ceramic and zirconia (ZrO) ceramic have been used as the ceramic for such capillaries.
[0005]
[Problems to be solved by the invention]
However, although ceramics generally have a smaller coefficient of thermal expansion than metals, the coefficients of thermal expansion of alumina ceramics and zirconia ceramics at 10 to 40 ° C. are 5 × 10 −6 / ° C. and 10 × 10 −6 / ° C., respectively. Therefore, it was insufficient for the recent demand for high form accuracy on the order of submicrons. For example, there has been a problem that deformation due to expansion and contraction is caused by a change in ambient temperature, resulting in poor connection with other members and connection loss.
[0006]
On the other hand, cordierite (2MgO · 2Al 2 O 3 · 5SiO 2 ) is conventionally known as a ceramic material having a low coefficient of thermal expansion, but cordierite has a very narrow firing temperature range, so it is densely sintered. When using a capillary made of a non-dense material such as cordierite, the capillary itself is damaged due to insufficient strength, or the wire is broken due to poor surface smoothness. It was.
[0007]
Therefore, the present invention has been completed in view of the above circumstances, and its purpose is to provide a capillary made of a material having a predetermined small coefficient of thermal expansion and high density, so that it has excellent shape accuracy and other members. It is intended to prevent the occurrence of connection failures and connection losses, and to prevent damage to the capillary itself and wire breakage.
[0008]
[Means for Solving the Problems]
The capillary for wire bonding of the present invention has a composite oxidation of Mg, Al, and Si having a coefficient of thermal expansion at 10 to 40 ° C. of 2 × 10 −6 / ° C. or less and a density of 2.3 g / cm 3 or more. The composite oxide has a molar ratio of xMgO.yAl 2 O 3 .zSiO 2 (where x = 10 to 40 mol%, y = 10 to 40 mol%, z = 20 to 80 mol%, x + y + z = 100 mol%), and the main crystal phase is cordierite, and mullite, protoenstatite, clinoenstatite, forsterite, cristobalite, tridymite or safarin is precipitated as the other crystal phases. It is characterized by comprising a dielectric ceramic composition.
[0009]
According to the above configuration, the present invention can be made of a dense dielectric ceramic composition having a smaller coefficient of thermal expansion than conventional alumina ceramics and zirconia ceramics. By being made of a small and dense material, it is possible to obtain high-precision joining accuracy, suppress the occurrence of connection failure and connection loss, and prevent damage to the capillary itself and wire breakage.
[0010]
In the capillary for wire bonding of the present invention, the molar ratio of the composite oxide is xMgO.yAl 2 O 3 .zSiO 2 (where x = 10 to 40 mol%, y = 10 to 40 mol%, z = 20 to 80 mol%, x + y + z = 100 mol%), and the main crystal phase is cordierite, and the other crystal phases are mullite, protoenstatite, clinoenstatite, forsterite, cristobalite, tridymite. Or it consists of a dielectric ceramic composition in which safarin is deposited. Thereby, it becomes possible to make it more excellent in terms of thermal expansion coefficient and denseness.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
The wire bonding capillary of the present invention will be described below. 1 and 2 are a cross-sectional view and a perspective view schematically showing a wire bonding capillary according to the present invention. In these drawings, 1 is a wire bonding capillary (hereinafter referred to as a capillary), 1a is a capillary 1 A through hole 1b is formed in the direction of the central axis for inserting and delivering a wire, 1b is a conical portion for facilitating the insertion of the wire, 1c formed at the end of the through hole 1a on the wire insertion side. Is a taper portion which is a guide surface of the wire formed on the outer surface of the capillary 1 on the wire delivery side, and 1d is a conical portion which is formed on the wire delivery side and controls the capacity and shape of the metal of the wire to be bonded. 1e is a cylindrical maximum diameter part.
[0012]
As shown in FIG. 1, the capillary 1 of the present invention is configured by a cylindrical maximum diameter portion 1 e and a conical tapered portion 1 c on the tip side continuous with the maximum diameter portion 1 e. It is not necessary to have the shape and the conical shape, and it may be a polygonal column shape such as a quadrangular prism shape and a quadrangular pyramid shape, a polygonal pyramid shape, and the like. In general, the length of the entire capillary 1 is about 10 mm, the outer diameter of the maximum diameter portion 1e is about 0.8 to 3 mm, and the inclination angle of the conical tapered portion 1c with respect to the surface of the maximum diameter portion 1e is about 30 °. The through hole 1a has a diameter of 25 to 40 μm, the inclination angle of the conical portion 1b and the conical portion 1d is about 60 °, and the diameter of the wire is about 25 to 30 μm.
[0013]
The dielectric ceramic composition which is the material of the capillary 1 of the present invention is xMgO.yAl 2 O 3 .zSiO 2 (where x = 10 to 40 mol%, y = 10 to 40 mol%, z = 20 to 80 mol) %, X + y + z = 100 mol%).
[0014]
The reason why the composition ratio of the main component of the dielectric ceramic composition for the capillary 1 of the present invention is limited to the above range is as follows. That is, x indicating 10% by mole of MgO is set to 10 to 40% by mole. If it is less than 10% by mole, a good sintered body cannot be obtained and the density is lowered, and if it exceeds 40% by mole, the coefficient of thermal expansion is large. Become. In particular, x is preferably 15 to 35 mol% in that the coefficient of thermal expansion is 1.5 × 10 −6 / ° C. or less.
[0015]
Further, the y representing 10% by mole of Al 2 O 3 was set to 10 to 40% by mole because when y was smaller than 10% by mole, a good sintered body could not be obtained and the density was lowered. It is because a thermal expansion coefficient will become large when it exceeds%. In particular, 17 to 35 mol% is desirable in that the coefficient of thermal expansion is 1.5 × 10 −6 / ° C. or less.
[0016]
The reason why the SiO 2 mol% is 20 to 80 mol% is that when z is less than 20 mol%, the coefficient of thermal expansion increases, and when it exceeds 80 mol%, a good sintered body cannot be obtained and the density is low. This is because it tends to decrease. In particular, 30 to 65 mol% is desirable in that the coefficient of thermal expansion is 1.5 × 10 −6 / ° C. or less.
[0017]
These x, y, and z, which indicate the mol% of MgO, Al 2 O 3 , and SiO 2 , are specified by an analysis method such as an EPMA (Electron Probe Micro Analysis) method or an XRD (X-ray Diffraction) method. it can.
[0018]
In the present invention, the coefficient of thermal expansion at 10 to 40 ° C. is set to 2 × 10 −6 / ° C. or less. If the coefficient of thermal expansion exceeds 2 × 10 −6 / ° C., a high precision joining accuracy of submicron order is obtained. This is because connection loss and connection failure are likely to occur. A method with a small coefficient of thermal expansion is desirable, but it is particularly desirable that the coefficient of thermal expansion at 10 to 40 ° C. is 1.5 × 10 −6 / ° C. or less.
[0019]
In the dielectric ceramic composition for the capillary 1 of the present invention, the main crystal phase is cordierite (3MgO · 2Al 2 O 3 · 5SiO 2 ), and the other crystal phase is mullite (3Al 2 O 3 · 2SiO). 2 ), Protoenstatite {a kind of steatite mainly composed of magnesium metasilicate (MgO · SiO 2 )}, Clinoenstatite {a kind of steatite mainly composed of magnesium metasilicate (MgO · SiO 2 )} , Forsterite (2MgO · SiO 2 ), cristobalite {a kind of silicic acid (SiO 2 )}, tridymite {a kind of silicic acid (SiO 2 )}, safarin (a kind of silicate of Mg and Al), etc. are deposited. However, the precipitation phase differs depending on the composition.
[0020]
The dielectric ceramic for the capillary 1 of the present invention is manufactured as follows. For example, MgCO 3 powder, Al 2 O 3 powder, and SiO 2 powder are used as raw material powders, weighed at a predetermined ratio, wet-mixed and then dried, and this mixture was calcined at 1100 to 1300 ° C. in the atmosphere. ,Smash. An appropriate amount of a binder is added to the obtained powder and molded, and the molded body is fired at 1300 to 1450 ° C. in the atmosphere.
[0021]
The main component of the dielectric ceramic composition for the capillary 1 of the present invention is composed of Mg, Al, Si as metal elements, and has a coefficient of thermal expansion of 2 × 10 −6 / ° C. or less at 10 to 40 ° C. In addition to the above elements, other components may be contained for the purpose of mixing impurities in the pulverized ball and raw material powder, controlling the sintering temperature range, and improving the mechanical strength. For example, rare earth element compounds, Ba, Sr, Ca, Ni, Co, In, Ga, Zr, Ti, Nb, Ta, Cr, Mo, W, Mn, Cu, Zn, B, Ge, Sn, and other oxides, Or it is non-oxides, such as nitrides, such as silicon nitride, and carbides, such as silicon carbide. These may be contained alone or in combination.
[0022]
Thus, the present invention can be made of a dense dielectric ceramic composition having a smaller coefficient of thermal expansion than conventional alumina ceramics and zirconia ceramics. By being made of such a material, it is possible to obtain high-precision joining accuracy, to suppress the occurrence of connection failure and connection loss, and to prevent the capillary 1 itself from being damaged and the wire from being broken.
[0023]
Since the capillary 1 of the present invention has a hollow shape with a sharp tip as described above, it can be applied to other applications as long as it has a dense and low thermal expansion property. For example, it can be applied to various applications such as pipette tip parts, syringes, vacuum tweezers tip parts, and the like.
[0024]
In addition, this invention is not limited to the said embodiment, A various change may be performed within the range which does not deviate from the summary of this invention.
[0025]
【Example】
Examples of the present invention will be described below.
[0026]
(Example)
The capillary 1 of FIGS. 1 and 2 was configured as follows. As raw material powders, 99 wt% of MgCO 3, purity 99.7 wt% Al 2 O 3, with a purity of 99.4 wt% of SiO 2 powder, in Table 1 when the form these sintered bodies The mixture was weighed so as to have a composition ratio, wet-mixed for 15 hours, then dried, and the mixture was calcined in the atmosphere at 1200 ° C. for 2 hours and then pulverized. In Table 1, MgCO 3 is in terms of MgO, and the thermal expansion coefficient in Table 1 is at 10 to 40 ° C.
[0027]
An appropriate amount of a resin binder is added to the obtained powder and granulated, and this is molded, and the sintered product as the final product has an overall length of 10 mm and an outer diameter of the cylindrical maximum diameter portion 1e of 0. 8 mm, the diameter of the through hole 1a is 30 μm, the inclination angle of the conical portion 1b is 60 °, and the inclination angle of the conical portion 1d is 60 °. This molded body was sintered at 1300 to 1450 ° C. for 2 hours to prepare a capillary 1.
[0028]
[Table 1]
[0029]
According to Table 1, the dielectric ceramic composition for the capillary 1 of the present invention has a small coefficient of thermal expansion of 2 × 10 −6 / ° C. or less at 10 to 40 ° C., and the density is 2.3 g / cm 3. As described above, connection failure with other members and occurrence of connection loss can be suppressed, and occurrence of breakage of the capillary 1 itself and breakage of the wire is remarkably reduced.
[0030]
【The invention's effect】
The capillary for wire bonding of the present invention has a composite oxidation of Mg, Al, and Si having a coefficient of thermal expansion at 10 to 40 ° C. of 2 × 10 −6 / ° C. or less and a density of 2.3 g / cm 3 or more. The composite oxide has a molar ratio of xMgO.yAl 2 O 3 .zSiO 2 (where x = 10 to 40 mol%, y = 10 to 40 mol%, z = 20 to 80 mol%, x + y + z = 100 mol%), and the main crystal phase is cordierite, and mullite, protoenstatite, clinoenstatite, forsterite, cristobalite, tridymite or safarin is precipitated as the other crystal phases. A dielectric material having a smaller coefficient of thermal expansion than that of conventional alumina ceramics and zirconia ceramics. Made of porcelain composition, as a result, thermal deformation due to ambient temperature is small, high accuracy of joining accuracy is obtained, connection failure and connection loss can be suppressed, and damage to the capillary itself and wire breakage can be prevented It has the effect of.
[0031]
In the capillary for wire bonding of the present invention, the molar ratio of the composite oxide is xMgO.yAl 2 O 3 .zSiO 2 (where x = 10 to 40 mol%, y = 10 to 40 mol%, z = 20 to 80 mol%, x + y + z = 100 mol%), and the main crystal phase is cordierite, and the other crystal phases are mullite, protoenstatite, clinoenstatite, forsterite, cristobalite, tridymite. Or it can be made more excellent in terms of coefficient of thermal expansion and denseness by comprising a dielectric ceramic composition in which safarin is deposited.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a capillary of the present invention.
FIG. 2 is a perspective view of a capillary of the present invention.
[Explanation of symbols]
1: Capillary 1a: Through hole 1b: Conical part 1c: Tapered part 1d: Conical part 1e: Maximum diameter part

Claims (1)

10〜40℃での熱膨張率が2×10−6/℃以下であり、かつ密度が2.3g/cm以上であるMg,Al,Siの複合酸化物であって、該複合酸化物のモル比がxMgO・yAl・zSiO(但し、x=10〜40モル%、y=10〜40モル%、z=20〜80モル%、x+y+z=100モル%を満足する)で表されるとともに、主結晶相がコーディエライトであり、他の結晶相としてムライトプロトエンスタタイト,クリノエンスタタイト,フォルステライト,クリストバライト,トリジマイトまたはサファリンが析出している誘電体磁器組成物から成ることを特徴とするワイヤボンディング用キャピラリー。A composite oxide of Mg, Al, and Si having a coefficient of thermal expansion at 10 to 40 ° C. of 2 × 10 −6 / ° C. or less and a density of 2.3 g / cm 3 or more, in the molar ratio xMgO · yAl 2 O 3 · zSiO 2 ( where, x = 10 to 40 mol%, y = 10 to 40 mol%, z = 20 to 80 mol%, x + y + z = satisfies 100 mol%) And a dielectric ceramic composition in which the main crystalline phase is cordierite and the other crystalline phases are precipitated as mullite , protoenstatite, clinoenstatite, forsterite, cristobalite, tridymite or safarin. A wire bonding capillary characterized by the above.
JP28683399A 1999-10-07 1999-10-07 Capillary for wire bonding Expired - Fee Related JP4139020B2 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9707734B2 (en) 2011-03-18 2017-07-18 Schaefer Kalk Gmbh & Co. Kg Microstructured composite particles

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4573146B2 (en) * 2000-04-14 2010-11-04 Toto株式会社 Cordierite black-based dense sintered body and manufacturing method thereof
JP5907369B2 (en) * 2011-09-29 2016-04-26 日立化成株式会社 Wiring device and method for manufacturing multi-wire wiring board using the same
CN112851320A (en) * 2014-06-06 2021-05-28 日本碍子株式会社 Cordierite sintered body, method for producing the same, composite substrate, and electronic device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9707734B2 (en) 2011-03-18 2017-07-18 Schaefer Kalk Gmbh & Co. Kg Microstructured composite particles

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