JP7804479B2 - Electrode-embedding member and method for manufacturing the same - Google Patents
Electrode-embedding member and method for manufacturing the sameInfo
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Description
本発明は、電極埋設部材、およびその製造方法に関する。 The present invention relates to an electrode-embedding member and a method for manufacturing the same.
従来、半導体製造装置用の部材としてセラミックス焼結体に電極が埋設されたサセプタ-、静電チャックまたはセラミックスヒータ等の電極埋設部材が提案されている。 Conventionally, electrode-embedded components such as susceptors, electrostatic chucks, and ceramic heaters, in which electrodes are embedded in a ceramic sintered body, have been proposed as components for semiconductor manufacturing equipment.
特許文献1には、導電部材にロウ材によって接合され、導電部材の平均線膨張係数以上の大きさの平均線膨張係数を有する第1の金属部材と、第1の金属部材より平均線膨張係数が大きい一又は複数の第2の金属部材と、第2の金属部材に接合され、第2の金属部材より平均線膨張係数が大きい金属端子とを含み、長期間使用してもセラミックス基材や導電部材にクラックが入ることを防止できるセラミックス構造体が開示されている。 Patent Document 1 discloses a ceramic structure that includes a first metal member joined to a conductive member with brazing material and having an average linear expansion coefficient equal to or greater than that of the conductive member, one or more second metal members having an average linear expansion coefficient greater than that of the first metal member, and a metal terminal joined to the second metal member and having an average linear expansion coefficient greater than that of the second metal member, and that can prevent cracks from occurring in the ceramic substrate or conductive member even after long-term use.
特許文献1が示すように、従来は電極埋設部材を構成する部材の線膨張係数に着目し、緩衝部材を間に介在させてロウ付けすることが行われてきた。すなわち力学的な観点から端子構造のクラック抑制がなされてきた。 As noted in Patent Document 1, conventionally, attention has been focused on the linear expansion coefficient of the materials that make up the electrode-embedded member, and soldering has been performed with a buffer material interposed between them. In other words, cracks in the terminal structure have been suppressed from a mechanical standpoint.
しかしながら、これらの構造を有する電極埋設部材を実際のプロセスで使用すると、環境からの酸素によって接続部材や緩衝部材の表面から内部へ酸化が進行し、これらの部材自身の強度劣化を引き起こしていた。すなわち化学的な腐食により強度劣化が生じていた。その結果、端子構造の強度が劣化し、端子の脱落や電気的な接触不良が生じていた。そこで、このような不具合を抑制できる端子構造が要望されていた。 However, when electrode-embedded components with these structures are used in actual processes, oxygen from the environment causes oxidation to progress from the surface to the interior of the connecting and buffering components, causing a deterioration in the strength of these components themselves. In other words, strength deterioration occurs due to chemical corrosion. As a result, the strength of the terminal structure deteriorates, causing the terminal to fall off or poor electrical contact. Therefore, there is a demand for a terminal structure that can prevent such problems.
本発明者らは、ロウ材に所定量以上のFeを含有させることで、電極埋設部材を酸素の存在する環境で使用しても接続部材や緩衝部材の劣化が起きにくく、端子構造の強度が低下しにくいことを見出し、本発明を完成させた。 The inventors discovered that by including a specified amount or more of Fe in the brazing material, deterioration of the connecting members and buffer members is less likely to occur even when the electrode-embedding member is used in an oxygen-containing environment, and the strength of the terminal structure is less likely to decrease, leading to the completion of this invention.
すなわち、本発明はこのような事情に鑑みてなされたものであり、接続部材や緩衝部材の劣化が起きにくく、端子構造の強度が低下しにくい電極埋設部材、およびその製造方法を提供することを目的とする。 In other words, the present invention was made in consideration of these circumstances, and aims to provide an electrode-embedding member that is less susceptible to deterioration of connecting members and buffer members and less likely to reduce the strength of the terminal structure, as well as a method for manufacturing the same.
(1) 上記の目的を達成するため、本発明の電極埋設部材は、電極埋設部材であって、セラミックス焼結体からなる平板状の基体と、前記基体に埋設された電極と、前記電極に電気的に接続され、前記基体に埋設された接続部材と、前記電極に電気を供給する端子と、前記接続部材および前記端子の間に配置される緩衝部材と、前記緩衝部材および前記端子を固定するロウ材と、を備え、前記ロウ材は、Auを主成分とし、前記ロウ材の表面から20μm以下の領域である表層にFeを4atoms%以上含み、前記ロウ材の前記表面にFeの酸化物が形成されていることを特徴としている。
(1) In order to achieve the above object, the present invention provides an electrode-embedding member comprising: a flat substrate made of a ceramic sintered body; an electrode embedded in the substrate; a connecting member electrically connected to the electrode and embedded in the substrate; a terminal for supplying electricity to the electrode; a buffer member disposed between the connecting member and the terminal; and a brazing material for fixing the buffer member and the terminal, wherein the brazing material is mainly composed of Au and contains 4 atoms% or more of Fe in a surface layer that is a region 20 μm or less from the surface of the brazing material , and an oxide of Fe is formed on the surface of the brazing material .
このように、ロウ付け後のロウ材の表層にFeを4atoms%以上含むことにより、接続部材や緩衝部材の酸化が抑制される。その結果、接続部材や緩衝部材の強度劣化が抑制され、端子構造の強度が維持される。 In this way, by including 4 atoms% or more of Fe in the surface layer of the brazing material after brazing, oxidation of the connecting members and buffer members is suppressed. As a result, deterioration in the strength of the connecting members and buffer members is suppressed, and the strength of the terminal structure is maintained.
このように、ロウ材の表面にFeの酸化物が形成されていることにより、接続部材や緩衝部材の酸化がより抑制される。 In this way, the formation of Fe oxide on the surface of the brazing material further suppresses oxidation of the connecting members and buffer members.
(2)また、本発明の電極埋設部材において、前記ロウ材は、前記ロウ材の表面に垂直な断面のEPMA分析またはEDX分析によるOとFeの特性X線の強度比において、前記ロウ材の表層での値が前記ロウ材の内部での値の2倍以上であることを特徴としている。
( 2 ) In addition, in the electrode-embedding member of the present invention, the brazing filler metal is characterized in that, in the intensity ratio of characteristic X-rays of O and Fe obtained by EPMA analysis or EDX analysis of a cross section perpendicular to the surface of the brazing filler metal, the value at the surface of the brazing filler metal is at least twice the value inside the brazing filler metal.
このように、ロウ材の表面に垂直な断面のEPMA分析またはEDX分析によるOとFeの特性X線の強度比において、ロウ材の表層での値がロウ材の内部での値の2倍以上であることにより、接続部材や緩衝部材の酸化がより抑制される。 In this way, the intensity ratio of the characteristic X-rays of O and Fe obtained by EPMA or EDX analysis of a cross section perpendicular to the surface of the brazing material shows that the value at the surface of the brazing material is at least twice the value inside the brazing material, thereby further suppressing oxidation of the connecting members and buffer members.
(3)また、本発明の電極埋設部材において、前記緩衝部材は、Feを含むことを特徴としている。
( 3 ) In the electrode-embedding member of the present invention, the buffer member contains Fe.
このように、緩衝部材がFeを含むことにより、ロウ材にFeが含まれない場合であっても、ロウ付け時にFeがロウ材に溶出して、結果的にロウ付け後のロウ材にFeが含まれることとなり、酸化膜等の原料とすることができる。 In this way, by including Fe in the buffer material, even if the brazing material does not contain Fe, Fe will dissolve into the brazing material during brazing, resulting in the brazing material containing Fe after brazing, which can be used as a raw material for oxide films, etc.
(4)また、本発明の電極埋設部材において、前記緩衝部材は、前記接続部材側に配置される第1の緩衝部材と、前記端子側に配置される第2の緩衝部材を含み、前記第2の緩衝部材は、Feを主成分とすることを特徴としている。
( 4 ) In addition, in the electrode embedding member of the present invention, the buffer member includes a first buffer member arranged on the connecting member side and a second buffer member arranged on the terminal side, and the second buffer member is characterized in that it has Fe as its main component.
このように、Feを主成分とする第2の緩衝部材を使用することにより、ロウ材にFeが含まれない場合であっても、ロウ付け後のロウ材に十分な量のFeが含まれることとなる。 In this way, by using a second buffer member whose main component is Fe, even if the brazing material does not contain Fe, the brazing material will contain a sufficient amount of Fe after brazing.
(5)また、本発明の電極埋設部材の製造方法は、電極埋設部材の製造方法であって、セラミックス焼結体からなる平板状の基体と、前記基体に埋設された電極と、前記電極に電気的に接続され、前記基体に埋設された接続部材と、を備え、前記接続部材の一方の主面の少なくとも一部が露出する端子穴が穿設された電極埋設部材前駆体を準備する準備工程と、緩衝部材および端子を準備し、前記緩衝部材および前記端子を前記電極埋設部材前駆体の前記端子穴に配置する配置工程と、Auを主成分とするロウ材を準備し、前記端子穴に配置された前記緩衝部材および前記端子を前記ロウ材を用いてロウ付けして固定するロウ付け工程と、を含み、前記ロウ付け工程後の前記ロウ材が前記ロウ材の表面から20μm以下の領域である表層にFeを4atoms%以上含むように、前記配置工程で準備する前記緩衝部材の成分および大きさもしくは前記ロウ材に接触する面積が調整され、または前記ロウ付け工程で準備する前記ロウ材の成分が調整され、前記ロウ付け工程後の前記ロウ材を加熱して、前記ロウ材の前記表面にFeの酸化物を形成することを特徴としている。
( 5 ) The method for manufacturing an electrode-embedding member of the present invention is a method for manufacturing an electrode-embedding member, comprising: a flat-plate-shaped substrate made of a ceramic sintered body; an electrode embedded in the substrate; and a connecting member electrically connected to the electrode and embedded in the substrate, the method comprising the steps of: preparing an electrode-embedding member precursor having a terminal hole formed therein through which at least a part of one main surface of the connecting member is exposed; preparing a buffer member and a terminal, and arranging the buffer member and the terminal in the terminal hole of the electrode-embedding member precursor; and preparing a brazing material mainly composed of Au, and arranging the buffer member and the terminal in the terminal hole. and a brazing step of brazing and fixing the buffer member and the terminal placed on the buffer member with the brazing material, wherein the components and size of the buffer member prepared in the placing step or the area in contact with the brazing material are adjusted, or the components of the brazing material prepared in the brazing step are adjusted , so that the brazing material after the brazing step contains 4 atoms% or more of Fe in a surface layer that is a region 20 μm or less from the surface of the brazing material, and the brazing material after the brazing step is heated to form an oxide of Fe on the surface of the brazing material .
このように、ロウ付け工程後のロウ材に表層にFeを4atoms%以上含むように、配置工程で準備する緩衝部材の成分および大きさもしくはロウ材に接触する面積が調整され、またはロウ付け工程で準備するロウ材の成分が調整されることで、電極埋設部材の使用中にロウ材の表面(外部環境との境界)にFeの酸化膜が形成され、接続部材や緩衝部材の酸化が抑制される。その結果、接続部材や緩衝部材の強度劣化が抑制され、端子構造の強度が維持される。 In this way, the composition and size of the buffer material prepared in the placement process or the area in contact with the buffer material are adjusted, or the composition of the buffer material prepared in the brazing process is adjusted, so that the surface layer of the brazing material after the brazing process contains 4 atoms% or more of Fe. This allows an Fe oxide film to form on the surface of the brazing material (at the boundary with the external environment) during use of the electrode-embedding member, suppressing oxidation of the connecting member and buffer material. As a result, deterioration in the strength of the connecting member and buffer material is suppressed, and the strength of the terminal structure is maintained.
本発明によれば、接続部材や緩衝部材の劣化が起きにくく、端子構造の強度が低下しにくい電極埋設部材を構成することができる。 This invention makes it possible to construct an electrode-embedding component that is less susceptible to deterioration of connection members and buffer members, and less likely to reduce the strength of the terminal structure.
次に、本発明の実施の形態について、図面を参照しながら説明する。説明の理解を容易にするため、各図面において同一の構成要素に対しては同一の参照番号を付し、重複する説明は省略する。なお、構成図において、各構成要素の大きさは概念的に表したものであり、必ずしも実際の寸法比率を表すものではない。 Next, an embodiment of the present invention will be described with reference to the drawings. To facilitate understanding, the same reference numbers will be used in each drawing to refer to the same components, and duplicate explanations will be omitted. Note that in the structural diagrams, the size of each component is shown conceptually and does not necessarily represent the actual dimensional ratio.
[実施形態]
[電極埋設部材の構成]
まず、本実施形態に係る電極埋設部材の構成を説明する。図1は、実施形態に係る電極埋設部材の一例を示す断面図である。また、図2は、図1の電極埋設部材の端子構造を拡大して示した部分断面図である。本実施形態に係る電極埋設部材100は、基体110と、電極120と、接続部材130と、端子140と、緩衝部材150と、ロウ材160とを備える。電極埋設部材100は、ヒーター、静電チャック等に適用される。
[Embodiment]
[Configuration of electrode-embedded member]
First, the configuration of an electrode-embedding member according to this embodiment will be described. Fig. 1 is a cross-sectional view showing an example of an electrode-embedding member according to this embodiment. Fig. 2 is a partial cross-sectional view showing an enlarged terminal structure of the electrode-embedding member of Fig. 1. An electrode-embedding member 100 according to this embodiment includes a base 110, an electrode 120, a connecting member 130, a terminal 140, a buffer member 150, and a brazing material 160. The electrode-embedding member 100 is applicable to heaters, electrostatic chucks, etc.
基体110は、セラミックス焼結体からなり、平板状に形成され、一方の主面に基板を載置する載置面112を有する。基体110の材質は、用途に応じて様々な材料を使用することができる。例えば、AlN、Al2O3、Si3N4、SiCなどを使用することができる。また、基体110の形状は、円板状、多角形状、楕円状など、様々な形状にすることができる。 The base 110 is made of a ceramic sintered body, is formed in a flat plate shape, and has a mounting surface 112 on one main surface for mounting a substrate. Various materials can be used for the base 110 depending on the application. For example, AlN, Al2O3 , Si3N4 , SiC , etc. can be used. The shape of the base 110 can be various, such as a disk, a polygonal shape, or an elliptical shape.
電極120は、基体110に埋設される。電極120は、Mo、Wなどで形成することができる。電極120は、ワイヤーを織り込んだメッシュで形成されることが好ましい。また、メッシュを形成するワイヤーは、線径が0.02mm以上0.15mm以下であることが好ましい。このように、十分に細いワイヤーで電極120を構成することで、焼結時にワイヤーに圧裂が生じる虞をより低減することができ、また、電極120の上部のセラミックスを薄い絶縁層として構成しても、絶縁層にクラックを生じさせる虞をより低減させることができる。 The electrode 120 is embedded in the substrate 110. The electrode 120 can be made of Mo, W, or the like. The electrode 120 is preferably made of a mesh woven with wire. The wire forming the mesh preferably has a diameter of 0.02 mm or more and 0.15 mm or less. By constructing the electrode 120 from sufficiently thin wire in this way, the risk of the wire cracking during sintering can be further reduced. Furthermore, even if the ceramic on top of the electrode 120 is constructed as a thin insulating layer, the risk of cracks occurring in the insulating layer can be further reduced.
基体110は、複数の電極を備えていてもよい。例えば、ヒーター用電極と静電吸着用電極とを備えることで、電極埋設部材100は、ヒーター付静電チャックとして使用できる。 The base 110 may be provided with multiple electrodes. For example, by providing a heater electrode and an electrostatic attraction electrode, the electrode-embedded member 100 can be used as a heater-equipped electrostatic chuck.
接続部材130は、電極120に電気的に接続され、基体110に埋設される。これにより、接続部材130を介して電極120に電気を供給できる。接続部材130は、Mo、Wなどで形成することができる。 The connection member 130 is electrically connected to the electrode 120 and embedded in the base 110. This allows electricity to be supplied to the electrode 120 via the connection member 130. The connection member 130 can be made of Mo, W, or the like.
接続部材130の厚みは、0.2mm以上5mm以下であることが好ましい。0.2mmより小さい場合、基体110に端子140を接続するための端子穴142を穿設する際に、破損する虞が増大する。5mmより大きい場合、接続部材130は基体110に埋設されているため、基体110のセラミックスとの焼成時の収縮率の差や使用時の熱膨張率の差によって、基体110にクラックが入る虞が増大する。 The thickness of the connecting member 130 is preferably 0.2 mm or more and 5 mm or less. If it is less than 0.2 mm, there is an increased risk of breakage when drilling the terminal holes 142 for connecting the terminals 140 to the base 110. If it is more than 5 mm, because the connecting member 130 is embedded in the base 110, there is an increased risk of cracks occurring in the base 110 due to differences in the contraction rate between the connecting member 130 and the ceramic of the base 110 during firing and the thermal expansion rate during use.
端子140は、図示しない外部電源と接続され、電極120に電気を供給する。端子140は、Niなどで形成することができる。端子140は、ロウ材160によって電極120、接続部材130、または緩衝部材150と電気的に接続されると共に、固定される。 The terminal 140 is connected to an external power source (not shown) and supplies electricity to the electrode 120. The terminal 140 can be made of Ni or other materials. The terminal 140 is electrically connected to and fixed in place by the brazing material 160 to the electrode 120, the connecting member 130, or the buffer member 150.
緩衝部材150は、接続部材130および端子140の間に配置される。接続部材130および端子140の間に配置されるとは、電極埋設部材100の接続部材130の下面より下側かつ端子140の上端より上側の領域に緩衝部材150が配置されることをいう。接続部材130の下面と緩衝部材150の上面の間、および緩衝部材150の下面と端子140の上端の間は、それぞれロウ材160が存在することが好ましい。 The buffer member 150 is disposed between the connection member 130 and the terminal 140. Disposed between the connection member 130 and the terminal 140 means that the buffer member 150 is disposed in an area of the electrode-embedding member 100 below the lower surface of the connection member 130 and above the upper end of the terminal 140. It is preferable that brazing material 160 be present between the lower surface of the connection member 130 and the upper surface of the buffer member 150, and between the lower surface of the buffer member 150 and the upper end of the terminal 140.
緩衝部材150は、例えば、W、Mo、コバール、インバー、スーパーインバー、ニレジストなどで形成することができる。緩衝部材150の厚みは、0.2mm以上2mm以下であることが好ましい。 The buffer member 150 can be formed from, for example, W, Mo, Kovar, Invar, Super Invar, or Niresist. The thickness of the buffer member 150 is preferably 0.2 mm or more and 2 mm or less.
接続部材130と緩衝部材150は、同一の材料で構成されてもよい。このようにすることで、接続部材130は基体110に埋設されて焼成されるため脆化しているが、接続部材130と緩衝部材150との膨張率差はほとんどないので、接続部材130に応力が働きにくくなるため、接続部材130が破損しにくくなる。一方、緩衝部材150と端子140間では膨張係数差があるものの、ロウ付け時には緩衝部材150は位置が固定されず流動的であるため、緩衝部材150と端子140間の応力は、発生しにくくなる。これにより、力学的な観点から端子構造のクラック抑制を図ることができる。 The connecting member 130 and the buffer member 150 may be made of the same material. By doing so, the connecting member 130 is embrittled because it is embedded in the base 110 and fired, but because there is almost no difference in the expansion coefficients between the connecting member 130 and the buffer member 150, stress is less likely to act on the connecting member 130, making the connecting member 130 less likely to break. On the other hand, although there is a difference in the expansion coefficients between the buffer member 150 and the terminal 140, the buffer member 150 is not fixed in position during brazing and is fluid, so stress is less likely to occur between the buffer member 150 and the terminal 140. This makes it possible to suppress cracks in the terminal structure from a mechanical standpoint.
接続部材130と緩衝部材150は、異なる材料で構成されてもよい。この場合、接続部材130、緩衝部材150、および端子140の線膨張係数を順に大きくすることが好ましい。このようにすることで、力学的な観点から端子構造のクラック抑制を図ることができる。線膨張係数を順に大きくするとは、2つの部材の線膨張係数が等しい場合を含む。 The connecting member 130 and the buffer member 150 may be made of different materials. In this case, it is preferable to increase the linear expansion coefficients of the connecting member 130, buffer member 150, and terminal 140 in that order. This can help prevent cracks in the terminal structure from a mechanical standpoint. Increasing the linear expansion coefficients in this order also includes cases where the linear expansion coefficients of the two members are equal.
図3は、実施形態に係る電極埋設部材100の変形例の端子構造を拡大して示した部分断面図である。図3に示されるように、緩衝部材150は、接続部材130側に配置される第1の緩衝部材151と、端子140側に配置される第2の緩衝部材152を含んで構成されることが好ましい。この場合、接続部材130、第1の緩衝部材151、第2の緩衝部材152、および端子140の線膨張係数を順に大きくすることが好ましい。これにより、力学的な観点から端子構造のクラック抑制を図ることができる。 Figure 3 is a partial cross-sectional view showing an enlarged view of the terminal structure of a modified example of the electrode-embedding member 100 according to the embodiment. As shown in Figure 3, the buffer member 150 preferably includes a first buffer member 151 arranged on the connecting member 130 side and a second buffer member 152 arranged on the terminal 140 side. In this case, it is preferable to increase the linear expansion coefficients of the connecting member 130, first buffer member 151, second buffer member 152, and terminal 140 in that order. This makes it possible to suppress cracks in the terminal structure from a mechanical standpoint.
また、緩衝部材150が第1の緩衝部材151と第2の緩衝部材152を含んで構成される場合、接続部材130と第1の緩衝部材151を同一の材料で構成して、第1の緩衝部材151、第2の緩衝部材152、および端子140の線膨張係数を順に大きくしてもよい。 Furthermore, when the buffer member 150 is configured to include a first buffer member 151 and a second buffer member 152, the connecting member 130 and the first buffer member 151 may be configured from the same material, and the linear expansion coefficients of the first buffer member 151, the second buffer member 152, and the terminal 140 may increase in that order.
ロウ材160は、緩衝部材150および端子140を固定する。ロウ材160は、接続部材130、端子140、または緩衝部材150間を相互に電気的に接続する。 The brazing material 160 secures the buffer member 150 and the terminal 140. The brazing material 160 electrically connects the connecting member 130, the terminal 140, or the buffer member 150 to each other.
ロウ材160は、Auを主成分とし、表層にFeを4atoms%以上含む。これにより、電極埋設部材100の使用中にロウ材160の表面(外部環境との境界)にFeの酸化膜が形成されやすく、または、Feが選択的に酸素と結合されるため、接続部材130や緩衝部材150の酸化が抑制される。その結果、接続部材130や緩衝部材150の強度劣化が抑制され、端子構造の強度が維持される。 The brazing material 160 is primarily composed of Au, with the surface layer containing 4 atoms% or more of Fe. This makes it easier for an oxide film of Fe to form on the surface of the brazing material 160 (at the boundary with the external environment) during use of the electrode-embedding member 100, or because the Fe selectively bonds with oxygen, oxidation of the connecting member 130 and buffer member 150 is suppressed. As a result, deterioration in the strength of the connecting member 130 and buffer member 150 is suppressed, and the strength of the terminal structure is maintained.
ロウ材160がAuを主成分とするとは、ロウ材160に含まれるAuの濃度が80wt%以上であることをいう。また、ロウ材160が表層にFeを4atoms%以上含むとは、ロウ付け後のロウ材160の表層(ロウ材160の表面から20μm以下の領域)のロウ材160に含まれる金属Fe換算の濃度が4atoms%以上であることをいう。これにより、電極埋設部材100の使用中にロウ材160の表面にFeの酸化膜がより形成されやすくなる。 The brazing material 160 being primarily composed of Au means that the concentration of Au contained in the brazing material 160 is 80 wt% or more. Furthermore, the brazing material 160 containing 4 atoms% or more of Fe in the surface layer means that the concentration of metallic Fe contained in the brazing material 160 in the surface layer of the brazing material 160 after brazing (a region 20 μm or less from the surface of the brazing material 160) is 4 atoms% or more. This makes it easier for an oxide film of Fe to form on the surface of the brazing material 160 during use of the electrode-embedding member 100.
ロウ材160に含まれるFeは、ロウ付け前にロウ材160に添加されていてもよい。これにより、所定量のFeをロウ材160に含ませることが容易になる。ロウ付け前にロウ材160にFeを添加する場合、他の部材からのFeの溶出を考慮しない状況であるときは、例えば、内割で0.16wt%以上10wt%以下の所定の濃度となるように添加することが好ましい。 The Fe contained in the brazing material 160 may be added to the brazing material 160 before brazing. This makes it easier to include a predetermined amount of Fe in the brazing material 160. When adding Fe to the brazing material 160 before brazing, if the leaching of Fe from other components is not a consideration, it is preferable to add Fe to the brazing material 160 to achieve a predetermined concentration of, for example, 0.16 wt% or more and 10 wt% or less.
また、ロウ材160に含まれるFeは、ロウ付け時にロウ材160に他の部材から溶出され、ロウ付け後にロウ材160に含まれるようにしてもよい。ロウ付け時にロウ材160に溶出されたFeであっても、電極埋設部材100の使用中のFeの酸化膜の形成や、酸素との選択的な結合は同様に起こるためである。 Furthermore, the Fe contained in the brazing material 160 may be dissolved from other components into the brazing material 160 during brazing, and then contained in the brazing material 160 after brazing. This is because even if the Fe is dissolved into the brazing material 160 during brazing, the formation of an oxide film on the Fe and selective bonding with oxygen will still occur during use of the electrode-embedded member 100.
ロウ付け時にロウ材160にFeが溶出されるように構成する場合、ロウ材160に元々含まれ、または添加されるFeの量は0であり、ロウ付け後のロウ材160に含まれるFeの全量が他の部材から溶出されたFeとなるように構成してもよい。また、狙いとする量より少ない量のFeが含まれ、または添加され、他の部材から溶出されたFeによって不足量が補われるように構成してもよい。 When configuring the brazing material 160 so that Fe is eluted during brazing, the amount of Fe originally contained in or added to the brazing material 160 may be zero, and the entire amount of Fe contained in the brazing material 160 after brazing may be Fe eluted from other components. Alternatively, the brazing material 160 may be configured so that a smaller amount of Fe is contained or added than the target amount, with the shortfall being made up by Fe eluted from other components.
ロウ付け時にロウ材160にFeが溶出されるように構成する場合、Feを供給する他の部材は、緩衝部材150であることが好ましい。すなわち、緩衝部材150は、Feを含むことが好ましい。このように、緩衝部材150がFeを含むことにより、ロウ材160にFeが含まれない場合であっても、ロウ付け時にFeがロウ材に溶出して、結果的にロウ付け後のロウ材160にFeが含まれることとなり、酸化膜等の原料とすることができる。この場合、ロウ付け後のロウ材160に狙いとする量のFeが含まれるようにするため、緩衝部材150に含まれるFeの濃度、緩衝部材150の大きさ、ロウ材160に接触する面積等を調整する必要がある。緩衝部材150をFeを含む構成にする場合、緩衝部材150は、例えば、Feを添加したW、Feを添加したMoのほかコバール、インバー、スーパーインバー、ニレジストなどのNiを含有した合金で形成することができる。Niを含有するとFeのロウ材への溶出が容易化するためである。 When the buffer member 150 is configured to leach Fe into the brazing material 160 during brazing, the other component that supplies Fe is preferably the buffer member 150. That is, the buffer member 150 preferably contains Fe. By including Fe in the buffer member 150, even if the brazing material 160 does not contain Fe, Fe is leached into the brazing material during brazing. As a result, the brazing material 160 after brazing contains Fe, which can be used as a raw material for oxide films, etc. In this case, to ensure that the brazing material 160 contains the desired amount of Fe after brazing, it is necessary to adjust the Fe concentration in the buffer member 150, the size of the buffer member 150, the area of contact with the brazing material 160, and other factors. When the buffer member 150 is configured to contain Fe, the buffer member 150 can be formed from, for example, W with Fe addition, Mo with Fe addition, or a Ni-containing alloy such as Kovar, Invar, Super Invar, or Niresist. This is because the Ni content facilitates the leaching of Fe into the brazing material.
ロウ付け時にロウ材160にFeが溶出されるように構成する場合であって、緩衝部材150が第1の緩衝部材151と第2の緩衝部材152を含んで構成される場合、第2の緩衝部材は、Feを主成分とすることが好ましい。このように、Feを主成分とする第2の緩衝部材を使用することにより、ロウ材にFeが含まれない場合であっても、ロウ付け後のロウ材160に十分な量のFeが含まれることとなる。また、ロウ付け時にロウ材160にFeが溶出されるように構成する場合は、ロウ付け後のロウ材160に含まれるFeの濃度が部分によって異なることとなるが、端子140側に配置される第2の緩衝部材152がFeを主成分とした材料で構成されることにより、ロウ材160の表面近くの部分により多くのFeが含まれることとなるため、より適切に酸化膜等の原料とすることができる。第2の緩衝部材152をFeを主成分とする構成にする場合、第2の緩衝部材152は、例えば、コバール、インバー、スーパーインバー、ニレジストなどのNiを含有した合金で形成することができる。 When the buffer member 150 is configured to leach Fe into the brazing material 160 during brazing, and the buffer member 150 includes a first buffer member 151 and a second buffer member 152, it is preferable that the second buffer member be primarily Fe. By using a second buffer member primarily Fe, the brazing material 160 after brazing contains a sufficient amount of Fe, even if the brazing material does not contain Fe. Furthermore, when the brazing material 160 is configured to leach Fe into the brazing material during brazing, the concentration of Fe contained in the brazing material 160 after brazing will vary depending on the part. However, by using a material in which the second buffer member 152 located on the terminal 140 side is primarily Fe, the brazing material 160 will contain more Fe near its surface, making it more suitable as a raw material for oxide films, etc. If the second buffer member 152 is composed primarily of Fe, the second buffer member 152 can be formed from an alloy containing Ni, such as Kovar, Invar, Super Invar, or Niresist.
ロウ付け時にロウ材160にFeが溶出されるように構成する場合、Feを供給する他の部材は、ロウ付け時にほとんど全てがロウ材160に溶解するFeを含むまたはFeを主成分とする箔等の部材(Fe供給部材)であってもよい。これにより、緩衝部材150とは無関係に、ロウ材160の意図する領域のFe濃度を高くすることができ、より適切に酸化膜等の原料とすることができる。Fe供給部材を使用する場合、その配置される位置は、どこであってもよい。例えば、第1の緩衝部材151の位置に配置されてもよいし、第2の緩衝部材152の位置に配置されてもよい。換言すると、Fe供給部材は、接続部材130と緩衝部材150の間に配置されてもよいし、緩衝部材150と端子140の間に配置されてもよい。これら以外の位置であってもよいが、Fe供給部材はある程度の大きさがあるため、これらの位置に配置することで製造が容易になる。 When the brazing material 160 is configured to leach Fe during brazing, the other component that supplies Fe may be a foil or other component (Fe supply component) that contains Fe or is primarily composed of Fe, and almost all of the Fe dissolves in the brazing material 160 during brazing. This allows the Fe concentration in the intended region of the brazing material 160 to be increased regardless of the buffer member 150, making it more suitable as a raw material for oxide films, etc. When an Fe supply component is used, it may be located anywhere. For example, it may be located at the position of the first buffer member 151 or the second buffer member 152. In other words, the Fe supply component may be located between the connecting member 130 and the buffer member 150, or between the buffer member 150 and the terminal 140. While other locations are possible, since the Fe supply component has a certain size, placing it in these locations facilitates manufacturing.
ロウ材160は、表面にFeの酸化膜を有することが好ましい。これにより、接続部材130や緩衝部材150の酸化がより抑制される。 It is preferable that the brazing material 160 have an iron oxide film on its surface. This further suppresses oxidation of the connecting member 130 and the buffer member 150.
ロウ材160は、表面に垂直な断面のEPMA分析またはEDX分析によるO(酸素)とFe(鉄)の特性X線の強度比において、ロウ材160の表層での値(特性X線スペクトルの比(Oの強度/Feの強度))がロウ材160の内部での値の2倍以上であることが好ましい。これにより、接続部材130や緩衝部材150の酸化がより抑制される。ロウ材160の表層とは、ロウ材160の表面から20μm以下の領域をいい、ロウ材160の内部とは、ロウ材160の表面から100μm以上離間した領域をいう。 When measuring the intensity ratio of characteristic X-rays of O (oxygen) and Fe (iron) in EPMA or EDX analysis of a cross section perpendicular to the surface of the brazing material 160, it is preferable that the value at the surface of the brazing material 160 (ratio of characteristic X-ray spectra (O intensity/Fe intensity)) is at least twice the value at the interior of the brazing material 160. This further suppresses oxidation of the connecting member 130 and buffer member 150. The surface of the brazing material 160 refers to the region 20 μm or less from the surface of the brazing material 160, and the interior of the brazing material 160 refers to the region 100 μm or more away from the surface of the brazing material 160.
本発明の電極埋設部材100は、接続部材130や緩衝部材150の劣化が起きにくく、端子構造の強度が低下しにくい。その結果、端子140の脱落や電気的な接触不良が生じにくくなる。 The electrode-embedding member 100 of the present invention is less susceptible to deterioration of the connecting member 130 and buffer member 150, and the strength of the terminal structure is less likely to decrease. As a result, the terminal 140 is less likely to fall off or cause poor electrical contact.
[電極埋設部材の製造方法]
次に、本実施形態に係る電極埋設部材の製造方法を説明する。図4および図5は、本発明の実施形態に係る電極埋設部材の製造方法の一例を示すフローチャートである。本発明の実施形態に係る電極埋設部材の製造方法は、図4に示すように、準備工程ステップS1、配置工程ステップS2、およびロウ付け工程ステップS3を備えている。
[Method of manufacturing electrode-embedded member]
Next, a method for manufacturing an electrode-embedded member according to this embodiment will be described. Figures 4 and 5 are flowcharts showing an example of a method for manufacturing an electrode-embedded member according to this embodiment. As shown in Figure 4, the method for manufacturing an electrode-embedded member according to this embodiment includes a preparation step S1, an arrangement step S2, and a brazing step S3.
また、準備工程ステップS1は詳述すると、図5に示すように、成形体形成工程ステップT1、脱脂工程ステップT2、電極等準備工程ステップT3、積層体形成工程ステップT4、焼成工程ステップT5、および端子穴等加工工程ステップT6を備えている。なお、以下では成形体を積層して製造する成形体ホットプレス法による製造方法を説明するが、本発明はロウ付け工程ステップS3後のロウ材に含まれるFe濃度が重要であるため、これを調整できる方法であれば、各工程は別の方法に置き換えてもよい。 More specifically, as shown in Figure 5, preparation step S1 comprises compact formation step T1, degreasing step T2, electrode preparation step T3, laminate formation step T4, firing step T5, and terminal hole processing step T6. The following describes a manufacturing method using a compact hot press method in which compacts are stacked, but since the Fe concentration in the brazing material after brazing step S3 is important in the present invention, each step may be replaced with a different method as long as it can adjust this concentration.
図6(a)~(d)および図7(a)~(c)は、それぞれ本発明の実施形態に係る電極埋設部材の製造工程の一段階を模式的に示す断面図である。図6および図7は、図1の電極埋設部材を製造する場合について示している。まずは、準備工程ステップS1を詳述した、成形体形成工程ステップT1から端子穴等加工工程ステップT6について説明する。 Figures 6(a)-(d) and 7(a)-(c) are cross-sectional views each showing a schematic diagram of a step in the manufacturing process of an electrode-embedded member according to an embodiment of the present invention. Figures 6 and 7 show the manufacturing of the electrode-embedded member of Figure 1. First, we will explain the steps from the compact formation step T1 to the terminal hole processing step T6, which detail the preparation step S1.
成形体形成工程ステップT1では、セラミックス原料粉から複数のセラミックス成形体11、12を形成する。なお、図6ではセラミックス成形体は2の部材に分かれているが、設計に応じて3以上であってもよい。例えば、セラミックス原料粉にバインダ、可塑剤、分散剤などの添加剤を適宜添加して混合して、スラリーを作製し、スプレードライ法等により顆粒(造粒粉)を造粒後、加圧成形して複数のセラミックス成形体11、12を形成することができる。セラミックス原料粉は、電極埋設部材の用途に応じて様々な材料を使用することができる。例えば、AlN、Al2O3、Si3N4、SiCなどを使用することができる。セラミックス原料粉には、必要に応じて焼結助剤となる粉末が添加されてもよい。 In the compact formation step T1, multiple ceramic compacts 11 and 12 are formed from ceramic raw material powder. While the ceramic compact is divided into two components in FIG. 6 , it may be divided into three or more components depending on the design. For example, additives such as binders, plasticizers, and dispersants may be appropriately added to and mixed with the ceramic raw material powder to prepare a slurry. Granules (granulated powder) are then formed by spray drying or other methods, and the resulting mixture is then pressure-molded to form the multiple ceramic compacts 11 and 12. Various materials can be used as the ceramic raw material powder depending on the application of the electrode-embedded member. For example, AlN, Al 2 O 3 , Si 3 N 4 , SiC, etc. can be used. A sintering aid powder may be added to the ceramic raw material powder as needed.
セラミックス原料粉は、高純度であることが好ましく、その純度は、好ましくは96%以上、より好ましくは98%以上である。また、セラミックス原料粉末の平均粒径は、好ましくは0.1μm以上1.0μm以下である。 The ceramic raw material powder is preferably highly pure, preferably 96% or higher, and more preferably 98% or higher. The average particle size of the ceramic raw material powder is preferably 0.1 μm or higher and 1.0 μm or lower.
混合方法は、湿式、乾式の何れであってもよく、例えばボールミル、振動ミルなどの混合器を用いることができる。また、成形方法としては、例えば、一軸加圧成形や冷間静水等方圧加圧(CIP:Cold Isostatic Pressing)法などの公知の方法を用いればよい。なお、セラミックス成形体を形成する方法は、加圧成形に限らず、例えば、グリーンシート積層、または鋳込み成形であっても適用が可能であり、これらを適宜脱脂、またはさらに仮焼する工程により、セラミックス成形体を製造することができる。また、粉末ホットプレス法により積層体を形成してもよい。 The mixing method may be either wet or dry, and a mixer such as a ball mill or vibration mill may be used. Furthermore, known forming methods such as uniaxial pressing or cold isostatic pressing (CIP) may be used. The method of forming the ceramic compact is not limited to pressure forming; for example, green sheet lamination or slip casting can also be used. The ceramic compact can be manufactured by degreasing these as appropriate or by further calcining. A laminate may also be formed using a powder hot press method.
複数のセラミックス成形体11、12は、成形後、機械加工により成形体の形状が整えられてもよい。また、図6(b)に示されるように、セラミックス成形体12の片面(他のセラミックス成形体11との接合面)に、電極120および接続部材130の形状に合わせた形状の凹部が形成されてもよい。凹部はセラミックス成形体11に設けられてもよいし、両方に設けられてもよい。機械加工は、脱脂後に行なってもよい。 After forming, the multiple ceramic compacts 11, 12 may be machined to adjust the shape of the compacts. Furthermore, as shown in FIG. 6(b), one side of the ceramic compact 12 (the surface to be bonded to another ceramic compact 11) may have a recess formed in a shape that matches the shape of the electrode 120 and connecting member 130. The recess may be formed in the ceramic compact 11, or in both. Machining may be performed after degreasing.
脱脂工程ステップT2では、複数のセラミックス成形体11、12を所定の温度以上、所定の時間以上脱脂処理して複数のセラミックス脱脂体21、22を作製する。セラミックス成形体11、12は、例えば、400℃以上800℃以下の温度で熱処理され、セラミックス脱脂体21、22となる。脱脂時間は、1時間以上120時間以下であることが好ましい。脱脂には、大気炉または窒素雰囲気炉を用いることができるが、バインダの不要な成分を除去するためには大気炉の方が好ましい。 In the debinding step T2, multiple ceramic molded bodies 11, 12 are debound at a predetermined temperature or higher for a predetermined time or longer to produce multiple ceramic debound bodies 21, 22. The ceramic molded bodies 11, 12 are heat-treated, for example, at a temperature of 400°C or higher and 800°C or lower to form ceramic debound bodies 21, 22. The debinding time is preferably 1 hour or higher and 120 hours or lower. An atmospheric or nitrogen atmosphere furnace can be used for debinding, but an atmospheric furnace is preferred to remove unnecessary components from the binder.
電極等準備工程ステップT3では、MoやWなどで形成され、所定の形状に裁断された電極120、およびMoやWなどで形成された所定の形状に加工された接続部材130を準備する。 In the electrode preparation process step T3, electrodes 120 made of Mo, W, or the like and cut to a predetermined shape, and connecting members 130 made of Mo, W, or the like and processed to a predetermined shape are prepared.
積層体形成工程ステップT4では、準備した電極120、接続部材130、および複数のセラミックス脱脂体21、22を組み合わせて、平板状に形成され、電極120および接続部材130が埋設された図6(c)に示される積層体30を形成する。 In the laminate formation process step T4, the prepared electrodes 120, connecting members 130, and multiple ceramic degreased bodies 21, 22 are combined to form a flat laminate 30 shown in Figure 6(c) in which the electrodes 120 and connecting members 130 are embedded.
焼成工程ステップT5では、形成された積層体30を、主面(載置面)に垂直方向に一軸加圧焼成して図6(d)に示される焼成体40を得る。加圧する力は、1MPa以上であることが好ましい。また、焼成温度や焼成時間は、基体の材料であるセラミックスの種類によって異なるが、例えば、基体をAlNで形成する場合、1500℃以上2000℃以下であることが好ましい。焼成時間は、例えば、1時間以上12時間以下であることが好ましい。焼成雰囲気は、例えば、窒素や不活性ガス雰囲気であるが、真空などの雰囲気であってもよい。これにより、熱処理後の複数のセラミックス脱脂体21が焼結してセラミックス焼結体となり、これらが一体化され、電極120および接続部材130が埋設された焼成体40が得られる。 In the firing process step T5, the formed laminate 30 is uniaxially pressurized and fired in a direction perpendicular to the main surface (mounting surface) to obtain the fired body 40 shown in FIG. 6(d). The pressure applied is preferably 1 MPa or greater. The firing temperature and firing time vary depending on the type of ceramic used as the base material. For example, when the base is made of AlN, a temperature of 1500°C to 2000°C is preferred. The firing time is preferably 1 hour to 12 hours. The firing atmosphere is, for example, a nitrogen or inert gas atmosphere, but a vacuum atmosphere is also acceptable. As a result, the multiple ceramic degreased bodies 21 after heat treatment are sintered into a ceramic sintered body, which is then integrated to obtain the fired body 40 in which the electrodes 120 and connecting members 130 are embedded.
端子穴等加工工程ステップT6は、焼成体40に研削、研磨等の加工をして外形を所定の形状にし、載置面112の表面粗さを所定の範囲にすることで、図7(b)に示される電極埋設部材前駆体50を作製する。また、焼成体40の裏面側より端子位置に接続部材130に到達するまで所定の形状の端子穴142を穿設する。 In the terminal hole processing step T6, the sintered body 40 is ground, polished, etc. to give it a predetermined outer shape, and the surface roughness of the mounting surface 112 is adjusted to a predetermined range, thereby producing the electrode embedding member precursor 50 shown in Figure 7(b). In addition, terminal holes 142 of a predetermined shape are drilled from the back side of the sintered body 40 to the terminal positions, reaching the connecting member 130.
なお、脱脂工程ステップT2と、積層体形成工程ステップT4との間に、仮焼工程を設けてもよい。仮焼工程を設ける場合、セラミックス脱脂体を仮焼してセラミックス仮焼体を作製する。これにより、電極埋設部材の外形や電極および接続部材の埋設位置などの寸法精度をより高くすることができる。仮焼時間や仮焼温度は、基体の材料であるセラミックスの種類によって異なるが、例えば、基体をAlNで形成する場合、1200℃以上1700℃以下の温度で、0.5時間以上12時間以下仮焼することが好ましい。仮焼雰囲気は、窒素や不活性ガス雰囲気であることが好ましいが、真空などの雰囲気であってもよい。仮焼工程を設ける場合、機械加工は仮焼工程の後に行なってもよい。 A calcination step may be performed between the degreasing step T2 and the laminate formation step T4. When performing the calcination step, the degreased ceramic body is calcined to produce a calcined ceramic body. This allows for higher dimensional accuracy of the outer shape of the electrode-embedded member and the embedded positions of the electrodes and connecting members. The calcination time and temperature vary depending on the type of ceramic used for the substrate. For example, when the substrate is made of AlN, calcination is preferably performed at a temperature of 1200°C to 1700°C for 0.5 to 12 hours. The calcination atmosphere is preferably a nitrogen or inert gas atmosphere, but a vacuum atmosphere or other atmosphere may also be used. When performing the calcination step, machining may be performed after the calcination step.
以上の例に示した工程により、準備工程ステップS1の、セラミックス焼結体からなる平板状の基体110と、基体110に埋設された電極120と、電極120に電気的に接続され、基体110に埋設された接続部材130と、を備え、接続部材130の一方の主面の少なくとも一部が露出する端子穴142が穿設された電極埋設部材前駆体50を準備することができる。次に、配置工程ステップS2およびロウ付け工程ステップS3を説明する。 By following the steps shown in the above example, it is possible to prepare an electrode-embedding component precursor 50 comprising a flat substrate 110 made of a sintered ceramic body (preparation step S1), an electrode 120 embedded in the substrate 110, and a connecting member 130 electrically connected to the electrode 120 and embedded in the substrate 110, with a terminal hole 142 drilled through which at least a portion of one main surface of the connecting member 130 is exposed. Next, the placement step S2 and the brazing step S3 will be described.
配置工程ステップS2は、緩衝部材150および端子140を準備し、緩衝部材150および端子140を電極埋設部材前駆体50の端子穴142に配置する。配置される緩衝部材150は、箔のように薄いものであってもよい。また、緩衝部材150に加えて箔を配置してもよい。 In the placement process step S2, the buffer member 150 and the terminal 140 are prepared and placed in the terminal hole 142 of the electrode-embedding member precursor 50. The buffer member 150 to be placed may be thin, such as foil. Furthermore, foil may be placed in addition to the buffer member 150.
準備する緩衝部材150は、接続部材130側に配置される第1の緩衝部材151と、端子140側に配置される第2の緩衝部材152を含んで構成されてもよい。配置される第1の緩衝部材151または第2の緩衝部材152は、箔のように薄いものであってもよい。また、第1の緩衝部材151および第2の緩衝部材152に加えて箔を配置してもよい。 The prepared buffer member 150 may include a first buffer member 151 arranged on the connection member 130 side and a second buffer member 152 arranged on the terminal 140 side. The first buffer member 151 or second buffer member 152 may be thin, such as foil. Also, foil may be arranged in addition to the first buffer member 151 and second buffer member 152.
ロウ付け工程ステップS3は、Auを主成分とするロウ材160を準備し、端子穴142に配置された緩衝部材150および端子140をロウ材160を用いてロウ付けして固定することで、図7(c)に示される電極埋設部材100が作製される。 In the brazing process step S3, a brazing material 160 containing Au as its main component is prepared, and the buffer member 150 and terminal 140 placed in the terminal hole 142 are brazed and fixed using the brazing material 160, thereby producing the electrode-embedded member 100 shown in Figure 7(c).
本発明の製造方法では、ロウ付け工程ステップS3後のロウ材160が表層にFeを4atoms%以上含むように、配置工程ステップS2で準備する緩衝部材150の成分および大きさもしくはロウ材に接触する面積が調整され、またはロウ付け工程ステップS3で準備するロウ材160の成分が調整される。このとき、ロウ付け時にほとんど全てがロウ材160に溶解するFeを含むまたはFeを主成分とする箔等のFe供給部材を配置してロウ付けを行なってもよい。緩衝部材150に含まれるFeの濃度、緩衝部材150の大きさ、ロウ材に接触する面積等を調整する場合、例えば、ロウ材に接触する面積は大きい方が好ましく、厚みは薄い方が好ましい。しかし、ロウ付け後のロウ材160に含まれるFeの全量を緩衝部材150から溶出されたFeとなるように構成する場合、緩衝部材150の厚みが薄過ぎると、多くがロウ材に溶解してしまいロウ付け後に緩衝部材としての役割を果たせなくなる場合がある。そのため、このように構成する場合、厚みは0.2mm以上2mm以下とすることが好ましい。また、主面の端部の角はC面にすることが好ましく、C0.5mm以上にすることが好ましい。また、緩衝部材150は、ロウ材160のぬれ性が高いことが好ましく、Ra1μm以上に粗面化することがより好ましい。Fe供給部材を使用する場合、厚みが薄過ぎると、溶出するFeの量が不足する場合がある。そのため、Fe供給部材の厚みは0.05mm以上2mm未満とすることが好ましい。 In the manufacturing method of the present invention, the composition and size of the buffer member 150 prepared in the placement step S2 or the area in contact with the brazing material are adjusted, or the composition of the brazing material 160 prepared in the brazing step S3 is adjusted, so that the brazing material 160 after the brazing step S3 contains 4 atoms% or more of Fe in the surface layer. At this time, brazing may be performed by placing an Fe supplying member such as foil containing Fe or consisting primarily of Fe, which dissolves almost entirely in the brazing material 160 during brazing. When adjusting the Fe concentration contained in the buffer member 150, the size of the buffer member 150, the area in contact with the brazing material, etc., for example, a larger area in contact with the brazing material is preferable, and a thinner thickness is preferable. However, if the entire amount of Fe contained in the brazing material 160 after brazing is configured to be Fe eluted from the buffer member 150, if the buffer member 150 is too thin, much of it may dissolve in the brazing material, preventing the buffer member from functioning as a buffer member after brazing. Therefore, when configured in this manner, the thickness is preferably 0.2 mm or more and 2 mm or less. Furthermore, it is preferable that the corners of the ends of the main surface be chamfered, and that the chamfered corners be C0.5 mm or more. Furthermore, it is preferable that the buffer member 150 has high wettability with the brazing material 160, and it is more preferable that the surface be roughened to Ra 1 μm or more. When using an Fe supply member, if the thickness is too thin, the amount of eluted Fe may be insufficient. Therefore, it is preferable that the thickness of the Fe supply member be 0.05 mm or more and less than 2 mm.
このようにすることで、実際のプロセスで使用中に接続部材130や緩衝部材150の劣化が起きにくく、端子構造の強度が低下しにくい、端子140の脱落や電気的な接触不良が生じにくくなる電極埋設部材100を製造することができる。 By doing this, it is possible to manufacture an electrode-embedding member 100 that is less likely to deteriorate during use in the actual process, that is less likely to reduce the strength of the terminal structure, and that is less likely to cause the terminal 140 to fall off or to have poor electrical contact.
[実施例および比較例]
(実施例1)
5wt%Y2O3を添加したAlNを主成分とするセラミックス原料粉を用いて、CIP成形(圧力1ton/cm2)し、成形体のインゴットを得た。これを機械加工することで、直径340mm、厚み20mmのセラミックス成形体、および直径340mm、厚み10mmのセラミックス成形体を成形した。そして、厚み20mmのセラミックス成形体の一方の面に、成形体の中心を共有し、電極を収納するための直径300mm、深さ0.1mmの凹部を設けた。さらに、端子を形成する所定の位置に、接続部材を収納するための直径8.5mm、深さ0.25mmの凹部を設けた。
[Examples and Comparative Examples]
Example 1
A ceramic raw material powder primarily composed of AlN with 5 wt% Y2O3 was subjected to CIP molding (pressure 1 ton/ cm2 ) to obtain a green body ingot. This was then machined to form a ceramic green body with a diameter of 340 mm and a thickness of 20 mm, and another ceramic green body with a diameter of 340 mm and a thickness of 10 mm. A recess with a diameter of 300 mm and a depth of 0.1 mm was provided on one side of the 20 mm green body, sharing the center of the green body, for accommodating an electrode. Furthermore, a recess with a diameter of 8.5 mm and a depth of 0.25 mm was provided at a predetermined position where a terminal would be formed to accommodate a connecting member.
次に、セラミックス成形体を、550℃、12時間脱脂して、セラミックス脱脂体を作製した。次に、直径294mmのモリブデン製のモリブデンメッシュ(線径0.1mm、平織り、メッシュサイズ♯50)を所定の形状に裁断し、電極を準備した。また、W製のペレットからφ8mm×0.2mmtのサイズの接続部材を2つ作製した。次に、凹部を設けたセラミックス脱脂体の凹部に接続部材および電極を載置し、もう一方のセラミックス脱脂体で挟み、電極埋設部材前駆体を作製した。 Next, the ceramic compact was degreased at 550°C for 12 hours to produce a ceramic degreased body. Next, a 294mm diameter molybdenum mesh (wire diameter 0.1mm, plain weave, mesh size #50) was cut to the specified shape to prepare electrodes. Additionally, two connecting members measuring φ8mm x 0.2mm were produced from W pellets. Next, the connecting members and electrodes were placed in the recesses of a ceramic degreased body with a recess, and sandwiched between the other ceramic degreased body to produce an electrode-embedded member precursor.
次に、電極埋設部材前駆体をホットプレス炉に載置して、800℃から1500℃まで14時間の熱処理を行なった。次に、電極埋設部材前駆体の主面(載置面)に垂直な方向に10MPaの力を加えつつ、1800℃、2時間、1軸ホットプレス焼成した。このようにして、電極および接続部材が埋設された基体を焼成した。 Next, the electrode-embedding member precursor was placed in a hot press furnace and heat-treated from 800°C to 1500°C for 14 hours. Next, a force of 10 MPa was applied in a direction perpendicular to the main surface (mounting surface) of the electrode-embedding member precursor, and it was uniaxially hot-press fired at 1800°C for 2 hours. In this way, the substrate with the electrodes and connecting members embedded was fired.
その後、全面に研削、研磨加工を行ない、総厚20mm、絶縁層厚み1.0mm、表面粗さをRa0.4μmのウェハ載置面を形成した。セラミックス基体裏面側より端子位置に接続部材に到達するまで穴径φ5.5mmの平底穴加工を行なった。 The entire surface was then ground and polished to form a wafer-mounting surface with a total thickness of 20 mm, an insulating layer thickness of 1.0 mm, and a surface roughness of Ra 0.4 μm. Flat-bottom holes with a diameter of φ5.5 mm were drilled from the back side of the ceramic base to the terminal positions, reaching the connecting members.
次に、BAu-4ロウ材にFeを添加し、Feを1wt%含有するAu-Ni系ロウ材を準備した。露出した接続部材底面に準備したAu-Ni系ロウ材を介して直径5mm、厚み2mmのW製の緩衝部材と直径5mm長さ50mmの円柱状Ni製給電端子を設置し、真空炉により1050℃でAu-Ni系ロウ材によるロウ付けを行ない、電極埋設部材を完成させた。このようにして、実施例1の電極埋設部材を作製した。 Next, Fe was added to the BAu-4 brazing filler metal to prepare an Au-Ni brazing filler metal containing 1 wt% Fe. A 5 mm diameter, 2 mm thick W buffer member and a 5 mm diameter, 50 mm long cylindrical Ni power supply terminal were attached to the exposed bottom surface of the connecting member via the prepared Au-Ni brazing filler metal. Brazing was then performed in a vacuum furnace at 1050°C using the Au-Ni brazing filler metal to complete the embedded electrode member. In this way, the embedded electrode member of Example 1 was produced.
(実施例2)
実施例2は、実施例1で使用したW製の緩衝部材に代わり、直径5mm、厚み2mmのW製の第1の緩衝部材および直径5mm、厚み2mmのコバール製の第2の緩衝部材を用いた。第2の緩衝部材は、ロウ材に接触する面積を大きくするため端子側の主面の端部の角をC0.5mmに加工し、また、ロウ材と緩衝部材のぬれ性の向上のため表面をRa4μmに粗面化加工を行なった。また、Feを1wt%含有するAu-Ni系ロウ材に代わり、Feを添加していないBAu-4ロウ材を用いた。それ以外は実施例1と同様の条件で実施例2の電極埋設部材を作製した。
Example 2
In Example 2, instead of the W buffer member used in Example 1, a first W buffer member with a diameter of 5 mm and a thickness of 2 mm and a second Kovar buffer member with a diameter of 5 mm and a thickness of 2 mm were used. The corners of the end of the main surface on the terminal side of the second buffer member were processed to C0.5 mm to increase the area in contact with the brazing material, and the surface was roughened to Ra 4 μm to improve the wettability of the buffer member with the brazing material. Furthermore, instead of the Au—Ni-based brazing material containing 1 wt % Fe, a BAu-4 brazing material with no added Fe was used. Otherwise, the electrode-embedded member of Example 2 was produced under the same conditions as Example 1.
(実施例3)
実施例3は、実施例1で使用したW製の緩衝部材に代わり、直径5mm、厚み2mmのFeを1wt%含有するW製の緩衝部材を用いた。緩衝部材は、実施例2の第2の緩衝部材と同様の加工を行なった。また、Feを1wt%含有するAu-Ni系ロウ材に代わり、Feを添加していないBAu-4ロウ材を用いた。それ以外は実施例1と同様の条件で実施例3の電極埋設部材を作製した。
Example 3
In Example 3, instead of the W buffer member used in Example 1, a W buffer member with a diameter of 5 mm and a thickness of 2 mm containing 1 wt % Fe was used. The buffer member was processed in the same manner as the second buffer member of Example 2. In addition, instead of the Au-Ni based brazing material containing 1 wt % Fe, a BAu-4 brazing material with no added Fe was used. Except for this, the electrode-embedded member of Example 3 was produced under the same conditions as Example 1.
(実施例4)
実施例4は、実施例1で使用したW製の緩衝部材に代わり、直径5mm、厚み2mmのFeを1wt%含有するW製の第1の緩衝部材および直径5mm、厚み2mmのコバール製の第2の緩衝部材を用いた。第2の緩衝部材は、実施例2と同様の加工を行なった。また、Feを1wt%含有するAu-Ni系ロウ材に代わり、Feを添加していないBAu-4ロウ材を用いた。それ以外は実施例1と同様の条件で実施例4の電極埋設部材を作製した。
Example 4
In Example 4, instead of the W buffer member used in Example 1, a first buffer member made of W with a diameter of 5 mm and a thickness of 2 mm and containing 1 wt % Fe, and a second buffer member made of Kovar with a diameter of 5 mm and a thickness of 2 mm, were used. The second buffer member was processed in the same manner as in Example 2. In addition, instead of the Au-Ni-based brazing material containing 1 wt % Fe, a BAu-4 brazing material with no added Fe was used. The electrode-embedded member of Example 4 was fabricated under the same conditions as in Example 1 except for the above.
(実施例5)
実施例5は、実施例1で使用したW製の緩衝部材に代わり、直径5mm、厚み2mmのMo製の第1の緩衝部材および直径5mm、厚み2mmのコバール製の第2の緩衝部材を用いた。第2の緩衝部材は、実施例2と同様の加工を行なった。また、Feを1wt%含有するAu-Ni系ロウ材に代わり、Feを添加していないBAu-4ロウ材を用いた。それ以外は実施例1と同様の条件で実施例5の電極埋設部材を作製した。
Example 5
In Example 5, instead of the W buffer member used in Example 1, a first buffer member made of Mo with a diameter of 5 mm and a thickness of 2 mm and a second buffer member made of Kovar with a diameter of 5 mm and a thickness of 2 mm were used. The second buffer member was processed in the same manner as in Example 2. In addition, instead of the Au-Ni based brazing material containing 1 wt% Fe, a BAu-4 brazing material with no added Fe was used. The electrode-embedded member of Example 5 was fabricated under the same conditions as in Example 1 except for the above.
(実施例6)
実施例6は、実施例1で使用したW製の接続部材に代わり、Mo製の接続部材を埋設して焼成した。また、実施例1で使用したW製の緩衝部材に代わり、直径5mm、厚み2mmのMo製の第1の緩衝部材および直径5mm、厚み2mmのコバール製の第2の緩衝部材を用いた。第2の緩衝部材は、実施例2と同様の加工を行なった。また、Feを1wt%含有するAu-Ni系ロウ材に代わり、Feを添加していないBAu-4ロウ材を用いた。それ以外は実施例1と同様の条件で実施例6の電極埋設部材を作製した。
Example 6
In Example 6, instead of the W connecting member used in Example 1, a Mo connecting member was embedded and fired. Furthermore, instead of the W buffer member used in Example 1, a first Mo buffer member with a diameter of 5 mm and a thickness of 2 mm and a second Kovar buffer member with a diameter of 5 mm and a thickness of 2 mm were used. The second buffer member was processed in the same manner as in Example 2. Furthermore, instead of the Au—Ni-based brazing material containing 1 wt % Fe, a BAu-4 brazing material with no added Fe was used. The electrode-embedded member of Example 6 was fabricated under the same conditions as in Example 1, except for the above.
(実施例7)
実施例7は、実施例1で使用したW製の緩衝部材に代わり、第1の緩衝部材として直径5mm、厚み0.1mmのコバール製の箔を配置し、第2の緩衝部材として直径5mm、厚み2mmのW製の緩衝部材を配置してロウ付けを行なった。また、Feを1wt%含有するAu-Ni系ロウ材に代わり、Feを添加していないBAu-4ロウ材を用いた。それ以外は実施例1と同様の条件で実施例7の電極埋設部材を作製した。
Example 7
In Example 7, instead of the W buffer member used in Example 1, a Kovar foil with a diameter of 5 mm and a thickness of 0.1 mm was placed as the first buffer member, and a W buffer member with a diameter of 5 mm and a thickness of 2 mm was placed as the second buffer member, and brazing was performed. Also, instead of the Au-Ni-based brazing material containing 1 wt % Fe, a BAu-4 brazing material with no added Fe was used. Otherwise, the electrode-embedded member of Example 7 was produced under the same conditions as Example 1.
(実施例8)
実施例8は、実施例1で使用したW製の緩衝部材に代えてニレジスト製の緩衝部材を配置してロウ付けを行なった。緩衝部材は、実施例2の第2の緩衝部材と同様の加工を行なった。また、Feを1wt%含有するAu-Ni系ロウ材に代わり、Feを添加していないBAu-4ロウ材を用いた。それ以外は実施例1と同様の条件で実施例8の電極埋設部材を作製した。
(Example 8)
In Example 8, a buffer member made of Ni-resist was placed in place of the W buffer member used in Example 1, and brazing was performed. The buffer member was processed in the same manner as the second buffer member in Example 2. In addition, a BAu-4 brazing material with no added Fe was used instead of the Au-Ni brazing material containing 1 wt % Fe. The electrode-embedded member of Example 8 was produced under the same conditions as Example 1 except for the above.
(比較例1)
比較例1は、実施例1で使用したFeを1wt%含有するAu-Ni系ロウ材に代わり、Feを添加していないBAu-4ロウ材を用いた。それ以外は実施例1と同様の条件で比較例1の電極埋設部材を作製した。
(Comparative Example 1)
In Comparative Example 1, a BAu-4 brazing filler metal with no added Fe was used instead of the Au—Ni brazing filler metal containing 1 wt % Fe used in Example 1. Except for this, the electrode-embedded member of Comparative Example 1 was produced under the same conditions as in Example 1.
(比較例2)
比較例2は、実施例1で使用したW製の緩衝部材と端子の間に直径5mm、厚み0.03mmのコバール製の箔を配置してロウ付けを行なった。また、Feを1wt%含有するAu-Ni系ロウ材に代わり、Feを添加していないBAu-4ロウ材を用いた。それ以外は実施例1と同様の条件で比較例2の電極埋設部材を作製した。
(Comparative Example 2)
In Comparative Example 2, a Kovar foil with a diameter of 5 mm and a thickness of 0.03 mm was placed between the W buffer member and the terminal used in Example 1, and brazing was performed. Also, instead of the Au-Ni brazing material containing 1 wt % Fe, a BAu-4 brazing material with no added Fe was used. Otherwise, the electrode-embedded member of Comparative Example 2 was produced under the same conditions as in Example 1.
[性能評価]
(温度サイクル試験)
端子と外部電源を接続し、電力を負荷し、電極埋設部材の載置面の表面温度を650℃まで加熱し、2時間保持後、200℃に冷却するサイクルを20回繰り返した。温度サイクル試験は、大気にさらされる環境で行なった。
[Performance evaluation]
(Temperature cycle test)
The terminals were connected to an external power source, and power was applied, heating the surface temperature of the mounting surface of the electrode-embedded member to 650° C., maintaining this temperature for 2 hours, and then cooling to 200° C. This cycle was repeated 20 times. The temperature cycle test was carried out in an environment exposed to the atmosphere.
(引張強度試験)
温度サイクル試験後、強度試験機に電極埋設部材の基体を固定し端子を垂直に引張り、破断する強度を測定した。
(Tensile strength test)
After the temperature cycle test, the base of the electrode-embedded member was fixed to a strength tester, and the terminal was pulled vertically to measure the strength at which it broke.
(ロウ材の組成分析)
電極埋設部材を載置面の中心および接続部材の中心を通る垂直な断面で切断し、接続部材、電極、緩衝部材、およびロウ材の断面を露出させ研磨後、EPMAにてロウ材の組成分析を行なった。具体的には、EPMA装置で断面を1000倍に拡大し、断面の元素マッピングを行った。検出する元素はFe、Oとした。なお、ロウ材の組成分析は、EDX・SEM装置で行なうこともできる。
(Composition analysis of brazing filler material)
The electrode-embedded member was cut along a vertical cross section passing through the center of the mounting surface and the center of the connecting member, and the cross sections of the connecting member, electrode, buffer member, and brazing material were exposed and polished, after which the composition of the brazing material was analyzed using EPMA. Specifically, the cross section was magnified 1000 times using the EPMA device, and elemental mapping of the cross section was performed. The elements detected were Fe and O. Note that the composition analysis of the brazing material can also be performed using an EDX-SEM device.
また、分析箇所から測定される特性X線スペクトルから、(Oの強度/Feの強度)を測定し、Feの酸化度合いを評価した。評価する領域はロウ材表層(表面から20μm以下の領域)とロウ材の内部(表面から100μm以上離間した領域)の所定の範囲(100μm~120μm)の約20μm正方の領域とした。 The degree of Fe oxidation was also evaluated by measuring (O intensity/Fe intensity) from the characteristic X-ray spectrum measured at the analysis point. The area evaluated was an approximately 20 μm square area within a specified range (100 μm to 120 μm) of the brazing material surface (area 20 μm or less from the surface) and the interior of the brazing material (area 100 μm or more from the surface).
(表面のFe酸化物の厚み測定)
温度サイクル試験後、ロウ材断面をSEM観察(1000倍)し、表面の酸化物の厚みを測定した。1視野について5か所測定し平均した値を厚みとした。厚みが1μm以上形成されているものは、Feの酸化物が形成され、1μm未満または測定困難な場合はなしと判定した。
(Measurement of the thickness of the Fe oxide on the surface)
After the temperature cycle test, the cross section of the brazing material was observed under an SEM (1000x magnification) to measure the thickness of the oxide on the surface. Five points per field of view were measured, and the average value was taken as the thickness. When the thickness was 1 μm or more, it was judged that Fe oxide had formed, and when it was less than 1 μm or when it was difficult to measure, it was judged that there was no oxide on the surface.
図8は、実施例および比較例の製造条件および測定結果を示す表である。実施例1~8は、比較例1および2と比較して、熱サイクル試験後の端子強度が高く維持されていることが確認された。 Figure 8 is a table showing the manufacturing conditions and measurement results for the examples and comparative examples. It was confirmed that examples 1 to 8 maintained high terminal strength after the thermal cycle test compared to comparative examples 1 and 2.
実施例1~8は、ロウ材の表層の組成分析において、Feを4atoms%以上含んでいた。これに対し、比較例1は、検出限界以下となり、Feを含んでいなかったと評価できる。また、比較例2は、Feの含有量が3.5atoms%であり、基準に満たなかった。断面の観察において、実施例7および比較例2のコバール製の箔は、いずれもほとんど全て溶けていた。一方、比較例2は、ロウ材の表層に含まれるFeの含有量が基準に満たなかった。これは、比較例2のコバール製の箔の厚みが薄過ぎたためと考えられる。比較例1および2は、ロウ材にFeを含まなかった、またはFeの含有量が少なかったことで、熱サイクル試験の過程で接続部材または緩衝部材が劣化して、端子強度が弱くなったと推測される。なお、実施例1~8は、熱サイクル後のロウ材の表面にFeの酸化膜が確認された。 In the composition analysis of the surface layer of the brazing filler metal in Examples 1 to 8, Fe was found to be 4 atoms% or more. In contrast, Comparative Example 1 was found to be below the detection limit and therefore could be considered to contain no Fe. Furthermore, Comparative Example 2 had an Fe content of 3.5 atoms%, which did not meet the standard. In cross-sectional observation, the Kovar foil in both Example 7 and Comparative Example 2 was almost completely melted. On the other hand, the Fe content in the surface layer of the brazing filler metal in Comparative Example 2 did not meet the standard. This is thought to be because the Kovar foil in Comparative Example 2 was too thin. It is presumed that the connection or buffer material in Comparative Examples 1 and 2 deteriorated during the thermal cycle test due to the lack of Fe or the low Fe content in the brazing filler metal, resulting in weakened terminal strength. Furthermore, in Examples 1 to 8, an Fe oxide film was observed on the surface of the brazing filler metal after the thermal cycle.
また、特性X線スペクトルの比(Oの強度/Feの強度)は、実施例1~8のロウ材の表層の値はいずれもロウ材の内部の値より大きく、その差は内部の値の2倍以上であった。また、比較例2ではその値が1.4倍であった。このことからも、実施例の電極埋設部材は熱サイクル後のロウ材の表面にFeの酸化膜が形成されていることが確認された。 Furthermore, the ratio of characteristic X-ray spectra (O intensity/Fe intensity) in the surface layer of the brazing filler metals in Examples 1 to 8 was greater than the value inside the brazing filler metal, with the difference being more than twice the value inside. Furthermore, in Comparative Example 2, the value was 1.4 times higher. This also confirmed that an Fe oxide film was formed on the surface of the brazing filler metal in the examples after the thermal cycle.
以上の結果によって、本発明の電極埋設部材は、接続部材や緩衝部材の劣化が起きにくく、端子構造の強度が低下しにくいため、端子の脱落や電気的な接触不良が生じにくくなることが確かめられた。また、本発明の製造方法は、このような電極埋設部材を製造できることが確かめられた。 These results confirm that the electrode-embedding member of the present invention is less susceptible to deterioration of the connecting members and buffering members, and less likely to reduce the strength of the terminal structure, making it less likely for the terminal to fall off or for poor electrical contact to occur. It was also confirmed that the manufacturing method of the present invention can be used to manufacture such an electrode-embedding member.
本発明は上記実施形態に限定されず、本発明の思想と範囲に含まれる様々な変形および均等物に及ぶことはいうまでもない。また、各図面に示された構成要素の構造、形状、数、位置、大きさ等は説明の便宜上のものであり、適宜変更しうる。 The present invention is not limited to the above-described embodiments, and naturally includes various modifications and equivalents that fall within the spirit and scope of the present invention. Furthermore, the structure, shape, number, position, size, etc. of the components shown in each drawing are for convenience of explanation and may be changed as appropriate.
11、12 セラミックス成形体
21、22 セラミックス脱脂体
30 積層体
40 焼成体
50 電極埋設部材前駆体
100 電極埋設部材
110 基体
112 載置面
120 電極
130 接続部材
140 端子
142 端子穴
150 緩衝部材
151 第1の緩衝部材
152 第2の緩衝部材
160 ロウ材
11, 12 Ceramic formed bodies 21, 22 Ceramic degreased body 30 Laminate 40 Sintered body 50 Electrode-embedding member precursor 100 Electrode-embedding member 110 Base 112 Mounting surface 120 Electrode 130 Connecting member 140 Terminal 142 Terminal hole 150 Cushioning member 151 First cushioning member 152 Second cushioning member 160 Brazing material
Claims (5)
セラミックス焼結体からなる平板状の基体と、
前記基体に埋設された電極と、
前記電極に電気的に接続され、前記基体に埋設された接続部材と、
前記電極に電気を供給する端子と、
前記接続部材および前記端子の間に配置される緩衝部材と、
前記緩衝部材および前記端子を固定するロウ材と、を備え、
前記ロウ材は、Auを主成分とし、前記ロウ材の表面から20μm以下の領域である表層にFeを4atoms%以上含み、
前記ロウ材の前記表面にFeの酸化物が形成されていることを特徴とする電極埋設部材。 An electrode-embedding member,
a flat substrate made of a ceramic sintered body;
an electrode embedded in the substrate;
a connecting member electrically connected to the electrode and embedded in the substrate;
a terminal for supplying electricity to the electrode;
a buffer member disposed between the connection member and the terminal;
a brazing material for fixing the buffer member and the terminal,
The brazing material contains Au as a main component and contains 4 atoms% or more of Fe in a surface layer that is a region of 20 μm or less from the surface of the brazing material ,
An electrode-embedding member, characterized in that an oxide of Fe is formed on the surface of the brazing material .
前記第2の緩衝部材は、Feを主成分とすることを特徴とする請求項1から請求項3のいずれかに記載の電極埋設部材。4. The electrode-embedding member according to claim 1, wherein the second buffer member is mainly composed of Fe.
セラミックス焼結体からなる平板状の基体と、前記基体に埋設された電極と、前記電極に電気的に接続され、前記基体に埋設された接続部材と、を備え、前記接続部材の一方の主面の少なくとも一部が露出する端子穴が穿設された電極埋設部材前駆体を準備する準備工程と、a preparation step of preparing an electrode-embedding member precursor, the electrode-embedding member precursor comprising a flat-plate-shaped substrate made of a ceramic sintered body, an electrode embedded in the substrate, and a connection member electrically connected to the electrode and embedded in the substrate, the electrode-embedding member precursor having a terminal hole formed therein through which at least a portion of one main surface of the connection member is exposed;
緩衝部材および端子を準備し、前記緩衝部材および前記端子を前記電極埋設部材前駆体の前記端子穴に配置する配置工程と、an arrangement step of preparing a buffer member and a terminal, and arranging the buffer member and the terminal in the terminal hole of the electrode-embedding member precursor;
Auを主成分とするロウ材を準備し、前記端子穴に配置された前記緩衝部材および前記端子を前記ロウ材を用いてロウ付けして固定するロウ付け工程と、を含み、a brazing step of preparing a brazing material containing Au as a main component, and brazing and fixing the buffer member and the terminal disposed in the terminal hole using the brazing material,
前記ロウ付け工程後の前記ロウ材が前記ロウ材の表面から20μm以下の領域である表層にFeを4atoms%以上含むように、前記配置工程で準備する前記緩衝部材の成分および大きさもしくは前記ロウ材に接触する面積が調整され、または前記ロウ付け工程で準備する前記ロウ材の成分が調整され、the components and size of the buffer member prepared in the disposing step or the area in contact with the brazing material are adjusted, or the components of the brazing material prepared in the brazing step are adjusted, so that the brazing material after the brazing step contains 4 atoms% or more of Fe in a surface layer that is a region of 20 μm or less from the surface of the brazing material;
前記ロウ付け工程後の前記ロウ材を加熱して、前記ロウ材の前記表面にFeの酸化物を形成することを特徴とする電極埋設部材の製造方法。The method for manufacturing an electrode-embedded member, comprising heating the brazing material after the brazing step to form an oxide of Fe on the surface of the brazing material.
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| JP2004203706A (en) | 2002-12-26 | 2004-07-22 | Ngk Insulators Ltd | Joined product of different kinds of materials and its producing method |
| JP2017183329A (en) | 2016-03-28 | 2017-10-05 | 日本碍子株式会社 | Wafer mounting device |
| JP2017208565A (en) | 2016-05-13 | 2017-11-24 | Toto株式会社 | Electrostatic chuck |
| JP2018203581A (en) | 2017-06-07 | 2018-12-27 | 日本特殊陶業株式会社 | Ceramic structure |
| JP2019201013A (en) | 2018-05-14 | 2019-11-21 | 日本特殊陶業株式会社 | Component for semiconductor manufacturing device |
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| JP2004203706A (en) | 2002-12-26 | 2004-07-22 | Ngk Insulators Ltd | Joined product of different kinds of materials and its producing method |
| JP2017183329A (en) | 2016-03-28 | 2017-10-05 | 日本碍子株式会社 | Wafer mounting device |
| JP2017208565A (en) | 2016-05-13 | 2017-11-24 | Toto株式会社 | Electrostatic chuck |
| JP2018203581A (en) | 2017-06-07 | 2018-12-27 | 日本特殊陶業株式会社 | Ceramic structure |
| JP2019201013A (en) | 2018-05-14 | 2019-11-21 | 日本特殊陶業株式会社 | Component for semiconductor manufacturing device |
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