JP4148479B2 - Scanning exposure apparatus and method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a scanning exposure apparatus including means for generating a dynamic target value of a substrate stage or an original stage control system for realizing higher-accuracy synchronous exposure scanning, and in particular, to correct in-shot distortion. The present invention also relates to a scanning exposure apparatus that can also be used.
[0002]
[Prior art]
In the static exposure apparatus, the center position of the shot is calculated from the alignment measurement result as shown in FIG. 9 and given as the target value of the wafer stage. Target values for the wafer stage include an array rotation θx (Rot.x) around the X axis, an array rotation θy (Rot.y) around the Y axis, an X direction array magnification Magx (Scal.x), and a Y direction array magnification Magy ( Scal.y), X-direction positional shift Shift. x, Y direction position shift Shift. y, coordinates of the shot center calculated from the exposure shot number (Shot Used), and data such as tip rotation (RO) with the shot center as the rotation center are given. Since exposure within the angle of view of the shot is performed collectively in the static exposure apparatus, distortion within the angle of view cannot be corrected, whereas in the scanning exposure apparatus, one shot of exposure can be composed of partial exposure. In addition, intra-shot distortion (skew distortion) such as X1, Y1, and θ1 in FIG. 6 can be corrected.
[0003]
However, in the prior art, means for generating and defining the control target value of the wafer stage for realizing the synchronous scanning exposure as shown in FIG. 6 from the alignment measurement data as shown in FIG. 9, ie, (1) scanning Means for generating and defining target value of wafer stage that changes sequentially during exposure, (2) Target value generation and definition means corresponding to the size of exposure field angle that changes for each shot, and (3) For each shot No means for generating and defining the target value corresponding to the scanning speed and the scanning direction, and (4) means for stepping to the position where the alignment in the exposure area is achieved at the start of exposure.
[0004]
[Problems to be solved by the invention]
  The present inventionBaseBoard stageas well asSmall number of original stagesAgainst one or the otherGoalpositionGenerationScanning exposure technology including useful techniquesThe purpose is to provide.
[0005]
[Means for Solving the Problems]
  In order to achieve the above object, the scanning exposure apparatus of the present invention scans the original and the substrate while scanning the original through the pattern of the original.Shot areaIn the scanning exposure apparatus that exposes, an original stage that is movable while holding the original, a substrate stage that is movable while holding the substrate,Based on the data of the center position of the shot area obtained by global alignment measurement,The original versionpatternofCenter andShot area on the substrateHeart ofTo be consistent withA coefficient of a 0th-order term of a polynomial including at least a 0th-order or 2nd-order term having a variable on a coordinate on a scanning axis with the center of the pattern or the center of the shot area as an origin is set. Based on coefficientTarget position generation means for generating a target position of at least one of the original stage and the substrate stage, and a deviation of the relative position of the original stage and the substrate stage driven according to the target position from the target relative position is removed. First correction value generating means for generating a first correction value for the target position;Based on data relating to distortion of the shot area obtained from at least one of job parameters and the global alignment measurement,The shot areaofdistortionCorresponding toTheSet the coefficients of at least first and second order terms of the polynomial,Based on the coefficients of the at least first and second order termsSecond correction value generation means for generating a second correction value for the target position; and the target positionAndDriving means for moving at least one of the original stage and the substrate stage based on the first and second correction values;,It is characterized by comprising.
[0006]
  Furthermore, the scanning exposure method of the present invention provides the substrate through the pattern of the original while scanning the original held on the movable original stage and the substrate held on the movable substrate stage.Shot areaIn a scanning exposure method for exposing
Based on the data of the center position of the shot area obtained by global alignment measurement,The original editionpatternofCenter andShot area on the substrateHeart ofTo be consistent withA coefficient of a 0th-order term of a polynomial including at least a 0th-order or 2nd-order term having a variable on a coordinate on a scanning axis with the center of the pattern or the center of the shot area as an origin is set. Based on coefficientGenerating a target position of at least one of the original stage and the substrate stage;
  Generating a first correction value for the target position for removing a deviation of the relative position of the original stage and the substrate stage driven according to the target position from the target relative position;
Based on data relating to distortion of the shot area obtained from at least one of job parameters and the global alignment measurement,The shot areaofdistortionCorresponding toTheSet coefficients of at least first and second order terms of the polynomial, and based on the coefficients of the at least first and second order termsGenerating a second correction value for the target position;
  The target positionAndBased on the first and second correction values, at least one of the original stage and the substrate stage is moved.
[0007]
  Furthermore, the device manufacturing method of the present invention includes a step of exposing the substrate through the pattern of the original plate using the scanning exposure apparatus.
[0008]
Preferably, the coefficient of each term in the polynomial is determined by an upper processor and passed to the lower processor in shot units, and the target value is calculated by the lower processor at an interval of a servo clock set to an appropriate value.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
A scanning exposure apparatus according to an embodiment of the present invention has a stage that can be scanned in a first direction for projecting a pattern on an original by scanning, and is performing scanning based on a parameter given for each shot. The target value generating means for generating the target value is provided. The target value generation means calculates a drive target value in the second direction other than the scan axis by a function expression using a coordinate value of the scan axis or a reference time based on the scan start time of the scan axis as a variable.
[0010]
The function is a polynomial with the coordinate value of the scanning axis or the reference time as a variable, and the coefficient of the polynomial can be input and set by the user as a JOB parameter. Alternatively, the distortion in the shot may be estimated from shot arrangement data obtained by global alignment measurement, and the polynomial variable may be calculated. The coefficient of the polynomial is given for each shot with a predetermined point in the shot as the origin. In the present embodiment, the predetermined one point is the shot center. The dimension of the exposure shot is designated for each shot by the relative distance from the predetermined one point. A group of parameters based on the exposure shot definition method is given in shot units.
[0011]
Preferably, before starting the exposure of the scanning exposure shot, there is provided step moving means for step-moving to the scanning start position given by at least the scanning exposure region, the correction parameter, the acceleration time until entering the constant speed scanning, and the settling time. . Then, by designating a group of parameters defining shot coordinates for each exposure shot, step movement to a scanning start position for exposure for one shot and scanning for exposure are continuously performed.
[0012]
In the exposure method according to an embodiment of the present invention, a coordinate system with the origin at the center of an exposure shot or reticle pattern is defined. A target value for all axes of the wafer stage or reticle stage during scanning exposure is expressed by a polynomial expression with coordinates on the scanning axis in the coordinate system as variables. The coefficient of each term in the polynomial is determined by global alignment measurement or JOB parameter input, and is passed from the host processor in shot units. The lower processor sequentially reproduces the target value from the polynomial having these coefficients and the position coordinates on the scanning axis in the shot being scanned.
[0013]
[Action]
According to the above configuration, it is possible to provide means for generating and defining a control target value of the substrate stage or the original stage for realizing synchronous scanning exposure. In addition, with respect to how to provide the target values (X0, Y0, θ0), a dynamic target value generating means for sequentially generating the substrate stage and the original stage during scanning of the exposure slit is added to the target value generating means of the conventional substrate stage. With this configuration, the compatibility of the exposure sequence controller with the conventional exposure apparatus can be maintained. Further, according to the defining means of the present invention, it is possible to correct intra-shot distortion. Further, conversely, the original pattern can be distorted in accordance with the in-shot pattern formed distorted in the preceding process, and overlay exposure can be performed.
[0014]
【Example】
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a view schematically showing an exposure apparatus according to an embodiment of the present invention as viewed from the side, and FIG. 2 is a perspective view showing the appearance of the exposure apparatus. As shown in these drawings, this exposure apparatus projects a part of the pattern of the original on the reticle stage 1 onto the wafer on the wafer stage 3 via the projection optical system 2, and is relative to the projection optical system 2. In addition, the reticle pattern is exposed to the wafer by synchronously scanning the reticle and the wafer in the Y direction, and step movement is performed to repeatedly perform this scanning exposure on a plurality of transfer areas (shots) on the wafer. A step-and-scan type exposure apparatus.
[0015]
Reticle stage 1 is driven in the Y direction by linear motor 4, X stage 3 a of wafer stage 3 is driven in the X direction by linear motor 5, and Y stage 3 b is driven in the Y direction by linear motor 6. . In the synchronous scanning of the reticle and the wafer, the reticle stage 1 and the Y stage 3b are driven in the Y direction at a constant speed ratio (for example, 4: -1, where “−” indicates that the direction is opposite). Do. Further, the step movement in the X direction is performed by the X stage 3a. A Z-tilt stage (not shown) is mounted on the X stage 3a, and a wafer chuck 13 for holding the wafer is mounted thereon.
[0016]
The wafer stage 3 is provided on a stage surface plate 7, and the stage surface plate 7 is supported on a floor or the like at three points via three dampers 8. The reticle stage 1 and the projection optical system 2 are provided on a lens barrel base plate 9, and the lens barrel base plate 9 is supported on a base frame 10 placed on a floor or the like via three dampers 11 and a column 12. Yes. The damper 8 is an active damper that actively dampens or dampens vibrations in the six-axis direction. However, a passive damper may be used, or the damper 8 may be supported without a damper.
[0017]
  The exposure apparatus also includes a laser interferometer that measures the distance between the lens barrel surface plate 9 and the stage surface plate 7 at three points.23, 24A distance measuring means 13 such as a microencoder is provided.In addition, 25 is a laser side long optical path, 26 is a Y direction moving mirror.
[0018]
The light projecting means 21 and the light receiving means 22 constitute a focus sensor for detecting whether or not the wafer on the wafer stage 3 is positioned on the focus surface of the projection optical system 2. That is, the light projecting means 21 fixed to the lens barrel base plate 9 irradiates the wafer with light from an oblique direction, and the position of the reflected light is detected by the light receiving means 22, whereby the optical axis direction of the projection optical system 2 is detected. The position of the wafer surface is detected.
[0019]
In this configuration, when the wafer is loaded onto the wafer stage 3 by the transfer means (not shown) via the transfer path between the two support columns 12 at the front of the apparatus and the predetermined alignment is completed, the exposure apparatus performs scanning exposure and While repeating step movement, the reticle pattern is exposed and transferred to a plurality of transfer areas on the wafer. In scanning exposure, the reticle stage 1 and the Y stage 3b are moved in the Y direction (scanning direction) at a predetermined speed ratio, the pattern on the reticle is scanned with slit-shaped exposure light, and the wafer is scanned with the projected image. By scanning, a pattern on the reticle is exposed to a predetermined transfer region on the wafer. During the scanning exposure, the height of the wafer surface is measured by the focus sensor, and the height and tilt of the wafer stage 3 are controlled in real time based on the measured values, and focus correction is performed. When the scanning exposure for one transfer area is completed, the X stage 3a and / or Y stage 3b is driven to move the wafer stepwise in the X direction and / or the Y direction, thereby scanning the other transfer area at the start position of the scanning exposure. And scanning exposure is performed. Each of the transfer areas on the wafer can be sequentially and efficiently exposed by a combination of the step movement in the X and Y directions and the movement for scanning exposure in the Y direction. The arrangement of the transfer area, the scanning direction of Y in either positive or negative, the order of exposure to each transfer area, and the like are set.
[0020]
In the scanning exposure system as shown in FIG. 1, unlike the stationary exposure system, it is necessary to position the wafer stage during scanning at a predetermined position at a predetermined time. Therefore, in this embodiment, the position of the shot including the deformation component is defined as follows. That is, the center of the exposure shot is defined as the origin, the scanning direction is defined as the Y axis, the direction orthogonal to the exposure surface is defined as the X axis, and the direction orthogonal to the exposure surface (optical axis direction) is defined as the Z axis. A function having a Y coordinate y as a variable is defined from the first order to the nth order, and the function value (hereinafter referred to as CASP parameter) is assigned to each axis (X, Y, Z, θ)._X , Θ_Y , Θ_Z Are added as correction values. The CASP parameter is passed from the upper processor to the lower processor for each exposure shot.
[0021]
For example, the CASP parameter for the X axis is
[0022]
[Expression 1]
It can be expressed as Where C_x0 represents the positional relationship between the shot center and the wafer stage, and Y₀ Represents the positional relationship between the shot center and the reticle center.
[0023]
In the present embodiment, the following quadratic expression, which is an expression up to the quadratic term of the expression (1), was actually adopted.
[0024]
[Expression 2]
  FIG. 3 shows the configuration of the stage control system in the apparatus of FIG. The control system shown in FIG. 1 includes an upper processor 30 that performs sequence processing and a lower processor 40 that performs real-time processing. The host processor 30 includes JOB parameter input means 31, global alignment measurement means 32, shot distortion data processing means 34, Reticle alignment measuring means 33The alignment data processing means 35 and the like are provided as software. The lower processor 40 includes a CASP reproducing unit 41, a profiler 42, an inter-unit correction target value generating unit 43., Adder45, adder 46, NonInterference processing / servo calculation processing means 48, topology correction means 49 and the like are provided as software.
[0025]
Since the host processor 30 performs sequence processing, various processes are activated by an event, and it is not possible to expect a temporal guarantee regarding the execution of each processing item. In the present embodiment, processing items with loose temporal constraints such as processing across units such as alignment measurement and parameter input processing are assigned to the upper processor 30, and processing items with severe temporal constraints are lower processors. 40.
[0026]
The lower processor 40 performs real-time processing. In other words, the process determined by the timer interrupt is activated, and the completion of the processing is surely guaranteed until the next timer interrupt occurs. In this embodiment, the lower-level processor takes charge of stage target value generation and servo calculation processing during scanning exposure.
[0027]
In the host processor 30, the JOB parameter input means 31 is used by the user of the apparatus to input information based on the process and pattern information via the man-machine interface. In this embodiment, JOB parameters relating to in-shot distortion represented by parallelograms and trapezoidal shot shapes (skew distortion) can be input.
[0028]
The global alignment measurement means 32 performs alignment measurement in several typical shots within the wafer to obtain measurement data. In this embodiment, the global alignment measurement is performed in a stationary state, but it may be performed while scanning. From the global alignment data, for example, the wafer elongation can be estimated from the relative relationship between the shot and the center position of the shot, so that the shot distortion data can be calculated.
[0029]
For example, the Y-direction magnification Magy is substituted for the CASPY direction primary parameter, and the X-direction magnification Magx is substituted for the projection magnification of the projection lens, whereby the vertical and horizontal magnification values of the exposure shot can be obtained from the global alignment data.
[0030]
The reticle alignment measuring means 33 measures the deviation amount of the center position with respect to the apparatus reference of the reticle pattern and the distortion amount in the shot pattern.
[0031]
  The shot distortion data processing means 34 integrates the shot distortion data input from the JOB parameter input means 31 and the shot distortion data obtained from the global alignment measurement means 32, and the integration result and further the reticle alignment measurement means 33.FromBased on the obtained reticle distortion data, CASP1-n order parameters are calculated and output.
[0032]
The alignment data processing means 35 performs arithmetic processing for aligning the center of the reticle pattern with the position of the center of the pattern on the wafer. Here, correction calculation is performed so that the pattern centers of both match with the apparatus reference. The calculation processing result is the CASP0th order parameter (C_x0, C_y0, ..., Y₀ ) Is output.
[0033]
The above CASP1 to nth order parameters are a collection of polynomial coefficients calculated by the CASP reproducing means 41 and the like, and include shot center position information (CASP0th order) and in-shot distortion information (CASP1th to nth order). The CASP parameter is passed from the upper processor to the lower processor 40 for each shot.
[0034]
In the lower processor 40, the profiler 42 generates a stage positioning target value for performing stage movement at the time of scanning exposure and step movement with a predetermined profile. Further, the positioning target value is corrected and output based on the 0th-order CASP parameter among the 0th to nth-order CASP parameters delivered from the host processor 30 for each shot (profile output).
[0035]
The CASP 0th order parameter changes in a large range when stepping from shot to shot, for example. When the target value changes greatly, it is necessary to smoothly smooth the target position displacement so that a large step input is not applied to the servo system of the wafer stage. The profiler 42 outputs the target value data for the positioning so that smooth stage movement is performed in the shortest time with respect to the time axis from the given target value, maximum acceleration, maximum speed, and maximum impact force. Further, at the time of scanning exposure, it is possible to generate a constant velocity motion target value for driving at a constant speed after accelerating the wafer stage / reticle stage, and to decelerate and stop.
[0036]
The CASP reproducing means 41 reproduces the target position according to the current position in the shot of the wafer stage from the coefficient of the polynomial expressed in the CASP parameter in cooperation with the profiler 42. That is, the CASP reproducing means 41 uses the 1st to nth order CASP parameters among the 0th to nth order CASP parameters delivered from the host processor 30 for each shot as a coefficient in the above equation (2). The correction values (x (y), y (y), z (y), θx (y), θy (y), θz (y)) are sequentially calculated from the coordinate position y at the position to reproduce the stage position correction value. . Since the sequential correction value output by the CASP reproducing means is used to correct the in-shot distortion, the actual output value is at most about ± 50 nm in the XY direction.
[0037]
In this embodiment, the reticle stage moves only in the Y direction. Although the reticle stage guide guides in the Y direction, a slight amount of displacement occurs in a direction other than the Y axis depending on the absolute position of the reticle stage, so that the amount of displacement of the reticle thereby corrects the position of the wafer stage and corrects the error. It needs to be removed. The inter-unit correction target value generating means 43 generates an inter-unit correction target value for removing such an error.
[0038]
The adder 45 adds the CASP reproduction data input from the CASP reproduction unit 41, the profiler output input from the profiler 42, and the inter-unit correction target value input from the inter-unit correction target value generation unit 43. The three values always change during scanning exposure, and the total value is sequentially output as a target value to an adder 46 which is a target value input means of the servo system.
[0039]
The topology correction means 49 removes other-axis interference caused by mechanical factors from the signal reading value of the sensor that detects the current position of the wafer stage, and outputs the current position on the wafer stage coordinate axis.
[0040]
The adder 46 constitutes a servo system for the wafer stage. Deviation data is calculated by calculating the difference between the current position of the wafer stage from the topology correction means 49 and the sequential target value output from the adder 45.
[0041]
The non-interference processing / servo calculation processing means 48 converts the deviation amount on each coordinate axis obtained from the adder 46 into a drive amount based on the mounting position of the actuator. In addition, servo calculation represented by PID, notch filter calculation that removes a mechanical resonance point, and the like are included.
[0042]
Reference numeral 50 denotes a coordinate converter. The host processor designates the target position by a six-axis coordinate expression in which the target position of the wafer stage is the chuck center of the wafer stage and the surface is the pivot point. By the coordinate converter 50, the rotation center of the wafer stage is converted into a fixed point which is the center of the projection lens and the image plane. The rotation component by the CASP parameter is operated by the rotation amount with the projection lens center and the image plane as the pivot point.
[0043]
FIG. 4 shows the slit position (A) at the start of scanning exposure and the slit position (B) after the end of scanning exposure in the scanning exposure apparatus embodying the present invention. In the figure, 101 (solid line) is a shot shape when shot distortion correction is performed by CASP parameter designation, and 102 (dotted line) is a shot shape when shot distortion correction is not performed. The position at the start of exposure of the slit is deviated from the original position with respect to the shot 102 in a state where the shot distortion correction is not performed according to the shot distortion correction instruction by the CASP parameter.
[0044]
FIG. 5 is a diagram showing a trajectory passing through the wafer surface at the center of the exposure slit when adjacent exposure shots are successively scanned and exposed. In the figure, 201 is a trajectory of scanning exposure of the first shot 206, 202 is a trajectory stepping between the first shot 206 and the second shot (when shot distortion correction is performed), and 203 (dotted line) is the first trajectory. Trajectory stepping between one shot 206 and second shot 207 (when no shot distortion correction is performed), 204 is a trajectory of scanning exposure of second shot 207 (when shot distortion correction is performed), 205 (dotted line) ) Is a locus of scanning exposure of the second shot 207 (when no shot distortion correction is performed).
[0045]
When the second shot 207 has shot distortion, it is necessary to change the position at which scanning exposure is started. That is, the step drive target value must be changed from 203 to 202. The amount of variation can be obtained by the following expression when shot distortion of only the X-axis direction component is taken as an example.
[0046]
[Equation 3]
FIG. 6 is an explanatory diagram of shot distortion that can be corrected in the above-described embodiment and a polynomial for correcting the shot distortion (both in FIG. 6 are linear equations).
[0047]
[Second embodiment]
In the above description, as an example of calculating the driving target value other than the scanning axis in consideration of the secondary component according to the coordinate value of the scanning axis (Y axis), the example using the expression (2) has been shown. As an example, an example will be described in which drive target values other than for the scan axis are calculated according to a reference time based on the scan start time of the scan axis.
[0048]
The stage position is
[0049]
[Expression 4]
The target value reproduction similar to that in the first embodiment is possible. The time (Ts) at which the scanning slit is located at the center of the shot can be obtained in advance from the center coordinates of the shot, the current position before entering the exposure operation, the scanning speed, and the acceleration parameter before starting the exposure. That is, by providing the CASP parameter with the time when the exposure slit passes through the center of the shot as the origin, the same result as the target value reproduction method based on the scanning position of the first embodiment can be obtained.
[0050]
Examples of microdevice manufacturing
FIG. 7 shows a flow of manufacturing a microdevice (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.). In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (mask production), a mask on which the designed circuit pattern is formed is produced. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is referred to as a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), and the like. including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, the semiconductor device is completed and shipped (step 7).
[0051]
FIG. 8 shows a detailed flow of the wafer process. In step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern of the mask is printed on the wafer by exposure using the exposure apparatus described above. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), the resist that has become unnecessary after the etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.
[0052]
By using the manufacturing method of this embodiment, it is possible to manufacture a highly integrated semiconductor device that has been difficult to manufacture at low cost.
[0053]
【The invention's effect】
  As described above, according to the present invention, the substratestageAnd the original versionFor at least one of the stagesA scanning exposure technique including a technique useful for target position generation can be provided.
[Brief description of the drawings]
FIG. 1 is a view schematically showing a state in which an exposure apparatus according to an embodiment of the present invention is viewed from the side.
2 is a perspective view showing an appearance of the exposure apparatus of FIG. 1. FIG.
FIG. 3 is a block diagram showing a configuration of a control system in the apparatus of FIG. 1;
FIG. 4 is an explanatory diagram of intra-shot distortion correction in the apparatus of FIG. 1;
FIG. 5 is an explanatory diagram for in-shot distortion correction of two adjacent shots in the apparatus of FIG. 1;
6 is a graph showing a shape diagram of in-shot distortion that can be corrected by the apparatus shown in FIG. 1 and a formula for correcting the distortion. FIG.
FIG. 7 is a diagram showing a flow of manufacturing a microdevice.
8 is a diagram showing a detailed flow of the wafer process in FIG. 7. FIG.
FIG. 9 is a global alignment measurement result output screen in a conventional exposure apparatus.
[Explanation of symbols]
  1: reticle stage, 2: projection optical system, 3: wafer stage, 4: linear motor, 3a: X stage, 3b: Y stage, 6: linear motor, 7: stage surface plate, 8: damper, 9: lens barrel Surface plate, 10: base frame, 11: damper, 12: support, 13: distance measuring means21: light projecting means, 22: light receiving means, 23, 24: laser interferometer, 25: laser measuring optical path, 26: Y-direction moving mirror, 30: host processorSa31: JOB parameter input means, 32: global alignment measurement means, 34: Shot distortion data processing means, 33: Reticle alignment measuring means, 35: alignment data processing means, 40: lower processor, 41: CASP reproducing means, 42: profiler, 43: inter-unit correction target value generating means45:Adder46:Adder 48: Decoupling processing / servo calculation processing means 49: Topology correction means 50: Coordinate converter.

Claims (7)

In the scanning exposure apparatus that exposes the shot area of the substrate through the pattern of the original while scanning the original and the substrate,
An original stage that is movable while holding the original;
A substrate stage movable while holding the substrate;
Based on the data of the center position of the shot area obtained by the global alignment measurement, as the center of the shot area of the substrate of the original pattern is matched, origin at the center of the center or the shot area of the pattern A coefficient of a 0th-order term of a polynomial including at least a 0th-order or 2nd-order term having coordinates on the scanning axis as a variable is set, and based on the coefficient of the 0th-order term, the original stage and the substrate stage Target position generating means for generating at least one target position;
First correction value generation means for generating a first correction value for the target position for removing a deviation of the relative position of the original stage and the substrate stage driven according to the target position from the target relative position;
Based on the data relating to the distortion of the job parameters and the shot region in which the obtained from at least one global alignment measurement, to set the coefficient of at least first and second order terms of the polynomial corresponding to the distortion of the shot area, the Second correction value generating means for generating a second correction value for the target position based on at least coefficients of the first and second order terms ;
The target position and based on the first and second correction value, and a driving means for moving at least one of said original stage and said substrate stage,
A scanning type exposure apparatus comprising: The second correction value generating means further-out based on the data relating to the distortion of the pattern region obtained by the original alignment measurement, scanning of claim 1, wherein the generating the second correction value Exposure device. The second correction value generating means may further-out based on the data relating to the distortion of the pattern region obtained by the original alignment measurement, comprising calculating means for calculating the coefficients of the at least first and second order terms of the polynomial The scanning exposure apparatus according to claim 1 or 2 , characterized in that:   4. The scanning exposure apparatus according to claim 1, wherein the target position includes a rotation component. An upper processor and a lower processor, wherein the upper processor generates the coefficients of the at least first and second order terms, and the lower processor uses the coefficients of the at least first and second order terms to perform the second correction 2. The scanning exposure apparatus according to claim 1, wherein a value is generated. In the scanning exposure method of exposing the shot area of the substrate through the pattern of the original while scanning the original held on the movable original stage and the substrate held on the movable substrate stage,
Based on the data of the center position of the shot area obtained by the global alignment measurement, as the center of the shot area of the substrate of the original pattern is matched, origin at the center of the center or the shot area of the pattern A coefficient of a 0th-order term of a polynomial including at least a 0th-order or 2nd-order term having coordinates on the scanning axis as a variable is set, and based on the coefficient of the 0th-order term, the original stage and the substrate stage Generate at least one target position,
Generating a first correction value for the target position for removing a deviation of the relative position of the original stage and the substrate stage driven according to the target position from the target relative position;
Based on the data relating to the distortion of the shot area obtained from at least one of the job parameter and the global alignment measurement, the coefficients of the first and second order terms of the polynomial corresponding to the distortion of the shot area are set, Generating a second correction value for the target position based on at least the coefficients of the first and second order terms ;
The target position and based on the first and second correction values, scanning exposure method characterized by moving at least one of said original stage and said substrate stage. Using a scanning type exposure apparatus according to any one of claims 1 to 6, a device manufacturing method characterized by comprising the step of exposing a substrate through a pattern of an original.