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JP4326366B2 - Metal base circuit board - Google Patents
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JP4326366B2 - Metal base circuit board - Google Patents

Metal base circuit board Download PDF

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JP4326366B2
JP4326366B2 JP2004042993A JP2004042993A JP4326366B2 JP 4326366 B2 JP4326366 B2 JP 4326366B2 JP 2004042993 A JP2004042993 A JP 2004042993A JP 2004042993 A JP2004042993 A JP 2004042993A JP 4326366 B2 JP4326366 B2 JP 4326366B2
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Prior art keywords
circuit board
circuit
metal base
metal
base circuit
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JP2004042993A
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JP2005236015A5 (en
JP2005236015A (en
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克憲 八島
秀則 石倉
高志 齊木
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Denka Co Ltd
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Denki Kagaku Kogyo KK
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Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to CA2520241A priority patent/CA2520241C/en
Priority to CA2773076A priority patent/CA2773076A1/en
Priority to EP04727676.1A priority patent/EP1615267B1/en
Priority to SG200802901-9A priority patent/SG162619A1/en
Priority to SG200802903-5A priority patent/SG163439A1/en
Priority to MXPA05011216A priority patent/MXPA05011216A/en
Priority to CA2773085A priority patent/CA2773085A1/en
Priority to CA2773112A priority patent/CA2773112A1/en
Priority to KR1020057019663A priority patent/KR101051908B1/en
Priority to US10/553,076 priority patent/US7709939B2/en
Priority to KR1020107028252A priority patent/KR101097075B1/en
Priority to PCT/JP2004/005365 priority patent/WO2004093186A1/en
Priority to SG200802902-7A priority patent/SG162620A1/en
Priority to KR1020107028250A priority patent/KR101162133B1/en
Priority to KR1020107028251A priority patent/KR101097076B1/en
Publication of JP2005236015A publication Critical patent/JP2005236015A/en
Publication of JP2005236015A5 publication Critical patent/JP2005236015A5/ja
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Publication of JP4326366B2 publication Critical patent/JP4326366B2/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Insulated Metal Substrates For Printed Circuits (AREA)

Description

本発明は、出力用半導体と制御用半導体とを共に実装してなる混成集積回路に用いるに好適な金属ベース回路基板に関する。 The present invention relates to a metal base circuit board suitable for use in a hybrid integrated circuit in which an output semiconductor and a control semiconductor are mounted together.

金属板上に無機フィラ−を充填したエポキシ樹脂等からなる絶縁層を設け、その上に回路を配設した金属ベース回路基板が、熱放散性に優れることから高発熱性電子部品を実装する回路基板として用いられている。 A circuit for mounting highly exothermic electronic components because a metal base circuit board with an insulating layer made of an epoxy resin filled with an inorganic filler on a metal plate and a circuit on it is excellent in heat dissipation. Used as a substrate.

混成集積回路を搭載する回路基板に関しては、半導体素子の高集積化により、出力用半導体素子等が小型化されると共に、同一基板上にさまざまな種類の半導体素子に加えて抵抗体チップ等をも搭載するという手法が主流となってきている。それぞれの半導体素子や電子部品毎に要求される基板特性が異なるために、部分的にそれぞれの半導体素子や電子部品に対応する特性を有する回路基板が要求されている。 Regarding circuit boards on which hybrid integrated circuits are mounted, semiconductor elements for output and the like are miniaturized due to the high integration of semiconductor elements, and in addition to various types of semiconductor elements, resistor chips and the like are also provided on the same substrate. The method of mounting has become mainstream. Since the required substrate characteristics are different for each semiconductor element and electronic component, a circuit board having characteristics partially corresponding to each semiconductor element and electronic component is required.

このため、例えば特許文献1に開示されているような、異種の絶縁層を組み合わせた回路基板が提案されている。しかし、このような複合絶縁基板では、それを製造する工程が繁雑なために、コストアップになる上に、異種絶縁層を小面積内で複雑に組み合わせることが技術的に容易でなく、回路基板の大幅な小型化が達成し得ないという問題があった。
特開平6−90071号公報。
For this reason, for example, a circuit board in which different types of insulating layers are combined has been proposed as disclosed in Patent Document 1. However, in such a composite insulating substrate, the manufacturing process thereof is complicated, and thus the cost is increased, and it is not technically easy to combine different insulating layers in a small area in a complicated manner. There has been a problem that a significant reduction in size cannot be achieved.
JP-A-6-90071.

また、通常、金属ベース回路基板を用いる混成集積回路においては、出力用半導体と前記出力用半導体の動作を制御する制御用半導体が金属ベース回路基板の回路上に共に実装されるが、金属ベース回路基板に要求される特性としては、前者については静電容量は若干大きいが熱伝導性に優れる特性が要求され、後者については熱伝導率は若干犠牲にしても静電容量が極めて低い特性が要求される。 Usually, in a hybrid integrated circuit using a metal base circuit board, an output semiconductor and a control semiconductor for controlling the operation of the output semiconductor are both mounted on the circuit of the metal base circuit board. As the characteristics required for the substrate, the former requires slightly higher capacitance but excellent thermal conductivity, and the latter requires extremely low capacitance even at the expense of thermal conductivity. Is done.

しかしながら、制御用半導体を静電容量が極めて低くなるように工夫された回路上に載置する時、場合によっては、制御用半導体からの補熱放散が十分でなく、動作時間を十分に確保出来ない場合があることが判った。 However, when the control semiconductor is placed on a circuit designed to have a very low capacitance, in some cases, the supplementary heat dissipation from the control semiconductor is not sufficient, and sufficient operating time can be secured. It turns out that there may not be.

本発明者は、前記の問題解決を図るためにいろいろ検討した結果、少なくとも制御半導体と直接電気接続されている回路部分の下部に低誘電率部分を設けるときに、制御半導体からの熱を十分に放散し、しかも雑音特性に優れ、十分に高周波動作にも対応できる混成集積回路が得られるという知見を得て、本発明に至ったものである。 As a result of various studies to solve the above problems, the present inventor has sufficiently provided heat from the control semiconductor when providing a low dielectric constant portion at least below the circuit portion that is directly electrically connected to the control semiconductor. The inventor has obtained the knowledge that a hybrid integrated circuit that can dissipate, has excellent noise characteristics, and can sufficiently handle high-frequency operation is obtained.

即ち、本発明は、同一回路基板上において、部分的に基板特性を変化させることで、多様な種類の半導体素子や電子部品等を搭載できるようにすることを可能とし、特に、制御用半導体や出力用半導体を併せ持つ混成集積回路用に好適な金属ベース回路基板を提供することを目的としている。 That is, the present invention makes it possible to mount various types of semiconductor elements and electronic components by partially changing the substrate characteristics on the same circuit board. An object of the present invention is to provide a metal base circuit board suitable for a hybrid integrated circuit having an output semiconductor.

本発明は、金属板と、前記金属板上に設けられた絶縁層と、前記絶縁層上に設けられた回路と、前記回路上に実装される複数の半導体とからなる混成集積回路に用いられる金属ベース回路基板であって、前記回路の半導体搭載部ではない部分の一部について、当該部分の下部の金属板に低誘電率部分を設け、しかも低誘電率部分が、前記金属板の表面に窪み部分を設け、当該窪み部分に無機質充填剤を含有している樹脂を充填したことを特徴とする金属ベース回路基板であり、好ましくは、窪み部分の側壁が35〜65°の傾きを有していることを特徴とする前記の金属ベース回路基板である。 The present invention is used for a hybrid integrated circuit including a metal plate, an insulating layer provided on the metal plate, a circuit provided on the insulating layer, and a plurality of semiconductors mounted on the circuit. a metal base circuit board, some of the semiconductor mounting is not a portion of the circuit, only setting the low dielectric portion in the lower portion of the metal plate of the partial, yet low dielectric portion is, the surface of the metal plate a recess portion provided, a metal base circuit board characterized by being filled with a resin containing an inorganic filler in the recess portion, is favored properly, the inclination of the side wall of the recessed portion 35 to 65 ° The metal-based circuit board as described above.

また、本発明は、無機充填剤が、溶融シリカからなり、しかも前記溶融シリカは、平均粒径0.3〜5.0μmのものを3.5〜45.0体積%、平均粒径6〜30μmのものを18.0〜80.0体積%含有していることを特徴する前記の金属ベース回路基板である。 In the present invention, the inorganic filler is made of fused silica , and the fused silica has an average particle size of 0.3 to 5.0 μm, 3.5 to 45.0% by volume, and an average particle size of 6 to The metal base circuit board is characterized by containing 18.0 to 80.0% by volume of 30 μm.

本発明の金属ベース回路基板は、発熱量の多い制御用半導体を含む複数の半導体を有する混成集積回路に用いられる金属ベース回路基板であり、前記の構造を採用することによって、つまり、制御用半導体と直接接続されている回路下に低誘電部分を存在させることで制御用半導体の動作特性を確保しつつ、制御用半導体で発生した熱は回路そして絶縁層を通じて、直ぐに金属板へと放散されるので、例えば、従来の金属ベース回路基板では適用できなかったマクロストリップライン等の高周波フィルター、高周波電源、オーディオ用のデジタルアンプ等の混成集積回路にも適用が可能となり、産業上新たな用途を拡大出来るという効果を有する。 The metal base circuit board of the present invention is a metal base circuit board used in a hybrid integrated circuit having a plurality of semiconductors including a control semiconductor having a large amount of heat generation. By adopting the above structure, that is, a control semiconductor. The heat generated in the control semiconductor is immediately dissipated to the metal plate through the circuit and the insulation layer, while ensuring the operating characteristics of the control semiconductor by having a low dielectric part under the circuit directly connected to the circuit. Therefore, for example, it can be applied to hybrid integrated circuits such as high frequency filters such as macrostrip lines, high frequency power supplies, and digital amplifiers for audio, which could not be applied to conventional metal base circuit boards. Has the effect of being able to.

また、本発明の金属ベース回路基板は、前記の構造に加え、低誘電部分が特定な形状を有していて、更に特定の溶融シリカが無機充填剤として用いられているので、一層優れた誘電特性を有しており、信頼性高く半導体素子が動作でき、惹いては混成集積回路の動作信頼性を高めることができるという効果がある。 In addition to the above structure, the metal base circuit board of the present invention has a low dielectric portion having a specific shape, and a specific fused silica is used as an inorganic filler. Therefore, the semiconductor element can operate with high reliability, and the operation reliability of the hybrid integrated circuit can be improved.

以下、図を用いて本発明を説明する。 Hereinafter, the present invention will be described with reference to the drawings.

図1は、本発明に係る金属ベース回路基板を用いた混成集積回路の例である。当該混成集積回路に於いては、金属板1と、絶縁層2と、回路5とからなる金属ベース回路基板の、前記回路5上に、複数の半導体、即ち、出力用半導体7と制御用半導体8が搭載されている。出力用半導体7は、熱の放散を助長する目的で、回路5との接続にヒートスプレッダー6を介することが多いが、これを用いないこともある。また、制御用半導体8は、通常大きな発熱をともなわないことから回路5にヒートスプレッダーを介することなく接合されるが、ヒートスプレッダーを介しても勿論構わない。更に、図1に於いて、制御用半導体8からの信号は回路5並びにボンディングワイヤー4を通じて出力用半導体7に電気的に接合されている。本発明は、少なくとも制御用半導体8に直接に電気接続されている回路の下に、低誘電率部分3を設けていることを特徴としており、このような構造を採用することにより、従来の金属ベース回路基板が適用出来なかった、制御用半導体からの補熱放散が十分でなく、動作時間を十分に確保出来ないような用途の混成集積回路にも適用出来るという特徴を有するものである。 FIG. 1 is an example of a hybrid integrated circuit using a metal base circuit board according to the present invention. In the hybrid integrated circuit, a plurality of semiconductors, that is, an output semiconductor 7 and a control semiconductor, are provided on the circuit 5 of a metal base circuit board including a metal plate 1, an insulating layer 2, and a circuit 5. 8 is installed. The output semiconductor 7 is often connected to the circuit 5 via a heat spreader 6 for the purpose of promoting heat dissipation, but this may not be used. In addition, the control semiconductor 8 is usually joined to the circuit 5 without using a heat spreader because it does not generate a large amount of heat. Further, in FIG. 1, a signal from the control semiconductor 8 is electrically joined to the output semiconductor 7 through the circuit 5 and the bonding wire 4. The present invention is characterized in that the low dielectric constant portion 3 is provided at least under a circuit directly electrically connected to the control semiconductor 8. By adopting such a structure, a conventional metal is provided. The present invention is characterized in that it can be applied to a hybrid integrated circuit for a purpose in which the base circuit board cannot be applied, the supplementary heat dissipation from the control semiconductor is insufficient, and the operation time cannot be sufficiently secured.

本発明において、金属板1に代えてその一部に、当該金属板よりも低誘電率の材質のものを置換すればよく、その材質に格別の制限はないが、例えば、金属板1の表面に窪み部分を設け、当該窪み部分に無機質充填剤を含有している樹脂を充填したものであることが、従来公知の金属ベース回路基板の製造方法を大きな工程変更をすることなく得ることができ、しかも絶縁層2並びに金属板1との接合性に富むものを選択しやすいことから、格別に好ましい。 In the present invention, instead of the metal plate 1, a part of the metal plate 1 may be replaced with a material having a dielectric constant lower than that of the metal plate, and the material is not particularly limited. It is possible to obtain a conventionally known method for manufacturing a metal base circuit board without making a major process change, by providing a recess in the substrate and filling the recess with a resin containing an inorganic filler. Moreover, since it is easy to select a material having excellent bonding properties with the insulating layer 2 and the metal plate 1, it is particularly preferable.

また、前記窪み部分に関しては、本発明者の検討に拠れば、その側壁が35〜65°の傾きを有していることが好ましい。35°未満の場合には、側壁部の面積が大きくなり、静電容量を確保するために窪み部分を十分に大きくする必要があるし、65°を越える傾きの場合には窪み部分の側壁と底面とに角が有る場合に当該角部に空隙を残留しやすく、いずれの場合も得られる金属ベース回路基板の電気的特性を劣化する場合が起こりやすくなる。更に、窪み部分の底面形状に関しては、格別これを定める必要はないものの、平面状であることが、金属板に窪みを形成させる方法として、プレス加工、切削加工等の機械的方法或いは化学薬品によるエッチング等の化学的方法等の量産性に優れる製造方法を適用出来ることから、好ましい。 Further, with respect to the recessed portion, it is preferable that the side wall thereof has an inclination of 35 to 65 ° according to the study of the present inventor. If the angle is less than 35 °, the area of the side wall portion becomes large, and it is necessary to sufficiently increase the recessed portion in order to ensure the capacitance. In the case where there is a corner with the bottom surface, a gap is likely to remain in the corner portion, and in any case, the electrical characteristics of the obtained metal base circuit board are likely to deteriorate. Furthermore, although it is not necessary to specifically define the bottom surface shape of the hollow portion, the flat shape is a mechanical method such as pressing or cutting, or a chemical as a method for forming the hollow on the metal plate. This is preferable because a manufacturing method excellent in mass productivity such as a chemical method such as etching can be applied.

更に、窪み部の形状については、金属ベース回路基板を上方より眺めた時に凹部の広がりが、混成集積回路として使用されるときに、制御用半導体を搭載する回路、高周波等の信号の伝わる回路より大きければ良く、厚さ(深さ)については、絶縁層を形成する絶縁接着剤の材質等によって異なるものの、通常50〜800μmあれば良い。また、窪み部深さは個々の窪み部により変化しても構わないが、いずれも同じ深さとするとき一度に加工できることから好ましい。 Furthermore, as for the shape of the recess, when the metal base circuit board is viewed from above, the recess is wider than the circuit on which the control semiconductor is mounted and the circuit for transmitting a signal such as a high frequency when used as a hybrid integrated circuit. What is necessary is just to be large, and although thickness (depth) changes with materials of the insulating adhesive which forms an insulating layer, etc., it should usually be 50-800 micrometers. Further, the depth of the dent may vary depending on the individual dent, but it is preferable because all can be processed at the same depth.

更に、本発明において、前記窪み部分に充填する無機質充填剤を含有している樹脂については、低誘電率であればどのようなものでも構わないが、高熱伝導性であることが好ましい。 Furthermore, in the present invention, the resin containing the inorganic filler that fills the hollow portion may be any resin having a low dielectric constant, but preferably has high thermal conductivity.

前記無機質充填剤としては、酸化アルミニウム、酸化ケイ素、窒化アルミニウム、窒化硼素等が挙げられ、このうち酸化アルミニウム、酸化ケイ素、窒化硼素は低誘電率と高熱伝導率とをバランス良く低誘電率部分が得られるので好ましい。無機質充填剤の構成粒子の形状に特に規定はないが、流動性向上のため球状ものが好ましく、さらに空洞を有する無機質充填剤を用いると低誘電率部分の誘電率が更に低下し一層好ましい。ことに、本発明者の検討結果に拠れば、平均粒径0.3〜5.0μmのものを3.5〜45.0体積%、平均粒径6〜30μmのものを18.0〜80.0体積%含有している溶融シリカは、高充填性に優れ、その結果として、低誘電率と高熱伝導率とのバランスの良い低誘電率部分が安定して確実に得られることから、一層好ましい。 Examples of the inorganic filler include aluminum oxide, silicon oxide, aluminum nitride, boron nitride, etc. Among them, aluminum oxide, silicon oxide, boron nitride has a low dielectric constant portion with a good balance between low dielectric constant and high thermal conductivity. Since it is obtained, it is preferable. There are no particular restrictions on the shape of the constituent particles of the inorganic filler, but spherical particles are preferable for improving fluidity, and the use of an inorganic filler having cavities is more preferable because the dielectric constant of the low dielectric constant portion is further lowered. In particular, according to the results of the study of the present inventors, those having an average particle size of 0.3 to 5.0 μm are 3.5 to 45.0% by volume, and those having an average particle size of 6 to 30 μm are 18.0 to 80. The fused silica containing 0.0% by volume is excellent in high filling property, and as a result, a low dielectric constant portion having a good balance between low dielectric constant and high thermal conductivity can be obtained stably and reliably. preferable.

前記樹脂に関しては、エポキシ樹脂、フェノール樹脂、ポリイミド樹脂などの熱硬化性樹脂、各種エンジニアプラスチック、或いはポリエチレン、ポリプロピレン、塩化ビニリデン、ポリエチレンテレフタレート、ABS樹脂、AS樹脂などの熱可塑性樹脂、更に、アクリル樹脂、シリコーン樹脂、ウレタン樹脂などが用いることができるが、このうち絶縁層と同じ樹脂を用いることが好ましく、また、金属板との密着性が良いことからエポキシ樹脂が好ましく用いられる。 Regarding the resin, thermosetting resins such as epoxy resin, phenol resin, polyimide resin, various engineer plastics, thermoplastic resins such as polyethylene, polypropylene, vinylidene chloride, polyethylene terephthalate, ABS resin, AS resin, and acrylic resin Silicone resin, urethane resin, and the like can be used. Of these, it is preferable to use the same resin as the insulating layer, and epoxy resin is preferably used because of its good adhesion to the metal plate.

本発明に於いて、金属板としては、熱伝導性に優れた材質のものであればどのようなものであっても構わないが、アルミニウム、アルミニウム合金、銅及び銅合金が高熱伝導であることから、好ましく選択される。また、金属板の厚みとしては、特に制限はないが0.3mm〜4.0mmが一般的に用いられる。 In the present invention, the metal plate may be any material as long as it has excellent thermal conductivity, but aluminum, aluminum alloy, copper and copper alloy have high thermal conductivity. Are preferably selected. Moreover, there is no restriction | limiting in particular as thickness of a metal plate, but 0.3 mm-4.0 mm are generally used.

本発明に於いて、絶縁層の組成、特性も極めて重要である。絶縁層は、無機質充填剤を含有する樹脂で構成され、前記無機質充填剤としては、アルミナ(酸化アルミニウム)、窒化硼素、マグネシア(酸化マグネシウム)、硫酸バリウム、酸化亜鉛、シリカ、窒化ケイ素、窒化アルミニウム等の電気絶縁性の無機化合物が用いられ、アルミナ、窒化硼素、窒化アルミニウム、シリカが安価で入手容易であることから、好ましく用いられる。このうち、アルミナ並びに窒化アルミニウムは球状で高充填でき、極めて高熱伝導性の絶縁層を容易に得ることができることから一層好ましく選択される。 In the present invention, the composition and characteristics of the insulating layer are also extremely important. The insulating layer is made of a resin containing an inorganic filler. Examples of the inorganic filler include alumina (aluminum oxide), boron nitride, magnesia (magnesium oxide), barium sulfate, zinc oxide, silica, silicon nitride, and aluminum nitride. An electrically insulating inorganic compound such as Alumina, Boron Nitride, Aluminum Nitride and Silica are preferably used because they are inexpensive and readily available. Among these, alumina and aluminum nitride are more preferably selected because they can be spherical and highly filled, and an insulating layer with extremely high thermal conductivity can be easily obtained.

樹脂としては、エポキシ樹脂、フェノール樹脂、ポリイミド樹脂などの熱硬化性樹脂、各種エンジニアプラスチック、或いはポリエチレン、ポリプロピレン、塩化ビニリデン、ポリエチレンテレフタレート、ABS樹脂、AS樹脂などの熱可塑性樹脂、更に、アクリル樹脂、シリコーン樹脂、ウレタン樹脂、フッ素樹脂などが用いられるが、特に、金属板との接合性に富むことからエポキシ樹脂が好ましく選択される。 Examples of the resin include thermosetting resins such as epoxy resins, phenol resins, polyimide resins, various engineer plastics, thermoplastic resins such as polyethylene, polypropylene, vinylidene chloride, polyethylene terephthalate, ABS resins, AS resins, acrylic resins, Silicone resin, urethane resin, fluororesin, and the like are used. In particular, epoxy resin is preferably selected because of its excellent bondability with a metal plate.

即ち、本発明に於いては、無機質充填剤と樹脂との組み合わせに関して、アルミナ、窒化硼素、窒化アルミニウム、シリカの1種以上を含有するエポキシ樹脂が、金属板や回路を形成する金属箔との密着力が高く、しかも硬化後に熱伝導率の高い絶縁層や静電容量の小さな絶縁層を容易に得ることができるので、好ましい組み合わせである。また、前記低誘電率部分を構成する無機質充填剤を含有する樹脂についても同様である。 That is, in the present invention, regarding the combination of an inorganic filler and a resin, an epoxy resin containing at least one of alumina, boron nitride, aluminum nitride, and silica is used as a metal plate or a metal foil forming a circuit. This is a preferable combination because an insulating layer having a high adhesive force and having a high thermal conductivity after curing and an insulating layer having a small capacitance can be easily obtained. The same applies to the resin containing the inorganic filler constituting the low dielectric constant portion.

未硬化状態の無機質充填剤を含有する樹脂(以下、単に「絶縁接着剤」という)の所定部分への塗布方法としては、一般的に、ロールコーター、グラビアコーター、寄付コーター、スクリーン印刷等を用いることができる。また、絶縁剤接着剤は、単一層もしくは複数層にする。複数層の場合、工程が長くなる分コストアップになるが、耐絶縁破壊特性が向上するとともに、絶縁層の厚さ精度を向上させることができる特徴がある。 Generally, a roll coater, a gravure coater, a donation coater, screen printing, or the like is used as a method of applying a resin containing an uncured inorganic filler (hereinafter simply referred to as “insulating adhesive”) to a predetermined portion. be able to. Further, the insulating adhesive is a single layer or a plurality of layers. In the case of a plurality of layers, the cost is increased due to the length of the process, but there is a feature that the dielectric breakdown resistance is improved and the thickness accuracy of the insulating layer can be improved.

本発明に於いて、回路並びにそれを形成するための金属箔の材質としては、銅、アルミニウム、ニッケル、鉄、錫、銀、チタニウムのいずれか、これらの金属を2種類以上含む合金、或いは前記金属又は合金を使用したクラッド箔等を用いることができる。また、前記金属箔の製造方法は電解法でも圧延法で作製したものでもよく、金属箔上にはNiメッキ、Ni−Auメッキ、半田メッキなどの金属メッキがほどこされていてもかまわないが、絶縁接着剤との接着性の点から金属箔(回路)の絶縁接着剤に接する側の表面はエッチングやメッキ等により予め粗化処理されていることが一層好ましい。 In the present invention, the material of the circuit and the metal foil for forming the circuit is any one of copper, aluminum, nickel, iron, tin, silver, titanium, an alloy containing two or more of these metals, or the above A clad foil using a metal or an alloy can be used. In addition, the method for producing the metal foil may be one produced by an electrolytic method or a rolling method, and metal plating such as Ni plating, Ni-Au plating, or solder plating may be applied on the metal foil. From the viewpoint of adhesiveness with the insulating adhesive, it is more preferable that the surface of the metal foil (circuit) on the side in contact with the insulating adhesive is roughened in advance by etching, plating, or the like.

本発明の金属ベース回路基板の回路には、絶縁層を介して金属板に接しているものと、絶縁層と低誘電率部分とを介して金属板に接しているものとがある。本発明の金属ベース回路基板を用いて混成集積回路を製造する際に、後者の回路上に抵抗チップ並びにコンデンサチップ等の制御用電子部品を搭載することで、制御用半導体からの信号の歪みを低減することができるし、また、前者の回路上に出力用半導体や制御用半導体等を搭載することで、半導体の過度の温度上昇とそれによる誤動作を防止することができ、その結果、混成集積回路全体として高信頼性の動作を確保することができるという効果を得ることができる。 Some of the circuits of the metal base circuit board of the present invention are in contact with a metal plate through an insulating layer, and others are in contact with the metal plate through an insulating layer and a low dielectric constant portion. When a hybrid integrated circuit is manufactured using the metal base circuit board of the present invention, a control electronic component such as a resistor chip and a capacitor chip is mounted on the latter circuit, so that signal distortion from the control semiconductor is reduced. In addition, by mounting an output semiconductor, control semiconductor, etc. on the former circuit, it is possible to prevent an excessive temperature rise of the semiconductor and a malfunction caused thereby, and as a result, hybrid integration The effect that a highly reliable operation can be ensured for the entire circuit can be obtained.

150mm×150mm×1.5mmのアルミニウム板上の所望の位置に、熱硬化型レジストインクを塗布し、エッチングにより深さ300μm、窪み部分の側壁の傾きを43°に形成した後、レジストインクを除去した。 A thermosetting resist ink is applied to a desired position on an aluminum plate of 150 mm x 150 mm x 1.5 mm, etched to form a depth of 300 µm, and the inclination of the side wall of the depression is 43 °, and then the resist ink is removed. did.

その後、ビスフェノールA型液状エポキシ樹脂(ジャパンエポキシレジン社製、EP828)へ平均粒径2μmのアルミナ(日本軽金属社製、LS−20)を45体積%含有するように配合し、混合して絶縁接着剤Aを作製した。 Then, blended into bisphenol A type liquid epoxy resin (Japan Epoxy Resin, EP828) so as to contain 45% by volume of alumina (Nippon Light Metal Co., Ltd., LS-20) with an average particle size of 2 μm, and mixed to insulate Agent A was prepared.

また、ビスフェノールA型液状エポキシ樹脂(ジャパンエポキシレジン社製、EP828)へ平均粒径1.7μmの溶融球状シリカ(電気化学工業社製、FB−1SDX)37体積%と平均粒径11.3の溶融球状シリカ(電気化学工業社製、FB−550)を40体積%含有するように配合し、混合して絶縁接着剤Bを作製した。 Moreover, bisphenol A type liquid epoxy resin (Japan Epoxy Resin, EP828) fused spherical silica (FB-1SDX, manufactured by Denki Kagaku Kogyo Co., Ltd.) with an average particle size of 1.7 μm and an average particle size of 11.3. An insulating adhesive B was prepared by blending so as to contain 40% by volume of fused spherical silica (manufactured by Denki Kagaku Kogyo Co., Ltd., FB-550).

絶縁接着剤Bを、前記窪み部を有するアルミニウム板上に塗布した後、前記絶縁接着剤Aを窪み部以外の部分の絶縁層の厚さが50μmになるように塗布した。更に、銅箔を前記絶縁接着剤A上にラミネートして金属ベース基板を得た。 Insulating adhesive B was applied on the aluminum plate having the recesses, and then the insulating adhesive A was applied so that the insulating layer in a portion other than the recesses had a thickness of 50 μm. Further, a copper foil was laminated on the insulating adhesive A to obtain a metal base substrate.

前記金属ベース基板について、所望の位置をエッチングレジストでマスクして銅箔をエッチングした後、エッチングレジストを除去し洗浄乾燥することで、回路を形成し、金属ベース回路基板とした。回路形成に当たり、前記窪み部分のある位置に制御用半導体から直接に電気接続される抵抗チップやコンデンサが搭載される回路を形成し、また、前記窪み部分のない位置には、出力用半導体や制御用半導体を搭載する回路を形成した。 With respect to the metal base substrate, a copper foil was etched by masking a desired position with an etching resist, and then the etching resist was removed, followed by washing and drying, thereby forming a circuit to obtain a metal base circuit substrate. When forming a circuit, a circuit is formed in which a resistor chip or a capacitor that is directly electrically connected from the control semiconductor is mounted at a position where the recess is present, and an output semiconductor or control is provided where there is no recess. A circuit for mounting semiconductors was formed.

前記操作で得られた金属ベース回路基板について、絶縁破壊電圧および単位面積あたりの静電容量を測定した。絶縁破壊電圧の測定は、JIS C2110に基づき測定した。また、前記単位面積当たりの静電容量の測定にあたっては、LCRメーターにより測定周波数1MHzのときの静電容量を求めるとともに、当該測定部分の回路の絶縁接着剤と接する部分の面積を求め、前記静電容量を前記回路面積で除して求めた。金属ベース回路基板の主要な作製条件と測定結果を表1に示す。

Figure 0004326366
About the metal base circuit board obtained by the said operation, the dielectric breakdown voltage and the electrostatic capacitance per unit area were measured. The breakdown voltage was measured according to JIS C2110. In measuring the electrostatic capacity per unit area, the electrostatic capacity at a measurement frequency of 1 MHz is obtained by an LCR meter, and the area of the measurement part in contact with the insulating adhesive is obtained. The capacitance was obtained by dividing by the circuit area. Table 1 shows main production conditions and measurement results of the metal base circuit board.
Figure 0004326366

次に、前記金属ベース回路基板を用いて、図1に例示される、混成集積回路を作成した。尚、当該混成集積回路は、制御用半導体としてはデジタル信号IC、出力用半導体としてMOS−FETを搭載したデジタルアンプである。この混成集積回路を動作周波数1.2MHzで動作させたところ、正常に動作することを確認した。 Next, a hybrid integrated circuit illustrated in FIG. 1 was prepared using the metal base circuit board. The hybrid integrated circuit is a digital amplifier equipped with a digital signal IC as a control semiconductor and a MOS-FET as an output semiconductor. When this hybrid integrated circuit was operated at an operating frequency of 1.2 MHz, it was confirmed that it operated normally.

(比較例)実施例1において、窪みのない、平坦なアルミニウム板を用い、また、当該アルミニウム板上に絶縁接着剤Aを50μmの厚みで塗布したこと以外は、実施例1と同じ手順で、金属ベース基板、そして金属ベース回路基板を作製した。この金属ベース回路基板の測定結果は表1に併せて示した。更に、実施例1同様にデジタルアンプを作製し、動作確認を行ったが、誤動作した。 (Comparative example) In Example 1, the same procedure as in Example 1 was used except that a flat aluminum plate having no depression was used, and that the insulating adhesive A was applied to the aluminum plate in a thickness of 50 μm. A metal base substrate and a metal base circuit board were produced. The measurement results of this metal base circuit board are also shown in Table 1. Further, a digital amplifier was manufactured in the same manner as in Example 1, and the operation was confirmed.

本発明の金属ベース回路基板は、静電容量が小さいので出力用半導体を制御する抵抗チップやコンデンサ等の電子部品を搭載するのに好適な回路部分と、静電容量は若干大きいものの熱伝導性に優れるので放熱が必要な出力用半導体や制御用半導体を搭載するのに好適な回路部分とを併せ持っており、動作信頼性の高い混成集積回路を提供できるので、産業上非常に有用である。 Since the metal base circuit board of the present invention has a small electrostatic capacity, a circuit portion suitable for mounting electronic components such as a resistor chip and a capacitor for controlling an output semiconductor, and a thermal conductivity having a slightly large electrostatic capacity. It has excellent circuit performance and a circuit portion suitable for mounting an output semiconductor and a control semiconductor that require heat dissipation, and can provide a hybrid integrated circuit with high operational reliability, which is very useful in the industry.

本願発明の金属ベース回路基板を用いた混成集積回路の一例を示す図。The figure which shows an example of the hybrid integrated circuit using the metal base circuit board of this invention.

符号の説明Explanation of symbols

1 金属板
2 絶縁層
3 低誘電率部分
4 ボンディングワイヤー
5 回路
6 ヒートスプレッダー
7 出力用半導体
8 制御用半導体
DESCRIPTION OF SYMBOLS 1 Metal plate 2 Insulating layer 3 Low dielectric constant part 4 Bonding wire 5 Circuit 6 Heat spreader 7 Semiconductor for output 8 Semiconductor for control

Claims (3)

金属板と、前記金属板上に設けられた絶縁層と、前記絶縁層上に設けられた回路と、前記回路上に実装される複数の半導体とからなる混成集積回路に用いられる金属ベース回路基板であって、前記回路の半導体搭載部ではない部分の一部について、当該回路部分の下部の金属板に低誘電率部分を設け、しかも低誘電率部分が、前記金属板の表面に窪み部分を設け、当該窪み部分に無機質充填剤を含有している樹脂を充填したことを特徴とする金属ベース回路基板 Metal base circuit board used for a hybrid integrated circuit comprising a metal plate, an insulating layer provided on the metal plate, a circuit provided on the insulating layer, and a plurality of semiconductors mounted on the circuit And, for a part of the circuit that is not a semiconductor mounting portion, a low dielectric constant portion is provided on a metal plate below the circuit portion , and the low dielectric constant portion has a depression on the surface of the metal plate. A metal-based circuit board, characterized in that the recess is filled with a resin containing an inorganic filler . 窪み部分の側壁が35〜65°の傾きを有していることを特徴とする請求項記載の金属ベース回路基板。 Metal base circuit board according to claim 1, wherein the side wall of the recessed portion, characterized in that it has an inclination of 35 to 65 °. 無機質充填剤が、溶融シリカからなり、しかも前記溶融シリカは、平均粒径0.3〜5.0μmのものを3.5〜45.0体積%、平均粒径6〜30μmのものを18.0〜80.0体積%含有していることを特徴する請求項1又は請求項2記載の金属ベース回路基板。 The inorganic filler is made of fused silica , and the fused silica has an average particle size of 0.3 to 5.0 μm, 3.5 to 45.0% by volume, and an average particle size of 6 to 30 μm. 3. The metal base circuit board according to claim 1, wherein the metal base circuit board contains 0 to 80.0% by volume.
JP2004042993A 2003-04-15 2004-02-19 Metal base circuit board Expired - Fee Related JP4326366B2 (en)

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JP2004042993A JP4326366B2 (en) 2004-02-19 2004-02-19 Metal base circuit board
PCT/JP2004/005365 WO2004093186A1 (en) 2003-04-15 2004-04-15 Metal-base circuit board and its manufacturing method
EP04727676.1A EP1615267B1 (en) 2003-04-15 2004-04-15 Hybrid integrated circuit comprising a metal-base circuit board and its manufacturing method
SG200802901-9A SG162619A1 (en) 2003-04-15 2004-04-15 Metal base circuit board and its production process
SG200802903-5A SG163439A1 (en) 2003-04-15 2004-04-15 Metal base circuit board and its production process
MXPA05011216A MXPA05011216A (en) 2003-04-15 2004-04-15 Metal-base circuit board and its manufacturing method.
CA2773085A CA2773085A1 (en) 2003-04-15 2004-04-15 Metal base circuit board and its production process
CA2773112A CA2773112A1 (en) 2003-04-15 2004-04-15 Metal base circuit board and its production process
CA2520241A CA2520241C (en) 2003-04-15 2004-04-15 Metal base circuit board and its production process
US10/553,076 US7709939B2 (en) 2003-04-15 2004-04-15 Metal-base circuit board and its manufacturing method
KR1020107028252A KR101097075B1 (en) 2003-04-15 2004-04-15 Metal-base circuit board and its manufacturing method
CA2773076A CA2773076A1 (en) 2003-04-15 2004-04-15 Metal base circuit board and its production process
SG200802902-7A SG162620A1 (en) 2003-04-15 2004-04-15 Metal base circuit board and its production process
KR1020107028250A KR101162133B1 (en) 2003-04-15 2004-04-15 Metal-base circuit board and its manufacturing method
KR1020107028251A KR101097076B1 (en) 2003-04-15 2004-04-15 Metal-base circuit board and its manufacturing method
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