JP4329280B2 - Method for manufacturing thin film solar cell - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a thin-film solar cell, and more particularly to a method for processing a thin-film substrate through-hole for forming a plurality of predetermined through-holes in a substrate.
[0002]
[Prior art]
Conventional thin-film solar cells have used glass substrates, but research and development of flexible solar cells using plastic films are being promoted in terms of weight reduction, workability, and mass productivity. Furthermore, the thing using the film substrate which carried out the insulation coating to the flexible metal material is also developed. Taking advantage of this flexibility, mass production became possible by a roll-to-roll method or a stepping roll method.
[0003]
In the above thin film solar cell, a first electrode (hereinafter also referred to as a lower electrode), a photoelectric conversion layer comprising a thin film semiconductor layer, and a second electrode (hereinafter also referred to as a transparent electrode) are laminated on a flexible electrically insulating film substrate. A plurality of photoelectric conversion elements (or cells) thus formed are formed. By repeating electrically connecting the first electrode of a certain photoelectric conversion element and the second electrode of the adjacent photoelectric conversion element, the first electrode of the first photoelectric conversion element and the second electrode of the last photoelectric conversion element Can output the voltage required for For example, in order to obtain an alternating current of 100 V as a commercial power source by alternating current with an inverter, the output voltage of the thin-film solar cell is desirably 100 V or higher, and actually several tens or more elements are connected in series.
[0004]
Such a photoelectric conversion element and its series connection are formed by forming an electrode layer and a photoelectric conversion layer, patterning each layer, and a combination procedure thereof. As an example of the configuration and manufacturing method of the above solar cell, the applicant of the present application has proposed a so-called SCAF (Series Connection through Apertures on Film) type thin film solar cell. For example, Japanese Patent Application Laid-Open No. 10-233517 and Japanese Patent Application No. 11-19306.
[0005]
FIG. 12 shows an example of the thin film solar cell described in the above-mentioned Japanese Patent Laid-Open No. 10-233517, (a) is a plan view, and (b) is a cross-sectional view taken along lines ABCD and BQC in (a). Yes, (c) shows an EE cross-sectional view in (a).
[0006]
A first electrode layer, a photoelectric conversion layer, and a second electrode layer are sequentially laminated on a long film substrate made of an electrically insulating and flexible resin, and a third electrode layer is formed on the opposite side (back surface) of the film substrate. The fourth electrode layer is laminated to form a back electrode. The photoelectric conversion layer is, for example, an amorphous silicon pin junction. As the film substrate material, a polyimide film, for example, a film having a thickness of 50 μm is used.
[0007]
As the material for the film, polyethylene naphthalate (PEN), polyethersulfone (PES), polyethylene terephthalate (PET), or an aramid film can be used.
[0008]
Next, the outline of the manufacturing process will be described below.
[0009]
First, using a punch in the film substrate, for example, a connection hole h1 having a diameter of about 1 mm is opened, and silver is formed to a thickness of, for example, 100 nm by sputtering as a first electrode layer on one side (front side) of the substrate. On the opposite surface (back side), a silver electrode is also formed as the third electrode layer. The first electrode layer and the third electrode layer overlap with each other on the inner wall of the connection hole h1, and are electrically connected.
[0010]
As the electrode layer, in addition to silver (Ag), a metal such as Al, Cu, Ti or the like may be formed by sputtering or electron beam evaporation, or a metal oxide film and a metal multilayer film may be used as the electrode layer. After the film formation, on the front side, the first electrode layer is laser processed into a predetermined shape, and the lower electrodes 11 to 16 are patterned. Adjacent portions of the lower electrodes l1 to l6 form one separation line g2, and two separation lines g2 are formed for separation between the two series-connected photoelectric conversion elements and the peripheral conductive portion f. The electrodes l1 to l6 are surrounded by a separation line. After using the punch again to open the current collecting hole h2, an a-Si layer is formed as a photoelectric conversion layer P on the front side by plasma CVD. A film having a width W2 is formed using a mask, and the same separation line as that of the first electrode layer is formed only between the two-row elements by laser processing. The width W2 may extend over the connection hole h1.
[0011]
Further, a transparent electrode layer (ITO layer) is formed on the front side as the second electrode layer. However, a mask is applied between the two element rows and on both side edges of the substrate parallel to the element row so as not to form the film in the connection hole h1, and the film is formed only on the element part. As the transparent electrode layer, in addition to ITO (Indium Sulfoxide), an oxide conductive layer such as SnO 2 or ZnO can be used.
[0012]
Next, a layer made of a low-resistance conductive film such as a metal film is formed as a fourth electrode layer on the entire back surface. By forming the fourth electrode, the second electrode and the fourth electrode overlap with each other on the inner wall of the current collecting hole h2, and are brought into conduction. On the front side, separation lines having the same pattern as the lower electrode are formed by laser processing to form individual second electrodes u1 to u6, and on the back side, the third electrode and the fourth electrode are simultaneously laser processed to provide connection electrodes e12 to e56. In addition, the power extraction electrodes o1 and o2 are individualized, the separation line g2 is formed so as to overlap the front-side separation line g3 at the periphery of the substrate, and a single separation line is formed between the adjacent electrodes.
[0013]
There is a separation line g3 at the periphery that encloses all the thin-film solar cell elements in a lump and the adjacent boundary between the two rows of series-connected solar cell elements (inside the peripheral conductive part f). There are no layers in the separation line g3. On the back side, there is a separation line g2 (inside the peripheral conductive portion f) at the peripheral edge that encloses all the electrodes together and at the adjacent boundary of the two rows of series connection electrodes. There are no layers in the separation line g2.
[0014]
In this way, power extraction electrode o1-collection hole h2-upper electrode u1, photoelectric conversion layer, lower electrode l1-connection hole h1-connection electrode e12-upper electrode u2, photoelectric conversion layer, lower electrode l2-connection electrode e23- -The series connection of the photoelectric conversion elements in the order of the upper electrode u6, the photoelectric conversion layer, the lower electrode l6-the connection hole h1-the power extraction electrode o2 is completed.
[0015]
Since the third electrode layer and the fourth electrode layer are electrically at the same potential, in the following description, for convenience of explanation, they may be treated as a single connection electrode layer.
[0016]
FIG. 13 is a perspective view showing a simplified configuration of a thin film solar cell for easy understanding of the structure. In FIG. 13, the unit photoelectric conversion element 62 formed on the front surface of the substrate 61 and the connection electrode layer 63 formed on the back surface of the substrate 61 are completely separated into a plurality of unit units, and are formed by shifting the separation positions. ing. For this reason, the current generated in the photoelectric conversion layer 65 which is an amorphous semiconductor portion of the element 62 is first collected in the transparent electrode layer 66 and then through the current collecting hole 67 (h2) formed in the transparent electrode layer region. And transparent to the element adjacent to the element through a connection hole 68 (h1) for series connection formed in the connection electrode layer 63 and outside the transparent electrode layer area of the element. The lower electrode layer 64 extending to the outside of the electrode layer region is reached, and both elements are connected in series.
[0017]
14 (a) to 14 (g) show a simplified manufacturing process of the thin film solar cell. Using the plastic film 71 as a substrate (step (a)), a connection hole 78 is formed in this (step (b)), and a first electrode layer (lower electrode) 74 and a third electrode layer (connection electrode) are formed on both sides of the substrate. After (part) 73 is formed (step (c)), a current collecting hole 77 is formed at a position away from the connection hole 78 by a predetermined distance (step (D)). There is a step of patterning the lower electrode by laser processing the first electrode layer (lower electrode) 74 into a predetermined shape between the step (c) and the step (D). Omitted.
[0018]
Next, the semiconductor layer 75 to be a photoelectric conversion layer and the transparent electrode layer 76 to be the second electrode layer are sequentially formed on the first electrode layer 74 (step (e) and step (f)), and the third A fourth electrode layer (connection electrode layer) 79 is formed on the electrode layer 73 (step (g)). Thereafter, a thin film on both sides of the substrate 71 is separated using a laser beam to form a series connection structure as shown in FIG.
[0019]
In FIG. 14, the connection between the transparent electrode layer 76 and the fourth electrode layer 79 in the current collecting hole h2 is shown in two layers by overlapping each other. However, in FIG. Are shown as one layer.
[0020]
In the manufacturing process of the thin film solar cell, the step (b) for forming the connection hole 78 and the step (D) for forming the current collecting hole 77 are conventionally performed by punching using a punch or laser using an energy beam such as laser light. It was by processing. However, in the case of an infrared laser such as a YAG laser in laser processing, since unevenness is formed on the inner surface and the periphery of the hole due to heat, the electrode layer may be separated. On the other hand, in the case of a short wavelength laser such as an excimer laser, it is possible to perform processing without forming irregularities, but it is difficult to apply due to inferior mass productivity and high operation cost.
[0021]
Regarding punching using a so-called punch, which is processed using a die composed of a punch and a die, the applicant of the present application has proposed a continuous hole forming apparatus with high mass productivity (see Japanese Patent Application Laid-Open No. 8-139352). . FIG. 15 is a schematic cross-sectional view of an opening device in the thin-film solar cell manufacturing apparatus described in the above publication, and includes a substrate transport unit, a through-hole processing unit, and a processing position detection hole processing unit. The substrate 1a fed from the unwinding roll R1 is sequentially processed at a predetermined number of processing positions at a predetermined position by a hole opening portion P30 for detecting a processing position, a current collecting hole opening portion P20, and a connection hole opening portion P10. After the detection hole, the current collecting hole and the connection hole are opened and cleaned by the cleaning device, the detection hole, the current collecting hole and the connection hole are wound around the winding roll R2. Corresponding to the various hole positions, the transport direction and transport distance of the substrate 1a are controlled using the processing position detection hole as a reference.
[0022]
FIG. 16 is an enlarged schematic view of a hole portion of a conventional hole opening device. The opening portion includes a punch P having a hole cross-section of the substrate, and a die D having the same opening as the stripper plate Ps having an opening portion having the same cross-sectional shape as the punch P. The die D and the punch P are configured to have a predetermined clearance C. The substrate 1a that has been transported and stopped between the die D and the stripper plate Ps is pressed by the stripper plate Ps. In this state, the punch P punches (penetrates) the substrate 1a, and a hole is formed in the substrate 1a.
[0023]
Next, an example of the arrangement of various substrate through holes in the SCAF type thin film solar cell will be described below.
[0024]
FIG. 17 is a plan view showing an example of the arrangement of substrate position detection holes and connection holes. The substrate 1a is opened in the order of the position detection hole h3 and the connection hole h1. The position detection holes h3 are opened at intervals of a predetermined unit pattern of the solar cell, and are used for subsequent transport positioning.
[0025]
First, the position detection hole h3 is opened, and thereafter, the substrate 1a is conveyed by a predetermined distance and stopped, and a row of a plurality of connection holes h1 is formed by one punch operation in the width direction of the film. After repeating this a predetermined number of times, the position detection hole h3 is opened. The distance of the position detection hole h3 is defined as the length of one basic pattern, and by repeating this, a large number of basic patterns can be formed on the long substrate 1a.
[0026]
FIG. 18 is a plan view of a substrate in which current collecting holes are further opened in this example. The interval between the current collecting hole arrays is, for example, 5 mm, but this interval can be set to an arbitrary value depending on the solar cell pattern. In addition, the hole shape in this case does not necessarily need to be a circle. For example, in order to improve the solar cell characteristics, the area of the current collecting hole h2 is as small as possible and the peripheral length is as long as possible. In this example, one line of holes is formed in the substrate transport direction in one operation, but a plurality of lines can be drilled simultaneously to improve the mass productivity.
[0027]
[Problems to be solved by the invention]
By the way, in the method of punching various through holes of the conventional thin film solar cell using the punch as described above, there are the following problems.
[0028]
In the case of opening by the punch, there is a problem that the film substrate surface on the processing surface side is dragged by the punch and a large burr is generated on the back surface side. As a result, a circumferential crack occurs in the first electrode layer 74 formed on the substrate 71 in FIG. For this reason, the photoelectric conversion layer 75 cannot cover the cracks generated in the first electrode layer 74, and the first electrode layer 74 and the third electrode layer 76 come into contact with each other, and the curve factor of the solar cell is lowered. There was a problem of reducing the conversion efficiency.
[0029]
Generally, in punching, it is said that in order to reduce the sagging on the front side and the burrs on the back side as described above, the clearance C between the punch P and the die D should be reduced as much as possible. As the clearance C between the punch P and the die D is reduced, not only the manufacturing cost of the mold is increased, but it is technically difficult to manufacture the punch and the die having a small clearance.
[0030]
In addition, when the above-described opening method is employed, there is a problem that only a cut surface is formed in the shape of the hole, and a cut-out portion (processing residue) remains in the vicinity of the through-hole of the substrate. If such a processing residue is left as it is, there is a possibility that it may cause trouble in film formation in a film forming apparatus or the like that requires an appropriate clean level.
[0031]
The present invention has been made in order to solve the above-described problems, and an object of the present invention is to improve the processing method of the connection hole and the current collecting hole to generate a crack in the first electrode layer. accurate hole drilling without is to provide a manufacturing method of possible thin film solar cell.
[0032]
[Means for Solving the Problems]
In order to solve the above-described problems, according to the present invention, a first electrode layer, a photoelectric conversion layer, and a transparent electrode layer (second electrode layer) as a lower electrode layer are sequentially laminated on the surface of an electrically insulating film substrate. And a third electrode layer and a fourth electrode layer as connection electrode layers formed on the back surface of the substrate, wherein the photoelectric conversion unit and the connection electrode layer are displaced from each other in a unit portion. Separated and adjacent to each other on the surface through a connecting hole for electrical series connection formed outside the transparent electrode layer forming region and a current collecting hole formed in the transparent electrode layer forming region. A method for manufacturing a thin-film solar cell in which unit photoelectric conversion portions are electrically connected in series, wherein the connection hole and the current collecting hole are processed using a die composed of a punch and a die. The punch has an outer diameter at its tip Shall have a blade circularly shaped, the die abut against the back surface of the substrate, and a cylindrical or hollow cylindrical die having a larger outer diameter than the outer diameter of at least the punch, further outer periphery of the punch And a hollow cylindrical member that contacts the surface of the substrate concentrically with the punch axis, the substrate is fixed by the hollow cylindrical member and the cylindrical or hollow cylindrical die, and the processing is performed. and performing the (invention of claim 1).
[0033]
By the above method, the problem of cracking around the first electrode layer by being dragged by the punch is solved, and accurate hole drilling can be performed.
[0034]
In addition, according to the above-described invention, it is related to accurate hole processing and not only suppresses a decrease in hole accuracy due to the pulling force of the punch, but also suppresses a decrease in accuracy of hole displacement due to wrinkles generated in the substrate. In addition, the hole position system can be improved .
[0035]
Further, according to the invention, since the vicinity of the punch of the substrate can be locally fixed from both sides of the substrate, the positional accuracy of the hole is improved without being affected by the wrinkle of the substrate.
[0036]
When the substrate is fixed by the hollow cylindrical member and the cylindrical or hollow cylindrical die, if the pressure for pressing the substrate is too strong, stress is applied to the periphery of the opening and the thin film formed on the substrate and the substrate Since it causes damage, pressure control is required so that this adverse effect does not occur. Further, if the thickness of the substrate contact portion in the two cylindrical members is thin, the tip of the cylinder that serves to hold down plays a role like a punch blade, which is inconvenient for good hole formation. Therefore, the thickness of the tip portion of the cylindrical member needs to be appropriate in relation to the pressure. According to such a manufacturing method, a plate-shaped die is not required in principle, and the processing apparatus can be simplified.
[0037]
When the processing is performed continuously, mechanical deterioration of the punch becomes significant when the material hardness of the die is equal to or higher than the material hardness of the punch due to repeated processing. To avoid this, it is preferably as follows. In other words, the material hardness of the previous Symbol die, it shall be the smaller than the material hardness of the punch. Further, between the front Stories substrate and the die, processed by inserting a small consisting intermediate protective plate than the material hardness of the punch and die.
[0038]
Further, from the viewpoint of improving the mechanical durability of the punch, in the manufacturing method according to claim 1 , when the die is a cylindrical die, the die is located at a portion corresponding to the punch blade on the die. A concave groove for preventing the circular blade portion of the punch from coming into contact with the die during processing is provided (invention of claim 2 ).
[0039]
For example, the same groove and the blade shape of the punch is formed on the die, at the time of hole machining, punch is not brought down until it contacts the die, by bring down to a position on the back side of the film substrate surface, punch Mechanical durability can be significantly increased, and a manufacturing method with high mass productivity can be provided.
[0040]
Furthermore, from the viewpoint of avoiding the occurrence of cracks caused by the film substrate being dragged by the punch, the invention of claim 3 is preferable. That is, in the manufacturing method according to claim 1 , when the die is a hollow cylindrical die, a second punch facing the punch is provided in the hollow cylindrical portion of the die, and the substrate is formed by two punches. Process from both front and back sides. In this case, it is necessary to replace the punches relatively early due to mechanical deterioration caused by the contact of the two punches, but it is possible to form a good hole that does not cause a problem of substrate dripping.
[0041]
From the viewpoint of performing a safe separation and removal from the substrate of the aforementioned processing residue, rather it is preferably to the production method described below, describes the various preferred methods for reference. That is, a photoelectric conversion part formed by sequentially laminating a first electrode layer as a lower electrode layer, a photoelectric conversion layer, and a transparent electrode layer (second electrode layer) on the surface of an electrically insulating film substrate, and a back surface of the substrate A third electrode layer and a fourth electrode layer as connection electrode layers formed on the substrate, wherein the photoelectric conversion portion and the connection electrode layer are separated from each other into unit parts by shifting positions from each other, and outside the transparent electrode layer formation region The adjacent unit photoelectric conversion parts separated from each other on the surface are electrically connected in series via the connection hole for electrical series connection formed in 1 and the current collection hole formed in the transparent electrode layer formation region. A thin-film solar cell manufacturing method, wherein the connection hole and the current collecting hole are processed using a die composed of a punch and a die, and the pressure-sensitive adhesive sheet is conveyed to the processed substrate by a roll. Touch and stick The processing residue bonded to you separated off from the substrate.
[0042]
Further, in the prior SL Manufacturing method, instead of the method for removing machining residues by the adhesive sheet, the discharge port of the compressed gas in the central portion of the punch is provided, by a blow of the compressed gas, removing and separating the processing residue from a substrate you. Further, in the above manufacturing method, instead of the method for removing machining residues by the adhesive sheet, the suction opening of the air provided in the central portion of the punch, by suction of the air, it separated off processing residue from a substrate.
[0043]
The front SL in place of the method for removing machining residues by the adhesive sheet, the movable rod-like member provided in a central portion of the punch, by pressing the projecting processing residue toward the bar-like member in processing residue, processing residue the separated and removed from the substrate. Furthermore, prior SL in place of the method for removing machining residues by the adhesive sheet, the mobility of the needle-like member provided in a central portion of the punch and pierce the processing residue is projected toward the needle-like member to the processing residue after the processing residue is accommodated in said punch it separated off from the substrate.
[0044]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of the present invention will be described below with reference to FIGS .
[0045]
Various preferred manufacturing methods described up to the above-mentioned reference are also described below as reference examples based on FIGS. 1 to 3 and FIGS.
[0046]
FIG. 1 to FIG. 6 are enlarged schematic views of apertures related to different reference examples and examples of the through hole processing method of the present invention. The following description will focus on differences from the conventional method described above. In the following reference examples and examples, a polyimide film having a thickness of 0.05 mm was used as the film substrate, but an insulating plastic film such as PEN, PES, PET, or aramid can also be used. The arrangement of the through holes is the same as that shown in FIG.
[0047]
The reference example shown in FIG. 1 shows a method in which a substrate 1a is sandwiched and pressed between a flat plate die D2 and a stripper plate Ps, and processing is performed by the punch P1. In FIG. 1, in order to increase the mechanical life of the punch P1, a carbide P1 is used for the punch P1, a high-speed steel is used for the die D2, and the quenching condition is HRC55. The material used is not limited to this. For example, the punch P1 is made of high-speed steel, the quenching condition is HRC65, and the quenching condition on the die D2 side is weaker than the punch P1 side. What is necessary is just to make it higher than the hardness of die | dye D2.
[0048]
FIG. 2 shows a reference example in which an intermediate protective plate G1 made of a material having a lower hardness than the punch P1 such as rubber is inserted between the substrate 1a and the die D2. Also in this case, the material G1 to be inserted may be lower than the hardness of the punch P1, and the material is not limited.
[0049]
Figure 3 is a different show Reference Example, showing a reference example in which a similar groove Do and punch blade shape die D2. In this case, during punching, the punch P1 is not dropped until it comes into contact with the die, but is lowered to the position on the back surface side of the substrate 1a, whereby the mechanical durability of the punch can be remarkably improved.
[0050]
Was measured and the characteristics of the thin-film solar cell manufactured by Example, none observed decrease in polarity factors due to the aforementioned cracks, it was confirmed that it is possible to form a satisfactory hole.
[0051]
FIG. 4 shows an embodiment relating to the invention of claim 1 , comprising a hollow cylindrical die W2 and a hollow cylindrical member W1 provided on the outer periphery of the punch, and the die W2 and the hollow cylindrical member W1 are used to form a substrate. 1a is locally fixed and drilled.
[0052]
FIG. 5 shows an embodiment in which the die W2 has a cylindrical shape, and the die W2 is provided with a concave groove Wo similar to the punch blade shape. In the embodiment shown in FIGS. 4 and 5, the material of the punch and the die is preferably smaller in hardness on the die side than on the punch side, as in the above-described embodiment.
[0053]
FIG. 6 shows an embodiment related to the invention of claim 3 and shows an embodiment provided with two punches P1 and P2 across a substrate. According to the embodiment shown in FIGS. 4 to 6, since the substrate 1a is locally fixed and the hole processing is performed, the position accuracy of the hole is improved as described above.
[0054]
Next, FIGS. 7 to 11 show conceptual schematic diagrams relating to different reference examples of the method for separating and removing processing residues in the through hole processing of the present invention.
[0055]
FIG. 7 shows a conceptual schematic diagram of a reference example . In FIG. 7, Q1 conceptually shows a series of hole processing process apparatuses described in the section of the prior art, and Rn conceptually shows a roll wound with an adhesive sheet. After a plurality of holes are formed in Q1, the pressure-sensitive adhesive sheet n wound around Rn is rolled and brought into contact with a substrate (not shown), and adhered to the substrate when the substrate and the pressure-sensitive adhesive sheet are separated again. The processing residue is adhered to the adhesive sheet and separated and removed from the substrate. The processing residue mainly adheres to the upper surface on the back side of the substrate, but if necessary, the adhesive sheet is brought into contact with both sides of the substrate to selectively remove the processing residue attached on the substrate.
[0056]
FIG. 8 shows a conceptual schematic diagram of different reference examples . As shown in FIG. 8, the inside of the punch P1 is made hollow, and means C1 and a compressed gas discharge port A1 are provided so that compressed gas such as an air gun can be ejected, and the compressed gas is blown from the discharge port A1, thereby processing. The residue F1 can be blown away and separated and removed from the substrate 1a.
[0057]
FIG. 9 shows a conceptual schematic diagram of still another reference example . In FIG. 9, C2 represents an air suction means, and A2 represents an air suction port. In this case, the processing residue F1 is suctioned and separated and removed from the air suction port A2. Since the film substrate is thin and flexible, it can be sucked from the air suction port A2 and discharged to the outside of the punch by the air suction force.
[0058]
FIG. 10 and FIG. 11 show conceptual schematic diagrams of different reference examples , and B1 and B2 in each figure show a movable bar-like member and a needle-like member, respectively. The processing residue F1 can be separated and removed by the rod-like member and the needle-like member as described above.
[0059]
【The invention's effect】
According to the present invention, as described above, in the manufacturing method of processing the connection hole and the current collecting hole of the SCAF type thin film solar cell by using a die composed of a punch and a die, the punch is formed at the outer diameter portion of the tip. shall have a circular blade, the die is abutted against a back surface of the substrate, and a cylindrical or hollow cylindrical die having a larger outer diameter than the outer diameter of at least the punch further includes a periphery of said punch A hollow cylindrical member having a small gap and concentrically contacting the surface of the substrate is provided concentrically with the punch axis, and the substrate is fixed by the hollow cylindrical member and the cylindrical or hollow cylindrical die to perform the processing. by performing, eliminating the cracking problem around the first electrode layer is dragged by the punch, it is possible to better hole machining accuracy.
[0060]
Further, the punch vicinity of the base plate from both sides of the substrate, locally can be fixed, without being influenced by wrinkles in the substrate, thereby improving the positional accuracy of the hole.
[Brief description of the drawings]
Figure 1 is an enlarged schematic view of the opening portion relating to different reference example of this enlarged schematic view of the opening portion according to a reference example of the invention Figure 2 the present invention Figure 3 opened relating to different reference example of this invention enlarged schematic view of the opening associated with the actual施例enlarged schematic view FIG. 4 the invention of the hole FIG. 5 is an enlarged schematic view of the opening portion according to different embodiments of the invention Figure 6 the invention the enlarged schematic view of the opening portion according to different embodiments [Figure 7] this conceptual schematic diagram of a different reference example of the invention [8] conceptual schematic diagram 9 different reference example of this invention this invention an example of a conceptual schematic diagram Figure 10 of different conceptual schematic diagram of reference example 11 conceptual schematic diagram FIG. 12 thin-film solar cell of a different reference example of this invention of this invention structure different reference example Fig. 13 is a perspective view showing a schematic configuration of a thin film solar cell. Fig. 14 is a conventional thin film solar cell. FIG. 15 is a schematic cross-sectional view of a conventional thin-film solar cell opening device. FIG. 16 is an enlarged schematic view of an opening portion of a conventional opening device. FIG. FIG. 18 is a plan view showing the arrangement of the connection holes and the connection holes.
1a: Substrate, A1: Compressed gas discharge port, A2: Air suction port, B1: Bar-shaped member, B2: Needle-shaped member, F1: Processing residue, G1: Intermediate protective plate, D2: Die, Do, Wo: Concave Groove, n: adhesive sheet, P1, P2: punch, Ps: stripper plate, W1: hollow cylindrical member, W2: cylindrical or hollow cylindrical die.

Claims (3)

A photoelectric conversion part formed by sequentially laminating a first electrode layer, a photoelectric conversion layer, and a transparent electrode layer (second electrode layer) as a lower electrode layer on the surface of a film substrate having electrical insulation, and formed on the back surface of the substrate A third electrode layer and a fourth electrode layer serving as connection electrode layers, wherein the photoelectric conversion portion and the connection electrode layer are separated from each other and separated into unit parts, and formed outside the transparent electrode layer formation region The adjacent unit photoelectric conversion portions separated from each other on the surface are electrically connected in series via the connection hole for electrical series connection and the current collection hole formed in the transparent electrode layer forming region. A method for manufacturing a thin-film solar cell, wherein the connection hole and the current collecting hole are processed using a die composed of a punch and a die, wherein the punch has a circular blade at a tip outer diameter portion thereof. And the die is the front Abut the rear surface of the substrate, and a cylindrical or hollow cylindrical die having a larger outer diameter than the outer diameter of at least the punch further includes a periphery and a small gap of the punch and the punch shaft and concentric A method of manufacturing a thin-film solar cell, comprising: providing a hollow cylindrical member that contacts the surface of the substrate; and fixing the substrate with the hollow cylindrical member and the cylindrical or hollow cylindrical die . 2. The manufacturing method according to claim 1 , wherein when the die is a cylindrical die, the die has a circular blade portion at a portion corresponding to the punch blade on the die when processing. A method for producing a thin-film solar cell, comprising a groove for preventing contact with the thin film solar cell. 2. The manufacturing method according to claim 1 , wherein when the die is a hollow cylindrical die, a second punch facing the punch is provided in the hollow cylindrical portion of the die, and the surface of the substrate is formed by two punches. A method for producing a thin-film solar cell, comprising processing from both sides of the back surface.

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