JP4332894B2 - Surface treatment apparatus and surface treatment method - Google Patents

Description

  The present invention provides a surface treatment for performing various surface treatments on an object to be processed by excited active species of a generated reactive gas by performing a plasma discharge between an applied electrode and an earth electrode facing the applied electrode. The present invention relates to an apparatus and a surface treatment method.

When performing film formation or processing on the surface of the object to be processed, a plasma surface treatment apparatus is used. An ordinary plasma surface treatment apparatus has a structure of a capacitively coupled parallel plate system, which is one of plasma generation systems, in which an application electrode and an earth electrode face each other. The ground electrode is a table on which the object to be processed is placed, and the ground electrode is an electrode facing the application electrode.
However, in such a type of plasma surface treatment apparatus, the treatment range of the object to be treated depends on the electrode shape, and is mainly used for the purpose of performing the surface treatment on the entire surface of the object to be treated. Therefore, it is unsuitable for partially surface-treating the surface of the object to be processed.
In view of this, surface treatment apparatuses have been proposed for surface treatment with a pattern shape on the surface of the object to be treated (for example, Patent Document 1 and Patent Document 2).

Japanese Patent Laid-Open No. 2001-7092 (pages 5 to 6, FIG. 2) JP 2003-36996 A (page 3 to page 4, FIG. 1)

However, in the processing apparatus disclosed in Patent Document 1, it is necessary to form electrodes in a desired pattern shape in advance. Therefore, depending on the type of object to be processed, the desired pattern shape changes, so it is necessary to prepare multiple types of electrodes according to the desired pattern shape, and replace the electrode with another electrode each time. There is a problem that there is.
In Patent Document 2, processing is performed to a desired pattern shape by switching a plurality of electrodes. However, since the parallel plate electrode on the application side and the parallel plate electrode on the ground side are completely parallel, the desired pattern shape is obtained. If it changes, it is necessary to prepare an electrode having a shape corresponding to the pattern shape, and it is necessary to replace the electrode with another electrode each time.

  Therefore, the present invention solves the above-mentioned problems and partially applies to the surface of the object to be processed according to a desired pattern shape for processing the surface of the object to be processed without changing the configuration of the apparatus. An object of the present invention is to provide a surface treatment apparatus and a surface treatment method capable of reliably performing a surface treatment.

The first invention is a surface treatment for performing a surface treatment on an object to be treated by an excited active species of a generated reactive gas by performing a plasma discharge between an applied electrode and an earth electrode facing the applied electrode. A first electrode having a plurality of first linear conductors arranged in parallel along a first direction, and arranged in parallel along a second direction intersecting the first direction; A second electrode having a plurality of second linear conductors selected, and at least one of the plurality of first linear conductors of the first electrode is selected. Selecting at least one of the second linear conductors of the plurality of second linear conductors of the second electrode, thereby selecting the selected first linear conductor and the selected first linear conductor. An electrode selection section for performing surface treatment of the object to be processed at the intersection position of the two linear conductors; For example, the first electrode is held on the first dielectric is the applied electrode, the second electrode, said a ground electrode is held by a second dielectric, wherein the first electrode, the first Embedded in and held in one dielectric, and the second electrode is embedded and held in a second dielectric, or the first electrode is bonded or directly formed on the surface of the first dielectric, The second electrode is bonded or directly formed on the surface of the second dielectric, the first electrode is bonded or directly formed on the surface of the first dielectric, and the second electrode is formed on the second dielectric. A partition which is bonded or directly formed on the surface of the dielectric, and partitions the plasma discharge region between the first electrode and the second electrode between the first electrode and the second electrode. And the first electrode having the first electrode One of the first dielectric and the second dielectric having the second electrode is formed smaller than the other, and has an electrode moving portion that moves and positions the one dielectric and the partition together. This is a surface treatment device.

According to a second aspect of the present invention, there is provided a surface treatment for performing a surface treatment on an object to be processed by an excited active species of a generated reactive gas by performing a plasma discharge between an applied electrode and an earth electrode facing the applied electrode. A first electrode having a plurality of first linear conductors arranged in parallel along a first direction, and arranged in parallel along a second direction intersecting the first direction. An object selection step for disposing the object to be processed between the second electrode having the plurality of second linear conductors, and an electrode selection unit including the plurality of the first electrodes. At least one of the first linear conductors is selected, and at least one of the plurality of second linear conductors of the second electrode is selected. The selected first linear conductor and the selected second linear conductor A surface treatment method including performing a surface treatment of the object to be processed at an intersection position, wherein the first electrode is the application electrode and is held by the first dielectric, and the second electrode is The ground electrode is held by a second dielectric, the first electrode is embedded and held in the first dielectric, and the second electrode is embedded and held in a second dielectric, Alternatively, the first electrode is bonded or directly formed on the surface of the first dielectric, the second electrode is bonded or directly formed on the surface of the second dielectric, and the first electrode is Bonded or directly formed on the surface of the first dielectric, and the second electrode is bonded or directly formed on the surface of the second dielectric, and between the first electrode and the second electrode, Between the first electrode and the second electrode; A partition for partitioning the plasma discharge region is disposed, and one of the first dielectric having the first electrode and the second dielectric having the second electrode is formed smaller than the other. In the surface treatment method, the one dielectric and the partition wall are both moved and positioned by the electrode moving part.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described with reference to the drawings.
First Embodiment FIG. 1 shows a first embodiment of the surface treatment apparatus of the present invention. FIG. 2 is a perspective view showing the surface treatment apparatus of FIG. 3 and 4 are perspective views showing an example in which surface treatment is performed using the surface treatment apparatus of FIGS. 1 and 2.

In this example, the surface treatment apparatus 10 shown in FIGS. 1 and 2 converts the excited active species of the reaction gas generated in the formed plasma discharge region under atmospheric pressure or a pressure near atmospheric pressure to the surface of the object 20 to be treated. This is an apparatus for performing a predetermined process on the surface 21 of the workpiece 20 by direct exposure to the substrate 21.
The workpiece 20 is also called a workpiece. In this example, the surface treatment apparatus 10 is also called an atmospheric pressure plasma surface treatment apparatus. A relatively low-cost surface treatment apparatus that does not require vacuum equipment can be obtained by utilizing the excited active species of the reaction gas chemically generated by the plasma discharge region under the atmospheric pressure or a pressure near the atmospheric pressure. .

The surface treatment apparatus 10 shown in FIGS. 1 and 2 can perform various surface treatments on the surface of the workpiece 20 at a high surface treatment rate.
The surface treatment apparatus 10 shown in FIG. 1 and FIG. 2 processes the surface 21 of the to-be-processed object 20 which is a flat member as an example. The object 20 is a glass substrate of a display device such as a liquid crystal display device. The workpiece 20 has a front surface 21 and a back surface 22 opposite to the front surface 21.
The surface treatment apparatus 10 generally includes an upper electrode 30, a lower electrode 31, an electrode selection unit 33, a high-frequency power source 34, electrode moving units 35 and 36, a gas supply unit 40, a gas recovery unit 41, an upper dielectric 50, and a lower part. A dielectric 51 and a control unit 100 are included.

First, the upper unit of the upper electrode 30 and the upper dielectric 50 will be described.
The upper electrode 30 corresponds to the first electrode. The upper dielectric 50 corresponds to a first dielectric.
The upper electrode 30 has a plurality of first linear conductors 60. As shown in FIGS. 1 and 2, each first linear conductor 60 is embedded in the groove 50 </ b> A of the upper dielectric 50 so as to be parallel with the same interval along the first direction X. Is provided. The upper electrode 30 is an application electrode.
In the example of FIG. 1, a part of each first linear conductor 60 is embedded so as to be exposed on the upper surface 50 </ b> B side of the upper dielectric 50. Thus, the first linear conductor 60 is securely held so as not to be displaced with respect to the upper dielectric 50. The upper dielectric 50 is a flat dielectric.

Next, the lower unit of the lower electrode 31 and the lower dielectric 51 will be described.
The lower electrode 31 has a plurality of second linear conductors 61. The second linear conductors 61 are arranged at the same interval so as to be parallel along the second direction Y. The second direction Y is a direction intersecting the first direction X, preferably a direction orthogonal in the examples of FIGS.
Each second linear conductor 61 is provided embedded in a groove 51 </ b> A of the lower dielectric 51. A portion of each second linear dielectric 61 is exposed on the lower surface 51 </ b> B side of the lower dielectric 51. As a result, each second linear conductor 61 is held with respect to the lower dielectric 51 so as not to be misaligned. The lower electrode 31 is a ground electrode.

The arrangement pitch of each of the plurality of first linear conductors 60 and the plurality of second linear conductors 61 can be arbitrarily set. The lower electrode 31 corresponds to a second electrode, and the lower dielectric 51 corresponds to a second dielectric.
As a material of the plurality of first linear conductors 60 and the plurality of second linear conductors 61, for example, low resistance conductors such as Cu, Al, Au, and Ag can be used. As the cross-sectional shapes of the first linear conductor 60 and the second linear conductor 61, various shapes such as a rectangular shape, a circular shape, or an elliptical shape can be adopted. The 1st linear conductor 60 and the 2nd linear conductor 61 can also be called a wire or a thin wire.

As materials for the upper dielectric (first dielectric) 50 and the lower dielectric (second dielectric) 51, for example, quartz, borosilicate glass, alumina ceramic, resin-based material, or the like can be used.
In the example of FIGS. 1 and 2, the first linear conductor 60 and the second linear conductor 61 are embedded in the upper dielectric 50 and the lower dielectric 51, respectively, and are to be processed 20 side. There is no direct exposure.
The back surface 22 of the workpiece 20 is detachably mounted on a mounting surface 51 </ b> C that is the upper surface of the lower dielectric 51.

Next, the electrode selection unit 33 shown in FIGS. 1 and 2 will be described.
The electrode selection unit 33 includes an upper electrode selection unit 70 and a lower electrode selection unit 71. The upper electrode selection unit 70 is also referred to as a first electrode selection unit, and is electrically connected between each first linear conductor 60 and the high frequency power supply 34. The lower electrode selector 71 is also referred to as a second electrode selector, and is electrically connected between the ground portion 73 and each second linear conductor 61.
The upper electrode selection unit 70 and the lower electrode selection unit 71 can employ a structural example as shown in FIG. The upper electrode selection unit 70 includes a plurality of switches 70 </ b> A, and each switch 70 </ b> A can turn on / off the electrical connection between the high frequency power supply 34 and each first linear conductor 60.
Similarly, the lower electrode selector 71 has a plurality of switches 71A. Each switch 71A can turn on / off the electrical connection between each second linear conductor 61 and the ground portion 73.

The control unit 100 commands selection of ON / OFF operation of an arbitrary switch 70A of the upper electrode selection unit 70 and selection of ON / OFF operation of an arbitrary switch 71A of the lower electrode selection unit 71.
In addition, the control unit 100 can control the high-frequency power applied to the first linear conductor 60 of the upper electrode 30 by controlling the operation of the high-frequency power supply 34.
By varying the applied high frequency power, the surface treatment range of the surface 21 of the workpiece 20 can be expanded or reduced.

Next, the electrode moving part 35 and the electrode moving part 36 shown in FIG. 1 will be described.
The electrode moving part 35 can position the upper dielectric 50 and the upper unit of the upper electrode 30 by arbitrarily moving along the first direction X, the second direction Y, and the third direction Z integrally. . Similarly, the electrode moving part 36 can arbitrarily position the lower dielectric 51 and the lower unit of the lower electrode 31 by integrally moving along the first direction X, the second direction Y and the third direction Z. It is.
Accordingly, the relative positional relationship between the upper unit of the upper dielectric 50 and the upper electrode 30 and the lower unit of the lower dielectric 51 and the lower electrode 31 can be arbitrarily set.
However, one of the electrode moving parts 35 and 36 may be provided, and the setting of the other electrode moving part may be omitted.

1 supplies a mixed gas of a carrier gas and a processing gas necessary for surface treatment by plasma discharge, an upper unit of an upper dielectric 50 and an upper electrode 30, and a lower portion of a lower dielectric 51 and a lower electrode 31. It supplies to the plasma discharge area | region S between units. The gas recovery unit 41 actively recovers the mixed gas supplied to the plasma discharge region S.
However, the gas recovery unit 41 may not be provided. The gas supply unit 40, the gas recovery unit 41, and the electrode moving units 35 and 36 operate according to commands from the control unit 100.

An example of the type of gas that can be supplied by the gas supply unit 40 will be described.
As the carrier gas supplied by the gas supply unit 40, helium, argon, or the like can be employed. The processing gas supplied by the gas supply unit 40 is, for example, oxygen or CF ₄ . These processing gases are added in several percent with respect to the carrier gas.

For example, by adding oxygen to the carrier gas, a lyophilic process, an ashing process, or a cleaning process (cleaning process) can be performed on the surface 21 of the target object 20 shown in FIG. Further, by adding CF ₄ to the carrier gas, a liquid repellent process or an etching process can be performed.

The surface treatment performed by the surface treatment apparatus 10 of the present invention is a concept including the above-described lyophilic treatment, lyophobic treatment, ashing treatment, etching treatment, cleaning treatment, film formation treatment, and the like.
The upper dielectric 50 and the lower dielectric 51 shown in FIG. 1 have a function of preventing an unnecessary plasma discharge (referred to as a streamer) that is abnormal in the plasma discharge region generated in the plasma discharge region S.

Next, a surface treatment method performed by using the surface treatment apparatus 10 of the present invention will be described with reference to FIGS. 3, 4, and 5.
3 and 4 show an example in which the surface treatment is performed on the desired pattern region P illustrated in FIG. 4 on the surface 21 of the workpiece 20.
FIG. 5 shows an example of the procedure of the surface treatment method. The procedure of this surface treatment method includes an object placement step ST1, a gas supply step ST2, a linear conductor selection step ST3, and a treatment step ST4.

  First, in the processing object placement step ST1, the back surface 22 of the processing object 20 is placed on the mounting surface 51C of the lower dielectric 51 shown in FIG. As a result, the surface 21 faces the lower surface 50 </ b> C of the upper dielectric 50. The distance between the upper electrode 30 of the upper dielectric 50 and the lower electrode 31 of the lower dielectric 51 can be set by operating the electrode moving portions 35 and 36 in accordance with the surface treatment performed on the surface 21.

  Next, in the gas supply step ST <b> 2 of FIG. 5, the gas supply unit 40 of FIG. 1 supplies a mixed gas into the plasma discharge region S between the upper dielectric 50 and the lower dielectric 51. For example, helium is used as a carrier gas of the mixed gas, and oxygen is used as a processing gas. For example, a lyophilic process, an ashing process, or a cleaning process is performed on the surface 21 of the workpiece 20.

Next, in the linear conductor selection step ST3 of FIG. 5, at least one first of the plurality of first linear conductors 60 of the upper electrode 30 shown in FIG. Selection of the linear conductor and selection of at least one second linear conductor of the plurality of second linear conductors 61 of the lower electrode 31 are performed.
In processing step ST4 of FIG. 5, FIGS. 3 and 4 show an example in which, for example, a lyophilic process is performed on a desired pattern region P on the surface 21 of the object 20 to be processed.
The desired pattern area P is a band-shaped area as shown by a broken line parallel to the first direction X as shown in FIG.

This desired pattern region P is formed as follows.
One switch 70A of the upper electrode selection unit 70 of FIG. 3 is turned on, and the other switch 70A is in an OFF operation state. Thereby, the high frequency power of the high frequency power supply 34 is supplied to one first linear conductor 60 (60R).

On the other hand, one switch 71A of the lower electrode selector 71 is turned on, and the other switches 71A are turned off.
As a result, one second linear conductor 61 (61R) is grounded. As a result, the reaction gas generated in the plasma discharge region S in the circular region P1 of the surface 21 corresponding to the intersection position of one first linear conductor 60R and one second linear conductor 61R. Are directly exposed. The region P1 of the surface 21 is subjected to, for example, lyophilic processing.

Next, as shown in FIG. 4, the next second linear conductor 61T is grounded with the high-frequency power supplied to the first linear conductor 60R as it is. That is, the switch 71A corresponding to the second linear conductor 61T is turned on, and the other switches 71A are turned off.
Thus, the lyophilic process is performed on the area P2 next to the area P1 shown in FIGS. This region P2 is a region corresponding to the intersection position of one first linear conductor 60R and one second linear conductor 61T.

In such a procedure, the control unit 100 shown in FIG. 1 sequentially gives a command to the lower electrode selection unit 71, whereby the switch 71A of the lower electrode selection unit 71 is sequentially switched from the OFF state to the ON state. For example, a lyophilic process can be performed on a desired strip-shaped pattern region P as shown in FIG.
That is, there is a great merit that predetermined processing can be performed reliably and easily only on a desired pattern region P which is a specific partial region on the surface, not on the entire surface 21 of the object 20.
The above is the processing step ST4 shown in FIG. Note that the gas supply step ST2 and the linear conductor selection step ST3 shown in FIG. 5 may be performed simultaneously or in reverse order.

Second Embodiment FIGS. 6 to 9 show a second embodiment of the surface treatment apparatus of the present invention.
FIG. 6 shows a second embodiment of the surface treatment apparatus of the present invention. Since the surface treatment apparatus 10 shown in FIG. 6 is basically the same as the structure of the surface treatment apparatus 10 shown in FIG. 1, the corresponding parts are denoted by the same reference numerals and the description thereof is used.

The surface treatment apparatus 10 shown in FIG. 6 is different from the surface treatment apparatus 10 in FIG. 1 in that the partition wall 150 is disposed in the plasma discharge region S between the upper dielectric 50 and the lower dielectric 51. . For example, the partition wall 150 is disposed between the lower surface 50 </ b> C of the upper dielectric 50 and the surface 21 of the workpiece 20. For example, the same material as the material of the upper dielectric 50 and the lower dielectric 51 can be used for the partition 150, but other materials may be used.
The partition 150 has a structure having a plurality of holes 151 as shown in FIG. The wall portion 152 of the partition wall 150 separates adjacent holes 151. As shown in FIG. 6, the wall portion 152 is disposed so as to be between the adjacent first linear conductors 60 and between the adjacent second linear conductors 61. That is, the arrangement pitch of the adjacent wall portions 152 is the same as the arrangement pitch of the adjacent first linear conductors 60 and the arrangement pitch of the adjacent second linear conductors 61.

The partition 150 shown in FIG. 6 shows an example that can be disposed over the entire surface 21 of the workpiece 20.
Each of the partition walls 150 shown in FIGS. 8 and 9 is smaller than the size of the surface 21 of the workpiece 20. The partition 150 shown in FIG. 8 has, for example, four holes 151. The partition 150 shown in FIG. 9 has one large hole 151.

Each hole 151 of the partition 150 in FIG. 8 is at a position corresponding to an intersection position E between two first linear conductors 60 and 60 and two adjacent second linear conductors 61 and 61, for example.
On the other hand, the hole 151 of the partition wall 150 in FIG. 9 includes, for example, three adjacent first linear conductors 60, 60, 60 and three adjacent second linear conductors 61, 61, 61. A total of nine intersection positions F.

Thus, in the example of FIG. 8, on the surface 21, plasma discharges are generated in a limited manner with respect to the regions corresponding to the four intersection positions E, respectively, and the regions corresponding to the four intersection positions E on the surface 21 are generated. For example, a predetermined lyophilic process can be performed.
In the example of FIG. 9, for example, lyophilic processing can be limitedly performed on regions corresponding to nine intersection positions F on the surface 21.
In any case, on the surface 21 of the object 20 to be processed, the use of the partition wall 150 has an advantage that a necessary surface treatment can be limitedly performed in an arbitrary shape on an arbitrary pattern region.

Third Embodiment FIG. 10 shows a third embodiment of the surface treatment apparatus of the present invention.
Since the surface treatment apparatus 10 shown in FIG. 10 has basically the same structure as the surface treatment apparatus 10 shown in FIG. 1, the corresponding portions are denoted by the same reference numerals and description thereof is used.
The surface treatment apparatus 10 shown in FIG. 10 is different from the surface treatment apparatus 10 shown in FIG. 1 in the material of the upper dielectric 50. As the material of the upper dielectric 50 in FIG. 10, a porous material is used.
As the porous material, for example, a ceramic material or a resin material can be selected according to the application. An example of the ceramic porous material is alumina. Examples of the resin-based porous material include polyfluoroethylene.

Since the upper dielectric 50 is made of a porous material, the gas supply unit 40 reliably and smoothly mixes the mixed gas between the upper dielectric 50 and the lower dielectric 51 through the entire surface of the upper dielectric 50. There is an advantage that it can be supplied. Accordingly, it is not necessary to separately provide a gas supply path, and the mixed gas can be uniformly supplied into the region S, and the accuracy of the surface treatment by plasma discharge can be improved.
By providing one or a plurality of gas recovery units 41 in the side portions of the upper dielectric 50 and the lower dielectric 51, the mixed gas can be reliably recovered.

Fourth Embodiment FIG. 11 shows a fourth embodiment of the surface treatment apparatus of the present invention.
The surface treatment apparatus 10 shown in FIG. 11 is different from the surface treatment apparatus 10 shown in FIG. 10 in that the partition wall 150 is disposed between the upper dielectric 50 and the lower dielectric 51. This partition 150 is the same as the partition 150 shown in FIG.

Since the other structure of the surface treatment apparatus 10 of FIG. 11 is the same as that of FIG. 10, the description will be used.
By adopting this structure, the gas supply unit 40 has an advantage that the mixed gas can be reliably supplied through the upper dielectric 50 into each hole 151 of the partition wall 150.
The partition 150 in FIG. 11 is provided over almost the entire surface 21 of the workpiece 20, but the size of the partition 150 is not limited to this and may be smaller.

Fifth Embodiment FIG. 12 shows a fifth embodiment of the surface treatment apparatus of the present invention.
In the surface treatment apparatus 10 shown in FIG. 12, the size of the upper dielectric 50 is smaller than that of the lower dielectric 51. For this reason, the number of the first linear conductors 60 formed in the upper dielectric 50 is smaller than the number of the second linear conductors 61 of the lower dielectric 51.
As shown in FIG. 12A, the first linear conductor 60 on the upper dielectric 50 can be moved and positioned along the first direction X and the second direction Y by the operation of the electrode moving unit 35. is there.

For example, in the state of FIG. 12A, the upper dielectric 50 is smaller than the lower dielectric 51 and the object to be processed 20, and the lower dielectric 51 is slightly larger in size than the object to be processed 20.
The upper dielectric 50 faces a part of the surface 21 of the workpiece 20. In this state, for example, the two first linear conductors 60R of the upper dielectric 50 are conducted to the high frequency power source. For example, the two second linear conductors 61R and 61G of the lower dielectric 51 are grounded.

As a result, as shown in FIG. 12 (A), the surface treatment is performed on the portions corresponding to the intersection positions of the two first linear conductors 60R and 60R and the two second linear conductors 61R and 61G. Regions P6, P7, and P8 are created.
Thereafter, as shown in FIG. 12B, the electrode moving unit 35 moves the upper dielectric 50 in the first direction X and the second direction Y, and the upper dielectric 50 is separated from the surface 21 of the object 20 to be processed. Is positioned in the area. Thereafter, for example, the two first linear conductors 60R and 60R are connected to a high-frequency power source and grounded to the two second linear conductors 61H and 61J, so that the intersections are located at the intersections. Corresponding regions P9 and P10 can be surface treated.

  In this way, the unit including the upper dielectric 50 and the first linear conductor 60 is moved and positioned with respect to the first direction X and the second direction Y by the electrode moving unit 35, whereby the workpiece 20 is processed. Therefore, it is possible to easily and reliably perform surface treatment selectively with an arbitrary pattern shape on different positions of the surface 21 of the surface.

Sixth Embodiment FIG. 13 shows a sixth embodiment of the surface treatment apparatus 10 of the present invention. In the example of FIG. 12, no partition is arranged between the upper dielectric 50 and the lower dielectric 51.
In contrast, in the example of FIG. 13, a partition 150 having a predetermined size is disposed between the upper dielectric 50 and the lower dielectric 51.

As shown in FIG. 13A, the size of the upper dielectric 50 is smaller than the size of the lower dielectric 51. The size of the partition 150 is further smaller than that of the upper dielectric 50.
For example, as shown in FIG. 13A, high frequency power is supplied to one first linear conductor 60R, and one second linear conductor 61 is grounded. Thus, the surface treatment can be performed only on the region P11 of the surface 21 surrounded by the partition 150 as shown in FIG. 13B at the intersection position of these linear conductors.

Next, as illustrated in FIG. 13B, the electrode moving unit 35 moves and positions the partition 150 along with the upper dielectric 50 along the first direction X and the second direction Y. In this state, for example, by connecting the two first linear conductors 60R, 60R on the upper dielectric 50 side to a high frequency power source and grounding the three second linear conductors 61H, 61I, 61J, Surface treatment can be performed on a relatively wide area P12 surrounded by the partition 150.
In this way, by moving the upper dielectric 50 and the partition wall 150 with respect to the lower dielectric 51 and the object to be processed 20 by the electrode moving part 35, an arbitrary region of the surface 21 of the object to be processed 20 can be obtained. The surface treatment can be formed in a predetermined pattern.

Seventh Embodiment FIG. 14 shows a seventh embodiment of the surface treatment apparatus of the present invention.
The surface treatment apparatus 10 shown in FIG. 14 has basically the same structure as the surface treatment apparatus 10 shown in FIG.
However, the arrangement positions of the second linear conductors 61 of the lower electrode 31 of the surface treatment apparatus 10 shown in FIG. 14 are different.

In the example of FIG. 1, a part of each second linear conductor 61 is embedded so as to be exposed on the lower surface 51 </ b> B side of the lower dielectric 51.
On the other hand, in the example of FIG. 14, a part of each second linear conductor 61 is embedded so as to be exposed on the mounting surface 51 </ b> C side that is the upper surface of the lower dielectric 51.

The example shown in FIG. 14 is an example in which at least one dielectric is disposed between each first linear conductor 60 of the upper electrode 30 and the second linear conductor 61 of the lower electrode 31. The at least one dielectric refers to the upper dielectric 50. That is, each first linear conductor 60 of the upper electrode 30 is blocked from the plasma discharge region S by the upper dielectric 50.
On the other hand, at least a part of the second linear conductor 61 is exposed to the plasma discharge region S. Thus, one upper dielectric 50 is disposed between the upper electrode 30 and the lower electrode 31.

Eighth Embodiment FIG. 15 shows an eighth embodiment of the surface treatment apparatus of the present invention.
The surface treatment apparatus 10 in FIG. 15 differs from the surface treatment apparatus 10 in FIG. 1 in that the object to be processed 20 is moved along the first direction X and the second direction Y by the object movement unit 200. It is a point that can be positioned.
By doing in this way, the to-be-processed object 20 can be positioned reliably in the appropriate position of the upper electrode 30 and the lower electrode 31.

Ninth Embodiment FIG. 16 shows a ninth embodiment of the surface treatment apparatus of the present invention.
The surface treatment apparatus 10 shown in FIG. 16 is different from the surface treatment apparatus 10 shown in FIG. 1 in the following points.
Each first linear conductor 60 of the upper electrode (first electrode) 30 of the upper dielectric 50 is connected to the ground portion 73 via the upper electrode selector 70. For this reason, the upper electrode 30 is a ground electrode. On the other hand, each second linear conductor 61 of the lower electrode (second electrode) 31 of the lower dielectric 51 is connected to the high-frequency power source 34 via the lower electrode selector 71. For this reason, the lower electrode 31 is an application electrode.
Such a structure in which the ground electrode and the application electrode are turned upside down can be applied to the second to eighth embodiments.

Of course, the above-described embodiments of the surface treatment apparatus of the present invention can be used in combination with other embodiments. For example, in the seventh embodiment shown in FIG. 14 and the eighth embodiment shown in FIG. 15, it is of course possible to arrange the partition 150 as shown in FIG.
In the present invention, the electrode selection unit causes the surface treatment of the object to be processed at the intersection position of the selected first linear conductor and the selected second linear conductor.
The first electrode is securely held by the first dielectric, and the second electrode is securely held by the second dielectric.
The first electrode can be easily formed on the surface of the first dielectric, and the second electrode can also be easily formed on the surface of the second dielectric.

The reaction gas and the carrier gas are reliably and between the first dielectric, the first electrode unit, the second dielectric, and the second electrode unit throughout the first dielectric made of the porous material. Easy to install.
As a result, a partition is disposed between the first electrode and the second electrode at a position corresponding to a desired region on the surface of the object to be processed, thereby forming a plasma discharge region in the desired region within the partition. Can do.

The surface treatment apparatus of the present invention can partially perform plasma surface treatment on the surface of an object to be processed (also referred to as an object to be processed). When performing such partial plasma surface treatment, the upper electrode is selected to supply high-frequency power to the first linear conductor without changing the apparatus configuration of the surface treatment apparatus, and the second electrode of the lower electrode is selected. By selecting the grounding to the linear conductor, various surface treatments can be performed on the surface of the object to be processed according to a desired pattern shape.
Therefore, it becomes unnecessary to previously prepare a plurality of electrodes having a plurality of different pattern shapes as in the prior art, and it is not necessary to replace such electrodes, thereby eliminating the man-hours for replacing the electrodes.

In the surface treatment apparatus of the present invention, an example in which each first linear conductor of the upper electrode is embedded in the groove of the upper dielectric 50 is shown as an example in which the upper dielectric 50 is provided. Similarly, the second linear conductor 61 is also embedded in the groove of the lower dielectric 51.
However, the present invention is not limited to this, and the first linear conductor 60 of the upper electrode 30 may be formed by adhering to the surface of the upper dielectric 50 or may be directly formed on the surface by another method. Similarly, the second linear conductor of the lower electrode may be directly adhered to or formed directly on the surface of the lower dielectric 51.

  As an example in which the first linear conductor and the second linear conductor are directly formed on the corresponding dielectrics, for example, the first linear conductor and the second linear conductor are formed by sputtering thin film, plating, vapor deposition, for example. It can be directly formed on a corresponding dielectric by a method such as Further, the first linear conductor and the second linear conductor may be directly formed by forming a fine pattern by photolithography, etching or the like on the corresponding dielectric.

The upper electrode selection unit 70 shown in FIG. 1 selects at least one first linear conductor among the plurality of first linear conductors 60, or the lower electrode selection unit 71 includes a plurality of second linear conductors. The selection of at least one second linear conductor 61 out of 61 can be performed by programming by software in the control unit 100 or by a mechanical control method.
By selecting at least one of the first linear conductors 60 and selecting at least one of the second linear conductors 61, at the intersection of the selected upper linear conductors, The surface treatment can be selectively performed on the surface 21 partially or locally.

It is sufficient that at least one dielectric is disposed between the upper electrode 30 and the lower electrode 31. Therefore, it is sufficient that the dielectric is disposed on both or one of the upper electrode 30 and the lower electrode 31.
As an example, a structure in which the upper dielectric 50 is provided on the upper electrode 30 side and no dielectric is provided on the lower electrode 31 side can be employed.
On the other hand, when the dielectric is not disposed on the upper electrode 30 side, for example, the first linear conductors 60 of the upper electrode 30 are arranged such that the guitar string is stretched against the outer frame-shaped member. It can also be stretched. In any case, at least one dielectric prevents abnormal and unnecessary plasma discharge.

In the present invention, a surface treatment can be performed on a desired region of the object by performing plasma discharge after the object is positioned. However, the present invention is not limited thereto, and the surface treatment may be performed on a desired region of the object to be processed by plasma discharge while the object to be processed is moved.
In the present invention, each first linear conductor of the first electrode may be formed by being embedded in the first dielectric, and each second linear conductor of the second electrode may be formed on the surface of the second dielectric. . Conversely, in the present invention, each second linear conductor of the second electrode is formed by being embedded in the second dielectric, and each first linear conductor of the first electrode is formed on the surface of the first dielectric. It may be formed.

The surface treatment apparatus of the present invention can be applied not only to a plasma discharge system under atmospheric pressure or a pressure near atmospheric pressure, but also to vacuum plasma discharge.
By the way, the present invention is not limited to the above embodiment. The present invention can be applied to vacuum plasma surface treatment in addition to the atmospheric pressure plasma surface treatment described above.
In the embodiment described above, helium is used as the carrier gas of the mixed gas, and O ₂ is used as the processing gas.

For example, argon may be used as the carrier gas, and CF ₄ may be used as the processing gas. For example, by using He as the carrier gas and CF ₄ as the processing gas, the surface 21 of the object to be processed 20 can be subjected to water repellency treatment.
In addition, the surface treatment according to the present invention can be performed by appropriately selecting the type of carrier gas and treatment gas of the mixed gas, for example, processing such as etching, ashing, surface modification (lyophilic liquid) on the surface of the object to be treated. Treatment, liquid repellent treatment), cleaning treatment, film formation treatment, and the like.

  There are various types of objects to be processed, such as glass, ceramics, resin-based materials, and metals. Applications of the object to be processed according to the present invention include partial processing of glass for a display body (for example, a substrate for liquid crystal such as TFT (Thin Film Transistor), a substrate for organic EL (electroluminescence), a substrate for plasma display) This is a surface treatment of a wiring board portion of an electronic component or an electronic device.

In the embodiment of the present invention, various types of objects to be processed can be adopted depending on the purpose of processing.
The present invention is not limited to the above embodiment, and various modifications can be made without departing from the scope of the claims.
A part of each configuration of the above embodiment can be omitted, or can be arbitrarily combined so as to be different from the above.

The side view which shows 1st Embodiment of the surface treatment apparatus of this invention. The perspective view of the surface treatment apparatus of FIG. The perspective view which shows the surface treatment example by the surface treatment apparatus shown in FIG. FIG. 4 is a perspective view showing an example in which surface treatment is performed following FIG. 3. The flowchart which shows an example of the surface treatment method of this invention. The side view which shows 2nd Embodiment of the surface treatment apparatus of this invention. The perspective view which shows the example of a shape of the partition used for the surface treatment apparatus of FIG. The perspective view which shows the example which surface-treats using another partition. Furthermore, the perspective view which shows the example which performs a surface treatment using another partition. The side view which shows 3rd Embodiment of the surface treatment apparatus of this invention. The side view which shows 4th Embodiment of the surface treatment apparatus of this invention. The perspective view which shows the example which is performing the surface treatment by 5th Embodiment of the surface treatment apparatus of this invention. The perspective view which shows the example which is performing the surface treatment by 6th Embodiment of the surface treatment apparatus of this invention. The side view which shows 7th Embodiment of the surface treatment apparatus of this invention. The side view which shows 8th Embodiment of the surface treatment apparatus of this invention. The side view which shows 9th Embodiment of the surface treatment apparatus of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Surface treatment apparatus, 20 ... To-be-processed object, 21 ... Surface of to-be-processed object, 30 ... Upper electrode (1st electrode), 31 ... Lower electrode (2nd electrode), 33 ... Electrode selection unit, 35, 36 ... Electrode moving unit, 40 ... Gas supply unit, 50 ... Upper dielectric (first dielectric), 51 ... Lower dielectric (second dielectric) Dielectric), 60 ... first linear conductor, 61 ... second linear conductor, 70 ... upper electrode selection unit (first electrode selection unit), 71 ... lower electrode selection unit (Second electrode selection unit), 100 ... control unit, S ... plasma discharge region, X ... large one direction, Y ... second direction

Claims (2)

A surface treatment apparatus for performing a surface treatment on an object to be treated by excited active species of a reaction gas generated by performing a plasma discharge between an application electrode and an earth electrode facing the application electrode,
A first electrode having a plurality of first linear conductors arranged in parallel along a first direction;
A second electrode having a plurality of second linear conductors arranged in parallel along a second direction intersecting the first direction;
At least one of the plurality of first linear conductors of the plurality of first electrodes of the first electrode is selected, and at least one of the plurality of second linear conductors of the second electrode is selected. By selecting one of the second linear conductors, an electrode for performing surface treatment of the object to be processed at the intersection position of the selected first linear conductor and the selected second linear conductor With a selection unit,
The first electrode is the application electrode and held by the first dielectric; the second electrode is the ground electrode and held by the second dielectric;
The first electrode is embedded and held in the first dielectric, and the second electrode is embedded and held in the second dielectric, or the first electrode is a surface of the first dielectric The second electrode is adhered or directly formed on the surface of the second dielectric,
The first electrode is bonded or directly formed on the surface of the first dielectric, and the second electrode is bonded or directly formed on the surface of the second dielectric,
Between the first electrode and the second electrode, a partition for partitioning the plasma discharge region between the first electrode and the second electrode is disposed,
One of the first dielectric having the first electrode and the second dielectric having the second electrode is formed smaller than the other, and moves together with the one dielectric and the partition. A surface treatment apparatus having an electrode moving part for positioning.
A surface treatment method for surface-treating an object to be treated with excited active species of a reaction gas generated by performing plasma discharge between an application electrode and an earth electrode facing the application electrode,
A first electrode having a plurality of first linear conductors arranged in parallel along the first direction, and a plurality of electrodes arranged in parallel along a second direction intersecting the first direction A target object disposing step of disposing the target object between the second electrode having the second linear conductor;
The electrode selection unit selects at least one of the first linear conductors among the plurality of first linear conductors of the first electrode, and the plurality of second linear conductors of the second electrode. By selecting at least one of the second linear conductors, the surface of the object to be processed at the intersection of the selected first linear conductor and the selected second linear conductor A surface treatment method comprising a treatment step for performing treatment,
The first electrode is the application electrode and held by the first dielectric; the second electrode is the ground electrode and held by the second dielectric;
The first electrode is embedded and held in the first dielectric, and the second electrode is embedded and held in the second dielectric, or the first electrode is a surface of the first dielectric The second electrode is adhered or directly formed on the surface of the second dielectric,
The first electrode is bonded or directly formed on the surface of the first dielectric, and the second electrode is bonded or directly formed on the surface of the second dielectric,
Between the first electrode and the second electrode, a partition for partitioning the plasma discharge region between the first electrode and the second electrode is disposed,
One of the first dielectric having the first electrode and the second dielectric having the second electrode is formed smaller than the other,
The electrode moving part moves and positions the one dielectric and the partition together.
A surface treatment method characterized by the above.

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