JP4336249B2 - Semiconductor fine particle manufacturing method, manufacturing apparatus, and jewelry, fiber, fabric, clothing using semiconductor fine particles - Google Patents

Description

  The present invention relates to a method and apparatus for producing semiconductor fine particles such as germanium and silicon, and a jewelry, fiber, fabric, and clothing using the semiconductor fine particles.

Germanium, germanium-indium alloy, etc. are known to emit far-infrared rays and exhibit a health promotion effect and a therapeutic effect. Moreover, it is known that the alloy with the silver is applicable as an alloy for jewelry that exhibits the above-described effects (see, for example, Patent Document 1).
Japanese Patent No. 3025245 JRHeath et al., "Germanium quantum dots: Optical properties and synthesis", J. Chem. Phys. Vol.101, No.2, pp.1607-1615 (1994) AGRolo et al., "Structural properties of Ge nano-crystals embedded in SiO2 films from X-ray diffraction and Raman Spectroscopy", Thin Solid Films Vol.336 pp.58-62 (1998)

  In applying germanium having the far infrared effect described above to jewelry, etc., the use of germanium fine particles has been studied from the viewpoints of better far infrared effect expression, processability, application to various articles, etc. Yes.

Here, as a method for producing semiconductor fine particles such as germanium, for example, methods described in Non-Patent Documents 1 and 2 are known. For example, Document 1 describes germanium fine particles in a colloidal state in an inorganic solution phase. Further, Document 2 describes germanium fine particles contained in a SiO ₂ thin film. However, these methods have a problem that germanium fine particles cannot be suitably generated in a separated state.

  The present invention has been made to solve the above-described problems, and a manufacturing method, a manufacturing apparatus, and a jewelry, fiber, and fabric using the semiconductor fine particles capable of suitably generating semiconductor fine particles such as germanium. The purpose is to provide clothing.

In order to achieve such an object, a method for producing semiconductor fine particles according to the present invention includes (1) a discharge electrode member and a raw material body of germanium , which is a semiconductor material containing a P-type or N-type impurity that lowers electrical resistance. Using a chamber having an inert gas atmosphere inside and an inert gas introduction path provided below and an inert gas exhaust path provided above , Generated by applying a voltage between the raw material body and the discharge electrode member in the first step installed in an inert gas atmosphere so that a predetermined gap is provided between the discharge electrode member and the discharge electrode member. a second step of evaporating germanium particles are semiconductor particles from the material body by an arc discharge which is, (3) and evaporated from the material body, the gas flow path from the inert gas introduction passage into the inert gas exhaust path What germanium particles flowing upwards, characterized in that it comprises a third step of collecting by attaching the collection member which is installed at a predetermined position above there is inert gas exhaust path in the chamber.

The semiconductor fine particle manufacturing apparatus according to the present invention includes (a) a discharge electrode member and a P-type or N-type arranged to provide a predetermined gap between the discharge electrode member and the discharge electrode member. A raw material body of germanium , which is a semiconductor substance containing impurities , is contained, the inside is maintained in an inert gas atmosphere, an inert gas introduction path provided below, and an inert gas provided above A chamber having an exhaust path ; and (b) voltage applying means for applying a voltage between the raw material body and the discharge electrode member, and evaporating germanium fine particles, which are semiconductor fine particles , from the raw material body by the generated arc discharge; c) which is provided at a predetermined position above there is inert gas exhaust path in the chamber, it evaporates from the material body, upwardly along the gas flow path from the inert gas introduction passage into the inert gas exhaust path Characterized in that it comprises a collecting member for collecting by depositing germanium particles flowing.

  In the semiconductor fine particle manufacturing method and manufacturing apparatus described above, a predetermined voltage is applied to the gap between the semiconductor raw material body and the discharge electrode member. Then, semiconductor fine particles are generated by generating arc discharge and hitting the raw material body with ions to dissociate and evaporate the semiconductor material. As a result, it is possible to generate sufficiently fine semiconductor fine particles in a highly efficient and favorable state. In addition, semiconductor fine particles are guided and collected in the exhaust direction of the inert gas using a gas flow path formed by introducing and exhausting the inert gas in the chamber. Thereby, the semiconductor fine particles produced | generated with the raw material body can be collected efficiently. Note that the inert gas includes a rare gas such as argon and a nitrogen gas.

  Here, in the third step, the manufacturing method collects the semiconductor fine particles by adhering to the collecting member installed at a predetermined position in the exhaust gas exhaust direction, and the semiconductor fine particles adhering to the collecting member with alcohol. It is preferable to provide a fourth step of melting and separating from the collecting member. Further, in the manufacturing apparatus, it is preferable that the collecting means is a collecting member that is installed in a predetermined position in the exhaust gas exhaust direction in the chamber and collects semiconductor particles by adhering. As a result, the semiconductor fine particles can be efficiently collected with a simple configuration. Alternatively, a method of collecting the adhering semiconductor fine particles as a brush or a brush may be used.

  Moreover, it is preferable to set the pressure of the inert gas atmosphere in the chamber to a pressure within the range of 0.01 to 1 atm during the production of the semiconductor fine particles. Thereby, the manufacturing efficiency of semiconductor fine particles can be improved. Or you may set to the pressure outside the said range, for example, a pressure larger than 1 atmosphere.

  As for a specific semiconductor material to be manufactured for semiconductor fine particles, the semiconductor material is preferably germanium, and the impurity contained in the raw material body is preferably P-type indium. Alternatively, the semiconductor material is preferably silicon, and the impurity contained in the raw material body is preferably P-type boron.

  The jewelry according to the present invention is a jewelry having semiconductor fine particles produced by the above-described production method on the outer surface. Moreover, the fiber by this invention is a fiber containing the semiconductor fine particle manufactured by the above-mentioned manufacturing method. The fabric according to the present invention is a fabric such as a woven fabric, a knitted fabric or a non-woven fabric made of the above-described fibers. The garment according to the present invention is a garment formed by sewing the above-described fabric. According to such an accessory, fiber, fabric, and clothing, an accessory, fiber, fabric, and clothing having a health promoting effect and a therapeutic effect can be easily obtained.

  According to the method and apparatus for producing semiconductor fine particles of the present invention, a predetermined voltage is applied to the gap between the semiconductor raw material body and the discharge electrode member, and the semiconductor substance is evaporated by the generated arc discharge to evaporate the semiconductor fine particles. By generating, sufficiently fine semiconductor particles can be generated in a highly efficient and good state. In addition, according to the accessory, fiber, fabric, and clothing using the obtained semiconductor fine particles, a health promotion effect and a therapeutic effect can be sufficiently obtained.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of a semiconductor fine particle manufacturing method, a manufacturing apparatus, and a jewelry, fiber, fabric, and clothing using the semiconductor fine particles will be described in detail with reference to the drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted. Further, the dimensional ratios in the drawings do not necessarily match those described.

  FIG. 1 is a side sectional view schematically showing a configuration of an embodiment of a semiconductor fine particle manufacturing apparatus according to the present invention. The manufacturing apparatus includes a chamber 10, a voltage application unit 30, and a collection member 40. In the present embodiment, a case will be described in which germanium (Ge) is used as a semiconductor material to be manufactured for fine particles.

The chamber 10 has an inert gas introduction path 11 provided below and an inert gas exhaust path 12 provided above, and the inside thereof is maintained in an inert gas atmosphere 15. Argon (Ar) is preferably used as the inert gas. Alternatively, nitrogen (N ₂ ) gas, a rare gas other than Ar, or the like may be used as the inert gas.

  A container 25 having an open upper side is installed in the chamber 10. As the container 25, a carbon crucible is preferably used. Further, in this container 25, a germanium raw material body 20 which is a production target of fine particles is accommodated. This raw material body 20 is configured as a bulk material of Ge (In) containing indium (In) at a predetermined concentration as a P-type impurity for lowering its electric resistance, or as a solid raw material body such as powder. .

  An arc torch 35 is installed in the chamber 10 at a predetermined position with respect to the raw material body 20 in the container 25. The arc torch 35 is a discharge electrode member used when generating germanium fine particles. As shown in FIG. 1, the arc torch 35 is formed between a predetermined portion on the upper surface side of the Ge (In) raw material 20 and the arc torch 35. Are arranged so as to provide a predetermined gap. In such a configuration, a gap region between the raw material 20 and the arc torch 35 becomes an arc discharge region 21 when germanium fine particles are generated.

  A power source 31 is provided as a power source for applying voltage to the container 25, the Ge (In) raw material body 20, and the arc torch 35. The container 25 containing the raw material body 20 is connected to the negative electrode of the power source 31 via the wiring 32. Further, the arc torch 35 is connected to the positive electrode of the power source 31 through the wiring 33. The power supply 31 and the wirings 32 and 33 constitute a voltage application unit 30 for applying a voltage between the raw material body 20 and the arc torch 35.

  A collecting member 40 is installed in the chamber 10 in a predetermined position above the direction in which the inert gas is exhausted, that is, the inert gas exhaust path 12 when viewed from the raw material body 20 and the container 25. The collecting member 40 is a collecting means for collecting germanium fine particles generated in the Ge (In) raw material body 20. As the collecting member 40, for example, a glass plate or a stainless plate is used.

  A method for producing semiconductor fine particles using the production apparatus shown in FIG. 1 will be described. First, as shown in FIG. 1, the container 25 and the Ge (In) raw material body 20 are accommodated in the chamber 10 and installed in the inert gas atmosphere 15. At this time, the raw material body 20 is arrange | positioned so that the gap of predetermined distance may be provided between the arc torches 35 (1st step). Then, a voltage from the power source 31 is applied between the raw material body 20 and the arc torch 35 via the wirings 32 and 33. The voltage applied here is, for example, about 30V.

  Specifically, a negative voltage is applied to the container 25 and the raw material body 20 by the negative electrode of the power supply 31. A positive voltage is applied to the arc torch 35 by the positive electrode of the power supply 31. At this time, arc discharge occurs between the raw material 20 and the arc torch 35 in the arc discharge region 21. Then, the positive ions generated by the arc discharge collide with the raw material body 20, whereby germanium is dissociated and evaporated. The evaporated germanium becomes germanium fine particles (second step).

  The germanium fine particles evaporated from the Ge (In) raw material body 20 in the arc discharge region 21 flow upward along the gas flow path from the inert gas introduction path 11 to the exhaust path 12. Then, the germanium fine particles that have reached the collection member 40 arranged in the vicinity of the inert gas exhaust passage 12 are collected by adhering to the lower surface of the collection member 40 as shown by reference numeral 45 in FIG. 3 steps). In addition, after fine particle production | generation, if necessary, the operation | work which isolate | separates germanium fine particles from the collection member 40 is performed. In this case, preferably, a method is used in which the germanium fine particles 45 attached to the collecting member 40 are separated from the collecting member 40 by dissolving them with alcohol (fourth step). Alternatively, a method may be used in which the attached germanium fine particles 45 are collected as brushes or brushes.

  The effects of the semiconductor fine particle manufacturing method and manufacturing apparatus according to the present embodiment will be described.

  In the germanium fine particle production apparatus and the production method using the same shown in FIG. 1, a predetermined voltage is applied to the gap between the germanium raw material 20 and the arc torch 35 that is a discharge electrode member. In the gap region 21, arc discharge is generated and germanium particles are generated by dissociating and evaporating germanium by hitting the upper surface of the raw material body 20 with ions. According to such a method, it is possible to generate sufficiently fine germanium fine particles in a highly efficient and favorable state. Specifically, in the method described above, for example, germanium fine particles of about 5 g to 10 g per hour can be produced. The size of the generated germanium fine particles is, for example, 200 nm or less.

  Further, by using a gas flow path formed by introducing and exhausting an inert gas through the introduction path 11 and the exhaust path 12 in the chamber 10, the generated germanium fine particles are guided in the inert gas exhaust direction. The fine particles 45 are collected by the collecting member 40. Thereby, the germanium fine particles produced | generated with the raw material body 20 can be collected efficiently.

  In the above-described method, the resistance between the raw material body 20 and the arc torch 35 is lowered by arc discharge, and a direct current is applied to the raw material body 20. At this time, current flows through the raw material body 20 to increase the temperature, and the resistance of the raw material body 20 itself decreases. As a result, the amount of germanium evaporated from the raw material body 20 by arc discharge, that is, the amount of germanium fine particles generated, is increased, and germanium fine particles can be produced with high efficiency.

  Here, in the germanium raw material body 20 for generating fine particles, indium is contained as a P-type impurity. As such a P-type impurity, it is only necessary that the electrical resistance of the raw material body 20 can be lowered to some extent. For example, aluminum (Al), boron (B), or the like can be used in addition to indium (In). . Moreover, it is preferable to set the addition density | concentration to the density | concentration in the range of 0.01%-10%, for example. In general, a P-type or N-type impurity that lowers the electrical resistance may be used as the impurity. However, in view of characteristics such as far-infrared effect in the generated germanium fine particles, it is preferable to use a P-type impurity, and it is more preferable to use indium as the P-type impurity.

  In the manufacturing apparatus described above, the arc torch 35 is used as a discharge electrode member for applying a voltage to the Ge (In) raw material body 20. According to such a structure, generation | occurrence | production of the arc discharge between a raw material body and an electrode member, and the production | generation of germanium microparticles by it can be implement | achieved suitably. However, as such a discharge electrode member, various configurations other than the configuration shown in FIG. 1 may be used. Various containers 25 for holding the raw material body 20 may be used according to the state and amount of the raw material body. In the case of the configuration shown in FIG. 1, for example, a cerium-containing tungsten electrode or a thorium-containing tungsten electrode can be used as the arc torch 35.

  Various collecting means other than the collecting member 40 shown in FIG. 1 may be used as collecting means for collecting germanium fine particles evaporated from the raw material body 20 in the arc discharge region 21. Moreover, when installing a collection member in the exhaust direction of an inert gas, as a specific collection member, the plate-shaped member which consists of glass, stainless steel, a stainless mesh, glass wool etc. are used suitably, for example.

  Moreover, it is preferable to set the pressure of the inert gas atmosphere 15 such as an Ar gas atmosphere in the chamber 10 in which germanium fine particles are manufactured to a pressure within a range of 0.01 atmospheric pressure to 1 atmospheric pressure. Further, it is more preferable to set the pressure within the range of 0.1 atmospheric pressure to 0.6 atmospheric pressure. Thereby, the production and collection of germanium fine particles in the inert gas atmosphere 15 can be suitably realized, and the production efficiency of the fine particles can be improved. Or you may set to the pressure outside the said range. For example, in the method described above, germanium fine particles can be generated and collected even at a pressure higher than 1 atmosphere.

FIG. 2 is a graph showing the results of Raman spectroscopic analysis of germanium fine particles produced by the production method described above. In this graph, the horizontal axis represents the Raman shift wavenumber (cm ⁻¹ ), and the vertical axis represents the obtained Raman scattering intensity. When the Raman spectroscopic analysis is performed on the germanium fine particles, it is known that the peak in the vicinity of the wave number of 300 cm ⁻¹ draws a tail on the low wave number side due to the phonon ω-k dispersion relation (for example, non-patent document). 1 of FIG. 2 and FIG. 4 of Non-Patent Document 2). On the other hand, in FIG. 2, it can be seen that there is a tail on the low wave number side in the peak near the wave number of 300 cm ⁻¹ . This indicates the formation of germanium fine particles.

  3 to 5 are graphs showing the results of X-ray diffraction measurement, respectively. In these graphs, the horizontal axis represents the diffraction angle 2θ (deg.), And the vertical axis represents the obtained X-ray diffraction intensity. 3 is an X-ray diffraction pattern when the germanium fine particles of the stainless steel plate used as the collecting member 40 are not evaporated, and the graph of FIG. 4 is an X-ray diffraction pattern of the germanium fine particles evaporated on the stainless steel plate. The graph of FIG. 5 shows the X-ray diffraction pattern of pure germanium, respectively.

  In the diffraction pattern of pure germanium shown in FIG. 5, a peak of Ge (111) at 2θ = 27.3 deg. Appears (see, for example, FIG. 1 of Non-Patent Document 1). On the other hand, when the diffraction pattern shown in FIG. 3 for the stainless steel plate before vapor deposition of the germanium fine particles is compared with the diffraction pattern shown in FIG. 4 after vapor deposition, in the diffraction pattern of FIG. Although the diffraction intensity distribution appears in the vicinity of 3 deg., It can be seen that the intensity distribution is widened. This is considered to be caused by the fact that the generated germanium fine particles are not uniform in size. In addition, peaks considered to be Ge (220) and (422) appear at 2θ = 45 deg. And 83 deg., Respectively. These peaks are considered to be clear peaks because d is short. In addition, the four peaks having high intensity appearing in FIG. 4 are considered to be peaks due to stainless steel.

  The germanium fine particles produced by the production method and production apparatus described above can be suitably applied to jewelry, fibers, fabrics, clothing, and the like. That is, germanium is known to exhibit far-infrared rays and exert health promotion effects and therapeutic effects, and by using germanium fine particles, jewelry, fibers, fabrics, and the like having sufficient health promotion effects and therapeutic effects, and Clothing can be easily obtained.

  In particular, since the germanium fine particles produced by the above-described method are sufficiently fine and obtained in a good state, viewpoints such as better far-infrared effect expression, processability, and application to various articles It is extremely effective.

  In the above configuration, since the germanium raw material 20 used for the production of fine particles contains indium, the produced germanium fine particles may also contain indium. The germanium fine particles contain germanium microcrystals. When a small amount of indium is added, the germanium fine particles exhibit properties of a P-type semiconductor. Here, the far-infrared effect of germanium is remarkably exhibited in the P-type as compared with the N-type or intrinsic semiconductor. Therefore, the far-infrared effect obtained can be enhanced by adding a small amount of P-type impurities such as indium to the germanium fine particles. Note that an N-type impurity may be added as the impurity.

  FIG. 6 is a perspective view showing a configuration of a bracelet that is an example of an accessory using germanium fine particles. The bracelet 60 according to the present embodiment is an accessory worn on the arm, and a germanium fine particle film 62 coated with germanium fine particles is formed inside an annular ring 61 made of plastic. In such a configuration, when the bracelet 60 is worn on a human body, the germanium fine particle film 62 comes into contact with the skin. The germanium fine particle film 62 exhibits health enhancement and therapeutic effects due to the far infrared effect.

In addition to the bracelet, various accessories such as a necklace and a ring may be used as the accessory. Moreover, as a material of the jewelry, a metal such as silver, ceramics, plastic, or the like can be used. As for the application of the germanium fine particles to the jewelry, generally, it may be configured to have the germanium fine particles on the outer surface of the jewelry, and a specific method thereof is a method of directly applying on the outer surface of the jewelry. Not limited to this, various methods may be used such as a method of laser melting adhesion, a method of applying a dispersion of germanium fine particles in a SiO ₂ film, a method of applying a dispersion of germanium fine particles in an organic binder, and the like. .

  FIG. 7 is a schematic diagram showing a cross-sectional configuration of a synthetic fiber (organic chemical fiber) which is an example of a fiber using germanium fine particles. The synthetic fiber 70 according to the present embodiment is a polyester fiber having an outer diameter of about 5 μm, and a large number of germanium fine particles 71 are mixed therein. Most of these fine particles 71 are buried inside the fibers 70, but some of them are exposed to the outside from the surface of the fibers 70. In FIG. 7, fine particles partially exposed are shaded. The far-infrared effect described above is exhibited when the germanium fine particles 71 exposed to the outside come into contact with human skin.

  Further, in such a configuration, most of the germanium fine particles 71 partially exposed to the outside are buried in the polyester fiber 70, so that the fine particles 71 fall off the fiber 70 during the woven cloth process or washing. There are no defects.

  Organic fibers are preferably used as the fibers to which the germanium fine particles are applied. Such organic chemical fibers are either recycled fibers, semi-synthetic fibers, or synthetic fibers, except for inorganic chemical fibers such as glass fibers and carbon fibers. Examples of the regenerated fiber include rayon and cupra. Examples of the semi-synthetic fiber include acetate. Examples of the synthetic fiber include polyester, nylon, acrylic, vinylon, vinylidene, polyethylene, polypropylene, and polyurethane.

  In the production of fibers containing such germanium fine particles, when fiber materials that can be melt-spun (polyester, nylon, polypropylene, etc.) are used, resin pellets containing germanium fine particle powder are prepared and this is known. What is necessary is just to carry out melt spinning by the method. In the case of using a fiber raw material that cannot be melt-spun, for example, in the case of a regenerated fiber (rayon), a powder of germanium fine particles may be mixed into viscose to form a rayon fiber by a known method. Further, in the case of acrylic fiber or the like, germanium fine powder is mixed in an acrylic raw material (acrylic monomer such as acrylonitrile), and this is synthesized to be fiberized. This technique can also be applied to fiber materials that can be melt-spun.

  In addition, by using fabrics such as woven fabrics, knitted fabrics, and nonwoven fabrics made of fibers containing the germanium fine particles described above, or clothing made by sewing such fabrics, far-redness such as health promotion and therapeutic effects can be obtained. An external effect can be suitably obtained.

  By the way, the above-mentioned far-infrared effect of germanium, which brings about health promotion and treatment effects for treating and healing stiff shoulders, etc., is particularly preferably exhibited when microcrystals are formed in germanium fine particles. This is because germanium microcrystals are semi-crystalline but have semiconducting properties. The hypothesis that such a far-infrared effect appears is as follows.

  First, the action of electromagnetic waves such as far-infrared rays on a living body has an ionization action and a nonionization action, and a thermal action and a nonthermal action are known as the nonionization action. The ionization effect is mainly caused by short-wave electromagnetic waves (for example, radiation and ultraviolet rays) having a large energy. In the case of an electromagnetic wave having a long wavelength (for example, infrared rays), a thermal action and a non-thermal action are brought about as a non-ionizing action.

  When infrared rays are irradiated on a living body, the temperature rises in the living body due to absorbed energy, and a so-called thermal effect is exhibited. However, in the case of far-infrared rays having a wavelength of about 100 microns, in addition to the above-mentioned thermal action, the weak electromagnetic waves that are irradiated directly act on the living body, so-called non-thermal action is exhibited.

  By the way, Frohlich has proposed the following models since the 1960s. That is, there are many coherent vibration modes in the living body, but when energy is supplied, the vibrations are concentrated in a specific mode, and excitation with macro ordering can occur. It is clear that long-distance interactions can occur between them. Based on this model, it is suggested that there is a possibility that a non-thermal action may be brought about in the living body in a wavelength region from far infrared rays to microwaves.

  For example, mitochondria, which is an important biological component, synthesizes ATP from ADP coupled to the electron transport system, and it is expected that the non-thermal action is involved in the ATP generation process. By the way, Masanori Fuse et al., In “Infrared Technology” No. 12 (1997), experimentally confirms and examines the non-thermal action of far-infrared rays in the 100-micron wavelength band on mitochondria, which are intracellular organelles.

  On the other hand, germanium is an indirect transition type semiconductor, and its band gap energy is 0.67 eV (equivalent to the near infrared), but there are two types of holes (holes): heavy holes and light holes. It is known that when an electric field and a magnetic field are applied after cooling to a temperature, far infrared rays having a wavelength of the order of 100 microns related to these holes are emitted. For example, Susumu Komiyama prototyped a semiconductor laser using P-type germanium containing Group III impurities, and confirmed far-infrared laser oscillation at a wavelength of 80 to 120 microns while cooling with liquid helium ("Solid Physics" Vol. 31, No. 4 (1996)).

  Here, the radiation mechanism of far-infrared radiation estimated by the author of the above paper (Komiyama) is outlined. When P-type germanium (indirect transition type semiconductor) is at a very low temperature, a large amount of holes are degenerated to the gamma point (the top of the band), but when orthogonal electric and magnetic fields are applied, so-called cyclotron motion begins. At this time, a heavy hole has a kinetic energy equal to that of an optical phonon in a short time because the effective mass is about eight times as large as that of a light hole. Then, the optical phonon is immediately emitted to return to the heavy hole band again, but a part is scattered to the light hole band. In this way, light holes accumulate and an inversion distribution occurs for heavy holes. This light hole obtains kinetic energy by an electric field, and when it reaches a predetermined energy level, it directly makes an optical transition to the heavy hole band and emits far-infrared rays having a wavelength of 100 microns.

  The present inventor pays attention to these two proven facts, and particularly preferably, when the fine particles containing P-type germanium microcrystals are brought into contact with the human body, the P-type germanium having an absolute temperature of about 300 ° C. has a wavelength of about 100 microns. I thought that this would cause a non-thermal effect as well as a thermal effect on the human body.

  The far-infrared radiation mechanism presumed by the present inventor will be outlined. When the P-type germanium microcrystals are in a cryogenic state, a large number of holes are degenerated to the gamma point (the top of the band). Obtaining energy spreads the energy distribution and causes fluctuations. In other words, since the hole Fermi level is close to the valence band and there is energy of 25 meV at room temperature, it is easily excited to a level of 2.5 meV corresponding to far-infrared rays of a wavelength of 100 microns.

  In this way, a heavy hole is easily thermally excited from its band to a light hole band, and that hole emits far-infrared radiation and returns to its original heavy hole band. That is, far infrared rays having a wavelength of 100 microns are emitted. Therefore, by applying germanium fine particles containing such germanium microcrystals to jewelry, fibers, fabrics, clothing, and the like, health promotion effects and therapeutic effects by far infrared rays can be obtained. Further, since the germanium fine particles are sufficiently fine, the color and beauty of the groundwork such as accessories and fibers are not impaired.

  The semiconductor fine particle production method, production apparatus, and jewelry, fiber, fabric, and clothing using the semiconductor fine particles according to the present invention are not limited to the above-described embodiments, and various modifications are possible. For example, a semiconductor material other than germanium (Ge) may be used as a semiconductor material for which fine particles are manufactured. An example of such a semiconductor material is silicon (Si). In this case, it is preferable to use boron (B) as the P-type impurity. Alternatively, it is possible to produce fine particles targeting a substance other than germanium and silicon.

  INDUSTRIAL APPLICABILITY The present invention can be used as a production method, a production apparatus, and a jewelry, fiber, fabric, and clothing using the semiconductor fine particles, which can suitably generate semiconductor fine particles such as germanium.

It is side surface sectional drawing which shows roughly the structure of one Embodiment of the manufacturing apparatus of semiconductor fine particles. It is a graph which shows the Raman spectroscopic analysis result of germanium fine particles. It is a graph which shows the X-ray-diffraction pattern of a stainless steel plate in the state where germanium microparticles | fine-particles are not vapor-deposited. It is a graph which shows the X-ray-diffraction pattern of the germanium fine particles vapor-deposited on the stainless steel plate. It is a graph which shows the X-ray-diffraction pattern of pure germanium. It is a perspective view which shows the structure of the bracelet using germanium microparticles | fine-particles. It is a schematic diagram which shows the cross-sectional structure of the fiber using germanium microparticles | fine-particles.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Chamber, 11 ... Inert gas introduction path, 12 ... Inert gas exhaust path, 15 ... Inert gas atmosphere, 20 ... Ge (In) raw material body, 21 ... Arc discharge area | region, 25 ... Container, 30 ... Voltage application , 31 ... power source, 32, 33 ... wiring, 35 ... arc torch (discharge electrode member), 40 ... collecting member, 45 ... germanium fine particles, 60 ... bracelet, 61 ... annular ring, 62 ... germanium fine particle film, 70 ... Polyester fiber, 71 ... germanium fine particles.

Claims (11)

A discharge electrode member and a raw material body of germanium , which is a semiconductor material containing a P-type or N-type impurity that lowers electrical resistance, are accommodated, and the interior is maintained in an inert gas atmosphere, and is provided therebelow inert gas introduction passage, and with a chamber having an inert gas exhaust path provided above, the raw material, as a predetermined gap is provided between the discharge electrode member, the inert gas A first step to install in the atmosphere of
Applying a voltage between the raw material body and the discharge electrode member, and evaporating germanium fine particles as semiconductor fine particles from the raw material body by the generated arc discharge;
There is the inert gas exhaust path in the chamber for the germanium fine particles that evaporate from the raw material and flow upward along the gas flow path from the inert gas introduction path to the inert gas exhaust path. And a third step of collecting by adhering to a collecting member installed at a predetermined upper position, and a method for producing semiconductor fine particles. The process according to claim 1, wherein further comprising a fourth step of separating the germanium fine particles adhering to the collecting member from the collecting member is dissolved in alcohol. The manufacturing method according to claim 1 or 2 , wherein the pressure of the atmosphere of the inert gas in the chamber is set to a pressure within a range of 0.01 atmospheric pressure to 1 atmospheric pressure. The said impurity contained in the said raw material body is an indium, The manufacturing method as described in any one of Claims 1-3 characterized by the above-mentioned. Contains a discharge electrode member and a raw material body of germanium , which is a semiconductor material containing a P-type or N-type impurity that lowers electric resistance, and is disposed so as to provide a predetermined gap between the discharge electrode member and the discharge electrode member A chamber having an inert gas atmosphere inside , an inert gas introduction path provided below the chamber, and an inert gas exhaust path provided above ;
A voltage applying means for applying a voltage between the raw material body and the discharge electrode member, and evaporating germanium fine particles as semiconductor fine particles from the raw material body by the generated arc discharge;
Installed at a predetermined position above the inert gas exhaust path in the chamber, evaporates from the raw material , and moves upward along the gas flow path from the inert gas introduction path to the inert gas exhaust path And a collecting member that collects the germanium particles flowing to the surface by adhering them. The manufacturing apparatus according to claim 5 , wherein the pressure of the inert gas atmosphere in the chamber is set to a pressure within a range of 0.01 to 1 atmosphere. Manufacturing apparatus according to claim 5 or 6, wherein said impurities contained in the raw material body is indium. A jewelry comprising the germanium fine particles produced by the production method according to any one of claims 1 to 4 on an outer surface. The fiber characterized by including the germanium microparticles | fine-particles manufactured by the manufacturing method as described in any one of Claims 1-4 . Fabric for a material fiber of claim 9 wherein, knitted fabrics, non-woven cloth fabric. A garment formed by sewing the fabric according to claim 10 .

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