JP4477418B2 - Semiconductor fine particle manufacturing method, manufacturing apparatus, and jewelry, fiber, fabric, clothing using semiconductor fine particles - Google Patents

Description

  The present invention relates to a method and apparatus for producing semiconductor fine particles such as germanium and silicon, and a jewelry, fiber, fabric, and clothing using the semiconductor fine particles.

Germanium, germanium-indium alloy, etc. are known to emit far-infrared rays and exhibit a health promotion effect and a therapeutic effect. Moreover, it is known that the alloy with the silver is applicable as an alloy for jewelry that exhibits the above-described effects (see, for example, Patent Document 1).
Japanese Patent No. 3025245 JRHeath et al., "Germanium quantum dots: Optical properties and synthesis", J. Chem. Phys. Vol.101, No.2, pp.1607-1615 (1994) AGRolo et al., "Structural properties of Ge nano-crystals embedded in SiO2 films from X-ray diffraction and Raman Spectroscopy", Thin Solid Films Vol.336 pp.58-62 (1998)

  In applying germanium having the far infrared effect described above to jewelry, etc., the use of germanium fine particles has been studied from the viewpoints of better far infrared effect expression, processability, application to various articles, etc. Yes.

Here, as a method for producing semiconductor fine particles such as germanium, for example, methods described in Non-Patent Documents 1 and 2 are known. For example, Document 1 describes germanium fine particles in a colloidal state in an inorganic solution phase. Further, Document 2 describes germanium fine particles contained in a SiO ₂ thin film. However, these methods have a problem that germanium fine particles cannot be suitably generated in a separated state.

  The present invention has been made to solve the above-described problems, and a manufacturing method, a manufacturing apparatus, and a jewelry, fiber, and fabric using the semiconductor fine particles capable of suitably generating semiconductor fine particles such as germanium. The purpose is to provide clothing.

In order to achieve such an object, the semiconductor fine particle manufacturing method according to the present invention includes: (1) a P-type or N-type impurity that lowers the electric resistance is formed as a current path; A bulk material of germanium , which is a semiconductor material provided with a high resistance portion whose electrical resistance is increased by constricting the path , is accommodated, and the interior is maintained in an inert gas atmosphere, and an inert gas is provided below the bulk material. A first step of installing a bulk body in an inert gas atmosphere using a chamber having an active gas introduction path and an inert gas exhaust path provided above ; (2) a current in the current path of the bulk body; flushed, and a second step of evaporating germanium particles are semiconductor particles from a high resistance portion that is heated by Joule heat, evaporates from the high-resistance portion (3) bulk inert gas guide Germanium particles flowing along the gas flow path from the road to the inert gas exhaust path upward, collected by attaching the collection member which is installed at a predetermined position above there is inert gas exhaust path in the chamber And a third step.

Also, the semiconductor fine particle manufacturing apparatus according to the present invention is formed as a current path containing (a) a P-type or N-type impurity that lowers the electric resistance, and the electric path is constricted at a predetermined portion thereof. A bulk material of germanium , which is a semiconductor material provided with a high resistance portion with a high height , is accommodated, and the inside is maintained in an inert gas atmosphere , and an inert gas introduction path provided below and an upper portion A chamber having an inert gas exhaust path provided ; and (b) a current supply means for causing a current to flow in the current path of the bulk body and evaporating germanium fine particles as semiconductor fine particles from a high resistance portion heated by Joule heat. If, (c) which is provided at a predetermined position above there is inert gas exhaust path in the chamber, evaporates from the high resistance portion of the bulk material, the inert gas discharged from the inert gas introduction passage Along the gas flow path to be characterized in that it comprises a collecting member for collecting by depositing germanium particles flowing upwards.

  In the semiconductor fine particle manufacturing method and manufacturing apparatus described above, for example, a current is caused to flow through a semiconductor bulk body having a high resistance portion that has been made to have a high electrical resistance by a configuration in which a current path is narrowed. Semiconductor fine particles are generated by evaporation. As a result, it is possible to generate sufficiently fine semiconductor fine particles in a highly efficient and favorable state. Further, the semiconductor fine particles are guided and collected in the exhaust direction of the inert gas by using a gas flow path formed by introducing and exhausting the inert gas in the chamber. Thereby, the semiconductor fine particles produced | generated with the bulk body can be efficiently collected. Note that the inert gas includes a rare gas such as argon and a nitrogen gas.

  In general, a method for producing semiconductor fine particles includes a first step of placing a bulk body of a semiconductor material in an inert gas atmosphere, and heating the bulk body by a predetermined heating method to evaporate the semiconductor fine particles. A second step and a third step of collecting the semiconductor fine particles evaporated from the bulk body at a predetermined position in the exhaust gas exhaust direction may be provided. In addition, the semiconductor fine particle manufacturing apparatus accommodates a bulk body of a semiconductor material, a chamber in which the inside is maintained in an inert gas atmosphere, and the bulk body is heated by a predetermined heating method to evaporate the semiconductor fine particles. The heating means and the collecting means for collecting the semiconductor fine particles evaporated from the bulk body at a predetermined position in the exhaust gas exhaust direction may be provided. Even with such a configuration, it is possible to generate sufficiently fine semiconductor particles in a highly efficient and favorable state.

  Here, in the third step, the manufacturing method collects the semiconductor fine particles by adhering to the collecting member installed at a predetermined position in the exhaust gas exhaust direction, and the semiconductor fine particles adhering to the collecting member with alcohol. It is preferable to provide a fourth step of melting and separating from the collecting member. Further, in the manufacturing apparatus, it is preferable that the collecting means is a collecting member that is installed in a predetermined position in the exhaust gas exhaust direction in the chamber and collects semiconductor particles by adhering. As a result, the semiconductor fine particles can be efficiently collected with a simple configuration. Alternatively, a method of collecting the adhering semiconductor fine particles as a brush or a brush may be used.

  Moreover, it is preferable to set the pressure of the inert gas atmosphere in the chamber to a pressure within the range of 0.01 to 1 atm during the production of the semiconductor fine particles. Thereby, the manufacturing efficiency of semiconductor fine particles can be improved. Or you may set to the pressure outside the said range, for example, a pressure larger than 1 atmosphere.

  Regarding a specific semiconductor material that is a target for manufacturing semiconductor fine particles, the semiconductor material is preferably germanium, and the impurity contained in the bulk body is preferably P-type indium. Alternatively, the semiconductor material is preferably silicon, and the impurity contained in the bulk body is preferably P-type boron.

  The jewelry according to the present invention is a jewelry having semiconductor fine particles produced by the above-described production method on the outer surface. Moreover, the fiber by this invention is a fiber containing the semiconductor fine particle manufactured by the above-mentioned manufacturing method. The fabric according to the present invention is a fabric such as a woven fabric, a knitted fabric or a non-woven fabric made of the above-described fibers. The garment according to the present invention is a garment formed by sewing the above-described fabric. According to such an accessory, fiber, fabric, and clothing, an accessory, fiber, fabric, and clothing having a health promoting effect and a therapeutic effect can be easily obtained.

  According to the semiconductor fine particle manufacturing method and the manufacturing apparatus of the present invention, a current is passed through a semiconductor bulk body having a high resistance portion that has a high electrical resistance, and the semiconductor material is evaporated at the high resistance portion to generate semiconductor fine particles. As a result, sufficiently fine semiconductor particles can be generated in a highly efficient and good state. In addition, according to the accessory, fiber, fabric, and clothing using the obtained semiconductor fine particles, a health promotion effect and a therapeutic effect can be sufficiently obtained.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of a semiconductor fine particle manufacturing method, a manufacturing apparatus, and a jewelry, fiber, fabric, and clothing using the semiconductor fine particles will be described in detail with reference to the drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted. Further, the dimensional ratios in the drawings do not necessarily match those described.

  FIG. 1 is a side sectional view schematically showing a configuration of an embodiment of a semiconductor fine particle manufacturing apparatus according to the present invention. The manufacturing apparatus includes a chamber 10, a current supply unit 30, and a collection member 40. In the present embodiment, a case will be described in which germanium (Ge) is used as a semiconductor material to be manufactured for fine particles.

The chamber 10 has an inert gas introduction path 11 provided below and an inert gas exhaust path 12 provided above, and the inside thereof is maintained in an inert gas atmosphere 15. Argon (Ar) is preferably used as the inert gas. Alternatively, nitrogen (N ₂ ) gas, a rare gas other than Ar, or the like may be used as the inert gas.

  In the chamber 10, a germanium bulk body 20, which is a target for producing fine particles, is accommodated. The bulk body 20 is formed as a Ge (In) bulk current path containing indium (In) at a predetermined concentration as a P-type impurity for lowering its electric resistance. Further, in the configuration example shown in FIG. 1, the bulk body 20 includes two bulk body portions, that is, a first bulk body 21 that forms the right side portion in the drawing and a second bulk body 22 that forms the left side portion. Have.

  Of the first bulk body 21, the outer part of the bulk body 20 is a cylindrical part 21a having a constant diameter. Moreover, the inner part becomes the cone part 21b whose diameter becomes small toward an edge part. Similarly, an outer portion of the second bulk body 22 in the bulk body 20 is a cylindrical portion 22a having a constant diameter. In addition, the inner portion is a conical portion 22b whose diameter decreases toward the end. Then, by connecting the tip of the conical portion 21b of the bulk body 21 and the tip of the conical portion 22b of the bulk body 22, the entire Ge (In) bulk body 20 and the current path thereby formed are configured. . In such a configuration, the connection part of the bulk bodies 21 and 22 is a high resistance portion 23 whose electric resistance is increased by narrowing the current path in the bulk body 20.

  The bulk bodies 21 and 22 accommodated in the chamber 10 are supported by support members 33 and 34 fixed to the bottom surface of the chamber 10, respectively. These support members 33 and 34 are conductive members (electrode members) made of a conductive material. Between them, a power supply 31 for supplying current is connected via a wiring 32. These power supply 31, wiring 32, and electrode members 33 and 34 constitute a current supply unit 30 for flowing a current through the current path of the bulk body 20.

  A collection member 40 is installed in the chamber 10 at a predetermined position above the direction in which the inert gas is exhausted, that is, the inert gas exhaust path 12 when viewed from the bulk body 20. The collecting member 40 is a collecting means for collecting germanium fine particles generated in the Ge (In) bulk body 20. As the collecting member 40, for example, a glass plate or a stainless plate is used.

  A method for producing semiconductor fine particles using the production apparatus shown in FIG. 1 will be described. First, as shown in FIG. 1, a Ge (In) bulk body 20 composed of bulk bodies 21 and 22 and having a connecting portion serving as a high resistance portion 23 in the current path is accommodated in the chamber 10, It is installed in the active gas atmosphere 15 (first step). Then, the current supplied from the power source 31 is passed through the current path of the bulk body 20 via the support members 33 and 34 that support the bulk body 20.

  At this time, the high resistance part 23 in which the current path is narrowed in the bulk body 20 is heated to a high temperature by Joule heat, and germanium is evaporated from the high resistance part 23. The evaporated germanium becomes germanium fine particles (second step). For example, when a current of about 60 A to 200 A is supplied at 30 V to the bulk body 20 having a diameter of 5 mm to 20 mmφ at the cylindrical portions 21 a and 22 a, the temperature of the high resistance portion 23 is, for example, 100 ° C. higher than the melting point of germanium. The temperature is about 200 ° C. lower.

  The germanium fine particles evaporated from the high resistance portion 23 of the bulk body 20 flow upward along the gas flow path from the inert gas introduction path 11 to the exhaust path 12. Then, the germanium fine particles that have reached the collection member 40 arranged in the vicinity of the inert gas exhaust passage 12 are collected by adhering to the lower surface of the collection member 40 as shown by reference numeral 45 in FIG. 3 steps). In addition, after fine particle production | generation, if necessary, the operation | work which isolate | separates germanium fine particles from the collection member 40 is performed. In this case, preferably, a method is used in which the germanium fine particles 45 attached to the collecting member 40 are separated from the collecting member 40 by dissolving them with alcohol (fourth step). Alternatively, a method may be used in which the attached germanium fine particles 45 are collected as brushes or brushes.

  The effects of the semiconductor fine particle manufacturing method and manufacturing apparatus according to the present embodiment will be described.

  In the germanium fine particle manufacturing apparatus and the manufacturing method using the same shown in FIG. 1, a current is passed through the germanium bulk body 20 having the high resistance portion 23 having a high electrical resistance, and the high resistance portion becomes a high temperature. Germanium fine particles are generated by evaporating germanium at 23. According to such a method, it is possible to generate sufficiently fine germanium fine particles in a highly efficient and favorable state. Specifically, in the method described above, for example, germanium fine particles of about 5 g to 10 g per hour can be produced. The size of the generated germanium fine particles is, for example, 200 nm or less.

  Further, by using a gas flow path formed by introducing and exhausting an inert gas through the introduction path 11 and the exhaust path 12 in the chamber 10, the generated germanium fine particles are guided in the inert gas exhaust direction. The fine particles 45 are collected by the collecting member 40. Thereby, the germanium fine particles produced | generated with the bulk body 20 can be efficiently collected.

  Here, in the bulk body 20 of germanium which is a raw material body of fine particles, indium is contained as a P-type impurity because the bulk body 20 is used as a current path. As such a P-type impurity, it is only necessary to reduce the electrical resistance of the bulk body 20 to some extent. For example, in addition to indium (In), aluminum (Al), boron (B), or the like can be used. . Moreover, it is preferable to set the addition density | concentration to the density | concentration in the range of 0.01%-10%, for example. In general, a P-type or N-type impurity that lowers the electrical resistance may be used as the impurity. However, in view of characteristics such as far-infrared effect in the generated germanium fine particles, it is preferable to use a P-type impurity, and it is more preferable to use indium as the P-type impurity.

  In the manufacturing apparatus described above, in the Ge (In) bulk body 20, the high resistance portion 23 is formed by narrowing the current path by reducing the diameter of the bulk body 20. According to such a configuration, it is possible to suitably realize heating of the high resistance portion 23 by Joule heat and generation of germanium fine particles thereby. However, regarding the specific configuration of such a high resistance portion, various configurations other than the configuration shown in FIG. 1 may be used. Moreover, in the case of the structure shown in FIG. 1, it is preferable that the diameter in the cylindrical parts 21a and 22a of the bulk body 20 shall be 5 mm-20 mm (phi).

  Various collecting means other than the collecting member 40 shown in FIG. 1 may be used as collecting means for collecting germanium fine particles evaporated from the high resistance portion 23. Moreover, when installing a collection member in the exhaust direction of an inert gas, as a specific collection member, the plate-shaped member which consists of glass, stainless steel, a stainless mesh, glass wool etc. are used suitably, for example.

  Moreover, it is preferable to set the pressure of the inert gas atmosphere 15 such as an Ar gas atmosphere in the chamber 10 in which germanium fine particles are manufactured to a pressure within a range of 0.01 atmospheric pressure to 1 atmospheric pressure. Further, it is more preferable to set the pressure within the range of 0.1 atmospheric pressure to 0.6 atmospheric pressure. Thereby, the production and collection of germanium fine particles in the inert gas atmosphere 15 can be suitably realized, and the production efficiency of the fine particles can be improved. Or you may set to the pressure outside the said range. For example, in the method described above, germanium fine particles can be generated and collected even at a pressure higher than 1 atmosphere.

FIG. 2 is a graph showing the results of Raman spectroscopic analysis of germanium fine particles produced by the production method described above. In this graph, the horizontal axis represents the Raman shift wavenumber (cm ⁻¹ ), and the vertical axis represents the obtained Raman scattering intensity. When Raman spectroscopic analysis is performed on germanium fine particles, it is known that a peak in the vicinity of a wave number of 300 cm ⁻¹ has a tail on the low wave number side due to the ω-k dispersion relation of phonons (for example, non-patent document). 1 of FIG. 2 and FIG. 4 of Non-Patent Document 2). On the other hand, in FIG. 2, it can be seen that there is a tail on the low wave number side in the peak near the wave number of 300 cm ⁻¹ . This indicates the formation of germanium fine particles.

  The germanium fine particles produced by the production method and production apparatus described above can be suitably applied to jewelry, fibers, fabrics, clothing, and the like. That is, germanium is known to exhibit far-infrared rays and exert health promotion effects and therapeutic effects, and by using germanium fine particles, jewelry, fibers, fabrics, and the like having sufficient health promotion effects and therapeutic effects, and Clothing can be easily obtained.

  In particular, since the germanium fine particles produced by the above-described method are sufficiently fine and obtained in a good state, viewpoints such as better far-infrared effect expression, processability, and application to various articles It is extremely effective.

  Further, in the above configuration, since the germanium bulk body 20 used as a raw material for the production of fine particles contains indium, the produced germanium fine particles may also contain indium. The germanium fine particles contain germanium microcrystals. When a small amount of indium is added, the germanium fine particles exhibit properties of a P-type semiconductor. Here, the far-infrared effect of germanium is remarkably exhibited in the P-type as compared with the N-type or intrinsic semiconductor. Therefore, the far-infrared effect obtained can be enhanced by adding a small amount of P-type impurities such as indium to the germanium fine particles. Note that an N-type impurity may be added as the impurity.

  FIG. 3 is a perspective view showing a configuration of a bracelet as an example of a jewelry using germanium fine particles. The bracelet 60 according to the present embodiment is an accessory worn on the arm, and a germanium fine particle film 62 coated with germanium fine particles is formed inside an annular ring 61 made of plastic. In such a configuration, when the bracelet 60 is worn on a human body, the germanium fine particle film 62 comes into contact with the skin. The germanium fine particle film 62 exhibits health enhancement and therapeutic effects due to the far infrared effect.

In addition to the bracelet, various accessories such as a necklace and a ring may be used as the accessory. Moreover, as a material of the jewelry, a metal such as silver, ceramics, plastic, or the like can be used. In addition, as for the application of germanium fine particles to the jewelry, generally, it may be configured to have germanium fine particles on the outer surface of the jewelry, and as a specific method, a method of directly applying on the outer surface of the jewelry Not limited to this, various methods such as a laser melting method, a method in which germanium fine particles are dispersed in a SiO ₂ film, a method in which germanium fine particles are dispersed in an organic binder, and the like may be used. .

  FIG. 4 is a schematic diagram showing a cross-sectional configuration of a synthetic fiber (organic chemical fiber) that is an example of a fiber using germanium fine particles. The synthetic fiber 70 according to the present embodiment is a polyester fiber having an outer diameter of about 5 μm, and a large number of germanium fine particles 71 are mixed therein. Most of these fine particles 71 are buried inside the fibers 70, but some of them are exposed to the outside from the surface of the fibers 70. In FIG. 4, fine particles partially exposed are shaded. The far-infrared effect described above is exhibited when the germanium fine particles 71 exposed to the outside come into contact with human skin.

  Further, in such a configuration, most of the germanium fine particles 71 partially exposed to the outside are buried in the polyester fiber 70, so that the fine particles 71 fall off the fiber 70 during the woven cloth process or washing. There are no defects.

  Organic fibers are preferably used as the fibers to which the germanium fine particles are applied. Such organic chemical fibers are either recycled fibers, semi-synthetic fibers, or synthetic fibers, except for inorganic chemical fibers such as glass fibers and carbon fibers. Examples of the regenerated fiber include rayon and cupra. Examples of the semi-synthetic fiber include acetate. Examples of the synthetic fiber include polyester, nylon, acrylic, vinylon, vinylidene, polyethylene, polypropylene, and polyurethane.

  In the production of fibers containing such germanium fine particles, when fiber materials that can be melt-spun (polyester, nylon, polypropylene, etc.) are used, resin pellets containing germanium fine particle powder are prepared and this is known. What is necessary is just to carry out melt spinning by the method. In the case of using a fiber raw material that cannot be melt-spun, for example, in the case of a regenerated fiber (rayon), a powder of germanium fine particles may be mixed into viscose to form a rayon fiber by a known method. Further, in the case of acrylic fiber or the like, germanium fine particle powder is mixed in an acrylic raw material (acrylic monomer such as acrylonitrile), and this is synthesized to be fiberized. This technique can also be applied to fiber materials that can be melt-spun.

  In addition, by using fabrics such as woven fabrics, knitted fabrics, and nonwoven fabrics made of fibers containing the germanium fine particles described above, or clothing made by sewing such fabrics, far-redness such as health promotion and therapeutic effects can be obtained. An external effect can be suitably obtained.

  By the way, the above-mentioned far-infrared effect of germanium, which brings about health promotion and treatment effects for treating and healing stiff shoulders, etc., is particularly preferably exhibited when microcrystals are formed in germanium fine particles. This is because germanium microcrystals are semi-crystalline but have semiconducting properties. The hypothesis that such a far-infrared effect appears is as follows.

  First, the action of electromagnetic waves such as far-infrared rays on a living body has an ionization action and a nonionization action, and a thermal action and a nonthermal action are known as the nonionization action. The ionization effect is mainly caused by short-wave electromagnetic waves (for example, radiation and ultraviolet rays) having a large energy. In the case of an electromagnetic wave having a long wavelength (for example, infrared rays), a thermal action and a non-thermal action are brought about as a non-ionizing action.

  When infrared rays are irradiated on a living body, the temperature rises in the living body due to absorbed energy, and a so-called thermal effect is exhibited. However, in the case of far-infrared rays having a wavelength of about 100 microns, in addition to the above-mentioned thermal action, the weak electromagnetic waves that are irradiated directly act on the living body, so-called non-thermal action is exhibited.

  By the way, Frohlich has proposed the following models since the 1960s. That is, there are many coherent vibration modes in the living body, but when energy is supplied, the vibrations are concentrated in a specific mode, and excitation with macro order can occur. It is clear that long-distance interactions can occur between them. Based on this model, it is suggested that there is a possibility that a non-thermal action may be brought about in the living body in a wavelength region from far infrared rays to microwaves.

  For example, mitochondria, which is an important biological component, synthesizes ATP from ADP coupled to the electron transport system, and it is expected that the non-thermal action is involved in the ATP generation process. By the way, Masanori Fuse et al., In “Infrared Technology” No. 12 (1997), experimentally confirms and examines the non-thermal action of far-infrared rays in the 100-micron wavelength band on mitochondria, which are intracellular organelles.

  On the other hand, germanium is an indirect transition type semiconductor, and its band gap energy is 0.67 eV (equivalent to the near infrared), but there are two types of holes (holes): heavy holes and light holes. It is known that when an electric field and a magnetic field are applied after cooling to a temperature, far infrared rays having a wavelength of the order of 100 microns related to these holes are emitted. For example, Susumu Komiyama prototyped a semiconductor laser using P-type germanium containing Group III impurities, and confirmed far-infrared laser oscillation at a wavelength of 80 to 120 microns while cooling with liquid helium ("Solid Physics" Vol. 31, No. 4 (1996)).

  Here, the radiation mechanism of far-infrared radiation estimated by the author of the above paper (Komiyama) is outlined. When P-type germanium (indirect transition type semiconductor) is at a very low temperature, a large amount of holes are degenerated to the gamma point (the top of the band), but when orthogonal electric and magnetic fields are applied, so-called cyclotron motion begins. At this time, a heavy hole has a kinetic energy equal to that of an optical phonon in a short time because the effective mass is about eight times as large as that of a light hole. Then, the optical phonon is immediately emitted to return to the heavy hole band again, but a part is scattered to the light hole band. In this way, light holes accumulate and an inversion distribution occurs for heavy holes. This light hole obtains kinetic energy by an electric field, and when it reaches a predetermined energy level, it directly makes an optical transition to the heavy hole band and emits far-infrared rays having a wavelength of 100 microns.

  The present inventor pays attention to these two proven facts, and particularly preferably, when the fine particles containing P-type germanium microcrystals are brought into contact with the human body, the P-type germanium having an absolute temperature of about 300 ° C. has a wavelength of about 100 microns. I thought that this would cause a non-thermal effect as well as a thermal effect on the human body.

  The far-infrared radiation mechanism presumed by the present inventor will be outlined. When the P-type germanium microcrystals are in a cryogenic state, a large number of holes are degenerated to the gamma point (the top of the band). Obtaining energy spreads the energy distribution and causes fluctuations. In other words, since the hole Fermi level is close to the valence band and there is energy of 25 meV at room temperature, it is easily excited to a level of 2.5 meV corresponding to far-infrared rays of a wavelength of 100 microns.

  In this way, a heavy hole is easily thermally excited from its band to a light hole band, and that hole emits far-infrared radiation and returns to its original heavy hole band. That is, far infrared rays having a wavelength of 100 microns are emitted. Therefore, by applying germanium fine particles containing such germanium microcrystals to jewelry, fibers, fabrics, clothing, and the like, health promotion effects and therapeutic effects by far infrared rays can be obtained. In addition, since the germanium fine particles are sufficiently fine, the color and beauty of the groundwork such as accessories and fibers are not impaired.

  The semiconductor fine particle production method, production apparatus, and jewelry, fiber, fabric, and clothing using the semiconductor fine particles according to the present invention are not limited to the above-described embodiments, and various modifications are possible. For example, a semiconductor material other than germanium (Ge) may be used as a semiconductor material for which fine particles are manufactured. An example of such a semiconductor material is silicon (Si). In this case, it is preferable to use boron (B) as the P-type impurity. Alternatively, it is possible to produce fine particles targeting a substance other than germanium and silicon.

  In general, a method for producing semiconductor fine particles includes a first step of placing a bulk body of a semiconductor material in an inert gas atmosphere, and heating the bulk body by a predetermined heating method to evaporate the semiconductor fine particles. A second step and a third step of collecting the semiconductor fine particles evaporated from the bulk body at a predetermined position in the exhaust gas exhaust direction may be provided. In addition, the semiconductor fine particle manufacturing apparatus accommodates a bulk body of a semiconductor material, a chamber in which the inside is maintained in an inert gas atmosphere, and the bulk body is heated by a predetermined heating method to evaporate the semiconductor fine particles. The heating means and the collecting means for collecting the semiconductor fine particles evaporated from the bulk body at a predetermined position in the exhaust gas exhaust direction may be provided. Even with such a configuration, it is possible to generate sufficiently fine semiconductor particles in a highly efficient and favorable state. As the heating means for heating the bulk body, other heating methods such as induction heating may be used in addition to the above-described method using the current supply means using resistance heating. Moreover, as a setting method of the bulk body in this case, it is good also as a structure which accommodates a bulk body in containers, such as a carbon crucible, for example.

  INDUSTRIAL APPLICABILITY The present invention can be used as a production method, a production apparatus, and a jewelry, fiber, fabric, and clothing using the semiconductor fine particles, which can suitably generate semiconductor fine particles such as germanium.

It is side surface sectional drawing which shows roughly the structure of one Embodiment of the manufacturing apparatus of semiconductor fine particles. It is a graph which shows the Raman spectroscopic analysis result of germanium fine particles. It is a perspective view which shows the structure of the bracelet using germanium microparticles | fine-particles. It is a schematic diagram which shows the cross-sectional structure of the fiber using germanium microparticles | fine-particles.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Chamber, 11 ... Inert gas introduction path, 12 ... Inert gas exhaust path, 15 ... Inert gas atmosphere, 20 ... Ge (In) bulk body, 21 ... 1st bulk body, 22 ... 2nd bulk body, 21a, 22a ... cylindrical portion, 21b, 22b ... conical portion, 23 ... high resistance portion, 30 ... current supply portion, 31 ... power supply, 32 ... wiring, 33, 34 ... support member, 40 ... collecting member, 45 ... germanium fine particles , 60 ... bracelet, 61 ... ring, 62 ... germanium fine particle film, 70 ... polyester fiber, 71 ... germanium fine particle.

Claims (11)

A semiconductor material which is formed as a current path containing a P-type or N-type impurity that lowers the electrical resistance, and is provided with a high resistance portion whose electrical resistance is increased by constricting the current path at a predetermined portion thereof. Using a chamber containing a bulk body of germanium , the inside being maintained in an inert gas atmosphere, an inert gas introduction path provided below, and an inert gas exhaust path provided above, a first step of placing the bulk material, in an atmosphere of the inert gas,
A second step of causing a current to flow through the current path of the bulk body and evaporating germanium fine particles as semiconductor fine particles from the high resistance portion heated by Joule heat ;
The germanium fine particles that evaporate from the high resistance portion of the bulk body and flow upward along the gas flow path from the inert gas introduction path to the inert gas exhaust path are allowed to pass through the inert gas in the chamber. And a third step of collecting by adhering to a collecting member installed at a predetermined position above the gas exhaust path . The process according to claim 1 Symbol mounting, characterized in that it comprises a fourth step of separating the germanium fine particles adhering to the collecting member from the collecting member is dissolved in alcohol. The manufacturing method according to claim 1 or 2 , wherein the pressure of the atmosphere of the inert gas in the chamber is set to a pressure within a range of 0.01 atmospheric pressure to 1 atmospheric pressure. Method of any one of claims 1-3, characterized in that the impurity contained in the bulk material is indium. A semiconductor material which is formed as a current path containing a P-type or N-type impurity that lowers the electrical resistance, and is provided with a high resistance portion whose electrical resistance is increased by constricting the current path at a predetermined portion thereof. A chamber having a bulk body of germanium and having an inert gas atmosphere therein , an inert gas introduction path provided below the chamber, and an inert gas exhaust path provided above ;
A current supply means for causing a current to flow through the current path of the bulk body and evaporating germanium fine particles as semiconductor fine particles from the high resistance portion heated by Joule heat ;
Gas flow from the inert gas introduction path to the inert gas exhaust path is set in a predetermined position above the inert gas exhaust path in the chamber and evaporated from the high resistance portion of the bulk body. An apparatus for producing semiconductor fine particles, comprising: a collecting member that collects the germanium fine particles flowing upward along the path . The manufacturing apparatus according to claim 5 , wherein the pressure of the inert gas atmosphere in the chamber is set to a pressure within a range of 0.01 to 1 atmosphere. Manufacturing apparatus according to claim 5 or 6, wherein said impurity contained in the bulk material is indium. A jewelry comprising the germanium fine particles produced by the production method according to any one of claims 1 to 4 on an outer surface. The fiber characterized by including the germanium microparticles | fine-particles manufactured by the manufacturing method as described in any one of Claims 1-4 . Fabric for a material fiber of claim 9 wherein, knitted fabrics, non-woven cloth fabric. A garment formed by sewing the fabric according to claim 10 .

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