JP4415502B2

JP4415502B2 - Resistor and manufacturing method thereof

Info

Publication number: JP4415502B2
Application number: JP2001072243A
Authority: JP
Inventors: 俊樹松川; 章夫福岡; 正人橋本; 博之斉川; 努中西
Original assignee: Panasonic Corp; Matsushita Electric Industrial Co Ltd
Current assignee: Panasonic Corp; Panasonic Holdings Corp
Priority date: 2000-08-30
Filing date: 2001-03-14
Publication date: 2010-02-17
Anticipated expiration: 2021-03-14
Also published as: JP2002151303A

Description

【０００１】
【発明の属する技術分野】
本発明は抵抗器およびその製造方法に関するものであり、特に微細な抵抗器およびその製造方法に関するものである。
【０００２】
【従来の技術】
従来のこの種の抵抗器としては、特開平３−８０５０１号公報に開示された「側面電極を４層構造とした抵抗器」が知られている。
【０００３】
この抵抗器は、図２１に示すように、基板１の上面の両端部に位置して基板１の端面より内側に設けた一対の上面電極膜２を跨ぐように抵抗層３を設けるとともに、前記基板１の端面に一対の上面電極膜２と電気的に接続される一対のコ字型の側面電極４を設けている。そして前記側面電極４は、最下層に上面電極膜２と電気的に接続されるＮｉＣｒ薄膜、Ｔｉ薄膜またはＣｒ薄膜からなるコ字型の第１の金属薄膜５と、この第１の金属薄膜５に重畳する低抵抗のＣｕ薄膜からなる第２の金属薄膜６と、この第２の金属薄膜６に重畳するＮｉめっき膜からなる第１の金属めっき膜７と、さらにこの第１の金属めっき膜７に重畳するＰｂ−Ｓｎめっき膜またはＳｎめっき膜からなる第２の金属めっき膜８の４層構造となっていた。
【０００４】
【発明が解決しようとする課題】
しかしながら、上記した従来の抵抗器においては、側面電極４における第２の金属薄膜６を低抵抗のＣｕ薄膜で構成しているため、この抵抗器を湿度の高い雰囲気中に放置すると、第２の金属薄膜６であるＣｕ薄膜とその下層である第１の金属薄膜５との界面において、第１の金属薄膜５と第２の金属薄膜６とが固溶しづらいため、水分等がこの界面に吸着されると、第１の金属薄膜５から第２の金属薄膜６が剥離しやすくなるという課題を有していた。
【０００５】
本発明は上記従来の課題を解決するもので、側面電極を構成する第１の薄膜と第２の薄膜との間の密着力が向上し、高い信頼性を有する抵抗器およびその製造方法を提供することを目的とするものである。
【０００６】
【課題を解決するための手段】
上記目的を達成するために本発明は、以下の構成を有するものである。
【０００７】
本発明の請求項１に記載の発明は、基板と、この基板の一主面に形成した一対の上面電極と、この一対の上面電極と電気的に接続されるように設けた抵抗体と、少なくとも前記抵抗体を覆うように設けられた保護層と、前記基板の端縁に前記一対の上面電極と電気的に接続されるように設けられた略コ字型の一対の側面電極とを備え、前記側面電極を、基板の端縁側に位置し、かつ基板への付着性の良いＣｒ薄膜、Ｔｉ薄膜、Ｃｒ系合金薄膜、Ｔｉ系合金薄膜のいずれかからなる第１の薄膜と、この第１の薄膜と電気的に接続されるＣｕ系の合金薄膜からなる第２の薄膜と、少なくとも前記第２の薄膜を覆うニッケルめっきからなる第１のめっき膜と、少なくとも前記第１のめっき膜を覆う第２のめっき膜の複層構造により構成したもので、この構成によれば、基板の端縁に一対の上面電極と電気的に接続されるように設けられた略コ字型の一対の側面電極を、第１の薄膜と、第２の薄膜と、第１のめっき膜と、第２のめっき膜の複数構造により構成し、かつ第１の薄膜と電気的に接続される第２の薄膜をＣｕ系の合金薄膜により構成しているため、第１の薄膜と第２の薄膜との界面においては、Ｃｕ系の合金薄膜を構成する添加金属と第１の薄膜の構成金属とが全率固溶体を構成することになり、これにより、第１の薄膜と第２の薄膜との間の密着力が向上して信頼性を高めることができるという作用を有するものである。
【０００８】
請求項２に記載の発明は、特に、側面電極を構成する第２の薄膜を、ＣｕにＮｉを１．６重量％以上含有させたＣｕ−Ｎｉ合金薄膜で構成したもので、この構成によれば、第１の薄膜と第２の薄膜との界面において、Ｃｕ−Ｎｉ合金薄膜の第２の薄膜との間の密着力が向上して信頼性を高めることができるという作用を有するものである。
【０００９】
請求項３に記載の発明は、特に、側面電極を構成する第１の薄膜および第２の薄膜を、基板の裏面から側面にかけて略Ｌ字型に構成したもので、この構成によれば、基板の端縁に設けられ、かつ上面電極に電気的に接続される側面電極のうち、第１の薄膜と第２の薄膜を薄膜技術により形成する場合、基板の一方の面である裏面側のみから容易に形成できるため、生産性の向上が図れるという作用を有するものである。
【００１０】
請求項４に記載の発明は、シート状の基板の上面に複数対の上面電極層を設ける工程と、前記複数対の上面電極層と電気的に接続される複数の抵抗体を設ける工程と、少なくとも前記複数の抵抗体を覆うように複数の保護層を設ける工程と、前記複数の抵抗体における前記複数対の上面電極層間の抵抗値を修正するためにトリミングを行う工程と、前記シート状の基板に、前記複数対の上面電極層を分離して複数の短冊状基板に分割するためのスリット状の第１の分割部を複数形成する工程と、前記スリット状の第１の分割部が複数形成された状態のシート状の基板の裏面側から薄膜技術により複数のスリット状の第１の分割部の内面における基板の側面と前記上面電極層の側面に側面電極を形成する工程と、前記シート状の基板における複数の短冊状基板に、前記複数の抵抗体が個々に分離されて個片状基板に分割されるように前記スリット状の第１の分割部と直交する方向に複数の第２の分割部を形成する工程とを備えたもので、この製造方法によれば、スリット状の第１の分割部が複数形成された状態のシート状の基板の裏面側から薄膜技術により複数のスリット状の第１の分割部の内面における基板の側面と上面電極層の側面に側面電極を形成するようにしているため、この側面電極は複数の短冊状基板毎に形成することなく、シート状の基板の状態で一括して形成することができるという作用を有するものである。
【００１１】
請求項５に記載の発明は、特に、複数のスリット状の第１の分割部をダイシングにより形成したもので、この製造方法によれば、個片状基板の寸法分類が不要であるため、工程の煩雑さをなくすることができるとともに、ダイシングも半導体等で一般的なダイシング設備を用いて容易に行うことができるという作用を有するものである。
【００１２】
請求項６に記載の発明は、特に、複数の第２の分割部をダイシングにより形成したもので、この製造方法によれば、個片状基板の寸法分類が不要であるため、工程の煩雑さをなくすることができるとともに、ダイシングも半導体等で一般的なダイシング設備を用いて容易に行うことができるという作用を有するものである。
【００１３】
請求項７に記載の発明は、特に、複数の第２の分割部をレーザーにより形成し、その後、この第２の分割部を分割して個片状基板に分割するようにしたもので、この製造方法によれば、第２の分割部を形成する毎に個片化されるのではなく、２段階で個片化されるという作用を有するとともに、個片状基板の分割はチップ抵抗器で一般的な分割設備を用いて行うことができるという作用を有するものである。
【００１４】
請求項８に記載の発明は、特に、シート状の基板の端部に不要領域部を形成し、かつ複数のスリット状の第１の分割部は複数の短冊状基板が前記不要領域部につながった状態となるようにシート状の基板に形成したもので、この製造方法によれば、複数のスリット状の第１の分割部を形成した後も複数の短冊状基板は不要領域部につながっているため、シート状の基板が複数の短冊状基板に細かく分類されるということはなく、したがって、複数のスリット状の第１の分割部を形成した後も、不要領域部を有するシート状の基板の状態で後工程を行うことができるため、工法設計が簡略化できるという作用を有するものである。
【００１５】
請求項９に記載の発明は、シート状の基板の上面に複数対の上面電極層を設ける工程と、前記複数対の上面電極層と電気的に接続される複数の抵抗体を設ける工程と、前記複数の抵抗体を覆うようにガラスを主成分とする複数の第１の保護層を設ける工程と、前記複数の抵抗体における前記複数対の上面電極層間の抵抗値を修正するためにトリミングを行う工程と、少なくとも前記ガラスを主成分とする複数の第１の保護層を覆うように樹脂層からなる複数の第２の保護層を設ける工程と、前記シート状の基板に、前記複数対の上面電極層を分離して複数の短冊状基板に分割するためのスリット状の第１の分割部を複数形成する工程と、前記スリット状の第１の分割部が複数形成された状態のシート状の基板の裏面側から薄膜技術により複数のスリット状の第１の分割部の内面における基板の側面と前記上面電極層の側面に側面電極を形成する工程と、前記シート状の基板における複数の短冊状基板に、前記複数の抵抗体が個々に分離されて個片状基板に分割されるように前記スリット状の第１の分割部と直交する方向に複数の第２の分割部を形成する工程とを備えたもので、この製造方法によれば、スリット状の第１の分割部が複数形成された状態のシート状の基板の裏面側から薄膜技術により複数のスリット状の第１の分割部の内面における基板の側面と上面電極層の側面に側面電極を形成するようにしているため、この側面電極は複数の短冊状基板毎に形成することなく、シート状の基板の状態で一括して形成することができる。また複数の抵抗体を覆うようにガラスを主成分とする複数の第１の保護層を設ける工程と、少なくとも前記ガラスを主成分とする複数の第１の保護層を覆うように樹脂層からなる複数の第２の保護膜を設ける工程とを備えているため、ガラスを主成分とする第１の保護層でレーザートリミング時のクラックの発生を防止することができ、これにより、電流雑音を小さくできるとともに、樹脂層からなる第２の保護層で抵抗体全体が覆われることにより、耐湿特性に優れた抵抗特性を確保できるという作用を有するものである。
【００１６】
請求項１０に記載の発明は、特に、側面電極を、基板の端縁側に位置し、かつ基板への付着性が良いＣｒ薄膜、Ｔｉ薄膜、Ｃｒ系合金薄膜、Ｔｉ系合金薄膜のいずれかからなる第１の薄膜と、この第１の薄膜と電気的に接続されるＣｕ系の合金薄膜からなる第２の薄膜と、少なくとも前記第２の薄膜を覆うニッケルめっきからなる第１のめっき膜と、少なくとも前記第１のめっき膜を覆う第２のめっき膜の複層構造により構成し、かつ前記第１の薄膜と第２の薄膜は、スリット状の第１の分割部が複数形成された状態のシート状の基板の裏面側から薄膜技術により複数のスリット状の第１の分割部の内面における基板の側面と上面電極層の側面に形成し、さらに前記第１のめっき膜と第２のめっき膜は、第２の分割部により分割された個片状基板における前記第２の薄膜を覆うように設けたもので、この製造方法によれば、第１の薄膜と電気的に接続される第２の薄膜をＣｕ系の合金薄膜により構成しているため、第１の薄膜と第２の薄膜との界面においては、Ｃｕ系の合金薄膜を構成する添加金属と第１の薄膜の構成金属とが全率固溶体を構成することになり、これにより、第１の薄膜と第２の薄膜との密着力が向上して信頼性を高めることができる。また第１のめっき膜と第２のめっき膜は、第２の分割部により分割された個片状基板における第２の薄膜を覆うように設けているため、めっき膜の形成もバレルめっき等により確実に形成することができるという作用を有するものである。
【００１７】
請求項１１に記載の発明は、特に、複数のスリット状の第１の分割部をダイシングにより形成したもので、この製造方法によれば、個片状基板の寸法分類が不要であるため、工程の煩雑さをなくすることができるとともに、ダイシングも半導体等で一般的なダイシング設備を用いて容易に行うことができるという作用を有するものである。
【００１８】
請求項１２に記載の発明は、特に、複数の第２の分割部をダイシングにより形成したもので、この製造方法によれば、個片状基板の寸法分類が不要であるため、工程の煩雑さをなくすることができるとともに、ダイシングも半導体等で一般的なダイシング設備を用いて容易に行うことができるという作用を有するものである。
【００１９】
請求項１３に記載の発明は、特に、複数の第２の分割部をレーザーにより形成し、その後、この第２の分割部を分割して個片状基板に分割するようにしたもので、この製造方法によれば、第２の分割部を形成する毎に個片化されるのではなく、２段階で個片化されるという作用を有するとともに、個片状基板の分割はチップ抵抗器で一般的な分割設備を用いて行うことができるという作用を有するものである。
【００２０】
請求項１４に記載の発明は、特に、シート状の基板の端部に不要領域部を形成し、かつ複数のスリット状の第１の分割部は複数の短冊状基板が前記不要領域部につながった状態となるようにシート状の基板に形成したもので、この製造方法によれば、複数のスリット状の第１の分割部を形成した後も複数の短冊状基板は不要領域部につながっているため、シート状の基板が複数の短冊状基板に細かく分類されるということはなく、したがって、複数のスリット状の第１の分割部を形成した後も、不要領域部を有するシート状の基板の状態で後工程を行うことができるため、工法設計が簡略化できるという作用を有するものである。
【００２１】
【発明の実施の形態】
以下、本発明の一実施の形態における抵抗器について、図面を参照しながら説明する。
【００２２】
図１は本発明の一実施の形態における抵抗器の断面図である。
【００２３】
図１に示すように本発明の一実施の形態における抵抗器は、基板１１と、この基板１１の上面に設けられた一対の上面電極１２と、この一対の上面電極１２間に設けられた抵抗体１３と、前記基板１１の端縁に設けられ、かつ略コ字型に囲む一対の側面電極１４とにより構成される。
【００２４】
上記抵抗体１３は、その抵抗値を所望の抵抗値に修正するために、抵抗体１３の上面にガラス等からなる第１の保護層１５を設け、そしてこの第１の保護層１５および抵抗体１３にレーザー等によりトリミング溝１６を設けて抵抗値を修正する。その後、少なくとも前記抵抗体１３を、好ましくは一対の上面電極１２間を重畳して跨ぐ抵抗体１３と、第１の保護層１５およびトリミング溝１６を覆うように樹脂またはガラス等からなる第２の保護層１７を備える。
【００２５】
また、前記一対の側面電極１４は、基板１１の端縁を上面電極１２と電気的に接続されるように略コ字型に囲んでいるもので、この側面電極１４は、基板１１の端縁側から順次形成される第１の薄膜１８と、第２の薄膜１９と、第１のめっき膜２０および第２のめっき膜２１の複層構造により構成される。第１の薄膜１８は、基板１１の裏面から側面にかけて略Ｌ字型に、基板１１への付着性の良いＣｒ，Ｃｒ系合金薄膜、Ｔｉ，Ｔｉ系合金薄膜またはＮｉＣｒ合金薄膜のいずれかをスパッタ、真空蒸着、イオンプレーティング、Ｐ−ＣＶＤ等の薄膜技術により形成する。第２の薄膜１９は、基板１１の裏面から側面にかけて略Ｌ字型に、かつ、第１の薄膜１８と重畳して電気的に接続されるＣｕ系の合金薄膜をスパッタ、真空蒸着、イオンプレーティング、Ｐ−ＣＶＤ等の薄膜技術により形成する。
【００２６】
第１のめっき膜２０は、露出する上面電極１２および第２の薄膜１９を覆うようにはんだの拡散防止または耐熱性に優れるＮｉめっき膜により形成する。さらに、第２のめっき膜２１は、第１のめっき膜２０を覆うようにはんだ付着性の良いＰｂ−Ｓｎめっき膜またはＳｎめっき膜により形成する。
【００２７】
以上のように構成された本発明の一実施の形態における抵抗器について、次にその製造方法を図面を参照しながら説明する。
【００２８】
図２は本発明の一実施の形態における抵抗器を製造する場合に用いられるシート状の基板の全周囲の端部に不要領域部を形成した上面図、図３（ａ）（ｂ）、図５（ａ）（ｂ）、図７（ａ）（ｂ）、図９（ａ）（ｂ）、図１１（ａ）（ｂ）および図１３（ａ）（ｂ）は本発明の一実施の形態における抵抗器の製造工程を示す断面図、図４（ａ）（ｂ）、図６（ａ）（ｂ）、図８（ａ）（ｂ）、図１０（ａ）（ｂ）、図１２（ａ）（ｂ）および図１４（ａ）（ｂ）は本発明の一実施の形態における抵抗器の製造工程を示す上面図である。
【００２９】
まず、図２、図３（ａ）、図４（ａ）に示すように、焼成済みの９６％純度のアルミナからなる厚み０．２ｍｍの絶縁性を有するシート状の基板３１を準備する。この場合、シート状の基板３１は、図２に示すように、全周囲の端部に最終的には製品とならない不要領域部３１ａを有しており、かつこの不要領域部３１ａは略ロ字状に構成されているものである。
【００３０】
そして、このシート状の基板３１の上面にスクリーン印刷工法により銀を主成分とする複数対の上面電極層３２を形成し、ピーク温度８５０℃の焼成プロファイルで焼成することにより、上面電極層３２を安定な膜とした。
【００３１】
次に、図２、図３（ｂ）、図４（ｂ）に示すように、複数対の上面電極層３２を跨ぐように、スクリーン印刷工法により酸化ルテニウム系の複数の抵抗体３３を形成し、ピーク温度８５０℃の焼成プロファイルで焼成することにより、抵抗体３３を安定な膜とした。
【００３２】
次に、図５（ａ）、図６（ａ）に示すように、複数対の抵抗体３３の一部を覆うように、スクリーン印刷工法によりガラスを主成分とする複数の第１の保護層３４を形成し、ピーク温度６００℃の焼成プロファイルで焼成することにより、ガラスを主成分とする第１の保護層３４を安定な膜とした。
【００３３】
次に、図５（ｂ）、図６（ｂ）に示すように、複数対の上面電極層３２間の抵抗体３３の抵抗値を一定の値に修正するために、レーザートリミング工法によりトリミングを行い、複数のトリミング溝３５を形成した。
【００３４】
次に、図７（ａ）、図８（ａ）に示すように、図面上の縦方向に並ぶガラスを主成分とする複数の第１の保護層３４の全部を覆うとともに、抵抗体３３の一部および上面電極層３２の一部を覆うように、スクリーン印刷工法により樹脂を主成分とする複数の第２の保護層３６を形成し、ピーク温度２００℃の硬化プロファイルで硬化することにより、第２の保護層３６を安定な膜とした。
【００３５】
次に、図２、図７（ｂ）、図８（ｂ）に示すように、第２の保護層３６を形成したシート状の基板３１の全周囲の端部に形成された不要領域部３１ａを除いて、複数対の上面電極層３２を分離して複数の短冊状基板３１ｂに分割するためのスリット状の第１の分割部３７をダイシング工法により複数形成する。この場合、複数のスリット状の第１の分割部３７は７００μｍピッチで形成されており、かつこのスリット状の第１の分割部３７の幅は１２０μｍ幅となっている。また前記複数のスリット状の第１の分割部３７は、シート状の基板３１を上下方向に貫通する貫通孔で形成されているものである。そしてまた前記シート状の基板３１は、不要領域部３１ａを除いてダイシング工法により複数のスリット状の第１の分割部３７を形成しているため、スリット状の第１の分割部３７を形成した後も複数の短冊状基板３１ｂは不要領域部３１ａにつながっているため、シート状態を呈しているものである。
【００３６】
次に、図９（ａ）、図１０（ａ）に示すように、マスク（図示せず）を用いたスパッタ工法により、シート状の基板３１の裏面側から、基板３１の裏面の一部と複数のスリット状の第１の分割部３７の内面における基板３１の端面、上面電極層３２の端面に、側面電極３８の一部を構成する基板３１への付着性が良いＣｒ薄膜からなる複数対の第１の薄膜３９を略Ｌ字型に形成する。
【００３７】
次に、図９（ｂ）、図１０（ｂ）に示すように、マスク（図示せず）を用いたスパッタ工法により、シート状の基板３１の裏面側から、複数対の第１の薄膜３９に重なるように、側面電極３８の一部を構成するＣｕ−Ｎｉ合金薄膜からなる複数対の第２の薄膜４０を略Ｌ字型に形成する。
【００３８】
次に、図２、図１１（ａ）（ｂ）、図１２（ａ）（ｂ）に示すように、シート状の基板３１の全周囲の端部に形成された不要領域部３１ａを除いて、シート状の基板３１における複数の短冊状基板３１ｂに、複数の抵抗体３３が個々に分離されて個片状基板３１ｃに分割されるようにスリット状の第１の分割部３７と直交する方向に複数の第２の分割部４１を形成する。この場合、複数の第２の分割部４１は４００μｍピッチで形成されるため、第２の分割部４１の幅は１００μｍ幅となっている。またこの複数の第２の分割部４１はレーザースクライブにより形成しているもので、まず、図１１（ａ）、図１２（ａ）に示すようにレーザーにより分割溝を形成し、その後、図１１（ｂ）、図１２（ｂ）に示すように一般的な分割設備により分割溝の部分を分割して個片状基板３１ｃに分割するようにしている。すなわち、この分割方法は、第２の分割部４１を形成する毎に個片化されるのではなく、２段階で個片化されるという作用を有するものである。そしてまたこの複数の第２の分割部４１は不要領域部３１ａを除いて複数の短冊状基板３１ｂにレーザースクライブにより形成するようにしているため、この複数の第２の分割部４１を形成する毎に個片状基板３１ｃに分割され、そしてこの個片状基板３１ｃは不要領域部３１ａから分離されるものである。
【００３９】
次に、図１３（ａ）、図１４（ａ）に示すように、電気めっき工法を用いて、側面電極３８の一部を構成する第２の薄膜４０を覆うとともに、露出している上面電極層３２の上面を覆うように厚みが約２〜６μｍで、かつはんだの拡散防止または耐熱性に優れるニッケルめっきからなる第１のめっき膜４２を形成する。
【００４０】
最後に、図１３（ｂ）、図１４（ｂ）に示すように、電気めっき工法を用いて、ニッケルめっきからなる第１のめっき膜４２を覆うように、厚みが約３〜８μｍで、かつはんだ付着性の良いスズめっきからなる第２のめっき膜４３を形成する。
【００４１】
以上の製造工程により、本発明の一実施の形態における抵抗器は製造されるものである。
【００４２】
なお、上記製造工程においては、第２のめっき膜４３をスズめっきで構成しているが、これに限定されるものではなく、スズ合金系の材料、例えば、はんだ等からなるめっきでもよく、これらの材料で構成した場合は、リフローはんだ付け時に安定したはんだ付けができるものである。
【００４３】
また上記製造工程においては、抵抗体３３等を覆う保護層を、抵抗体３３を覆うガラスを主成分とする第１の保護層３４と、この第１の保護層３４を覆うとともにトリミング溝３５を覆う樹脂を主成分とする第２の保護層３６の２層で構成しているため、前記第１の保護層３４でレーザートリミング時のクラックの発生を防止して電流雑音を小さくできるとともに、前記樹脂を主成分とする第２の保護層３６で抵抗体３３全体が覆われるため、耐湿性に優れた抵抗特性を確保できるものである。
【００４４】
そしてまた上記製造工程により製造した抵抗器は、ダイシング工法により形成されたスリット状の第１の分割部３７およびレーザースクライブにより形成された第２の分割部４１の間隔が正確（±０．００５ｍｍ以内）であるとともに、側面電極３８を構成する第１の薄膜３９、第２の薄膜４０の厚みおよび第１のめっき膜４２、第２のめっき膜４３の厚みも正確であるため、製品である抵抗器の全長および全幅は、正確に長さ０．６ｍｍ×幅０．３ｍｍとなるものである。また上面電極層３２および抵抗体３３のパターン精度も個片状基板の寸法ランク分類が不要であるとともに同一の個片状基板の寸法ランク内での寸法バラツキを考慮する必要がないため、抵抗体３３の有効面積も従来品に比べて大きくとることができるものである。すなわち、従来品における抵抗体は長さ約０．２０ｍｍ×幅０．１９ｍｍであったのに対し、本発明の一実施の形態における抵抗器の抵抗体３３は長さ約０．２５ｍｍ×幅０．２４ｍｍとなって面積では約１．６倍以上となるものである。
【００４５】
さらに上記製造工程においては、複数のスリット状の第１の分割部３７をダイシング工法を用いて形成するとともに、個片状基板の寸法分類が不要なシート状の基板３１を用いているため、従来のような個片状基板の寸法分類は不要となり、これにより工程の煩雑さをなくすることができるとともに、ダイシングも半導体等で一般的なダイシング設備を用いて容易に行うことができるものである。
【００４６】
さらにまた上記製造工程においては、シート状の基板３１は全周囲の端部に最終的には製品とならない不要領域部３１ａを形成し、かつ複数のスリット状の第１の分割部３７は複数の短冊状基板３１ｂが前記不要領域部３１ａにつながった状態となるようにシート状の基板３１に形成しているため、複数のスリット状の第１の分割部３７を形成した後も複数の短冊状基板３１ｂは不要領域部３１ａにつながっており、そのため、シート状の基板３１が複数の短冊状基板３１ｂに細かく分離されるということはなく、したがって、複数のスリット状の第１の分割部３７を形成した後も、不要領域部３１ａを有するシート状の基板３１の状態で後工程を行うことができるため、工法設計が簡略化できるものである。
【００４７】
また上記製造工程においては、側面電極３８を構成する第１の薄膜３９と第２の薄膜４０をマスク（図示せず）を用いたスパッタ工法により形成しているが、これに限定されるものではなく、上記マスク（図示せず）を用いずに、シート状の基板の裏面全体にも薄膜を形成しておき、その後、裏面全体に形成された薄膜の不要部分、すなわち裏面の略中央部分をレーザー照射により剥離除去して側面電極３８における裏面部分を形成するようにしてもよいものである。
【００４８】
次に、上記製造工程における側面電極３８の一部を構成する第２の薄膜４０について詳述する。
【００４９】
第２の薄膜４０の材料はＣｕ系の合金薄膜のうち、特にＣｕ−Ｎｉ合金薄膜が好ましい。
【００５０】
Ｃｕ−Ｎｉ合金薄膜は、添加材料のＮｉが合金薄膜主元素のＣｕおよび第１の薄膜３９に対してＣｕの全組成比率（範囲）においてＮｉが均一に溶け合うという「全率固溶体」を構成する。そのため、Ｃｕ−Ｎｉ合金薄膜からなる第２の薄膜４０と第１の薄膜３９との界面にはＮｉが拡散することになって強固な密着層を形成することになり、これにより、密着性の向上が図れる。また、第２の薄膜４０の最表面に存在するＮｉは、第１のめっき膜４２に用いられるニッケルめっきを形成するためのめっき浴で第２の薄膜４０の表面に対して防食性を高める効果があるため、第１のめっき膜４２と第２の薄膜４０の界面における密着性についても向上が図れる。
【００５１】
ここで、本発明の一実施の形態における「全率固溶体」とは、図１５に示す第２の薄膜を構成するＣｕ−Ｎｉ合金薄膜の平衡状態図の通りである。図１５において、横軸にＮｉ金属の添加量を、縦軸に温度をとると、実線で示す液相線より高い温度では液相状態であり、点線で示す固相線より低い温度では固相状態であり、これらの実線および点線で囲まれた領域は固相と液相とが混じり合った状態、つまり「全率固溶体」である。すなわち、本発明の一実施の形態におけるＣｕ−Ｎｉ合金薄膜からなる第２の薄膜４０は、母体金属である面心立方格子のＣｕ金属中に、同じ面心立方格子の結晶構造を有するＮｉ金属原子が溶け込んで一つの相である面心立方格子構造の置換型固溶体を全組織範囲に亘って形成するものである。
【００５２】
また、図１６はＣｒ薄膜からなる第１の薄膜３９とＣｕ−Ｎｉ合金薄膜からなる第２の薄膜４０のＳＩＭＳによる組成分析結果を示したものである。この時の第２の薄膜４０のＮｉ添加量は６．２ｗｔ％である。図１６は横軸にＣｕ−Ｎｉ合金薄膜の表面からの膜厚をスパッタリング時間で示し、かつ縦軸は各層でのＣｕ，Ｎｉ，Ｃｒ等の原子数を示したものである。この図１６から明らかなように、Ｃｕ−Ｎｉ合金薄膜層とＣｒ薄膜層との界面にはＣｕ，ＮｉおよびＣｒが各々存在する拡散層があるものの、Ｃｕ−Ｎｉ合金薄膜層の表面からＣｒ薄膜層との界面までの間においては、Ｃｕ金属中にＮｉ金属が均一に存在しているものである。これは、Ｃｕ−Ｎｉ合金薄膜からなる第２の薄膜４０が、Ｃｕ金属中にＮｉ金属が完全に溶け込んで一つの相を形成する「全固溶体」であることを示しているものである。またこの図１６では、Ｎｉ添加量を６．２ｗｔ％としたが、Ｎｉ添加量は全組成範囲において図１６に示したものと同一の結果が得られるものである。
【００５３】
次に、上記のように構成された本発明の一実施の形態における抵抗器において、Ｃｕ−Ｎｉ合金薄膜を第２の薄膜４０として用いた特性について説明する。
【００５４】
特性を説明する試験方法としては、「めっきの密着性試験方法／ＪＩＳＨ８５０４Ｃ」に規定された方法により実施し、試験用テープには図１７（ａ）（ｂ）に示すように、「セロハン粘着テープ／ＪＩＳＺ１５２２」に規定された幅１８ｍｍの粘着テープ４４を使用した。この時、粘着テープ４４の引き剥がし方向は、「ＪＩＳＨ８５０４」に記載の図１７（ａ）（ｂ）に示すように、アルミナ基板４５に対して垂直方向または傾斜する方向とした。
【００５５】
すなわち、この試験方法は、試験片としてアルミナ基板４５を用い、このアルミナ基板４５の側面部分に第１の薄膜３９としてＣｒ薄膜をスパッタ工法で形成し、次に、この第１の薄膜３９の上に第２の薄膜４０としてＣｕ−Ｎｉ合金薄膜を第１の薄膜３９と同様、スパッタ工法で構成する。その後、レーザーを用いてパターン幅０．３ｍｍのパターンを形成する。
【００５６】
その後、温度６５℃で湿度９５％の条件における加速試験を行い、次に、第２の薄膜４０の表面に粘着テープ４４を密着させた後、この粘着テープ４４を一気に引き剥がし、全パターン数に対して第２の薄膜４０が剥離したパターン数の比率を求め、密着性の評価を行った。
【００５７】
また第１のめっき膜４２と第２の薄膜４０の界面の密着性の評価用試験片については、第２の薄膜４０を形成した後、第１のめっき膜４２としてニッケルめっきを、さらに第２のめっき膜４３としてはんだめっきを電解めっきで形成したものを用いた。
【００５８】
評価は、Ｃｕ−Ｎｉ合金薄膜中のＮｉ添加量が「１．６ｗｔ％」「６．２ｗｔ％」「１２．６ｗｔ％」であるものと、Ｎｉ添加量が「０ｗｔ％」であるものについて行った。
【００５９】
（表１）は、加速試験５００時間後の第２の薄膜４０と第１の薄膜３９の界面における剥離率の評価結果を示したものである。
【００６０】
【表１】

【００６１】
（表１）から明らかなように、Ｃｕ薄膜中にＮｉを添加することにより、第２の薄膜４０と第１の薄膜３９の界面における密着性が大幅に向上するものである。
【００６２】
（表２）は、加速試験５００時間後の第１のめっき膜４２と第２の薄膜４０の界面における剥離率の評価結果を示したものである。
【００６３】
【表２】

【００６４】
（表２）から明らかなように、Ｃｕ薄膜中にＮｉを添加することにより、第１のめっき膜４２と第２の薄膜４０の界面における密着性が大幅に向上するものである。
【００６５】
なお、上記本発明の一実施の形態においては、第１の薄膜３９と第２の薄膜４０をスパッタ工法を用いて形成したものについて説明したが、このスパッタ工法に限定されるものではなく、その他の工法である真空蒸着法、イオンプレーティング法、Ｐ−ＣＶＤ等の薄膜技術により第１の薄膜３９と第２の薄膜４０を形成した場合においても、本発明の一実施の形態と同様の効果が得られるものである。
【００６６】
また上記本発明の一実施の形態においては、第１の薄膜３９をＣｒ薄膜で形成したものについて説明したが、このＣｒ薄膜に限定されるものではなく、基板への付着性が良いその他のＣｒ−Ｓｉ合金薄膜、Ｎｉ−Ｃｒ合金薄膜、Ｔｉ薄膜、Ｔｉ系合金薄膜等の材料で第１の薄膜３９を形成した場合においても、本発明の一実施の形態と同様の効果が得られるものである。
【００６７】
そしてまた上記本発明の一実施の形態においては、最終的には製品とならない不要領域部３１ａをシート状の基板３１の全周囲の端部に形成して略ロ字状に構成したものについて説明したが、この不要領域部３１ａはシート状の基板３１の全周囲の端部に必ずしも形成する必要はなく、例えば、図１８に示すようにシート状の基板３１の一端部に不要領域部３１ｄを形成した場合、図１９に示すようにシート状の基板３１の両端部に不要領域部３１ｅを形成した場合、図２０に示すようにシート状の基板３１の３つの端部に不要領域部３１ｆを形成した場合においても、上記本発明の一実施の形態と同様の効果が得られるものである。
【００６８】
さらに上記本発明の一実施の形態においては、複数の第２の分割部４１をレーザースクライブにより形成したものについて説明したが、この第２の分割部４１は、スリット状の第１の分割部３７と同様にダイシング工法を用いて形成するようにしてもよいものである。この場合、ダイシングは半導体等で一般的なダイシング設備を用いて容易に行うことができるものである。
【００６９】
上記したように本発明の一実施の形態においては、図１に示すように、基板１１と、この基板１１の一主面（上面）に設けられた抵抗体１３と、少なくともこの抵抗体１３を覆うように設けられた第１の保護膜１５および第２の保護膜１７とを備え、前記基板１１の一主面（上面）に一対の上面電極１２を設けるとともに、この一対の上面電極１２間に抵抗体１３を設け、さらに前記基板１１の端縁に前記上面電極１２と電気的に接続されるように略コ字型に囲む一対の側面電極１４を設け、かつこの側面電極１４は、基板１１の端縁側から順次形成される基板１１への付着性の良いＣｒ薄膜、Ｔｉ薄膜、Ｃｒ系合金薄膜、Ｔｉ系合金薄膜またはＮｉＣｒ合金薄膜からなる第１の薄膜１８と、この第１の薄膜１８と電気的に接続されるＣｕ系の合金薄膜からなる第２の薄膜１９と、少なくともこの第２の薄膜１９を覆うＮｉめっきからなる第１のめっき膜２０と、少なくともこの第１のめっき膜２０を覆う第２のめっき膜２１の複層構造により構成しているため、Ｃｕ系の合金薄膜を構成する添加金属と第１の薄膜１８の構成金属とは第１の薄膜１８を第２の薄膜１９との界面において全率固溶体を構成することになり、これにより、第１の薄膜１８と第２の薄膜１９の密着力が向上するという効果が得られるものである。
【００７０】
また側面電極１４を構成する第２の薄膜１９は、ＣｕにＮｉを１．６重量％以上含有させたＣｕ−Ｎｉ合金薄膜で構成しているため、Ｃｕ−Ｎｉ合金薄膜のＮｉ成分と第１の薄膜１８の構成金属とが全率固溶体を構成することになり、これにより、第１の薄膜１８と第２の薄膜１９との間の密着力が向上するという効果が得られるものである。
【００７１】
そしてまた側面電極１４を構成する第１の薄膜１８および第２の薄膜１９は、基板１１の裏面から側面にかけて略Ｌ字型に構成しているため、第１の薄膜１８と第２の薄膜１９を薄膜技術により形成する場合、基板１１の裏面側のみから基板１１の上面側に向けて容易に形成することができ、これにより、生産性が向上するという効果が得られるものである。
【００７２】
【発明の効果】
以上のように本発明の抵抗器は、基板の端縁に一対の上面電極と電気的に接続されるように設けられた略コ字型の一対の側面電極を、第１の薄膜と、第２の薄膜と、第１のめっき膜と、第２のめっき膜の複層構造により構成し、かつ第１の薄膜と電気的に接続される第２の薄膜をＣｕ系の合金薄膜により構成しているため、第１の薄膜と第２の薄膜との界面においては、Ｃｕ系の合金薄膜を構成する添加金属と第１の薄膜の構成金属とが全率固溶体を構成することになり、これにより、第１の薄膜と第２の薄膜との間の密着力が向上して信頼性を高めることができるという効果を有するものである。
【図面の簡単な説明】
【図１】本発明の一実施の形態における抵抗器の断面図
【図２】同抵抗器を製造する場合に用いられるシート状の基板の全周囲の端部に不要領域部を形成した状態を示す上面図
【図３】（ａ）（ｂ）同抵抗器の製造工程を示す断面図
【図４】（ａ）（ｂ）同抵抗器の製造工程を示す平面図
【図５】（ａ）（ｂ）同抵抗器の製造工程を示す断面図
【図６】（ａ）（ｂ）同抵抗器の製造工程を示す平面図
【図７】（ａ）（ｂ）同抵抗器の製造工程を示す断面図
【図８】（ａ）（ｂ）同抵抗器の製造工程を示す平面図
【図９】（ａ）（ｂ）同抵抗器の製造工程を示す断面図
【図１０】（ａ）（ｂ）同抵抗器の製造工程を示す平面図
【図１１】（ａ）（ｂ）同抵抗器の製造工程を示す断面図
【図１２】（ａ）（ｂ）同抵抗器の製造工程を示す平面図
【図１３】（ａ）（ｂ）同抵抗器の製造工程を示す断面図
【図１４】（ａ）（ｂ）同抵抗器の製造工程を示す平面図
【図１５】同抵抗器の第２の薄膜を構成するＣｕ−Ｎｉ合金薄膜の平衡状態図
【図１６】同抵抗器の第１の薄膜と第２の薄膜のＳＩＭＳによる組成分析結果の説明図
【図１７】（ａ）（ｂ）特性を説明する試験方法を示す図
【図１８】同抵抗器を製造する場合に用いられるシート状の基板の一端部に不要領域部を形成した状態を示す上面図
【図１９】同抵抗器を製造する場合に用いられるシート状の基板の両端部に不要領域部を形成した状態を示す上面図
【図２０】同抵抗器を製造する場合に用いられるシート状の基板の３つの端部に不要領域部を形成した状態を示す上面図
【図２１】従来の抵抗器の断面図
【符号の説明】
１１基板
１２上面電極
１３抵抗体
１４側面電極
１５第１の保護層
１６トリミング溝
１７第２の保護層
１８第１の薄膜
１９第２の薄膜
２０第１のめっき膜
２１第２のめっき膜
３１シート状の基板
３１ａ，３１ｄ〜３１ｆ不要領域部
３１ｂ短冊状基板
３１ｃ個片状基板
３２上面電極層
３３抵抗体
３４第１の保護層
３５トリミング溝
３６第２の保護層
３７第１の分割部
３８側面電極
３９第１の薄膜
４０第２の薄膜
４１第２の分割部
４２第１のめっき膜
４３第２のめっき膜[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a resistor and a manufacturing method thereof, and more particularly to a fine resistor and a manufacturing method thereof.
[0002]
[Prior art]
As a conventional resistor of this type, a “resistor having a four-side structure of side electrodes” disclosed in Japanese Patent Laid-Open No. 3-80501 is known.
[0003]
As shown in FIG. 21, the resistor is provided with a resistance layer 3 so as to straddle a pair of upper surface electrode films 2 provided at both ends of the upper surface of the substrate 1 and on the inner side of the end surface of the substrate 1. A pair of U-shaped side electrodes 4 electrically connected to the pair of upper surface electrode films 2 are provided on the end surface of the substrate 1. The side electrode 4 includes a first U-shaped thin metal film 5 made of a NiCr thin film, a Ti thin film, or a Cr thin film electrically connected to the upper surface electrode film 2 in the lowermost layer, and the first metal thin film 5. A second metal thin film 6 made of a low-resistance Cu thin film superposed on the first metal plated film 7 made of a Ni plated film superimposed on the second metal thin film 6, and the first metal plated film 7 has a four-layer structure of a second metal plating film 8 made of a Pb—Sn plating film or an Sn plating film overlapping with 7.
[0004]
[Problems to be solved by the invention]
However, in the above-described conventional resistor, the second metal thin film 6 in the side electrode 4 is composed of a low-resistance Cu thin film. Therefore, if this resistor is left in an atmosphere of high humidity, the second resistance is reduced. At the interface between the Cu thin film that is the metal thin film 6 and the first metal thin film 5 that is the lower layer, it is difficult for the first metal thin film 5 and the second metal thin film 6 to be solid-dissolved. When adsorbed, the second metal thin film 6 easily peels off from the first metal thin film 5.
[0005]
The present invention solves the above-described conventional problems, and provides a highly reliable resistor having improved adhesion between the first thin film and the second thin film constituting the side electrode, and a method for manufacturing the same. It is intended to do.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, the present invention has the following configuration.
[0007]
The invention according to claim 1 of the present invention includes a substrate, a pair of upper surface electrodes formed on one main surface of the substrate, a resistor provided so as to be electrically connected to the pair of upper surface electrodes, A protective layer provided to cover at least the resistor, and a pair of substantially U-shaped side electrodes provided on the edge of the substrate so as to be electrically connected to the pair of upper surface electrodes. A first thin film made of any one of a Cr thin film, a Ti thin film, a Cr-based alloy thin film, and a Ti-based alloy thin film located on the edge side of the substrate and having good adhesion to the substrate; A second thin film made of a Cu-based alloy thin film electrically connected to the first thin film, a first plating film made of nickel plating covering at least the second thin film, and at least the first plating film Consists of a multilayer structure of the second plating film covering, According to the configuration, the pair of substantially U-shaped side electrodes provided so as to be electrically connected to the pair of upper surface electrodes on the edge of the substrate, the first thin film, the second thin film, The first plating film and the second plating film are constituted by a plurality of structures, and the second thin film electrically connected to the first thin film is constituted by a Cu-based alloy thin film. At the interface between the thin film and the second thin film, the additive metal constituting the Cu-based alloy thin film and the constituent metal of the first thin film constitute a complete solid solution, whereby the first thin film It has the effect | action that the adhesive force between a 2nd thin film improves and it can improve reliability.
[0008]
According to the second aspect of the invention, in particular, the second thin film constituting the side electrode is constituted by a Cu—Ni alloy thin film containing 1.6% by weight or more of Ni in Cu. For example, at the interface between the first thin film and the second thin film, the adhesion between the Cu-Ni alloy thin film and the second thin film is improved, and the reliability can be increased. .
[0009]
The invention according to claim 3 is the one in which the first thin film and the second thin film constituting the side surface electrode are formed in a substantially L shape from the back surface to the side surface of the substrate. When the first thin film and the second thin film are formed by the thin film technology among the side electrodes provided on the edge of the substrate and electrically connected to the upper surface electrode, only from the back surface side which is one surface of the substrate Since it can be formed easily, it has the effect of improving productivity.
[0010]
The invention according to claim 4 includes a step of providing a plurality of pairs of upper surface electrode layers on the upper surface of the sheet-like substrate, a step of providing a plurality of resistors electrically connected to the plurality of pairs of upper surface electrode layers, A step of providing a plurality of protective layers so as to cover at least the plurality of resistors, a step of performing trimming to correct a resistance value between the plurality of pairs of upper surface electrode layers in the plurality of resistors, Forming a plurality of slit-shaped first divided portions on the substrate to separate the plurality of pairs of upper surface electrode layers into a plurality of strip-shaped substrates; and a plurality of the slit-shaped first divided portions. Forming a side electrode on the side surface of the substrate and the side surface of the upper surface electrode layer on the inner surface of the plurality of slit-shaped first divided portions from the back surface side of the formed sheet-shaped substrate by thin film technology; and the sheet On a substrate A plurality of second divided portions in a direction orthogonal to the slit-shaped first divided portion so that the plurality of resistors are individually separated and divided into individual piece-like substrates on a plurality of strip-shaped substrates. According to this manufacturing method, a plurality of slit-shaped first portions are formed by thin film technology from the back side of the sheet-like substrate in a state where a plurality of slit-shaped first divided portions are formed. Since side electrodes are formed on the side surface of the substrate and the side surface of the upper electrode layer on the inner surface of the divided portion, the side surface electrode is not formed for each of the plurality of strip-shaped substrates, but in a sheet-like substrate state. It has the effect | action that it can form in a lump.
[0011]
The invention according to claim 5 is the one in which a plurality of slit-shaped first divided portions are formed by dicing, and according to this manufacturing method, the size classification of the individual substrate is not necessary. In addition, the dicing can be easily performed using a general dicing equipment such as a semiconductor.
[0012]
In the invention described in claim 6, in particular, the plurality of second divided portions are formed by dicing, and according to this manufacturing method, the size classification of the individual substrate is not required, so that the process is complicated. In addition, the dicing can be easily performed using a general dicing equipment such as a semiconductor.
[0013]
In the invention according to claim 7, in particular, a plurality of second divided portions are formed by a laser, and then the second divided portions are divided and divided into individual substrates. According to the manufacturing method, it is not divided into pieces every time the second divided portion is formed, but has an effect of being divided into two stages, and the division of the piece-like substrate is performed by a chip resistor. It has the effect | action that it can carry out using a general division | segmentation installation.
[0014]
In the invention described in claim 8, in particular, an unnecessary region portion is formed at an end portion of the sheet-like substrate, and the plurality of slit-like first divided portions are connected to the unnecessary region portion by a plurality of strip-like substrates. According to this manufacturing method, the plurality of strip-shaped substrates are connected to unnecessary area portions even after the plurality of slit-shaped first divided portions are formed. Therefore, the sheet-shaped substrate is not finely classified into a plurality of strip-shaped substrates. Therefore, even after the plurality of slit-shaped first divided portions are formed, the sheet-shaped substrate having the unnecessary area portion is formed. Since the post-process can be performed in this state, the construction method design can be simplified.
[0015]
The invention according to claim 9 includes a step of providing a plurality of pairs of upper surface electrode layers on the upper surface of the sheet-like substrate, a step of providing a plurality of resistors electrically connected to the plurality of pairs of upper surface electrode layers, Providing a plurality of first protective layers mainly composed of glass so as to cover the plurality of resistors, and trimming to correct resistance values between the plurality of pairs of upper surface electrode layers in the plurality of resistors. A step of providing a plurality of second protective layers made of a resin layer so as to cover at least the plurality of first protective layers mainly composed of the glass; and the plurality of pairs of sheets on the sheet-like substrate. A step of forming a plurality of slit-shaped first divided portions for separating the upper surface electrode layer and dividing it into a plurality of strip-shaped substrates; and a sheet-like shape in which a plurality of the slit-shaped first divided portions are formed. Multiple thin film technology from the back side of the substrate The step of forming side electrodes on the side surface of the substrate on the inner surface of the slit-shaped first divided portion and the side surface of the upper surface electrode layer, and the plurality of strips in the sheet-like substrate, Forming a plurality of second divided portions in a direction orthogonal to the slit-shaped first divided portions so as to be divided into individual substrate, According to the present invention, the side surface of the substrate and the upper electrode layer on the inner surface of the plurality of slit-shaped first divided portions from the back surface side of the sheet-like substrate in a state where a plurality of the slit-shaped first divided portions are formed by the thin film technique Since the side electrodes are formed on the side surfaces, the side electrodes can be collectively formed in a sheet-like substrate state without being formed for each of the plurality of strip-like substrates. A step of providing a plurality of first protective layers mainly composed of glass so as to cover the plurality of resistors; and a resin layer covering at least the plurality of first protective layers mainly composed of the glass. And a step of providing a plurality of second protective films, the first protective layer mainly composed of glass can prevent cracks during laser trimming, thereby reducing current noise. In addition, since the entire resistor is covered with the second protective layer made of a resin layer, it has an action of ensuring resistance characteristics excellent in moisture resistance characteristics.
[0016]
In the invention according to claim 10, the side electrode is particularly located on the edge side of the substrate and has good adhesion to the substrate, from any one of a Cr thin film, a Ti thin film, a Cr alloy thin film, and a Ti alloy thin film. A first thin film comprising: a second thin film comprising a Cu-based alloy thin film electrically connected to the first thin film; and a first plating film comprising nickel plating covering at least the second thin film; And a state in which the first thin film and the second thin film are formed with a plurality of slit-shaped first division parts, at least comprising a multilayer structure of a second plating film covering at least the first plating film. Formed on the side surface of the substrate and the side surface of the upper electrode layer on the inner surface of the plurality of slit-shaped first divided portions from the back surface side of the sheet-like substrate by the thin film technique, and further, the first plating film and the second plating The film is in the form of individual pieces divided by the second division part. The second thin film is provided so as to cover the second thin film on the plate, and according to this manufacturing method, the second thin film electrically connected to the first thin film is constituted by a Cu-based alloy thin film. In addition, at the interface between the first thin film and the second thin film, the additive metal constituting the Cu-based alloy thin film and the constituent metal of the first thin film constitute a complete solid solution. The adhesion between the first thin film and the second thin film is improved, and the reliability can be increased. In addition, since the first plating film and the second plating film are provided so as to cover the second thin film on the piece-like substrate divided by the second division part, the plating film is also formed by barrel plating or the like. It has the effect | action that it can form reliably.
[0017]
In the invention described in claim 11, in particular, a plurality of slit-shaped first divided portions are formed by dicing, and according to this manufacturing method, the dimensional classification of the individual substrate is not necessary. In addition, the dicing can be easily performed using a general dicing equipment such as a semiconductor.
[0018]
In the invention described in claim 12, in particular, a plurality of second divided portions are formed by dicing, and according to this manufacturing method, the size classification of the individual substrate is not required, so that the process is complicated. In addition, the dicing can be easily performed using a general dicing equipment such as a semiconductor.
[0019]
In the invention described in claim 13, in particular, a plurality of second divided portions are formed by a laser, and then the second divided portions are divided into individual pieces of substrate. According to the manufacturing method, it is not divided into pieces every time the second divided portion is formed, but has an effect of being divided into two stages, and the division of the piece-like substrate is performed by a chip resistor. It has the effect | action that it can carry out using a general division | segmentation installation.
[0020]
In the invention described in claim 14, in particular, an unnecessary region portion is formed at an end portion of the sheet-like substrate, and the plurality of slit-like first divided portions are connected to the unnecessary region portion by a plurality of strip-like substrates. According to this manufacturing method, the plurality of strip-shaped substrates are connected to unnecessary area portions even after the plurality of slit-shaped first divided portions are formed. Therefore, the sheet-shaped substrate is not finely classified into a plurality of strip-shaped substrates. Therefore, even after the plurality of slit-shaped first divided portions are formed, the sheet-shaped substrate having the unnecessary area portion is formed. Since the post-process can be performed in this state, the construction method design can be simplified.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a resistor according to an embodiment of the present invention will be described with reference to the drawings.
[0022]
FIG. 1 is a sectional view of a resistor according to an embodiment of the present invention.
[0023]
As shown in FIG. 1, a resistor according to an embodiment of the present invention includes a substrate 11, a pair of upper surface electrodes 12 provided on the upper surface of the substrate 11, and a resistor provided between the pair of upper surface electrodes 12. It comprises a body 13 and a pair of side electrodes 14 provided on the edge of the substrate 11 and enclosed in a substantially U-shape.
[0024]
In order to correct the resistance value to a desired resistance value, the resistor 13 is provided with a first protective layer 15 made of glass or the like on the upper surface of the resistor 13, and the first protective layer 15 and the resistor. A trimming groove 16 is provided in 13 with a laser or the like to correct the resistance value. Thereafter, at least the resistor 13, preferably a resistor 13 that overlaps and straddles the pair of upper surface electrodes 12, and a second layer made of resin or glass so as to cover the first protective layer 15 and the trimming groove 16. A protective layer 17 is provided.
[0025]
The pair of side surface electrodes 14 surrounds the edge of the substrate 11 in a substantially U shape so as to be electrically connected to the upper surface electrode 12. The first thin film 18, the second thin film 19, the first plating film 20, and the second plating film 21 are sequentially formed. The first thin film 18 is sputtered in a substantially L shape from the back surface to the side surface of the substrate 11, either a Cr, Cr alloy thin film, Ti, Ti alloy thin film, or NiCr alloy thin film having good adhesion to the substrate 11. It is formed by thin film technology such as vacuum deposition, ion plating, P-CVD. The second thin film 19 is formed by sputtering, vacuum deposition, or ion plating of a Cu-based alloy thin film that is substantially L-shaped from the back surface to the side surface of the substrate 11 and that is electrically connected to the first thin film 18 in an overlapping manner. It is formed by thin film technology such as Ting and P-CVD.
[0026]
The first plating film 20 is formed of a Ni plating film that is excellent in prevention of solder diffusion or heat resistance so as to cover the exposed upper surface electrode 12 and the second thin film 19. Further, the second plating film 21 is formed of a Pb—Sn plating film or a Sn plating film having good solder adhesion so as to cover the first plating film 20.
[0027]
Next, a method of manufacturing the resistor according to the embodiment of the present invention configured as described above will be described with reference to the drawings.
[0028]
FIG. 2 is a top view in which an unnecessary region is formed at the end of the entire periphery of a sheet-like substrate used in manufacturing a resistor according to an embodiment of the present invention, and FIGS. 5 (a) (b), FIG. 7 (a) (b), FIG. 9 (a) (b), FIG. 11 (a) (b) and FIG. 13 (a) (b) are one embodiment of the present invention. Sectional drawing which shows the manufacturing process of the resistor in a form, FIG. 4 (a) (b), FIG. 6 (a) (b), FIG. 8 (a) (b), FIG. 10 (a) (b), FIG. (A) (b) and FIG. 14 (a), (b) are the top views which show the manufacturing process of the resistor in one embodiment of this invention.
[0029]
First, as shown in FIG. 2, FIG. 3 (a), and FIG. 4 (a), a sheet-like substrate 31 having a thickness of 0.2 mm made of baked 96% purity alumina is prepared. In this case, as shown in FIG. 2, the sheet-like substrate 31 has an unnecessary region portion 31a that does not eventually become a product at the end of the entire periphery, and the unnecessary region portion 31a has a substantially rectangular shape. It is comprised in the shape.
[0030]
Then, a plurality of pairs of upper surface electrode layers 32 mainly composed of silver are formed on the upper surface of the sheet-like substrate 31 by a screen printing method, and the upper surface electrode layer 32 is formed by firing with a firing profile having a peak temperature of 850 ° C. A stable membrane was obtained.
[0031]
Next, as shown in FIG. 2, FIG. 3 (b), and FIG. 4 (b), a plurality of ruthenium oxide-based resistors 33 are formed by screen printing so as to straddle a plurality of pairs of upper surface electrode layers 32. The resistor 33 was made into a stable film by firing with a firing profile having a peak temperature of 850 ° C.
[0032]
Next, as shown in FIG. 5A and FIG. 6A, a plurality of first protective layers mainly composed of glass by a screen printing method so as to cover a part of the plurality of pairs of resistors 33. 34 was formed and fired with a firing profile having a peak temperature of 600 ° C., whereby the first protective layer 34 mainly composed of glass was made a stable film.
[0033]
Next, as shown in FIGS. 5B and 6B, in order to correct the resistance value of the resistor 33 between the plurality of pairs of upper surface electrode layers 32 to a constant value, trimming is performed by a laser trimming method. A plurality of trimming grooves 35 were formed.
[0034]
Next, as shown in FIG. 7A and FIG. 8A, the first protective layer 34 mainly composed of glass arranged in the vertical direction on the drawing is covered, and the resistor 33 is covered. A plurality of second protective layers 36 mainly composed of a resin are formed by a screen printing method so as to cover a part and a part of the upper electrode layer 32, and cured with a curing profile having a peak temperature of 200 ° C. The second protective layer 36 was a stable film.
[0035]
Next, as shown in FIG. 2, FIG. 7B and FIG. 8B, the unnecessary region portion 31a formed at the end of the entire periphery of the sheet-like substrate 31 on which the second protective layer 36 is formed. Except for the above, a plurality of slit-shaped first divided portions 37 for separating the plurality of pairs of upper surface electrode layers 32 and dividing them into a plurality of strip-shaped substrates 31b are formed by a dicing method. In this case, the plurality of slit-shaped first divided portions 37 are formed at a pitch of 700 μm, and the width of the slit-shaped first divided portions 37 is 120 μm. The plurality of slit-shaped first division portions 37 are formed by through holes that penetrate the sheet-like substrate 31 in the vertical direction. And since the sheet-like substrate 31 is formed with a plurality of slit-shaped first divided portions 37 by a dicing method except for the unnecessary region portion 31a, the slit-shaped first divided portions 37 are formed. Since the plurality of strip-shaped substrates 31b are connected to the unnecessary region portion 31a, the sheet state is exhibited.
[0036]
Next, as shown in FIGS. 9A and 10A, a part of the back surface of the substrate 31 is formed from the back surface side of the sheet-like substrate 31 by a sputtering method using a mask (not shown). Plural pairs of Cr thin films having good adhesion to the substrate 31 constituting part of the side electrode 38 on the end surface of the substrate 31 and the end surface of the upper surface electrode layer 32 on the inner surface of the plurality of slit-shaped first division parts 37. The first thin film 39 is formed in a substantially L shape.
[0037]
Next, as shown in FIGS. 9B and 10B, a plurality of pairs of first thin films 39 are formed from the back side of the sheet-like substrate 31 by a sputtering method using a mask (not shown). A plurality of pairs of second thin films 40 made of a Cu—Ni alloy thin film constituting a part of the side electrode 38 are formed in a substantially L shape so as to overlap with each other.
[0038]
Next, as shown in FIGS. 2, 11 (a), 11 (b), 12 (a) and 12 (b), the unnecessary region portion 31 a formed at the end of the entire periphery of the sheet-like substrate 31 is excluded. A direction orthogonal to the slit-shaped first dividing portion 37 so that the plurality of resistors 33 are individually separated into the plurality of strip-shaped substrates 31b in the sheet-like substrate 31 and divided into the piece-like substrates 31c. A plurality of second divided portions 41 are formed. In this case, since the plurality of second divided portions 41 are formed at a pitch of 400 μm, the width of the second divided portions 41 is 100 μm. The plurality of second dividing portions 41 are formed by laser scribing. First, as shown in FIGS. 11A and 12A, dividing grooves are formed by laser, and then FIG. (B) As shown in FIG. 12 (b), the division groove portion is divided by a general division facility so as to be divided into the piece-like substrates 31c. In other words, this dividing method has the effect that it is not divided into pieces each time the second divided portion 41 is formed, but is divided into two stages. Further, since the plurality of second divided portions 41 are formed by laser scribing on the plurality of strip-shaped substrates 31b except for the unnecessary region portion 31a, each time the plurality of second divided portions 41 are formed. The substrate is divided into individual substrates 31c, and the individual substrates 31c are separated from the unnecessary region portion 31a.
[0039]
Next, as shown in FIG. 13A and FIG. 14A, the second thin film 40 constituting a part of the side electrode 38 is covered and exposed by using an electroplating method. A first plating film 42 made of nickel plating having a thickness of about 2 to 6 μm and excellent solder diffusion prevention or heat resistance is formed so as to cover the upper surface of the layer 32.
[0040]
Finally, as shown in FIGS. 13 (b) and 14 (b), the thickness is about 3 to 8 μm so as to cover the first plating film 42 made of nickel plating by using an electroplating method, and A second plating film 43 made of tin plating with good solder adhesion is formed.
[0041]
The resistor in one embodiment of the present invention is manufactured by the above manufacturing process.
[0042]
In addition, in the said manufacturing process, although the 2nd plating film 43 is comprised by tin plating, it is not limited to this, The plating which consists of a tin alloy type material, for example, a solder etc., may be sufficient. In the case of using the material, stable soldering can be performed during reflow soldering.
[0043]
Further, in the above manufacturing process, the protective layer covering the resistor 33 and the like, the first protective layer 34 mainly composed of glass covering the resistor 33, the first protective layer 34 and the trimming groove 35 are formed. Since it is composed of two layers of the second protective layer 36 mainly composed of the resin to be covered, the first protective layer 34 can prevent generation of cracks during laser trimming and reduce current noise. Since the entire resistor 33 is covered with the second protective layer 36 containing a resin as a main component, it is possible to ensure resistance characteristics with excellent moisture resistance.
[0044]
In the resistor manufactured by the above manufacturing process, the distance between the slit-shaped first divided portion 37 formed by the dicing method and the second divided portion 41 formed by laser scribing is accurate (within ± 0.005 mm). ) And the thicknesses of the first thin film 39 and the second thin film 40 and the thicknesses of the first plating film 42 and the second plating film 43 constituting the side electrode 38 are also accurate. The total length and width of the vessel are exactly 0.6 mm long × 0.3 mm wide. Further, the pattern accuracy of the upper electrode layer 32 and the resistor 33 is not required to be classified into the dimension ranks of the individual substrates, and it is not necessary to consider the variation in dimensions within the dimension rank of the same individual substrate. The effective area 33 can be made larger than that of the conventional product. That is, the resistor in the conventional product has a length of about 0.20 mm × width of 0.19 mm, whereas the resistor 33 of the resistor in one embodiment of the present invention has a length of about 0.25 mm × width 0. .24 mm and the area is about 1.6 times or more.
[0045]
Furthermore, in the above manufacturing process, since the plurality of slit-shaped first divided portions 37 are formed by using a dicing method, and the sheet-like substrate 31 that does not require dimensional classification of the individual substrate is used, Thus, the size classification of the individual substrate is not necessary, thereby eliminating the complexity of the process, and dicing can be easily performed using a general dicing equipment such as a semiconductor. .
[0046]
Furthermore, in the above manufacturing process, the sheet-like substrate 31 forms an unnecessary region portion 31a that does not eventually become a product at the end of the entire periphery, and the plurality of slit-shaped first division portions 37 include a plurality of slits. Since the strip-shaped substrate 31b is formed on the sheet-shaped substrate 31 so as to be connected to the unnecessary region portion 31a, a plurality of strip-shaped substrates are formed even after the plurality of slit-shaped first divided portions 37 are formed. The substrate 31b is connected to the unnecessary region portion 31a. Therefore, the sheet-like substrate 31 is not finely separated into a plurality of strip-like substrates 31b. Therefore, the plurality of slit-shaped first division portions 37 are not separated. Even after the formation, the post-process can be performed in the state of the sheet-like substrate 31 having the unnecessary region portion 31a, so that the design of the construction method can be simplified.
[0047]
In the manufacturing process, the first thin film 39 and the second thin film 40 constituting the side electrode 38 are formed by a sputtering method using a mask (not shown). However, the present invention is not limited to this. Without using the mask (not shown), a thin film is formed on the entire back surface of the sheet-like substrate, and then an unnecessary portion of the thin film formed on the entire back surface, that is, a substantially central portion of the back surface is formed. The back surface portion of the side electrode 38 may be formed by peeling and removing by laser irradiation.
[0048]
Next, the 2nd thin film 40 which comprises a part of side electrode 38 in the said manufacturing process is explained in full detail.
[0049]
The material of the second thin film 40 is particularly preferably a Cu—Ni alloy thin film among Cu-based alloy thin films.
[0050]
The Cu—Ni alloy thin film constitutes a “full solid solution” in which Ni as an additive material is uniformly mixed with Cu as the main element of the alloy thin film and the first thin film 39 at a total composition ratio (range) of Cu. . Therefore, Ni diffuses at the interface between the second thin film 40 and the first thin film 39 made of a Cu—Ni alloy thin film, thereby forming a strong adhesion layer. Improvement can be achieved. Further, Ni present on the outermost surface of the second thin film 40 is an effect of enhancing the corrosion resistance with respect to the surface of the second thin film 40 in a plating bath for forming nickel plating used for the first plating film 42. Therefore, the adhesion at the interface between the first plating film 42 and the second thin film 40 can also be improved.
[0051]
Here, the “full solid solution” in one embodiment of the present invention is as shown in the equilibrium diagram of the Cu—Ni alloy thin film constituting the second thin film shown in FIG. In FIG. 15, when the amount of Ni metal added is plotted on the horizontal axis and the temperature is plotted on the vertical axis, the liquid phase is at a temperature higher than the liquidus indicated by the solid line, and the solid phase is obtained at a temperature lower than the solidus indicated by the dotted line. The region surrounded by the solid line and the dotted line is a state in which the solid phase and the liquid phase are mixed, that is, the “total solid solution”. That is, the second thin film 40 made of a Cu—Ni alloy thin film according to one embodiment of the present invention has a Ni metal having a crystal structure of the same face-centered cubic lattice in the Cu metal of the face-centered cubic lattice that is the base metal. A substitutional solid solution having a face-centered cubic lattice structure, which is a single phase, is formed over the entire structure range.
[0052]
FIG. 16 shows the result of SIMS composition analysis of the first thin film 39 made of a Cr thin film and the second thin film 40 made of a Cu—Ni alloy thin film. The amount of Ni added to the second thin film 40 at this time is 6.2 wt%. In FIG. 16, the horizontal axis indicates the film thickness from the surface of the Cu—Ni alloy thin film in terms of sputtering time, and the vertical axis indicates the number of atoms such as Cu, Ni, Cr, etc. in each layer. As is apparent from FIG. 16, although there is a diffusion layer in which Cu, Ni and Cr are present at the interface between the Cu—Ni alloy thin film layer and the Cr thin film layer, the Cr thin film is formed from the surface of the Cu—Ni alloy thin film layer. The Ni metal is uniformly present in the Cu metal up to the interface with the layer. This indicates that the second thin film 40 made of a Cu—Ni alloy thin film is an “all solid solution” in which Ni metal is completely dissolved in Cu metal to form one phase. In FIG. 16, the Ni addition amount is 6.2 wt%, but the Ni addition amount is the same as that shown in FIG. 16 in the entire composition range.
[0053]
Next, the characteristics using the Cu—Ni alloy thin film as the second thin film 40 in the resistor according to the embodiment of the present invention configured as described above will be described.
[0054]
As a test method for explaining the characteristics, the test was carried out by the method prescribed in “Plating adhesion test method / JIS H8504C”. As shown in FIGS. 17 (a) and 17 (b), An adhesive tape 44 having a width of 18 mm defined in “Tape / JIS Z 1522” was used. At this time, the peeling direction of the adhesive tape 44 was set to be perpendicular or inclined with respect to the alumina substrate 45 as shown in FIGS. 17A and 17B described in “JIS H 8504”.
[0055]
That is, in this test method, an alumina substrate 45 is used as a test piece, a Cr thin film is formed as a first thin film 39 on a side surface portion of the alumina substrate 45 by a sputtering method, and then on the first thin film 39, Similarly to the first thin film 39, a Cu—Ni alloy thin film is formed as the second thin film 40 by a sputtering method. Thereafter, a pattern having a pattern width of 0.3 mm is formed using a laser.
[0056]
Thereafter, an acceleration test is performed at a temperature of 65 ° C. and a humidity of 95%. Next, after the adhesive tape 44 is brought into close contact with the surface of the second thin film 40, the adhesive tape 44 is peeled off at a stretch to obtain the total number of patterns. On the other hand, the ratio of the number of patterns from which the second thin film 40 was peeled was obtained, and the adhesion was evaluated.
[0057]
For the test piece for evaluating the adhesion at the interface between the first plating film 42 and the second thin film 40, after the second thin film 40 is formed, the first plating film 42 is further plated with nickel, and further the second As the plating film 43, a solder plating formed by electrolytic plating was used.
[0058]
Evaluation was performed for the case where the amount of Ni added in the Cu—Ni alloy thin film was “1.6 wt%”, “6.2 wt%”, and “12.6 wt%” and the case where the Ni addition amount was “0 wt%”. It was.
[0059]
(Table 1) shows the evaluation result of the peeling rate at the interface between the second thin film 40 and the first thin film 39 after 500 hours of the acceleration test.
[0060]
[Table 1]

[0061]
As is clear from Table 1, the adhesion at the interface between the second thin film 40 and the first thin film 39 is greatly improved by adding Ni to the Cu thin film.
[0062]
(Table 2) shows the evaluation results of the peeling rate at the interface between the first plating film 42 and the second thin film 40 after 500 hours of the acceleration test.
[0063]
[Table 2]

[0064]
As is clear from Table 2, the adhesion at the interface between the first plating film 42 and the second thin film 40 is greatly improved by adding Ni to the Cu thin film.
[0065]
In the above-described embodiment of the present invention, the first thin film 39 and the second thin film 40 are formed by using the sputtering method. However, the present invention is not limited to this sputtering method. Even when the first thin film 39 and the second thin film 40 are formed by a thin film technique such as a vacuum deposition method, an ion plating method, or P-CVD, which is the construction method of the present invention, the same effects as those of the embodiment of the present invention are obtained. Is obtained.
[0066]
In the embodiment of the present invention, the first thin film 39 is formed of a Cr thin film. However, the present invention is not limited to this Cr thin film, and other Cr having good adhesion to the substrate. Even when the first thin film 39 is formed of a material such as a Si alloy thin film, a Ni—Cr alloy thin film, a Ti thin film, or a Ti-based alloy thin film, the same effect as that of the embodiment of the present invention can be obtained. is there.
[0067]
In the above-described embodiment of the present invention, an unnecessary region portion 31a that will not eventually become a product is formed at the end of the entire circumference of the sheet-like substrate 31 and configured in a substantially square shape. However, the unnecessary region portion 31a is not necessarily formed at the end portion of the entire periphery of the sheet-like substrate 31. For example, the unnecessary region portion 31d is provided at one end portion of the sheet-like substrate 31 as shown in FIG. In the case of forming the unnecessary region portion 31e at both ends of the sheet-like substrate 31 as shown in FIG. 19, the unnecessary region portion 31f is formed at the three ends of the sheet-like substrate 31 as shown in FIG. Even when formed, the same effects as those of the embodiment of the present invention can be obtained.
[0068]
Furthermore, in the above-described embodiment of the present invention, the case where the plurality of second divided portions 41 are formed by laser scribing has been described, but the second divided portion 41 is a slit-shaped first divided portion 37. It may be formed using a dicing method in the same manner as described above. In this case, dicing can be easily performed using a general dicing equipment such as a semiconductor.
[0069]
As described above, in one embodiment of the present invention, as shown in FIG. 1, a substrate 11, a resistor 13 provided on one main surface (upper surface) of the substrate 11, and at least the resistor 13 are provided. A first protective film 15 and a second protective film 17 provided so as to cover; a pair of upper surface electrodes 12 are provided on one main surface (upper surface) of the substrate 11; and between the pair of upper surface electrodes 12 A resistor 13 is provided on the substrate 11, and a pair of side electrodes 14 are provided on the edge of the substrate 11 so as to be electrically connected to the upper surface electrode 12. The side electrodes 14 are provided on the substrate. A first thin film 18 made of a Cr thin film, a Ti thin film, a Cr-based alloy thin film, a Ti-based alloy thin film, or a NiCr alloy thin film, which has good adhesion to the substrate 11 formed sequentially from the edge side of 11, and the first thin film Cu system electrically connected to 18 A composite of a second thin film 19 made of an alloy thin film, a first plating film 20 made of Ni plating covering at least the second thin film 19, and a second plating film 21 covering at least the first plating film 20. Since the layer structure is used, the additive metal constituting the Cu-based alloy thin film and the constituent metal of the first thin film 18 constitute a complete solid solution of the first thin film 18 at the interface with the second thin film 19. As a result, the effect of improving the adhesion between the first thin film 18 and the second thin film 19 is obtained.
[0070]
The second thin film 19 constituting the side electrode 14 is composed of a Cu—Ni alloy thin film containing 1.6% by weight or more of Ni in Cu. The constituent metal of the thin film 18 constitutes a complete solid solution, whereby the effect of improving the adhesion between the first thin film 18 and the second thin film 19 is obtained.
[0071]
Further, the first thin film 18 and the second thin film 19 constituting the side electrode 14 are substantially L-shaped from the back surface to the side surface of the substrate 11, and therefore the first thin film 18 and the second thin film 19. Can be easily formed from only the back surface side of the substrate 11 toward the upper surface side of the substrate 11, thereby improving the productivity.
[0072]
【The invention's effect】
As described above, the resistor of the present invention includes a pair of substantially U-shaped side electrodes provided on the edge of the substrate so as to be electrically connected to the pair of upper surface electrodes, the first thin film, And a second thin film electrically connected to the first thin film is composed of a Cu-based alloy thin film. Therefore, at the interface between the first thin film and the second thin film, the additive metal constituting the Cu-based alloy thin film and the constituent metal of the first thin film constitute a complete solid solution. As a result, the adhesion between the first thin film and the second thin film is improved and the reliability can be increased.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a resistor according to an embodiment of the present invention.
FIG. 2 is a top view showing a state in which an unnecessary region is formed at an end of the entire periphery of a sheet-like substrate used when manufacturing the resistor.
FIGS. 3A and 3B are cross-sectional views showing manufacturing steps of the resistor.
FIGS. 4A and 4B are plan views showing manufacturing steps of the resistor.
FIGS. 5A and 5B are cross-sectional views showing manufacturing steps of the resistor.
FIGS. 6A and 6B are plan views showing manufacturing steps of the resistor.
FIGS. 7A and 7B are cross-sectional views showing manufacturing steps of the resistor.
FIGS. 8A and 8B are plan views showing manufacturing steps of the resistor.
FIGS. 9A and 9B are cross-sectional views showing manufacturing steps of the resistor.
FIGS. 10A and 10B are plan views showing manufacturing steps of the resistor.
FIGS. 11A and 11B are cross-sectional views showing a manufacturing process of the resistor.
FIGS. 12A and 12B are plan views showing manufacturing steps of the resistor.
FIGS. 13A and 13B are cross-sectional views showing manufacturing steps of the resistor.
FIGS. 14A and 14B are plan views showing manufacturing steps of the resistor.
FIG. 15 is an equilibrium diagram of a Cu—Ni alloy thin film constituting the second thin film of the resistor.
FIG. 16 is an explanatory diagram of a composition analysis result by SIMS of the first thin film and the second thin film of the resistor;
FIGS. 17A and 17B are diagrams showing test methods for explaining characteristics;
FIG. 18 is a top view showing a state in which an unnecessary region is formed at one end of a sheet-like substrate used when manufacturing the resistor.
FIG. 19 is a top view showing a state in which unnecessary regions are formed at both ends of a sheet-like substrate used in manufacturing the resistor.
FIG. 20 is a top view showing a state in which unnecessary regions are formed at three end portions of a sheet-like substrate used in manufacturing the resistor.
FIG. 21 is a sectional view of a conventional resistor.
[Explanation of symbols]
11 Substrate
12 Top electrode
13 resistors
14 Side electrode
15 First protective layer
16 Trimming groove
17 Second protective layer
18 First thin film
19 Second thin film
20 First plating film
21 Second plating film
31 Sheet substrate
31a, 31d to 31f Unnecessary area
31b Strip substrate
31c piece substrate
32 Top electrode layer
33 resistors
34 First protective layer
35 Trimming groove
36 Second protective layer
37 First division
38 Side electrode
39 First thin film
40 Second thin film
41 2nd division part
42 1st plating film
43 Second plating film

Claims

A substrate, a pair of upper surface electrodes formed on one main surface of the substrate, a resistor provided so as to be electrically connected to the pair of upper surface electrodes, and a protection provided so as to cover at least the resistor A pair of substantially U-shaped side electrodes provided on the edge of the substrate so as to be electrically connected to the pair of upper surface electrodes, and the side electrode is positioned on the edge side of the substrate. And a first thin film made of any one of a Cr thin film, a Ti thin film, a Cr-based alloy thin film, and a Ti-based alloy thin film having good adhesion to the substrate, and a Cu-based electrically connected to the first thin film. A multilayer structure of a second thin film made of an alloy thin film, a first plated film made of nickel plating covering at least the second thin film, and a second plated film covering at least the first plated film Resistor.

The resistor according to claim 1, wherein the second thin film constituting the side electrode is formed of a Cu—Ni alloy thin film containing Cu in an amount of 1.6 wt% or more.

The resistor according to claim 1, wherein the first thin film and the second thin film constituting the side electrode are formed in an approximately L shape from the back surface to the side surface of the substrate.

A step of providing a plurality of pairs of upper surface electrode layers on the upper surface of the sheet-like substrate; a step of providing a plurality of resistors electrically connected to the plurality of pairs of upper surface electrode layers; and covering at least the plurality of resistors Providing a plurality of protective layers on the substrate, trimming to correct a resistance value between the plurality of pairs of upper surface electrode layers in the plurality of resistors, and forming the plurality of pairs of upper surface electrodes on the sheet-like substrate. A step of forming a plurality of slit-shaped first divided portions for separating a layer into a plurality of strip-shaped substrates, and a sheet-shaped substrate in which a plurality of the slit-shaped first divided portions are formed Forming a side electrode on the side surface of the substrate on the inner surface of the plurality of slit-shaped first divided portions and the side surface of the upper surface electrode layer by a thin film technique from the back surface side, and a plurality of strip-shaped substrates on the sheet-shaped substrate And the compound Forming a plurality of second divided parts in a direction orthogonal to the slit-shaped first divided parts so that the resistors are individually separated and divided into individual pieces. Manufacturing method.

The method for manufacturing a resistor according to claim 4, wherein the plurality of slit-shaped first divided portions are formed by dicing.

The method for manufacturing a resistor according to claim 4, wherein the plurality of second divided portions are formed by dicing.

5. The method of manufacturing a resistor according to claim 4, wherein the plurality of second divided portions are formed by a laser, and then the second divided portion is divided and divided into a piece-like substrate.

An unnecessary area portion is formed at an end of the sheet-like substrate, and the plurality of slit-shaped first divided portions are formed on the sheet-like substrate so that the plurality of strip-shaped substrates are connected to the unnecessary area portion. The manufacturing method of the resistor of Claim 4 formed.

A step of providing a plurality of pairs of upper surface electrode layers on the upper surface of the sheet-like substrate, a step of providing a plurality of resistors electrically connected to the plurality of pairs of upper surface electrode layers, and covering the plurality of resistors Providing a plurality of first protective layers mainly composed of glass, trimming to correct resistance values between the plurality of upper surface electrode layers in the plurality of resistors, and at least the glass A step of providing a plurality of second protective layers made of a resin layer so as to cover the plurality of first protective layers as a main component; and separating the plurality of pairs of upper surface electrode layers on the sheet-like substrate. A step of forming a plurality of slit-shaped first divided portions for dividing the strip-shaped substrate, and a thin film technology from the back side of the sheet-shaped substrate in a state where a plurality of the slit-shaped first divided portions are formed. A plurality of slit-shaped first minutes Forming a side electrode on the side surface of the substrate on the inner surface of the portion and the side surface of the upper surface electrode layer, and a plurality of strip-shaped substrates on the sheet-shaped substrate, the plurality of resistors being individually separated into individual pieces Forming a plurality of second divided portions in a direction orthogonal to the slit-shaped first divided portions so as to be divided into substrates.

A first thin film made of any one of a Cr thin film, a Ti thin film, a Cr-based alloy thin film, and a Ti-based alloy thin film that is located on the edge side of the substrate and has good adhesion to the substrate; A second thin film made of a Cu-based alloy thin film electrically connected to the thin film; a first plating film made of nickel plating covering at least the second thin film; and a first thin film covering at least the first plating film. The first thin film and the second thin film are composed of a multilayer structure of two plating films, and the thin film technology is applied from the back side of the sheet-like substrate in which a plurality of slit-shaped first division parts are formed. Are formed on the side surface of the substrate and the side surface of the upper electrode layer on the inner surface of the plurality of slit-shaped first division parts, and the first plating film and the second plating film are further divided by the second division part. Covering the second thin film on the individual piece substrate Method for producing a resistor according to claim 9, wherein provided in earthenware pots.

The method for manufacturing a resistor according to claim 9, wherein the plurality of slit-shaped first divided portions are formed by dicing.

The method for manufacturing a resistor according to claim 9, wherein the plurality of second divided portions are formed by dicing.

The method of manufacturing a resistor according to claim 9, wherein the plurality of second divided portions are formed by a laser, and thereafter, the second divided portions are divided into piece-like substrates.

An unnecessary area portion is formed at an end of the sheet-like substrate, and the plurality of slit-shaped first divided portions are formed on the sheet-like substrate so that the plurality of strip-shaped substrates are connected to the unnecessary area portion. The method of manufacturing a resistor according to claim 9 formed.