JP4430165B2 - Vacuum thin film forming apparatus and vacuum thin film forming method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a vacuum thin film forming apparatus and a vacuum thin film forming method for forming a thin film on a long substrate in a vacuum.
[0002]
[Prior art]
As a vacuum thin film formation method for forming a thin film on a long organic substrate in a vacuum, the long organic substrate is continuously fed into a film forming chamber, a thin film is formed by vacuum deposition, and then the long organic substrate is The method of rewinding is common. The long organic base material used here includes a film in which an organic polymer is formed on a metal foil, a polymer film, and the like.
[0003]
FIG. 2 is a schematic view showing a configuration example of a conventional vacuum thin film forming apparatus used in such a vacuum thin film forming method.
[0004]
In the conventional vacuum thin film forming apparatus 50 shown in FIG. 2, a cooling roll 69 is provided in the vacuum chamber 51. The inside of the vacuum chamber 51 is divided into a storage chamber 57 and a film formation chamber 58 by a partition wall 56 around a cooling roll 69. The partition wall 56 extends from the partition wall inside the vacuum chamber 51 to the vicinity of the cooling roll 69. A gap is provided between the partition wall 56 and the cooling roll 69, and the long organic base material 55 described later passes through the gap provided between the partition wall 56 and the cooling roll 69. The storage chamber 57 and the film formation chamber 58 are shielded from each other by the partition wall 56 and the cooling roll 69 except for this gap.
[0005]
In the storage chamber 57, a feed roll 59, feed-side guide rolls 60, 61, 62, take-up side guide rolls 63, 64, and a take-up roll 65 are provided.
[0006]
The feed roll 59 is loaded with a roll around which the long organic base material 55 is wound. The long organic base material 55 is guided to the outer peripheral surface of the cooling roll 69 by the guide rolls 60 to 62 on the feeding side, is further guided by the guide rolls 63 and 64 on the winding side, and is wound on the winding roll 65. .
[0007]
A plasma electrode 66 is disposed between the guide rolls 60 and 61 so as to face the long organic base material 55. A high frequency power source 68 is connected to the plasma electrode 66 through a matching circuit 67.
[0008]
Three magnetron sputtering electrodes 70, 71, 72 are arranged in the film forming chamber 58 so as to face the cooling roll 69. DC power supplies 73, 74, and 75 are connected to the magnetron sputtering electrodes 70, 71, and 72, respectively. Each of the magnetron sputter electrodes 70 to 72 is provided with a target made of a predetermined material.
[0009]
The inside of the vacuum chamber 51 is kept in a vacuum state by an exhaust pump (not shown).
[0010]
In the vacuum chamber 51, the long organic base material 55 is caused to travel at a constant speed by a feed roll 59, a take-up roll 65 and a cooling roll 69. The long organic base material 55 fed from the feed roll 59 is guided by the guide rolls 60 to 62 and supplied to the film forming chamber 58. On the other hand, a high frequency voltage is applied to the plasma electrode 66 from the high frequency power source 68 via the matching circuit 67. As a result, glow discharge occurs, and a plasma treatment is performed on the long organic base material 55 stretched between the guide roll 60 and the guide roll 61.
[0011]
The long organic base material 55 subjected to the plasma treatment is guided by the guide roll 62 and reaches the cooling roll 69. The long organic base material 55 that has reached the cooling roll 69 first faces the magnetron sputtering electrode 70. The target disposed on the magnetron sputter electrode 70 is sputtered by ions in accordance with the DC power supplied from the DC power source 73, and the target material is deposited on the long organic substrate 55. The long organic substrate 55 sequentially moves to a position facing the magnetron sputter electrode 71 and the magnetron sputter electrode 72 as the cooling roll 69 rotates. In accordance with the DC power supplied from the DC power supplies 74 and 75 to the magnetron sputter electrodes 71 and 72, the targets arranged on the magnetron sputter electrodes 71 and 72 are sputtered by ions, and the target material is a long organic base material. 55 is deposited.
[0012]
In this way, the long organic base material 55 in which the thin film is formed by the magnetron sputtering electrodes 71, 72, 73 in the film forming chamber 58 is guided from the cooling roll 69 to the guide rolls 63, 64 to the take-up roll 65. It is wound up.
[0013]
In this vacuum thin film forming apparatus, since the long organic base material 55 passes through the glow discharge atmosphere generated by the plasma electrode 66, the surface of the long organic base material 55 is subjected to plasma treatment. The adhesion between the thin film deposited at 58 and the long organic substrate 55 is improved.
[0014]
[Problems to be solved by the invention]
In the conventional vacuum thin film forming apparatus, when the long organic base material 55 is made of an organic material whose adhesion is relatively easy to improve, the plasma by the plasma electrode 66 of the plasma processing system 53 in the storage chamber 57 is obtained. The treatment and the formation of the thin film by the magnetron sputter electrodes 70 to 72 in the film formation chamber 58 can be performed simultaneously.
[0015]
However, when the long organic base material 55 is made of an organic material in which strong adhesion is difficult to obtain, for example, when a metal thin film is formed on the surface of a polyimide polymer, the thin film formed by the magnetron sputter electrodes 70 to 72 is used. It is necessary to lengthen the plasma processing time by the plasma electrode 66 as compared with the formation speed of the plasma. Therefore, it becomes difficult to match the thin film formation time by the magnetron sputtering electrodes 70 to 72 and the plasma processing time by the plasma electrode 66. Therefore, plasma treatment and metal thin film formation are performed separately.
[0016]
Therefore, for example, by generating plasma in a wide range by the plasma electrode 66 and increasing the distance that the long organic substrate 55 travels in the plasma, the moving speed of the long organic substrate 55 in the storage chamber 57 is slowed down. It is conceivable to lengthen the plasma processing time of the long organic base material 55 without doing so. However, in that case, the vacuum thin film forming apparatus 50 becomes large and expensive.
[0017]
Conversely, it is conceivable to increase the metal thin film formation time by the magnetron sputter electrodes 70 to 72 by lowering the deposition rate. However, in this case, productivity is reduced and production cost is increased.
[0018]
In addition, when a multilayer film is formed by winding a long organic substrate at a time with a general thin film forming apparatus, a plurality of evaporations are formed in a film forming chamber in vacuum deposition in order to form a plurality of thin films. It is necessary to prepare a source, and it is necessary to prepare a plurality of targets in sputter deposition. In vacuum deposition, if a plurality of evaporation sources that perform resistance heating or electron beam heating are used, the apparatus becomes large and very expensive. On the other hand, in the case of sputter deposition, for example, as shown in FIG. 2, the sputter electrodes 70 and 72 and the target can be installed obliquely, so that it is possible to form a multilayer film without enlarging the apparatus as much as vacuum deposition.
[0019]
However, in the conventional vacuum thin film forming apparatus 50, for example, when forming a multilayer film including a metal oxide layer and a metal layer, if both are sputter-deposited in one winding of the long organic base material 55, the following is performed. Trouble occurs. For example, when film formation is performed simultaneously using a metal target and a metal oxide target in argon gas, it is necessary to perform high-frequency sputtering for the metal oxide target. In this case, the deposition rate of the metal oxide is so slow that the productivity is deteriorated.
[0020]
On the other hand, when a metal oxide layer is deposited by reactive sputtering using a metal target, the deposition rate of the metal oxide can be improved. However, metal deposition is performed in an argon atmosphere, and it is necessary to add oxygen gas to the atmosphere gas when depositing metal oxide, so that it is not possible to form a metal and a metal oxide at the same time.
[0021]
An object of the present invention is to provide a vacuum thin film forming apparatus and a vacuum thin film forming method capable of forming a thin film on a long base material at high speed and at low cost.
[0022]
[Means for Solving the Problems and Effects of the Invention]
  A vacuum thin film forming apparatus according to a first invention is a vacuum thin film forming apparatus for forming a thin film on a long base material, and is provided in a first chamber and a vacuum chamber divided into a first chamber and a second chamber. The long base material is continuously fed out and wound up to convey the long base material from the first chamber to the first chamber again via the second chamber, and is transported by the transport means in the first chamber. A first sputter electrode provided to face the long base material, a portion of the long substrate facing the first sputter electrode and the first sputter electrode in the first chamber, and the long substrate A first processing chamber having a slit through which the gas passes, a first exhaust means for exhausting the first chamber, a first gas introducing means for introducing a first gas into the first processing chamber, and a second A thin film forming means for forming a thin film on a long base material provided in the room; A second exhaust means for performing a second gas introducing means for introducing a second gas into the second chamberA second sputter electrode provided to face the long base material transported by the transport means in the first chamber, a portion of the long substrate facing the second sputter electrode in the first chamber, and the second A second processing chamber having a slit through which the long substrate passes, and a third gas introducing unit for introducing a third gas into the second processing chamber, A first roll provided in the first chamber; a second roll provided in the first chamber; and a third roll provided to face the second chamber; The long base material that is continuously drawn out is guided to the outer peripheral surface of the third roll and continuously wound up by the second roll, or the long base material that is continuously drawn out from the second roll is the first base material. 3 is guided by the outer peripheral surface of the roll 3 and continuously by the first roll. A long substrate in which the first roll, the second roll, and the third roll are driven so that the first sputter electrode is conveyed between the first roll and the third roll so as to be scraped off. The second sputtering electrode is arranged to face the portion of the long substrate conveyed between the second roll and the third roll.Is.
[0023]
  In the vacuum thin film forming apparatus according to the present invention, the long base material is opposed to the long base material that is continuously transported again from the first chamber to the first chamber by the transport means via the second chamber. Since the first sputter electrode performs a treatment such as plasma treatment or sputter deposition in the first chamber, and a thin film is formed in the second chamber on the long base material subjected to the treatment such as plasma treatment or sputter deposition. Processing such as plasma processing or sputter deposition performed in the first chamber can be completed in a time equivalent to the film formation time normally required for thin film formation performed in the second chamber, and the film formation time in the vacuum thin film forming apparatus can be shortened. Can do. In addition, since the first sputter electrode is arranged in the first chamber provided with the transfer means, not in the second chamber in which the thin film is formed, it is not necessary to increase the size of the apparatus, and the vacuum thin film forming apparatus can be made inexpensive. Can be provided.
  Furthermore, a process that must be performed in different atmospheres, for example, a plasma process performed in a nitrogen gas and a thin film formation performed in an argon gas can be performed separately in the first chamber and the second chamber. The versatility of the vacuum thin film forming apparatus is improved. In addition, it is possible to simultaneously perform processing that must be performed in different atmospheres without destroying the atmosphere when the transport unit is transporting, and the film formation time can be shortened.
  In addition, the treatment performed using the first sputter electrode, the thin film formation in the second chamber, and the treatment performed using the second sputter electrode can be performed in an atmosphere formed independently of each other, and in different atmospheres. The processing that must be performed at the same time can be performed simultaneously when the transport means is transporting the long base material, and the film formation time can be shortened.
[0024]
  Further, the thin film forming means includes at least one first substrate disposed so as to face the long base material conveyed by the conveying means in the second chamber.3It is preferable that the sputter electrode is included. In this case, for example3The sputter electrodes of the second chamber can be arranged diagonally.3The degree of freedom of the layout of the sputtering electrodes is large, and the vacuum thin film forming apparatus can be easily downsized.
[0027]
The third sputter electrode is preferably a magnetron sputter electrode. In this case, for example, when performing plasma treatment or sputter deposition using the third sputter electrode, the speed of the treatment can be improved.
[0028]
The second sputter electrode is preferably a magnetron sputter electrode. In this case, the film formation time required for forming the thin film using the second sputter electrode can be shortened.
[0031]
The first sputter electrode is preferably a magnetron sputter electrode. In this case, when the plasma processing is performed with the first sputter electrode, the plasma processing speed can be improved, and when the thin film is formed with the first sputter electrode, the thin film formation speed can be improved.
[0032]
Moreover, it is preferable that a conveyance means can convey a elongate base material bidirectionally. In this case, the long base material can be reciprocated between the first chamber and the second chamber without destroying the atmosphere in the vacuum chamber, and after forming a thin film in the second chamber on the long base material, This saves the trouble of re-loading the long base material when the thin base material has to be wound up and the thin film must be formed again in the second chamber or when the thin film has to be formed by reciprocating the second chamber. The film formation time can be shortened.
[0035]
  First2In the vacuum thin film forming method according to the invention, the long base material is transferred again from the first chamber to the first chamber through the second chamber in the vacuum chamber divided into the first chamber and the second chamber. A vacuum thin film forming method for forming a thin film on a long base material, wherein the vacuum chamber is transported in a first chamber and a sputter electrode provided to face the long base material transported in the first chamber. And a processing chamber having a slit through which the long substrate passes and a portion of the long substrate facing the sputter electrode, the vacuum thin film forming method exhausts the first chamber and the second chamber. A step of introducing a first gas into the processing chamber after evacuation, a step of introducing a second gas into the second chamber after evacuation, and a sputter electrode on a long substrate conveyed in the processing chamber. Forming the first thin film and carrying it in the second chamber Which was a step of forming a second thin film on the first film of the long substrate being.
[0036]
  In the vacuum thin film forming method according to the present invention, the first thin film is formed in a certain atmosphere by the first sputter electrode on the conveyed long base material, and then the first thin film is formed in the second chamber. The second thin film is formed in an atmosphere different from the atmosphere of the sputtering electrode. In this case, the first and second thin films that must be formed in different atmospheres can be simultaneously formed on the transported long base material, and can be efficiently formed in a short film formation time. .
  Furthermore, the first and second thin film formations that must be performed in different atmospheres can be performed separately in the first chamber and the second chamber, and the use of the vacuum thin film forming apparatus is widened and the versatility of the vacuum thin film forming apparatus is increased. improves. In addition, it is possible to simultaneously perform processing that must be performed in different atmospheres without destroying the atmosphere when the transport unit is transporting, and the film formation time can be shortened.
[0037]
  First3In the vacuum thin film forming method according to the invention, the long base material is transferred again from the first chamber to the first chamber through the second chamber in the vacuum chamber divided into the first chamber and the second chamber. A vacuum thin film forming method for forming a thin film on a long base material, wherein the vacuum chamber is transported in a first chamber and a sputter electrode provided to face the long base material transported in the first chamber. And a processing chamber having a slit through which the long substrate passes and a portion of the long substrate facing the sputter electrode, the vacuum thin film forming method exhausts the first chamber and the second chamber. A step of introducing a first gas into the processing chamber after exhausting, a step of introducing a second gas into the second chamber after exhausting, and a first long substrate conveyed in the second chamber. Through the process of forming the thin film and the second chamberThe placeAnd a step of forming a second thin film with a sputter electrode on the first thin film of the long base material being conveyed in the laboratory.
[0038]
  In the vacuum thin film forming method according to the present invention, the first thin film is formed in the second chamber in which a certain atmosphere is formed on the conveyed long base material, and then the first thin film is formed by the first sputter electrode. The second thin film is formed in an atmosphere different from the atmosphere of the two chambers. In this case, a multilayer film including the first and second thin films that must be formed in different atmospheres can be efficiently formed in a short film formation time.
  Furthermore, the first and second thin film formations that must be performed in different atmospheres can be performed separately in the first chamber and the second chamber, and the use of the vacuum thin film forming apparatus is widened and the versatility of the vacuum thin film forming apparatus is increased. improves. In addition, it is possible to simultaneously perform processing that must be performed in different atmospheres without destroying the atmosphere when the transport unit is transporting, and the film formation time can be shortened.
[0039]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a vacuum thin film forming apparatus according to an embodiment of the present invention will be described. FIG. 1 is a schematic diagram illustrating a configuration example of a vacuum thin film forming apparatus according to an embodiment.
[0040]
In the vacuum thin film forming apparatus 1 shown in FIG. 1, a cooling roll 30 is provided in the vacuum chamber 2. The inside of the vacuum chamber 2 is divided into a storage chamber 11 and a film formation chamber 12 by a partition wall 10 around a cooling roll 30. The partition wall 10 extends from the side wall inside the vacuum chamber 2 to the vicinity of the cooling roll 30 and is curved downward so as to face the outer peripheral surface of the cooling roll 30. Thereby, a passage 41 through which a long organic base material 9 described later passes is formed between the cooling roll 30 and the partition wall 10. The storage chamber 11 and the film forming chamber 12 are shielded from each other by the partition wall 10 and the cooling roll 30 except for the passage 41.
[0041]
In the storage chamber 11, a feeding roll 15, feeding-side guide rolls 16, 17, 18, a winding-side guide rolls 19, 20, 21 and a winding roll 22 are provided.
[0042]
A first processing chamber 23 is provided on one side wall in the vacuum chamber 2 between the guide rolls 16 and 17. A magnetron sputtering electrode 25 is disposed in the first processing chamber 23. Slits 23 a and 23 b through which the long organic base material 9 passes are formed on the upper and lower surfaces of the first processing chamber 23.
[0043]
On the other hand, a second processing chamber 37 is provided between the guide rolls 20 and 21 on the other side wall in the vacuum chamber 2. A magnetron sputtering electrode 39 is disposed in the second processing chamber 37. Slits 35 a and 35 b through which the long organic base material 9 passes are formed on the upper and lower surfaces of the second processing chamber 37.
[0044]
The feed roll 15 is loaded with a roll around which the long organic substrate 9 is wound. The long organic base material 9 is first guided by the guide roll 16, passed through the slits 23 a and 23 b of the first processing chamber 23, and guided to the outer peripheral surface of the cooling roll 30 by the guide rolls 17 and 18. 19 and 20, guided by the guide roll 21 through the slits 35 b and 35 a of the second processing chamber 37, and taken up by the take-up roll 22.
[0045]
The storage chamber 11 is connected to an exhaust pump (not shown) via a conductance valve 13. The conductance valve 13 adjusts the exhaust amount in the storage chamber 11. A gas introduction system 24 is connected to the first processing chamber 23. A high-frequency power source 27 or a DC power source 28 is connected to the magnetron sputtering electrode 25 in the first processing chamber 23 via a matching circuit 26. On the other hand, a gas introduction system 38 is connected to the second processing chamber 37. A DC power supply 40 is connected to the magnetron sputtering electrode 39 in the second processing chamber 37.
[0046]
In the film forming chamber 12, three magnetron sputtering electrodes 31, 32 and 33 are arranged so as to face the cooling roll 30. DC power supplies 34, 35, and 36 are connected to the magnetron sputtering electrodes 31, 32, and 33, respectively.
[0047]
The film forming chamber 12 is connected to an exhaust pump (not shown) via a conductance valve 14. The conductance valve 14 adjusts the exhaust amount in the film forming chamber 12. A gas introduction system 29 is connected to the film forming chamber 12.
[0048]
In the present embodiment, the feeding roll 15, the guide rolls 16 to 21, the take-up roll 22 and the cooling roll 30 constitute a conveying means, and the magnetron sputter electrodes 31 to 33 constitute a thin film forming means. The conductance valve 13 and the exhaust pump (not shown) constitute a first exhaust means, and the conductance valve 14 and the exhaust pump (not shown) constitute a second exhaust means. The gas introduction system 24 corresponds to the first gas introduction means, the gas introduction system 29 corresponds to the second gas introduction means, and the gas introduction system 38 corresponds to the third gas introduction means.
[0049]
Next, a first example of a vacuum thin film forming method using the vacuum thin film forming apparatus 1 shown in FIG. 1 will be described.
[0050]
In the first example of the vacuum thin film forming method, the long organic base material 9 is caused to travel at a predetermined speed by the feed roll 15, the cooling roll 30 and the take-up roll 22 in the vacuum chamber 2. During the travel, plasma processing is performed in the storage chamber 11 by the magnetron sputtering electrode 25 in the external processing chamber 23. Further, a thin film is formed on the long organic base material 9 subjected to the plasma treatment by the magnetron sputtering electrodes 31 to 33 in the film forming chamber 12. By performing the plasma treatment with the magnetron sputter electrode 25 in this way, the thin film formation can be speeded up.
[0051]
The above operation will be described in more detail. First, the internal long organic substrate 9 is loaded in the vacuum chamber 2. A matching circuit 26 and a high frequency power source 27 are connected to the magnetron sputtering electrode 25. In this example, a target that is difficult to be sputtered is disposed on the magnetron sputter electrode 25 in the first processing chamber 23. A target is attached on each of the magnetron sputter electrodes 31 to 33. In this example, it is assumed that the magnetron sputtering electrode 39 in the second processing chamber 37 is not used.
[0052]
Thereafter, the vacuum chamber 2 is sealed, and the storage chamber 11 and the film forming chamber 12 of the vacuum chamber 2 are evacuated by an exhaust pump (not shown), and set to a predetermined degree of vacuum. A first gas is introduced from the gas introduction system 24 into the first processing chamber 23. The flow rate of the first gas introduced from the gas introduction system 24 is adjusted, and the exhaust amount is adjusted by the conductance valve 13 to set the pressure of the first gas in the first processing chamber 23. A second gas is introduced from the gas introduction system 29 into the film formation chamber 12, the flow rate of the second gas introduced from the gas introduction system 29 is adjusted, and the exhaust amount is adjusted by the conductance valve 14. The pressure of the second gas is set. Usually, the first gas is, for example, nitrogen gas, and the second gas is, for example, argon gas. At this time, since the pressure in the storage chamber 11 is lower than that in the first processing chamber 23 and the film forming chamber 12, the atmosphere in the first processing chamber 23 and the atmosphere in the film forming chamber 12 are separated from each other. Yes.
[0053]
After the atmosphere in the vacuum chamber 2 is set, the long organic base material 9 is driven by the feed roll 15, the cooling roll 30 and the take-up roll 22 so as to run at a constant speed.
[0054]
The magnetron sputtering electrode 25 is supplied with high frequency power of a predetermined frequency from a high frequency power supply 27 via a matching circuit 29. As a result, glow discharge is generated in the first processing chamber 23, and the long organic base material 9 that is fed from the feed roll 15 and reaches between the guide rolls 16 and 17 travels in the glow discharge atmosphere. . As a result, the long organic base material 9 is subjected to plasma treatment.
[0055]
Thereafter, the long organic base material 9 subjected to the plasma treatment by the magnetron sputtering electrode 25 is sent along the cooling roll 30 into the film forming chamber 12. In the film forming chamber 12, the target attached to the magnetron sputter electrodes 31 to 33 is sputtered by ions, and the target material is deposited on the long organic substrate 9. The deposition rate by each target is controlled by DC power supplied from the DC power sources 34 to 36 to the magnetron sputtering electrodes 31 to 33, respectively.
[0056]
The long organic base material 9 is wound by the winding roll 22 through the second processing chamber 37 after a thin film is formed by the magnetron sputter electrodes 31 to 33 in the film forming chamber 12.
[0057]
In the vacuum thin film forming method as described above, the surface of the long organic base material 9 subjected to the plasma treatment by the magnetron sputter electrode 25 in the storage chamber 11 is not contaminated with new magnetron sputter electrodes 31 to 31 in the film forming chamber 12. Since a thin film is formed by 33, the adhesion reliability between the thin film and the long organic base material 9 can be improved.
[0058]
When the long organic base material 9 is subjected to plasma treatment, it is preferable to use a flat plate as the magnetron sputtering electrode 25. This is because the uniformity of the plasma in the width direction of the long organic substrate can be easily obtained when a flat plate is used, and in particular, the use of a planar magnetron type cathode electrode can increase the density of ions and radicals. This improves the plasma processing efficiency.
[0059]
Further, instead of attaching a target that is difficult to be sputtered to the magnetron sputter electrode 25, the magnetron sputter electrode 25 itself may be formed of a material that is hardly sputtered.
[0060]
Further, the feeding roll 15, the cooling roll 30 and the take-up roll 22 may be capable of driving the long organic base material 9 in both directions.
[0061]
Next, a second example of the vacuum thin film forming method using the vacuum thin film forming apparatus 1 shown in FIG. 1 will be described. In this example, a multilayer film including a metal layer and a metal oxide layer is formed on the long organic substrate 9.
[0062]
In the first example of the vacuum thin film forming method described above, the plasma processing is performed by connecting the matching circuit 26 and the high frequency power source 27 to the magnetron sputter electrode 25. In the second example, the DC power source 28 is applied to the magnetron sputter electrodes 25 and 39. , 38 are connected to form a thin film.
[0063]
In the second example of the vacuum thin film forming method, argon gas is introduced into the first and second processing chambers 23 and 37 by the gas introduction systems 24 and 28, and argon is introduced into the film formation chamber 12 by the gas introduction system 29. A mixed gas of gas and oxygen gas is introduced. In the vacuum chamber 2, the long organic base material 9 is caused to travel at a predetermined speed by the feed roll 15, the cooling roll 30 and the take-up roll 22. During the running, a metal layer is formed by the magnetron sputter electrodes 25 and 39 in the first and second processing chambers 23 and 37 in the storage chamber 12 and reacted by the magnetron sputter electrodes 31 to 33 in the film forming chamber 12. Sputtering is performed to form a metal oxide layer.
[0064]
The above operation will be described in more detail. First, the long organic base material 9 is loaded into the vacuum chamber 2. A DC power supply 28 is connected to the magnetron sputtering electrode 25. In this example, targets are attached to the magnetron sputter electrode 25 in the first processing chamber 23, the magnetron sputter electrodes 31 to 33, and the magnetron sputter electrode 39 in the second processing chamber 37, respectively.
[0065]
Thereafter, the vacuum chamber 2 is sealed, and the storage chamber 11 and the film forming chamber 12 of the vacuum chamber 2 are evacuated by an exhaust pump (not shown), and set to a predetermined degree of vacuum. Then, the first and second gases are introduced into the first and second processing chambers 23 and 37 from the gas introduction systems 24 and 38, respectively. The flow rates of the first and second gases introduced from the gas introduction systems 24 and 38 are adjusted, and the exhaust amount is adjusted by the conductance valve 13, so that the first and second processing chambers 23 and 37 in the first and second processing chambers 23 and 37 are adjusted. The pressure of the second gas is set.
[0066]
In addition, a third gas is introduced from the gas introduction system 29 into the film forming chamber 12, the flow rate of the third gas introduced from the gas introduction system 29 is adjusted, and the exhaust amount is adjusted by the conductance valve 14. The pressure of the third gas in the membrane chamber 12 is set. Usually, the first gas is a gas to which oxygen is not added, for example, and the third gas is a gas to which oxygen is added, for example. At this time, since the pressure in the storage chamber 11 is lower than that in the first and second processing chambers 23 and 37 and the film forming chamber 12, the atmosphere in the first processing chamber 23 and the second processing chamber 37 The atmosphere and the atmosphere of the film forming chamber 12 are separated from each other.
[0067]
After the atmosphere in the vacuum chamber 2 is set, the long organic base material 9 is driven by the feed roll 15, the cooling roll 30 and the take-up roll 22 so as to run at a constant speed. However, it is assumed here that the long organic base material 9 can travel in both directions by the feeding roll 10, the cooling roll 30 and the take-up roll 22.
[0068]
DC power is supplied from the DC power supply 28 to the magnetron sputtering electrode 25. As a result, the target attached to the magnetron sputtering electrode 25 is sputtered from the ions in the first processing chamber 23, and the target organic material is fed from the feeding roll 15 and reaches between the guide rolls 16 and 17. It is deposited on the material 9. Thereby, a first thin film is formed on the long organic base material 9.
[0069]
The long organic base material 9 on which the first thin film is formed by the magnetron sputtering electrode 25 is sent into the film forming chamber 12 along the cooling roll 30. In the film forming chamber 12, the target attached to the magnetron sputter electrodes 31 to 33 is sputtered by ions, and the material of the target is deposited on the first thin film of the long organic base material 9. Thereby, a second thin film is formed on the first thin film of the long organic base material 9.
[0070]
Thereafter, the long organic base material 9 guided by the guide rolls 19 and 20 from the cooling roll 30 and reaching between the guide rolls 20 and 21 has a target attached to the magnetron sputter electrode 39 in the second processing chamber 37. Sputtered by ions, the target material is deposited on the second thin film of the long organic substrate 9. Thereby, a third thin film is formed on the second thin film of the long organic base material 9. The deposition rate by each target is controlled by DC power supplied from the DC power sources 28, 34 to 36, and 40 to the magnetron sputtering electrodes 25, 31 to 33, and 39, respectively.
[0071]
The long organic base material 9 on which the third thin film is formed in the second processing chamber 37 is taken up by the take-up roll 22.
[0072]
Next, the long organic base material 9 is driven by the cooling roll 30 and the winding roll 22 so that the long organic base material 9 travels in the reverse direction at a constant speed.
[0073]
The long organic base material 9 is unwound from the take-up roll 22 and reaches the second processing chamber 37 between the guide rolls 21 and 20. In the second processing chamber 37, the target attached to the magnetron sputtering electrode 39 is sputtered by ions, and the target material is deposited on the third thin film of the long organic substrate 9. As a result, a fourth thin film is formed on the third thin film of the long organic base material 9. Thereafter, the long organic base material 9 on which the fourth thin film is formed by the magnetron sputtering electrode 39 is sent along the cooling roll 30 into the film forming chamber 12. In the film forming chamber 12, the target attached to the magnetron sputtering electrodes 31 to 33 is sputtered by ions, and the target material is deposited on the fourth thin film of the long organic base material 9. Thereby, a fifth thin film is formed on the fourth thin film of the long organic base material 9.
[0074]
After the fifth thin film is formed, the long organic base material is guided by the guide rolls 18 and 17 and reaches the first processing chamber 23 between the guide rolls 17 and 16. The target attached to the magnetron sputter electrode 25 is sputtered by ions in the first processing chamber 23, and the target material is deposited on the fifth thin film of the long organic substrate 9. Thereby, a sixth thin film is formed on the first thin film of the long organic base material 9. The deposition rate by each target is controlled by DC power supplied from the DC power sources 28, 34 to 36, 40 to the magnetron sputtering electrodes 25, 31-33, 39, respectively.
[0075]
As described above, in the second example of the vacuum thin film forming method, the metal layer and the metal oxide layer are simultaneously formed on the long organic base material 9 by the first and second processing chambers 23 and 39 and the film forming chamber 12. It is possible to reduce the time for forming a thin film.
[0076]
In the second example, the case where the long organic base material 9 is driven bidirectionally by the feeding roll 15, the cooling roll 30, and the winding roll 22 may be driven only in one direction.
[0077]
In the second example, the thin film is formed in both the first processing chamber 23 and the second processing chamber 39. However, the thin film may be formed on either one of the first processing chamber 23 and the second processing chamber 39.
[0078]
In the second example, the same atmosphere is formed in the first and second processing chambers 23 and 39, but the thin films may be formed in different atmospheres.
[0079]
In the second example, sputter deposition is performed in the film forming chamber 12 and normal sputter deposition is performed in the first and second processing chambers 23 and 39. However, the first and second processing chambers 23 and 39 are used. In addition, reactive sputter deposition may be performed in at least one of the film formation chambers 12.
[0080]
【Example】
[Example 1]
The case where the base material for flexible printed wiring boards which uses a polyimide film as the elongate organic base material 9 and has a Cr (chromium) layer and a Cu (copper) layer on a polyimide film is demonstrated.
[0081]
Tungsten that is difficult to be sputter-etched was attached to the target of the magnetron sputter electrode 25. A Cr target was attached on the magnetron sputter electrode 31, and a Cu target was attached on the magnetron sputter electrodes 32 and 33, respectively.
[0082]
The vacuum chamber 2 is set to 1.0 × 10 6 by an exhaust system pump (not shown).^-3After exhausting to Pa, nitrogen gas is introduced from the gas introduction system 24 and the pressure of the nitrogen gas in the vicinity of the magnetron sputter electrode 25 is set to 2 × 10 in the first processing chamber 23.^-1Adjusted to Pa. On the other hand, argon gas is introduced from the gas introduction system 29, and the pressure of the argon gas in the film forming chamber 12 is set to 4 × 10.^-1Adjusted to Pa.
[0083]
The nitrogen gas pressure and the argon gas pressure are adjusted by adjusting the flow rate of each gas by the gas introduction systems 24 and 29 and adjusting the exhaust amount by the conductance valves 13 and 14. When the partial pressure was measured, 3 × 10^-FiveIt was Pa and was not a level that had a significant effect on the conductivity of chromium and copper.
[0084]
The magnetron sputter electrode 25 is supplied with a high frequency power of 13.56 MHz (power density is 1.6 W / cm) from a high frequency power source 27.²) And nitrogen plasma was generated by glow discharge.
[0085]
The polyimide film is run at 2 m / min, and after performing plasma treatment with nitrogen plasma in the first treatment chamber 23, a Cr layer having a thickness of 20 nm on the polyimide film 1 by the magnetron sputtering electrode 31 in the film formation chamber 12. Further, a Cu layer having a thickness of 70 nm was formed thereon by magnetron sputtering electrodes 32 and 33.
[0086]
Thereafter, the polyimide film was wound up by a winding roll 22.
In this case, the magnetron sputter electrode 31 has direct current power (power density is 4.5 W / cm²) And DC power (power density is 6.2 W / cm) to each of the magnetron sputter electrodes 32 and 33.²) Was applied.
[0087]
After Cu (copper) was further electroplated on the Cu layer of the sample thus prepared, the thickness of the copper layer on the polyimide film was adjusted to 10 μm in total, and then the adhesion of the metal layer (Cr layer) to the polyimide film Was measured by a 90 ° peel peel test. This sample had an adhesion strength of 1.7 kg / cm and had sufficient adhesion strength for use as a wiring board.
[0088]
[Example 2]
A PET (polyethylene terephthalate) film is used as the long organic base 9, and ITO (indium and tin oxide), Ag (silver), ITO, Ag, ITO, Ag, ITO, and SiO on the PET film.₂The case of forming an optical film having a film composed of a total of eight layers of (silicon dioxide) will be described.
[0089]
Ag targets were attached on the magnetron sputter electrodes 25 and 39. Further, an In target containing 5% Sn was attached on the magnetron sputter electrodes 31 and 32, and a Si target was attached on the magnetron sputter electrode 33.
[0090]
With vacuum pump, vacuum chamber 1 is 1.0 × 10^-3After evacuating to Pa, argon gas is introduced from the gas introduction system 24 and the gas introduction system 38, and the pressure of the argon gas around the magnetron sputtering electrode 25 and the magnetron sputtering electrode 39 is set to 4 × 10.^-1Adjusted to Pa. On the other hand, a mixed gas of argon gas and oxygen gas is introduced from the gas introduction system 29, and the pressure of the mixed gas in the film forming chamber 12 is 4 × 10.^-1Adjusted to Pa. However, the oxygen gas flow rate depends on the ITO or SiO film to be formed.₂The amount of evaporation is monitored, and the flow rate can be controlled to an appropriate value.
[0091]
First, the PET film is unwound from the unwinding roll 15 and is run at 1 m / min while winding the PET film with the winding roll 22 (winding in the forward direction). An ITO layer having a thickness was formed, and then an Ag layer having a thickness of 10 nm was formed by the magnetron sputtering electrode 39. In this case, 2.5 W / cm is applied to the magnetron sputter electrodes 31 and 32.²DC power is applied and 1 W / cm is applied to the magnetron sputter electrode 39.²DC power was applied.
[0092]
Next, the PET film is unwound from the take-up roll 22 and is run at 1 m / min while the PET film is being taken up by the take-out roll 15 (winding in the reverse direction). Then, an ITO layer having a thickness of 60 nm was formed, and an Ag layer having a thickness of 10 nm was formed by the magnetron sputtering electrode 25. In this case, 2.5 W / cm is applied to the magnetron sputter electrodes 31 and 32.²Is applied to the magnetron sputter electrode 25 at 1 W / cm.²DC power was applied.
[0093]
Similarly, while rewinding the PET film in the forward direction, reactive sputtering is performed by the magnetron sputtering electrodes 31 and 32 to form an ITO layer having a thickness of 60 nm, and an Ag layer having a thickness of 10 nm is formed by the magnetron sputtering electrode 39. Was deposited. In this case, 2.5 W / cm is applied to the magnetron sputter electrodes 31 and 32.²DC power is applied and 1 W / cm is applied to the magnetron sputter electrode 39.²DC power was applied. Thereafter, reactive sputtering was performed by the magnetron sputter electrodes 31 and 32 while winding the PET film in the reverse direction to form an ITO layer having a thickness of 60 nm. In this case, 2.5 W / cm is applied to the magnetron sputter electrodes 31 and 32.²DC power was applied.
[0094]
Finally, reactive sputtering is performed by the magnetron sputter electrode 33 while winding the PET film in the forward direction, and a 90 nm thick SiO 2 film is formed.₂Was deposited. In this case, 9 W / cm is applied to the magnetron sputter electrode 33.²DC power was applied.
[0095]
As described above, when the film is formed by the second example of the vacuum thin film forming method of the present invention, the eight-layer film in which the layers that must be formed in different atmospheres as described above are alternately laminated is a PET film. The film can be formed by reciprocating 2.5 times. In contrast, in the vacuum thin film forming method using the vacuum thin film forming apparatus 50 shown in FIG. 2, when the layers that must be formed in different atmospheres are alternately formed, the long organic base material is wound in one direction. Since one layer can be formed every time, it is necessary to reciprocate the long organic base material four times to form all the layers. Thus, according to the second example of the method for forming a vacuum thin film of the present invention, the metal and the metal compound (for example, metal oxide and metal nitride) are wound during one winding of the long organic base material 9. Can be formed at the same time, so that the film forming process time can be greatly shortened.
[0096]
In addition to polyimide films and PET films, long organic substrates include polyester films, polyamide films, polyethersulfone and other polymer films, and metal foil laminates of these polymer films, and metal foils. And those having a partially formed organic polymer film.
[0097]
In the second embodiment, the ITO layer is formed by using the two magnetron sputtering electrodes 31 and 32. However, the ITO layer may be formed by using one of the magnetron sputtering electrodes 31 and 32.
[0098]
In the above embodiment, the case where the magnetron sputtering electrode is used in the film forming chamber 12 has been described. However, an AC or DC sputtering electrode other than the magnetron sputtering electrode may be used.
[0099]
In addition, it is preferable to perform sputter deposition in the film forming chamber 12 from the viewpoint of miniaturization of the apparatus, but other deposition methods such as vacuum deposition may be used instead of sputter deposition.
[Brief description of the drawings]
FIG. 1 is a schematic view showing a configuration example of a vacuum thin film forming apparatus according to the present invention.
FIG. 2 is a schematic view showing one configuration example of a conventional vacuum thin film forming apparatus.
[Explanation of symbols]
9 Long organic substrate
10 Bulkhead
11 Storage room
12 Deposition chamber
13,14 conductance valve
15 Roll out
16-21 Guide roll
22 Winding roll
24, 29, 38 Gas introduction system
25, 31-33, 39 Magnetron sputtering electrode
30 Cooling roll

Claims (8)

A vacuum thin film forming apparatus for forming a thin film on a long substrate,
A vacuum chamber divided into a first chamber and a second chamber;
Conveying provided in the first chamber and transporting the long base material from the first chamber to the first chamber again via the second chamber by continuously feeding and winding the long base material. Means,
A first sputter electrode provided to face the long base material transported by the transport means in the first chamber;
A first processing chamber that surrounds the portion of the long substrate facing the first sputter electrode and the first sputter electrode in the first chamber and has a slit through which the long substrate passes;
First exhaust means for exhausting the first chamber;
First gas introduction means for introducing a first gas into the first processing chamber;
A thin film forming means provided in the second chamber and forming a thin film on the elongated substrate;
A second exhaust means for exhausting the second chamber;
Second gas introduction means for introducing a second gas into the second chamber ;
A second sputter electrode provided so as to face the elongated base material transported by the transport means in the first chamber;
A second processing chamber that surrounds the portion of the long substrate facing the second sputter electrode in the first chamber and the second sputter electrode, and has a slit through which the long substrate passes;
A third gas introducing means for introducing a third gas into the second processing chamber,
The conveying means is
A first roll provided in the first chamber;
A second roll provided in the first chamber;
A third roll provided to face the second chamber,
The long base material continuously fed out from the first roll is guided to the outer peripheral surface of the third roll and continuously wound up by the second roll, or continuously from the second roll. The first roll, the second roll, and the second roll so that the long base material that is fed out is guided to the outer peripheral surface of the third roll and continuously wound by the first roll. The third roll is driven,
The first sputter electrode is disposed so as to face a portion of the long substrate conveyed between the first roll and the third roll,
The vacuum thin film forming apparatus , wherein the second sputter electrode is disposed so as to face a portion of the long substrate transported between the second roll and the third roll . 2. The thin film forming unit includes at least one third sputter electrode arranged to face the long base material transported by the transport unit in the second chamber. Vacuum thin film forming equipment. 3. The vacuum thin film forming apparatus according to claim 2 , wherein the third sputter electrode is a magnetron sputter electrode. The vacuum thin film forming apparatus according to claim 1 , wherein the second sputtering electrode is a magnetron sputtering electrode. The first sputtering electrode, vacuum thin film forming apparatus according to any one of claims 1 to 4, characterized in that a magnetron sputtering electrode. It said conveying means, a vacuum thin-film formation apparatus according to any one of claims 1 to 5, characterized in that it is capable of transferring the elongated substrate bidirectionally. During the transfer of the long base material from the first chamber to the first chamber again via the second chamber in a vacuum chamber divided into a first chamber and a second chamber, a thin film is formed on the long base material. A vacuum thin film forming method for forming
The vacuum chamber is
A sputter electrode provided to face the long base material conveyed in the first chamber;
A portion of the long substrate facing the sputter electrode transported in the first chamber and a processing chamber surrounding the sputter electrode and having a slit through which the long substrate passes;
The vacuum thin film forming method includes:
Exhausting the first chamber and the second chamber;
Introducing a first gas into the processing chamber after the exhaust;
Introducing a second gas into the second chamber after the exhaust;
Forming a first thin film with the sputter electrode on the elongated substrate being transported in the processing chamber;
And a step of forming a second thin film on the first thin film of the long base material transported in the second chamber. In the vacuum chamber divided into the first chamber and the second chamber, the long base material is transferred to the first chamber from the first chamber to the first chamber again via the second chamber. A vacuum thin film forming method for forming a thin film,
The vacuum chamber is
A sputter electrode provided to face the long base material conveyed in the first chamber;
A portion of the long substrate facing the sputter electrode transported in the first chamber and a processing chamber surrounding the sputter electrode and having a slit through which the long substrate passes;
The vacuum thin film forming method includes:
Exhausting the first chamber and the second chamber;
Introducing a first gas into the processing chamber after the exhaust;
Introducing a second gas into the second chamber after the exhaust;
Forming a first thin film on the elongated base material being transported in the second chamber;
Characterized by comprising a step of forming a second thin film by the sputtering electrode on the first film of the long substrate through the second chamber is carried in the processing chamber Vacuum thin film forming method.

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