JP5428175B2 - Vacuum film forming apparatus and vacuum film forming method - Google Patents

Description

The present invention relates to a vacuum deposition apparatus and the manufacturing how the conductive film for the production of continuously formed conductivity film a conductive thin film on the plastic film under a vacuum atmosphere.
In particular, a manufacturing apparatus for continuously forming a conductive thin film in a vacuum on a plastic film substrate, including equipment such as a contact resistance measuring instrument, and a film forming flow using the manufacturing apparatus The present invention relates to a manufacturing method for manufacturing a thin film having uniform characteristics in a direction.

A conventional vacuum film forming apparatus for forming a conductive thin film will be described.
FIG. 1 is a schematic view of a general on-line conductive thin film surface resistance measuring instrument.
In FIG. 1, the contact resistance measuring instrument uses a pair of film transport rolls 11a and 11b around which a plastic film 12 is wound as an electrode, and the surface of the conductive thin film formed on the plastic film 12 is the film transport roll 11a. In this state, the resistance value of the conductive thin film between the film transport rolls 11a and 11b is directly measured.

FIG. 2 is a schematic view of a conventional eddy current type non-contact type conductive thin film surface resistance measuring device.
The plastic film 22 on which the conductive thin film is formed is between the magnetic heads 21a and 21b, and an eddy current in a direction to cancel the magnetic field change on the plastic film 22 by applying an alternating magnetic field between the magnetic heads 21a and 21b. 24 occurs. Since there is a correlation between the eddy current and the resistance value of the conductive thin film, the surface resistance value of the conductive thin film can be derived by measuring the energy consumed by the eddy current. Moreover, the resistance value distribution in the width direction can be measured by installing a plurality of magnetic heads in the width direction of the plastic film.

Prior art patent documents 1 and 2 using an eddy current type resistance measuring device in a roll-to-roll type vacuum film forming apparatus are shown below.
JP 2001-3167 A Patent No. 3922109

In the case of an ITO (indium tin oxide) thin film, which is a typical conductive thin film, there is a correlation as shown in FIG. 3 between the oxygen partial pressure and the surface resistance value during the ITO film formation.
Usually, the oxygen flow rate is set by a mass flow controller so that the surface resistance value becomes the lowest resistance value, and the resistance value is guaranteed by an on-line type conductive thin film surface resistance measuring device shown in FIGS. In this case, as shown in FIG. 4, when a conductive thin film having a surface resistance value of about 500Ω / □ is formed to about 1000 m, this method can guarantee.
However, when the film formation length is 1000 m or more, the gas partial pressure in the vacuum chamber fluctuates from lot to lot due to film type, history, seasonal fluctuations, etc., and deviates from the optimum resistance value condition. Will increase.
In addition, since there is a tendency that the oxygen flow rate is greater or less than the appropriate amount as shown in FIG. 3, in an apparatus having a function only for monitoring the surface resistance of the conductive thin film online, the oxygen flow rate is set to the appropriate amount. Could not be controlled. Further, it has not been possible to cope with a change in the crystallization temperature of the ITO film due to an increase or decrease in the oxygen partial pressure.
If the number of film forming sources for forming the conductive thin film is large, the actual film forming time when the same 1000 m is formed is shortened, but the transport speed of the plastic film is increased, and the plastic film is removed from the film. Since the effect of outgassing becomes significant, the resistance value of the long conductive thin film is similarly hindered.

When trying to introduce a contact-type on-line conductive thin film surface resistance measuring instrument as shown in FIG. 1 into an existing vacuum apparatus, two film transport rolls that touch the conductive thin film forming surface side of the plastic film are in close proximity. In order to reduce the influence of the contact resistance and the necessity, there has been a problem that there are many limitations such as a large winding angle of the plastic film around the roll.
On the other hand, when considering mass production with a vacuum film forming device, indirect time such as cleaning, exhausting, and leaking of the film forming device becomes a problem in terms of cost. It was necessary to reduce the ratio of the indirect time to the film formation time.

The present invention has been made to solve the above-described problems of the prior art, and can ensure the control of the resistance value distribution of a conductive thin film that can be loaded with a long base film at a time and continuously formed. and to provide a vacuum deposition apparatus and a vacuum deposition how it continuously formed a conductive thin film of uniform film quality it is possible to.

In order to achieve the above object, the invention of claim 1 is characterized in that a base film is wound around the film forming drum, the base film is unwound around the film forming drum, and the base film is wound up from the film forming drum. Unwinding means, winding means for winding the base film from the film forming drum, and winding the base film to the film forming drum; and the unwinding means unwinds the base film and winds the base film. When the winding means winds up the base film, a conductive thin film is formed on the base film wound around the film forming drum, and the winding means unwinds the base film and winds the base film. A film forming means for forming a conductive thin film on the conductive thin film of the base film wound around the film forming drum when the take-out means is winding the base film; and the film forming means When A conductive film formed by the film forming means when the unwinding means unwinds the base film and the winding means winds the base film. Non-contact type first resistance measuring means for measuring the surface resistance value of the thin film, and provided between the film forming means and the unwinding means, the unwinding means unwinds the base film and the winding Non-contact type second resistance measuring means for measuring the surface resistance value of the conductive thin film formed by the film forming means when the take-out means is winding the base film, the film forming means and the winding A light measuring means for measuring the light transmittance and / or light reflectance of the base film after film formation, and the first resistance measuring means or the second resistance measurement. The surface resistance value measured by the means and the light measurement Control means for adjusting film forming conditions of the film forming means so that film characteristics of the conductive thin film are uniform based on the light transmittance and / or light reflectance measured by the means, The control means sets the oxygen flow rate in the film forming means so that the surface resistance value becomes the lowest value, and when the surface resistance value increases, the light transmittance is lower than an appropriate value. And / or if the light reflectance is higher than the proper value, increase the oxygen flow rate, and if the light transmittance is higher than the proper value and / or if the light reflectivity is lower than the proper value, the oxygen flow rate. It is characterized by reducing.

According to a second aspect of the present invention, in the vacuum film forming apparatus according to the first aspect, a sputtering method is used for the film forming unit, and the film forming unit performs plasma discharge when the conductive thin film is formed by the sputtering method. Gas partial pressure measuring means for quantitatively analyzing and measuring the gas partial pressure for each gas type used in the gas, wherein the gas type contains H ₂ O, and the control means is measured by the gas partial pressure measuring means The film forming condition of the film forming means is adjusted so as to keep the partial pressure of the H ₂ O gas constant.
According to a third aspect of the present invention, in the vacuum film forming apparatus according to the first or second aspect , a sputtering method is used for the film forming means, and the film forming means is provided at a plurality of locations in the width direction of the base film. And a plurality of discharge confirmation means for monitoring plasma discharge when the conductive thin film is formed by the sputtering method, and the control means is based on a monitoring result of emission intensity of oxygen ions confirmed by the discharge confirmation means. And the film forming conditions of the film forming means are adjusted.

According to a fourth aspect of the present invention, the unwinding means unwinds the base film on the film forming drum and the winding means is wound around the film forming drum when the base film is wound from the film forming drum. A conductive thin film is formed on the base film, the winding means unwinds the base film on the film forming drum, and the unwinding means winds the base film from the film forming drum. A film forming step of further forming a conductive thin film on the conductive thin film of the base film sometimes wound on the film forming drum, and the unwinding means winds the base film around the film forming drum. A non-contact first resistance measuring step of measuring a surface resistance value of the conductive thin film formed in the film forming step when the take-up means is winding the base film, and the winding Means for forming the film deposition drum Non-contact type second resistance for measuring the surface resistance value of the conductive thin film formed in the film forming step when the base film is unwound and the unwinding means winds the base film. Measured in a measurement step, a light measurement step of continuously measuring light transmittance and / or light reflectance of the base film after film formation, and the first resistance measurement step or the second resistance measurement step. Based on the surface resistance value and the light transmittance and / or light reflectance measured in the light measurement step, the film formation conditions in the film formation step are adjusted so that the film characteristics of the conductive thin film are uniform. A control step, wherein in the control step, an oxygen flow rate in the film forming means is set so that the surface resistance value becomes the lowest value, and when the surface resistance value increases, the light transmission And / or if the rate is lower than the appropriate value Increases the oxygen flow rate when the light reflectivity is higher than the proper value, and decreases the oxygen flow rate when the light transmittance is higher than the proper value and / or when the light reflectivity is lower than the proper value. It is characterized by that.

According to a fifth aspect of the present invention, in the vacuum film formation method according to the fourth aspect , a sputtering method is used for the film formation step, and the film formation step includes plasma discharge when the conductive thin film is formed by the sputtering method. A gas partial pressure measurement step for quantitatively analyzing and measuring a gas partial pressure for each gas type used in the measurement, wherein the gas type includes H ₂ O, and the control step is measured in the gas partial pressure measurement step. The film-forming conditions of the film-forming process are adjusted so as to keep the partial pressure of the H ₂ O gas constant.
A sixth aspect of the present invention is the vacuum film formation method according to the fifth aspect , wherein a sputtering method is used for the film formation step, and the film formation step is performed at the plurality of positions in the width direction of the base film. A discharge confirmation step for monitoring plasma discharge when the conductive thin film is formed by the control step, in the control step, the measured value measured in the gas partial pressure measurement step and the oxygen ion confirmed in the discharge confirmation step The film forming condition of the film forming process is adjusted based on the monitor result of the emission intensity.

According to the vacuum deposition apparatus and a vacuum deposition how the present invention can be put base long film at a time, and with the resistance distribution of the conductive thin films are continuously formed can be ensured by controlling A conductive thin film having a uniform film quality can be continuously formed. Furthermore, by configuring the base film so that the running of the base film can be reversed, a plurality of conductive thin films of two or more layers can be formed on the base film.

(Embodiment 1)
Embodiments of the present invention will be described below with reference to the drawings.
FIG. 5 is a schematic configuration diagram showing an example of a roll-to-roll type vacuum film forming apparatus according to an embodiment of the present invention.
As shown in FIG. 5, the roll-to-roll type vacuum film forming apparatus 50 of this example has an unwinding / winding chamber 51 and film forming chambers 52a and 52b, and a vacuum pump and a pressure regulating valve, not shown, respectively. Thus, the unwinding / winding chamber 51 and the film forming chambers 52a and 52b can be adjusted to a desired pressure, respectively.
In the unwinding / winding chamber 51, unwinding means 53 for unwinding the base film 57a from the base film roll 57 in which a strip-shaped base film 57a having a predetermined width is wound in a roll shape, and conductive A winding means 54 is provided for winding the conductive film 58 formed with a thin film into a roll.
The winding means 54 includes a winding drive shaft 54a composed of a servo motor or the like that can control the torque amount and the winding conveyance speed independently. The unwinding means 53 includes an unwinding driven shaft 53a with a brake mechanism that enables unwinding of the base film 57a while applying a certain tension.

The unwinding / winding chamber 51 is rotatably provided with a film forming drum 52 disposed so that the circumferential surface faces both the unwinding / winding chamber 51 and the film forming chambers 52a and 52b. The film forming drum 52 is configured such that the base film 57a unwound from the base film roll 57 is guided to the film forming drum 52 through a plurality of idle rolls 59a. The film formation drum 52 includes a temperature adjustment mechanism (not shown) for adjusting the temperature of the base film 57a during film formation. As the temperature control mechanism, cold water means in which cooling water is circulated, refrigerant that is antifreeze, or the like can be used, but is not limited thereto.
In the film forming chambers 52a and 52b, film forming means 55a and 55b for successively forming two layers of conductive thin films are provided on one surface of the base film 57a wound around the film forming drum 52, respectively. Has been. A sputtering method is used for the film forming means 55a and 55b. Further, the conductive film 58 after the conductive thin film is formed in two layers is configured to be guided to the winding drive shaft 54a of the winding means 54 through a plurality of idle rolls 59b.

Between the film forming means 55b and the winding means 54 in the unwinding / winding chamber 51, there is provided an eddy current type resistance measuring means 56 for continuously measuring the surface resistance value of the conductive film 58 in a non-contact manner. It has been.
The resistance measuring unit 56 may be at least between the film forming unit 55b as the film forming source and the winding unit 54, and may be attached at any position as long as there is no metal roll and metal jig in the vicinity. .
Further, a resistance measuring means 56a indicated by a broken line is installed between the unwinding means 53 and the film forming means 55a that is the film forming source, and the traveling of the base film 57a is reversed so that a plurality of conductive thin films of two or more layers are formed. It is also possible to correspond so that it can be formed.

Further, between the film forming means 55b and the winding means 54 in the unwinding / winding chamber 51, there is a light measuring means 60 for continuously measuring the light transmittance and / or light reflectance of the conductive film 64. Is provided.
As shown in FIG. 6, the light measuring means 60 is disposed so as to face one surface of the conductive film 64 (the surface on which the conductive thin film is formed), and faces the one surface of the conductive film 64. a light emitting and receiving element 61 for receiving one light reflected by the surface of the conductive film 64 irradiates the light, it is arranged opposite to the other surface of the conductive film 64, light transmitted through the conductive film 64 And a light receiving element 62 for receiving the light.
Here, information on light received by the light emitting / receiving element 61 and the light receiving element 62 is obtained by detecting light of a specific wavelength using a bandpass filter or monitoring light in a certain wavelength region. Is done.

As shown in FIG. 8, the film forming means 55a and 55b by the sputtering method includes a target 81 such as ITO and a raw material introduction pipe 82 such as oxygen, steam (H ₂ O), argon, and nitrogen. . Further, the film forming units 55a and 55b include a gas partial pressure measuring unit 83, a discharge confirmation unit 84, and a monitor-equipped control unit 85 (corresponding to the control unit in FIG. 5).
The gas partial pressure measuring means 83 quantitatively analyzes and measures the gas partial pressure for each of the gas types used for plasma discharge when forming a conductive thin film by sputtering. The discharge confirmation means 84 monitors plasma discharge when forming a conductive thin film by sputtering.

The control means 65 shown in FIG. 5 has uniform film characteristics of the conductive thin film based on the surface resistance value measured by the resistance measurement means 56 and the light transmittance and / or light reflectance measured by the light measurement means 60. Thus, the film forming conditions of the film forming means 55a and 55b are adjusted.
Further, the control means 65 adjusts the film formation conditions of the film formation means 55a and 55b based on one or both of the measured value measured by the gas partial pressure measurement means 83 and the plasma discharge result confirmed by the discharge confirmation means 84. It has a function to do.

Next, the manufacturing method of the electroconductive film using the vacuum film-forming apparatus 50 is demonstrated.
First, the base film roll 57 mounted on the unwind driven shaft 53a is unwound and transferred to the film forming means 55a and 55b along the peripheral surface of the film forming drum 52 as a sheet-like base film 57a. Thereafter, the base film 57a is transferred from the unwinding / winding chamber 51 to the film forming chambers 52a and 52b while being wound around the film forming drum 52 set at an arbitrary temperature. Then, the sheet-like base film 57a formed by the film forming means 55a and 55b in the film forming chambers 52a and 52b is wound as a conductive film 58 on the winding drive shaft 54a through the idle roll 59b. . During this time, the sheet-like base film 57a is maintained at a constant tension by a tension roll (not shown).

While the sheet-like base film 57a is being transferred, the film formation chambers 52a and 52b are decompressed by a vacuum pump (not shown) and are kept in a predetermined vacuum state. Thereafter, a raw material gas for film formation is introduced from the raw material introduction pipe 82 into the film formation chambers 52a and 52b. Subsequently, for example, an oxygen reaction gas such as oxygen or steam (H ₂ O) as a raw material gas is mixed in an argon gas as a discharge gas to cause plasma discharge, and a target such as ITO by the generated mixed gas A conductive thin film such as ITO is continuously formed in two layers on one surface of the base film 57a by sputtering. Then, the base film 57 a on which the conductive thin film is formed is wound on the roll as the conductive film 58 on the winding drive shaft 54 a of the winding means 54.
In this case, the diameter of the base film roll 57 used for the production of the conductive film or the diameter of the roll of the conductive film 58 wound around the winding drive shaft 54a of the winding means 54 is 600 mmφ to 700 mmφ. It is as follows.

On the other hand, the surface resistance value of the conductive film 58 is continuously measured by the resistance measuring means 56, and the surface resistance value is taken into the control means 65 as information for adjusting the film forming conditions of the film forming means 55a and 55b. Further, the light transmittance and / or light reflectance of the conductive film 58 is continuously measured by the light beam measuring means 60, and the measured value is the control means 65 as information for adjusting the film forming conditions of the film forming means 55a and 55b. Is taken in.
Further, the measured value measured by the gas partial pressure measuring means 83 and the result of the plasma discharge confirmed by the discharge confirmation means 84 are taken into the control means 65 as information for adjusting the film forming conditions of the film forming means 55a and 55b. .

FIG. 7 is a graph showing a general relationship between the oxygen partial pressure and the light transmittance in the present embodiment.
In FIG. 7, when the amount of oxygen is small from an appropriate amount of oxygen, the absorption of the thin film is large and the transmittance is decreased. On the other hand, when the amount of oxygen is large, the transmittance is increased. Conversely, when the light reflectance is monitored, the reflectance is high when the amount of oxygen is small, and the reflectance tends to decrease as the amount of oxygen increases. Therefore, in the resistance measuring means 56, when the surface resistance value increases, the oxygen partial pressure can be judged to be insufficient by combining with the monitor result of the light transmittance and / or the light reflectance measured by the light measuring means 60, The measurement information is fed back to the control means 65 to optimize the film forming conditions of the film forming means 55a and 55b.
Further, by monitoring the gas partial pressure measured by the gas partial pressure measuring means 83 and the emission intensity of the plasma discharge measured by the discharge confirmation means 84, the surface resistance value data, partial pressure, and plasma emission intensity change are monitored. Thus, the film forming conditions of the film forming means 55a and 55b are adjusted automatically (or manually).

FIG. 9 is a graph showing the relationship between the oxygen partial pressure during film formation and the crystallization temperature of ITO in the present embodiment.
In FIG. 9, when the H ₂ O partial pressure is low, it has a characteristic of being easily crystallized by annealing in the atmosphere, whereas when the H ₂ O partial pressure is high, there is a tendency to maintain amorphous. Therefore, the introduction of H 2 _O, is increased or decreased, at all times by controlling to maintain of H _{2 O} partial pressure constant, it is possible also to form a uniform thin film in crystallinity.

When the light emission of plasma discharge is monitored by the discharge confirmation means 84, for example, the oxygen partial pressure can be quantified by monitoring the light emission intensity of oxygen ions. At this time, by monitoring a plurality of locations in the width direction of the sheet-like base film 57a with a plurality of discharge confirmation means 84, the distribution of the oxygen partial pressure in the film width direction can be confirmed, and the oxygen gas inlet is provided. By dividing, the distribution of the oxygen partial pressure in the film width direction can be adjusted.
If the resistance value and oxygen partial pressure of the conductive thin film can be quantified, it is possible to reset the resistance value to the optimum value from the relationship shown in FIG.

The method for forming the conductive thin film is not particularly limited, and examples thereof include a sputtering method and an ion plating method, but the sputtering method is widely used from the viewpoint of reproducibility and area enlargement.
In order to form a plurality of thin films in-line or to improve productivity, a plurality of film forming sources may be provided.

The plastic base film used in the present invention is not particularly limited as long as it has sufficient strength in the film forming step and the subsequent step. For example, polyethylene terephthalate film, polybutylene terephthalate film, polyethylene naphthalate film, polycarbonate film , Polyethersulfone film, polysulfone film, polyarylate film, cyclic polyolefin film, polyimide and the like. The thickness of the base film is about 10 to 200 μm in consideration of the thinning of the member and the flexibility of the base material. Various known additives and stabilizers such as an antistatic agent, an anti-ultraviolet agent, a plasticizer, a lubricant, and an oligomer prevention layer may be used on the surface of these base films. In order to improve adhesion, corona treatment, low temperature plasma treatment, ion bombardment treatment, chemical treatment or the like may be performed as pretreatment.
Further, depending on the required specifications of the device to be applied, at least one surface may be subjected to a treatment such as a hard coat treatment or an antifouling / water repellent treatment.

  According to this embodiment as described above, a conductive film is continuously formed by forming a conductive thin film on a base film using a roll-to-roll vacuum film forming apparatus and a vacuum film forming method. Can be produced in large quantities. Then, the diameter of the base film roll mounted on the unwinding driven shaft or the diameter of the conductive film wound in a roll shape on the winding drive shaft is 600 mmφ to 700 mmφ, so that the 6-inch core has a diameter of 200 μm. With a base film with a thickness of 1000 m or more and a base film with a thickness of 100 μm, a conductive film with a thickness of 2500 m or more can be mounted or wound, and the ratio of indirect time to the operation of the vacuum film forming apparatus can be shortened, improving productivity. To do.

In the present embodiment, the non-contact type on-line conductive thin film surface resistance measuring means is used as the means for measuring the surface resistance value, so that the vacuum film forming method of the present invention is applied to the existing apparatus as a base film. The film can be introduced without considering the front and back surfaces of the film, the winding angle of the film with respect to the base film transport roll, and the like.
Further, in the present embodiment, the light transmittance and / or the light beam of the film after film formation on the film path between the film forming means which is the film forming source for forming the conductive thin film and the winding means. By installing light measurement means that can measure the reflectance, and monitoring the light transmittance, light reflectance, and the refractive index of the thin film calculated from them, the film quality uniformity in the film running direction during film formation can be improved. If the film quality can be confirmed and the film quality fluctuates, the film forming conditions can be readjusted based on this numerical value. Moreover, it is also possible to confirm the uniformity in the width direction by installing a plurality of resistance measuring means and light beam measuring means in the width direction of the film.

Further, in the present embodiment, a film partial pressure measurement means for quantitatively analyzing and measuring the partial gas pressure for each gas type in the vicinity of the film forming source for forming the conductive thin film is installed, so that the film is formed at any time. The state of the atmosphere can be confirmed, and when the state of the film formation atmosphere fluctuates, the film formation conditions can be readjusted based on this numerical value.
In this embodiment, the discharge state can be confirmed at any time by installing a discharge confirmation means for monitoring the plasma emission spectrum in the vicinity of the film forming source for forming the conductive thin film. When fluctuates, it becomes possible to readjust the discharge state based on this numerical value.
Further, in the present embodiment, a film forming method in which one or more of the non-contact type on-line conductive thin film surface resistance measuring means and the above-described light measuring means, gas partial pressure measuring means, and discharge confirming means are installed is adopted. Therefore, even when the film thickness exceeds 1000 m, it is possible to form a conductive thin film having a uniform film quality by feedback control of the film forming conditions.

  In addition, the conductive film made of plastic formed with the conductive thin film obtained by the vacuum film forming apparatus of the present invention is an electrode for liquid crystal display, electronic paper, touch panel, etc. as a functional film substrate having functions such as conductive performance. Is preferably used.

It is the schematic which shows an example of the measurement principle of the conventional online type electroconductive thin film surface resistance measuring device. It is the schematic which shows an example of the measurement principle of a non-contact-type electroconductive thin film surface resistance measuring device. It is a graph which shows the relationship between the oxygen partial pressure at the time of ITO film-forming, and a surface resistance value. It is a graph which shows the relationship between the film-forming length of a roll-to-roll, and the surface resistance value of the manufactured electroconductive thin film. It is a schematic block diagram which shows an example of the roll-to-roll system vacuum film-forming apparatus concerning embodiment of this invention. It is a schematic block diagram which shows an example of the light ray measurement means in this Embodiment. It is a graph which shows the relationship between the oxygen partial pressure at the time of conductive thin film film-forming in this Embodiment, and the transmittance | permeability of a conductive thin film. It is a schematic block diagram of the gas partial pressure measurement means and discharge confirmation means which were installed in the vicinity of the sputtering cathode in this Embodiment. Partial pressure of H _{2 O} at ITO thin film formation in the present embodiment and the relationship between the crystallization temperature is a graph showing.

Explanation of symbols

  50: Vacuum film forming apparatus, 51: Unwinding / winding chamber, 52: Film forming drum, 52a, 52b ... Film forming chamber, 53: Unwinding means, 53a: Unwinding driven shaft, 54 .... Winding means, 54a ... Winding drive shaft, 55a, 55b ... Film forming means, 56 ... Resistance measuring means, 57 ... Base film roll, 57a ... Base film, 58 ... Conductivity Film: 60 ... Light measuring means, 61 ... Light emitting / receiving element, 62 ... Light receiving element, 65 ... Control means, 81 ... Target, 82 ... Raw gas introduction pipe, 83 ... Gas partial pressure measuring means , 84... Discharge confirmation means, 85... Controller with monitor.

Claims (6)

A film-forming drum around which a base film is wound;
Unwinding means for unwinding the substrate film on the film-forming drum and winding the substrate film from the film-forming drum;
Winding means for winding the base film from the film forming drum, and winding the base film to the film forming drum;
When the unwinding means unwinds the base film and the winding means winds up the base film, a conductive thin film is formed on the base film wound around the film forming drum, When the winding means unwinds the base film, and the unwinding means winds the base film, the conductive film further conducts on the conductive thin film of the base film wound on the film forming drum. Film forming means for forming a conductive thin film;
It is provided between the film forming means and the winding means, and is formed by the film forming means when the unwinding means unwinds the base film and the winding means winds the base film. Non-contact type first resistance measuring means for measuring the surface resistance value of the conductive thin film formed;
It is provided between the film forming means and the unwinding means, and is formed by the film forming means when the winding means unwinds the base film and the unwinding means winds the base film. Non-contact type second resistance measuring means for measuring the surface resistance value of the conductive thin film formed;
A light ray measuring means provided between the film forming means and the winding means, and continuously measuring the light transmittance and / or light reflectance of the base film after the film formation;
Said surface resistance value measured by the first resistance measuring means or said second resistance measurement hand stage, the conductive thin film on the basis of the said light transmittance measured by the light measuring means and / or light reflectance Control means for adjusting film forming conditions of the film forming means so that film characteristics are uniform ,
The control means sets the oxygen flow rate in the film forming means so that the surface resistance value becomes the lowest value, and when the surface resistance value increases, the light transmittance is lower than an appropriate value. And / or if the light reflectance is higher than the proper value, increase the oxygen flow rate, and if the light transmittance is higher than the proper value and / or if the light reflectivity is lower than the proper value, the oxygen flow rate. Decrease,
The vacuum film-forming apparatus characterized by the above-mentioned. A sputtering method is used for the film forming means, and the film forming means is a gas for quantitatively analyzing and measuring a gas partial pressure for each gas type used for plasma discharge when forming the conductive thin film by the sputtering method. With partial pressure measuring means,
The gas species includes H ₂ O;
The control means is configured to adjust film forming conditions of the film forming means so as to keep a constant partial pressure of the H ₂ O gas measured by the gas partial pressure measuring means. The vacuum film-forming apparatus according to claim 1. Sputtering is used for the film forming means, the film forming means, a plurality of monitoring a plasma discharge when the provided in the width direction of the plurality of locations of the base film, forming the conductive thin film by the sputtering method The discharge confirmation means
The control means according to claim 1, characterized in that it is configured to adjust the film formation conditions of the previous KiNarumaku unit based on the discharge check means monitoring result of the emission intensity of confirmed oxygen ions Or the vacuum film-forming apparatus of 2 . When the unwinding means unwinds the base film on the film forming drum and the winding means winds the base film from the film forming drum, the electroconductive material is wound on the base film wound around the film forming drum. A thin film is formed, and the winding means unwinds the base film on the film forming drum, and the unwinding means winds the base film from the film forming drum. A film forming step of further forming a conductive thin film on the conductive thin film of the substrate film applied;
The surface resistance value of the conductive thin film formed in the film forming step when the unwinding means unwinds the base film on the film forming drum and the winding means winds the base film. A non-contact first resistance measuring step to be measured;
The surface resistance value of the conductive thin film formed in the film forming step when the winding means unwinds the base film on the film forming drum and the unwinding means winds the base film. A non-contact second resistance measuring step to be measured;
A light measuring step of continuously measuring the light transmittance and / or light reflectance of the base film after film formation;
Film characteristics of the conductive thin film based on the a surface resistance value measured by the first resistance measuring step or the second resistor measurement step, the light transmittance and / or light reflectance measured by the light measuring step And a control step of adjusting the film formation conditions in the film formation step so that is uniform ,
In the control step, the oxygen flow rate in the film forming means is set so that the surface resistance value becomes the lowest value, and when the surface resistance value increases, the light transmittance is lower than an appropriate value. And / or if the light reflectance is higher than the proper value, increase the oxygen flow rate, and if the light transmittance is higher than the proper value and / or if the light reflectivity is lower than the proper value, the oxygen flow rate. Decrease,
The vacuum film-forming method characterized by the above-mentioned. A sputtering method is used for the film formation step, and the film formation step is a gas for quantitatively analyzing and measuring a gas partial pressure for each gas type used for plasma discharge when forming the conductive thin film by the sputtering method. With a partial pressure measurement process,
The gas species includes H ₂ O;
In the control step, the film formation conditions of the film formation step are adjusted so as to keep the partial pressure of the H ₂ O gas measured in the gas partial pressure measurement step constant. The vacuum film-forming method according to claim 4 . A sputtering method is used for the film formation step, and the film formation step includes a discharge confirmation step for monitoring plasma discharge when the conductive thin film is formed by the sputtering method at a plurality of locations in the width direction of the base film. With
In the control step, the film formation conditions in the film formation step are adjusted based on the measurement value measured in the gas partial pressure measurement step and the monitor result of the emission intensity of oxygen ions confirmed in the discharge confirmation step. 6. The vacuum film forming method according to claim 5 , wherein the vacuum film forming method is configured.

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